From f797a5f62c19d34839a054f6b539bb2d466191f5 Mon Sep 17 00:00:00 2001 From: Holger Vogt Date: Sun, 3 Jan 2021 08:47:22 +0100 Subject: [PATCH] Update for HICUM2 --- DEVICES | 37 ++++++++++++++++--------------------- 1 file changed, 16 insertions(+), 21 deletions(-) diff --git a/DEVICES b/DEVICES index a185a115a..276a970c6 100644 --- a/DEVICES +++ b/DEVICES @@ -29,9 +29,8 @@ Table of contents 6.1 DIO - Junction Diode 7. Bipolar devices 7.1 BJT - Bipolar Junction Transistor - 7.2 BJT2 - Bipolar Junction Transistor - 7.3 VBIC - Bipolar Junction Transistor - 7.4 HICUM2 - Bipolar Model + 7.2 VBIC - Bipolar Junction Transistor + 7.3 HICUM2 - Bipolar Model 8. FET devices 8.1 JFET - Junction Field Effect transistor 9. HFET Devices @@ -343,30 +342,14 @@ will be updated every time the device specific code is altered or changed to ref Dir: devices/bjt Status: - Enhancements over the original model: - - Parallel Multiplier - - Temperature difference from circuit temperature - - Different area parameters for collector, base and emitter - - 7.2 BJT2 - Bipolar Junction Transistor - - Ver: N/A - Class: Q - Level: 2 - Dir: devices/bjt2 - Status: - - This is the BJT model written by Alan Gillespie to support lateral - devices. The model has been hacked by Dietmar Warning fixing some bugs - and adding some features (temp. dependency on resistors). - Enhancements over the original model: - Parallel Multiplier - Temperature dependency on rc,rb,re - Temperature difference from circuit temperature - Different area parameters for collector, base and emitter + - Support lateral PNP - 7.3 VBIC - Bipolar Junction Transistor + 7.2 VBIC - Bipolar Junction Transistor Ver: N/A Class: Q @@ -382,6 +365,18 @@ will be updated every time the device specific code is altered or changed to ref Notes: This is the 4 terminals model, without excess phase and thermal network. + 7.3 HICUM 2 - Bipolar Junction Transistor for high frequency + + Ver: 2.4 + Class: Q + Level: 4 & 9 + Dir: devices/hicum2 + + HICUM: HIgh CUrrent Model is a physics-based geometry-scalable compact + model for homo- and heterojunction bipolar transistors, developed by + the HICUM Group at CEDIC, University of Technology Dresden, Germany. + Web Site: https://www.iee.et.tu-dresden.de/iee/eb/hic_new/hic_intro.html + 8. FET devices