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Added some examples.

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pnenzi
2004-08-09 16:20:23 +00:00
parent 200a5b9c07
commit 4af6137cd3
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examples/cider/mos/bootinv.cir
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NMOS Enhancement-Load Bootstrap Inverter
Vdd 1 0 5.0v
Vss 2 0 0.0v
Vin 5 0 0.0v PWL (0.0ns 5.0v) (1ns 0.0v) (10ns 0.0v) (11ns 5.0v)
+ (20ns 5.0v) (21ns 0.0v) (30ns 0.0v) (31ns 5.0v)
M1 1 1 3 2 M_NMOS w=5u
M2 1 3 4 4 M_NMOS w=5u
M3 4 5 2 2 M_NMOS w=5u
CL 4 0 0.1pf
CB 3 4 0.1pf
.model M_NMOS numos
+ x.mesh l=0.0 n=1
+ x.mesh l=0.6 n=4
+ x.mesh l=0.7 n=5
+ x.mesh l=1.0 n=7
+ x.mesh l=1.2 n=11
+ x.mesh l=3.2 n=21
+ x.mesh l=3.4 n=25
+ x.mesh l=3.7 n=27
+ x.mesh l=3.8 n=28
+ x.mesh l=4.4 n=31
+
+ y.mesh l=-.05 n=1
+ y.mesh l=0.0 n=5
+ y.mesh l=.05 n=9
+ y.mesh l=0.3 n=14
+ y.mesh l=2.0 n=19
+
+ region num=1 material=1 y.l=0.0
+ material num=1 silicon
+ mobility material=1 concmod=sg fieldmod=sg
+ mobility material=1 init elec major
+ mobility material=1 init elec minor
+ mobility material=1 init hole major
+ mobility material=1 init hole minor
+
+ region num=2 material=2 y.h=0.0 x.l=0.7 x.h=3.7
+ material num=2 oxide
+
+ elec num=1 x.l=3.8 x.h=4.4 y.l=0.0 y.h=0.0
+ elec num=2 x.l=0.7 x.h=3.7 iy.l=1 iy.h=1
+ elec num=3 x.l=0.0 x.h=0.6 y.l=0.0 y.h=0.0
+ elec num=4 x.l=0.0 x.h=4.4 y.l=2.0 y.h=2.0
+
+ doping unif p.type conc=2.5e16 x.l=0.0 x.h=4.4 y.l=0.0 y.h=2.0
+ doping unif p.type conc=1e16 x.l=0.0 x.h=4.4 y.l=0.0 y.h=0.05
+ doping unif n.type conc=1e20 x.l=0.0 x.h=1.1 y.l=0.0 y.h=0.2
+ doping unif n.type conc=1e20 x.l=3.3 x.h=4.4 y.l=0.0 y.h=0.2
+
+ models concmob fieldmob
+ method ac=direct onec
.tran 0.2ns 40ns
.print v(4)
.options acct bypass=1 method=gear
.end
examples/cider/mos/charge.cir
+57
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MOS charge pump
vin 4 0 dc 0v pulse 0 5 15ns 5ns 5ns 50ns 100ns
vdd 5 6 dc 0v pulse 0 5 25ns 5ns 5ns 50ns 100ns
vbb 0 7 dc 0v pulse 0 5 0ns 5ns 5ns 50ns 100ns
rd 6 2 10k
m1 5 4 3 7 mmod w=100um
vs 3 2 0
vc 2 1 0
c2 1 0 10pf
.ic v(3)=1.0
.tran 2ns 200ns
.options acct bypass=1
.print tran v(1) v(2)
.model mmod numos
+ x.mesh n=1 l=0
+ x.mesh n=3 l=0.4
+ x.mesh n=7 l=0.6
+ x.mesh n=15 l=1.4
+ x.mesh n=19 l=1.6
+ x.mesh n=21 l=2.0
+
+ y.mesh n=1 l=0
+ y.mesh n=4 l=0.015
+ y.mesh n=8 l=0.05
+ y.mesh n=12 l=0.25
+ y.mesh n=14 l=0.35
+ y.mesh n=17 l=0.5
+ y.mesh n=21 l=1.0
+
+ region num=1 material=1 y.l=0.015
+ material num=1 silicon
+ mobility material=1 concmod=sg fieldmod=sg
+ mobility material=1 elec major
+ mobility material=1 elec minor
+ mobility material=1 hole major
+ mobility material=1 hole minor
+
+ region num=2 material=2 y.h=0.015 x.l=0.5 x.h=1.5
+ material num=2 oxide
+
+ elec num=1 ix.l=18 ix.h=21 iy.l=4 iy.h=4
+ elec num=2 ix.l=5 ix.h=17 iy.l=1 iy.h=1
+ elec num=3 ix.l=1 ix.h=4 iy.l=4 iy.h=4
+ elec num=4 ix.l=1 ix.h=21 iy.l=21 iy.h=21
+
+ doping unif n.type conc=1e18 x.l=0.0 x.h=0.5 y.l=0.015 y.h=0.25
+ doping unif n.type conc=1e18 x.l=1.5 x.h=2.0 y.l=0.015 y.h=0.25
+ doping unif p.type conc=1e15 x.l=0.0 x.h=2.0 y.l=0.015 y.h=1.0
+ doping unif p.type conc=1.3e17 x.l=0.5 x.h=1.5 y.l=0.015 y.h=0.05
+
+ models concmob fieldmob
+ method onec
.end
examples/cider/mos/cmosinv.cir
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CMOS Inverter
Vdd 1 0 5.0v
Vss 2 0 0.0v
X1 1 2 3 4 INV
Vin 3 0 2.5v
.SUBCKT INV 1 2 3 4
* Vdd Vss Vin Vout
M1 14 13 15 16 M_PMOS w=6.0u
M2 24 23 25 26 M_NMOS w=3.0u
Vgp 3 13 0.0v
Vdp 4 14 0.0v
Vsp 1 15 0.0v
Vbp 1 16 0.0v
Vgn 3 23 0.0v
Vdn 4 24 0.0v
Vsn 2 25 0.0v
Vbn 2 26 0.0v
.ENDS INV
.model M_NMOS numos
+ x.mesh l=0.0 n=1
+ x.mesh l=0.6 n=4
+ x.mesh l=0.7 n=5
+ x.mesh l=1.0 n=7
+ x.mesh l=1.2 n=11
+ x.mesh l=3.2 n=21
+ x.mesh l=3.4 n=25
+ x.mesh l=3.7 n=27
+ x.mesh l=3.8 n=28
+ x.mesh l=4.4 n=31
+
+ y.mesh l=-.05 n=1
+ y.mesh l=0.0 n=5
+ y.mesh l=.05 n=9
+ y.mesh l=0.3 n=14
+ y.mesh l=2.0 n=19
+
+ region num=1 material=1 y.l=0.0
+ material num=1 silicon
+ mobility material=1 concmod=sg fieldmod=sg
+ mobility material=1 elec major
+ mobility material=1 elec minor
+ mobility material=1 hole major
+ mobility material=1 hole minor
+
+ region num=2 material=2 y.h=0.0 x.l=0.7 x.h=3.7
+ material num=2 oxide
+
+ elec num=1 x.l=3.8 x.h=4.4 y.l=0.0 y.h=0.0
+ elec num=2 x.l=0.7 x.h=3.7 iy.l=1 iy.h=1
+ elec num=3 x.l=0.0 x.h=0.6 y.l=0.0 y.h=0.0
+ elec num=4 x.l=0.0 x.h=4.4 y.l=2.0 y.h=2.0
+
+ doping unif p.type conc=2.5e16 x.l=0.0 x.h=4.4 y.l=0.0 y.h=2.0
+ doping unif p.type conc=1e16 x.l=0.0 x.h=4.4 y.l=0.0 y.h=0.05
+ doping unif n.type conc=1e20 x.l=0.0 x.h=1.1 y.l=0.0 y.h=0.2
+ doping unif n.type conc=1e20 x.l=3.3 x.h=4.4 y.l=0.0 y.h=0.2
+
+ models concmob fieldmob bgn srh conctau
+ method ac=direct onec
.model M_PMOS numos
+ x.mesh l=0.0 n=1
+ x.mesh l=0.6 n=4
+ x.mesh l=0.7 n=5
+ x.mesh l=1.0 n=7
+ x.mesh l=1.2 n=11
+ x.mesh l=3.2 n=21
+ x.mesh l=3.4 n=25
+ x.mesh l=3.7 n=27
+ x.mesh l=3.8 n=28
+ x.mesh l=4.4 n=31
+
+ y.mesh l=-.05 n=1
+ y.mesh l=0.0 n=5
+ y.mesh l=.05 n=9
+ y.mesh l=0.3 n=14
+ y.mesh l=2.0 n=19
+
+ region num=1 material=1 y.l=0.0
+ material num=1 silicon
+ mobility material=1 concmod=sg fieldmod=sg
+ mobility material=1 elec major
+ mobility material=1 elec minor
+ mobility material=1 hole major
+ mobility material=1 hole minor
+
+ region num=2 material=2 y.h=0.0 x.l=0.7 x.h=3.7
+ material num=2 oxide
+
+ elec num=1 x.l=3.8 x.h=4.4 y.l=0.0 y.h=0.0
+ elec num=2 x.l=0.7 x.h=3.7 iy.l=1 iy.h=1
+ elec num=3 x.l=0.0 x.h=0.6 y.l=0.0 y.h=0.0
+ elec num=4 x.l=0.0 x.h=4.4 y.l=2.0 y.h=2.0
+
+ doping unif n.type conc=1e16 x.l=0.0 x.h=4.4 y.l=0.0 y.h=2.0
+ doping unif p.type conc=3e16 x.l=0.0 x.h=4.4 y.l=0.0 y.h=0.05
+ doping unif p.type conc=1e20 x.l=0.0 x.h=1.1 y.l=0.0 y.h=0.2
+ doping unif p.type conc=1e20 x.l=3.3 x.h=4.4 y.l=0.0 y.h=0.2
+
+ models concmob fieldmob bgn srh conctau
+ method ac=direct onec
*.tran 0.1ns 5ns
*.op
.dc Vin 0.0v 5.001v 0.05v
.print v(4)
.options acct bypass=1 method=gear
.end
examples/cider/mos/nmosinv.cir
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Resistive load NMOS inverter
vin 1 0 pwl 0 0.0 2ns 5
vdd 3 0 dc 5.0
rd 3 2 2.5k
m1 2 1 4 5 mmod w=10um
cl 2 0 2pf
vb 5 0 0
vs 4 0 0
.model mmod numos
+ x.mesh l=0.0 n=1
+ x.mesh l=0.6 n=4
+ x.mesh l=0.7 n=5
+ x.mesh l=1.0 n=7
+ x.mesh l=1.2 n=11
+ x.mesh l=3.2 n=21
+ x.mesh l=3.4 n=25
+ x.mesh l=3.7 n=27
+ x.mesh l=3.8 n=28
+ x.mesh l=4.4 n=31
+
+ y.mesh l=-.05 n=1
+ y.mesh l=0.0 n=5
+ y.mesh l=.05 n=9
+ y.mesh l=0.3 n=14
+ y.mesh l=2.0 n=19
+
+ region num=1 material=1 y.l=0.0
+ material num=1 silicon
+ mobility material=1 concmod=sg fieldmod=sg
+ mobility material=1 elec major
+ mobility material=1 elec minor
+ mobility material=1 hole major
+ mobility material=1 hole minor
+
+ region num=2 material=2 y.h=0.0 x.l=0.7 x.h=3.7
+ material num=2 oxide
+
+ elec num=1 x.l=3.8 x.h=4.4 y.l=0.0 y.h=0.0
+ elec num=2 x.l=0.7 x.h=3.7 iy.l=1 iy.h=1
+ elec num=3 x.l=0.0 x.h=0.6 y.l=0.0 y.h=0.0
+ elec num=4 x.l=0.0 x.h=4.4 y.l=2.0 y.h=2.0
+
+ doping unif p.type conc=2.5e16 x.l=0.0 x.h=4.4 y.l=0.0 y.h=2.0
+ doping unif p.type conc=1e16 x.l=0.0 x.h=4.4 y.l=0.0 y.h=0.05
+ doping unif n.type conc=1e20 x.l=0.0 x.h=1.1 y.l=0.0 y.h=0.2
+ doping unif n.type conc=1e20 x.l=3.3 x.h=4.4 y.l=0.0 y.h=0.2
+
+ models concmob fieldmob
+ method ac=direct onec
.tran 0.2ns 30ns
.options acct bypass=1
.print tran v(1) v(2)
.end
examples/cider/mos/pass.cir
+59
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Turnoff transient of pass transistor
M1 11 2 3 4 mmod w=20um
Cs 1 0 6.0pF
Cl 3 0 6.0pF
R1 3 6 200k
Vin 6 0 dc 0
Vdrn 1 11 dc 0
Vg 2 0 dc 5 pwl 0 5 0.1n 0 1 0
Vb 4 0 dc 0.0
.tran 0.05ns 0.2ns 0.0ns 0.05ns
.print tran v(1) i(Vdrn)
.ic v(1)=0 v(3)=0
.option acct bypass=1
.model mmod numos
+ x.mesh l=0.0 n=1
+ x.mesh l=0.6 n=4
+ x.mesh l=0.7 n=5
+ x.mesh l=1.0 n=7
+ x.mesh l=1.2 n=11
+ x.mesh l=3.2 n=21
+ x.mesh l=3.4 n=25
+ x.mesh l=3.7 n=27
+ x.mesh l=3.8 n=28
+ x.mesh l=4.4 n=31
+
+ y.mesh l=-.05 n=1
+ y.mesh l=0.0 n=5
+ y.mesh l=.05 n=9
+ y.mesh l=0.3 n=14
+ y.mesh l=2.0 n=19
+
+ region num=1 material=1 y.l=0.0
+ material num=1 silicon
+ mobility material=1 concmod=sg fieldmod=sg
+ mobility material=1 elec major
+ mobility material=1 elec minor
+ mobility material=1 hole major
+ mobility material=1 hole minor
+
+ region num=2 material=2 y.h=0.0 x.l=0.7 x.h=3.7
+ material num=2 oxide
+
+ elec num=1 x.l=3.8 x.h=4.4 y.l=0.0 y.h=0.0
+ elec num=2 x.l=0.7 x.h=3.7 iy.l=1 iy.h=1
+ elec num=3 x.l=0.0 x.h=0.6 y.l=0.0 y.h=0.0
+ elec num=4 x.l=0.0 x.h=4.4 y.l=2.0 y.h=2.0
+
+ doping unif p.type conc=2.5e16 x.l=0.0 x.h=4.4 y.l=0.0 y.h=2.0
+ doping unif p.type conc=1e16 x.l=0.0 x.h=4.4 y.l=0.0 y.h=0.05
+ doping unif n.type conc=1e20 x.l=0.0 x.h=1.1 y.l=0.0 y.h=0.2
+ doping unif n.type conc=1e20 x.l=3.3 x.h=4.4 y.l=0.0 y.h=0.2
+
+ models concmob fieldmob
+ method ac=direct onec
.end
examples/cider/mos/ringosc.cir
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CMOS Ring Oscillator
Vdd 1 0 5.0v
Vss 2 0 0.0v
X1 1 2 3 4 INV
X2 1 2 4 5 INV
X3 1 2 5 3 INV
*X4 1 2 6 7 INV
*X5 1 2 7 8 INV
*X6 1 2 8 9 INV
*X7 1 2 9 3 INV
.IC V(3)=0.0v V(4)=2.5v V(5)=5.0v
* V(6)=0.0v V(7)=5.0v V(8)=0.0v V(9)=5.0v
Vin 3 0 2.5v
.SUBCKT INV 1 2 3 4
* Vdd Vss Vin Vout
M1 14 13 15 16 M_PMOS w=6.0u
M2 24 23 25 26 M_NMOS w=3.0u
Vgp 3 13 0.0v
Vdp 4 14 0.0v
Vsp 1 15 0.0v
Vbp 1 16 0.0v
Vgn 3 23 0.0v
Vdn 4 24 0.0v
Vsn 2 25 0.0v
Vbn 2 26 0.0v
.ENDS INV
.model M_NMOS numos
+ x.mesh l=0.0 n=1
+ x.mesh l=0.6 n=4
+ x.mesh l=0.7 n=5
+ x.mesh l=1.0 n=7
+ x.mesh l=1.2 n=11
+ x.mesh l=3.2 n=21
+ x.mesh l=3.4 n=25
+ x.mesh l=3.7 n=27
+ x.mesh l=3.8 n=28
+ x.mesh l=4.4 n=31
+
+ y.mesh l=-.05 n=1
+ y.mesh l=0.0 n=5
+ y.mesh l=.05 n=9
+ y.mesh l=0.3 n=14
+ y.mesh l=2.0 n=19
+
+ region num=1 material=1 y.l=0.0
+ material num=1 silicon
+ mobility material=1 concmod=sg fieldmod=sg
+ mobility material=1 elec major
+ mobility material=1 elec minor
+ mobility material=1 hole major
+ mobility material=1 hole minor
+
+ region num=2 material=2 y.h=0.0 x.l=0.7 x.h=3.7
+ material num=2 oxide
+
+ elec num=1 x.l=3.8 x.h=4.4 y.l=0.0 y.h=0.0
+ elec num=2 x.l=0.7 x.h=3.7 iy.l=1 iy.h=1
+ elec num=3 x.l=0.0 x.h=0.6 y.l=0.0 y.h=0.0
+ elec num=4 x.l=0.0 x.h=4.4 y.l=2.0 y.h=2.0
+
+ doping unif p.type conc=2.5e16 x.l=0.0 x.h=4.4 y.l=0.0 y.h=2.0
+ doping unif p.type conc=1e16 x.l=0.0 x.h=4.4 y.l=0.0 y.h=0.05
+ doping unif n.type conc=1e20 x.l=0.0 x.h=1.1 y.l=0.0 y.h=0.2
+ doping unif n.type conc=1e20 x.l=3.3 x.h=4.4 y.l=0.0 y.h=0.2
+
+ models concmob fieldmob bgn srh conctau
+ method ac=direct onec
.model M_PMOS numos
+ x.mesh l=0.0 n=1
+ x.mesh l=0.6 n=4
+ x.mesh l=0.7 n=5
+ x.mesh l=1.0 n=7
+ x.mesh l=1.2 n=11
+ x.mesh l=3.2 n=21
+ x.mesh l=3.4 n=25
+ x.mesh l=3.7 n=27
+ x.mesh l=3.8 n=28
+ x.mesh l=4.4 n=31
+
+ y.mesh l=-.05 n=1
+ y.mesh l=0.0 n=5
+ y.mesh l=.05 n=9
+ y.mesh l=0.3 n=14
+ y.mesh l=2.0 n=19
+
+ region num=1 material=1 y.l=0.0
+ material num=1 silicon
+ mobility material=1 concmod=sg fieldmod=sg
+ mobility material=1 elec major
+ mobility material=1 elec minor
+ mobility material=1 hole major
+ mobility material=1 hole minor
+
+ region num=2 material=2 y.h=0.0 x.l=0.7 x.h=3.7
+ material num=2 oxide
+
+ elec num=1 x.l=3.8 x.h=4.4 y.l=0.0 y.h=0.0
+ elec num=2 x.l=0.7 x.h=3.7 iy.l=1 iy.h=1
+ elec num=3 x.l=0.0 x.h=0.6 y.l=0.0 y.h=0.0
+ elec num=4 x.l=0.0 x.h=4.4 y.l=2.0 y.h=2.0
+
+ doping unif n.type conc=1e16 x.l=0.0 x.h=4.4 y.l=0.0 y.h=2.0
+ doping unif p.type conc=3e16 x.l=0.0 x.h=4.4 y.l=0.0 y.h=0.05
+ doping unif p.type conc=1e20 x.l=0.0 x.h=1.1 y.l=0.0 y.h=0.2
+ doping unif p.type conc=1e20 x.l=3.3 x.h=4.4 y.l=0.0 y.h=0.2
+
+ models concmob fieldmob bgn srh conctau
+ method ac=direct onec
.tran 0.1ns 5ns
.print v(4)
.options acct bypass=1 method=gear
.end