Holger Vogt
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73db0477c0
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vdmosdist.c, white spaces
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2018-05-04 20:35:16 +02:00 |
Holger Vogt
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68fbc49216
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vdmos.c, sort parameters
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2018-05-04 20:35:14 +02:00 |
Holger Vogt
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285de59446
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enable alternative weak inversion model if parameter subslope is given
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2018-05-04 20:35:11 +02:00 |
Holger Vogt
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93e34540b8
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introduce parameter ksubthres, compatible to LTSPICE
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2018-05-04 20:35:10 +02:00 |
Holger Vogt
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a0867ff1a3
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bugfix: collapse the correct nodes if RB is zero or not given
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2018-05-04 20:35:09 +02:00 |
Holger Vogt
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2474c28a54
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Alternative simple weak inversion model
according to https://www.anasoft.co.uk/MOS1Model.htm.
Fits existing LTSPICE models by adapting the slope parameter.
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2018-05-04 20:35:08 +02:00 |
Holger Vogt
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0ece0d0c1c
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make breakdown voltage internally always positive
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2018-05-04 20:35:07 +02:00 |
Holger Vogt
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63be243f72
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Add a simple quasi saturation model according to V. d'Alessandro e.a., 2001
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2018-05-04 20:35:07 +02:00 |
Holger Vogt
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72e03e7eab
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replace parameter name subthres by subslope
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2018-05-04 20:35:06 +02:00 |
Holger Vogt
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5ba25a8716
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change parameter to scalef when calculating n empirical compromise between smooth curve and reduction of Id slightly above threshold
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2018-05-04 20:35:05 +02:00 |
Holger Vogt
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3ee3ab39a9
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Choose better interpolation and default parameters
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2018-05-04 20:35:04 +02:00 |
Holger Vogt
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729eac4e84
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cweakinv, add model parameter model->VDMOSsubshift
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2018-05-04 20:35:03 +02:00 |
Holger Vogt
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f0d131fb8a
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cweakinv, introduce sine scaling fucntion scalef()
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2018-05-04 20:35:02 +02:00 |
Holger Vogt
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284f68765d
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frontend/vectors.c, readability of warning message
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2018-05-04 20:35:01 +02:00 |
Holger Vogt
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68125ea3cf
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allow reading LTSPICE ascii raw files with 'load' command
by discarding 'Offset:'
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2018-05-04 20:35:00 +02:00 |
Holger Vogt
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43a6339071
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rename VDMOS_CGS, VDMOS_CGD, VDMOS_CDS to VDMOS_CAPGS, VDMOS_CAPGD, VDMOS_CAPDS C: current, CAP: capacitance, V: voltage, G: conductance, Q: charge
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2018-05-04 20:34:59 +02:00 |
Holger Vogt
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b4b6e3ebf8
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Add the bulk diode to the ac calculation
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2018-05-04 20:34:58 +02:00 |
Holger Vogt
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87e8b366ad
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Add gate resistor to AC calculation 2
Add matrix entries for gate resistor
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2018-05-04 20:34:56 +02:00 |
Holger Vogt
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5d6e3348c9
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Add gate resistor to AC calculation 1
Replace g (gate) by gp (gate prime) in existing matrix loading
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2018-05-04 20:34:54 +02:00 |
Holger Vogt
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570aacbf02
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Remove VDMOS_CBS, VDMOS_CBD, VDMOS_CB
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2018-05-04 20:34:52 +02:00 |
Holger Vogt
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2b444a3423
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remove unused parameters VDMOS_VBS/VBD and VDMOS_CAPBD/BS/GS/GD/GB
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2018-05-04 20:34:51 +02:00 |
Holger Vogt
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33a68b7321
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return only half of the capacitance cgs and cgd
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2018-05-04 20:34:50 +02:00 |
Holger Vogt
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62297b2450
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add weak inversion current capability
calibration of parameter subthres with LTSPICE is still missing.
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2018-05-04 20:34:47 +02:00 |
rlar
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ce2e704f56
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up, where to ? fixme, there are more ...
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2018-05-04 20:34:45 +02:00 |
rlar
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ede0fb1caa
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cleanup
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2018-05-04 20:34:44 +02:00 |
Holger Vogt
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4a3c707036
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add parallel resistor rds (between outer drain and source nodes, parallel to bulk diode)
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2018-05-04 20:34:42 +02:00 |
Holger Vogt
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b7c6145f5e
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rename the device multiplier m to mu, not to mix it up with the Body diode grading coefficient m
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2018-05-04 20:34:41 +02:00 |
Holger Vogt
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c5f47d3c1b
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Error message and exit if a vdmos device instance
has different source and bulk node (have to be the same).
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2018-05-04 20:34:40 +02:00 |
Holger Vogt
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b13675ea44
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remove unused code to calculate bulk-source and bulk-drain capacitors has been replaced already by capacitor from parallel bulk diode
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2018-05-04 20:34:39 +02:00 |
Holger Vogt
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f9b66af074
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add the mtriode parameter scale the triode region independently from saturation current
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2018-05-04 20:34:36 +02:00 |
Holger Vogt
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40fe11db07
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Body diode grading coefficient is m, not mj
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2018-05-04 20:34:34 +02:00 |
Holger Vogt
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2f719f7401
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function 'inp_vdmos_model' to process vdmos model lines towards ngspice compatibility
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2018-05-04 20:34:32 +02:00 |
Holger Vogt
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f3478d7f13
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re-format code
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2018-05-04 20:34:31 +02:00 |
Holger Vogt
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9d00a9e28d
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re-format code (whitespace only)
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2018-05-04 20:34:31 +02:00 |
Holger Vogt
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45f52c859b
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enable breakdown capability of parallel bulk diode
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2018-05-04 20:34:30 +02:00 |
Holger Vogt
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2bf70fa259
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add matrix entries for bulk diode
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2018-05-04 20:34:29 +02:00 |
Holger Vogt
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bfec119e5b
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Use better name for some parameters, cosmetics
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2018-05-04 20:34:27 +02:00 |
Holger Vogt
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4ac7a641ec
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diode model for bulk diode added code taken from dio.c etc. capacitance calculation for vdmos bulk cap removed, is now completely with the diode. An internal node added for series diode resistance RB
matrix entries not yet done!
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2018-05-04 20:34:26 +02:00 |
Holger Vogt
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1ce7fef519
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missing model parameters added
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2018-05-04 20:34:25 +02:00 |
Holger Vogt
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a4dc84ae35
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missing model parameters added
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2018-05-04 20:34:24 +02:00 |
Holger Vogt
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0dc0aa06c4
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re-introdeuce parameter phi Resulting temperature dependency of vto still not available
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2018-05-04 20:34:24 +02:00 |
Holger Vogt
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5b8c8072f3
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mobility and substrate related parameters and equations removed
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2018-05-04 20:34:22 +02:00 |
Holger Vogt
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9df45731e9
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depl cap calculation removed
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2018-05-04 20:34:21 +02:00 |
Holger Vogt
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0a213bea1a
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more on removing the sidewall capacitance
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2018-05-04 20:34:20 +02:00 |
Holger Vogt
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ef547eb8ff
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sidewall capacitance calculation removed
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2018-05-04 20:34:19 +02:00 |
Holger Vogt
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7df59a750e
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useful parameter declarations moved to stay
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2018-05-04 20:34:18 +02:00 |
Holger Vogt
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0ebb7348ca
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remove drain and source resistance contributions
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2018-05-04 20:34:18 +02:00 |
Holger Vogt
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84005efe8b
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lateral diffusion and overlap capacitance removed
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2018-05-04 20:34:17 +02:00 |
Holger Vogt
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e0ddc38519
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default transconductance parameter kp set to 1
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2018-05-04 20:34:16 +02:00 |
Holger Vogt
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e9e621de07
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remove effective channel length, replace by l
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2018-05-04 20:34:15 +02:00 |