hicum2, use (*desc*) instead of (*info*)
This commit is contained in:
rlar
Holger Vogt
parent
e37047f8f7
commit
cda2684857
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@ -551,156 +551,156 @@ branch (n2 ) b_n2;
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//Transfer current
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parameter real c10 = 2.0E-30 from [0:1] `ATTR(info="GICCR constant" unit="A^2s");
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parameter real qp0 = 2.0E-14 from (0:1] `ATTR(info="Zero-bias hole charge" unit="Coul");
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parameter real ich = 0.0 from [0:inf) `ATTR(info="High-current correction for 2D and 3D effects" unit="A"); //`0' signifies infinity
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parameter real hfe = 1.0 from [0:inf] `ATTR(info="Emitter minority charge weighting factor in HBTs");
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parameter real hfc = 1.0 from [0:inf] `ATTR(info="Collector minority charge weighting factor in HBTs");
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parameter real hjei = 1.0 from [0:100] `ATTR(info="B-E depletion charge weighting factor in HBTs");
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parameter real hjci = 1.0 from [0:100] `ATTR(info="B-C depletion charge weighting factor in HBTs");
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parameter real c10 = 2.0E-30 from [0:1] `ATTR(desc="GICCR constant" unit="A^2s");
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parameter real qp0 = 2.0E-14 from (0:1] `ATTR(desc="Zero-bias hole charge" unit="Coul");
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parameter real ich = 0.0 from [0:inf) `ATTR(desc="High-current correction for 2D and 3D effects" unit="A"); //`0' signifies infinity
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parameter real hfe = 1.0 from [0:inf] `ATTR(desc="Emitter minority charge weighting factor in HBTs");
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parameter real hfc = 1.0 from [0:inf] `ATTR(desc="Collector minority charge weighting factor in HBTs");
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parameter real hjei = 1.0 from [0:100] `ATTR(desc="B-E depletion charge weighting factor in HBTs");
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parameter real hjci = 1.0 from [0:100] `ATTR(desc="B-C depletion charge weighting factor in HBTs");
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//Base-Emitter diode currents
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parameter real ibeis = 1.0E-18 from [0:1] `ATTR(info="Internal B-E saturation current" unit="A");
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parameter real mbei = 1.0 from (0:10] `ATTR(info="Internal B-E current ideality factor");
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parameter real ireis = 0.0 from [0:1] `ATTR(info="Internal B-E recombination saturation current" unit="A");
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parameter real mrei = 2.0 from (0:10] `ATTR(info="Internal B-E recombination current ideality factor");
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parameter real ibeps = 0.0 from [0:1] `ATTR(info="Peripheral B-E saturation current" unit="A");
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parameter real mbep = 1.0 from (0:10] `ATTR(info="Peripheral B-E current ideality factor");
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parameter real ireps = 0.0 from [0:1] `ATTR(info="Peripheral B-E recombination saturation current" unit="A");
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parameter real mrep = 2.0 from (0:10] `ATTR(info="Peripheral B-E recombination current ideality factor");
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parameter real mcf = 1.0 from (0:10] `ATTR(info="Non-ideality factor for III-V HBTs");
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parameter real ibeis = 1.0E-18 from [0:1] `ATTR(desc="Internal B-E saturation current" unit="A");
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parameter real mbei = 1.0 from (0:10] `ATTR(desc="Internal B-E current ideality factor");
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parameter real ireis = 0.0 from [0:1] `ATTR(desc="Internal B-E recombination saturation current" unit="A");
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parameter real mrei = 2.0 from (0:10] `ATTR(desc="Internal B-E recombination current ideality factor");
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parameter real ibeps = 0.0 from [0:1] `ATTR(desc="Peripheral B-E saturation current" unit="A");
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parameter real mbep = 1.0 from (0:10] `ATTR(desc="Peripheral B-E current ideality factor");
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parameter real ireps = 0.0 from [0:1] `ATTR(desc="Peripheral B-E recombination saturation current" unit="A");
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parameter real mrep = 2.0 from (0:10] `ATTR(desc="Peripheral B-E recombination current ideality factor");
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parameter real mcf = 1.0 from (0:10] `ATTR(desc="Non-ideality factor for III-V HBTs");
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//Transit time for excess recombination current at b-c barrier
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parameter real tbhrec = 0.0 from [0:inf) `ATTR(info="Base current recombination time constant at B-C barrier for high forward injection" unit="s");
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parameter real tbhrec = 0.0 from [0:inf) `ATTR(desc="Base current recombination time constant at B-C barrier for high forward injection" unit="s");
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//Base-Collector diode currents
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parameter real ibcis = 1.0E-16 from [0:1.0] `ATTR(info="Internal B-C saturation current" unit="A");
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parameter real mbci = 1.0 from (0:10] `ATTR(info="Internal B-C current ideality factor");
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parameter real ibcxs = 0.0 from [0:1.0] `ATTR(info="External B-C saturation current" unit="A");
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parameter real mbcx = 1.0 from (0:10] `ATTR(info="External B-C current ideality factor");
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parameter real ibcis = 1.0E-16 from [0:1.0] `ATTR(desc="Internal B-C saturation current" unit="A");
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parameter real mbci = 1.0 from (0:10] `ATTR(desc="Internal B-C current ideality factor");
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parameter real ibcxs = 0.0 from [0:1.0] `ATTR(desc="External B-C saturation current" unit="A");
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parameter real mbcx = 1.0 from (0:10] `ATTR(desc="External B-C current ideality factor");
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//Base-Emitter tunneling current
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parameter real ibets = 0.0 from [0:1] `ATTR(info="B-E tunneling saturation current" unit="A");
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parameter real abet = 40 from [0:inf) `ATTR(info="Exponent factor for tunneling current");
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parameter integer tunode= 1 from [0:1] `ATTR(info="Specifies the base node connection for the tunneling current"); // =1 signifies perimeter node
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parameter real ibets = 0.0 from [0:1] `ATTR(desc="B-E tunneling saturation current" unit="A");
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parameter real abet = 40 from [0:inf) `ATTR(desc="Exponent factor for tunneling current");
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parameter integer tunode= 1 from [0:1] `ATTR(desc="Specifies the base node connection for the tunneling current"); // =1 signifies perimeter node
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//Base-Collector avalanche current
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parameter real favl = 0.0 from [0:inf) `ATTR(info="Avalanche current factor" unit="1/V");
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parameter real qavl = 0.0 from [0:inf) `ATTR(info="Exponent factor for avalanche current" unit="Coul");
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parameter real alfav = 0.0 `ATTR(info="Relative TC for FAVL" unit="1/K");
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parameter real alqav = 0.0 `ATTR(info="Relative TC for QAVL" unit="1/K");
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parameter real favl = 0.0 from [0:inf) `ATTR(desc="Avalanche current factor" unit="1/V");
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parameter real qavl = 0.0 from [0:inf) `ATTR(desc="Exponent factor for avalanche current" unit="Coul");
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parameter real alfav = 0.0 `ATTR(desc="Relative TC for FAVL" unit="1/K");
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parameter real alqav = 0.0 `ATTR(desc="Relative TC for QAVL" unit="1/K");
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//Series resistances
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parameter real rbi0 = 0.0 from [0:inf) `ATTR(info="Zero bias internal base resistance" unit="Ohm");
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parameter real rbx = 0.0 from [0:inf) `ATTR(info="External base series resistance" unit="Ohm");
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parameter real fgeo = 0.6557 from [0:inf] `ATTR(info="Factor for geometry dependence of emitter current crowding");
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parameter real fdqr0 = 0.0 from [-0.5:100] `ATTR(info="Correction factor for modulation by B-E and B-C space charge layer");
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parameter real fcrbi = 0.0 from [0:1] `ATTR(info="Ratio of HF shunt to total internal capacitance (lateral NQS effect)");
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parameter real fqi = 1.0 from [0:1] `ATTR(info="Ration of internal to total minority charge");
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parameter real re = 0.0 from [0:inf) `ATTR(info="Emitter series resistance" unit="Ohm");
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parameter real rcx = 0.0 from [0:inf) `ATTR(info="External collector series resistance" unit="Ohm");
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parameter real rbi0 = 0.0 from [0:inf) `ATTR(desc="Zero bias internal base resistance" unit="Ohm");
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parameter real rbx = 0.0 from [0:inf) `ATTR(desc="External base series resistance" unit="Ohm");
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parameter real fgeo = 0.6557 from [0:inf] `ATTR(desc="Factor for geometry dependence of emitter current crowding");
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parameter real fdqr0 = 0.0 from [-0.5:100] `ATTR(desc="Correction factor for modulation by B-E and B-C space charge layer");
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parameter real fcrbi = 0.0 from [0:1] `ATTR(desc="Ratio of HF shunt to total internal capacitance (lateral NQS effect)");
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parameter real fqi = 1.0 from [0:1] `ATTR(desc="Ration of internal to total minority charge");
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parameter real re = 0.0 from [0:inf) `ATTR(desc="Emitter series resistance" unit="Ohm");
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parameter real rcx = 0.0 from [0:inf) `ATTR(desc="External collector series resistance" unit="Ohm");
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//Substrate transistor
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parameter real itss = 0.0 from [0:1.0] `ATTR(info="Substrate transistor transfer saturation current" unit="A");
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parameter real msf = 1.0 from (0:10] `ATTR(info="Forward ideality factor of substrate transfer current");
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parameter real iscs = 0.0 from [0:1.0] `ATTR(info="C-S diode saturation current" unit="A");
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parameter real msc = 1.0 from (0:10] `ATTR(info="Ideality factor of C-S diode current");
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parameter real tsf = 0.0 from [0:inf) `ATTR(info="Transit time for forward operation of substrate transistor" unit="s");
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parameter real itss = 0.0 from [0:1.0] `ATTR(desc="Substrate transistor transfer saturation current" unit="A");
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parameter real msf = 1.0 from (0:10] `ATTR(desc="Forward ideality factor of substrate transfer current");
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parameter real iscs = 0.0 from [0:1.0] `ATTR(desc="C-S diode saturation current" unit="A");
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parameter real msc = 1.0 from (0:10] `ATTR(desc="Ideality factor of C-S diode current");
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parameter real tsf = 0.0 from [0:inf) `ATTR(desc="Transit time for forward operation of substrate transistor" unit="s");
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//Intra-device substrate coupling
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parameter real rsu = 0.0 from [0:inf) `ATTR(info="Substrate series resistance" unit="Ohm");
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parameter real csu = 0.0 from [0:inf) `ATTR(info="Substrate shunt capacitance" unit="F");
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parameter real rsu = 0.0 from [0:inf) `ATTR(desc="Substrate series resistance" unit="Ohm");
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parameter real csu = 0.0 from [0:inf) `ATTR(desc="Substrate shunt capacitance" unit="F");
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//Depletion Capacitances
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parameter real cjei0 = 1.0E-20 from [0:inf) `ATTR(info="Internal B-E zero-bias depletion capacitance" unit="F");
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parameter real vdei = 0.9 from (0:10] `ATTR(info="Internal B-E built-in potential" unit="V");
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parameter real zei = 0.5 from (0:1] `ATTR(info="Internal B-E grading coefficient");
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parameter real ajei = 2.5 from [1:inf) `ATTR(info="Ratio of maximum to zero-bias value of internal B-E capacitance");
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parameter real cjep0 = 1.0E-20 from [0:inf) `ATTR(info="Peripheral B-E zero-bias depletion capacitance" unit="F");
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parameter real vdep = 0.9 from (0:10] `ATTR(info="Peripheral B-E built-in potential" unit="V");
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parameter real zep = 0.5 from (0:1] `ATTR(info="Peripheral B-E grading coefficient");
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parameter real ajep = 2.5 from [1:inf) `ATTR(info="Ratio of maximum to zero-bias value of peripheral B-E capacitance");
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parameter real cjci0 = 1.0E-20 from [0:inf) `ATTR(info="Internal B-C zero-bias depletion capacitance" unit="F");
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parameter real vdci = 0.7 from (0:10] `ATTR(info="Internal B-C built-in potential" unit="V");
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parameter real zci = 0.4 from (0:1] `ATTR(info="Internal B-C grading coefficient");
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parameter real vptci = 100 from (0:100] `ATTR(info="Internal B-C punch-through voltage" unit="V");
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parameter real cjcx0 = 1.0E-20 from [0:inf) `ATTR(info="External B-C zero-bias depletion capacitance" unit="F");
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parameter real vdcx = 0.7 from (0:10] `ATTR(info="External B-C built-in potential" unit="V");
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parameter real zcx = 0.4 from (0:1] `ATTR(info="External B-C grading coefficient");
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parameter real vptcx = 100 from (0:100] `ATTR(info="External B-C punch-through voltage" unit="V");
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parameter real fbcpar = 0.0 from [0:1] `ATTR(info="Partitioning factor of parasitic B-C cap");
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parameter real fbepar = 1.0 from [0:1] `ATTR(info="Partitioning factor of parasitic B-E cap");
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parameter real cjs0 = 0.0 from [0:inf) `ATTR(info="C-S zero-bias depletion capacitance" unit="F");
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parameter real vds = 0.6 from (0:10] `ATTR(info="C-S built-in potential" unit="V");
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parameter real zs = 0.5 from (0:1] `ATTR(info="C-S grading coefficient");
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parameter real vpts = 100 from (0:100] `ATTR(info="C-S punch-through voltage" unit="V");
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parameter real cjei0 = 1.0E-20 from [0:inf) `ATTR(desc="Internal B-E zero-bias depletion capacitance" unit="F");
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parameter real vdei = 0.9 from (0:10] `ATTR(desc="Internal B-E built-in potential" unit="V");
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parameter real zei = 0.5 from (0:1] `ATTR(desc="Internal B-E grading coefficient");
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parameter real ajei = 2.5 from [1:inf) `ATTR(desc="Ratio of maximum to zero-bias value of internal B-E capacitance");
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parameter real cjep0 = 1.0E-20 from [0:inf) `ATTR(desc="Peripheral B-E zero-bias depletion capacitance" unit="F");
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parameter real vdep = 0.9 from (0:10] `ATTR(desc="Peripheral B-E built-in potential" unit="V");
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parameter real zep = 0.5 from (0:1] `ATTR(desc="Peripheral B-E grading coefficient");
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parameter real ajep = 2.5 from [1:inf) `ATTR(desc="Ratio of maximum to zero-bias value of peripheral B-E capacitance");
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parameter real cjci0 = 1.0E-20 from [0:inf) `ATTR(desc="Internal B-C zero-bias depletion capacitance" unit="F");
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parameter real vdci = 0.7 from (0:10] `ATTR(desc="Internal B-C built-in potential" unit="V");
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parameter real zci = 0.4 from (0:1] `ATTR(desc="Internal B-C grading coefficient");
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parameter real vptci = 100 from (0:100] `ATTR(desc="Internal B-C punch-through voltage" unit="V");
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parameter real cjcx0 = 1.0E-20 from [0:inf) `ATTR(desc="External B-C zero-bias depletion capacitance" unit="F");
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parameter real vdcx = 0.7 from (0:10] `ATTR(desc="External B-C built-in potential" unit="V");
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parameter real zcx = 0.4 from (0:1] `ATTR(desc="External B-C grading coefficient");
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parameter real vptcx = 100 from (0:100] `ATTR(desc="External B-C punch-through voltage" unit="V");
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parameter real fbcpar = 0.0 from [0:1] `ATTR(desc="Partitioning factor of parasitic B-C cap");
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parameter real fbepar = 1.0 from [0:1] `ATTR(desc="Partitioning factor of parasitic B-E cap");
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parameter real cjs0 = 0.0 from [0:inf) `ATTR(desc="C-S zero-bias depletion capacitance" unit="F");
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parameter real vds = 0.6 from (0:10] `ATTR(desc="C-S built-in potential" unit="V");
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parameter real zs = 0.5 from (0:1] `ATTR(desc="C-S grading coefficient");
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parameter real vpts = 100 from (0:100] `ATTR(desc="C-S punch-through voltage" unit="V");
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//Diffusion Capacitances
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parameter real t0 = 0.0 from [0:inf) `ATTR(info="Low current forward transit time at VBC=0V" unit="s");
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parameter real dt0h = 0.0 from (-inf:inf) `ATTR(info="Time constant for base and B-C space charge layer width modulation" unit="s");
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parameter real tbvl = 0.0 from [0:inf) `ATTR(info="Time constant for modelling carrier jam at low VCE" unit="s");
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parameter real tef0 = 0.0 from [0:inf) `ATTR(info="Neutral emitter storage time" unit="s");
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parameter real gtfe = 1.0 from (0:10] `ATTR(info="Exponent factor for current dependence of neutral emitter storage time");
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parameter real thcs = 0.0 from [0:inf) `ATTR(info="Saturation time constant at high current densities" unit="s");
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parameter real ahc = 0.1 from (0:10] `ATTR(info="Smoothing factor for current dependence of base and collector transit time");
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parameter real fthc = 0.0 from [0:1] `ATTR(info="Partitioning factor for base and collector portion");
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parameter real rci0 = 150 from (0:inf) `ATTR(info="Internal collector resistance at low electric field" unit="Ohm");
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parameter real vlim = 0.5 from (0:10] `ATTR(info="Voltage separating ohmic and saturation velocity regime" unit="V");
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parameter real vces = 0.1 from [0:1] `ATTR(info="Internal C-E saturation voltage" unit="V");
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parameter real vpt = 100.0 from (0:inf] `ATTR(info="Collector punch-through voltage" unit="V"); // `0' signifies infinity
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parameter real tr = 0.0 from [0:inf) `ATTR(info="Storage time for inverse operation" unit="s");
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parameter real t0 = 0.0 from [0:inf) `ATTR(desc="Low current forward transit time at VBC=0V" unit="s");
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parameter real dt0h = 0.0 from (-inf:inf) `ATTR(desc="Time constant for base and B-C space charge layer width modulation" unit="s");
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parameter real tbvl = 0.0 from [0:inf) `ATTR(desc="Time constant for modelling carrier jam at low VCE" unit="s");
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parameter real tef0 = 0.0 from [0:inf) `ATTR(desc="Neutral emitter storage time" unit="s");
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parameter real gtfe = 1.0 from (0:10] `ATTR(desc="Exponent factor for current dependence of neutral emitter storage time");
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parameter real thcs = 0.0 from [0:inf) `ATTR(desc="Saturation time constant at high current densities" unit="s");
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parameter real ahc = 0.1 from (0:10] `ATTR(desc="Smoothing factor for current dependence of base and collector transit time");
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parameter real fthc = 0.0 from [0:1] `ATTR(desc="Partitioning factor for base and collector portion");
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parameter real rci0 = 150 from (0:inf) `ATTR(desc="Internal collector resistance at low electric field" unit="Ohm");
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parameter real vlim = 0.5 from (0:10] `ATTR(desc="Voltage separating ohmic and saturation velocity regime" unit="V");
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parameter real vces = 0.1 from [0:1] `ATTR(desc="Internal C-E saturation voltage" unit="V");
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parameter real vpt = 100.0 from (0:inf] `ATTR(desc="Collector punch-through voltage" unit="V"); // `0' signifies infinity
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parameter real tr = 0.0 from [0:inf) `ATTR(desc="Storage time for inverse operation" unit="s");
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//Isolation Capacitances
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parameter real cbepar = 0.0 from [0:inf) `ATTR(info="Total parasitic B-E capacitance" unit="F");
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parameter real cbcpar = 0.0 from [0:inf) `ATTR(info="Total parasitic B-C capacitance" unit="F");
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parameter real cbepar = 0.0 from [0:inf) `ATTR(desc="Total parasitic B-E capacitance" unit="F");
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parameter real cbcpar = 0.0 from [0:inf) `ATTR(desc="Total parasitic B-C capacitance" unit="F");
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//Non-quasi-static Effect
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parameter real alqf = 0.0 from [0:1] `ATTR(info="Factor for additional delay time of minority charge");
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parameter real alit = 0.0 from [0:1] `ATTR(info="Factor for additional delay time of transfer current");
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parameter integer flnqs = 0 from [0:1] `ATTR(info="Flag for turning on and off of vertical NQS effect");
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parameter real alqf = 0.0 from [0:1] `ATTR(desc="Factor for additional delay time of minority charge");
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parameter real alit = 0.0 from [0:1] `ATTR(desc="Factor for additional delay time of transfer current");
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parameter integer flnqs = 0 from [0:1] `ATTR(desc="Flag for turning on and off of vertical NQS effect");
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//Noise
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parameter real kf = 0.0 from [0:inf) `ATTR(info="Flicker noise coefficient");
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parameter real af = 2.0 from (0:10] `ATTR(info="Flicker noise exponent factor");
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parameter integer cfbe = -1 from [-2:-1] `ATTR(info="Flag for determining where to tag the flicker noise source");
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parameter real kf = 0.0 from [0:inf) `ATTR(desc="Flicker noise coefficient");
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parameter real af = 2.0 from (0:10] `ATTR(desc="Flicker noise exponent factor");
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parameter integer cfbe = -1 from [-2:-1] `ATTR(desc="Flag for determining where to tag the flicker noise source");
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//Lateral Geometry Scaling (at high current densities)
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parameter real latb = 0.0 from [0:inf) `ATTR(info="Scaling factor for collector minority charge in direction of emitter width");
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parameter real latl = 0.0 from [0:inf) `ATTR(info="Scaling factor for collector minority charge in direction of emitter length");
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parameter real latb = 0.0 from [0:inf) `ATTR(desc="Scaling factor for collector minority charge in direction of emitter width");
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parameter real latl = 0.0 from [0:inf) `ATTR(desc="Scaling factor for collector minority charge in direction of emitter length");
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//Temperature dependence
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parameter real vgb = 1.17 from (0:10] `ATTR(info="Bandgap voltage extrapolated to 0 K" unit="V");
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parameter real alt0 = 0.0 `ATTR(info="First order relative TC of parameter T0" unit="1/K");
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parameter real kt0 = 0.0 `ATTR(info="Second order relative TC of parameter T0");
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parameter real zetaci = 0.0 from [-10:10] `ATTR(info="Temperature exponent for RCI0");
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parameter real alvs = 0.0 `ATTR(info="Relative TC of saturation drift velocity" unit="1/K");
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parameter real alces = 0.0 `ATTR(info="Relative TC of VCES" unit="1/K");
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parameter real zetarbi = 0.0 from [-10:10] `ATTR(info="Temperature exponent of internal base resistance");
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parameter real zetarbx = 0.0 from [-10:10] `ATTR(info="Temperature exponent of external base resistance");
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parameter real zetarcx = 0.0 from [-10:10] `ATTR(info="Temperature exponent of external collector resistance");
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parameter real zetare = 0.0 from [-10:10] `ATTR(info="Temperature exponent of emitter resistance");
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parameter real zetacx = 1.0 from [-10:10] `ATTR(info="Temperature exponent of mobility in substrate transistor transit time");
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parameter real vge = 1.17 from (0:10] `ATTR(info="Effective emitter bandgap voltage" unit="V");
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parameter real vgc = 1.17 from (0:10] `ATTR(info="Effective collector bandgap voltage" unit="V");
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parameter real vgs = 1.17 from (0:10] `ATTR(info="Effective substrate bandgap voltage" unit="V");
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parameter real f1vg =-1.02377e-4 `ATTR(info="Coefficient K1 in T-dependent band-gap equation");
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parameter real f2vg = 4.3215e-4 `ATTR(info="Coefficient K2 in T-dependent band-gap equation");
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parameter real zetact = 3.0 from [-10:10] `ATTR(info="Exponent coefficient in transfer current temperature dependence");
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parameter real zetabet = 3.5 from [-10:10] `ATTR(info="Exponent coefficient in B-E junction current temperature dependence");
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parameter real alb = 0.0 `ATTR(info="Relative TC of forward current gain for V2.1 model" unit="1/K");
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parameter real vgb = 1.17 from (0:10] `ATTR(desc="Bandgap voltage extrapolated to 0 K" unit="V");
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parameter real alt0 = 0.0 `ATTR(desc="First order relative TC of parameter T0" unit="1/K");
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parameter real kt0 = 0.0 `ATTR(desc="Second order relative TC of parameter T0");
|
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parameter real zetaci = 0.0 from [-10:10] `ATTR(desc="Temperature exponent for RCI0");
|
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parameter real alvs = 0.0 `ATTR(desc="Relative TC of saturation drift velocity" unit="1/K");
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parameter real alces = 0.0 `ATTR(desc="Relative TC of VCES" unit="1/K");
|
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parameter real zetarbi = 0.0 from [-10:10] `ATTR(desc="Temperature exponent of internal base resistance");
|
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parameter real zetarbx = 0.0 from [-10:10] `ATTR(desc="Temperature exponent of external base resistance");
|
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parameter real zetarcx = 0.0 from [-10:10] `ATTR(desc="Temperature exponent of external collector resistance");
|
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parameter real zetare = 0.0 from [-10:10] `ATTR(desc="Temperature exponent of emitter resistance");
|
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parameter real zetacx = 1.0 from [-10:10] `ATTR(desc="Temperature exponent of mobility in substrate transistor transit time");
|
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parameter real vge = 1.17 from (0:10] `ATTR(desc="Effective emitter bandgap voltage" unit="V");
|
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parameter real vgc = 1.17 from (0:10] `ATTR(desc="Effective collector bandgap voltage" unit="V");
|
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parameter real vgs = 1.17 from (0:10] `ATTR(desc="Effective substrate bandgap voltage" unit="V");
|
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parameter real f1vg =-1.02377e-4 `ATTR(desc="Coefficient K1 in T-dependent band-gap equation");
|
||||
parameter real f2vg = 4.3215e-4 `ATTR(desc="Coefficient K2 in T-dependent band-gap equation");
|
||||
parameter real zetact = 3.0 from [-10:10] `ATTR(desc="Exponent coefficient in transfer current temperature dependence");
|
||||
parameter real zetabet = 3.5 from [-10:10] `ATTR(desc="Exponent coefficient in B-E junction current temperature dependence");
|
||||
parameter real alb = 0.0 `ATTR(desc="Relative TC of forward current gain for V2.1 model" unit="1/K");
|
||||
|
||||
//Self-Heating
|
||||
parameter integer flsh = 0 from [0:2] `ATTR(info="Flag for turning on and off self-heating effect");
|
||||
parameter real rth = 0.0 from [0:inf) `ATTR(info="Thermal resistance" unit="K/W");
|
||||
parameter real cth = 0.0 from [0:inf) `ATTR(info="Thermal capacitance" unit="J/W");
|
||||
parameter integer flsh = 0 from [0:2] `ATTR(desc="Flag for turning on and off self-heating effect");
|
||||
parameter real rth = 0.0 from [0:inf) `ATTR(desc="Thermal resistance" unit="K/W");
|
||||
parameter real cth = 0.0 from [0:inf) `ATTR(desc="Thermal capacitance" unit="J/W");
|
||||
|
||||
//Compatibility with V2.1
|
||||
parameter real flcomp = 0.0 from [0:inf) `ATTR(info="Flag for compatibility with v2.1 model (0=v2.1)");
|
||||
parameter real flcomp = 0.0 from [0:inf) `ATTR(desc="Flag for compatibility with v2.1 model (0=v2.1)");
|
||||
|
||||
//Circuit simulator specific parameters
|
||||
parameter real tnom = 27.0 `ATTR(info="Temperature at which parameters are specified" unit="C");
|
||||
parameter real dt = 0.0 `ATTR(info="Temperature change w.r.t. chip temperature for particular transistor" unit="K");
|
||||
parameter real tnom = 27.0 `ATTR(desc="Temperature at which parameters are specified" unit="C");
|
||||
parameter real dt = 0.0 `ATTR(desc="Temperature change w.r.t. chip temperature for particular transistor" unit="K");
|
||||
|
||||
|
||||
//
|
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|
|
|
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Loading…
Reference in New Issue