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Standardize contact names.

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This commit is contained in:
Matt Guthaus
2019-12-17 15:55:20 -08:00
parent 8e151553e4
commit aceaa9fb21
8 changed files with 33 additions and 33 deletions
Download Patch File Download Diff File Expand all files Collapse all files
compiler/pgates/pgate.py
+8 -8
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@@ -88,14 +88,14 @@ class pgate(design.design):
# Center is completely symmetric.
if rotate:
contact_width = contact.poly.height
contact_m1_width = contact.poly.second_layer_height
contact_m1_height = contact.poly.second_layer_width
contact_width = contact.polym1.height
contact_m1_width = contact.polym1.second_layer_height
contact_m1_height = contact.polym1.second_layer_width
directions = ("H", "V")
else:
contact_width = contact.poly.width
contact_m1_width = contact.poly.second_layer_width
contact_m1_height = contact.poly.second_layer_height
contact_width = contact.polym1.width
contact_m1_width = contact.polym1.second_layer_width
contact_m1_height = contact.polym1.second_layer_height
directions = ("V", "H")
if position == "center":
@@ -103,7 +103,7 @@ class pgate(design.design):
+ vector(0.5 * self.poly_width, 0)
elif position == "farleft":
contact_offset = left_gate_offset \
- vector(0.5 * contact.poly.width, 0)
- vector(0.5 * contact.polym1.width, 0)
elif position == "left":
contact_offset = left_gate_offset \
- vector(0.5 * contact_width - 0.5 * self.poly_width, 0)
@@ -131,7 +131,7 @@ class pgate(design.design):
+ left_gate_offset.scale(0.5, 0)
self.add_rect_center(layer="poly",
offset=mid_point,
height=contact.poly.first_layer_width,
height=contact.polym1.first_layer_width,
width=left_gate_offset.x - contact_offset.x)
def extend_wells(self, middle_position):
compiler/pgates/pinv.py
+2 -2
View File
@@ -95,8 +95,8 @@ class pinv(pgate.pgate):
tx_type="pmos")
tx_height = nmos.poly_height + pmos.poly_height
# rotated m1 pitch or poly to active spacing
min_channel = max(contact.poly.width + self.m1_space,
contact.poly.width + 2 * self.poly_to_active)
min_channel = max(contact.polym1.width + self.m1_space,
contact.polym1.width + 2 * self.poly_to_active)
# This is the extra space needed to ensure DRC rules
# to the active contacts
compiler/pgates/pnand2.py
+2 -2
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@@ -85,7 +85,7 @@ class pnand2(pgate.pgate):
""" Pre-compute some handy layout parameters. """
# metal spacing to allow contacts on any layer
self.input_spacing = max(self.poly_space + contact.poly.first_layer_width,
self.input_spacing = max(self.poly_space + contact.polym1.first_layer_width,
self.m1_space + contact.m1m2.first_layer_width,
self.m2_space + contact.m2m3.first_layer_width,
self.m3_space + contact.m2m3.second_layer_width)
@@ -98,7 +98,7 @@ class pnand2(pgate.pgate):
# Two PMOS devices and a well contact. Separation between each.
# Enclosure space on the sides.
self.well_width = 2 * self.pmos.active_width + contact.active.width \
self.well_width = 2 * self.pmos.active_width + contact.activem1.width \
+ 2 * self.active_space \
+ 2 * self.well_enclose_active
compiler/pgates/pnand3.py
+2 -2
View File
@@ -202,10 +202,10 @@ class pnand3(pgate.pgate):
# wire space or wire and one contact space
metal_spacing = max(self.m1_space + self.m1_width,
self.m2_space + self.m2_width,
self.m1_space + 0.5 *contact.poly.width + 0.5 * self.m1_width)
self.m1_space + 0.5 *contact.polym1.width + 0.5 * self.m1_width)
active_spacing = max(self.m1_space,
0.5 * contact.poly.first_layer_width + self.poly_to_active)
0.5 * contact.polym1.first_layer_width + self.poly_to_active)
inputC_yoffset = self.nmos3_pos.y + self.nmos.active_height + active_spacing
self.route_input_gate(self.pmos3_inst,
self.nmos3_inst,
compiler/pgates/pnor2.py
+1 -1
View File
@@ -84,7 +84,7 @@ class pnor2(pgate.pgate):
""" Pre-compute some handy layout parameters. """
# metal spacing to allow contacts on any layer
self.input_spacing = max(self.poly_space + contact.poly.first_layer_width,
self.input_spacing = max(self.poly_space + contact.polym1.first_layer_width,
self.m1_space + contact.m1m2.first_layer_width,
self.m2_space + contact.m2m3.first_layer_width,
self.m3_space + contact.m2m3.second_layer_width)
compiler/pgates/precharge.py
+3 -3
View File
@@ -121,7 +121,7 @@ class precharge(design.design):
self.lower_pmos_inst.place(self.lower_pmos_position)
# adds the upper pmos(s) to layout
ydiff = self.pmos.height + 2 * self.m1_space + contact.poly.width
ydiff = self.pmos.height + 2 * self.m1_space + contact.polym1.width
self.upper_pmos1_pos = self.lower_pmos_position + vector(0, ydiff)
self.upper_pmos1_inst.place(self.upper_pmos1_pos)
@@ -175,7 +175,7 @@ class precharge(design.design):
# adds the contact from active to metal1
well_contact_pos = self.upper_pmos1_inst.get_pin("D").center().scale(1, 0) \
+ vector(0, self.upper_pmos1_inst.uy() + contact.well.height / 2 \
+ vector(0, self.upper_pmos1_inst.uy() + contact.activem1.height / 2 \
+ self.well_extend_active)
self.add_via_center(layers=self.active_stack,
offset=well_contact_pos,
@@ -183,7 +183,7 @@ class precharge(design.design):
well_type="n")
# leave an extra pitch for the height
self.height = well_contact_pos.y + contact.well.height + self.m1_pitch
self.height = well_contact_pos.y + contact.activem1.height + self.m1_pitch
# nwell should span the whole design since it is pmos only
self.add_rect(layer="nwell",
compiler/pgates/ptristate_inv.py
+3 -3
View File
@@ -80,7 +80,7 @@ class ptristate_inv(pgate.pgate):
# Height is an input parameter, so it is not recomputed.
# Make sure we can put a well above and below
self.top_bottom_space = max(contact.well.width, contact.well.height)
self.top_bottom_space = max(contact.activem1.width, contact.activem1.height)
def add_ptx(self):
@@ -138,8 +138,8 @@ class ptristate_inv(pgate.pgate):
"""
pmos_yoff = self.height - self.pmos.active_height \
- self.top_bottom_space - 0.5 * contact.well.height
nmos_yoff = self.top_bottom_space + 0.5 * contact.well.height
- self.top_bottom_space - 0.5 * contact.activem1.height
nmos_yoff = self.top_bottom_space + 0.5 * contact.activem1.height
# Tristate transistors
pmos1_pos = vector(self.pmos.active_offset.x, pmos_yoff)