232 lines
7.2 KiB
C
232 lines
7.2 KiB
C
/**********
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Copyright 1991 Regents of the University of California. All rights reserved.
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Authors: 1987 Karti Mayaram, 1991 David Gates
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**********/
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/*
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* Constants used by the numerical simulation routines
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*/
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/* Member of CIDER device simulator
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* Version: 1b1
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*/
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#ifndef NUMCONST_H
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#define NUMCONST_H
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/* Mathematical Constants */
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#ifdef PI
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#undef PI
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#endif
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#define PI 3.14159265358973923846264338327950288419716939937511
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#define TWO_PI (2.0 * PI)
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#define ROOT_TWO 1.41421356237309504880168872420969807856967187537694
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/* Basic Physical Constants */
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#ifdef CHARGE
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#undef CHARGE
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#endif
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#define CHARGE 1.602191770e-19 /* C */
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#define BOLTZMANN_CONSTANT 1.38062259e-23 /* J/oK */
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#define VELOCITY_OF_LIGHT 2.997924562e8 /* CM/S */
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#define ELECTRON_MASS 9.10955854e-31 /* kG */
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#define ZERO_DEGREES_CELSIUS 273.15 /* oK */
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#define EPS0 8.854e-14 /* F/CM */
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/* Physical Constants of Silicon, GaAs, SiO2, Si3N4 */
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#define EPS_REL_SI 11.7 /* ~EPS0 */
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#define EPS_SI EPS0 * EPS_REL_SI /* F/CM */
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#define EPS_REL_GA 10.9 /* ~EPS0 */
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#define EPS_GA EPS0 * EPS_REL_GA /* F/CM */
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#define EPS_REL_OX 3.9 /* ~EPS0 */
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#define EPS_OX EPS0 * EPS_REL_OX /* F/CM */
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#define EPS_REL_NI 7.5 /* ~EPS0 */
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#define EPS_NI EPS0 * EPS_REL_NI /* F/CM */
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/* Work Function, Affinity, Band & Bandgap Parameters */
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#define AFFIN_SI 4.05 /* eV */
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#define AFFIN_GA 4.07 /* eV */
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#define AFFIN_OX 0.95 /* eV */
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#define AFFIN_NI 3.10 /* eV */
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#define PHI_METAL 4.10 /* eV */
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#define PHI_ALUM 4.10 /* eV */
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#define PHI_GOLD 4.75 /* eV */
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#define EGAP300_SI 1.1245 /* eV */
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#define EGAP300_GA 1.43 /* eV */
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#define EGAP300_OX 9.00 /* eV */
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#define EGAP300_NI 4.70 /* eV */
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#define DGAPDT_SI 4.73e-4 /* eV/oK */
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#define DGAPDT_GA 5.405e-4 /* eV/oK */
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#define TREF_EG_SI 636.0 /* oK */
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#define TREF_EG_GA 204.0 /* oK */
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#define NCV_NOM 2.509e19 /* CM^-3 */
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#define M_N_SI 1.447 /* ~ELECTRON_MASS */
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#define M_P_SI 1.08 /* ~ELECTRON_MASS */
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#define M_N_GA 7.05e-2 /* ~ELECTRON_MASS */
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#define M_P_GA 0.427 /* ~ELECTRON_MASS */
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/* Physical Model Parameters for Silicon and GaAs*/
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/* N = electrons, P = holes */
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/* Effective Richardson Constants (ref. PISCES) */
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#define A_RICH_N_SI 110.0 /* A/CM^2/oK^2 */
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#define A_RICH_P_SI 30.0 /* A/CM^2/oK^2 */
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#define A_RICH_N_GA 6.2857 /* A/CM^2/oK^2 */
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#define A_RICH_P_GA 105.0 /* A/CM^2/oK^2 */
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/* Auger Recombination (ref. PISCES, SOLL90) */
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#define C_AUG_N_SI 1.8e-31 /* CM^6/S */
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#define C_AUG_P_SI 8.3e-32 /* CM^6/S */
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#define C_AUG_N_GA 2.8e-31 /* CM^6/S */
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#define C_AUG_P_GA 9.9e-32 /* CM^6/S */
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/* SRH Recombination (ref. SOLL90) */
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#define TAU0_N_SI 3.0e-5 /* S */
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#define NSRH_N_SI 1.0e17 /* CM^-3 */
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#define S_N_SI 1.0e4 /* CM/S */
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#define TAU0_P_SI 1.0e-5 /* S */
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#define NSRH_P_SI 1.0e17 /* CM^-3 */
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#define S_P_SI 1.0e4 /* CM/S */
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#define TAU0_N_GA 1.0e-7 /* S */
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#define NSRH_N_GA 5.0e16 /* CM^-3 */
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#define S_N_GA 1.0e4 /* CM/S */
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#define TAU0_P_GA 1.0e-7 /* S */
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#define NSRH_P_GA 5.0e16 /* CM^-3 */
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#define S_P_GA 1.0e4 /* CM/S */
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/* Bandgap Narrowing (ref. SOLL90) */
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#define DGAPDN_N 1.2e-2 /* V */
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#define NBGN_N 1.0e18 /* CM^-3 */
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#define DGAPDN_P 9.7e-3 /* V */
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#define NBGN_P 1.0e17 /* CM^-3 */
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/* Mobility Models : */
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/* Scharfetter-Gummel (SG) mobility (ref. SCHA69) */
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#define SG_MUMAX_N 1400.0
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#define SG_MUMIN_N 75.0
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#define SG_NTREF_N 3.0e16
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#define SG_NTEXP_N 0.5
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#define SG_VSAT_N 1.036e7
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#define SG_VWARM_N 4.9e6
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#define SG_FIT_N 8.8
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#define SG_MUMAX_P 480.0
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#define SG_MUMIN_P 53.0
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#define SG_NTREF_P 4.0e16
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#define SG_NTEXP_P 0.5
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#define SG_VSAT_P 1.2e7
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#define SG_VWARM_P 2.928e6
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#define SG_FIT_P 1.6
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/* Caughey-Thomas (CT) mobility (ref. CAUG67) */
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#define CT_MUMAX_N 1360.0
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#define CT_MUMIN_N 92.0
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#define CT_NTREF_N 1.3e17
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#define CT_NTEXP_N 0.91
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#define CT_VSAT_N 1.1e7
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#define CT_MUMAX_P 520.0
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#define CT_MUMIN_P 65.0
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#define CT_NTREF_P 2.4e17
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#define CT_NTEXP_P 0.61
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#define CT_VSAT_P 9.5e6
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/* Arora (AR) mobility (ref. AROR82) */
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#define AR_MUMAX_N 1340.0
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#define AR_MUMIN_N 88.0
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#define AR_NTREF_N 1.26e17
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#define AR_NTEXP_N 0.88
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#define AR_VSAT_N 1.38e7
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#define AR_MUMAX_P 461.3
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#define AR_MUMIN_P 54.3
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#define AR_NTREF_P 2.35e17
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#define AR_NTEXP_P 0.88
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#define AR_VSAT_P 9.0e6
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/* Minority Carrier mobility (ref. SOLL90) */
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/*
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* These parameters are flawed in that they don't match the majority
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* carrier mobility when the concentration drops to zero.
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* Carrier heating effects must be handled by a different model.
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*/
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#define UF_MUMAX_N 1412.0
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#define UF_MUMIN_N 232.0
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#define UF_NTREF_N 8.0e16
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#define UF_NTEXP_N 0.9
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#define UF_MUMAX_P 500.0
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#define UF_MUMIN_P 130.0
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#define UF_NTREF_P 8.0e17
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#define UF_NTEXP_P 1.25
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/* Temperature-Dependence of Arora mobility */
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/* Applicable to all above models, but not necessarily accurate. */
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#define TD_TREFVS_N 175.0
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#define TD_TREFVS_P 312.0
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#define TD_EXPMUMAX_N -2.33
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#define TD_EXPMUMAX_P -2.23
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#define TD_EXPMUMIN_N -0.57
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#define TD_EXPMUMIN_P -0.57
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#define TD_EXPNTREF_N 2.4
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#define TD_EXPNTREF_P 2.4
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#define TD_EXPNTEXP_N -0.146
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#define TD_EXPNTEXP_P -0.146
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/*
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* Inversion-layers are handled differently. They don't fit into the nice
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* pattern established above for bulk mobility.
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*/
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/* Surface mobility (ref. GATE90) */
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#define MUS_N 991.0 /* CM^2/VS */
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#define THETAA_N 2.67e-6 /* CM/V */
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#define THETAB_N 4.18e-14 /* CM^2/V^2 */
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#define SALPHA_N 1.0 / 2.0 /* --- */
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#define SBETA_N 1.0 / 2.0 /* --- */
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#define MUS_P 240.0 /* CM^2/VS */
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#define THETAA_P 3.07e-6 /* CM/V */
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#define THETAB_P 0.0 /* CM^2/V^2 */
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#define SALPHA_P 2.0 / 3.0 /* --- */
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#define SBETA_P 1.0 / 3.0 /* --- */
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/* Gallium-Arsenide (GA) mobility (ref. PISCES) */
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#define GA_MUMAX_N 5000.0
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#define GA_MUMIN_N 50.0
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#define GA_NTREF_N 1.0e17
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#define GA_NTEXP_N 1.0
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#define GA_VSAT_N 7.7e6
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#define GA_VWARM_N 2.31e7
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#define GA_MUMAX_P 400.0
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#define GA_MUMIN_P 40.0
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#define GA_NTREF_P 1.0e17
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#define GA_NTEXP_P 1.0
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#define GA_VSAT_P 7.7e6
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#define GA_VWARM_P 2.31e7
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/* END OF MOBILITY MODELS */
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/* Freeze Out / Incomplete Ionization Parameters */
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#define E_ARS_SI 0.049 /* eV (Arsenic) */
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#define E_DON_SI 0.044 /* eV (Phosphorus) */
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#define E_ACC_SI 0.045 /* eV (Boron) */
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#define G_DON_SI 2.0 /* --- */
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#define G_ACC_SI 4.0 /* --- */
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#define E_DON_GA 0.005 /* eV */
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#define E_ACC_GA 0.005 /* eV */
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#define G_DON_GA 2.0 /* --- */
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#define G_ACC_GA 2.0 /* --- */
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/* Impact Ionization / Avalanche Generation Parameters */
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/* These are for Silicon. Need better GaAs parameters. */
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#define AII_N 7.03e5
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#define BII_N 1.231e6
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#define AII_P 1.582e6
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#define BII_P 2.036e6
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/* Default Surface-State / Fixed-Charge Density */
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#define NSS 0.0 /* CM^-2 */
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/* Default abstol for Poisson and Current-Continuity Equations */
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#define DABSTOL1D 1.0e-12 /* --- */
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#define DABSTOL2D 1.0e-8 /* --- */
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#endif /* NUMCONST_H */
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