Standardize contact names.

This commit is contained in:
Matt Guthaus
2019-12-17 15:55:20 -08:00
parent 8e151553e4
commit aceaa9fb21
8 changed files with 33 additions and 33 deletions
+12 -12
View File
@@ -213,7 +213,7 @@ class pbitcell(bitcell_base.bitcell_base):
# y-offset for the access transistor's gate contact
self.gate_contact_yoffset = max_contact_extension + self.m2_space \
+ 0.5 * max(contact.poly.height, contact.m1m2.height)
+ 0.5 * max(contact.polym1.height, contact.m1m2.height)
# y-position of access transistors
self.port_ypos = self.m1_space + 0.5 * contact.m1m2.height + self.gate_contact_yoffset
@@ -234,7 +234,7 @@ class pbitcell(bitcell_base.bitcell_base):
self.read_port_spacing = self.bitline_offset + self.m2_space
# spacing between cross coupled inverters
self.inverter_to_inverter_spacing = contact.poly.width + self.m1_space
self.inverter_to_inverter_spacing = contact.polym1.width + self.m1_space
# calculations related to inverter connections
inverter_pmos_contact_extension = 0.5 * \
@@ -243,19 +243,19 @@ class pbitcell(bitcell_base.bitcell_base):
(self.inverter_nmos.active_contact.height - self.inverter_nmos.active_height)
self.inverter_gap = max(self.poly_to_active,
self.m1_space + inverter_nmos_contact_extension) \
+ self.poly_to_contact + 2 * contact.poly.width \
+ self.poly_to_contact + 2 * contact.polym1.width \
+ self.m1_space + inverter_pmos_contact_extension
self.cross_couple_lower_ypos = self.inverter_nmos_ypos \
+ self.inverter_nmos.active_height \
+ max(self.poly_to_active,
self.m1_space + inverter_nmos_contact_extension) \
+ 0.5 * contact.poly.width
+ 0.5 * contact.polym1.width
self.cross_couple_upper_ypos = self.inverter_nmos_ypos \
+ self.inverter_nmos.active_height \
+ max(self.poly_to_active,
self.m1_space + inverter_nmos_contact_extension) \
+ self.poly_to_contact \
+ 1.5 * contact.poly.width
+ 1.5 * contact.polym1.width
# spacing between wordlines (and gnd)
self.m1_offset = -0.5 * self.m1_width
@@ -263,7 +263,7 @@ class pbitcell(bitcell_base.bitcell_base):
# spacing for vdd
implant_constraint = max(inverter_pmos_contact_extension, 0) \
+ 2 * self.implant_enclose_active \
+ 0.5 * (contact.well.width - self.m1_width)
+ 0.5 * (contact.activem1.width - self.m1_width)
metal1_constraint = max(inverter_pmos_contact_extension, 0) + self.m1_space
self.vdd_offset = max(implant_constraint, metal1_constraint) + 0.5*self.m1_width
@@ -367,16 +367,16 @@ class pbitcell(bitcell_base.bitcell_base):
self.add_path("m1",
[self.inverter_nmos_left.get_pin("D").uc(),
self.inverter_pmos_left.get_pin("D").bc()],
width=contact.active.second_layer_width)
width=contact.activem1.second_layer_width)
self.add_path("m1",
[self.inverter_nmos_right.get_pin("S").uc(),
self.inverter_pmos_right.get_pin("S").bc()],
width=contact.active.second_layer_width)
width=contact.activem1.second_layer_width)
# add contacts to connect gate poly to drain/source
# metal1 (to connect Q to Q_bar)
contact_offset_left = vector(self.inverter_nmos_left.get_pin("D").rc().x \
+ 0.5 * contact.poly.height,
+ 0.5 * contact.polym1.height,
self.cross_couple_upper_ypos)
self.add_via_center(layers=self.poly_stack,
offset=contact_offset_left,
@@ -384,7 +384,7 @@ class pbitcell(bitcell_base.bitcell_base):
contact_offset_right = vector(self.inverter_nmos_right.get_pin("S").lc().x \
- 0.5*contact.poly.height,
- 0.5*contact.polym1.height,
self.cross_couple_lower_ypos)
self.add_via_center(layers=self.poly_stack,
offset=contact_offset_right,
@@ -926,14 +926,14 @@ class pbitcell(bitcell_base.bitcell_base):
"""
# add poly to metal1 contacts for gates of the inverters
left_storage_contact = vector(self.inverter_nmos_left.get_pin("G").lc().x \
- self.poly_to_contact - 0.5*contact.poly.width,
- self.poly_to_contact - 0.5*contact.polym1.width,
self.cross_couple_upper_ypos)
self.add_via_center(layers=self.poly_stack,
offset=left_storage_contact,
directions=("H", "H"))
right_storage_contact = vector(self.inverter_nmos_right.get_pin("G").rc().x \
+ self.poly_to_contact + 0.5*contact.poly.width,
+ self.poly_to_contact + 0.5*contact.polym1.width,
self.cross_couple_upper_ypos)
self.add_via_center(layers=self.poly_stack,
offset=right_storage_contact,