Holger Vogt
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2b444a3423
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remove unused parameters VDMOS_VBS/VBD and VDMOS_CAPBD/BS/GS/GD/GB
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2018-05-04 20:34:51 +02:00 |
Holger Vogt
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33a68b7321
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return only half of the capacitance cgs and cgd
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2018-05-04 20:34:50 +02:00 |
Holger Vogt
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8f1b63c273
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update of status
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2018-05-04 20:34:49 +02:00 |
Holger Vogt
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d23ef75059
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example with weak inversion comparison
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2018-05-04 20:34:48 +02:00 |
Holger Vogt
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4b78c0bc93
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subthres for same example files added
(not yet calibrated with LTSPICE subthres parameter)
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2018-05-04 20:34:48 +02:00 |
Holger Vogt
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62297b2450
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add weak inversion current capability
calibration of parameter subthres with LTSPICE is still missing.
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2018-05-04 20:34:47 +02:00 |
rlar
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013d70681f
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drop vdmos-1.el
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2018-05-04 20:34:46 +02:00 |
rlar
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ce2e704f56
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up, where to ? fixme, there are more ...
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2018-05-04 20:34:45 +02:00 |
rlar
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ede0fb1caa
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cleanup
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2018-05-04 20:34:44 +02:00 |
Holger Vogt
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eb552858e4
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update of status
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2018-05-04 20:34:43 +02:00 |
Holger Vogt
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4a3c707036
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add parallel resistor rds (between outer drain and source nodes, parallel to bulk diode)
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2018-05-04 20:34:42 +02:00 |
Holger Vogt
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b7c6145f5e
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rename the device multiplier m to mu, not to mix it up with the Body diode grading coefficient m
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2018-05-04 20:34:41 +02:00 |
Holger Vogt
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7d2daf2025
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make nodes 3 and 4 the same
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2018-05-04 20:34:40 +02:00 |
Holger Vogt
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c5f47d3c1b
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Error message and exit if a vdmos device instance
has different source and bulk node (have to be the same).
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2018-05-04 20:34:40 +02:00 |
Holger Vogt
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b13675ea44
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remove unused code to calculate bulk-source and bulk-drain capacitors has been replaced already by capacitor from parallel bulk diode
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2018-05-04 20:34:39 +02:00 |
Holger Vogt
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5f3957ba6f
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update the examples for final vdmos model version
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2018-05-04 20:34:38 +02:00 |
Holger Vogt
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e706098725
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update to README.vdmos, actual status
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2018-05-04 20:34:37 +02:00 |
Holger Vogt
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f9b66af074
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add the mtriode parameter scale the triode region independently from saturation current
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2018-05-04 20:34:36 +02:00 |
Holger Vogt
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3b38624233
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examples for mtriode parameter
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2018-05-04 20:34:35 +02:00 |
Holger Vogt
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40fe11db07
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Body diode grading coefficient is m, not mj
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2018-05-04 20:34:34 +02:00 |
Holger Vogt
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c38877a00c
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example input files for vdmos
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2018-05-04 20:34:33 +02:00 |
Holger Vogt
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2f719f7401
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function 'inp_vdmos_model' to process vdmos model lines towards ngspice compatibility
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2018-05-04 20:34:32 +02:00 |
Holger Vogt
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f3478d7f13
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re-format code
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2018-05-04 20:34:31 +02:00 |
Holger Vogt
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9d00a9e28d
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re-format code (whitespace only)
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2018-05-04 20:34:31 +02:00 |
Holger Vogt
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45f52c859b
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enable breakdown capability of parallel bulk diode
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2018-05-04 20:34:30 +02:00 |
Holger Vogt
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2bf70fa259
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add matrix entries for bulk diode
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2018-05-04 20:34:29 +02:00 |
Holger Vogt
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28d393950d
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update status
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2018-05-04 20:34:28 +02:00 |
Holger Vogt
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bfec119e5b
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Use better name for some parameters, cosmetics
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2018-05-04 20:34:27 +02:00 |
Holger Vogt
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4ac7a641ec
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diode model for bulk diode added code taken from dio.c etc. capacitance calculation for vdmos bulk cap removed, is now completely with the diode. An internal node added for series diode resistance RB
matrix entries not yet done!
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2018-05-04 20:34:26 +02:00 |
Holger Vogt
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1ce7fef519
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missing model parameters added
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2018-05-04 20:34:25 +02:00 |
Holger Vogt
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a4dc84ae35
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missing model parameters added
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2018-05-04 20:34:24 +02:00 |
Holger Vogt
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0dc0aa06c4
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re-introdeuce parameter phi Resulting temperature dependency of vto still not available
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2018-05-04 20:34:24 +02:00 |
Holger Vogt
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070b448420
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A short description of the contants of this branch
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2018-05-04 20:34:23 +02:00 |
Holger Vogt
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5b8c8072f3
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mobility and substrate related parameters and equations removed
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2018-05-04 20:34:22 +02:00 |
Holger Vogt
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9df45731e9
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depl cap calculation removed
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2018-05-04 20:34:21 +02:00 |
Holger Vogt
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0a213bea1a
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more on removing the sidewall capacitance
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2018-05-04 20:34:20 +02:00 |
Holger Vogt
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ef547eb8ff
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sidewall capacitance calculation removed
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2018-05-04 20:34:19 +02:00 |
Holger Vogt
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7df59a750e
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useful parameter declarations moved to stay
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2018-05-04 20:34:18 +02:00 |
Holger Vogt
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0ebb7348ca
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remove drain and source resistance contributions
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2018-05-04 20:34:18 +02:00 |
Holger Vogt
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84005efe8b
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lateral diffusion and overlap capacitance removed
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2018-05-04 20:34:17 +02:00 |
Holger Vogt
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e0ddc38519
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default transconductance parameter kp set to 1
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2018-05-04 20:34:16 +02:00 |
Holger Vogt
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e9e621de07
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remove effective channel length, replace by l
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2018-05-04 20:34:15 +02:00 |
Holger Vogt
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47ef2bfaff
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remove unused parameters VDMOS_MOD_VTO
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2018-05-04 20:34:14 +02:00 |
Holger Vogt
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d1497d8270
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rename parameter "pb" --> "vj"
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2018-05-04 20:34:13 +02:00 |
Holger Vogt
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9c1b403f79
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remove Gate.*OverlapCap
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2018-05-04 20:34:12 +02:00 |
Holger Vogt
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dee9dc370f
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default m, W, L = 1
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2018-05-04 20:34:11 +02:00 |
Holger Vogt
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1aa3196ed9
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another re-formatting for better readability (whitespace only)
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2018-05-04 20:34:10 +02:00 |
Holger Vogt
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d63123a269
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gate resistance und gate conductance added, prime gate node added, not yet o.k. when rg is set, probably wrong signedness
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2018-05-04 20:34:09 +02:00 |
Holger Vogt
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40b9b18b01
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gate conductance added
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2018-05-04 20:34:09 +02:00 |
Holger Vogt
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e0734a3ade
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re-format for better readability
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2018-05-04 20:34:08 +02:00 |