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Added some examples.

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pnenzi
2004-08-09 16:20:23 +00:00
parent 200a5b9c07
commit 4af6137cd3
63 changed files with 4083 additions and 0 deletions
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examples/cider/serial/astable.cir
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ASTABLE MULTIVIBRATOR
VIN 5 0 DC 0 PULSE(0 5 0 1US 1US 100US 100US)
VCC 6 0 5.0
RC1 6 1 1K
RC2 6 2 1K
RB1 6 3 30K
RB2 5 4 30K
C1 1 4 150PF
C2 2 3 150PF
Q1 1 3 0 QMOD AREA = 100P
Q2 2 4 0 QMOD AREA = 100P
.OPTION ACCT BYPASS=1
.TRAN 0.05US 8US 0US 0.05US
.PRINT TRAN V(1) V(2) V(3) V(4)
.MODEL QMOD NBJT LEVEL=1
+ X.MESH NODE=1 LOC=0.0
+ X.MESH NODE=61 LOC=3.0
+ REGION NUM=1 MATERIAL=1
+ MATERIAL NUM=1 SILICON NBGNN=1E17 NBGNP=1E17
+ MOBILITY MATERIAL=1 CONCMOD=SG FIELDMOD=SG
+ DOPING UNIF N.TYPE CONC=1E17 X.L=0.0 X.H=1.0
+ DOPING UNIF P.TYPE CONC=1E16 X.L=0.0 X.H=1.5
+ DOPING UNIF N.TYPE CONC=1E15 X.L=0.0 X.H=3.0
+ MODELS BGNW SRH CONCTAU AUGER CONCMOB FIELDMOB
+ OPTIONS BASE.LENGTH=1.0 BASE.DEPTH=1.25
.END
examples/cider/serial/charge.cir
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MOS CHARGE PUMP
VIN 4 0 DC 0V PULSE 0 5 15NS 5NS 5NS 50NS 100NS
VDD 5 6 DC 0V PULSE 0 5 25NS 5NS 5NS 50NS 100NS
VBB 0 7 DC 0V PULSE 0 5 0NS 5NS 5NS 50NS 100NS
RD 6 2 10K
M1 5 4 3 7 MMOD W=100UM
VS 3 2 0
VC 2 1 0
C2 1 0 10PF
.IC V(3)=1.0
.TRAN 2NS 200NS
.OPTIONS ACCT BYPASS=1
.PRINT TRAN V(1) V(2)
.MODEL MMOD NUMOS
+ X.MESH N=1 L=0
+ X.MESH N=3 L=0.4
+ X.MESH N=7 L=0.6
+ X.MESH N=15 L=1.4
+ X.MESH N=19 L=1.6
+ X.MESH N=21 L=2.0
+
+ Y.MESH N=1 L=0
+ Y.MESH N=4 L=0.015
+ Y.MESH N=8 L=0.05
+ Y.MESH N=12 L=0.25
+ Y.MESH N=14 L=0.35
+ Y.MESH N=17 L=0.5
+ Y.MESH N=21 L=1.0
+
+ REGION NUM=1 MATERIAL=1 Y.L=0.015
+ MATERIAL NUM=1 SILICON
+ MOBILITY MATERIAL=1 CONCMOD=SG FIELDMOD=SG
+
+ REGION NUM=2 MATERIAL=2 Y.H=0.015 X.L=0.5 X.H=1.5
+ MATERIAL NUM=2 OXIDE
+
+ ELEC NUM=1 IX.L=18 IX.H=21 IY.L=4 IY.H=4
+ ELEC NUM=2 IX.L=5 IX.H=17 IY.L=1 IY.H=1
+ ELEC NUM=3 IX.L=1 IX.H=4 IY.L=4 IY.H=4
+ ELEC NUM=4 IX.L=1 IX.H=21 IY.L=21 IY.H=21
+
+ DOPING UNIF N.TYPE CONC=1E18 X.L=0.0 X.H=0.5 Y.L=0.015 Y.H=0.25
+ DOPING UNIF N.TYPE CONC=1E18 X.L=1.5 X.H=2.0 Y.L=0.015 Y.H=0.25
+ DOPING UNIF P.TYPE CONC=1E15 X.L=0.0 X.H=2.0 Y.L=0.015 Y.H=1.0
+ DOPING UNIF P.TYPE CONC=1.3E17 X.L=0.5 X.H=1.5 Y.L=0.015 Y.H=0.05
+
+ MODELS CONCMOB FIELDMOB
+ METHOD ONEC
.END
examples/cider/serial/colposc.cir
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COLPITT'S OSCILLATOR CIRCUIT
R1 1 0 1
Q1 2 1 3 QMOD AREA = 100P
VCC 4 0 5
RL 4 2 750
C1 2 3 500P
C2 4 3 4500P
L1 4 2 5UH
RE 3 6 4.65K
VEE 6 0 DC -15 PWL 0 -15 1E-9 -10
.TRAN 30N 12U
.PRINT TRAN V(2)
.MODEL QMOD NBJT LEVEL=1
+ X.MESH NODE=1 LOC=0.0
+ X.MESH NODE=61 LOC=3.0
+ REGION NUM=1 MATERIAL=1
+ MATERIAL NUM=1 SILICON NBGNN=1E17 NBGNP=1E17
+ MOBILITY MATERIAL=1 CONCMOD=SG FIELDMOD=SG
+ DOPING UNIF N.TYPE CONC=1E17 X.L=0.0 X.H=1.0
+ DOPING UNIF P.TYPE CONC=1E16 X.L=0.0 X.H=1.5
+ DOPING UNIF N.TYPE CONC=1E15 X.L=0.0 X.H=3.0
+ MODELS BGNW SRH CONCTAU AUGER CONCMOB FIELDMOB
+ OPTIONS BASE.LENGTH=1.0 BASE.DEPTH=1.25
.OPTIONS ACCT BYPASS=1
.END
examples/cider/serial/dbridge.cir
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DIODE BRIDGE RECTIFIER
VLINE 3 4 0.0V SIN 0V 10V 60HZ
VGRND 2 0 0.0V
D1 3 1 M_PN AREA=100
D2 4 1 M_PN AREA=100
D3 2 3 M_PN AREA=100
D4 2 4 M_PN AREA=100
RL 1 2 1.0K
.MODEL M_PN NUMD LEVEL=1
+ ***************************************
+ *** ONE-DIMENSIONAL NUMERICAL DIODE ***
+ ***************************************
+ OPTIONS DEFA=1P
+ X.MESH LOC=0.0 N=1
+ X.MESH LOC=30.0 N=201
+ DOMAIN NUM=1 MATERIAL=1
+ MATERIAL NUM=1 SILICON
+ MOBILITY MAT=1 CONCMOD=CT FIELDMOD=CT
+ DOPING GAUSS P.TYPE CONC=1E20 X.L=0.0 X.H=0.0 CHAR.L=1.0
+ DOPING UNIF N.TYPE CONC=1E14 X.L=0.0 X.H=30.0
+ DOPING GAUSS N.TYPE CONC=5E19 X.L=30.0 X.H=30.0 CHAR.L=2.0
+ MODELS BGN ^AVAL SRH AUGER CONCTAU CONCMOB FIELDMOB
+ METHOD AC=DIRECT
.OPTION ACCT BYPASS=1 METHOD=GEAR
.TRAN 0.5MS 50MS
.PRINT I(VLINE)
.END
examples/cider/serial/invchain.cir
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4 STAGE RTL INVERTER CHAIN
VIN 1 0 DC 0V PWL 0NS 0V 1NS 5V
VCC 12 0 DC 5.0V
RC1 12 3 2.5K
RB1 1 2 8K
Q1 3 2 0 QMOD AREA = 100P
RB2 3 4 8K
RC2 12 5 2.5K
Q2 5 4 0 QMOD AREA = 100P
RB3 5 6 8K
RC3 12 7 2.5K
Q3 7 6 0 QMOD AREA = 100P
RB4 7 8 8K
RC4 12 9 2.5K
Q4 9 8 0 QMOD AREA = 100P
.PRINT TRAN V(3) V(5) V(9)
.TRAN 1E-9 10E-9
.MODEL QMOD NBJT LEVEL=1
+ X.MESH NODE=1 LOC=0.0
+ X.MESH NODE=61 LOC=3.0
+ REGION NUM=1 MATERIAL=1
+ MATERIAL NUM=1 SILICON NBGNN=1E17 NBGNP=1E17
+ MOBILITY MATERIAL=1 CONCMOD=SG FIELDMOD=SG
+ DOPING UNIF N.TYPE CONC=1E17 X.L=0.0 X.H=1.0
+ DOPING UNIF P.TYPE CONC=1E16 X.L=0.0 X.H=1.5
+ DOPING UNIF N.TYPE CONC=1E15 X.L=0.0 X.H=3.0
+ MODELS BGNW SRH CONCTAU AUGER CONCMOB FIELDMOB
+ OPTIONS BASE.LENGTH=1.0 BASE.DEPTH=1.25
.OPTION ACCT BYPASS=1
.END
examples/cider/serial/meclgate.cir
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MOTOROLA MECL III ECL GATE
*.DC VIN -2.0 0 0.02
.TRAN 0.2NS 20NS
VEE 22 0 -6.0
VIN 1 0 PULSE -0.8 -1.8 0.2NS 0.2NS 0.2NS 10NS 20NS
RS 1 2 50
Q1 4 2 6 QMOD AREA = 100P
Q2 4 3 6 QMOD AREA = 100P
Q3 5 7 6 QMOD AREA = 100P
Q4 0 8 7 QMOD AREA = 100P
D1 8 9 DMOD
D2 9 10 DMOD
RP1 3 22 50K
RC1 0 4 100
RC2 0 5 112
RE 6 22 380
R1 7 22 2K
R2 0 8 350
R3 10 22 1958
Q5 0 5 11 QMOD AREA = 100P
Q6 0 4 12 QMOD AREA = 100P
RP2 11 22 560
RP3 12 22 560
Q7 13 12 15 QMOD AREA = 100P
Q8 14 16 15 QMOD AREA = 100P
RE2 15 22 380
RC3 0 13 100
RC4 0 14 112
Q9 0 17 16 QMOD AREA = 100P
R4 16 22 2K
R5 0 17 350
D3 17 18 DMOD
D4 18 19 DMOD
R6 19 22 1958
Q10 0 14 20 QMOD AREA = 100P
Q11 0 13 21 QMOD AREA = 100P
RP4 20 22 560
RP5 21 22 560
.MODEL DMOD D RS=40 TT=0.1NS CJO=0.9PF N=1 IS=1E-14 EG=1.11 VJ=0.8 M=0.5
.MODEL QMOD NBJT LEVEL=1
+ X.MESH NODE=1 LOC=0.0
+ X.MESH NODE=10 LOC=0.9
+ X.MESH NODE=20 LOC=1.1
+ X.MESH NODE=30 LOC=1.4
+ X.MESH NODE=40 LOC=1.6
+ X.MESH NODE=61 LOC=3.0
+ REGION NUM=1 MATERIAL=1
+ MATERIAL NUM=1 SILICON NBGNN=1E17 NBGNP=1E17
+ MOBILITY MATERIAL=1 CONCMOD=SG FIELDMOD=SG
+ DOPING UNIF N.TYPE CONC=1E17 X.L=0.0 X.H=1.0
+ DOPING UNIF P.TYPE CONC=1E16 X.L=0.0 X.H=1.5
+ DOPING UNIF N.TYPE CONC=1E15 X.L=0.0 X.H=3.0
+ MODELS BGNW SRH CONCTAU AUGER CONCMOB FIELDMOB
+ OPTIONS BASE.LENGTH=1.0 BASE.DEPTH=1.25
.OPTIONS ACCT BYPASS=1
.PRINT TRAN V(12) V(21)
.END
examples/cider/serial/nmosinv.cir
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RESISTIVE LOAD NMOS INVERTER
VIN 1 0 PWL 0 0.0 2NS 5
VDD 3 0 DC 5.0
RD 3 2 2.5K
M1 2 1 4 5 MMOD W=10UM
CL 2 0 2PF
VB 5 0 0
VS 4 0 0
.MODEL MMOD NUMOS
+ X.MESH L=0.0 N=1
+ X.MESH L=0.6 N=4
+ X.MESH L=0.7 N=5
+ X.MESH L=1.0 N=7
+ X.MESH L=1.2 N=11
+ X.MESH L=3.2 N=21
+ X.MESH L=3.4 N=25
+ X.MESH L=3.7 N=27
+ X.MESH L=3.8 N=28
+ X.MESH L=4.4 N=31
+
+ Y.MESH L=-.05 N=1
+ Y.MESH L=0.0 N=5
+ Y.MESH L=.05 N=9
+ Y.MESH L=0.3 N=14
+ Y.MESH L=2.0 N=19
+
+ REGION NUM=1 MATERIAL=1 Y.L=0.0
+ MATERIAL NUM=1 SILICON
+ MOBILITY MATERIAL=1 CONCMOD=SG FIELDMOD=SG
+
+ REGION NUM=2 MATERIAL=2 Y.H=0.0 X.L=0.7 X.H=3.7
+ MATERIAL NUM=2 OXIDE
+
+ ELEC NUM=1 X.L=3.8 X.H=4.4 Y.L=0.0 Y.H=0.0
+ ELEC NUM=2 X.L=0.7 X.H=3.7 IY.L=1 IY.H=1
+ ELEC NUM=3 X.L=0.0 X.H=0.6 Y.L=0.0 Y.H=0.0
+ ELEC NUM=4 X.L=0.0 X.H=4.4 Y.L=2.0 Y.H=2.0
+
+ DOPING UNIF P.TYPE CONC=2.5E16 X.L=0.0 X.H=4.4 Y.L=0.0 Y.H=2.0
+ DOPING UNIF P.TYPE CONC=1E16 X.L=0.0 X.H=4.4 Y.L=0.0 Y.H=0.05
+ DOPING UNIF N.TYPE CONC=1E20 X.L=0.0 X.H=1.1 Y.L=0.0 Y.H=0.2
+ DOPING UNIF N.TYPE CONC=1E20 X.L=3.3 X.H=4.4 Y.L=0.0 Y.H=0.2
+
+ MODELS CONCMOB FIELDMOB
+ METHOD AC=DIRECT ONEC
.TRAN 0.2NS 30NS
.OPTIONS ACCT BYPASS=1
.PRINT TRAN V(1) V(2)
.END
examples/cider/serial/pass.cir
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TURNOFF TRANSIENT OF PASS TRANSISTOR
M1 11 2 3 4 MMOD W=20UM
CS 1 0 6.0PF
CL 3 0 6.0PF
R1 3 6 200K
VIN 6 0 DC 0
VDRN 1 11 DC 0
VG 2 0 DC 5 PWL 0 5 0.1N 0 1 0
VB 4 0 DC 0.0
.TRAN 0.05NS 0.2NS 0.0NS 0.05NS
.PRINT TRAN V(1) I(VDRN)
.IC V(1)=0 V(3)=0
.OPTION ACCT BYPASS=1
.MODEL MMOD NUMOS
+ X.MESH L=0.0 N=1
+ X.MESH L=0.6 N=4
+ X.MESH L=0.7 N=5
+ X.MESH L=1.0 N=7
+ X.MESH L=1.2 N=11
+ X.MESH L=3.2 N=21
+ X.MESH L=3.4 N=25
+ X.MESH L=3.7 N=27
+ X.MESH L=3.8 N=28
+ X.MESH L=4.4 N=31
+
+ Y.MESH L=-.05 N=1
+ Y.MESH L=0.0 N=5
+ Y.MESH L=.05 N=9
+ Y.MESH L=0.3 N=14
+ Y.MESH L=2.0 N=19
+
+ REGION NUM=1 MATERIAL=1 Y.L=0.0
+ MATERIAL NUM=1 SILICON
+ MOBILITY MATERIAL=1 CONCMOD=SG FIELDMOD=SG
+
+ REGION NUM=2 MATERIAL=2 Y.H=0.0 X.L=0.7 X.H=3.7
+ MATERIAL NUM=2 OXIDE
+
+ ELEC NUM=1 X.L=3.8 X.H=4.4 Y.L=0.0 Y.H=0.0
+ ELEC NUM=2 X.L=0.7 X.H=3.7 IY.L=1 IY.H=1
+ ELEC NUM=3 X.L=0.0 X.H=0.6 Y.L=0.0 Y.H=0.0
+ ELEC NUM=4 X.L=0.0 X.H=4.4 Y.L=2.0 Y.H=2.0
+
+ DOPING UNIF P.TYPE CONC=2.5E16 X.L=0.0 X.H=4.4 Y.L=0.0 Y.H=2.0
+ DOPING UNIF P.TYPE CONC=1E16 X.L=0.0 X.H=4.4 Y.L=0.0 Y.H=0.05
+ DOPING UNIF N.TYPE CONC=1E20 X.L=0.0 X.H=1.1 Y.L=0.0 Y.H=0.2
+ DOPING UNIF N.TYPE CONC=1E20 X.L=3.3 X.H=4.4 Y.L=0.0 Y.H=0.2
+
+ MODELS CONCMOB FIELDMOB
+ METHOD AC=DIRECT ONEC
.END
examples/cider/serial/pullup.cir
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BICMOS INVERTER PULLUP CIRCUIT
VDD 1 0 5.0V
VSS 2 0 0.0V
VIN 3 0 0.75V
VC 1 11 0.0V
VB 5 15 0.0V
Q1 11 15 4 M_NPN AREA=4
M1 5 3 1 1 M_PMOS W=20U L=2U AD=30P AS=30P PD=21U PS=21U
CL 4 0 5.0PF
.IC V(4)=0.75V V(5)=0.0V
.MODEL M_PMOS PMOS VTO=-0.8 UO=250 TOX=25N NSUB=5E16
+ UCRIT=10K UEXP=.15 VMAX=50K NEFF=2 XJ=.02U
+ LD=.15U CGSO=.1N CGDO=.1N CJ=.12M MJ=0.5
+ CJSW=0.3N MJSW=0.5 LEVEL=2
.MODEL M_NPN NBJT LEVEL=2
+ TITLE TWO-DIMENSIONAL NUMERICAL POLYSILICON EMITTER BIPOLAR TRANSISTOR
+ $ SINCE ONLY HALF THE DEVICE IS SIMULATED, DOUBLE THE UNIT WIDTH TO GET
+ $ 1.0 UM EMITTER.
+ OPTIONS DEFW=2.0U
+ OUTPUT STATISTICS
+
+ X.MESH W=2.0 H.E=0.02 H.M=0.5 R=2.0
+ X.MESH W=0.5 H.S=0.02 H.M=0.2 R=2.0
+
+ Y.MESH L=-0.2 N=1
+ Y.MESH L= 0.0 N=5
+ Y.MESH W=0.10 H.E=0.004 H.M=0.05 R=2.5
+ Y.MESH W=0.15 H.S=0.004 H.M=0.02 R=2.5
+ Y.MESH W=1.05 H.S=0.02 H.M=0.1 R=2.5
+
+ DOMAIN NUM=1 MATERIAL=1 X.L=2.0 Y.H=0.0
+ DOMAIN NUM=2 MATERIAL=2 X.H=2.0 Y.H=0.0
+ DOMAIN NUM=3 MATERIAL=3 Y.L=0.0
+ MATERIAL NUM=1 POLYSILICON
+ MATERIAL NUM=2 OXIDE
+ MATERIAL NUM=3 SILICON
+
+ ELEC NUM=1 X.L=0.0 X.H=0.0 Y.L=1.1 Y.H=1.3
+ ELEC NUM=2 X.L=0.0 X.H=0.5 Y.L=0.0 Y.H=0.0
+ ELEC NUM=3 X.L=2.0 X.H=3.0 Y.L=-0.2 Y.H=-0.2
+
+ DOPING GAUSS N.TYPE CONC=3E20 X.L=2.0 X.H=3.0 Y.L=-0.2 Y.H=0.0
+ + CHAR.L=0.047 LAT.ROTATE
+ DOPING GAUSS P.TYPE CONC=5E18 X.L=0.0 X.H=5.0 Y.L=-0.2 Y.H=0.0
+ + CHAR.L=0.100 LAT.ROTATE
+ DOPING GAUSS P.TYPE CONC=1E20 X.L=0.0 X.H=0.5 Y.L=-0.2 Y.H=0.0
+ + CHAR.L=0.100 LAT.ROTATE RATIO=0.7
+ DOPING UNIF N.TYPE CONC=1E16 X.L=0.0 X.H=5.0 Y.L=0.0 Y.H=1.3
+ DOPING GAUSS N.TYPE CONC=5E19 X.L=0.0 X.H=5.0 Y.L=1.3 Y.H=1.3
+ + CHAR.L=0.100 LAT.ROTATE
+
+ METHOD AC=DIRECT ITLIM=10
+ MODELS BGN SRH AUGER CONCTAU CONCMOB FIELDMOB
.TRAN 0.5NS 4.0NS
.PRINT TRAN V(3) V(4)
.OPTION ACCT BYPASS=1
.END
examples/cider/serial/readme
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This directory contains the CIDER serial-version benchmarks used in the
thesis "Design-Oriented Mixed-Level Circuit and Device Simulation" by
David A. Gates.
examples/cider/serial/recovery.cir
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DIODE REVERSE RECOVERY
VPP 1 0 0.0V (PULSE 1.0V -1.0V 1NS 1PS 1PS 20NS 40NS)
VNN 2 0 0.0V
RS 1 3 1.0
LS 3 4 0.5UH
DT 4 2 M_PIN AREA=1
.MODEL M_PIN NUMD LEVEL=2
+ OPTIONS DEFW=100U
+ X.MESH N=1 L=0.0
+ X.MESH N=2 L=0.2
+ X.MESH N=4 L=0.4
+ X.MESH N=8 L=0.6
+ X.MESH N=13 L=1.0
+
+ Y.MESH N=1 L=0.0
+ Y.MESH N=9 L=4.0
+ Y.MESH N=24 L=10.0
+ Y.MESH N=29 L=15.0
+ Y.MESH N=34 L=20.0
+
+ DOMAIN NUM=1 MATERIAL=1
+ MATERIAL NUM=1 SILICON TN=20NS TP=20NS
+
+ ELECTRODE NUM=1 X.L=0.6 X.H=1.0 Y.L=0.0 Y.H=0.0
+ ELECTRODE NUM=2 X.L=-0.1 X.H=1.0 Y.L=20.0 Y.H=20.0
+
+ DOPING GAUSS P.TYPE CONC=1.0E19 CHAR.LEN=1.076 X.L=0.75 X.H=1.1 Y.H=0.0
+ + LAT.ROTATE RATIO=0.1
+ DOPING UNIF N.TYPE CONC=1.0E14
+ DOPING GAUSS N.TYPE CONC=1.0E19 CHAR.LEN=1.614 X.L=-0.1 X.H=1.1 Y.L=20.0
+
+ MODELS BGN SRH AUGER CONCTAU CONCMOB FIELDMOB
.OPTION ACCT BYPASS=1
.TRAN 0.1NS 10NS
.PRINT TRAN V(3) I(VIN)
.END
examples/cider/serial/rtlinv.cir
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RTL INVERTER
VIN 1 0 DC 1 PWL 0 4 1NS 0
VCC 12 0 DC 5.0
RC1 12 3 2.5K
RB1 1 2 8K
Q1 3 2 0 QMOD AREA = 100P
.OPTION ACCT BYPASS=1
.TRAN 0.5N 5N
.PRINT TRAN V(2) V(3)
.MODEL QMOD NBJT LEVEL=1
+ X.MESH NODE=1 LOC=0.0
+ X.MESH NODE=61 LOC=3.0
+ REGION NUM=1 MATERIAL=1
+ MATERIAL NUM=1 SILICON NBGNN=1E17 NBGNP=1E17
+ MOBILITY MATERIAL=1 CONCMOD=SG FIELDMOD=SG
+ DOPING UNIF N.TYPE CONC=1E17 X.L=0.0 X.H=1.0
+ DOPING UNIF P.TYPE CONC=1E16 X.L=0.0 X.H=1.5
+ DOPING UNIF N.TYPE CONC=1E15 X.L=0.0 X.H=3.0
+ MODELS BGNW SRH CONCTAU AUGER CONCMOB FIELDMOB
+ OPTIONS BASE.LENGTH=1.0 BASE.DEPTH=1.25
.END
examples/cider/serial/vco.cir
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VOLTAGE CONTROLLED OSCILLATOR
RC1 7 5 1K
RC2 7 6 1K
Q5 7 7 5 QMOD AREA = 100P
Q6 7 7 6 QMOD AREA = 100P
Q3 7 5 2 QMOD AREA = 100P
Q4 7 6 1 QMOD AREA = 100P
IB1 2 0 .5MA
IB2 1 0 .5MA
CB1 2 0 1PF
CB2 1 0 1PF
Q1 5 1 3 QMOD AREA = 100P
Q2 6 2 4 QMOD AREA = 100P
C1 3 4 .1UF
IS1 3 0 DC 2.5MA PULSE 2.5MA 0.5MA 0 1US 1US 50MS
IS2 4 0 1MA
VCC 7 0 10
.MODEL QMOD NBJT LEVEL=1
+ X.MESH NODE=1 LOC=0.0
+ X.MESH NODE=61 LOC=3.0
+ REGION NUM=1 MATERIAL=1
+ MATERIAL NUM=1 SILICON NBGNN=1E17 NBGNP=1E17
+ MOBILITY MATERIAL=1 CONCMOD=SG FIELDMOD=SG
+ DOPING UNIF N.TYPE CONC=1E17 X.L=0.0 X.H=1.0
+ DOPING UNIF P.TYPE CONC=1E16 X.L=0.0 X.H=1.5
+ DOPING UNIF N.TYPE CONC=1E15 X.L=0.0 X.H=3.0
+ MODELS BGNW SRH CONCTAU AUGER CONCMOB FIELDMOB
+ OPTIONS BASE.LENGTH=1.0 BASE.DEPTH=1.25
.OPTION ACCT BYPASS=1
.TRAN 3US 600US 0 3US
.PRINT TRAN V(4)
.END