232 lines
7.2 KiB
C
232 lines
7.2 KiB
C
|
/**********
|
||
|
|
Copyright 1991 Regents of the University of California. All rights reserved.
|
||
|
|
Authors: 1987 Karti Mayaram, 1991 David Gates
|
||
|
|
**********/
|
||
|
|
/*
|
||
|
|
* Constants used by the numerical simulation routines
|
||
|
|
*/
|
||
|
|
|
||
|
|
/* Member of CIDER device simulator
|
||
|
|
* Version: 1b1
|
||
|
|
*/
|
||
|
|
|
||
|
|
#ifndef NUMCONST_H
|
||
|
|
#define NUMCONST_H
|
||
|
|
|
||
|
|
/* Mathematical Constants */
|
||
|
|
#ifdef PI
|
||
|
|
#undef PI
|
||
|
|
#endif
|
||
|
|
#define PI 3.14159265358973923846264338327950288419716939937511
|
||
|
|
#define TWO_PI (2.0 * PI)
|
||
|
|
#define ROOT_TWO 1.41421356237309504880168872420969807856967187537694
|
||
|
|
|
||
|
|
/* Basic Physical Constants */
|
||
|
|
#ifdef CHARGE
|
||
|
|
#undef CHARGE
|
||
|
|
#endif
|
||
|
|
#define CHARGE 1.602191770e-19 /* C */
|
||
|
|
#define BOLTZMANN_CONSTANT 1.38062259e-23 /* J/oK */
|
||
|
|
#define VELOCITY_OF_LIGHT 2.997924562e8 /* CM/S */
|
||
|
|
#define ELECTRON_MASS 9.10955854e-31 /* kG */
|
||
|
|
#define ZERO_DEGREES_CELSIUS 273.15 /* oK */
|
||
|
|
#define EPS0 8.854e-14 /* F/CM */
|
||
|
|
|
||
|
|
|
||
|
|
/* Physical Constants of Silicon, GaAs, SiO2, Si3N4 */
|
||
|
|
#define EPS_REL_SI 11.7 /* ~EPS0 */
|
||
|
|
#define EPS_SI EPS0 * EPS_REL_SI /* F/CM */
|
||
|
|
#define EPS_REL_GA 10.9 /* ~EPS0 */
|
||
|
|
#define EPS_GA EPS0 * EPS_REL_GA /* F/CM */
|
||
|
|
#define EPS_REL_OX 3.9 /* ~EPS0 */
|
||
|
|
#define EPS_OX EPS0 * EPS_REL_OX /* F/CM */
|
||
|
|
#define EPS_REL_NI 7.5 /* ~EPS0 */
|
||
|
|
#define EPS_NI EPS0 * EPS_REL_NI /* F/CM */
|
||
|
|
|
||
|
|
/* Work Function, Affinity, Band & Bandgap Parameters */
|
||
|
|
#define AFFIN_SI 4.05 /* eV */
|
||
|
|
#define AFFIN_GA 4.07 /* eV */
|
||
|
|
#define AFFIN_OX 0.95 /* eV */
|
||
|
|
#define AFFIN_NI 3.10 /* eV */
|
||
|
|
#define PHI_METAL 4.10 /* eV */
|
||
|
|
#define PHI_ALUM 4.10 /* eV */
|
||
|
|
#define PHI_GOLD 4.75 /* eV */
|
||
|
|
|
||
|
|
#define EGAP300_SI 1.1245 /* eV */
|
||
|
|
#define EGAP300_GA 1.43 /* eV */
|
||
|
|
#define EGAP300_OX 9.00 /* eV */
|
||
|
|
#define EGAP300_NI 4.70 /* eV */
|
||
|
|
#define DGAPDT_SI 4.73e-4 /* eV/oK */
|
||
|
|
#define DGAPDT_GA 5.405e-4 /* eV/oK */
|
||
|
|
#define TREF_EG_SI 636.0 /* oK */
|
||
|
|
#define TREF_EG_GA 204.0 /* oK */
|
||
|
|
|
||
|
|
#define NCV_NOM 2.509e19 /* CM^-3 */
|
||
|
|
#define M_N_SI 1.447 /* ~ELECTRON_MASS */
|
||
|
|
#define M_P_SI 1.08 /* ~ELECTRON_MASS */
|
||
|
|
#define M_N_GA 7.05e-2 /* ~ELECTRON_MASS */
|
||
|
|
#define M_P_GA 0.427 /* ~ELECTRON_MASS */
|
||
|
|
|
||
|
|
/* Physical Model Parameters for Silicon and GaAs*/
|
||
|
|
/* N = electrons, P = holes */
|
||
|
|
|
||
|
|
/* Effective Richardson Constants (ref. PISCES) */
|
||
|
|
#define A_RICH_N_SI 110.0 /* A/CM^2/oK^2 */
|
||
|
|
#define A_RICH_P_SI 30.0 /* A/CM^2/oK^2 */
|
||
|
|
#define A_RICH_N_GA 6.2857 /* A/CM^2/oK^2 */
|
||
|
|
#define A_RICH_P_GA 105.0 /* A/CM^2/oK^2 */
|
||
|
|
|
||
|
|
/* Auger Recombination (ref. PISCES, SOLL90) */
|
||
|
|
#define C_AUG_N_SI 1.8e-31 /* CM^6/S */
|
||
|
|
#define C_AUG_P_SI 8.3e-32 /* CM^6/S */
|
||
|
|
#define C_AUG_N_GA 2.8e-31 /* CM^6/S */
|
||
|
|
#define C_AUG_P_GA 9.9e-32 /* CM^6/S */
|
||
|
|
|
||
|
|
/* SRH Recombination (ref. SOLL90) */
|
||
|
|
#define TAU0_N_SI 3.0e-5 /* S */
|
||
|
|
#define NSRH_N_SI 1.0e17 /* CM^-3 */
|
||
|
|
#define S_N_SI 1.0e4 /* CM/S */
|
||
|
|
#define TAU0_P_SI 1.0e-5 /* S */
|
||
|
|
#define NSRH_P_SI 1.0e17 /* CM^-3 */
|
||
|
|
#define S_P_SI 1.0e4 /* CM/S */
|
||
|
|
#define TAU0_N_GA 1.0e-7 /* S */
|
||
|
|
#define NSRH_N_GA 5.0e16 /* CM^-3 */
|
||
|
|
#define S_N_GA 1.0e4 /* CM/S */
|
||
|
|
#define TAU0_P_GA 1.0e-7 /* S */
|
||
|
|
#define NSRH_P_GA 5.0e16 /* CM^-3 */
|
||
|
|
#define S_P_GA 1.0e4 /* CM/S */
|
||
|
|
|
||
|
|
/* Bandgap Narrowing (ref. SOLL90) */
|
||
|
|
#define DGAPDN_N 1.2e-2 /* V */
|
||
|
|
#define NBGN_N 1.0e18 /* CM^-3 */
|
||
|
|
#define DGAPDN_P 9.7e-3 /* V */
|
||
|
|
#define NBGN_P 1.0e17 /* CM^-3 */
|
||
|
|
|
||
|
|
/* Mobility Models : */
|
||
|
|
/* Scharfetter-Gummel (SG) mobility (ref. SCHA69) */
|
||
|
|
#define SG_MUMAX_N 1400.0
|
||
|
|
#define SG_MUMIN_N 75.0
|
||
|
|
#define SG_NTREF_N 3.0e16
|
||
|
|
#define SG_NTEXP_N 0.5
|
||
|
|
#define SG_VSAT_N 1.036e7
|
||
|
|
#define SG_VWARM_N 4.9e6
|
||
|
|
#define SG_FIT_N 8.8
|
||
|
|
#define SG_MUMAX_P 480.0
|
||
|
|
#define SG_MUMIN_P 53.0
|
||
|
|
#define SG_NTREF_P 4.0e16
|
||
|
|
#define SG_NTEXP_P 0.5
|
||
|
|
#define SG_VSAT_P 1.2e7
|
||
|
|
#define SG_VWARM_P 2.928e6
|
||
|
|
#define SG_FIT_P 1.6
|
||
|
|
|
||
|
|
/* Caughey-Thomas (CT) mobility (ref. CAUG67) */
|
||
|
|
#define CT_MUMAX_N 1360.0
|
||
|
|
#define CT_MUMIN_N 92.0
|
||
|
|
#define CT_NTREF_N 1.3e17
|
||
|
|
#define CT_NTEXP_N 0.91
|
||
|
|
#define CT_VSAT_N 1.1e7
|
||
|
|
#define CT_MUMAX_P 520.0
|
||
|
|
#define CT_MUMIN_P 65.0
|
||
|
|
#define CT_NTREF_P 2.4e17
|
||
|
|
#define CT_NTEXP_P 0.61
|
||
|
|
#define CT_VSAT_P 9.5e6
|
||
|
|
|
||
|
|
/* Arora (AR) mobility (ref. AROR82) */
|
||
|
|
#define AR_MUMAX_N 1340.0
|
||
|
|
#define AR_MUMIN_N 88.0
|
||
|
|
#define AR_NTREF_N 1.26e17
|
||
|
|
#define AR_NTEXP_N 0.88
|
||
|
|
#define AR_VSAT_N 1.38e7
|
||
|
|
#define AR_MUMAX_P 461.3
|
||
|
|
#define AR_MUMIN_P 54.3
|
||
|
|
#define AR_NTREF_P 2.35e17
|
||
|
|
#define AR_NTEXP_P 0.88
|
||
|
|
#define AR_VSAT_P 9.0e6
|
||
|
|
|
||
|
|
/* Minority Carrier mobility (ref. SOLL90) */
|
||
|
|
/*
|
||
|
|
* These parameters are flawed in that they don't match the majority
|
||
|
|
* carrier mobility when the concentration drops to zero.
|
||
|
|
* Carrier heating effects must be handled by a different model.
|
||
|
|
*/
|
||
|
|
#define UF_MUMAX_N 1412.0
|
||
|
|
#define UF_MUMIN_N 232.0
|
||
|
|
#define UF_NTREF_N 8.0e16
|
||
|
|
#define UF_NTEXP_N 0.9
|
||
|
|
#define UF_MUMAX_P 500.0
|
||
|
|
#define UF_MUMIN_P 130.0
|
||
|
|
#define UF_NTREF_P 8.0e17
|
||
|
|
#define UF_NTEXP_P 1.25
|
||
|
|
|
||
|
|
/* Temperature-Dependence of Arora mobility */
|
||
|
|
/* Applicable to all above models, but not necessarily accurate. */
|
||
|
|
#define TD_TREFVS_N 175.0
|
||
|
|
#define TD_TREFVS_P 312.0
|
||
|
|
#define TD_EXPMUMAX_N -2.33
|
||
|
|
#define TD_EXPMUMAX_P -2.23
|
||
|
|
#define TD_EXPMUMIN_N -0.57
|
||
|
|
#define TD_EXPMUMIN_P -0.57
|
||
|
|
#define TD_EXPNTREF_N 2.4
|
||
|
|
#define TD_EXPNTREF_P 2.4
|
||
|
|
#define TD_EXPNTEXP_N -0.146
|
||
|
|
#define TD_EXPNTEXP_P -0.146
|
||
|
|
|
||
|
|
/*
|
||
|
|
* Inversion-layers are handled differently. They don't fit into the nice
|
||
|
|
* pattern established above for bulk mobility.
|
||
|
|
*/
|
||
|
|
/* Surface mobility (ref. GATE90) */
|
||
|
|
#define MUS_N 991.0 /* CM^2/VS */
|
||
|
|
#define THETAA_N 2.67e-6 /* CM/V */
|
||
|
|
#define THETAB_N 4.18e-14 /* CM^2/V^2 */
|
||
|
|
#define SALPHA_N 1.0 / 2.0 /* --- */
|
||
|
|
#define SBETA_N 1.0 / 2.0 /* --- */
|
||
|
|
#define MUS_P 240.0 /* CM^2/VS */
|
||
|
|
#define THETAA_P 3.07e-6 /* CM/V */
|
||
|
|
#define THETAB_P 0.0 /* CM^2/V^2 */
|
||
|
|
#define SALPHA_P 2.0 / 3.0 /* --- */
|
||
|
|
#define SBETA_P 1.0 / 3.0 /* --- */
|
||
|
|
|
||
|
|
/* Gallium-Arsenide (GA) mobility (ref. PISCES) */
|
||
|
|
#define GA_MUMAX_N 5000.0
|
||
|
|
#define GA_MUMIN_N 50.0
|
||
|
|
#define GA_NTREF_N 1.0e17
|
||
|
|
#define GA_NTEXP_N 1.0
|
||
|
|
#define GA_VSAT_N 7.7e6
|
||
|
|
#define GA_VWARM_N 2.31e7
|
||
|
|
#define GA_MUMAX_P 400.0
|
||
|
|
#define GA_MUMIN_P 40.0
|
||
|
|
#define GA_NTREF_P 1.0e17
|
||
|
|
#define GA_NTEXP_P 1.0
|
||
|
|
#define GA_VSAT_P 7.7e6
|
||
|
|
#define GA_VWARM_P 2.31e7
|
||
|
|
|
||
|
|
/* END OF MOBILITY MODELS */
|
||
|
|
|
||
|
|
/* Freeze Out / Incomplete Ionization Parameters */
|
||
|
|
#define E_ARS_SI 0.049 /* eV (Arsenic) */
|
||
|
|
#define E_DON_SI 0.044 /* eV (Phosphorus) */
|
||
|
|
#define E_ACC_SI 0.045 /* eV (Boron) */
|
||
|
|
#define G_DON_SI 2.0 /* --- */
|
||
|
|
#define G_ACC_SI 4.0 /* --- */
|
||
|
|
#define E_DON_GA 0.005 /* eV */
|
||
|
|
#define E_ACC_GA 0.005 /* eV */
|
||
|
|
#define G_DON_GA 2.0 /* --- */
|
||
|
|
#define G_ACC_GA 2.0 /* --- */
|
||
|
|
|
||
|
|
/* Impact Ionization / Avalanche Generation Parameters */
|
||
|
|
/* These are for Silicon. Need better GaAs parameters. */
|
||
|
|
#define AII_N 7.03e5
|
||
|
|
#define BII_N 1.231e6
|
||
|
|
#define AII_P 1.582e6
|
||
|
|
#define BII_P 2.036e6
|
||
|
|
|
||
|
|
/* Default Surface-State / Fixed-Charge Density */
|
||
|
|
#define NSS 0.0 /* CM^-2 */
|
||
|
|
|
||
|
|
/* Default abstol for Poisson and Current-Continuity Equations */
|
||
|
|
#define DABSTOL1D 1.0e-12 /* --- */
|
||
|
|
#define DABSTOL2D 1.0e-8 /* --- */
|
||
|
|
|
||
|
|
#endif /* NUMCONST_H */
|