diff --git a/examples/TransImpedanceAmp/README b/examples/TransImpedanceAmp/README
new file mode 100644
index 000000000..ea5c249da
--- /dev/null
+++ b/examples/TransImpedanceAmp/README
@@ -0,0 +1,41 @@
+This directory holds a SPICE netlist with SPICE2 POLY constructs in
+controlled sources as typically found in vendor models.  The circuit
+is just a two-stage transimpedance amp using an AD8009,
+along with some slow components (AD780 and OP177A) to set bias
+points.  Vendor models are used for all active components.
+Successfully running this test shows that you have successfully built
+the XSpice stuff with the POLY codemodel, and that you should be able
+to simulate SPICE netlists with embedded vendor models.
+
+To run this netlist, just do the following:
+
+[localhost]# ngspice
+ngspice 1 -> source output.net
+ngspice 2 -> run
+ngspice 3 -> plot Vout2
+
+(Note that when you read in the netlist, you will get a bunch of 
+warnings saying stuff like:
+
+Warning -- Level not specified on line "()"
+Using level 1.
+
+Also, ngspice will complain about:
+
+Error on line 50 : r:u101:1 u101:40 0 1e3 tc=7e-6
+         unknown parameter (tc)
+Error on line 283 : .temp 0 25 50 75 100
+         Warning: .TEMP card obsolete - use .options TEMP and TNOM
+
+You can ignore all this stuff . . . .)
+
+You should get a pop-up window showing two square pulses (the second
+smaller than the first) with a little bit of overshoot on the rising
+and falling edges.
+
+This stuff was done as an adjunct to work on the gEDA project.
+Information about gEDA is available at http://geda.seul.org/ .
+Please direct all questions/suggestions/bugs/complaints about XSpice
+extensions to ngspice to Stuart Brorson -- mailto:sdb@cloud9.net.
+
+6.23.2002 -- SDB.
diff --git a/examples/TransImpedanceAmp/output.net b/examples/TransImpedanceAmp/output.net
new file mode 100644
index 000000000..22d708161
--- /dev/null
+++ b/examples/TransImpedanceAmp/output.net
@@ -0,0 +1,460 @@
+*********************************************************
+* Spice file generated by gnetlist                      *
+* spice-SDB version 3.30.2003 by SDB --                 *
+* provides advanced spice netlisting capability.        *
+* Documentation at http://www.brorson.com/gEDA/SPICE/   *
+*********************************************************
+
+* Command stuff
+.options gmin=1e-9
+.options abstol=1e-11
+* .ac dec 10 10MegHz 10 Ghz
+* Remainder of file
+R112 0 6 1Meg 
+R111 0 8 10Meg 
+R110 0 7 1Meg 
+Rref2in 11 VU780out 25000 
+Rref2fb VU2bias+ 11 33 
+C201 0 9 1uF 
+C202 10 0 1uF 
+XU200 0 11 10 9 VU2bias+ OP177A 
+R202 10 +5V 22 
+R201 -5V 9 22 
+Rref1in VU100in- VU780out 9130 
+Rref1fb VU1bias+ VU100in- 33 
+XU101 +5V 7 0 6 VU780out 8 AD780A 
+* AD780A SPICE Macromodel 5/93, Rev. A
+* AAG / PMI
+*
+* This version of the AD780 voltage reference model simulates the worst case
+* parameters of the 'A' grade.  The worst case parameters used
+* correspond to those in the data sheet.
+*
+* Copyright 1993 by Analog Devices, Inc.
+*
+* Refer to "README.DOC" file for License Statement.  Use of this model
+* indicates your acceptance with the terms and provisions in the License Statement.
+*
+*  NODE NUMBERS
+*              VIN
+*               |  TEMP
+*               |  |  GND
+*               |  |  |  TRIM
+*               |  |  |  |  VOUT
+*               |  |  |  |  |  RANGE
+*               |  |  |  |  |  |
+.SUBCKT AD780A  2  3  4  5  6  8
+*
+* BANDGAP REFERENCE
+*
+I1 4 40 DC 1.21174E-3
+R1 40 4 1E3 TC=7E-6
+EN 10 40 42 0 1
+G1 4 10 2 4 4.85668E-9
+F1 4 10 POLY(2) VS1 VS2 (0,2.42834E-5,3.8E-5)
+Q1 2 10 11 QT
+I2 11 4 DC 12.84E-6
+R2 11 3 1E3
+I3 3 4 DC 0
+*
+* NOISE VOLTAGE GENERATOR
+*
+VN1 41 0 DC 2
+DN1 41 42 DEN
+DN2 42 43 DEN
+VN2 0 43 DC 2
+*
+* INTERNAL OP AMP
+*
+G2 4 12 10 20 1.93522E-4
+R3 12 4 2.5837E9
+C1 12 4 6.8444E-11
+D1 12 13 DX
+V1 2 13 DC 1.2
+*
+* SECONDARY POLE @ 508 kHz
+*
+G3 4 14 12 4 1E-6
+R4 14 4 1E6
+C2 14 4 3.1831E-13
+*
+* OUTPUT STAGE
+*
+ISY 2 4 6.8282E-4
+FSY 2 4 V1 -1
+RSY 2 4 500E3
+*
+G4 4 15 14 4 25E-6
+R5 15 4 40E3
+Q2 4 15 16 QP
+I4 2 16 DC 100E-6
+Q3 4 16 18 QP
+R6 18 23 15
+R7 16 21 150E3
+R8 2 17 34.6
+Q4 17 16 19 QN
+R9 21 20 6.46E3
+R10 20 4 6.1E3
+R11 20 5 53E3
+R12 20 8 15.6E3
+I5 5 4 DC 0
+I6 8 4 DC 0
+VS1 21 19 DC 0
+VS2 23 21 DC 0
+L1 21 6 1E-7
+*
+* OUTPUT CURRENT LIMIT
+*
+FSC 15 4 VSC 1
+VSC 2 22 DC 0
+QSC 22 2 17 QN
+*
+.MODEL QT NPN(IS=1.68E-16 BF=1E4)
+.MODEL QN NPN(IS=1E-15 BF=1E3)
+.MODEL QP PNP(IS=1E-15 BF=1E3)
+.MODEL DX D(IS=1E-15)
+.MODEL DEN D(IS=1E-12 RS=2.425E+05 AF=1 KF=6.969E-16)
+.ENDS AD780A
+C101 0 U100V- 1uF 
+C102 U100V+ 0 1uF 
+XU100 0 VU100in- U100V+ U100V- VU1bias+ OP177A 
+* OP177A SPICE Macro-model                 12/90, Rev. B
+*                                           JCB / PMI
+*
+* Revision History:
+*   REV. B
+*     Re-ordered subcircuit call out nodes to put the 
+*     output node last.
+*     Changed Ios from 1E-9 to 0.5E-9
+*     Added F1 and F2 to fix short circuit current limit.
+*
+*
+* This version of the OP-177 model simulates the worst case 
+* parameters of the 'A' grade.  The worst case parameters
+* used correspond to those in the data book.
+*
+*
+* Copyright 1990 by Analog Devices, Inc.
+*
+* Refer to "README.DOC" file for License Statement.  Use of this model
+* indicates your acceptance with the terms and provisions in the License Statement.
+*
+* Node assignments
+*                non-inverting input
+*                | inverting input
+*                | | positive supply
+*                | | |  negative supply
+*                | | |  |  output
+*                | | |  |  |
+.SUBCKT OP177A   1 2 99 50 39
+*
+* INPUT STAGE & POLE AT 6 MHZ
+*
+R1   2   3    5E11
+R2   1   3    5E11
+R3   5  97    0.0606
+R4   6  97    0.0606
+CIN  1   2    4E-12
+C2   5   6    218.9E-9
+I1   4  51    1
+IOS  1   2    0.5E-9
+EOS  9  10    POLY(1)  30 33  10E-6  1
+Q1   5  2  7  QX
+Q2   6  9  8  QX
+R5   7   4    0.009
+R6   8   4    0.009
+D1   2   1    DX
+D2   1   2    DX
+EN   10  1    12  0  1
+GN1  0   2    15  0  1
+GN2  0   1    18  0  1
+*
+EREF  98 0    33  0  1
+EPLUS 97 0    99  0  1
+ENEG  51 0    50  0  1 
+*
+* VOLTAGE NOISE SOURCE WITH FLICKER NOISE
+*
+DN1  11  12   DEN
+DN2  12  13   DEN
+VN1  11   0   DC 2
+VN2  0   13   DC 2
+*
+* CURRENT NOISE SOURCE WITH FLICKER NOISE
+*
+DN3  14  15   DIN
+DN4  15  16   DIN
+VN3  14   0   DC 2
+VN4  0   16   DC 2
+*
+* SECOND CURRENT NOISE SOURCE
+*
+DN5  17  18   DIN
+DN6  18  19   DIN
+VN5  17   0   DC 2
+VN6  0   19   DC 2
+*
+* FIRST GAIN STAGE
+*
+R7   20 98     1
+G1   98 20     5  6  119.8
+D3   20 21     DX
+D4   22 20     DX
+E1   97 21     POLY(1) 97 33 -2.4 1
+E2   22 51     POLY(1) 33 51 -2.4 1
+*
+* GAIN STAGE & DOMINANT POLE AT 0.127 HZ
+*
+R8   23 98     1.253E9
+C3   23 98     1E-9
+G2   98 23     20 33  33.3E-6
+V1   97 24     1.8
+V2   25 51     1.8
+D5   23 24     DX
+D6   25 23     DX
+*
+* NEGATIVE ZERO AT -4MHZ
+*
+R9   26 27     1
+C4   26 27     -39.75E-9
+R10  27 98     1E-6
+E3   26 98     23 33  1E6
+*
+* COMMON-MODE GAIN NETWORK WITH ZERO AT 63 HZ
+*
+R13  30 31     1
+L2   31 98     2.52E-3
+G4   98 30     3  33  0.316E-6
+D7   30 97     DX
+D8   51 30     DX
+*
+* POLE AT 2 MHZ
+*
+R14  32 98     1
+C5   32 98     79.5E-9
+G5   98 32     27 33  1
+*
+* OUTPUT STAGE
+*
+R15  33 97     1
+R16  33 51     1
+GSY  99 50     POLY(1) 99 50 0.725E-3 0.0425E-3
+F1   34  0     V3  1
+F2   0  34     V4  1
+R17  34 99     400
+R18  34 50     400
+L3   34 39     2E-7
+G6   37 50     32 34  2.5E-3
+G7   38 50     34 32  2.5E-3
+G8   34 99     99 32  2.5E-3
+G9   50 34     32 50  2.5E-3
+V3   35 34     6.8
+V4   34 36     4.4
+D9   32 35     DX
+D10  36 32     DX
+D11  99 37     DX
+D12  99 38     DX
+D13  50 37     DY
+D14  50 38     DY
+*
+* MODELS USED
+*
+.MODEL QX NPN(BF=333.3E6)
+.MODEL DX   D(IS=1E-15)
+.MODEL DY   D(IS=1E-15 BV=50)
+.MODEL DEN  D(IS=1E-12, RS=14.61K, KF=2E-17, AF=1)
+.MODEL DIN  D(IS=1E-12, RS=7.55E-6, KF=3E-15, AF=1)
+.ENDS
+R102 U100V+ +5V 22 
+R101 -5V U100V- 22 
+R98 0 VU2bias+ 1K 
+R99 0 VU1bias+ 1K 
+C95 VU2bias+ 0 100pF 
+* C96 0 5 1uF 
+* C97 4 0 1uF 
+Cphotodiode 0 Vinput 0.9pF 
+C99 0 VU1bias+ 100pF 
+R25 Vout2 2 250 
+C24 Vout1 VU1in- 1pF 
+R24 VU1in- 1 150 
+* C21 0 3 1uF 
+Cc Vout2 VU2in- 1pF 
+Rc Vout1 VU2in- 10 
+RL 0 Vout2 50 
+.TEMP 0 25 50 75 100
+C12 2 0 1.5pF 
+C11 0 V2- .01uF 
+C10 V2+ 0 .01uF 
+R13 +5V V2+ 5 
+R12 V2- -5V 5 
+R26 2 VU2in- 150 
+R11 Vout2 VU2in- 180 
+XU2 VU2bias+ VU2in- V2+ V2- Vout2 AD8009an 
+XU1 VU1bias+ VU1in- V1+ V1- Vout1 AD8009an 
+***** AD8009 SPICE model       Rev B SMR/ADI 8-21-97
+
+* Copyright 1997 by Analog Devices, Inc.
+
+* Refer to "README.DOC" file for License Statement.  Use of this model
+* indicates your acceptance with the terms and provisions in the License Statement.
+
+* rev B of this model corrects a problem in the output stage that would not
+* correctly reflect the output current to the voltage supplies
+
+* This model will give typical performance characteristics
+* for the following parameters;
+
+*     closed loop gain and phase vs bandwidth
+*     output current and voltage limiting
+*     offset voltage (is static, will not vary with vcm)
+*     ibias (again, is static, will not vary with vcm)
+*     slew rate and step response performance
+*     (slew rate is based on 10-90% of step response)
+*     current on output will be reflected to the supplies 
+*     vnoise, referred to the input
+*     inoise, referred to the input
+
+*     distortion is not characterized
+
+* Node assignments
+*                non-inverting input
+*                | inverting input
+*                | | positive supply
+*                | | |  negative supply
+*                | | |  |  output
+*                | | |  |  |
+.SUBCKT AD8009an 1 2 99 50 28
+
+* input stage *
+
+q1 50 3 5 qp1
+q2 99 5 4 qn1
+q3 99 3 6 qn2
+q4 50 6 4 qp2
+i1 99 5 1.625e-3
+i2 6 50 1.625e-3
+cin1 1 98 2.6e-12
+cin2 2 98 1e-12
+v1 4 2 0
+
+* input error sources *
+
+eos 3 1 poly(1) 20 98 2e-3 1
+fbn 2 98 poly(1) vnoise3 50e-6 1e-3
+fbp 1 98 poly(1) vnoise3 50e-6 1e-3
+
+* slew limiting stage *
+
+fsl 98 16 v1 1
+dsl1 98 16 d1
+dsl2 16 98 d1
+dsl3 16 17 d1
+dsl4 17 16 d1
+rsl  17 18 0.22
+vsl  18 98 0
+
+* gain stage *
+
+f1 98 7 vsl 2
+rgain 7 98 2.5e5
+cgain 7 98 1.25e-12
+dcl1 7 8 d1
+dcl2 9 7 d1
+vcl1 99 8 1.83
+vcl2 9 50 1.83
+
+gcm 98 7 poly(2) 98 0 30 0 0 1e-5 1e-5
+
+* second pole *
+
+epole 14 98 7 98 1
+rpole 14 15 1
+cpole 15 98 2e-10
+
+* reference stage *
+
+eref 98 0 poly(2) 99 0 50 0 0 0.5 0.5 
+
+ecmref 30 0 poly(2) 1 0 2 0 0 0.5 0.5
+
+* vnoise stage *
+
+rnoise1 19 98 4.6e-3
+vnoise1 19 98 0
+vnoise2 21 98 0.53
+dnoise1 21 19 dn
+
+fnoise1 20 98 vnoise1 1
+rnoise2 20 98 1
+
+* inoise stage *
+
+rnoise3 22 98 8.18e-6
+vnoise3 22 98 0
+vnoise4 24 98 0.575
+dnoise2 24 22 dn
+
+fnoise2 23 98 vnoise3 1
+rnoise4 23 98 1
+
+* buffer stage *
+
+gbuf 98 13 15 98 1e-2
+rbuf 98 13 1e2
+
+* output current reflected to supplies *
+
+fcurr 98 40 voc 1
+vcur1 26 98 0
+vcur2 98 27 0
+dcur1 40 26 d1
+dcur2 27 40 d1
+
+* output stage *
+
+vo1 99 90 0
+vo2 91 50 0
+fout1 0 99 poly(2) vo1 vcur1 -9.27e-3 1 -1
+fout2 50 0 poly(2) vo2 vcur2 -9.27e-3 1 -1 
+gout1 90 10 13 99 0.5
+gout2 91 10 13 50 0.5
+rout1 10 90 2
+rout2 10 91 2
+voc 10 28 0
+rout3 28 98 1e6
+dcl3 13 11 d1
+dcl4 12 13 d1
+vcl3 11 10 -0.445
+vcl4 10 12 -0.445
+
+.model qp1 pnp()
+.model qp2 pnp()
+.model qn1 npn()
+.model qn2 npn()
+.model d1  d()
+.model dn  d(af=1 kf=1e-8)
+.ends
+R6 1 Vout1 250 
+C3 1 0 1.5pF 
+V3 VU1in- Vinput DC 0V 
+* .INCLUDE /home/sdb/OpticalReceiver/Simulation.cmd
+R5 -5V Vout1 1K 
+I1 0 Vinput AC 1 PWL (0ns 0mA 1nS 0mA 1.01nS 1mA 10nS 1mA 10.01nS 0mA 20nS 0mA 20.01nS .1mA 30nS .1mA 30.01nS 0mA)
+R4 V1- -5V 5 
+C2 0 V1- .01uF 
+V2 -5V 0 DC -5V
+R2 VU1in- Vout1 180 
+V1 +5V 0 DC 5V
+C1 V1+ 0 .01uF 
+R1 +5V V1+ 5 
+* When run, this SPICE file should output a square waveform
+* with a little overshoot
+.tran 0.05ns 40ns
+.plot Vout2
+
+.control
+codemodel analog.lib
+run
+.endc
+
+.END
diff --git a/examples/cider/bicmos/bicmos.lib b/examples/cider/bicmos/bicmos.lib
new file mode 100644
index 000000000..cc1eb20d9
--- /dev/null
+++ b/examples/cider/bicmos/bicmos.lib
@@ -0,0 +1,127 @@
+.MODEL M_NPN nbjt level=2
++ title TWO-DIMENSIONAL NUMERICAL POLYSILICON EMITTER BIPOLAR TRANSISTOR
++ * Since, we are only simulating half of a device, we double the unit width
++ * 1.0 um emitter length
++ options defw=2.0u
++ output dc.debug stat
++ 
++ *x.mesh w=2.5 n=5
++ x.mesh w=2.0  h.e=0.05 h.m=0.2 r=1.5
++ x.mesh w=0.5  h.s=0.05 h.m=0.1 r=1.5
++ 
++ y.mesh l=-0.2 n=1
++ y.mesh l= 0.0 n=5
++ y.mesh w=0.10 h.e=0.002 h.m=0.01  r=1.5
++ y.mesh w=0.15 h.s=0.002 h.m=0.01  r=1.5
++ y.mesh w=0.35 h.s=0.01  h.m=0.2   r=1.5
++ y.mesh w=0.40 h.e=0.05  h.m=0.2   r=1.5
++ y.mesh w=0.30 h.s=0.05  h.m=0.1   r=1.5
++
++ domain num=1 material=1 x.l=2.0 y.h=0.0
++ domain num=2 material=2 x.h=2.0 y.h=0.0
++ domain num=3 material=3 y.l=0.0
++ material num=1 polysilicon
++ material num=2 oxide
++ material num=3 silicon
++
++ elec num=1 x.l=0.0  x.h=0.0  y.l=1.1  y.h=1.3
++ elec num=2 x.l=0.0  x.h=0.5  y.l=0.0  y.h=0.0
++ elec num=3 x.l=2.0  x.h=3.0  y.l=-0.2 y.h=-0.2
++
++ doping gauss n.type conc=3e20 x.l=2.0 x.h=3.0 y.l=-0.2 y.h=0.0
++ + char.l=0.047 lat.rotate
++ doping gauss p.type conc=1e19 x.l=0.0 x.h=5.0 y.l=-0.2 y.h=0.0
++ + char.l=0.094 lat.rotate
++ doping unif  n.type conc=1e16 x.l=0.0 x.h=5.0 y.l=0.0 y.h=1.3
++ doping gauss n.type conc=5e19 x.l=0.0 x.h=5.0 y.l=1.3 y.h=1.3
++ + char.l=0.100 lat.rotate
++
++ method ac=direct itlim=10
++ models bgn srh auger conctau concmob fieldmob
+
+.MODEL M_NMOS_1 numos
++ output dc.debug stat
++ title 1.0um NMOS Device
++ 
++ x.mesh w=0.9 h.e=0.020 h.m=0.2 r=2.0
++ x.mesh w=0.2 h.e=0.005 h.m=0.02 r=2.0
++ x.mesh w=0.4 h.s=0.005 h.m=0.1 r=2.0
++ x.mesh w=0.4 h.e=0.005 h.m=0.1 r=2.0
++ x.mesh w=0.2 h.e=0.005 h.m=0.02 r=2.0
++ x.mesh w=0.9 h.s=0.020 h.m=0.2 r=2.0
++
++ y.mesh l=-.0200 n=1
++ y.mesh l=0.0 n=6
++ y.mesh w=0.15 h.s=0.0001 h.max=.02 r=2.0
++ y.mesh w=0.45 h.s=0.02 h.max=0.2 r=2.0
++ y.mesh w=1.40 h.s=0.20 h.max=0.4 r=2.0
++
++ region num=1 material=1 y.h=0.0
++ region num=2 material=2 y.l=0.0
++ interface dom=2 nei=1 x.l=1.0 x.h=2.0 layer.width=0.0
++ material num=1 oxide
++ material num=2 silicon
++
++ elec num=1 x.l=2.5 x.h=3.1	y.l=0.0 y.h=0.0
++ elec num=2 x.l=1.0  x.h=2.0	iy.l=1  iy.h=1
++ elec num=3 x.l=-0.1 x.h=0.5	y.l=0.0 y.h=0.0
++ elec num=4 x.l=-0.1 x.h=3.1   y.l=2.0 y.h=2.0
++
++ doping gauss p.type conc=1.0e17 x.l=-0.1 x.h=3.1 y.l=0.0
++ + char.l=0.30
++ doping unif p.type conc=5.0e15 x.l=-0.1 x.h=3.1 y.l=0.0 y.h=2.1
++ doping gauss n.type conc=4e17  x.l=-0.1 x.h=1.0 y.l=0.0 y.h=0.0
++ + char.l=0.16 lat.rotate ratio=0.65
++ doping gauss n.type conc=1e20  x.l=-0.1 x.h=0.95 y.l=0.0 y.h=0.08
++ + char.l=0.03 lat.rotate ratio=0.65
++ doping gauss n.type conc=4e17  x.l=2.0 x.h=3.1 y.l=0.0 y.h=0.0
++ + char.l=0.16 lat.rotate ratio=0.65
++ doping gauss n.type conc=1e20  x.l=2.05 x.h=3.1 y.l=0.0 y.h=0.08
++ + char.l=0.03 lat.rotate ratio=0.65
++
++ contact num=2 workf=4.10
++ models concmob fieldmob surfmob srh auger conctau bgn ^aval
++ method ac=direct itlim=10 onec
+
+.MODEL M_PMOS_1 numos
++ title 1.0um PMOS Device
++ 
++ x.mesh w=0.9 h.e=0.020 h.m=0.2 r=2.0
++ x.mesh w=0.2 h.e=0.005 h.m=0.02 r=2.0
++ x.mesh w=0.4 h.s=0.005 h.m=0.1 r=2.0
++ x.mesh w=0.4 h.e=0.005 h.m=0.1 r=2.0
++ x.mesh w=0.2 h.e=0.005 h.m=0.02 r=2.0
++ x.mesh w=0.9 h.s=0.020 h.m=0.2 r=2.0
++
++ y.mesh l=-.0200 n=1
++ y.mesh l=0.0 n=6
++ y.mesh w=0.15 h.s=0.0001 h.max=.02 r=2.0
++ y.mesh w=0.45 h.s=0.02 h.max=0.2 r=2.0
++ y.mesh w=1.40 h.s=0.20 h.max=0.4 r=2.0
++
++ region num=1 material=1 y.h=0.0
++ region num=2 material=2 y.l=0.0
++ interface dom=2 nei=1 x.l=1.0 x.h=2.0 layer.width=0.0
++ material num=1 oxide
++ material num=2 silicon
++
++ elec num=1 x.l=2.5 x.h=3.1	y.l=0.0 y.h=0.0
++ elec num=2 x.l=1.0  x.h=2.0	iy.l=1  iy.h=1
++ elec num=3 x.l=-0.1 x.h=0.5	y.l=0.0 y.h=0.0
++ elec num=4 x.l=-0.1 x.h=3.1   y.l=2.0 y.h=2.0
++
++ doping gauss n.type conc=1.0e17 x.l=-0.1 x.h=3.1 y.l=0.0
++ + char.l=0.30
++ doping unif n.type conc=5.0e15 x.l=-0.1 x.h=3.1 y.l=0.0 y.h=2.1
++ doping gauss p.type conc=4e17  x.l=-0.1 x.h=1.0 y.l=0.0 y.h=0.0
++ + char.l=0.16 lat.rotate ratio=0.65
++ doping gauss p.type conc=1e20  x.l=-0.1 x.h=0.95 y.l=0.0 y.h=0.08
++ + char.l=0.03 lat.rotate ratio=0.65
++ doping gauss p.type conc=4e17  x.l=2.0 x.h=3.1 y.l=0.0 y.h=0.0
++ + char.l=0.16 lat.rotate ratio=0.65
++ doping gauss p.type conc=1e20  x.l=2.05 x.h=3.1 y.l=0.0 y.h=0.08
++ + char.l=0.03 lat.rotate ratio=0.65
++
++ contact num=2 workf=5.29
++ models concmob fieldmob surfmob srh auger conctau bgn ^aval
++ method ac=direct itlim=10 onec
diff --git a/examples/cider/bicmos/bicmpd.cir b/examples/cider/bicmos/bicmpd.cir
new file mode 100644
index 000000000..8096b49b6
--- /dev/null
+++ b/examples/cider/bicmos/bicmpd.cir
@@ -0,0 +1,26 @@
+BiCMOS Pulldown Circuit
+
+VSS 2 0 0v
+
+VIN 3 2 0v (PULSE 0.0v 4.2v 0ns 1ns 1ns 9ns 20ns)
+
+M1  8 3 5 11 M_NMOS_1 W=4u L=1u
+VD  4 8 0v
+VBK 11 2 0v
+
+Q1  10 7 9   M_NPN AREA=8
+VC  4 10 0v
+VB  5 7 0v
+VE  9 2 0v
+
+CL  4 6 1pF
+VL  6 2 0v
+
+.IC V(10)=5.0v V(7)=0.0v 
+.TRAN 0.1ns 5ns 0ns 0.1ns
+.PLOT TRAN I(VIN)
+
+.include bicmos.lib
+
+.OPTIONS ACCT BYPASS=1
+.END
diff --git a/examples/cider/bjt/astable.cir b/examples/cider/bjt/astable.cir
new file mode 100644
index 000000000..bdb4a8a8f
--- /dev/null
+++ b/examples/cider/bjt/astable.cir
@@ -0,0 +1,34 @@
+Astable multivibrator
+
+vin 5 0 dc 0 pulse(0 5 0 1us 1us 100us 100us)
+vcc 6 0 5.0
+rc1 6 1 1k
+rc2 6 2 1k
+rb1 6 3 30k
+rb2 5 4 30k
+c1 1 4 150pf
+c2 2 3 150pf
+q1 1 3 0 qmod area = 100p
+q2 2 4 0 qmod area = 100p
+
+.option acct bypass=1
+.tran 0.05us 8us 0us 0.05us
+.print tran v(1) v(2) v(3) v(4)
+
+.model qmod nbjt level=1
++ x.mesh node=1  loc=0.0
++ x.mesh node=61 loc=3.0
++ region num=1 material=1
++ material num=1 silicon nbgnn=1e17 nbgnp=1e17
++ mobility material=1 concmod=sg fieldmod=sg
++ mobility material=1 elec major
++ mobility material=1 elec minor
++ mobility material=1 hole major
++ mobility material=1 hole minor
++ doping unif n.type conc=1e17 x.l=0.0 x.h=1.0
++ doping unif p.type conc=1e16 x.l=0.0 x.h=1.5
++ doping unif n.type conc=1e15 x.l=0.0 x.h=3.0
++ models bgnw srh conctau auger concmob fieldmob
++ options base.length=1.0 base.depth=1.25
+
+.end
diff --git a/examples/cider/bjt/colposc.cir b/examples/cider/bjt/colposc.cir
new file mode 100644
index 000000000..bd4d31fa5
--- /dev/null
+++ b/examples/cider/bjt/colposc.cir
@@ -0,0 +1,33 @@
+Colpitt's Oscillator Circuit
+
+r1 1 0 1
+q1 2 1 3 qmod area = 100p
+vcc 4 0 5 
+rl 4 2 750
+c1 2 3 500p
+c2 4 3 4500p
+l1 4 2 5uH
+re 3 6 4.65k
+vee 6 0 dc -15 pwl 0 -15 1e-9 -10 
+
+.tran 30n 12u
+.print tran v(2)
+
+.model qmod nbjt level=1
++ x.mesh node=1  loc=0.0
++ x.mesh node=61 loc=3.0
++ region num=1 material=1
++ material num=1 silicon nbgnn=1e17 nbgnp=1e17
++ mobility material=1 concmod=sg fieldmod=sg
++ mobility material=1 elec major
++ mobility material=1 elec minor
++ mobility material=1 hole major
++ mobility material=1 hole minor
++ doping unif n.type conc=1e17 x.l=0.0 x.h=1.0
++ doping unif p.type conc=1e16 x.l=0.0 x.h=1.5
++ doping unif n.type conc=1e15 x.l=0.0 x.h=3.0
++ models bgnw srh conctau auger concmob fieldmob
++ options base.length=1.0 base.depth=1.25
+
+.options acct bypass=1
+.end
diff --git a/examples/cider/bjt/ecp.cir b/examples/cider/bjt/ecp.cir
new file mode 100644
index 000000000..6fb2bda9b
--- /dev/null
+++ b/examples/cider/bjt/ecp.cir
@@ -0,0 +1,57 @@
+Emitter Coupled Pair
+
+VCC	1  0  5v
+VEE	2  0  0v
+RCP	1  11 10k
+RCN	1  21 10k
+VBBP	12 0  3v AC 1
+VBBN	22 0  3v
+IEE	13 2  0.1mA
+Q1	11 12 13 M_NPN AREA=8
+Q2	21 22 13 M_NPN AREA=8
+
+.DC VBBP 2.75v 3.25001v 10mv
+.PRINT V(21) V(11)
+
+.MODEL M_NPN nbjt level=2
++ title TWO-DIMENSIONAL NUMERICAL POLYSILICON EMITTER BIPOLAR TRANSISTOR
++ * Since, we are only simulating half of a device, we double the unit width
++ * 1.0 um emitter length
++ options defw=2.0u
++ 
++ *x.mesh w=2.5 n=5
++ x.mesh w=2.0  h.e=0.05 h.m=0.2 r=1.5
++ x.mesh w=0.5  h.s=0.05 h.m=0.1 r=1.5
++ 
++ y.mesh l=-0.2 n=1
++ y.mesh l= 0.0 n=5
++ y.mesh w=0.10 h.e=0.002 h.m=0.01  r=1.5
++ y.mesh w=0.15 h.s=0.002 h.m=0.01  r=1.5
++ y.mesh w=0.35 h.s=0.01  h.m=0.2   r=1.5
++ y.mesh w=0.40 h.e=0.05  h.m=0.2   r=1.5
++ y.mesh w=0.30 h.s=0.05  h.m=0.1   r=1.5
++
++ domain num=1 material=1 x.l=2.0 y.h=0.0
++ domain num=2 material=2 x.h=2.0 y.h=0.0
++ domain num=3 material=3 y.l=0.0
++ material num=1 polysilicon
++ material num=2 oxide
++ material num=3 silicon
++
++ elec num=1 x.l=0.0  x.h=0.0  y.l=1.1  y.h=1.3
++ elec num=2 x.l=0.0  x.h=0.5  y.l=0.0  y.h=0.0
++ elec num=3 x.l=2.0  x.h=3.0  y.l=-0.2 y.h=-0.2
++
++ doping gauss n.type conc=3e20 x.l=2.0 x.h=3.0 y.l=-0.2 y.h=0.0
++ + char.l=0.047 lat.rotate
++ doping gauss p.type conc=1e19 x.l=0.0 x.h=5.0 y.l=-0.2 y.h=0.0
++ + char.l=0.094 lat.rotate
++ doping unif  n.type conc=1e16 x.l=0.0 x.h=5.0 y.l=0.0 y.h=1.3
++ doping gauss n.type conc=5e19 x.l=0.0 x.h=5.0 y.l=1.3 y.h=1.3
++ + char.l=0.100 lat.rotate
++
++ method ac=direct itlim=10
++ models bgn srh auger conctau concmob fieldmob
+
+.OPTIONS ACCT BYPASS=1
+.END
diff --git a/examples/cider/bjt/invchain.cir b/examples/cider/bjt/invchain.cir
new file mode 100644
index 000000000..92c6fad8c
--- /dev/null
+++ b/examples/cider/bjt/invchain.cir
@@ -0,0 +1,38 @@
+4 Stage RTL Inverter Chain
+
+vin 1 0 dc 0v pwl 0ns 0v 1ns 5v
+vcc 12 0 dc 5.0v
+rc1 12 3 2.5k
+rb1 1 2 8k
+q1 3 2 0 qmod area = 100p
+rb2 3 4 8k
+rc2 12 5 2.5k
+q2 5 4 0 qmod area = 100p
+rb3 5 6 8k
+rc3 12 7 2.5k
+q3 7 6 0 qmod area = 100p
+rb4 7 8 8k
+rc4 12 9 2.5k
+q4 9 8 0 qmod area = 100p
+
+.print tran v(3) v(5) v(9)
+.tran 1e-9 10e-9
+
+.model qmod nbjt level=1
++ x.mesh node=1  loc=0.0
++ x.mesh node=61 loc=3.0
++ region num=1 material=1
++ material num=1 silicon nbgnn=1e17 nbgnp=1e17
++ mobility material=1 concmod=sg fieldmod=sg
++ mobility material=1 elec major
++ mobility material=1 elec minor
++ mobility material=1 hole major
++ mobility material=1 hole minor
++ doping unif n.type conc=1e17 x.l=0.0 x.h=1.0
++ doping unif p.type conc=1e16 x.l=0.0 x.h=1.5
++ doping unif n.type conc=1e15 x.l=0.0 x.h=3.0
++ models bgnw srh conctau auger concmob fieldmob
++ options base.length=1.0 base.depth=1.25
+
+.option acct bypass=1
+.end
diff --git a/examples/cider/bjt/meclgate.cir b/examples/cider/bjt/meclgate.cir
new file mode 100644
index 000000000..33542d5d0
--- /dev/null
+++ b/examples/cider/bjt/meclgate.cir
@@ -0,0 +1,74 @@
+Motorola MECL III ECL gate
+*.dc vin -2.0 0 0.02
+.tran 0.2ns 20ns
+vee 22 0 -6.0
+vin 1 0 pulse -0.8 -1.8 0.2ns 0.2ns 0.2ns 10ns 20ns
+rs 1 2 50
+q1 4 2 6 qmod area = 100p
+q2 4 3 6 qmod area = 100p
+q3 5 7 6 qmod area = 100p
+q4 0 8 7 qmod area = 100p
+
+d1 8 9 dmod
+d2 9 10 dmod
+
+rp1 3 22 50k
+rc1 0 4 100
+rc2 0 5 112
+re 6 22 380
+r1 7 22 2k
+r2 0 8 350
+r3 10 22 1958
+
+q5 0 5 11 qmod area = 100p
+q6 0 4 12 qmod area = 100p
+
+rp2 11 22 560
+rp3 12 22 560
+
+q7 13 12 15 qmod area = 100p
+q8 14 16 15 qmod area = 100p
+
+re2 15 22 380
+rc3 0 13 100
+rc4 0 14 112
+
+q9 0 17 16 qmod area = 100p
+
+r4 16 22 2k
+r5 0 17 350
+d3 17 18 dmod
+d4 18 19 dmod
+r6 19 22 1958
+
+q10 0 14 20 qmod area = 100p
+q11 0 13 21 qmod area = 100p
+
+rp4 20 22 560
+rp5 21 22 560
+
+.model dmod d rs=40 tt=0.1ns cjo=0.9pf n=1 is=1e-14 eg=1.11 vj=0.8 m=0.5
+
+.model qmod nbjt level=1
++ x.mesh node=1  loc=0.0
++ x.mesh node=10 loc=0.9
++ x.mesh node=20 loc=1.1
++ x.mesh node=30 loc=1.4
++ x.mesh node=40 loc=1.6
++ x.mesh node=61 loc=3.0
++ region num=1 material=1
++ material num=1 silicon nbgnn=1e17 nbgnp=1e17
++ mobility material=1 concmod=sg fieldmod=sg
++ mobility material=1 elec major
++ mobility material=1 elec minor
++ mobility material=1 hole major
++ mobility material=1 hole minor
++ doping unif n.type conc=1e17 x.l=0.0 x.h=1.0
++ doping unif p.type conc=1e16 x.l=0.0 x.h=1.5
++ doping unif n.type conc=1e15 x.l=0.0 x.h=3.0
++ models bgnw srh conctau auger concmob fieldmob
++ options base.length=1.0 base.depth=1.25
+
+.options acct bypass=1
+.print tran v(12) v(21)
+.end
diff --git a/examples/cider/bjt/pebjt.lib b/examples/cider/bjt/pebjt.lib
new file mode 100644
index 000000000..afbdb36c5
--- /dev/null
+++ b/examples/cider/bjt/pebjt.lib
@@ -0,0 +1,71 @@
+**
+* Numerical models for a
+* polysilicon emitter complementary bipolar process.
+* The default device size is 1um by 10um (LxW)
+**
+
+.model M_NPN nbjt level=1
++ title One-Dimensional Numerical Bipolar
++ options base.depth=0.15 base.area=0.1 base.length=1.0 defa=10p
++ x.mesh loc=-0.2 n=1
++ x.mesh loc=0.0  n=51
++ x.mesh wid=0.15 h.e=0.0001 h.m=.004 r=1.2
++ x.mesh wid=1.15 h.s=0.0001 h.m=.004 r=1.2
++ domain   num=1 material=1 x.l=0.0
++ domain   num=2 material=2 x.h=0.0
++ material num=1 silicon
++ mobility mat=1 concmod=ct fieldmod=ct
++ material num=2 polysilicon
++ mobility mat=2 concmod=ct fieldmod=ct
++ doping gauss n.type conc=3e20  x.l=-0.2 x.h=0.0 char.len=0.047
++ doping gauss p.type conc=5e18  x.l=-0.2 x.h=0.0 char.len=0.100
++ doping unif  n.type conc=1e16  x.l=0.0 x.h=1.3
++ doping gauss n.type conc=5e19  x.l=1.3 x.h=1.3 char.len=0.100
++ models bgn srh auger conctau concmob fieldmob ^aval
++ method devtol=1e-12 ac=direct itlim=15
+
+.model M_NPSUB numd level=1
++ title One-Dimensional Numerical Collector-Substrate Diode
++ options defa=10p
++ x.mesh loc=1.3  n=1
++ x.mesh loc=2.0  n=101
++ domain   num=1 material=1
++ material num=1 silicon
++ mobility mat=1 concmod=ct fieldmod=ct
++ doping gauss n.type conc=5e19  x.l=1.3 x.h=1.3 char.len=0.100
++ doping unif  p.type conc=1e15  x.l=0.0 x.h=2.0
++ models bgn srh auger conctau concmob fieldmob ^aval
++ method devtol=1e-12 itlim=10
+
+.model M_PNP nbjt level=1
++ title One-Dimensional Numerical Bipolar
++ options base.depth=0.2 base.area=0.1 base.length=1.0 defa=10p
++ x.mesh loc=-0.2 n=1
++ x.mesh loc=0.0  n=51
++ x.mesh wid=0.20 h.e=0.0001 h.m=.004 r=1.2
++ x.mesh wid=1.10 h.s=0.0001 h.m=.004 r=1.2
++ domain   num=1 material=1 x.l=0.0
++ domain   num=2 material=2 x.h=0.0
++ material num=1 silicon
++ mobility mat=1 concmod=ct fieldmod=ct
++ material num=2 polysilicon
++ mobility mat=2 concmod=ct fieldmod=ct
++ doping gauss p.type conc=3e20  x.l=-0.2 x.h=0.0 char.len=0.047
++ doping gauss n.type conc=5e17  x.l=-0.2 x.h=0.0 char.len=0.200
++ doping unif  p.type conc=1e16  x.l=0.0 x.h=1.3
++ doping gauss p.type conc=5e19  x.l=1.3 x.h=1.3 char.len=0.100
++ models bgn srh auger conctau concmob fieldmob ^aval
++ method devtol=1e-12 ac=direct itlim=15
+
+.model M_PNSUB numd level=1
++ title One-Dimensional Numerical Collector-Substrate Diode
++ options defa=10p
++ x.mesh loc=1.3  n=1
++ x.mesh loc=2.0  n=101
++ domain   num=1 material=1
++ material num=1 silicon
++ mobility mat=1 concmod=ct fieldmod=ct
++ doping gauss p.type conc=5e19  x.l=1.3 x.h=1.3 char.len=0.100
++ doping unif  n.type conc=1e15  x.l=0.0 x.h=2.0
++ models bgn srh auger conctau concmob fieldmob ^aval
++ method devtol=1e-12 itlim=10
diff --git a/examples/cider/bjt/pz.cir b/examples/cider/bjt/pz.cir
new file mode 100644
index 000000000..ad3ee6757
--- /dev/null
+++ b/examples/cider/bjt/pz.cir
@@ -0,0 +1,16 @@
+PZ Analysis of a Common Emitter Amplifier
+
+Vcc 1 0 5v
+Vee 2 0 0v
+
+Vin 3 0 0.7838 AC 1
+RS  3 4 1K
+Q1  5 4 2 M_NPN AREA=4 SAVE
+RL  1 5 2.5k
+CL  5 0 0.1pF
+
+.INCLUDE pebjt.lib
+
+.PZ 3 0 5 0 vol pz
+
+.END
diff --git a/examples/cider/bjt/rtlinv.cir b/examples/cider/bjt/rtlinv.cir
new file mode 100644
index 000000000..f45eb9837
--- /dev/null
+++ b/examples/cider/bjt/rtlinv.cir
@@ -0,0 +1,29 @@
+RTL inverter
+
+vin 1 0 dc 1 pwl 0 4 1ns 0
+vcc 12 0 dc 5.0
+rc1 12 3 2.5k
+rb1 1 2 8k
+q1 3 2 0 qmod area = 100p
+
+.option acct bypass=1
+.tran 0.5n 5n
+.print tran v(2) v(3)
+
+.model qmod nbjt level=1
++ x.mesh node=1  loc=0.0
++ x.mesh node=61 loc=3.0
++ region num=1 material=1
++ material num=1 silicon nbgnn=1e17 nbgnp=1e17
++ mobility material=1 concmod=sg fieldmod=sg
++ mobility material=1 elec major
++ mobility material=1 elec minor
++ mobility material=1 hole major
++ mobility material=1 hole minor
++ doping unif n.type conc=1e17 x.l=0.0 x.h=1.0
++ doping unif p.type conc=1e16 x.l=0.0 x.h=1.5
++ doping unif n.type conc=1e15 x.l=0.0 x.h=3.0
++ models bgnw srh conctau auger concmob fieldmob
++ options base.length=1.0 base.depth=1.25
+
+.end
diff --git a/examples/cider/bjt/vco.cir b/examples/cider/bjt/vco.cir
new file mode 100644
index 000000000..d1b1a0589
--- /dev/null
+++ b/examples/cider/bjt/vco.cir
@@ -0,0 +1,45 @@
+Voltage controlled oscillator
+
+rc1 7 5 1k
+rc2 7 6 1k
+
+q5 7 7 5 qmod area = 100p
+q6 7 7 6 qmod area = 100p
+
+q3 7 5 2 qmod area = 100p
+q4 7 6 1 qmod area = 100p
+
+ib1 2 0 .5ma
+ib2 1 0 .5ma
+cb1 2 0 1pf
+cb2 1 0 1pf
+
+q1 5 1 3 qmod area = 100p
+q2 6 2 4 qmod area = 100p
+
+c1 3 4 .1uf 
+
+is1 3 0 dc 2.5ma pulse 2.5ma 0.5ma 0 1us 1us 50ms
+is2 4 0 1ma
+vcc 7 0 10
+
+.model qmod nbjt level=1
++ x.mesh node=1  loc=0.0
++ x.mesh node=61 loc=3.0
++ region num=1 material=1
++ material num=1 silicon nbgnn=1e17 nbgnp=1e17
++ mobility material=1 concmod=sg fieldmod=sg
++ mobility material=1 elec major
++ mobility material=1 elec minor
++ mobility material=1 hole major
++ mobility material=1 hole minor
++ doping unif n.type conc=1e17 x.l=0.0 x.h=1.0
++ doping unif p.type conc=1e16 x.l=0.0 x.h=1.5
++ doping unif n.type conc=1e15 x.l=0.0 x.h=3.0
++ models bgnw srh conctau auger concmob fieldmob
++ options base.length=1.0 base.depth=1.25
+
+.option acct bypass=1 
+.tran 3us 600us 0 3us
+.print tran v(4)
+.end
diff --git a/examples/cider/diode/diode.cir b/examples/cider/diode/diode.cir
new file mode 100644
index 000000000..e0ace324f
--- /dev/null
+++ b/examples/cider/diode/diode.cir
@@ -0,0 +1,35 @@
+One-Dimensional Diode Simulation
+
+* Several simulations are performed by this file.
+* They are:
+*   1. An operating point at 0.7v forward bias.
+*   2. An ac analysis at 0.7v forward bias.
+*   3. The forward and reverse bias characteristics from -3v to 2v.
+
+Vpp 1 0 0.7v (PWL 0ns 3.0v 0.01ns -6.0v) (AC 1v)
+Vnn 2 0 0v
+D1  1 2 M_PN AREA=100
+
+.model M_PN numd level=1
++ ***************************************
++ *** One-Dimensional Numerical Diode ***
++ ***************************************
++ options defa=1p
++ x.mesh loc=0.0 n=1
++ x.mesh loc=1.3 n=201
++ domain   num=1 material=1
++ material num=1 silicon
++ mobility mat=1 concmod=ct fieldmod=ct
++ doping gauss p.type conc=1e20 x.l=0.0  x.h=0.0 char.l=0.100
++ doping unif  n.type conc=1e16 x.l=0.0  x.h=1.3
++ doping gauss n.type conc=5e19 x.l=1.3  x.h=1.3 char.l=0.100 
++ models bgn aval srh auger conctau concmob fieldmob
++ method ac=direct
+
+.option acct bypass=0 abstol=1e-18 itl2=100
+.op
+.ac dec 10 100kHz 10gHz
+.dc Vpp -3.0v 2.0001v 50mv
+.print i(Vpp)
+
+.END
diff --git a/examples/cider/diode/diotran.cir b/examples/cider/diode/diotran.cir
new file mode 100644
index 000000000..110d2550f
--- /dev/null
+++ b/examples/cider/diode/diotran.cir
@@ -0,0 +1,31 @@
+Diode Reverse Recovery
+
+* This file simulates reverse recovery of a diode as it switched from an
+* on to off state.
+
+Vpp 1 0 0.7v (PWL 0ns 3.0v 0.1ns 3.0v 0.11ns -6.0v) (AC 1v)
+Vnn 2 0 0v
+R1  1 3 1k
+D1  3 2 M_PN area=100
+
+.MODEL M_PN numd level=1
++ ***************************************
++ *** One-Dimensional Numerical Diode ***
++ ***************************************
++ options defa=1p
++ x.mesh loc=0.0 n=1
++ x.mesh loc=1.3 n=201
++ domain   num=1 material=1
++ material num=1 silicon
++ mobility mat=1 concmod=ct fieldmod=ct
++ doping gauss p.type conc=3e20 x.l=0.0  x.h=0.0 char.l=0.100
++ doping unif  n.type conc=1e16 x.l=0.0  x.h=1.3
++ doping gauss n.type conc=5e19 x.l=1.3  x.h=1.3 char.l=0.100 
++ models bgn aval srh auger conctau concmob fieldmob
++ method ac=direct
+
+.option acct bypass=1 abstol=1e-15 itl2=100
+.tran 0.001ns 1.0ns
+.print i(Vpp)
+
+.END
diff --git a/examples/cider/diode/pindiode.cir b/examples/cider/diode/pindiode.cir
new file mode 100644
index 000000000..1eb18b421
--- /dev/null
+++ b/examples/cider/diode/pindiode.cir
@@ -0,0 +1,42 @@
+TWO-DIMENSIONAL PIN-DIODE CIRCUIT
+
+VIN 1 0 0.0v (PWL 0ns 0.8v 1ns -50.0v)
+L1  1 2 0.5uH
+VD  2 3 0.0v
+D1  3 0 M_PIN AREA=200 IC.FILE="OP.0.d1"
+VRC 2 4 0.0v
+R1  4 5 100
+C1  5 0 1.0nF
+
+.MODEL M_PIN NUMD LEVEL=2
++ options defw=1000u
++ x.mesh n=1 l=0.0
++ x.mesh n=2 l=0.2
++ x.mesh n=4 l=0.4
++ x.mesh n=8 l=0.6
++ x.mesh n=13 l=1.0
++
++ y.mesh n=1 l=0.0
++ y.mesh n=9 l=4.0
++ y.mesh n=24 l=10.0
++ y.mesh n=29 l=15.0
++ y.mesh n=34 l=20.0
++
++ domain num=1 material=1
++ material num=1 silicon tn=20ns tp=20ns
++
++ electrode num=1 x.l=0.6 x.h=1.0 y.h=0.0
++ electrode num=2 y.l=20.0
++
++ doping gauss p.type conc=1.0e20 char.len=1.076 x.l=0.75 x.h=1.1 y.h=0.0
++ + lat.rotate ratio=0.1
++ doping unif  n.type conc=1.0e14
++ doping gauss n.type conc=1.0e20 char.len=1.614 x.l=-0.1 x.h=1.1 y.l=20.0
++
++ models bgn srh auger conctau concmob fieldmob
+
+.OPTION ACCT BYPASS=1
+.TRAN 1NS 100NS
+.PRINT TRAN v(3) I(VIN)
+
+.END
diff --git a/examples/cider/jfet/jfet.cir b/examples/cider/jfet/jfet.cir
new file mode 100644
index 000000000..e3f005365
--- /dev/null
+++ b/examples/cider/jfet/jfet.cir
@@ -0,0 +1,36 @@
+Two-dimensional Junction Field-Effect Transistor (JFET)
+
+VDD 1 0  0.5V
+VGG 2 0 -1.0v AC 1V
+VSS 3 0  0.0V
+QJ1 1 2 3 M_NJF AREA=1
+
+.MODEL M_NJF NBJT LEVEL=2
++ options jfet defw=10.0um
++ output dc.debug phin phip equ.psi vac.psi
++ x.mesh w=0.2 h.e=0.001 r=1.8
++ x.mesh w=0.8 h.s=0.001 h.m=0.1 r=2.0
++ x.mesh w=0.8 h.e=0.001 h.m=0.1 r=2.0
++ x.mesh w=0.2 h.s=0.001 r=1.8
++ y.mesh w=0.2 h.e=0.01  r=1.8
++ y.mesh w=0.8 h.s=0.01  h.m=0.1  r=1.8
++
++ domain num=1 mat=1 
++ material num=1 silicon
++ 
++ elec num=1 x.l=0.0 x.h=0.0 y.l=0.0 y.h=1.0
++ elec num=2 x.l=0.5 x.h=1.5 y.l=0.0 y.h=0.0
++ elec num=3 x.l=2.0 x.h=2.0 y.l=0.0 y.h=1.0
++
++ doping unif n.type conc=3.0e15
++ doping unif p.type conc=2.0e17 x.l=0.2 x.h=1.8 y.h=0.2
++
++ models bgn srh auger conctau concmob fieldmob ^aval
+
+.option acct bypass=1 temp=27
+*.op
+.dc vgg 0.0 -2.0001 -0.1
+*.ac dec 10 1k 100g
+.print i(vnn)
+
+.end
diff --git a/examples/cider/mos/bootinv.cir b/examples/cider/mos/bootinv.cir
new file mode 100644
index 000000000..4c2ea40db
--- /dev/null
+++ b/examples/cider/mos/bootinv.cir
@@ -0,0 +1,59 @@
+NMOS Enhancement-Load Bootstrap Inverter
+
+Vdd 1 0 5.0v
+Vss 2 0 0.0v
+
+Vin 5 0 0.0v PWL (0.0ns 5.0v) (1ns 0.0v) (10ns 0.0v) (11ns 5.0v)
++ (20ns 5.0v) (21ns 0.0v) (30ns 0.0v) (31ns 5.0v)
+M1  1 1 3 2 M_NMOS w=5u
+M2  1 3 4 4 M_NMOS w=5u
+M3  4 5 2 2 M_NMOS w=5u
+CL  4 0 0.1pf
+CB  3 4 0.1pf
+
+.model M_NMOS numos
++ x.mesh l=0.0 n=1
++ x.mesh l=0.6 n=4
++ x.mesh l=0.7 n=5
++ x.mesh l=1.0 n=7
++ x.mesh l=1.2 n=11
++ x.mesh l=3.2 n=21
++ x.mesh l=3.4 n=25
++ x.mesh l=3.7 n=27
++ x.mesh l=3.8 n=28
++ x.mesh l=4.4 n=31
++
++ y.mesh l=-.05 n=1
++ y.mesh l=0.0  n=5
++ y.mesh l=.05  n=9
++ y.mesh l=0.3  n=14
++ y.mesh l=2.0  n=19
++
++ region num=1 material=1 y.l=0.0
++ material num=1 silicon
++ mobility material=1 concmod=sg fieldmod=sg
++ mobility material=1 init elec major
++ mobility material=1 init elec minor
++ mobility material=1 init hole major
++ mobility material=1 init hole minor
++
++ region num=2 material=2 y.h=0.0 x.l=0.7 x.h=3.7
++ material num=2 oxide
++
++ elec num=1 x.l=3.8 x.h=4.4	y.l=0.0 y.h=0.0
++ elec num=2 x.l=0.7 x.h=3.7	iy.l=1  iy.h=1
++ elec num=3 x.l=0.0 x.h=0.6	y.l=0.0 y.h=0.0
++ elec num=4 x.l=0.0 x.h=4.4	y.l=2.0 y.h=2.0
++
++ doping unif p.type conc=2.5e16 x.l=0.0 x.h=4.4  y.l=0.0 y.h=2.0
++ doping unif p.type conc=1e16   x.l=0.0 x.h=4.4  y.l=0.0 y.h=0.05
++ doping unif n.type conc=1e20   x.l=0.0 x.h=1.1  y.l=0.0 y.h=0.2
++ doping unif n.type conc=1e20   x.l=3.3 x.h=4.4  y.l=0.0 y.h=0.2
++
++ models concmob fieldmob
++ method ac=direct onec
+
+.tran 0.2ns 40ns
+.print v(4)
+.options acct bypass=1 method=gear
+.end
diff --git a/examples/cider/mos/charge.cir b/examples/cider/mos/charge.cir
new file mode 100644
index 000000000..845a14a84
--- /dev/null
+++ b/examples/cider/mos/charge.cir
@@ -0,0 +1,57 @@
+MOS charge pump
+
+vin 4 0 dc 0v pulse 0 5 15ns 5ns 5ns 50ns 100ns
+vdd 5 6 dc 0v pulse 0 5 25ns 5ns 5ns 50ns 100ns
+vbb 0 7 dc 0v pulse 0 5  0ns 5ns 5ns 50ns 100ns
+rd 6 2 10k
+m1 5 4 3 7 mmod w=100um
+vs 3 2 0
+vc 2 1 0
+c2 1 0 10pf
+
+.ic v(3)=1.0
+.tran 2ns 200ns
+.options acct bypass=1
+.print tran v(1) v(2)
+
+.model mmod numos
++ x.mesh n=1 l=0
++ x.mesh n=3 l=0.4
++ x.mesh n=7 l=0.6
++ x.mesh n=15 l=1.4
++ x.mesh n=19 l=1.6
++ x.mesh n=21 l=2.0
++
++ y.mesh n=1 l=0
++ y.mesh n=4 l=0.015
++ y.mesh n=8 l=0.05
++ y.mesh n=12 l=0.25
++ y.mesh n=14 l=0.35
++ y.mesh n=17 l=0.5
++ y.mesh n=21 l=1.0
++
++ region num=1 material=1 y.l=0.015
++ material num=1 silicon
++ mobility material=1 concmod=sg fieldmod=sg
++ mobility material=1 elec major
++ mobility material=1 elec minor
++ mobility material=1 hole major
++ mobility material=1 hole minor
++
++ region num=2 material=2 y.h=0.015 x.l=0.5 x.h=1.5
++ material num=2 oxide
++
++ elec num=1 ix.l=18 ix.h=21   iy.l=4  iy.h=4
++ elec num=2 ix.l=5  ix.h=17   iy.l=1  iy.h=1
++ elec num=3 ix.l=1  ix.h=4    iy.l=4  iy.h=4
++ elec num=4 ix.l=1  ix.h=21   iy.l=21 iy.h=21
++
++ doping unif n.type conc=1e18   x.l=0.0 x.h=0.5 y.l=0.015 y.h=0.25
++ doping unif n.type conc=1e18   x.l=1.5 x.h=2.0 y.l=0.015 y.h=0.25
++ doping unif p.type conc=1e15   x.l=0.0 x.h=2.0 y.l=0.015 y.h=1.0
++ doping unif p.type conc=1.3e17 x.l=0.5 x.h=1.5 y.l=0.015 y.h=0.05
++
++ models concmob fieldmob
++ method onec
+
+.end
diff --git a/examples/cider/mos/cmosinv.cir b/examples/cider/mos/cmosinv.cir
new file mode 100644
index 000000000..8f153cc7e
--- /dev/null
+++ b/examples/cider/mos/cmosinv.cir
@@ -0,0 +1,115 @@
+CMOS Inverter
+
+Vdd 1 0 5.0v
+Vss 2 0 0.0v
+
+X1 1 2 3 4 INV
+
+Vin 3 0 2.5v
+
+.SUBCKT INV 1   2   3   4
+*           Vdd Vss Vin Vout
+M1  14 13 15 16 M_PMOS w=6.0u
+M2  24 23 25 26 M_NMOS w=3.0u
+
+Vgp 3 13 0.0v
+Vdp 4 14 0.0v
+Vsp 1 15 0.0v
+Vbp 1 16 0.0v
+
+Vgn 3 23 0.0v
+Vdn 4 24 0.0v
+Vsn 2 25 0.0v
+Vbn 2 26 0.0v
+.ENDS INV
+
+.model M_NMOS numos
++ x.mesh l=0.0 n=1
++ x.mesh l=0.6 n=4
++ x.mesh l=0.7 n=5
++ x.mesh l=1.0 n=7
++ x.mesh l=1.2 n=11
++ x.mesh l=3.2 n=21
++ x.mesh l=3.4 n=25
++ x.mesh l=3.7 n=27
++ x.mesh l=3.8 n=28
++ x.mesh l=4.4 n=31
++
++ y.mesh l=-.05 n=1
++ y.mesh l=0.0  n=5
++ y.mesh l=.05  n=9
++ y.mesh l=0.3  n=14
++ y.mesh l=2.0  n=19
++
++ region num=1 material=1 y.l=0.0
++ material num=1 silicon
++ mobility material=1 concmod=sg fieldmod=sg
++ mobility material=1 elec major
++ mobility material=1 elec minor
++ mobility material=1 hole major
++ mobility material=1 hole minor
++
++ region num=2 material=2 y.h=0.0 x.l=0.7 x.h=3.7
++ material num=2 oxide
++
++ elec num=1 x.l=3.8 x.h=4.4	y.l=0.0 y.h=0.0
++ elec num=2 x.l=0.7 x.h=3.7	iy.l=1  iy.h=1
++ elec num=3 x.l=0.0 x.h=0.6	y.l=0.0 y.h=0.0
++ elec num=4 x.l=0.0 x.h=4.4	y.l=2.0 y.h=2.0
++
++ doping unif p.type conc=2.5e16 x.l=0.0 x.h=4.4  y.l=0.0 y.h=2.0
++ doping unif p.type conc=1e16   x.l=0.0 x.h=4.4  y.l=0.0 y.h=0.05
++ doping unif n.type conc=1e20   x.l=0.0 x.h=1.1  y.l=0.0 y.h=0.2
++ doping unif n.type conc=1e20   x.l=3.3 x.h=4.4  y.l=0.0 y.h=0.2
++
++ models concmob fieldmob bgn srh conctau
++ method ac=direct onec
+
+.model M_PMOS numos
++ x.mesh l=0.0 n=1
++ x.mesh l=0.6 n=4
++ x.mesh l=0.7 n=5
++ x.mesh l=1.0 n=7
++ x.mesh l=1.2 n=11
++ x.mesh l=3.2 n=21
++ x.mesh l=3.4 n=25
++ x.mesh l=3.7 n=27
++ x.mesh l=3.8 n=28
++ x.mesh l=4.4 n=31
++
++ y.mesh l=-.05 n=1
++ y.mesh l=0.0  n=5
++ y.mesh l=.05  n=9
++ y.mesh l=0.3  n=14
++ y.mesh l=2.0  n=19
++
++ region num=1 material=1 y.l=0.0
++ material num=1 silicon
++ mobility material=1 concmod=sg fieldmod=sg
++ mobility material=1 elec major
++ mobility material=1 elec minor
++ mobility material=1 hole major
++ mobility material=1 hole minor
++
++ region num=2 material=2 y.h=0.0 x.l=0.7 x.h=3.7
++ material num=2 oxide
++
++ elec num=1 x.l=3.8 x.h=4.4	y.l=0.0 y.h=0.0
++ elec num=2 x.l=0.7 x.h=3.7	iy.l=1  iy.h=1
++ elec num=3 x.l=0.0 x.h=0.6	y.l=0.0 y.h=0.0
++ elec num=4 x.l=0.0 x.h=4.4	y.l=2.0 y.h=2.0
++
++ doping unif n.type conc=1e16   x.l=0.0 x.h=4.4  y.l=0.0 y.h=2.0
++ doping unif p.type conc=3e16   x.l=0.0 x.h=4.4  y.l=0.0 y.h=0.05
++ doping unif p.type conc=1e20   x.l=0.0 x.h=1.1  y.l=0.0 y.h=0.2
++ doping unif p.type conc=1e20   x.l=3.3 x.h=4.4  y.l=0.0 y.h=0.2
++
++ models concmob fieldmob bgn srh conctau
++ method ac=direct onec
+
+*.tran 0.1ns 5ns
+*.op
+.dc Vin 0.0v 5.001v 0.05v
+.print v(4)
+.options acct bypass=1 method=gear
+.end
diff --git a/examples/cider/mos/nmosinv.cir b/examples/cider/mos/nmosinv.cir
new file mode 100644
index 000000000..ac49c7549
--- /dev/null
+++ b/examples/cider/mos/nmosinv.cir
@@ -0,0 +1,55 @@
+Resistive load NMOS inverter
+vin 1 0 pwl 0 0.0 2ns 5
+vdd 3 0 dc 5.0
+rd 3 2 2.5k
+m1 2 1 4 5 mmod w=10um
+cl 2 0 2pf
+vb 5 0 0
+vs 4 0 0
+
+.model mmod numos
++ x.mesh l=0.0 n=1
++ x.mesh l=0.6 n=4
++ x.mesh l=0.7 n=5
++ x.mesh l=1.0 n=7
++ x.mesh l=1.2 n=11
++ x.mesh l=3.2 n=21
++ x.mesh l=3.4 n=25
++ x.mesh l=3.7 n=27
++ x.mesh l=3.8 n=28
++ x.mesh l=4.4 n=31
++
++ y.mesh l=-.05 n=1
++ y.mesh l=0.0  n=5
++ y.mesh l=.05  n=9
++ y.mesh l=0.3  n=14
++ y.mesh l=2.0  n=19
++
++ region num=1 material=1 y.l=0.0
++ material num=1 silicon
++ mobility material=1 concmod=sg fieldmod=sg
++ mobility material=1 elec major
++ mobility material=1 elec minor
++ mobility material=1 hole major
++ mobility material=1 hole minor
++
++ region num=2 material=2 y.h=0.0 x.l=0.7 x.h=3.7
++ material num=2 oxide
++
++ elec num=1 x.l=3.8 x.h=4.4	y.l=0.0 y.h=0.0
++ elec num=2 x.l=0.7 x.h=3.7	iy.l=1  iy.h=1
++ elec num=3 x.l=0.0 x.h=0.6	y.l=0.0 y.h=0.0
++ elec num=4 x.l=0.0 x.h=4.4	y.l=2.0 y.h=2.0
++
++ doping unif p.type conc=2.5e16 x.l=0.0 x.h=4.4  y.l=0.0 y.h=2.0
++ doping unif p.type conc=1e16   x.l=0.0 x.h=4.4  y.l=0.0 y.h=0.05
++ doping unif n.type conc=1e20   x.l=0.0 x.h=1.1  y.l=0.0 y.h=0.2
++ doping unif n.type conc=1e20   x.l=3.3 x.h=4.4  y.l=0.0 y.h=0.2
++
++ models concmob fieldmob
++ method ac=direct onec
+
+.tran 0.2ns 30ns
+.options acct bypass=1
+.print tran v(1) v(2)
+.end
diff --git a/examples/cider/mos/pass.cir b/examples/cider/mos/pass.cir
new file mode 100644
index 000000000..a58c8a5f8
--- /dev/null
+++ b/examples/cider/mos/pass.cir
@@ -0,0 +1,59 @@
+Turnoff transient of pass transistor
+
+M1 11 2 3 4 mmod w=20um
+Cs 1 0 6.0pF
+Cl 3 0 6.0pF
+R1 3 6 200k
+Vin 6 0 dc 0
+Vdrn 1 11 dc 0
+Vg 2 0 dc 5 pwl 0 5 0.1n 0 1 0
+Vb 4 0 dc 0.0
+
+.tran 0.05ns 0.2ns 0.0ns 0.05ns
+.print tran v(1) i(Vdrn)
+.ic v(1)=0 v(3)=0
+.option acct bypass=1
+
+.model mmod numos
++ x.mesh l=0.0 n=1
++ x.mesh l=0.6 n=4
++ x.mesh l=0.7 n=5
++ x.mesh l=1.0 n=7
++ x.mesh l=1.2 n=11
++ x.mesh l=3.2 n=21
++ x.mesh l=3.4 n=25
++ x.mesh l=3.7 n=27
++ x.mesh l=3.8 n=28
++ x.mesh l=4.4 n=31
++
++ y.mesh l=-.05 n=1
++ y.mesh l=0.0  n=5
++ y.mesh l=.05  n=9
++ y.mesh l=0.3  n=14
++ y.mesh l=2.0  n=19
++
++ region num=1 material=1 y.l=0.0
++ material num=1 silicon
++ mobility material=1 concmod=sg fieldmod=sg
++ mobility material=1 elec major
++ mobility material=1 elec minor
++ mobility material=1 hole major
++ mobility material=1 hole minor
++
++ region num=2 material=2 y.h=0.0 x.l=0.7 x.h=3.7
++ material num=2 oxide
++
++ elec num=1 x.l=3.8 x.h=4.4	y.l=0.0 y.h=0.0
++ elec num=2 x.l=0.7 x.h=3.7	iy.l=1  iy.h=1
++ elec num=3 x.l=0.0 x.h=0.6	y.l=0.0 y.h=0.0
++ elec num=4 x.l=0.0 x.h=4.4	y.l=2.0 y.h=2.0
++
++ doping unif p.type conc=2.5e16 x.l=0.0 x.h=4.4  y.l=0.0 y.h=2.0
++ doping unif p.type conc=1e16   x.l=0.0 x.h=4.4  y.l=0.0 y.h=0.05
++ doping unif n.type conc=1e20   x.l=0.0 x.h=1.1  y.l=0.0 y.h=0.2
++ doping unif n.type conc=1e20   x.l=3.3 x.h=4.4  y.l=0.0 y.h=0.2
++
++ models concmob fieldmob
++ method ac=direct onec
+
+.end
diff --git a/examples/cider/mos/ringosc.cir b/examples/cider/mos/ringosc.cir
new file mode 100644
index 000000000..0f3133207
--- /dev/null
+++ b/examples/cider/mos/ringosc.cir
@@ -0,0 +1,122 @@
+CMOS Ring Oscillator
+
+Vdd 1 0 5.0v
+Vss 2 0 0.0v
+
+X1 1 2 3 4 INV
+X2 1 2 4 5 INV
+X3 1 2 5 3 INV
+*X4 1 2 6 7 INV
+*X5 1 2 7 8 INV
+*X6 1 2 8 9 INV
+*X7 1 2 9 3 INV
+
+.IC V(3)=0.0v V(4)=2.5v V(5)=5.0v
+* V(6)=0.0v V(7)=5.0v V(8)=0.0v V(9)=5.0v
+
+Vin 3 0 2.5v
+
+.SUBCKT INV 1   2   3   4
+*           Vdd Vss Vin Vout
+M1  14 13 15 16 M_PMOS w=6.0u
+M2  24 23 25 26 M_NMOS w=3.0u
+
+Vgp 3 13 0.0v
+Vdp 4 14 0.0v
+Vsp 1 15 0.0v
+Vbp 1 16 0.0v
+
+Vgn 3 23 0.0v
+Vdn 4 24 0.0v
+Vsn 2 25 0.0v
+Vbn 2 26 0.0v
+.ENDS INV
+
+.model M_NMOS numos
++ x.mesh l=0.0 n=1
++ x.mesh l=0.6 n=4
++ x.mesh l=0.7 n=5
++ x.mesh l=1.0 n=7
++ x.mesh l=1.2 n=11
++ x.mesh l=3.2 n=21
++ x.mesh l=3.4 n=25
++ x.mesh l=3.7 n=27
++ x.mesh l=3.8 n=28
++ x.mesh l=4.4 n=31
++
++ y.mesh l=-.05 n=1
++ y.mesh l=0.0  n=5
++ y.mesh l=.05  n=9
++ y.mesh l=0.3  n=14
++ y.mesh l=2.0  n=19
++
++ region num=1 material=1 y.l=0.0
++ material num=1 silicon
++ mobility material=1 concmod=sg fieldmod=sg
++ mobility material=1 elec major
++ mobility material=1 elec minor
++ mobility material=1 hole major
++ mobility material=1 hole minor
++
++ region num=2 material=2 y.h=0.0 x.l=0.7 x.h=3.7
++ material num=2 oxide
++
++ elec num=1 x.l=3.8 x.h=4.4	y.l=0.0 y.h=0.0
++ elec num=2 x.l=0.7 x.h=3.7	iy.l=1  iy.h=1
++ elec num=3 x.l=0.0 x.h=0.6	y.l=0.0 y.h=0.0
++ elec num=4 x.l=0.0 x.h=4.4	y.l=2.0 y.h=2.0
++
++ doping unif p.type conc=2.5e16 x.l=0.0 x.h=4.4  y.l=0.0 y.h=2.0
++ doping unif p.type conc=1e16   x.l=0.0 x.h=4.4  y.l=0.0 y.h=0.05
++ doping unif n.type conc=1e20   x.l=0.0 x.h=1.1  y.l=0.0 y.h=0.2
++ doping unif n.type conc=1e20   x.l=3.3 x.h=4.4  y.l=0.0 y.h=0.2
++
++ models concmob fieldmob bgn srh conctau
++ method ac=direct onec
+
+.model M_PMOS numos
++ x.mesh l=0.0 n=1
++ x.mesh l=0.6 n=4
++ x.mesh l=0.7 n=5
++ x.mesh l=1.0 n=7
++ x.mesh l=1.2 n=11
++ x.mesh l=3.2 n=21
++ x.mesh l=3.4 n=25
++ x.mesh l=3.7 n=27
++ x.mesh l=3.8 n=28
++ x.mesh l=4.4 n=31
++
++ y.mesh l=-.05 n=1
++ y.mesh l=0.0  n=5
++ y.mesh l=.05  n=9
++ y.mesh l=0.3  n=14
++ y.mesh l=2.0  n=19
++
++ region num=1 material=1 y.l=0.0
++ material num=1 silicon
++ mobility material=1 concmod=sg fieldmod=sg
++ mobility material=1 elec major
++ mobility material=1 elec minor
++ mobility material=1 hole major
++ mobility material=1 hole minor
++
++ region num=2 material=2 y.h=0.0 x.l=0.7 x.h=3.7
++ material num=2 oxide
++
++ elec num=1 x.l=3.8 x.h=4.4	y.l=0.0 y.h=0.0
++ elec num=2 x.l=0.7 x.h=3.7	iy.l=1  iy.h=1
++ elec num=3 x.l=0.0 x.h=0.6	y.l=0.0 y.h=0.0
++ elec num=4 x.l=0.0 x.h=4.4	y.l=2.0 y.h=2.0
++
++ doping unif n.type conc=1e16   x.l=0.0 x.h=4.4  y.l=0.0 y.h=2.0
++ doping unif p.type conc=3e16   x.l=0.0 x.h=4.4  y.l=0.0 y.h=0.05
++ doping unif p.type conc=1e20   x.l=0.0 x.h=1.1  y.l=0.0 y.h=0.2
++ doping unif p.type conc=1e20   x.l=3.3 x.h=4.4  y.l=0.0 y.h=0.2
++
++ models concmob fieldmob bgn srh conctau
++ method ac=direct onec
+
+.tran 0.1ns 5ns
+.print v(4)
+.options acct bypass=1 method=gear
+.end
diff --git a/examples/cider/parallel/BICMOS.LIB b/examples/cider/parallel/BICMOS.LIB
new file mode 100644
index 000000000..606570cae
--- /dev/null
+++ b/examples/cider/parallel/BICMOS.LIB
@@ -0,0 +1,931 @@
+**
+* BICMOS.LIB: Library of models used in the 1.0 um CBiCMOS process
+*    Contains CIDER input descriptions as well as matching
+*    SPICE models for some of the CIDER models.
+**
+
+**
+* One-dimensional models for a
+* polysilicon emitter complementary bipolar process.
+* The default device size is 1um by 1um (LxW)
+**
+
+.model M_NPN1D nbjt level=1
++ title One-Dimensional Numerical Bipolar
++ options base.depth=0.15 base.area=0.1 base.length=0.5 defa=1p
++ x.mesh loc=-0.2 n=1
++ x.mesh loc=0.0  n=51
++ x.mesh wid=0.15 h.e=0.0001 h.m=.004 r=1.2
++ x.mesh wid=1.15 h.s=0.0001 h.m=.004 r=1.2
++ domain   num=1 material=1 x.l=0.0
++ domain   num=2 material=2 x.h=0.0
++ material num=1 silicon
++ mobility mat=1 concmod=ct fieldmod=ct
++ material num=2 polysilicon
++ mobility mat=2 concmod=ct fieldmod=ct
++ doping gauss n.type conc=3e20  x.l=-0.2 x.h=0.0 char.len=0.047
++ doping gauss p.type conc=5e18  x.l=-0.2 x.h=0.0 char.len=0.100
++ doping unif  n.type conc=1e16  x.l=0.0 x.h=1.3
++ doping gauss n.type conc=5e19  x.l=1.3 x.h=1.3 char.len=0.100
++ models bgn srh auger conctau concmob fieldmob 
++ method devtol=1e-12 ac=direct itlim=15
+
+.model M_PNP1D nbjt level=1
++ title One-Dimensional Numerical Bipolar
++ options base.depth=0.2 base.area=0.1 base.length=0.5 defa=1p
++ x.mesh loc=-0.2 n=1
++ x.mesh loc=0.0  n=51
++ x.mesh wid=0.20 h.e=0.0001 h.m=.004 r=1.2
++ x.mesh wid=1.10 h.s=0.0001 h.m=.004 r=1.2
++ domain   num=1 material=1 x.l=0.0
++ domain   num=2 material=2 x.h=0.0
++ material num=1 silicon
++ mobility mat=1 concmod=ct fieldmod=ct
++ material num=2 polysilicon
++ mobility mat=2 concmod=ct fieldmod=ct
++ doping gauss p.type conc=3e20  x.l=-0.2 x.h=0.0 char.len=0.047
++ doping gauss n.type conc=5e17  x.l=-0.2 x.h=0.0 char.len=0.200
++ doping unif  p.type conc=1e16  x.l=0.0 x.h=1.3
++ doping gauss p.type conc=5e19  x.l=1.3 x.h=1.3 char.len=0.100
++ models bgn srh auger conctau concmob fieldmob 
++ method devtol=1e-12 ac=direct itlim=15
+
+**
+* Two-dimensional models for a
+* polysilicon emitter complementary bipolar process.
+* The default device size is 1um by 1um (LxW)
+**
+
+.MODEL M_NPNS nbjt level=2
++ title TWO-DIMENSIONAL NUMERICAL POLYSILICON EMITTER BIPOLAR TRANSISTOR
++ * Since half the device is simulated, double the unit width to get
++ * 1.0 um emitter.  Use a small mesh for this model.
++ options defw=2.0u
++ output stat
++ 
++ x.mesh w=2.0 h.e=0.02 h.m=0.5 r=2.0
++ x.mesh w=0.5 h.s=0.02 h.m=0.2 r=2.0
++ 
++ y.mesh l=-0.2 n=1
++ y.mesh l= 0.0 n=5
++ y.mesh w=0.10 h.e=0.004 h.m=0.05  r=2.5
++ y.mesh w=0.15 h.s=0.004 h.m=0.02  r=2.5
++ y.mesh w=1.05 h.s=0.02  h.m=0.1   r=2.5
++
++ domain num=1 material=1 x.l=2.0 y.h=0.0
++ domain num=2 material=2 x.h=2.0 y.h=0.0
++ domain num=3 material=3 y.l=0.0
++ material num=1 polysilicon
++ material num=2 oxide
++ material num=3 silicon
++
++ elec num=1 x.l=0.0  x.h=0.0  y.l=1.1  y.h=1.3
++ elec num=2 x.l=0.0  x.h=0.5  y.l=0.0  y.h=0.0
++ elec num=3 x.l=2.0  x.h=3.0  y.l=-0.2 y.h=-0.2
++
++ doping gauss n.type conc=3e20 x.l=2.0 x.h=3.0 y.l=-0.2 y.h=0.0
++ + char.l=0.047 lat.rotate
++ doping gauss p.type conc=5e18 x.l=0.0 x.h=5.0 y.l=-0.2 y.h=0.0
++ + char.l=0.100 lat.rotate
++ doping gauss p.type conc=1e20 x.l=0.0 x.h=0.5 y.l=-0.2 y.h=0.0
++ + char.l=0.100 lat.rotate ratio=0.7
++ doping unif  n.type conc=1e16 x.l=0.0 x.h=5.0 y.l=0.0 y.h=1.3
++ doping gauss n.type conc=5e19 x.l=0.0 x.h=5.0 y.l=1.3 y.h=1.3
++ + char.l=0.100 lat.rotate
++
++ method ac=direct itlim=10
++ models bgn srh auger conctau concmob fieldmob
+
+.MODEL M_NPN nbjt level=2
++ title TWO-DIMENSIONAL NUMERICAL POLYSILICON EMITTER BIPOLAR TRANSISTOR
++ * Since half the device is simulated, double the unit width to get
++ * 1.0 um emitter length. Uses a finer mesh in the X direction.
++ options defw=2.0u
++ output stat
++ 
++ x.mesh w=0.5  h.e=0.075 h.m=0.2 r=2.0
++ x.mesh w=0.75 h.s=0.075 h.m=0.2 r=2.0
++ x.mesh w=0.75 h.e=0.05 h.m=0.2 r=1.5
++ x.mesh w=0.5  h.s=0.05 h.m=0.1 r=1.5
++ 
++ y.mesh l=-0.2 n=1
++ y.mesh l= 0.0 n=5
++ y.mesh w=0.10 h.e=0.003 h.m=0.01  r=1.5
++ y.mesh w=0.15 h.s=0.003 h.m=0.02  r=1.5
++ y.mesh w=0.35 h.s=0.02  h.m=0.2   r=1.5
++ y.mesh w=0.40 h.e=0.05  h.m=0.2   r=1.5
++ y.mesh w=0.30 h.s=0.05  h.m=0.1   r=1.5
++
++ domain num=1 material=1 x.l=2.0 y.h=0.0
++ domain num=2 material=2 x.h=2.0 y.h=0.0
++ domain num=3 material=3 y.l=0.0
++ material num=1 polysilicon
++ material num=2 oxide
++ material num=3 silicon
++
++ elec num=1 x.l=0.0  x.h=0.0  y.l=1.1  y.h=1.3
++ elec num=2 x.l=0.0  x.h=0.5  y.l=0.0  y.h=0.0
++ elec num=3 x.l=2.0  x.h=3.0  y.l=-0.2 y.h=-0.2
++
++ doping gauss n.type conc=3e20 x.l=2.0 x.h=3.0 y.l=-0.2 y.h=0.0
++ + char.l=0.047 lat.rotate
++ doping gauss p.type conc=5e18 x.l=0.0 x.h=5.0 y.l=-0.2 y.h=0.0
++ + char.l=0.100 lat.rotate
++ doping gauss p.type conc=1e20 x.l=0.0 x.h=0.5 y.l=-0.2 y.h=0.0
++ + char.l=0.100 lat.rotate ratio=0.7
++ doping unif  n.type conc=1e16 x.l=0.0 x.h=5.0 y.l=0.0 y.h=1.3
++ doping gauss n.type conc=5e19 x.l=0.0 x.h=5.0 y.l=1.3 y.h=1.3
++ + char.l=0.100 lat.rotate
++
++ method ac=direct itlim=10
++ models bgn srh auger conctau concmob fieldmob
+
+.MODEL M_PNPS nbjt level=2
++ title TWO-DIMENSIONAL NUMERICAL POLYSILICON EMITTER BIPOLAR TRANSISTOR
++ * Since half the device is simulated, double the unit width to get
++ * 1.0 um emitter length.  Use a small mesh for this model.
++ options defw=2.0u
++ output stat
++
++ x.mesh w=2.0 h.e=0.02 h.m=0.5 r=2.0
++ x.mesh w=0.5 h.s=0.02 h.m=0.2 r=2.0
++ 
++ y.mesh l=-0.2 n=1
++ y.mesh l= 0.0 n=5
++ y.mesh w=0.12 h.e=0.004 h.m=0.05  r=2.5
++ y.mesh w=0.28 h.s=0.004 h.m=0.02  r=2.5
++ y.mesh w=1.05 h.s=0.02  h.m=0.1   r=2.5
++ 
++ domain num=1 material=1 x.l=2.0 y.h=0.0
++ domain num=2 material=2 x.h=2.0 y.h=0.0
++ domain num=3 material=3 y.l=0.0
++ material num=1 polysilicon
++ material num=2 oxide
++ material num=3 silicon
++
++ elec num=1 x.l=0.0  x.h=0.0  y.l=1.1  y.h=1.3
++ elec num=2 x.l=0.0  x.h=0.5  y.l=0.0  y.h=0.0
++ elec num=3 x.l=2.0  x.h=3.0  y.l=-0.2 y.h=-0.2
++
++ doping gauss p.type conc=3e20 x.l=2.0 x.h=3.0 y.l=-0.2 y.h=0.0
++ + char.l=0.047 lat.rotate
++ doping gauss n.type conc=5e17 x.l=0.0 x.h=5.0 y.l=-0.2 y.h=0.0
++ + char.l=0.200 lat.rotate
++ doping gauss n.type conc=1e20 x.l=0.0 x.h=0.5 y.l=-0.2 y.h=0.0
++ + char.l=0.100 lat.rotate ratio=0.7
++ doping unif  p.type conc=1e16 x.l=0.0 x.h=5.0 y.l=0.0 y.h=1.3
++ doping gauss p.type conc=5e19 x.l=0.0 x.h=5.0 y.l=1.3 y.h=1.3
++ + char.l=0.100 lat.rotate
++
++ method ac=direct itlim=10
++ models bgn srh auger conctau concmob fieldmob
+
+.MODEL M_PNP nbjt level=2
++ title TWO-DIMENSIONAL NUMERICAL POLYSILICON EMITTER BIPOLAR TRANSISTOR
++ * Since half the device is simulated, double the unit width to get
++ * 1.0 um emitter length. Uses a finer mesh in the X direction.
++ options defw=2.0u
++ output stat
++ 
++ x.mesh w=0.5  h.e=0.075 h.m=0.2 r=2.0
++ x.mesh w=0.75 h.s=0.075 h.m=0.2 r=2.0
++ x.mesh w=0.75 h.e=0.05 h.m=0.2 r=1.5
++ x.mesh w=0.5  h.s=0.05 h.m=0.1 r=1.5
++ 
++ y.mesh l=-0.2 n=1
++ y.mesh l= 0.0 n=5
++ y.mesh w=0.12 h.e=0.003 h.m=0.01  r=1.5
++ y.mesh w=0.28 h.s=0.003 h.m=0.02  r=1.5
++ y.mesh w=0.20 h.s=0.02  h.m=0.2   r=1.5
++ y.mesh w=0.40 h.e=0.05  h.m=0.2   r=1.5
++ y.mesh w=0.30 h.s=0.05  h.m=0.1   r=1.5
++
++ domain num=1 material=1 x.l=2.0 y.h=0.0
++ domain num=2 material=2 x.h=2.0 y.h=0.0
++ domain num=3 material=3 y.l=0.0
++ material num=1 polysilicon
++ material num=2 oxide
++ material num=3 silicon
++
++ elec num=1 x.l=0.0  x.h=0.0  y.l=1.1  y.h=1.3
++ elec num=2 x.l=0.0  x.h=0.5  y.l=0.0  y.h=0.0
++ elec num=3 x.l=2.0  x.h=3.0  y.l=-0.2 y.h=-0.2
++
++ doping gauss p.type conc=3e20 x.l=2.0 x.h=3.0 y.l=-0.2 y.h=0.0
++ + char.l=0.047 lat.rotate
++ doping gauss n.type conc=5e17 x.l=0.0 x.h=5.0 y.l=-0.2 y.h=0.0
++ + char.l=0.200 lat.rotate
++ doping gauss n.type conc=1e20 x.l=0.0 x.h=0.5 y.l=-0.2 y.h=0.0
++ + char.l=0.100 lat.rotate ratio=0.7
++ doping unif  p.type conc=1e16 x.l=0.0 x.h=5.0 y.l=0.0 y.h=1.3
++ doping gauss p.type conc=5e19 x.l=0.0 x.h=5.0 y.l=1.3 y.h=1.3
++ + char.l=0.100 lat.rotate
++
++ method ac=direct itlim=10
++ models bgn srh auger conctau concmob fieldmob
+
+**
+* Two-dimensional models for a
+* complementary MOS process.
+* Device models for 1um, 2um, 3um, 4um, 5um, 10um and 50um are provided.
+**
+
+.MODEL M_NMOS_1 numos
++ output stat
++ 
++ x.mesh w=0.9 h.e=0.020 h.m=0.2 r=2.0
++ x.mesh w=0.2 h.e=0.005 h.m=0.02 r=2.0
++ x.mesh w=0.4 h.s=0.005 h.m=0.1 r=2.0
++ x.mesh w=0.4 h.e=0.005 h.m=0.1 r=2.0
++ x.mesh w=0.2 h.e=0.005 h.m=0.02 r=2.0
++ x.mesh w=0.9 h.s=0.020 h.m=0.2 r=2.0
++
++ y.mesh l=-.0200 n=1
++ y.mesh l=0.0 n=6
++ y.mesh w=0.15 h.s=0.0001 h.max=.02 r=2.0
++ y.mesh w=0.45 h.s=0.02 h.max=0.2 r=2.0
++ y.mesh w=1.40 h.s=0.20 h.max=0.4 r=2.0
++
++ region num=1 material=1 y.h=0.0
++ region num=2 material=2 y.l=0.0
++ interface dom=2 nei=1 x.l=1 x.h=2 layer.width=0.0
++ material num=1 oxide
++ material num=2 silicon
++
++ elec num=1 x.l=2.5  x.h=3.1  y.l=0.0 y.h=0.0
++ elec num=2 x.l=1 x.h=2  iy.l=1  iy.h=1
++ elec num=3 x.l=-0.1  x.h=0.5  y.l=0.0 y.h=0.0
++ elec num=4 x.l=-0.1  x.h=3.1 y.l=2.0 y.h=2.0
++
++ doping gauss p.type conc=1.0e17 x.l=-0.1 x.h=3.1 y.l=0.0
++ + char.l=0.30
++ doping unif p.type conc=5.0e15 x.l=-0.1 x.h=3.1 y.l=0.0 y.h=2.1
++ doping gauss n.type conc=4e17  x.l=-0.1 x.h=1 y.l=0.0 y.h=0.0
++ + char.l=0.16 lat.rotate ratio=0.65
++ doping gauss n.type conc=1e20  x.l=-0.1 x.h=0.95 y.l=0.0 y.h=0.08
++ + char.l=0.03 lat.rotate ratio=0.65
++ doping gauss n.type conc=4e17  x.l=2 x.h=3.1 y.l=0.0 y.h=0.0
++ + char.l=0.16 lat.rotate ratio=0.65
++ doping gauss n.type conc=1e20  x.l=2.05 x.h=3.1 y.l=0.0 y.h=0.08
++ + char.l=0.03 lat.rotate ratio=0.65
++
++ contact num=2 workf=4.10
++ models concmob surfmob transmob fieldmob srh auger conctau bgn 
++ method ac=direct itlim=10 onec
+
+.MODEL M_NMOS_2 numos
++ output stat
++ 
++ x.mesh w=0.9 h.e=0.020 h.m=0.2 r=2.0
++ x.mesh w=0.2 h.e=0.005 h.m=0.02 r=2.0
++ x.mesh w=0.9 h.s=0.005 h.m=0.2 r=2.0
++ x.mesh w=0.9 h.e=0.005 h.m=0.2 r=2.0
++ x.mesh w=0.2 h.e=0.005 h.m=0.02 r=2.0
++ x.mesh w=0.9 h.s=0.020 h.m=0.2 r=2.0
++
++ y.mesh l=-.0200 n=1
++ y.mesh l=0.0 n=6
++ y.mesh w=0.15 h.s=0.0001 h.max=.02 r=2.0
++ y.mesh w=0.45 h.s=0.02 h.max=0.2 r=2.0
++ y.mesh w=1.40 h.s=0.20 h.max=0.4 r=2.0
++
++ region num=1 material=1 y.h=0.0
++ region num=2 material=2 y.l=0.0
++ interface dom=2 nei=1 x.l=1 x.h=3 layer.width=0.0
++ material num=1 oxide
++ material num=2 silicon
++
++ elec num=1 x.l=3.5  x.h=4.1  y.l=0.0 y.h=0.0
++ elec num=2 x.l=1 x.h=3  iy.l=1  iy.h=1
++ elec num=3 x.l=-0.1  x.h=0.5  y.l=0.0 y.h=0.0
++ elec num=4 x.l=-0.1  x.h=4.1 y.l=2.0 y.h=2.0
++
++ doping gauss p.type conc=1.0e17 x.l=-0.1 x.h=4.1 y.l=0.0
++ + char.l=0.30
++ doping unif p.type conc=5.0e15 x.l=-0.1 x.h=4.1 y.l=0.0 y.h=2.1
++ doping gauss n.type conc=4e17  x.l=-0.1 x.h=1 y.l=0.0 y.h=0.0
++ + char.l=0.16 lat.rotate ratio=0.65
++ doping gauss n.type conc=1e20  x.l=-0.1 x.h=0.95 y.l=0.0 y.h=0.08
++ + char.l=0.03 lat.rotate ratio=0.65
++ doping gauss n.type conc=4e17  x.l=3 x.h=4.1 y.l=0.0 y.h=0.0
++ + char.l=0.16 lat.rotate ratio=0.65
++ doping gauss n.type conc=1e20  x.l=3.05 x.h=4.1 y.l=0.0 y.h=0.08
++ + char.l=0.03 lat.rotate ratio=0.65
++
++ contact num=2 workf=4.10
++ models concmob surfmob transmob fieldmob srh auger conctau bgn 
++ method ac=direct itlim=10 onec
+
+.MODEL M_NMOS_3 numos
++ output stat
++ 
++ x.mesh w=0.9 h.e=0.020 h.m=0.2 r=2.0
++ x.mesh w=0.2 h.e=0.005 h.m=0.02 r=2.0
++ x.mesh w=1.4 h.s=0.005 h.m=0.3 r=2.0
++ x.mesh w=1.4 h.e=0.005 h.m=0.3 r=2.0
++ x.mesh w=0.2 h.e=0.005 h.m=0.02 r=2.0
++ x.mesh w=0.9 h.s=0.020 h.m=0.2 r=2.0
++
++ y.mesh l=-.0200 n=1
++ y.mesh l=0.0 n=6
++ y.mesh w=0.15 h.s=0.0001 h.max=.02 r=2.0
++ y.mesh w=0.45 h.s=0.02 h.max=0.2 r=2.0
++ y.mesh w=1.40 h.s=0.20 h.max=0.4 r=2.0
++
++ region num=1 material=1 y.h=0.0
++ region num=2 material=2 y.l=0.0
++ interface dom=2 nei=1 x.l=1 x.h=4 layer.width=0.0
++ material num=1 oxide
++ material num=2 silicon
++
++ elec num=1 x.l=4.5  x.h=5.1  y.l=0.0 y.h=0.0
++ elec num=2 x.l=1 x.h=4  iy.l=1  iy.h=1
++ elec num=3 x.l=-0.1  x.h=0.5  y.l=0.0 y.h=0.0
++ elec num=4 x.l=-0.1  x.h=5.1 y.l=2.0 y.h=2.0
++
++ doping gauss p.type conc=1.0e17 x.l=-0.1 x.h=5.1 y.l=0.0
++ + char.l=0.30
++ doping unif p.type conc=5.0e15 x.l=-0.1 x.h=5.1 y.l=0.0 y.h=2.1
++ doping gauss n.type conc=4e17  x.l=-0.1 x.h=1 y.l=0.0 y.h=0.0
++ + char.l=0.16 lat.rotate ratio=0.65
++ doping gauss n.type conc=1e20  x.l=-0.1 x.h=0.95 y.l=0.0 y.h=0.08
++ + char.l=0.03 lat.rotate ratio=0.65
++ doping gauss n.type conc=4e17  x.l=4 x.h=5.1 y.l=0.0 y.h=0.0
++ + char.l=0.16 lat.rotate ratio=0.65
++ doping gauss n.type conc=1e20  x.l=4.05 x.h=5.1 y.l=0.0 y.h=0.08
++ + char.l=0.03 lat.rotate ratio=0.65
++
++ contact num=2 workf=4.10
++ models concmob surfmob transmob fieldmob srh auger conctau bgn 
++ method ac=direct itlim=10 onec
+
+.MODEL M_NMOS_4 numos
++ output stat
++ 
++ x.mesh w=0.9 h.e=0.020 h.m=0.2 r=2.0
++ x.mesh w=0.2 h.e=0.005 h.m=0.02 r=2.0
++ x.mesh w=1.9 h.s=0.005 h.m=0.4 r=2.0
++ x.mesh w=1.9 h.e=0.005 h.m=0.4 r=2.0
++ x.mesh w=0.2 h.e=0.005 h.m=0.02 r=2.0
++ x.mesh w=0.9 h.s=0.020 h.m=0.2 r=2.0
++
++ y.mesh l=-.0200 n=1
++ y.mesh l=0.0 n=6
++ y.mesh w=0.15 h.s=0.0001 h.max=.02 r=2.0
++ y.mesh w=0.45 h.s=0.02 h.max=0.2 r=2.0
++ y.mesh w=1.40 h.s=0.20 h.max=0.4 r=2.0
++
++ region num=1 material=1 y.h=0.0
++ region num=2 material=2 y.l=0.0
++ interface dom=2 nei=1 x.l=1 x.h=5 layer.width=0.0
++ material num=1 oxide
++ material num=2 silicon
++
++ elec num=1 x.l=5.5  x.h=6.1  y.l=0.0 y.h=0.0
++ elec num=2 x.l=1 x.h=5  iy.l=1  iy.h=1
++ elec num=3 x.l=-0.1  x.h=0.5  y.l=0.0 y.h=0.0
++ elec num=4 x.l=-0.1  x.h=6.1 y.l=2.0 y.h=2.0
++
++ doping gauss p.type conc=1.0e17 x.l=-0.1 x.h=6.1 y.l=0.0
++ + char.l=0.30
++ doping unif p.type conc=5.0e15 x.l=-0.1 x.h=6.1 y.l=0.0 y.h=2.1
++ doping gauss n.type conc=4e17  x.l=-0.1 x.h=1 y.l=0.0 y.h=0.0
++ + char.l=0.16 lat.rotate ratio=0.65
++ doping gauss n.type conc=1e20  x.l=-0.1 x.h=0.95 y.l=0.0 y.h=0.08
++ + char.l=0.03 lat.rotate ratio=0.65
++ doping gauss n.type conc=4e17  x.l=5 x.h=6.1 y.l=0.0 y.h=0.0
++ + char.l=0.16 lat.rotate ratio=0.65
++ doping gauss n.type conc=1e20  x.l=5.05 x.h=6.1 y.l=0.0 y.h=0.08
++ + char.l=0.03 lat.rotate ratio=0.65
++
++ contact num=2 workf=4.10
++ models concmob surfmob transmob fieldmob srh auger conctau bgn 
++ method ac=direct itlim=10 onec
+
+.MODEL M_NMOS_5 numos
++ output stat
++ 
++ x.mesh w=0.9 h.e=0.020 h.m=0.2 r=2.0
++ x.mesh w=0.2 h.e=0.005 h.m=0.02 r=2.0
++ x.mesh w=2.4 h.s=0.005 h.m=0.5 r=2.0
++ x.mesh w=2.4 h.e=0.005 h.m=0.5 r=2.0
++ x.mesh w=0.2 h.e=0.005 h.m=0.02 r=2.0
++ x.mesh w=0.9 h.s=0.020 h.m=0.2 r=2.0
++
++ y.mesh l=-.0200 n=1
++ y.mesh l=0.0 n=6
++ y.mesh w=0.15 h.s=0.0001 h.max=.02 r=2.0
++ y.mesh w=0.45 h.s=0.02 h.max=0.2 r=2.0
++ y.mesh w=1.40 h.s=0.20 h.max=0.4 r=2.0
++
++ region num=1 material=1 y.h=0.0
++ region num=2 material=2 y.l=0.0
++ interface dom=2 nei=1 x.l=1 x.h=6 layer.width=0.0
++ material num=1 oxide
++ material num=2 silicon
++
++ elec num=1 x.l=6.5  x.h=7.1  y.l=0.0 y.h=0.0
++ elec num=2 x.l=1 x.h=6  iy.l=1  iy.h=1
++ elec num=3 x.l=-0.1  x.h=0.5  y.l=0.0 y.h=0.0
++ elec num=4 x.l=-0.1  x.h=7.1 y.l=2.0 y.h=2.0
++
++ doping gauss p.type conc=1.0e17 x.l=-0.1 x.h=7.1 y.l=0.0
++ + char.l=0.30
++ doping unif p.type conc=5.0e15 x.l=-0.1 x.h=7.1 y.l=0.0 y.h=2.1
++ doping gauss n.type conc=4e17  x.l=-0.1 x.h=1 y.l=0.0 y.h=0.0
++ + char.l=0.16 lat.rotate ratio=0.65
++ doping gauss n.type conc=1e20  x.l=-0.1 x.h=0.95 y.l=0.0 y.h=0.08
++ + char.l=0.03 lat.rotate ratio=0.65
++ doping gauss n.type conc=4e17  x.l=6 x.h=7.1 y.l=0.0 y.h=0.0
++ + char.l=0.16 lat.rotate ratio=0.65
++ doping gauss n.type conc=1e20  x.l=6.05 x.h=7.1 y.l=0.0 y.h=0.08
++ + char.l=0.03 lat.rotate ratio=0.65
++
++ contact num=2 workf=4.10
++ models concmob surfmob transmob fieldmob srh auger conctau bgn 
++ method ac=direct itlim=10 onec
+
+.MODEL M_NMOS_10 numos
++ output stat
++ 
++ x.mesh w=0.9 h.e=0.020 h.m=0.2 r=2.0
++ x.mesh w=0.2 h.e=0.005 h.m=0.02 r=2.0
++ x.mesh w=4.9 h.s=0.005 h.m=1 r=2.0
++ x.mesh w=4.9 h.e=0.005 h.m=1 r=2.0
++ x.mesh w=0.2 h.e=0.005 h.m=0.02 r=2.0
++ x.mesh w=0.9 h.s=0.020 h.m=0.2 r=2.0
++
++ y.mesh l=-.0200 n=1
++ y.mesh l=0.0 n=6
++ y.mesh w=0.15 h.s=0.0001 h.max=.02 r=2.0
++ y.mesh w=0.45 h.s=0.02 h.max=0.2 r=2.0
++ y.mesh w=1.40 h.s=0.20 h.max=0.4 r=2.0
++
++ region num=1 material=1 y.h=0.0
++ region num=2 material=2 y.l=0.0
++ interface dom=2 nei=1 x.l=1 x.h=11 layer.width=0.0
++ material num=1 oxide
++ material num=2 silicon
++
++ elec num=1 x.l=11.5  x.h=12.1  y.l=0.0 y.h=0.0
++ elec num=2 x.l=1 x.h=11  iy.l=1  iy.h=1
++ elec num=3 x.l=-0.1  x.h=0.5  y.l=0.0 y.h=0.0
++ elec num=4 x.l=-0.1  x.h=12.1 y.l=2.0 y.h=2.0
++
++ doping gauss p.type conc=1.0e17 x.l=-0.1 x.h=12.1 y.l=0.0
++ + char.l=0.30
++ doping unif p.type conc=5.0e15 x.l=-0.1 x.h=12.1 y.l=0.0 y.h=2.1
++ doping gauss n.type conc=4e17  x.l=-0.1 x.h=1 y.l=0.0 y.h=0.0
++ + char.l=0.16 lat.rotate ratio=0.65
++ doping gauss n.type conc=1e20  x.l=-0.1 x.h=0.95 y.l=0.0 y.h=0.08
++ + char.l=0.03 lat.rotate ratio=0.65
++ doping gauss n.type conc=4e17  x.l=11 x.h=12.1 y.l=0.0 y.h=0.0
++ + char.l=0.16 lat.rotate ratio=0.65
++ doping gauss n.type conc=1e20  x.l=11.05 x.h=12.1 y.l=0.0 y.h=0.08
++ + char.l=0.03 lat.rotate ratio=0.65
++
++ contact num=2 workf=4.10
++ models concmob surfmob transmob fieldmob srh auger conctau bgn 
++ method ac=direct itlim=10 onec
+
+.MODEL M_NMOS_50 numos
++ output stat
++ 
++ x.mesh w=0.9 h.e=0.020 h.m=0.2 r=2.0
++ x.mesh w=0.2 h.e=0.005 h.m=0.02 r=2.0
++ x.mesh w=24.9 h.s=0.005 h.m=5 r=2.0
++ x.mesh w=24.9 h.e=0.005 h.m=5 r=2.0
++ x.mesh w=0.2 h.e=0.005 h.m=0.02 r=2.0
++ x.mesh w=0.9 h.s=0.020 h.m=0.2 r=2.0
++
++ y.mesh l=-.0200 n=1
++ y.mesh l=0.0 n=6
++ y.mesh w=0.15 h.s=0.0001 h.max=.02 r=2.0
++ y.mesh w=0.45 h.s=0.02 h.max=0.2 r=2.0
++ y.mesh w=1.40 h.s=0.20 h.max=0.4 r=2.0
++
++ region num=1 material=1 y.h=0.0
++ region num=2 material=2 y.l=0.0
++ interface dom=2 nei=1 x.l=1 x.h=51 layer.width=0.0
++ material num=1 oxide
++ material num=2 silicon
++
++ elec num=1 x.l=51.5  x.h=52.1  y.l=0.0 y.h=0.0
++ elec num=2 x.l=1 x.h=51  iy.l=1  iy.h=1
++ elec num=3 x.l=-0.1  x.h=0.5  y.l=0.0 y.h=0.0
++ elec num=4 x.l=-0.1  x.h=52.1 y.l=2.0 y.h=2.0
++
++ doping gauss p.type conc=1.0e17 x.l=-0.1 x.h=52.1 y.l=0.0
++ + char.l=0.30
++ doping unif p.type conc=5.0e15 x.l=-0.1 x.h=52.1 y.l=0.0 y.h=2.1
++ doping gauss n.type conc=4e17  x.l=-0.1 x.h=1 y.l=0.0 y.h=0.0
++ + char.l=0.16 lat.rotate ratio=0.65
++ doping gauss n.type conc=1e20  x.l=-0.1 x.h=0.95 y.l=0.0 y.h=0.08
++ + char.l=0.03 lat.rotate ratio=0.65
++ doping gauss n.type conc=4e17  x.l=51 x.h=52.1 y.l=0.0 y.h=0.0
++ + char.l=0.16 lat.rotate ratio=0.65
++ doping gauss n.type conc=1e20  x.l=51.05 x.h=52.1 y.l=0.0 y.h=0.08
++ + char.l=0.03 lat.rotate ratio=0.65
++
++ contact num=2 workf=4.10
++ models concmob surfmob transmob fieldmob srh auger conctau bgn 
++ method ac=direct itlim=10 onec
+
+.MODEL M_PMOS_1 numos
++ output stat
++ 
++ x.mesh w=0.9 h.e=0.020 h.m=0.2 r=2.0
++ x.mesh w=0.2 h.e=0.005 h.m=0.02 r=2.0
++ x.mesh w=0.4 h.s=0.005 h.m=0.1 r=2.0
++ x.mesh w=0.4 h.e=0.005 h.m=0.1 r=2.0
++ x.mesh w=0.2 h.e=0.005 h.m=0.02 r=2.0
++ x.mesh w=0.9 h.s=0.020 h.m=0.2 r=2.0
++
++ y.mesh l=-.0200 n=1
++ y.mesh l=0.0 n=6
++ y.mesh w=0.15 h.s=0.0001 h.max=.02 r=2.0
++ y.mesh w=0.45 h.s=0.02 h.max=0.2 r=2.0
++ y.mesh w=1.40 h.s=0.20 h.max=0.4 r=2.0
++
++ region num=1 material=1 y.h=0.0
++ region num=2 material=2 y.l=0.0
++ interface dom=2 nei=1 x.l=1 x.h=2 layer.width=0.0
++ material num=1 oxide
++ material num=2 silicon
++
++ elec num=1 x.l=2.5  x.h=3.1  y.l=0.0 y.h=0.0
++ elec num=2 x.l=1 x.h=2  iy.l=1  iy.h=1
++ elec num=3 x.l=-0.1  x.h=0.5  y.l=0.0 y.h=0.0
++ elec num=4 x.l=-0.1  x.h=3.1 y.l=2.0 y.h=2.0
++
++ doping gauss n.type conc=1.0e17 x.l=-0.1 x.h=3.1 y.l=0.0
++ + char.l=0.30
++ doping unif n.type conc=5.0e15 x.l=-0.1 x.h=3.1 y.l=0.0 y.h=2.1
++ doping gauss p.type conc=4e17  x.l=-0.1 x.h=1 y.l=0.0 y.h=0.0
++ + char.l=0.16 lat.rotate ratio=0.65
++ doping gauss p.type conc=1e20  x.l=-0.1 x.h=0.95 y.l=0.0 y.h=0.08
++ + char.l=0.03 lat.rotate ratio=0.65
++ doping gauss p.type conc=4e17  x.l=2 x.h=3.1 y.l=0.0 y.h=0.0
++ + char.l=0.16 lat.rotate ratio=0.65
++ doping gauss p.type conc=1e20  x.l=2.05 x.h=3.1 y.l=0.0 y.h=0.08
++ + char.l=0.03 lat.rotate ratio=0.65
++
++ contact num=2 workf=5.29
++ models concmob surfmob transmob fieldmob srh auger conctau bgn 
++ method ac=direct itlim=10 onec
+
+.MODEL M_PMOS_2 numos
++ output stat
++ 
++ x.mesh w=0.9 h.e=0.020 h.m=0.2 r=2.0
++ x.mesh w=0.2 h.e=0.005 h.m=0.02 r=2.0
++ x.mesh w=0.9 h.s=0.005 h.m=0.2 r=2.0
++ x.mesh w=0.9 h.e=0.005 h.m=0.2 r=2.0
++ x.mesh w=0.2 h.e=0.005 h.m=0.02 r=2.0
++ x.mesh w=0.9 h.s=0.020 h.m=0.2 r=2.0
++
++ y.mesh l=-.0200 n=1
++ y.mesh l=0.0 n=6
++ y.mesh w=0.15 h.s=0.0001 h.max=.02 r=2.0
++ y.mesh w=0.45 h.s=0.02 h.max=0.2 r=2.0
++ y.mesh w=1.40 h.s=0.20 h.max=0.4 r=2.0
++
++ region num=1 material=1 y.h=0.0
++ region num=2 material=2 y.l=0.0
++ interface dom=2 nei=1 x.l=1 x.h=3 layer.width=0.0
++ material num=1 oxide
++ material num=2 silicon
++
++ elec num=1 x.l=3.5  x.h=4.1  y.l=0.0 y.h=0.0
++ elec num=2 x.l=1 x.h=3  iy.l=1  iy.h=1
++ elec num=3 x.l=-0.1  x.h=0.5  y.l=0.0 y.h=0.0
++ elec num=4 x.l=-0.1  x.h=4.1 y.l=2.0 y.h=2.0
++
++ doping gauss n.type conc=1.0e17 x.l=-0.1 x.h=4.1 y.l=0.0
++ + char.l=0.30
++ doping unif n.type conc=5.0e15 x.l=-0.1 x.h=4.1 y.l=0.0 y.h=2.1
++ doping gauss p.type conc=4e17  x.l=-0.1 x.h=1 y.l=0.0 y.h=0.0
++ + char.l=0.16 lat.rotate ratio=0.65
++ doping gauss p.type conc=1e20  x.l=-0.1 x.h=0.95 y.l=0.0 y.h=0.08
++ + char.l=0.03 lat.rotate ratio=0.65
++ doping gauss p.type conc=4e17  x.l=3 x.h=4.1 y.l=0.0 y.h=0.0
++ + char.l=0.16 lat.rotate ratio=0.65
++ doping gauss p.type conc=1e20  x.l=3.05 x.h=4.1 y.l=0.0 y.h=0.08
++ + char.l=0.03 lat.rotate ratio=0.65
++
++ contact num=2 workf=5.29
++ models concmob surfmob transmob fieldmob srh auger conctau bgn 
++ method ac=direct itlim=10 onec
+
+.MODEL M_PMOS_3 numos
++ output stat
++ 
++ x.mesh w=0.9 h.e=0.020 h.m=0.2 r=2.0
++ x.mesh w=0.2 h.e=0.005 h.m=0.02 r=2.0
++ x.mesh w=1.4 h.s=0.005 h.m=0.3 r=2.0
++ x.mesh w=1.4 h.e=0.005 h.m=0.3 r=2.0
++ x.mesh w=0.2 h.e=0.005 h.m=0.02 r=2.0
++ x.mesh w=0.9 h.s=0.020 h.m=0.2 r=2.0
++
++ y.mesh l=-.0200 n=1
++ y.mesh l=0.0 n=6
++ y.mesh w=0.15 h.s=0.0001 h.max=.02 r=2.0
++ y.mesh w=0.45 h.s=0.02 h.max=0.2 r=2.0
++ y.mesh w=1.40 h.s=0.20 h.max=0.4 r=2.0
++
++ region num=1 material=1 y.h=0.0
++ region num=2 material=2 y.l=0.0
++ interface dom=2 nei=1 x.l=1 x.h=4 layer.width=0.0
++ material num=1 oxide
++ material num=2 silicon
++
++ elec num=1 x.l=4.5  x.h=5.1  y.l=0.0 y.h=0.0
++ elec num=2 x.l=1 x.h=4  iy.l=1  iy.h=1
++ elec num=3 x.l=-0.1  x.h=0.5  y.l=0.0 y.h=0.0
++ elec num=4 x.l=-0.1  x.h=5.1 y.l=2.0 y.h=2.0
++
++ doping gauss n.type conc=1.0e17 x.l=-0.1 x.h=5.1 y.l=0.0
++ + char.l=0.30
++ doping unif n.type conc=5.0e15 x.l=-0.1 x.h=5.1 y.l=0.0 y.h=2.1
++ doping gauss p.type conc=4e17  x.l=-0.1 x.h=1 y.l=0.0 y.h=0.0
++ + char.l=0.16 lat.rotate ratio=0.65
++ doping gauss p.type conc=1e20  x.l=-0.1 x.h=0.95 y.l=0.0 y.h=0.08
++ + char.l=0.03 lat.rotate ratio=0.65
++ doping gauss p.type conc=4e17  x.l=4 x.h=5.1 y.l=0.0 y.h=0.0
++ + char.l=0.16 lat.rotate ratio=0.65
++ doping gauss p.type conc=1e20  x.l=4.05 x.h=5.1 y.l=0.0 y.h=0.08
++ + char.l=0.03 lat.rotate ratio=0.65
++
++ contact num=2 workf=5.29
++ models concmob surfmob transmob fieldmob srh auger conctau bgn 
++ method ac=direct itlim=10 onec
+
+.MODEL M_PMOS_4 numos
++ output stat
++ 
++ x.mesh w=0.9 h.e=0.020 h.m=0.2 r=2.0
++ x.mesh w=0.2 h.e=0.005 h.m=0.02 r=2.0
++ x.mesh w=1.9 h.s=0.005 h.m=0.4 r=2.0
++ x.mesh w=1.9 h.e=0.005 h.m=0.4 r=2.0
++ x.mesh w=0.2 h.e=0.005 h.m=0.02 r=2.0
++ x.mesh w=0.9 h.s=0.020 h.m=0.2 r=2.0
++
++ y.mesh l=-.0200 n=1
++ y.mesh l=0.0 n=6
++ y.mesh w=0.15 h.s=0.0001 h.max=.02 r=2.0
++ y.mesh w=0.45 h.s=0.02 h.max=0.2 r=2.0
++ y.mesh w=1.40 h.s=0.20 h.max=0.4 r=2.0
++
++ region num=1 material=1 y.h=0.0
++ region num=2 material=2 y.l=0.0
++ interface dom=2 nei=1 x.l=1 x.h=5 layer.width=0.0
++ material num=1 oxide
++ material num=2 silicon
++
++ elec num=1 x.l=5.5  x.h=6.1  y.l=0.0 y.h=0.0
++ elec num=2 x.l=1 x.h=5  iy.l=1  iy.h=1
++ elec num=3 x.l=-0.1  x.h=0.5  y.l=0.0 y.h=0.0
++ elec num=4 x.l=-0.1  x.h=6.1 y.l=2.0 y.h=2.0
++
++ doping gauss n.type conc=1.0e17 x.l=-0.1 x.h=6.1 y.l=0.0
++ + char.l=0.30
++ doping unif n.type conc=5.0e15 x.l=-0.1 x.h=6.1 y.l=0.0 y.h=2.1
++ doping gauss p.type conc=4e17  x.l=-0.1 x.h=1 y.l=0.0 y.h=0.0
++ + char.l=0.16 lat.rotate ratio=0.65
++ doping gauss p.type conc=1e20  x.l=-0.1 x.h=0.95 y.l=0.0 y.h=0.08
++ + char.l=0.03 lat.rotate ratio=0.65
++ doping gauss p.type conc=4e17  x.l=5 x.h=6.1 y.l=0.0 y.h=0.0
++ + char.l=0.16 lat.rotate ratio=0.65
++ doping gauss p.type conc=1e20  x.l=5.05 x.h=6.1 y.l=0.0 y.h=0.08
++ + char.l=0.03 lat.rotate ratio=0.65
++
++ contact num=2 workf=5.29
++ models concmob surfmob transmob fieldmob srh auger conctau bgn 
++ method ac=direct itlim=10 onec
+
+.MODEL M_PMOS_5 numos
++ output stat
++ 
++ x.mesh w=0.9 h.e=0.020 h.m=0.2 r=2.0
++ x.mesh w=0.2 h.e=0.005 h.m=0.02 r=2.0
++ x.mesh w=2.4 h.s=0.005 h.m=0.5 r=2.0
++ x.mesh w=2.4 h.e=0.005 h.m=0.5 r=2.0
++ x.mesh w=0.2 h.e=0.005 h.m=0.02 r=2.0
++ x.mesh w=0.9 h.s=0.020 h.m=0.2 r=2.0
++
++ y.mesh l=-.0200 n=1
++ y.mesh l=0.0 n=6
++ y.mesh w=0.15 h.s=0.0001 h.max=.02 r=2.0
++ y.mesh w=0.45 h.s=0.02 h.max=0.2 r=2.0
++ y.mesh w=1.40 h.s=0.20 h.max=0.4 r=2.0
++
++ region num=1 material=1 y.h=0.0
++ region num=2 material=2 y.l=0.0
++ interface dom=2 nei=1 x.l=1 x.h=6 layer.width=0.0
++ material num=1 oxide
++ material num=2 silicon
++
++ elec num=1 x.l=6.5  x.h=7.1  y.l=0.0 y.h=0.0
++ elec num=2 x.l=1 x.h=6  iy.l=1  iy.h=1
++ elec num=3 x.l=-0.1  x.h=0.5  y.l=0.0 y.h=0.0
++ elec num=4 x.l=-0.1  x.h=7.1 y.l=2.0 y.h=2.0
++
++ doping gauss n.type conc=1.0e17 x.l=-0.1 x.h=7.1 y.l=0.0
++ + char.l=0.30
++ doping unif n.type conc=5.0e15 x.l=-0.1 x.h=7.1 y.l=0.0 y.h=2.1
++ doping gauss p.type conc=4e17  x.l=-0.1 x.h=1 y.l=0.0 y.h=0.0
++ + char.l=0.16 lat.rotate ratio=0.65
++ doping gauss p.type conc=1e20  x.l=-0.1 x.h=0.95 y.l=0.0 y.h=0.08
++ + char.l=0.03 lat.rotate ratio=0.65
++ doping gauss p.type conc=4e17  x.l=6 x.h=7.1 y.l=0.0 y.h=0.0
++ + char.l=0.16 lat.rotate ratio=0.65
++ doping gauss p.type conc=1e20  x.l=6.05 x.h=7.1 y.l=0.0 y.h=0.08
++ + char.l=0.03 lat.rotate ratio=0.65
++
++ contact num=2 workf=5.29
++ models concmob surfmob transmob fieldmob srh auger conctau bgn 
++ method ac=direct itlim=10 onec
+
+.MODEL M_PMOS_10 numos
++ output stat
++ 
++ x.mesh w=0.9 h.e=0.020 h.m=0.2 r=2.0
++ x.mesh w=0.2 h.e=0.005 h.m=0.02 r=2.0
++ x.mesh w=4.9 h.s=0.005 h.m=1 r=2.0
++ x.mesh w=4.9 h.e=0.005 h.m=1 r=2.0
++ x.mesh w=0.2 h.e=0.005 h.m=0.02 r=2.0
++ x.mesh w=0.9 h.s=0.020 h.m=0.2 r=2.0
++
++ y.mesh l=-.0200 n=1
++ y.mesh l=0.0 n=6
++ y.mesh w=0.15 h.s=0.0001 h.max=.02 r=2.0
++ y.mesh w=0.45 h.s=0.02 h.max=0.2 r=2.0
++ y.mesh w=1.40 h.s=0.20 h.max=0.4 r=2.0
++
++ region num=1 material=1 y.h=0.0
++ region num=2 material=2 y.l=0.0
++ interface dom=2 nei=1 x.l=1 x.h=11 layer.width=0.0
++ material num=1 oxide
++ material num=2 silicon
++
++ elec num=1 x.l=11.5  x.h=12.1  y.l=0.0 y.h=0.0
++ elec num=2 x.l=1 x.h=11  iy.l=1  iy.h=1
++ elec num=3 x.l=-0.1  x.h=0.5  y.l=0.0 y.h=0.0
++ elec num=4 x.l=-0.1  x.h=12.1 y.l=2.0 y.h=2.0
++
++ doping gauss n.type conc=1.0e17 x.l=-0.1 x.h=12.1 y.l=0.0
++ + char.l=0.30
++ doping unif n.type conc=5.0e15 x.l=-0.1 x.h=12.1 y.l=0.0 y.h=2.1
++ doping gauss p.type conc=4e17  x.l=-0.1 x.h=1 y.l=0.0 y.h=0.0
++ + char.l=0.16 lat.rotate ratio=0.65
++ doping gauss p.type conc=1e20  x.l=-0.1 x.h=0.95 y.l=0.0 y.h=0.08
++ + char.l=0.03 lat.rotate ratio=0.65
++ doping gauss p.type conc=4e17  x.l=11 x.h=12.1 y.l=0.0 y.h=0.0
++ + char.l=0.16 lat.rotate ratio=0.65
++ doping gauss p.type conc=1e20  x.l=11.05 x.h=12.1 y.l=0.0 y.h=0.08
++ + char.l=0.03 lat.rotate ratio=0.65
++
++ contact num=2 workf=5.29
++ models concmob surfmob transmob fieldmob srh auger conctau bgn 
++ method ac=direct itlim=10 onec
+
+.MODEL M_PMOS_50 numos
++ output stat
++ 
++ x.mesh w=0.9 h.e=0.020 h.m=0.2 r=2.0
++ x.mesh w=0.2 h.e=0.005 h.m=0.02 r=2.0
++ x.mesh w=24.9 h.s=0.005 h.m=5 r=2.0
++ x.mesh w=24.9 h.e=0.005 h.m=5 r=2.0
++ x.mesh w=0.2 h.e=0.005 h.m=0.02 r=2.0
++ x.mesh w=0.9 h.s=0.020 h.m=0.2 r=2.0
++
++ y.mesh l=-.0200 n=1
++ y.mesh l=0.0 n=6
++ y.mesh w=0.15 h.s=0.0001 h.max=.02 r=2.0
++ y.mesh w=0.45 h.s=0.02 h.max=0.2 r=2.0
++ y.mesh w=1.40 h.s=0.20 h.max=0.4 r=2.0
++
++ region num=1 material=1 y.h=0.0
++ region num=2 material=2 y.l=0.0
++ interface dom=2 nei=1 x.l=1 x.h=51 layer.width=0.0
++ material num=1 oxide
++ material num=2 silicon
++
++ elec num=1 x.l=51.5  x.h=52.1  y.l=0.0 y.h=0.0
++ elec num=2 x.l=1 x.h=51  iy.l=1  iy.h=1
++ elec num=3 x.l=-0.1  x.h=0.5  y.l=0.0 y.h=0.0
++ elec num=4 x.l=-0.1  x.h=52.1 y.l=2.0 y.h=2.0
++
++ doping gauss n.type conc=1.0e17 x.l=-0.1 x.h=52.1 y.l=0.0
++ + char.l=0.30
++ doping unif n.type conc=5.0e15 x.l=-0.1 x.h=52.1 y.l=0.0 y.h=2.1
++ doping gauss p.type conc=4e17  x.l=-0.1 x.h=1 y.l=0.0 y.h=0.0
++ + char.l=0.16 lat.rotate ratio=0.65
++ doping gauss p.type conc=1e20  x.l=-0.1 x.h=0.95 y.l=0.0 y.h=0.08
++ + char.l=0.03 lat.rotate ratio=0.65
++ doping gauss p.type conc=4e17  x.l=51 x.h=52.1 y.l=0.0 y.h=0.0
++ + char.l=0.16 lat.rotate ratio=0.65
++ doping gauss p.type conc=1e20  x.l=51.05 x.h=52.1 y.l=0.0 y.h=0.08
++ + char.l=0.03 lat.rotate ratio=0.65
++
++ contact num=2 workf=5.29
++ models concmob surfmob transmob fieldmob srh auger conctau bgn
++ method ac=direct itlim=10 onec
+
+**
+* BSIM1 NMOS and PMOS 1.0 \um models.
+* Gummel-Poon bipolar models.
+**
+.model M_NSIM_1 nmos level=4
++vfb= -1.1908
++phi= .8399
++k1= 1.5329
++k2= 193.7322m
++eta= 2m
++muz= 746.0
++u0= 90.0m
++x2mz= 10.1429
++x2e= -2.5m
++x3e= 0.2m
++x2u0= -10.0m
++mus= 975.0
++u1= .20
++x2ms= 0.0
++x2u1= 0.0
++x3ms= 10
++x3u1= 5.0m
++tox=2.00000e-02
++cgdo=2.0e-10
++cgso=2.0e-10
++cgbo=0.0
++temp= 27
++vdd= 7.0
++xpart
++n0= 1.5686
++nb= 94.6392m
++nd=0.00000e+00
++rsh=30.0         cj=7.000e-004     cjsw=4.20e-010
++js=1.00e-008     pb=0.700e000
++pbsw=0.8000e000  mj=0.5            mjsw=0.33
++wdf=0            dell=0.20u
+
+.model M_PSIM_1 pmos level=4
++vfb= -1.3674
++phi= .8414
++k1= 1.5686
++k2= 203m
++eta= 2m
++muz= 340.0
++u0= 35.0m
++x2mz= 6.0
++x2e= 0.0
++x3e= -0.2m
++x2u0= -15.0m
++mus= 440.0
++u1=  .38
++x2ms= 0.0
++x2u1= 0.0
++x3ms= -20
++x3u1= -10.0m
++tox=2.00000e-02
++cgdo=2.0e-10
++cgso=2.0e-10
++cgbo=0.0
++temp= 27
++vdd= 5.0
++xpart
++n0= 1.5686
++nb= 94.6392m
++nd=0.00000e+00
++rsh=80.0         cj=7.000e-004     cjsw=4.20e-010
++js=1.00e-008     pb=0.700e000
++pbsw=0.8000e000  mj=0.5            mjsw=0.33
++wdf=0            dell=0.17u
+
+.model M_GNPN npn
++ is=1.3e-16
++ nf=1.00 bf=262.5 ikf=25mA  vaf=20v
++ nr=1.00 br=97.5 ikr=0.5mA var=1.8v
++ rc=20.0
++ re=0.09
++ rb=15.0
++ ise=4.0e-16 ne=2.1
++ isc=7.2e-17 nc=2.0
++ tf=9.4ps itf=26uA xtf=0.5
++ tr=10ns
++ cje=89.44fF vje=0.95 mje=0.5
++ cjc=12.82fF vjc=0.73 mjc=0.49
+
+.model M_GPNP pnp
++ is=5.8e-17
++ nf=1.001 bf=96.4 ikf=12mA  vaf=29v
++ nr=1.0   br=17.3 ikr=0.2mA var=2.0v
++ rc=50.0
++ re=0.17
++ rb=20.0
++ ise=6.8e-17 ne=2.0
++ isc=9.0e-17 nc=2.1
++ tf=27.4ps itf=26uA xtf=0.5
++ tr=10ns
++ cje=55.36fF vje=0.95 mje=0.58
++ cjc=11.80fF vjc=0.72 mjc=0.46
diff --git a/examples/cider/parallel/bicmpd.cir b/examples/cider/parallel/bicmpd.cir
new file mode 100644
index 000000000..be26e40d2
--- /dev/null
+++ b/examples/cider/parallel/bicmpd.cir
@@ -0,0 +1,26 @@
+BICMOS INVERTER PULLDOWN CIRCUIT
+
+VSS 2 0 0V
+
+VIN 3 2 0V (PULSE 0.0V 4.2V 0NS 1NS 1NS 9NS 20NS)
+
+M1  8 3 5 11 M_NMOS_1 W=4U L=1U
+VD  4 8 0V
+VBK 11 2 0V
+
+Q1  10 7 9   M_NPNS AREA=8
+VC  4 10 0V
+VB  5 7 0V
+VE  9 2 0V
+
+CL  4 6 1PF
+VL  6 2 0V
+
+.IC V(10)=5.0V V(7)=0.0V 
+.TRAN 0.1NS 5NS 0NS 0.1NS
+.PLOT TRAN I(VIN)
+
+.INCLUDE BICMOS.LIB
+
+.OPTIONS ACCT BYPASS=1
+.END
diff --git a/examples/cider/parallel/bicmpu.cir b/examples/cider/parallel/bicmpu.cir
new file mode 100644
index 000000000..7067ce14d
--- /dev/null
+++ b/examples/cider/parallel/bicmpu.cir
@@ -0,0 +1,24 @@
+BICMOS INVERTER PULLUP CIRCUIT
+
+VDD 1 0 5.0V
+VSS 2 0 0.0V
+
+VIN 3 0 0.75V
+
+VC  1 11 0.0V
+VB  5 15 0.0V
+
+Q1  11 15 4 M_NPNS   AREA=8
+M1  5 3 1 1 M_PMOS_1 W=10U L=1U
+
+CL  4 0 5.0PF
+
+.IC V(4)=0.75V V(5)=0.0V
+
+.INCLUDE BICMOS.LIB
+
+.TRAN 0.5NS 4.0NS
+.PRINT TRAN V(3) V(4)
+
+.OPTION ACCT BYPASS=1
+.END
diff --git a/examples/cider/parallel/clkfeed.cir b/examples/cider/parallel/clkfeed.cir
new file mode 100644
index 000000000..d0a06f157
--- /dev/null
+++ b/examples/cider/parallel/clkfeed.cir
@@ -0,0 +1,34 @@
+SWITCHED CURRENT CELL - CLOCK FEEDTHROUGH
+
+VDD 1 0 5.0V
+VSS 2 0 0.0V
+
+IIN 13 0 0.0
+VIN 13 3 0.0
+VL  4 0 2.5V
+VCK 6 0 5.0V PULSE 5.0V 0.0V 5.0NS 5NS 5NS 20NS 50NS
+
+M1   3  3  2  2 M_NMOS_5 W=5U L=5U
+M2   4  5  2  2 M_NMOS_5 W=10U L=5U
+M3  23 26 25 22 M_NMOS_5 W=5U L=5U
+RLK1 3 0 100G
+RLK2 5 0 100G
+VD  3 23 0.0V
+VG  6 26 0.0V
+VS  5 25 0.0V
+VB  2 22 0.0V
+
+M4  7 7 1 1 M_PMOS_IDEAL  W=100U L=1U
+M5  3 7 1 1 M_PMOS_IDEAL  W=100U L=1U
+M6  4 7 1 1 M_PMOS_IDEAL  W=200U L=1U
+IREF 7 0 50UA 
+
+****** MODELS ******
+.MODEL M_PMOS_IDEAL PMOS VTO=-1.0V KP=100U
+
+.INCLUDE BICMOS.LIB
+
+.TRAN 0.1NS 50NS
+
+.OPTIONS ACCT BYPASS=1 METHOD=GEAR
+.END
diff --git a/examples/cider/parallel/cmosamp.cir b/examples/cider/parallel/cmosamp.cir
new file mode 100644
index 000000000..f88115b56
--- /dev/null
+++ b/examples/cider/parallel/cmosamp.cir
@@ -0,0 +1,29 @@
+CMOS 2-STAGE OPERATIONAL AMPLIFIER
+
+VDD 1 0  2.5V
+VSS 2 0 -2.5V
+
+IBIAS 9 0 100UA
+
+VPL 3 0 0.0V AC 0.5V
+VMI 4 0 0.0V AC 0.5V 180
+
+M1  6 3 5 5 M_PMOS_1 W=15U  L=1U
+M2  7 4 5 5 M_PMOS_1 W=15U  L=1U
+M3  6 6 2 2 M_NMOS_1 W=7.5U L=1U
+M4  7 6 2 2 M_NMOS_1 W=7.5U L=1U
+M5  8 7 2 2 M_NMOS_1 W=15U  L=1U
+M6  9 9 1 1 M_PMOS_1 W=15U  L=1U
+M7  5 9 1 1 M_PMOS_1 W=15U  L=1U
+M8  8 9 1 1 M_PMOS_1 W=15U  L=1U
+
+*CC  7 8 0.1PF
+
+.INCLUDE BICMOS.LIB
+
+*.OP
+*.AC DEC 10 1K 100G
+.DC VPL -5MV 5MV 0.1MV
+
+.OPTIONS ACCT BYPASS=1 METHOD=GEAR
+.END
diff --git a/examples/cider/parallel/eclinv.cir b/examples/cider/parallel/eclinv.cir
new file mode 100644
index 000000000..a63c1c14e
--- /dev/null
+++ b/examples/cider/parallel/eclinv.cir
@@ -0,0 +1,30 @@
+ECL INVERTER
+*** (FROM MEINERZHAGEN ET AL.)
+
+VCC 1 0 0.0V
+VEE 2 0 -5.2V
+
+VIN 3 0 -1.25V
+VRF 4 0 -1.25V
+
+*** INPUT STAGE
+Q1 5 3 9 M_NPNS AREA=8
+Q2 6 4 9 M_NPNS AREA=8
+R1 1 5 662
+R2 1 6 662
+R3 9 2 2.65K
+
+*** OUTPUT BUFFERS
+Q3 1 5 7 M_NPNS AREA=8
+Q4 1 6 8 M_NPNS AREA=8
+R4 7 2 4.06K
+R5 8 2 4.06K
+
+*** MODEL LIBRARY
+.INCLUDE BICMOS.LIB
+
+.DC VIN -2.00 0.001 0.05
+.PLOT DC V(7) V(8)
+
+.OPTIONS ACCT BYPASS=1
+.END
diff --git a/examples/cider/parallel/ecpal.cir b/examples/cider/parallel/ecpal.cir
new file mode 100644
index 000000000..4485a4422
--- /dev/null
+++ b/examples/cider/parallel/ecpal.cir
@@ -0,0 +1,19 @@
+EMITTER COUPLED PAIR WITH ACTIVE LOAD
+
+VCC	1 0 5V
+VEE	2 0 0V
+VINP	4 0 2.99925V  AC 0.5V
+VINM	7 0 3V        AC 0.5V 180
+IEE	5 2 0.1MA
+Q1	3 4 5 M_NPNS AREA=8
+Q2	6 7 5 M_NPNS AREA=8
+Q3	3 3 1 M_PNPS AREA=8
+Q4	6 3 1 M_PNPS AREA=8
+
+.AC DEC 10 10K 100G
+.PLOT AC VDB(6)
+
+.INCLUDE BICMOS.LIB
+
+.OPTIONS ACCT RELTOL=1E-6
+.END
diff --git a/examples/cider/parallel/foobar b/examples/cider/parallel/foobar
new file mode 100644
index 000000000..1e5e7b735
--- /dev/null
+++ b/examples/cider/parallel/foobar
@@ -0,0 +1,10 @@
+\section*{BICMPD Benchmark}
+\section*{BICMPU Benchmark}
+\section*{CLKFEED Benchmark}
+\section*{CMOSAMP Benchmark}
+\section*{ECLINV Benchmark}
+\section*{ECPAL Benchmark}
+\section*{GMAMP Benchmark}
+\section*{LATCH Benchmark}
+\section*{PPEF Benchmarks}
+\section*{RINGOSC Benchmarks}
diff --git a/examples/cider/parallel/gmamp.cir b/examples/cider/parallel/gmamp.cir
new file mode 100644
index 000000000..e570becaf
--- /dev/null
+++ b/examples/cider/parallel/gmamp.cir
@@ -0,0 +1,34 @@
+BICMOS 3-STAGE AMPLIFIER
+*** IN GRAY & MEYER, 3RD ED. P.266, PROB. 3.12, 8.19
+
+VDD 1 0 5.0V
+VSS 2 0 0.0V
+
+*** VOLTAGE INPUT
+*VIN 13 0 0.0V AC 1V
+*CIN 13 3 1UF
+
+*** CURRENT INPUT
+IIN 3 0 0.0 AC 1.0
+
+M1  4 3 2 2 M_NMOS_1 W=300U L=1U
+M2  7 7 2 2 M_NMOS_1 W=20U  L=1U
+
+Q1  6 5 4   M_NPNS AREA=40
+Q2  5 5 7   M_NPNS AREA=40
+Q3  1 6 8   M_NPNS AREA=40
+
+RL1 1 4     1K
+RL2 1 6     10K
+RB1 1 5     10K
+RL3 8 2     1K
+RF1 3 8     30K
+
+*** NUMERICAL MODEL LIBRARY ***
+.INCLUDE BICMOS.LIB
+
+.AC DEC 10 100KHZ 100GHZ
+.PLOT AC VDB(8)
+
+.OPTIONS ACCT BYPASS=1 KEEPOPINFO
+.END
diff --git a/examples/cider/parallel/latch.cir b/examples/cider/parallel/latch.cir
new file mode 100644
index 000000000..3ad633351
--- /dev/null
+++ b/examples/cider/parallel/latch.cir
@@ -0,0 +1,46 @@
+STATIC LATCH
+***   IC=1MA, RE6=3K
+***   SPICE ORIGINAL 1-7-80, CIDER REVISED 4-16-93
+
+***   BIAS CIRCUIT
+***   RESISTORS
+RCC2 6 8 3.33K
+REE2 9 0 200
+***   TRANSISTORS
+Q1 6 8 4 M_NPN1D AREA=8
+Q2 8 4 9 M_NPN1D AREA=8
+
+***   MODELS
+.INCLUDE BICMOS.LIB
+
+***   SOURCES
+VCC 6 0 5V
+VREF 3 0 2.5V
+VRSET 1 0 PULSE(2V 3V 0.1NS 0.1NS 0.1NS 0.9NS 4NS)
+VSET  7 0 PULSE(2V 3V 2.1NS 0.1NS 0.1NS 0.9NS 4NS)
+
+***   LATCH
+X1 1 2 3 4 5 6 ECLNOR2
+X2 5 7 3 4 2 6 ECLNOR2
+
+***   SUBCIRCUITS
+.SUBCKT ECLNOR2 1 2 3 4 5 6
+**  RESISTORS
+RS 6 11 520
+RC2 11 10 900
+RE4 12 0 200
+RE6 5 0 6K
+**  TRANSISTORS
+Q1 9 1 8 M_NPN1D AREA=8
+Q2 9 2 8 M_NPN1D AREA=8
+Q3 11 3 8 M_NPN1D AREA=8
+Q4 8 4 12 M_NPN1D AREA=8
+Q5 10 10 9 M_NPN1D AREA=8
+Q6 6 9 5 M_NPN1D AREA=8
+.ENDS ECLNOR2
+
+***   CONTROL CARDS
+.TRAN 0.01NS 8NS
+.PRINT TRAN V(1) V(7) V(5) V(2)
+.OPTIONS ACCT BYPASS=1
+.END
diff --git a/examples/cider/parallel/ppef.1d.cir b/examples/cider/parallel/ppef.1d.cir
new file mode 100644
index 000000000..8690c6653
--- /dev/null
+++ b/examples/cider/parallel/ppef.1d.cir
@@ -0,0 +1,25 @@
+PUSH-PULL EMITTER FOLLOWER - ONE-DIMENSIONAL MODELS
+
+VCC 1 0  5.0V
+VEE 2 0 -5.0V
+
+VIN 3 0  0.0V (SIN 0.0V 0.1V 1KHZ) AC 1
+VBU 13 3 0.7V
+VBL 3 23 0.7V
+
+RL  4 44  50
+VLD 44 0 0V
+
+Q1  5  13 4 M_NPN1D AREA=40
+Q2  4  5  1 M_PNP1D AREA=200
+
+Q3  6  23 4 M_PNP1D AREA=100
+Q4  4  6  2 M_NPN1D AREA=80
+
+.INCLUDE BICMOS.LIB
+
+.TRAN 0.01MS 1.00001MS 0US 0.01MS
+.PLOT TRAN V(4)
+
+.OPTIONS ACCT BYPASS=1 TEMP=26.85OC RELTOL=1E-5
+.END
diff --git a/examples/cider/parallel/ppef.2d.cir b/examples/cider/parallel/ppef.2d.cir
new file mode 100644
index 000000000..07fa10fba
--- /dev/null
+++ b/examples/cider/parallel/ppef.2d.cir
@@ -0,0 +1,25 @@
+PUSH-PULL EMITTER FOLLOWER - TWO-DIMENSIONAL MODELS
+
+VCC 1 0  5.0V
+VEE 2 0 -5.0V
+
+VIN 3 0  0.0V (SIN 0.0V 0.1V 1KHZ) AC 1
+VBU 13 3 0.7V
+VBL 3 23 0.7V
+
+RL  4 44  50
+VLD 44 0 0V
+
+Q1  5  13 4 M_NPNS AREA=40
+Q2  4  5  1 M_PNPS AREA=200
+
+Q3  6  23 4 M_PNPS AREA=100
+Q4  4  6  2 M_NPNS AREA=80
+
+.INCLUDE BICMOS.LIB
+
+.TRAN 0.01MS 1.00001MS 0US 0.01MS
+.PLOT TRAN V(4)
+
+.OPTIONS ACCT BYPASS=1 TEMP=26.85OC RELTOL=1E-5
+.END
diff --git a/examples/cider/parallel/readme b/examples/cider/parallel/readme
new file mode 100644
index 000000000..077c78f6b
--- /dev/null
+++ b/examples/cider/parallel/readme
@@ -0,0 +1,3 @@
+This directory contains the additional CIDER parallel-version benchmarks
+used in the thesis "Design-Oriented Mixed-Level Circuit and Device Simulation"
+by David A. Gates.
diff --git a/examples/cider/parallel/ringosc.1u.cir b/examples/cider/parallel/ringosc.1u.cir
new file mode 100644
index 000000000..2304c4ebd
--- /dev/null
+++ b/examples/cider/parallel/ringosc.1u.cir
@@ -0,0 +1,39 @@
+CMOS RING OSCILLATOR - 1UM DEVICES
+
+VDD 1 0 5.0V
+VSS 2 0 0.0V
+
+X1 1 2 3 4 INV
+X2 1 2 4 5 INV
+X3 1 2 5 6 INV
+X4 1 2 6 7 INV
+X5 1 2 7 8 INV
+X6 1 2 8 9 INV
+X7 1 2 9 3 INV
+
+.IC V(3)=0.0V V(4)=2.5V V(5)=5.0V
++   V(6)=0.0V V(7)=5.0V V(8)=0.0V V(9)=5.0V
+
+.SUBCKT INV 1   2   3   4
+*           VDD VSS VIN VOUT
+M1  14 13 15 16 M_PMOS_1 W=6.0U
+M2  24 23 25 26 M_NMOS_1 W=3.0U
+
+VGP 3 13 0.0V
+VDP 4 14 0.0V
+VSP 1 15 0.0V
+VBP 1 16 0.0V
+
+VGN 3 23 0.0V
+VDN 4 24 0.0V
+VSN 2 25 0.0V
+VBN 2 26 0.0V
+.ENDS INV
+
+.INCLUDE BICMOS.LIB
+
+.TRAN 0.1NS 1NS
+.PRINT TRAN V(3) V(4) V(5)
+
+.OPTIONS ACCT BYPASS=1 METHOD=GEAR
+.END
diff --git a/examples/cider/parallel/ringosc.2u.cir b/examples/cider/parallel/ringosc.2u.cir
new file mode 100644
index 000000000..c79885ab1
--- /dev/null
+++ b/examples/cider/parallel/ringosc.2u.cir
@@ -0,0 +1,114 @@
+CMOS RING OSCILLATOR - 2UM DEVICES
+
+VDD 1 0 5.0V
+VSS 2 0 0.0V
+
+X1 1 2 3 4 INV
+X2 1 2 4 5 INV
+X3 1 2 5 6 INV
+X4 1 2 6 7 INV
+X5 1 2 7 8 INV
+X6 1 2 8 9 INV
+X7 1 2 9 3 INV
+
+.IC V(3)=0.0V V(4)=2.5V V(5)=5.0V V(6)=0.0V
++ V(7)=5.0V V(8)=0.0V V(9)=5.0V
+
+.SUBCKT INV 1   2   3   4
+*           VDD VSS VIN VOUT
+M1  14 13 15 16 M_PMOS W=6.0U
+M2  24 23 25 26 M_NMOS W=3.0U
+
+VGP 3 13 0.0V
+VDP 4 14 0.0V
+VSP 1 15 0.0V
+VBP 1 16 0.0V
+
+VGN 3 23 0.0V
+VDN 4 24 0.0V
+VSN 2 25 0.0V
+VBN 2 26 0.0V
+.ENDS INV
+
+.MODEL M_NMOS NUMOS
++ X.MESH L=0.0 N=1
++ X.MESH L=0.6 N=4
++ X.MESH L=0.7 N=5
++ X.MESH L=1.0 N=7
++ X.MESH L=1.2 N=11
++ X.MESH L=3.2 N=21
++ X.MESH L=3.4 N=25
++ X.MESH L=3.7 N=27
++ X.MESH L=3.8 N=28
++ X.MESH L=4.4 N=31
++
++ Y.MESH L=-.05 N=1
++ Y.MESH L=0.0  N=5
++ Y.MESH L=.05  N=9
++ Y.MESH L=0.3  N=14
++ Y.MESH L=2.0  N=19
++
++ REGION NUM=1 MATERIAL=1 Y.L=0.0
++ MATERIAL NUM=1 SILICON
++ MOBILITY MATERIAL=1 CONCMOD=SG FIELDMOD=SG
++
++ REGION NUM=2 MATERIAL=2 Y.H=0.0 X.L=0.7 X.H=3.7
++ MATERIAL NUM=2 OXIDE
++
++ ELEC NUM=1 X.L=3.8 X.H=4.4	Y.L=0.0 Y.H=0.0
++ ELEC NUM=2 X.L=0.7 X.H=3.7	IY.L=1  IY.H=1
++ ELEC NUM=3 X.L=0.0 X.H=0.6	Y.L=0.0 Y.H=0.0
++ ELEC NUM=4 X.L=0.0 X.H=4.4	Y.L=2.0 Y.H=2.0
++
++ DOPING UNIF P.TYPE CONC=2.5E16 X.L=0.0 X.H=4.4  Y.L=0.0 Y.H=2.0
++ DOPING UNIF P.TYPE CONC=1E16   X.L=0.0 X.H=4.4  Y.L=0.0 Y.H=0.05
++ DOPING UNIF N.TYPE CONC=1E20   X.L=0.0 X.H=1.1  Y.L=0.0 Y.H=0.2
++ DOPING UNIF N.TYPE CONC=1E20   X.L=3.3 X.H=4.4  Y.L=0.0 Y.H=0.2
++
++ MODELS CONCMOB FIELDMOB BGN SRH CONCTAU
++ METHOD AC=DIRECT ONEC
++ OUTPUT ^ALL.DEBUG
+
+.MODEL M_PMOS NUMOS
++ X.MESH L=0.0 N=1
++ X.MESH L=0.6 N=4
++ X.MESH L=0.7 N=5
++ X.MESH L=1.0 N=7
++ X.MESH L=1.2 N=11
++ X.MESH L=3.2 N=21
++ X.MESH L=3.4 N=25
++ X.MESH L=3.7 N=27
++ X.MESH L=3.8 N=28
++ X.MESH L=4.4 N=31
++
++ Y.MESH L=-.05 N=1
++ Y.MESH L=0.0  N=5
++ Y.MESH L=.05  N=9
++ Y.MESH L=0.3  N=14
++ Y.MESH L=2.0  N=19
++
++ REGION NUM=1 MATERIAL=1 Y.L=0.0
++ MATERIAL NUM=1 SILICON
++ MOBILITY MATERIAL=1 CONCMOD=SG FIELDMOD=SG
++
++ REGION NUM=2 MATERIAL=2 Y.H=0.0 X.L=0.7 X.H=3.7
++ MATERIAL NUM=2 OXIDE
++
++ ELEC NUM=1 X.L=3.8 X.H=4.4	Y.L=0.0 Y.H=0.0
++ ELEC NUM=2 X.L=0.7 X.H=3.7	IY.L=1  IY.H=1
++ ELEC NUM=3 X.L=0.0 X.H=0.6	Y.L=0.0 Y.H=0.0
++ ELEC NUM=4 X.L=0.0 X.H=4.4	Y.L=2.0 Y.H=2.0
++
++ DOPING UNIF N.TYPE CONC=1E16   X.L=0.0 X.H=4.4  Y.L=0.0 Y.H=2.0
++ DOPING UNIF P.TYPE CONC=3E16   X.L=0.0 X.H=4.4  Y.L=0.0 Y.H=0.05
++ DOPING UNIF P.TYPE CONC=1E20   X.L=0.0 X.H=1.1  Y.L=0.0 Y.H=0.2
++ DOPING UNIF P.TYPE CONC=1E20   X.L=3.3 X.H=4.4  Y.L=0.0 Y.H=0.2
++
++ MODELS CONCMOB FIELDMOB BGN SRH CONCTAU
++ METHOD AC=DIRECT ONEC
++ OUTPUT ^ALL.DEBUG
+
+.TRAN 0.1NS 5.0NS
+.PRINT V(4)
+.OPTIONS ACCT BYPASS=1 METHOD=GEAR
+.END
diff --git a/examples/cider/resistor/gaasres.cir b/examples/cider/resistor/gaasres.cir
new file mode 100644
index 000000000..c35d0ddc0
--- /dev/null
+++ b/examples/cider/resistor/gaasres.cir
@@ -0,0 +1,30 @@
+Gallium Arsenide Resistor
+
+* This transient simulation demonstrates the effects of velocity overshoot
+* and velocity saturation at high lateral electric fields.
+* Do not try to do DC analysis of this resistor. It will not converge
+* because of the peculiar characteristics of the GaAs velocity-field
+* relation.  In some cases, problems can arise in transient simulation
+* as well.
+
+VPP 1 0 1v PWL 0s 0.0v 10s 1v
+VNN 2 0 0.0v 
+D1 1 2 M_RES AREA=1
+
+.MODEL M_RES numd level=1
++ options resistor defa=1p
++ x.mesh loc=0.0 num=1
++ x.mesh loc=1.0 num=101
++ domain   num=1 material=1
++ material num=1 gaas
++ doping unif n.type conc=2.5e16
++ models fieldmob srh auger conctau
++ method ac=direct
+
+*.OP
+*.DC VPP 0.0v 10.01v 0.1v
+.TRAN 1s 10.001s 0s 0.1s
+.PRINT I(VPP)
+
+.OPTION ACCT BYPASS=1
+.END
diff --git a/examples/cider/resistor/sires.cir b/examples/cider/resistor/sires.cir
new file mode 100644
index 000000000..45e2aa12a
--- /dev/null
+++ b/examples/cider/resistor/sires.cir
@@ -0,0 +1,26 @@
+Silicon Resistor
+
+* This simulation demonstrates the effects of velocity saturation at
+* high lateral electric fields.
+
+VPP 1 0 10v PWL 0s 0.0v 100s 10v
+VNN 2 0 0.0v 
+D1 1 2 M_RES AREA=1
+
+.MODEL M_RES numd level=1
++ options resistor defa=1p
++ x.mesh loc=0.0 num=1
++ x.mesh loc=1.0 num=101
++ domain   num=1 material=1
++ material num=1 silicon
++ doping unif n.type conc=2.5e16
++ models bgn srh conctau auger concmob fieldmob
++ method ac=direct
+
+*.OP
+.DC VPP 0.0v 10.01v 0.1v
+*.TRAN 1s 100.001s 0s 0.2s
+.PRINT I(VPP)
+
+.OPTION ACCT BYPASS=1 RELTOL=1e-12
+.END
diff --git a/examples/cider/serial/astable.cir b/examples/cider/serial/astable.cir
new file mode 100644
index 000000000..c04c6bba8
--- /dev/null
+++ b/examples/cider/serial/astable.cir
@@ -0,0 +1,30 @@
+ASTABLE MULTIVIBRATOR
+
+VIN 5 0 DC 0 PULSE(0 5 0 1US 1US 100US 100US)
+VCC 6 0 5.0
+RC1 6 1 1K
+RC2 6 2 1K
+RB1 6 3 30K
+RB2 5 4 30K
+C1 1 4 150PF
+C2 2 3 150PF
+Q1 1 3 0 QMOD AREA = 100P
+Q2 2 4 0 QMOD AREA = 100P
+
+.OPTION ACCT BYPASS=1
+.TRAN 0.05US 8US 0US 0.05US
+.PRINT TRAN V(1) V(2) V(3) V(4)
+
+.MODEL QMOD NBJT LEVEL=1
++ X.MESH NODE=1  LOC=0.0
++ X.MESH NODE=61 LOC=3.0
++ REGION NUM=1 MATERIAL=1
++ MATERIAL NUM=1 SILICON NBGNN=1E17 NBGNP=1E17
++ MOBILITY MATERIAL=1 CONCMOD=SG FIELDMOD=SG
++ DOPING UNIF N.TYPE CONC=1E17 X.L=0.0 X.H=1.0
++ DOPING UNIF P.TYPE CONC=1E16 X.L=0.0 X.H=1.5
++ DOPING UNIF N.TYPE CONC=1E15 X.L=0.0 X.H=3.0
++ MODELS BGNW SRH CONCTAU AUGER CONCMOB FIELDMOB
++ OPTIONS BASE.LENGTH=1.0 BASE.DEPTH=1.25
+
+.END
diff --git a/examples/cider/serial/charge.cir b/examples/cider/serial/charge.cir
new file mode 100644
index 000000000..c4c689b66
--- /dev/null
+++ b/examples/cider/serial/charge.cir
@@ -0,0 +1,53 @@
+MOS CHARGE PUMP
+
+VIN 4 0 DC 0V PULSE 0 5 15NS 5NS 5NS 50NS 100NS
+VDD 5 6 DC 0V PULSE 0 5 25NS 5NS 5NS 50NS 100NS
+VBB 0 7 DC 0V PULSE 0 5  0NS 5NS 5NS 50NS 100NS
+RD 6 2 10K
+M1 5 4 3 7 MMOD W=100UM
+VS 3 2 0
+VC 2 1 0
+C2 1 0 10PF
+
+.IC V(3)=1.0
+.TRAN 2NS 200NS
+.OPTIONS ACCT BYPASS=1
+.PRINT TRAN V(1) V(2)
+
+.MODEL MMOD NUMOS
++ X.MESH N=1 L=0
++ X.MESH N=3 L=0.4
++ X.MESH N=7 L=0.6
++ X.MESH N=15 L=1.4
++ X.MESH N=19 L=1.6
++ X.MESH N=21 L=2.0
++
++ Y.MESH N=1 L=0
++ Y.MESH N=4 L=0.015
++ Y.MESH N=8 L=0.05
++ Y.MESH N=12 L=0.25
++ Y.MESH N=14 L=0.35
++ Y.MESH N=17 L=0.5
++ Y.MESH N=21 L=1.0
++
++ REGION NUM=1 MATERIAL=1 Y.L=0.015
++ MATERIAL NUM=1 SILICON
++ MOBILITY MATERIAL=1 CONCMOD=SG FIELDMOD=SG
++
++ REGION NUM=2 MATERIAL=2 Y.H=0.015 X.L=0.5 X.H=1.5
++ MATERIAL NUM=2 OXIDE
++
++ ELEC NUM=1 IX.L=18 IX.H=21   IY.L=4  IY.H=4
++ ELEC NUM=2 IX.L=5  IX.H=17   IY.L=1  IY.H=1
++ ELEC NUM=3 IX.L=1  IX.H=4    IY.L=4  IY.H=4
++ ELEC NUM=4 IX.L=1  IX.H=21   IY.L=21 IY.H=21
++
++ DOPING UNIF N.TYPE CONC=1E18   X.L=0.0 X.H=0.5 Y.L=0.015 Y.H=0.25
++ DOPING UNIF N.TYPE CONC=1E18   X.L=1.5 X.H=2.0 Y.L=0.015 Y.H=0.25
++ DOPING UNIF P.TYPE CONC=1E15   X.L=0.0 X.H=2.0 Y.L=0.015 Y.H=1.0
++ DOPING UNIF P.TYPE CONC=1.3E17 X.L=0.5 X.H=1.5 Y.L=0.015 Y.H=0.05
++
++ MODELS CONCMOB FIELDMOB
++ METHOD ONEC
+
+.END
diff --git a/examples/cider/serial/colposc.cir b/examples/cider/serial/colposc.cir
new file mode 100644
index 000000000..b7d14ce91
--- /dev/null
+++ b/examples/cider/serial/colposc.cir
@@ -0,0 +1,29 @@
+COLPITT'S OSCILLATOR CIRCUIT
+
+R1 1 0 1
+Q1 2 1 3 QMOD AREA = 100P
+VCC 4 0 5 
+RL 4 2 750
+C1 2 3 500P
+C2 4 3 4500P
+L1 4 2 5UH
+RE 3 6 4.65K
+VEE 6 0 DC -15 PWL 0 -15 1E-9 -10 
+
+.TRAN 30N 12U
+.PRINT TRAN V(2)
+
+.MODEL QMOD NBJT LEVEL=1
++ X.MESH NODE=1  LOC=0.0
++ X.MESH NODE=61 LOC=3.0
++ REGION NUM=1 MATERIAL=1
++ MATERIAL NUM=1 SILICON NBGNN=1E17 NBGNP=1E17
++ MOBILITY MATERIAL=1 CONCMOD=SG FIELDMOD=SG
++ DOPING UNIF N.TYPE CONC=1E17 X.L=0.0 X.H=1.0
++ DOPING UNIF P.TYPE CONC=1E16 X.L=0.0 X.H=1.5
++ DOPING UNIF N.TYPE CONC=1E15 X.L=0.0 X.H=3.0
++ MODELS BGNW SRH CONCTAU AUGER CONCMOB FIELDMOB
++ OPTIONS BASE.LENGTH=1.0 BASE.DEPTH=1.25
+
+.OPTIONS ACCT BYPASS=1
+.END
diff --git a/examples/cider/serial/dbridge.cir b/examples/cider/serial/dbridge.cir
new file mode 100644
index 000000000..052ae4f07
--- /dev/null
+++ b/examples/cider/serial/dbridge.cir
@@ -0,0 +1,30 @@
+DIODE BRIDGE RECTIFIER
+
+VLINE 3 4 0.0V SIN 0V 10V 60HZ
+VGRND 2 0 0.0V 
+D1 3 1 M_PN AREA=100
+D2 4 1 M_PN AREA=100
+D3 2 3 M_PN AREA=100
+D4 2 4 M_PN AREA=100
+RL 1 2 1.0K
+
+.MODEL M_PN NUMD LEVEL=1
++ ***************************************
++ *** ONE-DIMENSIONAL NUMERICAL DIODE ***
++ ***************************************
++ OPTIONS DEFA=1P
++ X.MESH LOC=0.0 N=1
++ X.MESH LOC=30.0 N=201
++ DOMAIN   NUM=1 MATERIAL=1
++ MATERIAL NUM=1 SILICON
++ MOBILITY MAT=1 CONCMOD=CT FIELDMOD=CT
++ DOPING GAUSS P.TYPE CONC=1E20 X.L=0.0  X.H=0.0 CHAR.L=1.0
++ DOPING UNIF  N.TYPE CONC=1E14 X.L=0.0  X.H=30.0
++ DOPING GAUSS N.TYPE CONC=5E19 X.L=30.0  X.H=30.0 CHAR.L=2.0 
++ MODELS BGN ^AVAL SRH AUGER CONCTAU CONCMOB FIELDMOB
++ METHOD AC=DIRECT
+
+.OPTION ACCT BYPASS=1 METHOD=GEAR
+.TRAN 0.5MS 50MS
+.PRINT I(VLINE)
+.END
diff --git a/examples/cider/serial/invchain.cir b/examples/cider/serial/invchain.cir
new file mode 100644
index 000000000..c05513a0d
--- /dev/null
+++ b/examples/cider/serial/invchain.cir
@@ -0,0 +1,34 @@
+4 STAGE RTL INVERTER CHAIN
+
+VIN 1 0 DC 0V PWL 0NS 0V 1NS 5V
+VCC 12 0 DC 5.0V
+RC1 12 3 2.5K
+RB1 1 2 8K
+Q1 3 2 0 QMOD AREA = 100P
+RB2 3 4 8K
+RC2 12 5 2.5K
+Q2 5 4 0 QMOD AREA = 100P
+RB3 5 6 8K
+RC3 12 7 2.5K
+Q3 7 6 0 QMOD AREA = 100P
+RB4 7 8 8K
+RC4 12 9 2.5K
+Q4 9 8 0 QMOD AREA = 100P
+
+.PRINT TRAN V(3) V(5) V(9)
+.TRAN 1E-9 10E-9
+
+.MODEL QMOD NBJT LEVEL=1
++ X.MESH NODE=1  LOC=0.0
++ X.MESH NODE=61 LOC=3.0
++ REGION NUM=1 MATERIAL=1
++ MATERIAL NUM=1 SILICON NBGNN=1E17 NBGNP=1E17
++ MOBILITY MATERIAL=1 CONCMOD=SG FIELDMOD=SG
++ DOPING UNIF N.TYPE CONC=1E17 X.L=0.0 X.H=1.0
++ DOPING UNIF P.TYPE CONC=1E16 X.L=0.0 X.H=1.5
++ DOPING UNIF N.TYPE CONC=1E15 X.L=0.0 X.H=3.0
++ MODELS BGNW SRH CONCTAU AUGER CONCMOB FIELDMOB
++ OPTIONS BASE.LENGTH=1.0 BASE.DEPTH=1.25
+
+.OPTION ACCT BYPASS=1
+.END
diff --git a/examples/cider/serial/meclgate.cir b/examples/cider/serial/meclgate.cir
new file mode 100644
index 000000000..7f5e88ba2
--- /dev/null
+++ b/examples/cider/serial/meclgate.cir
@@ -0,0 +1,70 @@
+MOTOROLA MECL III ECL GATE
+*.DC VIN -2.0 0 0.02
+.TRAN 0.2NS 20NS
+VEE 22 0 -6.0
+VIN 1 0 PULSE -0.8 -1.8 0.2NS 0.2NS 0.2NS 10NS 20NS
+RS 1 2 50
+Q1 4 2 6 QMOD AREA = 100P
+Q2 4 3 6 QMOD AREA = 100P
+Q3 5 7 6 QMOD AREA = 100P
+Q4 0 8 7 QMOD AREA = 100P
+
+D1 8 9 DMOD
+D2 9 10 DMOD
+
+RP1 3 22 50K
+RC1 0 4 100
+RC2 0 5 112
+RE 6 22 380
+R1 7 22 2K
+R2 0 8 350
+R3 10 22 1958
+
+Q5 0 5 11 QMOD AREA = 100P
+Q6 0 4 12 QMOD AREA = 100P
+
+RP2 11 22 560
+RP3 12 22 560
+
+Q7 13 12 15 QMOD AREA = 100P
+Q8 14 16 15 QMOD AREA = 100P
+
+RE2 15 22 380
+RC3 0 13 100
+RC4 0 14 112
+
+Q9 0 17 16 QMOD AREA = 100P
+
+R4 16 22 2K
+R5 0 17 350
+D3 17 18 DMOD
+D4 18 19 DMOD
+R6 19 22 1958
+
+Q10 0 14 20 QMOD AREA = 100P
+Q11 0 13 21 QMOD AREA = 100P
+
+RP4 20 22 560
+RP5 21 22 560
+
+.MODEL DMOD D RS=40 TT=0.1NS CJO=0.9PF N=1 IS=1E-14 EG=1.11 VJ=0.8 M=0.5
+
+.MODEL QMOD NBJT LEVEL=1
++ X.MESH NODE=1  LOC=0.0
++ X.MESH NODE=10 LOC=0.9
++ X.MESH NODE=20 LOC=1.1
++ X.MESH NODE=30 LOC=1.4
++ X.MESH NODE=40 LOC=1.6
++ X.MESH NODE=61 LOC=3.0
++ REGION NUM=1 MATERIAL=1
++ MATERIAL NUM=1 SILICON NBGNN=1E17 NBGNP=1E17
++ MOBILITY MATERIAL=1 CONCMOD=SG FIELDMOD=SG
++ DOPING UNIF N.TYPE CONC=1E17 X.L=0.0 X.H=1.0
++ DOPING UNIF P.TYPE CONC=1E16 X.L=0.0 X.H=1.5
++ DOPING UNIF N.TYPE CONC=1E15 X.L=0.0 X.H=3.0
++ MODELS BGNW SRH CONCTAU AUGER CONCMOB FIELDMOB
++ OPTIONS BASE.LENGTH=1.0 BASE.DEPTH=1.25
+
+.OPTIONS ACCT BYPASS=1
+.PRINT TRAN V(12) V(21)
+.END
diff --git a/examples/cider/serial/nmosinv.cir b/examples/cider/serial/nmosinv.cir
new file mode 100644
index 000000000..b6fa11ab6
--- /dev/null
+++ b/examples/cider/serial/nmosinv.cir
@@ -0,0 +1,51 @@
+RESISTIVE LOAD NMOS INVERTER
+VIN 1 0 PWL 0 0.0 2NS 5
+VDD 3 0 DC 5.0
+RD 3 2 2.5K
+M1 2 1 4 5 MMOD W=10UM
+CL 2 0 2PF
+VB 5 0 0
+VS 4 0 0
+
+.MODEL MMOD NUMOS
++ X.MESH L=0.0 N=1
++ X.MESH L=0.6 N=4
++ X.MESH L=0.7 N=5
++ X.MESH L=1.0 N=7
++ X.MESH L=1.2 N=11
++ X.MESH L=3.2 N=21
++ X.MESH L=3.4 N=25
++ X.MESH L=3.7 N=27
++ X.MESH L=3.8 N=28
++ X.MESH L=4.4 N=31
++
++ Y.MESH L=-.05 N=1
++ Y.MESH L=0.0  N=5
++ Y.MESH L=.05  N=9
++ Y.MESH L=0.3  N=14
++ Y.MESH L=2.0  N=19
++
++ REGION NUM=1 MATERIAL=1 Y.L=0.0
++ MATERIAL NUM=1 SILICON
++ MOBILITY MATERIAL=1 CONCMOD=SG FIELDMOD=SG
++
++ REGION NUM=2 MATERIAL=2 Y.H=0.0 X.L=0.7 X.H=3.7
++ MATERIAL NUM=2 OXIDE
++
++ ELEC NUM=1 X.L=3.8 X.H=4.4	Y.L=0.0 Y.H=0.0
++ ELEC NUM=2 X.L=0.7 X.H=3.7	IY.L=1  IY.H=1
++ ELEC NUM=3 X.L=0.0 X.H=0.6	Y.L=0.0 Y.H=0.0
++ ELEC NUM=4 X.L=0.0 X.H=4.4	Y.L=2.0 Y.H=2.0
++
++ DOPING UNIF P.TYPE CONC=2.5E16 X.L=0.0 X.H=4.4  Y.L=0.0 Y.H=2.0
++ DOPING UNIF P.TYPE CONC=1E16   X.L=0.0 X.H=4.4  Y.L=0.0 Y.H=0.05
++ DOPING UNIF N.TYPE CONC=1E20   X.L=0.0 X.H=1.1  Y.L=0.0 Y.H=0.2
++ DOPING UNIF N.TYPE CONC=1E20   X.L=3.3 X.H=4.4  Y.L=0.0 Y.H=0.2
++
++ MODELS CONCMOB FIELDMOB
++ METHOD AC=DIRECT ONEC
+
+.TRAN 0.2NS 30NS
+.OPTIONS ACCT BYPASS=1
+.PRINT TRAN V(1) V(2)
+.END
diff --git a/examples/cider/serial/pass.cir b/examples/cider/serial/pass.cir
new file mode 100644
index 000000000..a15a6f61e
--- /dev/null
+++ b/examples/cider/serial/pass.cir
@@ -0,0 +1,55 @@
+TURNOFF TRANSIENT OF PASS TRANSISTOR
+
+M1 11 2 3 4 MMOD W=20UM
+CS 1 0 6.0PF
+CL 3 0 6.0PF
+R1 3 6 200K
+VIN 6 0 DC 0
+VDRN 1 11 DC 0
+VG 2 0 DC 5 PWL 0 5 0.1N 0 1 0
+VB 4 0 DC 0.0
+
+.TRAN 0.05NS 0.2NS 0.0NS 0.05NS
+.PRINT TRAN V(1) I(VDRN)
+.IC V(1)=0 V(3)=0
+.OPTION ACCT BYPASS=1
+
+.MODEL MMOD NUMOS
++ X.MESH L=0.0 N=1
++ X.MESH L=0.6 N=4
++ X.MESH L=0.7 N=5
++ X.MESH L=1.0 N=7
++ X.MESH L=1.2 N=11
++ X.MESH L=3.2 N=21
++ X.MESH L=3.4 N=25
++ X.MESH L=3.7 N=27
++ X.MESH L=3.8 N=28
++ X.MESH L=4.4 N=31
++
++ Y.MESH L=-.05 N=1
++ Y.MESH L=0.0  N=5
++ Y.MESH L=.05  N=9
++ Y.MESH L=0.3  N=14
++ Y.MESH L=2.0  N=19
++
++ REGION NUM=1 MATERIAL=1 Y.L=0.0
++ MATERIAL NUM=1 SILICON
++ MOBILITY MATERIAL=1 CONCMOD=SG FIELDMOD=SG
++
++ REGION NUM=2 MATERIAL=2 Y.H=0.0 X.L=0.7 X.H=3.7
++ MATERIAL NUM=2 OXIDE
++
++ ELEC NUM=1 X.L=3.8 X.H=4.4	Y.L=0.0 Y.H=0.0
++ ELEC NUM=2 X.L=0.7 X.H=3.7	IY.L=1  IY.H=1
++ ELEC NUM=3 X.L=0.0 X.H=0.6	Y.L=0.0 Y.H=0.0
++ ELEC NUM=4 X.L=0.0 X.H=4.4	Y.L=2.0 Y.H=2.0
++
++ DOPING UNIF P.TYPE CONC=2.5E16 X.L=0.0 X.H=4.4  Y.L=0.0 Y.H=2.0
++ DOPING UNIF P.TYPE CONC=1E16   X.L=0.0 X.H=4.4  Y.L=0.0 Y.H=0.05
++ DOPING UNIF N.TYPE CONC=1E20   X.L=0.0 X.H=1.1  Y.L=0.0 Y.H=0.2
++ DOPING UNIF N.TYPE CONC=1E20   X.L=3.3 X.H=4.4  Y.L=0.0 Y.H=0.2
++
++ MODELS CONCMOB FIELDMOB
++ METHOD AC=DIRECT ONEC
+
+.END
diff --git a/examples/cider/serial/pullup.cir b/examples/cider/serial/pullup.cir
new file mode 100644
index 000000000..a4d7a4d15
--- /dev/null
+++ b/examples/cider/serial/pullup.cir
@@ -0,0 +1,67 @@
+BICMOS INVERTER PULLUP CIRCUIT
+
+VDD 1 0 5.0V
+VSS 2 0 0.0V
+
+VIN 3 0 0.75V
+
+VC  1 11 0.0V
+VB  5 15 0.0V
+
+Q1  11 15 4 M_NPN  AREA=4
+M1  5 3 1 1 M_PMOS W=20U L=2U AD=30P AS=30P PD=21U PS=21U
+
+CL  4 0 5.0PF
+
+.IC V(4)=0.75V V(5)=0.0V
+
+.MODEL M_PMOS PMOS VTO=-0.8 UO=250 TOX=25N NSUB=5E16
++ UCRIT=10K UEXP=.15 VMAX=50K NEFF=2 XJ=.02U
++ LD=.15U CGSO=.1N CGDO=.1N CJ=.12M MJ=0.5
++ CJSW=0.3N MJSW=0.5 LEVEL=2
+
+.MODEL M_NPN NBJT LEVEL=2
++ TITLE TWO-DIMENSIONAL NUMERICAL POLYSILICON EMITTER BIPOLAR TRANSISTOR
++ $ SINCE ONLY HALF THE DEVICE IS SIMULATED, DOUBLE THE UNIT WIDTH TO GET
++ $ 1.0 UM EMITTER.
++ OPTIONS DEFW=2.0U
++ OUTPUT STATISTICS
++ 
++ X.MESH W=2.0 H.E=0.02 H.M=0.5 R=2.0
++ X.MESH W=0.5 H.S=0.02 H.M=0.2 R=2.0
++ 
++ Y.MESH L=-0.2 N=1
++ Y.MESH L= 0.0 N=5
++ Y.MESH W=0.10 H.E=0.004 H.M=0.05  R=2.5
++ Y.MESH W=0.15 H.S=0.004 H.M=0.02  R=2.5
++ Y.MESH W=1.05 H.S=0.02  H.M=0.1   R=2.5
++
++ DOMAIN NUM=1 MATERIAL=1 X.L=2.0 Y.H=0.0
++ DOMAIN NUM=2 MATERIAL=2 X.H=2.0 Y.H=0.0
++ DOMAIN NUM=3 MATERIAL=3 Y.L=0.0
++ MATERIAL NUM=1 POLYSILICON
++ MATERIAL NUM=2 OXIDE
++ MATERIAL NUM=3 SILICON
++
++ ELEC NUM=1 X.L=0.0  X.H=0.0  Y.L=1.1  Y.H=1.3
++ ELEC NUM=2 X.L=0.0  X.H=0.5  Y.L=0.0  Y.H=0.0
++ ELEC NUM=3 X.L=2.0  X.H=3.0  Y.L=-0.2 Y.H=-0.2
++
++ DOPING GAUSS N.TYPE CONC=3E20 X.L=2.0 X.H=3.0 Y.L=-0.2 Y.H=0.0
++ + CHAR.L=0.047 LAT.ROTATE
++ DOPING GAUSS P.TYPE CONC=5E18 X.L=0.0 X.H=5.0 Y.L=-0.2 Y.H=0.0
++ + CHAR.L=0.100 LAT.ROTATE
++ DOPING GAUSS P.TYPE CONC=1E20 X.L=0.0 X.H=0.5 Y.L=-0.2 Y.H=0.0
++ + CHAR.L=0.100 LAT.ROTATE RATIO=0.7
++ DOPING UNIF  N.TYPE CONC=1E16 X.L=0.0 X.H=5.0 Y.L=0.0 Y.H=1.3
++ DOPING GAUSS N.TYPE CONC=5E19 X.L=0.0 X.H=5.0 Y.L=1.3 Y.H=1.3
++ + CHAR.L=0.100 LAT.ROTATE
++
++ METHOD AC=DIRECT ITLIM=10
++ MODELS BGN SRH AUGER CONCTAU CONCMOB FIELDMOB
+
+.TRAN 0.5NS 4.0NS
+.PRINT TRAN V(3) V(4)
+
+.OPTION ACCT BYPASS=1
+.END
diff --git a/examples/cider/serial/readme b/examples/cider/serial/readme
new file mode 100644
index 000000000..08f293041
--- /dev/null
+++ b/examples/cider/serial/readme
@@ -0,0 +1,3 @@
+This directory contains the CIDER serial-version benchmarks used in the
+thesis "Design-Oriented Mixed-Level Circuit and Device Simulation" by
+David A. Gates.
diff --git a/examples/cider/serial/recovery.cir b/examples/cider/serial/recovery.cir
new file mode 100644
index 000000000..cd33be1e0
--- /dev/null
+++ b/examples/cider/serial/recovery.cir
@@ -0,0 +1,40 @@
+DIODE REVERSE RECOVERY
+
+VPP 1 0 0.0V (PULSE 1.0V -1.0V 1NS 1PS 1PS 20NS 40NS)
+VNN 2 0 0.0V
+RS  1 3 1.0
+LS  3 4 0.5UH
+DT  4 2 M_PIN AREA=1
+
+.MODEL M_PIN NUMD LEVEL=2
++ OPTIONS DEFW=100U
++ X.MESH N=1 L=0.0
++ X.MESH N=2 L=0.2
++ X.MESH N=4 L=0.4
++ X.MESH N=8 L=0.6
++ X.MESH N=13 L=1.0
++
++ Y.MESH N=1 L=0.0
++ Y.MESH N=9 L=4.0
++ Y.MESH N=24 L=10.0
++ Y.MESH N=29 L=15.0
++ Y.MESH N=34 L=20.0
++
++ DOMAIN NUM=1 MATERIAL=1
++ MATERIAL NUM=1 SILICON TN=20NS TP=20NS
++
++ ELECTRODE NUM=1 X.L=0.6 X.H=1.0 Y.L=0.0 Y.H=0.0
++ ELECTRODE NUM=2 X.L=-0.1 X.H=1.0 Y.L=20.0 Y.H=20.0
++
++ DOPING GAUSS P.TYPE CONC=1.0E19 CHAR.LEN=1.076 X.L=0.75 X.H=1.1 Y.H=0.0
++ + LAT.ROTATE RATIO=0.1
++ DOPING UNIF  N.TYPE CONC=1.0E14
++ DOPING GAUSS N.TYPE CONC=1.0E19 CHAR.LEN=1.614 X.L=-0.1 X.H=1.1 Y.L=20.0
++
++ MODELS BGN SRH AUGER CONCTAU CONCMOB FIELDMOB
+
+.OPTION ACCT BYPASS=1
+.TRAN 0.1NS 10NS
+.PRINT TRAN V(3) I(VIN)
+
+.END
diff --git a/examples/cider/serial/rtlinv.cir b/examples/cider/serial/rtlinv.cir
new file mode 100644
index 000000000..ef0dd94d5
--- /dev/null
+++ b/examples/cider/serial/rtlinv.cir
@@ -0,0 +1,25 @@
+RTL INVERTER
+
+VIN 1 0 DC 1 PWL 0 4 1NS 0
+VCC 12 0 DC 5.0
+RC1 12 3 2.5K
+RB1 1 2 8K
+Q1 3 2 0 QMOD AREA = 100P
+
+.OPTION ACCT BYPASS=1
+.TRAN 0.5N 5N
+.PRINT TRAN V(2) V(3)
+
+.MODEL QMOD NBJT LEVEL=1
++ X.MESH NODE=1  LOC=0.0
++ X.MESH NODE=61 LOC=3.0
++ REGION NUM=1 MATERIAL=1
++ MATERIAL NUM=1 SILICON NBGNN=1E17 NBGNP=1E17
++ MOBILITY MATERIAL=1 CONCMOD=SG FIELDMOD=SG
++ DOPING UNIF N.TYPE CONC=1E17 X.L=0.0 X.H=1.0
++ DOPING UNIF P.TYPE CONC=1E16 X.L=0.0 X.H=1.5
++ DOPING UNIF N.TYPE CONC=1E15 X.L=0.0 X.H=3.0
++ MODELS BGNW SRH CONCTAU AUGER CONCMOB FIELDMOB
++ OPTIONS BASE.LENGTH=1.0 BASE.DEPTH=1.25
+
+.END
diff --git a/examples/cider/serial/vco.cir b/examples/cider/serial/vco.cir
new file mode 100644
index 000000000..852ddd7f6
--- /dev/null
+++ b/examples/cider/serial/vco.cir
@@ -0,0 +1,41 @@
+VOLTAGE CONTROLLED OSCILLATOR
+
+RC1 7 5 1K
+RC2 7 6 1K
+
+Q5 7 7 5 QMOD AREA = 100P
+Q6 7 7 6 QMOD AREA = 100P
+
+Q3 7 5 2 QMOD AREA = 100P
+Q4 7 6 1 QMOD AREA = 100P
+
+IB1 2 0 .5MA
+IB2 1 0 .5MA
+CB1 2 0 1PF
+CB2 1 0 1PF
+
+Q1 5 1 3 QMOD AREA = 100P
+Q2 6 2 4 QMOD AREA = 100P
+
+C1 3 4 .1UF 
+
+IS1 3 0 DC 2.5MA PULSE 2.5MA 0.5MA 0 1US 1US 50MS
+IS2 4 0 1MA
+VCC 7 0 10
+
+.MODEL QMOD NBJT LEVEL=1
++ X.MESH NODE=1  LOC=0.0
++ X.MESH NODE=61 LOC=3.0
++ REGION NUM=1 MATERIAL=1
++ MATERIAL NUM=1 SILICON NBGNN=1E17 NBGNP=1E17
++ MOBILITY MATERIAL=1 CONCMOD=SG FIELDMOD=SG
++ DOPING UNIF N.TYPE CONC=1E17 X.L=0.0 X.H=1.0
++ DOPING UNIF P.TYPE CONC=1E16 X.L=0.0 X.H=1.5
++ DOPING UNIF N.TYPE CONC=1E15 X.L=0.0 X.H=3.0
++ MODELS BGNW SRH CONCTAU AUGER CONCMOB FIELDMOB
++ OPTIONS BASE.LENGTH=1.0 BASE.DEPTH=1.25
+
+.OPTION ACCT BYPASS=1 
+.TRAN 3US 600US 0 3US
+.PRINT TRAN V(4)
+.END
diff --git a/examples/proc2mod/process.pro b/examples/proc2mod/process.pro
new file mode 100644
index 000000000..f4504a8c4
--- /dev/null
+++ b/examples/proc2mod/process.pro
@@ -0,0 +1,203 @@
+NM1  PM1  NM2  PM2  NM3   PY1  ML1  ML2  DU1  DU2
+*
+* Example process file
+*
+*PROCESS=BSIM 
+*RUN=
+*WAFER=
+*XPOS=6
+*YPOS=5
+*OPERATOR=Min-Chie
+*DATE=July-16-85
+*
+*   NMOS-1 PARAMETERS  (07-16-85)
+*
+-1.0087E+000,-2.1402E-001,3.44354E-001
+7.96434E-001,0.00000E+000,0.00000E+000
+1.31191E+000,3.23395E-001,-5.7698E-001
+1.46640E-001,1.68585E-001,-1.8796E-001
+-1.0027E-003,-9.4847E-003,1.47316E-002
+5.34334E+002,7.9799E-001,4.7740E-001
+4.38497E-002,6.38105E-002,-6.1053E-002
+-5.7332E-002,1.01174E+000,1.62706E-002
+8.25434E+000,-2.4197E+001,1.95696E+001
+-7.6911E-004,9.62411E-003,-3.7951E-003
+7.86777E-004,7.35448E-004,-1.7796E-003
+1.06821E-003,-8.0958E-003,4.03379E-003
+-1.9209E-002,-7.4573E-002,1.47520E-002
+5.40612E+002,6.21401E+002,-1.9190E+002
+-1.2992E+001,-6.4900E+001,4.29043E+001
+-9.4035E+000,1.18239E+002,-2.9747E+001
+0.0000E-002,0.00000E-001,0.0000E-002
+3.00000E-002,2.70000E+001,5.00000E+000
+**  2.70000E-010,2.70000E-010,1.40000E-010
+**  remove the overlap capacitances !!
+0.00000E-000,0.00000E-000,0.00000E-000
+1.0   0.0,   0.0
+0.0,  0.0,   0.0
+0.0,  0.0,   0.0
+0.0,  0.0,   0.0
+*
+*PROCESS=BSIM 
+*RUN=
+*WAFER=
+*XPOS=6
+*YPOS=5
+*OPERATOR= TRANSLATED FROM NM1
+*         (BY SCALING THE MOBILITY PARAMETERS)
+*DATE=July-16-85
+*
+*   PMOS-1 PARAMETERS  (07-16-85)
+*
+-1.0087E+000,-2.1402E-001,3.44354E-001
+7.96434E-001,0.00000E+000,0.00000E+000
+1.31191E+000,3.23395E-001,-5.7698E-001
+1.46640E-001,1.68585E-001,-1.8796E-001
+-1.0027E-003,-9.4847E-003,1.47316E-002
+1.82193E+002,2.7226E-001,1.6288E-001
+4.38497E-002,6.38105E-002,-6.1053E-002
+-5.7332E-002,1.01174E+000,1.62706E-002
+2.81626E+000,-0.8255E+001,0.66768E+001
+-7.6911E-004,9.62411E-003,-3.7951E-003
+7.86777E-004,7.35448E-004,-1.7796E-003
+1.06821E-003,-8.0958E-003,4.03379E-003
+-1.9209E-002,-7.4573E-002,1.47520E-002
+1.84449E+002,2.12012E+002,-0.6547E+002
+-0.4433E+001,-2.2143E+001,1.46383E+001
+-3.2083E+000,0.40341E+002,-1.0149E+001
+0.0000E-002,0.00000E-001,0.0000E-002
+3.00000E-002,2.70000E+001,5.00000E+000
+**  2.70000E-010,2.70000E-010,1.40000E-010
+**  remove the overlap capacitances !!
+0.00000E-000,0.00000E-000,0.00000E-000
+1.0   0.0,   0.0
+0.0,  0.0,   0.0
+0.0,  0.0,   0.0
+0.0,  0.0,   0.0
+*
+*
+*PROCESS=BSIM
+*RUN=6,8
+*WAFER=1
+*XPOS=6
+*YPOS=5
+*OPERATOR=joey & min
+*DATE=3/8/'85
+*
+*   NMOS-2 PARAMETERS  (03-08-85)
+*
+-1.0682E+000,-6.7765E-002,4.15888E-001
+7.93602E-001,0.00000E+000,0.00000E+000
+1.38210E+000,1.56889E-001,-6.3435E-001
+1.60163E-001,1.41849E-001,-2.0333E-001
+-1.1885E-002,1.33579E-002,2.13053E-002
+5.44582E+002,9.4444E-001,4.4423E-001
+4.02955E-002,5.36003E-002,-5.1224E-002
+2.01256E-001,4.30621E-001,-1.5909E-001
+-1.1522E+000,-2.5360E+000,2.48135E+001
+-3.0525E-003,1.40355E-002,-2.1259E-003
+2.33703E-003,-1.9621E-003,-3.0147E-003
+-1.5014E-003,-1.7938E-003,5.04494E-003
+-9.6961E-002,9.68463E-002,6.56404E-002
+5.95572E+002,4.75833E+002,-2.3062E+002
+-7.7819E+001,7.75110E+001,8.19963E+001
+-1.8177E+001,1.23358E+002,-1.9316E+001
+0.0000E-003,0.00000E-002,0.0000E-002
+3.20000E-002,2.70000E+001,5.00000E+000
+2.69000E-010,2.69000E-010,2.34000E-010
+1.0,   0.0,   0.0
+0.0,   0.0,   0.0
+0.0,   0.0,   0.0
+0.0,   0.0,   0.0
+*
+*   PMOS-2 PARAMETERS  (03-08-85)
+*
+-2.1389E-001,3.36471E-002,2.20237E-001
+6.97239E-001,0.00000E+000,0.00000E+000
+5.95618E-001,-9.7957E-002,-8.1902E-002
+-2.0029E-002,1.97751E-002,-4.0038E-002
+-1.4030E-002,3.62814E-002,1.44720E-002
+1.82193E+002,8.6560E-001,5.7444E-001
+1.12067E-001,9.28463E-002,-8.8985E-002
+2.39431E-002,8.89483E-002,1.05634E-002
+7.51914E+000,-1.8327E+000,3.98658E+000
+-1.3199E-003,4.00836E-003,1.97847E-004
+5.70255E-004,-1.2309E-003,-2.3082E-003
+5.07623E-003,-1.8537E-004,1.76966E-003
+-1.2781E-002,1.14420E-002,6.36308E-003
+1.89043E+002,8.64555E+001,-3.4304E+001
+4.09098E+000,3.51921E+000,4.49145E+000
+6.71879E-001,7.66627E+000,-1.5826E+000
+0.0000E-003,0.00000E-003,0.0000E-003
+3.20000E-002,2.70000E+001,5.00000E+000
+4.39000E-010,4.39000E-010,2.34000E-010
+1.0,   0.0,   0.0
+0.0,   0.0,   0.0
+0.0,   0.0,   0.0
+0.0,   0.0,   0.0
+*
+*PROCESS=BSIM 
+*RUN=
+*WAFER=
+*XPOS=6
+*YPOS=5
+*OPERATOR= TRANSLATED FROM NM1
+*         (BY SHIFTING VFB --- THE SIZE-INDEP. TERM ONLY)
+*DATE=July-16-85
+*
+*   NMOS-3 PARAMETERS  (DEPLETION-MODE)  (07-16-85)
+*
+-5.6087E+000,-2.1402E-001,3.44354E-001
++** -1.0087E+000,-2.1402E-001,3.44354E-001
+7.96434E-001,0.00000E+000,0.00000E+000
+1.31191E+000,3.23395E-001,-5.7698E-001
+1.46640E-001,1.68585E-001,-1.8796E-001
+-1.0027E-003,-9.4847E-003,1.47316E-002
+5.34334E+002,7.9799E-001,4.7740E-001
+4.38497E-002,6.38105E-002,-6.1053E-002
+-5.7332E-002,1.01174E+000,1.62706E-002
+8.25434E+000,-2.4197E+001,1.95696E+001
+-7.6911E-004,9.62411E-003,-3.7951E-003
+7.86777E-004,7.35448E-004,-1.7796E-003
+1.06821E-003,-8.0958E-003,4.03379E-003
+-1.9209E-002,-7.4573E-002,1.47520E-002
+5.40612E+002,6.21401E+002,-1.9190E+002
+-1.2992E+001,-6.4900E+001,4.29043E+001
+-9.4035E+000,1.18239E+002,-2.9747E+001
+0.0000E-002,0.00000E-001,0.0000E-002
+3.00000E-002,2.70000E+001,5.00000E+000
+**  2.70000E-010,2.70000E-010,1.40000E-010
+**  remove the overlap capacitances !!
+0.00000E-000,0.00000E-000,0.00000E-000
+1.0   0.0,   0.0
+0.0,  0.0,   0.0
+0.0,  0.0,   0.0
+0.0,  0.0,   0.0
+*
+**************************************
+**************************************
+*
+*   poly layer-1
+*
+30.0,  7.0E-5,   0,        0,      0
+0,     0,        0,        0,      0
+*
+*   metal layer-1 
+*
+0.040, 2.60E-5,  0,        0,      0
+0,     0,        0,        0,      0
+*
+*   metal layer-2 (top metal)
+*
+0.030, 1.3E-5,   0,        0,      0
+0,     0,        0,        0,      0
+*
+*   n+ diffusion layer
+*
+35.0,  2.75E-4,  1.90E-10, 1.0E-5, 0.7
+0.8,   0.5,      0.33,     0,      0
+*
+*   p+ diffusion layer
+*
+120.0, 3.1E-4,   3.0E-010, 1.0E-5, 0.7
+0.8,   0.5,      0.33,     0,      0
diff --git a/examples/vbic/CEamp.sp b/examples/vbic/CEamp.sp
new file mode 100644
index 000000000..446d52136
--- /dev/null
+++ b/examples/vbic/CEamp.sp
@@ -0,0 +1,26 @@
+VBIC Pole Zero Test
+
+Vcc    3 0 5
+Rc     2 3 1k
+Rb     3 1 200k
+I1     0 1 AC 1
+Vmeas  4 2
+Cshunt 4 0 .1u
+
+Q1  2 1 0 0 N1
+
+.control
+ac dec 100 0.1Meg 10G
+plot db(i(vmeas))
+plot ph(i(vmeas))
+pz 1 0 4 0 cur pz
+print all
+.endc
+
+.MODEL N1 NPN LEVEL=4 
++ IS=1e-16 IBEI=1e-18 IBEN=5e-15 IBCI=2e-17 IBCN=5e-15 ISP=1e-15 RCX=10
++ RCI=60 RBX=10 RBI=40 RE=2 RS=20 RBP=40 VEF=10 VER=4 IKF=2e-3 ITF=8e-2
++ XTF=20 IKR=2e-4 IKP=2e-4 CJE=1e-13 CJC=2e-14 CJEP=1e-13 CJCP=4e-13 VO=2
++ GAMM=2e-11 HRCF=2 QCO=1e-12 AVC1=2 AVC2=15 TF=10e-12 TR=100e-12 TD=2e-11 RTH=300
+
+.END
diff --git a/examples/vbic/FG.sp b/examples/vbic/FG.sp
new file mode 100644
index 000000000..89ff271dc
--- /dev/null
+++ b/examples/vbic/FG.sp
@@ -0,0 +1,21 @@
+VBIC Gummel Test
+V1 Q1_E 0 5.0
+VC Q1_C 0 0.0 
+VB Q1_B 0 0.0
+Q1 Q1_C Q1_B Q1_E P1
+.DC V1 0.2 1.2 10m
+.OPTIONS GMIN=1e-13
+
+.control
+run
+plot abs(i(vc)) abs(i(vb)) ylimit 1e-15 0.1 ylog
+plot abs(i(vc))/abs(i(vb)) vs abs(-i(vc)) xlimit 1e-09 0.1 xlog
+.endc
+
+.MODEL P1 PNP LEVEL=4 
++ IS=1e-16 IBEI=1e-18 IBEN=5e-15 IBCI=2e-17 IBCN=5e-15 ISP=1e-15 RCX=10
++ RCI=60 RBX=10 RBI=40 RE=2 RS=20 RBP=40 VEF=10 VER=4 IKF=2e-3 ITF=8e-2
++ XTF=20 IKR=2e-4 IKP=2e-4 CJE=1e-13 CJC=2e-14 CJEP=1e-13 CJCP=4e-13 VO=2
++ GAMM=2e-11 HRCF=2 QCO=1e-12 AVC1=2 AVC2=15 TF=10e-12 TR=100e-12 TD=2e-11 RTH=300
+
+.END
diff --git a/examples/vbic/FO.sp b/examples/vbic/FO.sp
new file mode 100644
index 000000000..91d0c1669
--- /dev/null
+++ b/examples/vbic/FO.sp
@@ -0,0 +1,20 @@
+VBIC Output Test
+V1 V1_P V1_N 0.0
+VB V1_N 0 0.5
+VC Q1_C 0 0.0
+Q1 Q1_C V1_P 0 N1
+.DC VC 0 5 50M VB 700M 1 50M
+
+.control
+run
+plot -i(vc)
+plot -i(vb)
+.endc
+
+.MODEL N1 NPN LEVEL=4 
++ IS=1e-16 IBEI=1e-18 IBEN=5e-15 IBCI=2e-17 IBCN=5e-15 ISP=1e-15 RCX=10
++ RCI=60 RBX=10 RBI=40 RE=2 RS=20 RBP=40 VEF=10 VER=4 IKF=2e-3 ITF=8e-2
++ XTF=20 IKR=2e-4 IKP=2e-4 CJE=1e-13 CJC=2e-14 CJEP=1e-13 CJCP=4e-13 VO=2
++ GAMM=2e-11 HRCF=2 QCO=1e-12 AVC1=2 AVC2=15 TF=10e-12 TR=100e-12 TD=2e-11 RTH=300
+
+.END
diff --git a/examples/vbic/diffamp.sp b/examples/vbic/diffamp.sp
new file mode 100644
index 000000000..016e585f5
--- /dev/null
+++ b/examples/vbic/diffamp.sp
@@ -0,0 +1,45 @@
+VBIC DiffAmp Test
+Q8 Q8_B Q8_B VCC P1
+Q9 Q9_B Q9_B Q8_B P1
+V1 VCC 0 3.3 
+V2 V2_P R3_N  AC 1 DC 0 Sine(0 10m 10Meg 0 0)
+I1 VCC I1_N 10u
+Q12 Q9_B I1_N 0 N1 M=2
+Q13 Q5_B I1_N 0 N1 M=2
+Q10 Q1_E I1_N 0 N1
+Q11 I1_N I1_N 0 N1
+E1 E1_P 0 Q3_C Q4_C 1
+rl e1_p 0 1e6
+Q2 Q6_C R3_N Q1_E N1
+R4 R3_N 0 1K
+Q3 Q3_C Q9_B Q5_C P1
+Q1 Q5_C V2_P Q1_E N1
+Q6 Q6_C Q5_B VCC P1
+R1 Q3_C 0 100k
+Q7 Q5_B Q5_B VCC P1
+Q4 Q4_C Q9_B Q6_C P1
+R2 Q4_C 0 100k
+R3 VCC R3_N 1K
+Q5 Q5_C Q5_B VCC P1
+*.OP
+.TRAN 1n 1u 0 10n
+*.AC DEC 25 100k 1G
+
+.control
+run
+plot v(e1_p)
+.endc
+
+.MODEL N1 NPN LEVEL=4 
++ IS=1e-16 IBEI=1e-18 IBEN=5e-15 IBCI=2e-17 IBCN=5e-15 ISP=1e-15 RCX=10
++ RCI=60 RBX=10 RBI=40 RE=2 RS=20 RBP=40 VEF=10 VER=4 IKF=2e-3 ITF=8e-2
++ XTF=20 IKR=2e-4 IKP=2e-4 CJE=1e-13 CJC=2e-14 CJEP=1e-13 CJCP=4e-13 VO=2
++ GAMM=2e-11 HRCF=2 QCO=1e-12 AVC1=2 AVC2=15 TF=10e-12 TR=100e-12 TD=2e-11 RTH=300
+
+.MODEL P1 PNP LEVEL=4 
++ IS=1e-16 IBEI=1e-18 IBEN=5e-15 IBCI=2e-17 IBCN=5e-15 ISP=1e-15 RCX=10
++ RCI=60 RBX=10 RBI=40 RE=2 RS=20 RBP=40 VEF=10 VER=4 IKF=2e-3 ITF=8e-2
++ XTF=20 IKR=2e-4 IKP=2e-4 CJE=1e-13 CJC=2e-14 CJEP=1e-13 CJCP=4e-13 VO=2
++ GAMM=2e-11 HRCF=2 QCO=1e-12 AVC1=2 AVC2=15 TF=10e-12 TR=100e-12 TD=2e-11 RTH=300
+
+.END
diff --git a/examples/vbic/diode.sp b/examples/vbic/diode.sp
new file mode 100644
index 000000000..943cb30e7
--- /dev/null
+++ b/examples/vbic/diode.sp
@@ -0,0 +1,19 @@
+VBIC diode test
+Q1 0 0 VCC P1
+V1 VCC 0 1.0
+
+.OP
+
+.MODEL N1 NPN LEVEL=4 
++ IS=1e-16 IBEI=1e-18 IBEN=5e-15 IBCI=2e-17 IBCN=5e-15 ISP=1e-15 RCX=10
++ RCI=60 RBX=10 RBI=40 RE=2 RS=20 RBP=40 VEF=10 VER=4 IKF=2e-3 ITF=8e-2
++ XTF=20 IKR=2e-4 IKP=2e-4 CJE=1e-13 CJC=2e-14 CJEP=1e-13 CJCP=4e-13 VO=2
++ GAMM=2e-11 HRCF=2 QCO=1e-12 AVC1=2 AVC2=15 TF=10e-12 TR=100e-12 TD=2e-11 RTH=300
+
+.MODEL P1 PNP LEVEL=4 
++ IS=1e-16 IBEI=1e-18 IBEN=5e-15 IBCI=2e-17 IBCN=5e-15 ISP=1e-15 RCX=10
++ RCI=60 RBX=10 RBI=40 RE=2 RS=20 RBP=40 VEF=10 VER=4 IKF=2e-3 ITF=8e-2
++ XTF=20 IKR=2e-4 IKP=2e-4 CJE=1e-13 CJC=2e-14 CJEP=1e-13 CJCP=4e-13 VO=2
++ GAMM=2e-11 HRCF=2 QCO=1e-12 AVC1=2 AVC2=15 TF=10e-12 TR=100e-12 TD=2e-11 RTH=300
+
+.END
diff --git a/examples/vbic/noise_scale_test.sp b/examples/vbic/noise_scale_test.sp
new file mode 100644
index 000000000..9366895e3
--- /dev/null
+++ b/examples/vbic/noise_scale_test.sp
@@ -0,0 +1,25 @@
+VBIC Noise Scale Test
+V1 R3_P 0 5 
+V2 V2_P 0 5 AC 1
+C1 R3_N V2_P 1n  
+R4 R3_N 0 100k
+Q1 VOUT R3_N Q1_E N1 M=2
+*Q2 VOUT R3_N Q1_E N1
+R1 R3_P VOUT 100k
+R2 Q1_E 0 10k
+R3 R3_P R3_N 500k
+.NOISE v(vout) V2 DEC 25 1k 100Meg
+
+.control
+run
+plot sqrt(onoise_spectrum) loglog
+.endc
+
+.MODEL N1 NPN LEVEL=4 
++ IS=1e-16 IBEI=1e-18 IBEN=5e-15 IBCI=2e-17 IBCN=5e-15 ISP=1e-15 RCX=10
++ RCI=60 RBX=10 RBI=40 RE=2 RS=20 RBP=40 VEF=10 VER=4 IKF=2e-3 ITF=8e-2
++ XTF=20 IKR=2e-4 IKP=2e-4 CJE=1e-13 CJC=2e-14 CJEP=1e-13 CJCP=4e-13 VO=2
++ GAMM=2e-11 HRCF=2 QCO=1e-12 AVC1=2 AVC2=15 TF=10e-12 TR=100e-12 TD=2e-11 
++ RTH=300 KFN=10e-15 AFN=1 BFN=1
+
+.END
diff --git a/examples/vbic/temp.sp b/examples/vbic/temp.sp
new file mode 100644
index 000000000..5b3a05620
--- /dev/null
+++ b/examples/vbic/temp.sp
@@ -0,0 +1,20 @@
+VBIC Temp test
+V1 1 0 1.0
+VC 1 Q1_C 0.0
+VB 1 Q1_B 0.0
+Q1 Q1_C Q1_B 0 N1
+.OPTIONS TEMP=150
+.DC V1 0.2 1.2 10m
+
+.control
+run
+plot i(vc) i(vb)
+.endc
+
+.MODEL N1 NPN LEVEL=4 
++ IS=1e-16 IBEI=1e-18 IBEN=5e-15 IBCI=2e-17 IBCN=5e-15 ISP=1e-15 RCX=10
++ RCI=60 RBX=10 RBI=40 RE=2 RS=20 RBP=40 VEF=10 VER=4 IKF=2e-3 ITF=8e-2
++ XTF=20 IKR=2e-4 IKP=2e-4 CJE=1e-13 CJC=2e-14 CJEP=1e-13 CJCP=4e-13 VO=2
++ GAMM=2e-11 HRCF=2 QCO=1e-12 AVC1=2 AVC2=15 TF=10e-12 TR=100e-12 TD=2e-11 RTH=300
+
+.END
diff --git a/examples/vbic/tran_aplac_test.sp b/examples/vbic/tran_aplac_test.sp
new file mode 100644
index 000000000..803d47266
--- /dev/null
+++ b/examples/vbic/tran_aplac_test.sp
@@ -0,0 +1,23 @@
+VBIC Aplac Transient Test
+V1 R3_P 0 5 
+V2 V2_P 0 5 Pulse(0 100m 0 10n 10n 490.1n 1u)
+C1 R3_N V2_P 1n  
+R4 R3_N 0 100k
+Q1 R1_N R3_N Q1_E N1
+R1 R3_P R1_N 100k
+R2 Q1_E 0 10k
+R3 R3_P R3_N 500k
+
+.control
+tran 10n 10u
+run
+plot v(Q1_E)
+.endc
+
+.MODEL N1 NPN LEVEL=4 
++ IS=1e-16 IBEI=1e-18 IBEN=5e-15 IBCI=2e-17 IBCN=5e-15 ISP=1e-15 RCX=10
++ RCI=60 RBX=10 RBI=40 RE=2 RS=20 RBP=40 VEF=10 VER=4 IKF=2e-3 ITF=8e-2
++ XTF=20 IKR=2e-4 IKP=2e-4 CJE=1e-13 CJC=2e-14 CJEP=1e-13 CJCP=4e-13 VO=2
++ GAMM=2e-11 HRCF=2 QCO=1e-12 AVC1=2 AVC2=15 TF=10e-12 TR=100e-12 TD=2e-11 RTH=300
+
+.END
diff --git a/examples/vbic/vbic.sp b/examples/vbic/vbic.sp
new file mode 100644
index 000000000..edc2d53bb
--- /dev/null
+++ b/examples/vbic/vbic.sp
@@ -0,0 +1,46 @@
+VBIC Test
+VC 1  0 DC 2.0
+VB 2  0 DC 0.7
+VE 3  0 DC 0.0
+*VS 4  0 DC 0.0
+Q1 1  2  3  VBIC_HSPICE
+.OPTIONS GMIN=1e-13
+*.OP
+.DC VB 0.2 1.0 0.01
+
+.control
+run
+plot abs(-i(vc)) abs(-i(vb)) ylimit 1e-12 0.1 ylog
+plot abs(-i(vc))/abs(-i(vb)) vs abs(-i(vc)) xlimit 1e-09 0.1 xlog
+.endc
+
+.MODEL VBIC NPN LEVEL=4
++ RCX=10 RCI=10 RBX=1 RBI=10 RE=1 RBP=10 RS=10
++ IBEN=1.0E-13
++ RTH=100
+
+.MODEL VBIC_HSPICE NPN LEVEL=4
++ AFN=1 AJC=-0.5 AJE=0.5 AJS=0.5 
++ AVC1=0 AVC2=0 BFN=1 CBCO=0 CBEO=0 CJC=2E-14 
++ CJCP=4E-13 CJE=1E-13 CJEP=1E-13 CTH=0 
++ EA=1.12 EAIC=1.12 EAIE=1.12 EAIS=1.12 EANC=1.12 
++ EANE=1.12 EANS=1.12 FC=0.9 GAMM=2E-11 HRCF=2 
++ IBCI=2E-17 IBCIP=0 IBCN=5E-15 IBCNP=0 
++ IBEI=1E-18 IBEIP=0 IBEN=5E-15 IBENP=0 
++ IKF=2E-3 IKP=2E-4 IKR=2E-4 IS=1E-16 ISP=1E-15 ITF=8E-2 
++ KFN=0 MC=0.33 ME=0.33 MS=0.33 
++ NCI=1 NCIP=1 NCN=2 NCNP=2 NEI=1 NEN=2 
++ NF=1 NFP=1 NR=1 PC=0.75 PE=0.75 PS=0.75 QCO=1E-12 QTF=0 
++ RBI=4 RBP=4 RBX=1 RCI=6 RCX=1 RE=0.2 RS=2 
++ RTH=300 TAVC=0 TD=2E-11 TF=10E-12 TNF=0 TR=100E-12 
++ TNOM=25 VEF=10 VER=4 VO=2 
++ VTF=0 WBE=1 WSP=1 
++ XII=3 XIN=3 XIS=3 XRBI=1 XRCI=1 XRE=1 XRS=1 XTF=20 XVO=0 
+
+.MODEL VBIC_APLAC NPN LEVEL=4 
++ IS=1e-16 IBEI=1e-18 IBEN=5e-15 IBCI=2e-17 IBCN=5e-15 ISP=1e-15 RCX=10
++ RCI=60 RBX=10 RBI=40 RE=2 RS=20 RBP=40 VEF=10 VER=4 IKF=2e-3 ITF=8e-2
++ XTF=20 IKR=2e-4 IKP=2e-4 CJE=1e-13 CJC=2e-14 CJEP=1e-13 CJCP=4e-13 VO=2
++ GAMM=2e-11 HRCF=2 QCO=1e-12 AVC1=2 AVC2=15 TF=10e-12 TR=100e-12 TD=2e-11 RTH=300
+
+.END