OpenRAM/compiler/modules/sense_amp_array.py

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# See LICENSE for licensing information.
#
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# Copyright (c) 2016-2019 Regents of the University of California and The Board
# of Regents for the Oklahoma Agricultural and Mechanical College
# (acting for and on behalf of Oklahoma State University)
# All rights reserved.
#
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import design
from tech import drc
from vector import vector
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from sram_factory import factory
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import debug
from globals import OPTS
import logical_effort
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class sense_amp_array(design.design):
"""
Array of sense amplifiers to read the bitlines through the column mux.
Dynamically generated sense amp array for all bitlines.
"""
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def __init__(self, name, word_size, words_per_row):
design.design.__init__(self, name)
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debug.info(1, "Creating {0}".format(self.name))
self.add_comment("word_size {0}".format(word_size))
self.add_comment("words_per_row: {0}".format(words_per_row))
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self.word_size = word_size
self.words_per_row = words_per_row
self.row_size = self.word_size * self.words_per_row
self.create_netlist()
if not OPTS.netlist_only:
self.create_layout()
def create_netlist(self):
self.add_modules()
self.add_pins()
self.create_sense_amp_array()
def create_layout(self):
self.height = self.amp.height
if self.bitcell.width > self.amp.width:
self.width = self.bitcell.width * self.word_size * self.words_per_row
else:
self.width = self.amp.width * self.word_size * self.words_per_row
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self.place_sense_amp_array()
self.add_layout_pins()
self.route_rails()
self.add_boundary()
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self.DRC_LVS()
def add_pins(self):
for i in range(0,self.word_size):
self.add_pin("data_{0}".format(i))
self.add_pin("bl_{0}".format(i))
self.add_pin("br_{0}".format(i))
self.add_pin("en")
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self.add_pin("vdd")
self.add_pin("gnd")
def add_modules(self):
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self.amp = factory.create(module_type="sense_amp")
self.add_mod(self.amp)
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# This is just used for measurements,
# so don't add the module
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self.bitcell = factory.create(module_type="bitcell")
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def create_sense_amp_array(self):
self.local_insts = []
for i in range(0,self.word_size):
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name = "sa_d{0}".format(i)
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self.local_insts.append(self.add_inst(name=name,
mod=self.amp))
self.connect_inst(["bl_{0}".format(i),
"br_{0}".format(i),
"data_{0}".format(i),
"en", "vdd", "gnd"])
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def place_sense_amp_array(self):
if self.bitcell.width > self.amp.width:
amp_spacing = self.bitcell.width * self.words_per_row
else:
amp_spacing = self.amp.width * self.words_per_row
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for i in range(0,self.word_size):
amp_position = vector(amp_spacing * i, 0)
self.local_insts[i].place(amp_position)
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def add_layout_pins(self):
for i in range(len(self.local_insts)):
inst = self.local_insts[i]
gnd_pos = inst.get_pin("gnd").center()
self.add_via_center(layers=("metal2", "via2", "metal3"),
offset=gnd_pos)
self.add_layout_pin_rect_center(text="gnd",
layer="metal3",
offset=gnd_pos)
vdd_pos = inst.get_pin("vdd").center()
self.add_via_center(layers=("metal2", "via2", "metal3"),
offset=vdd_pos)
self.add_layout_pin_rect_center(text="vdd",
layer="metal3",
offset=vdd_pos)
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bl_pin = inst.get_pin("bl")
br_pin = inst.get_pin("br")
dout_pin = inst.get_pin("dout")
self.add_layout_pin(text="bl_{0}".format(i),
layer="metal2",
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offset=bl_pin.ll(),
width=bl_pin.width(),
height=bl_pin.height())
self.add_layout_pin(text="br_{0}".format(i),
layer="metal2",
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offset=br_pin.ll(),
width=br_pin.width(),
height=br_pin.height())
self.add_layout_pin(text="data_{0}".format(i),
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layer="metal2",
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offset=dout_pin.ll(),
width=dout_pin.width(),
height=dout_pin.height())
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def route_rails(self):
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# add sclk rail across entire array
sclk_offset = self.amp.get_pin("en").ll().scale(0,1)
self.add_layout_pin(text="en",
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layer="metal1",
offset=sclk_offset,
width=self.width,
height=drc("minwidth_metal1"))
def input_load(self):
return self.amp.input_load()
def analytical_delay(self, corner, slew, load):
return [self.amp.analytical_delay(corner, slew=slew, load=load)]
def get_en_cin(self):
"""Get the relative capacitance of all the sense amp enable connections in the array"""
sense_amp_en_cin = self.amp.get_en_cin()
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return sense_amp_en_cin * self.word_size
def get_drain_cin(self):
"""Get the relative capacitance of the drain of the PMOS isolation TX"""
from tech import parameter
#Bitcell drain load being used to estimate PMOS drain load
drain_load = logical_effort.convert_farad_to_relative_c(parameter['bitcell_drain_cap'])
return drain_load