Update for HICUM2

This commit is contained in:
Holger Vogt 2021-01-03 08:47:22 +01:00
parent 3ace60ffdc
commit f797a5f62c
1 changed files with 16 additions and 21 deletions

37
DEVICES
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@ -29,9 +29,8 @@ Table of contents
6.1 DIO - Junction Diode
7. Bipolar devices
7.1 BJT - Bipolar Junction Transistor
7.2 BJT2 - Bipolar Junction Transistor
7.3 VBIC - Bipolar Junction Transistor
7.4 HICUM2 - Bipolar Model
7.2 VBIC - Bipolar Junction Transistor
7.3 HICUM2 - Bipolar Model
8. FET devices
8.1 JFET - Junction Field Effect transistor
9. HFET Devices
@ -343,30 +342,14 @@ will be updated every time the device specific code is altered or changed to ref
Dir: devices/bjt
Status:
Enhancements over the original model:
- Parallel Multiplier
- Temperature difference from circuit temperature
- Different area parameters for collector, base and emitter
7.2 BJT2 - Bipolar Junction Transistor
Ver: N/A
Class: Q
Level: 2
Dir: devices/bjt2
Status:
This is the BJT model written by Alan Gillespie to support lateral
devices. The model has been hacked by Dietmar Warning fixing some bugs
and adding some features (temp. dependency on resistors).
Enhancements over the original model:
- Parallel Multiplier
- Temperature dependency on rc,rb,re
- Temperature difference from circuit temperature
- Different area parameters for collector, base and emitter
- Support lateral PNP
7.3 VBIC - Bipolar Junction Transistor
7.2 VBIC - Bipolar Junction Transistor
Ver: N/A
Class: Q
@ -382,6 +365,18 @@ will be updated every time the device specific code is altered or changed to ref
Notes: This is the 4 terminals model, without excess phase and thermal
network.
7.3 HICUM 2 - Bipolar Junction Transistor for high frequency
Ver: 2.4
Class: Q
Level: 4 & 9
Dir: devices/hicum2
HICUM: HIgh CUrrent Model is a physics-based geometry-scalable compact
model for homo- and heterojunction bipolar transistors, developed by
the HICUM Group at CEDIC, University of Technology Dresden, Germany.
Web Site: https://www.iee.et.tu-dresden.de/iee/eb/hic_new/hic_intro.html
8. FET devices