remove unused code to calculate bulk-source and bulk-drain capacitors has been replaced already by capacitor from parallel bulk diode
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@ -41,8 +41,6 @@ VDMOSload(GENmodel *inModel, CKTcircuit *ckt)
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double delvds;
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double delvgd;
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double delvgs;
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double evbd;
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double evbs;
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double gcgb;
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double gcgd;
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double gcgs;
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@ -337,26 +335,14 @@ VDMOSload(GENmodel *inModel, CKTcircuit *ckt)
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/*
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* bulk-source and bulk-drain diodes
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* here we just evaluate the ideal diode current and the
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* corresponding derivative (conductance).
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* bulk-source and bulk-drain diodes are not available in vdmos
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*/
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if (vbs <= -3 * vt) {
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here->VDMOSgbs = ckt->CKTgmin;
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here->VDMOScbs = here->VDMOSgbs*vbs - SourceSatCur;
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} else {
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evbs = exp(MIN(MAX_EXP_ARG, vbs / vt));
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here->VDMOSgbs = SourceSatCur*evbs / vt + ckt->CKTgmin;
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here->VDMOScbs = SourceSatCur*(evbs - 1) + ckt->CKTgmin*vbs;
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}
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if (vbd <= -3 * vt) {
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here->VDMOSgbd = ckt->CKTgmin;
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here->VDMOScbd = here->VDMOSgbd*vbd - DrainSatCur;
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} else {
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evbd = exp(MIN(MAX_EXP_ARG, vbd / vt));
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here->VDMOSgbd = DrainSatCur*evbd / vt + ckt->CKTgmin;
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here->VDMOScbd = DrainSatCur*(evbd - 1) + ckt->CKTgmin*vbd;
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}
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here->VDMOSgbs = 0;
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here->VDMOScbs = 0;
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here->VDMOSgbd = 0;
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here->VDMOScbd = 0;
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/* now to determine whether the user was able to correctly
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* identify the source and drain of his device
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*/
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