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Update for HICUM2
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@@ -29,9 +29,8 @@ Table of contents
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6.1 DIO - Junction Diode
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7. Bipolar devices
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7.1 BJT - Bipolar Junction Transistor
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7.2 BJT2 - Bipolar Junction Transistor
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7.3 VBIC - Bipolar Junction Transistor
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7.4 HICUM2 - Bipolar Model
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7.2 VBIC - Bipolar Junction Transistor
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7.3 HICUM2 - Bipolar Model
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8. FET devices
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8.1 JFET - Junction Field Effect transistor
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9. HFET Devices
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@@ -343,30 +342,14 @@ will be updated every time the device specific code is altered or changed to ref
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Dir: devices/bjt
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Status:
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Enhancements over the original model:
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- Parallel Multiplier
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- Temperature difference from circuit temperature
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- Different area parameters for collector, base and emitter
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7.2 BJT2 - Bipolar Junction Transistor
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Ver: N/A
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Class: Q
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Level: 2
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Dir: devices/bjt2
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Status:
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This is the BJT model written by Alan Gillespie to support lateral
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devices. The model has been hacked by Dietmar Warning fixing some bugs
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and adding some features (temp. dependency on resistors).
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Enhancements over the original model:
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- Parallel Multiplier
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- Temperature dependency on rc,rb,re
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- Temperature difference from circuit temperature
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- Different area parameters for collector, base and emitter
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- Support lateral PNP
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7.3 VBIC - Bipolar Junction Transistor
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7.2 VBIC - Bipolar Junction Transistor
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Ver: N/A
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Class: Q
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@@ -382,6 +365,18 @@ will be updated every time the device specific code is altered or changed to ref
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Notes: This is the 4 terminals model, without excess phase and thermal
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network.
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7.3 HICUM 2 - Bipolar Junction Transistor for high frequency
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Ver: 2.4
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Class: Q
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Level: 4 & 9
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Dir: devices/hicum2
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HICUM: HIgh CUrrent Model is a physics-based geometry-scalable compact
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model for homo- and heterojunction bipolar transistors, developed by
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the HICUM Group at CEDIC, University of Technology Dresden, Germany.
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Web Site: https://www.iee.et.tu-dresden.de/iee/eb/hic_new/hic_intro.html
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8. FET devices
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