remove unused code to calculate bulk-source and bulk-drain capacitors has been replaced already by capacitor from parallel bulk diode

This commit is contained in:
Holger Vogt 2018-04-11 10:46:59 +02:00 committed by rlar
parent 5f3957ba6f
commit b13675ea44
1 changed files with 7 additions and 21 deletions

View File

@ -41,8 +41,6 @@ VDMOSload(GENmodel *inModel, CKTcircuit *ckt)
double delvds;
double delvgd;
double delvgs;
double evbd;
double evbs;
double gcgb;
double gcgd;
double gcgs;
@ -337,26 +335,14 @@ VDMOSload(GENmodel *inModel, CKTcircuit *ckt)
/*
* bulk-source and bulk-drain diodes
* here we just evaluate the ideal diode current and the
* corresponding derivative (conductance).
* bulk-source and bulk-drain diodes are not available in vdmos
*/
if (vbs <= -3 * vt) {
here->VDMOSgbs = ckt->CKTgmin;
here->VDMOScbs = here->VDMOSgbs*vbs - SourceSatCur;
} else {
evbs = exp(MIN(MAX_EXP_ARG, vbs / vt));
here->VDMOSgbs = SourceSatCur*evbs / vt + ckt->CKTgmin;
here->VDMOScbs = SourceSatCur*(evbs - 1) + ckt->CKTgmin*vbs;
}
if (vbd <= -3 * vt) {
here->VDMOSgbd = ckt->CKTgmin;
here->VDMOScbd = here->VDMOSgbd*vbd - DrainSatCur;
} else {
evbd = exp(MIN(MAX_EXP_ARG, vbd / vt));
here->VDMOSgbd = DrainSatCur*evbd / vt + ckt->CKTgmin;
here->VDMOScbd = DrainSatCur*(evbd - 1) + ckt->CKTgmin*vbd;
}
here->VDMOSgbs = 0;
here->VDMOScbs = 0;
here->VDMOSgbd = 0;
here->VDMOScbd = 0;
/* now to determine whether the user was able to correctly
* identify the source and drain of his device
*/