remove unused parameters VDMOS_VBS/VBD and VDMOS_CAPBD/BS/GS/GD/GB
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33a68b7321
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2b444a3423
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@ -31,12 +31,8 @@ IFparm VDMOSpTable[] = { /* parameters */
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OPU( "ibs", VDMOS_CBS, IF_REAL, "B-S junction current"),
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OP( "vgs", VDMOS_VGS, IF_REAL, "Gate-Source voltage"),
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OP( "vds", VDMOS_VDS, IF_REAL, "Drain-Source voltage"),
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OP( "vbs", VDMOS_VBS, IF_REAL, "Bulk-Source voltage"),
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OPU( "vbd", VDMOS_VBD, IF_REAL, "Bulk-Drain voltage"),
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/*
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OP( "cgs", VDMOS_CGS, IF_REAL, "Gate-Source capacitance"),
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OP( "cgd", VDMOS_CGD, IF_REAL, "Gate-Drain capacitance"),
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*/
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OP( "cds", VDMOS_CDS, IF_REAL, "Drain-Source capacitance"),
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OPU( "dnode", VDMOS_DNODE, IF_INTEGER, "Number of the drain node "),
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@ -62,12 +58,6 @@ IFparm VDMOSpTable[] = { /* parameters */
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OPU( "gbd", VDMOS_GBD, IF_REAL, "Bulk-Drain conductance"),
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OPU( "gbs", VDMOS_GBS, IF_REAL, "Bulk-Source conductance"),
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OP( "cbd", VDMOS_CAPBD, IF_REAL, "Bulk-Drain capacitance"),
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OP( "cbs", VDMOS_CAPBS, IF_REAL, "Bulk-Source capacitance"),
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OP( "cgs", VDMOS_CAPGS, IF_REAL, "Gate-Source capacitance"),
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OP( "cgd", VDMOS_CAPGD, IF_REAL, "Gate-Drain capacitance"),
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OP( "cgb", VDMOS_CAPGB, IF_REAL, "Gate-Bulk capacitance"),
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OPU( "cqgs", VDMOS_CQGS, IF_REAL, "Capacitance due to gate-source charge storage"),
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OPU( "cqgd", VDMOS_CQGD, IF_REAL, "Capacitance due to gate-drain charge storage"),
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OPU( "cqgb", VDMOS_CQGB, IF_REAL, "Capacitance due to gate-bulk charge storage"),
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@ -131,45 +131,24 @@ VDMOSask(CKTcircuit *ckt, GENinstance *inst, int which, IFvalue *value,
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case VDMOS_GBS:
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value->rValue = here->VDMOSgbs;
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return(OK);
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case VDMOS_CAPBD:
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value->rValue = here->VDMOScapbd;
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return(OK);
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case VDMOS_CAPBS:
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value->rValue = here->VDMOScapbs;
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return(OK);
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case VDMOS_VBD:
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value->rValue = *(ckt->CKTstate0 + here->VDMOSvbd);
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return(OK);
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case VDMOS_VBS:
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value->rValue = *(ckt->CKTstate0 + here->VDMOSvbs);
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return(OK);
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case VDMOS_VGS:
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value->rValue = *(ckt->CKTstate0 + here->VDMOSvgs);
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return(OK);
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case VDMOS_VDS:
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value->rValue = *(ckt->CKTstate0 + here->VDMOSvds);
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return(OK);
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case VDMOS_CAPGS:
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value->rValue = 2* *(ckt->CKTstate0 + here->VDMOScapgs);
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return(OK);
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case VDMOS_QGS:
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value->rValue = *(ckt->CKTstate0 + here->VDMOSqgs);
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return(OK);
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case VDMOS_CQGS:
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value->rValue = *(ckt->CKTstate0 + here->VDMOScqgs);
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return(OK);
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case VDMOS_CAPGD:
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value->rValue = 2* *(ckt->CKTstate0 + here->VDMOScapgd);
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return(OK);
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case VDMOS_QGD:
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value->rValue = *(ckt->CKTstate0 + here->VDMOSqgd);
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return(OK);
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case VDMOS_CQGD:
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value->rValue = *(ckt->CKTstate0 + here->VDMOScqgd);
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return(OK);
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case VDMOS_CAPGB:
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value->rValue = 2* *(ckt->CKTstate0 + here->VDMOScapgb);
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return(OK);
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case VDMOS_QGB:
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value->rValue = *(ckt->CKTstate0 + here->VDMOSqgb);
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return(OK);
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@ -479,19 +479,12 @@ enum {
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VDMOS_GDS,
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VDMOS_GBD,
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VDMOS_GBS,
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VDMOS_CAPBD,
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VDMOS_CAPBS,
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VDMOS_VBD,
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VDMOS_VBS,
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VDMOS_VGS,
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VDMOS_VDS,
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VDMOS_CAPGS,
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VDMOS_QGS,
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VDMOS_CQGS,
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VDMOS_CAPGD,
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VDMOS_QGD,
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VDMOS_CQGD,
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VDMOS_CAPGB,
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VDMOS_QGB,
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VDMOS_CQGB,
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VDMOS_QBD,
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