From cda268485739d41c9eb420f186313ad48325cb5e Mon Sep 17 00:00:00 2001 From: rlar Date: Tue, 11 Jul 2017 18:26:02 +0200 Subject: [PATCH] hicum2, use (*desc*) instead of (*info*) --- .../devices/adms/hicum2/admsva/hicum2.va | 226 +++++++++--------- 1 file changed, 113 insertions(+), 113 deletions(-) diff --git a/src/spicelib/devices/adms/hicum2/admsva/hicum2.va b/src/spicelib/devices/adms/hicum2/admsva/hicum2.va index 4fcad7ba6..dc97b5d3c 100644 --- a/src/spicelib/devices/adms/hicum2/admsva/hicum2.va +++ b/src/spicelib/devices/adms/hicum2/admsva/hicum2.va @@ -551,156 +551,156 @@ branch (n2 ) b_n2; //Transfer current -parameter real c10 = 2.0E-30 from [0:1] `ATTR(info="GICCR constant" unit="A^2s"); -parameter real qp0 = 2.0E-14 from (0:1] `ATTR(info="Zero-bias hole charge" unit="Coul"); -parameter real ich = 0.0 from [0:inf) `ATTR(info="High-current correction for 2D and 3D effects" unit="A"); //`0' signifies infinity -parameter real hfe = 1.0 from [0:inf] `ATTR(info="Emitter minority charge weighting factor in HBTs"); -parameter real hfc = 1.0 from [0:inf] `ATTR(info="Collector minority charge weighting factor in HBTs"); -parameter real hjei = 1.0 from [0:100] `ATTR(info="B-E depletion charge weighting factor in HBTs"); -parameter real hjci = 1.0 from [0:100] `ATTR(info="B-C depletion charge weighting factor in HBTs"); +parameter real c10 = 2.0E-30 from [0:1] `ATTR(desc="GICCR constant" unit="A^2s"); +parameter real qp0 = 2.0E-14 from (0:1] `ATTR(desc="Zero-bias hole charge" unit="Coul"); +parameter real ich = 0.0 from [0:inf) `ATTR(desc="High-current correction for 2D and 3D effects" unit="A"); //`0' signifies infinity +parameter real hfe = 1.0 from [0:inf] `ATTR(desc="Emitter minority charge weighting factor in HBTs"); +parameter real hfc = 1.0 from [0:inf] `ATTR(desc="Collector minority charge weighting factor in HBTs"); +parameter real hjei = 1.0 from [0:100] `ATTR(desc="B-E depletion charge weighting factor in HBTs"); +parameter real hjci = 1.0 from [0:100] `ATTR(desc="B-C depletion charge weighting factor in HBTs"); //Base-Emitter diode currents -parameter real ibeis = 1.0E-18 from [0:1] `ATTR(info="Internal B-E saturation current" unit="A"); -parameter real mbei = 1.0 from (0:10] `ATTR(info="Internal B-E current ideality factor"); -parameter real ireis = 0.0 from [0:1] `ATTR(info="Internal B-E recombination saturation current" unit="A"); -parameter real mrei = 2.0 from (0:10] `ATTR(info="Internal B-E recombination current ideality factor"); -parameter real ibeps = 0.0 from [0:1] `ATTR(info="Peripheral B-E saturation current" unit="A"); -parameter real mbep = 1.0 from (0:10] `ATTR(info="Peripheral B-E current ideality factor"); -parameter real ireps = 0.0 from [0:1] `ATTR(info="Peripheral B-E recombination saturation current" unit="A"); -parameter real mrep = 2.0 from (0:10] `ATTR(info="Peripheral B-E recombination current ideality factor"); -parameter real mcf = 1.0 from (0:10] `ATTR(info="Non-ideality factor for III-V HBTs"); +parameter real ibeis = 1.0E-18 from [0:1] `ATTR(desc="Internal B-E saturation current" unit="A"); +parameter real mbei = 1.0 from (0:10] `ATTR(desc="Internal B-E current ideality factor"); +parameter real ireis = 0.0 from [0:1] `ATTR(desc="Internal B-E recombination saturation current" unit="A"); +parameter real mrei = 2.0 from (0:10] `ATTR(desc="Internal B-E recombination current ideality factor"); +parameter real ibeps = 0.0 from [0:1] `ATTR(desc="Peripheral B-E saturation current" unit="A"); +parameter real mbep = 1.0 from (0:10] `ATTR(desc="Peripheral B-E current ideality factor"); +parameter real ireps = 0.0 from [0:1] `ATTR(desc="Peripheral B-E recombination saturation current" unit="A"); +parameter real mrep = 2.0 from (0:10] `ATTR(desc="Peripheral B-E recombination current ideality factor"); +parameter real mcf = 1.0 from (0:10] `ATTR(desc="Non-ideality factor for III-V HBTs"); //Transit time for excess recombination current at b-c barrier -parameter real tbhrec = 0.0 from [0:inf) `ATTR(info="Base current recombination time constant at B-C barrier for high forward injection" unit="s"); +parameter real tbhrec = 0.0 from [0:inf) `ATTR(desc="Base current recombination time constant at B-C barrier for high forward injection" unit="s"); //Base-Collector diode currents -parameter real ibcis = 1.0E-16 from [0:1.0] `ATTR(info="Internal B-C saturation current" unit="A"); -parameter real mbci = 1.0 from (0:10] `ATTR(info="Internal B-C current ideality factor"); -parameter real ibcxs = 0.0 from [0:1.0] `ATTR(info="External B-C saturation current" unit="A"); -parameter real mbcx = 1.0 from (0:10] `ATTR(info="External B-C current ideality factor"); +parameter real ibcis = 1.0E-16 from [0:1.0] `ATTR(desc="Internal B-C saturation current" unit="A"); +parameter real mbci = 1.0 from (0:10] `ATTR(desc="Internal B-C current ideality factor"); +parameter real ibcxs = 0.0 from [0:1.0] `ATTR(desc="External B-C saturation current" unit="A"); +parameter real mbcx = 1.0 from (0:10] `ATTR(desc="External B-C current ideality factor"); //Base-Emitter tunneling current -parameter real ibets = 0.0 from [0:1] `ATTR(info="B-E tunneling saturation current" unit="A"); -parameter real abet = 40 from [0:inf) `ATTR(info="Exponent factor for tunneling current"); -parameter integer tunode= 1 from [0:1] `ATTR(info="Specifies the base node connection for the tunneling current"); // =1 signifies perimeter node +parameter real ibets = 0.0 from [0:1] `ATTR(desc="B-E tunneling saturation current" unit="A"); +parameter real abet = 40 from [0:inf) `ATTR(desc="Exponent factor for tunneling current"); +parameter integer tunode= 1 from [0:1] `ATTR(desc="Specifies the base node connection for the tunneling current"); // =1 signifies perimeter node //Base-Collector avalanche current -parameter real favl = 0.0 from [0:inf) `ATTR(info="Avalanche current factor" unit="1/V"); -parameter real qavl = 0.0 from [0:inf) `ATTR(info="Exponent factor for avalanche current" unit="Coul"); -parameter real alfav = 0.0 `ATTR(info="Relative TC for FAVL" unit="1/K"); -parameter real alqav = 0.0 `ATTR(info="Relative TC for QAVL" unit="1/K"); +parameter real favl = 0.0 from [0:inf) `ATTR(desc="Avalanche current factor" unit="1/V"); +parameter real qavl = 0.0 from [0:inf) `ATTR(desc="Exponent factor for avalanche current" unit="Coul"); +parameter real alfav = 0.0 `ATTR(desc="Relative TC for FAVL" unit="1/K"); +parameter real alqav = 0.0 `ATTR(desc="Relative TC for QAVL" unit="1/K"); //Series resistances -parameter real rbi0 = 0.0 from [0:inf) `ATTR(info="Zero bias internal base resistance" unit="Ohm"); -parameter real rbx = 0.0 from [0:inf) `ATTR(info="External base series resistance" unit="Ohm"); -parameter real fgeo = 0.6557 from [0:inf] `ATTR(info="Factor for geometry dependence of emitter current crowding"); -parameter real fdqr0 = 0.0 from [-0.5:100] `ATTR(info="Correction factor for modulation by B-E and B-C space charge layer"); -parameter real fcrbi = 0.0 from [0:1] `ATTR(info="Ratio of HF shunt to total internal capacitance (lateral NQS effect)"); -parameter real fqi = 1.0 from [0:1] `ATTR(info="Ration of internal to total minority charge"); -parameter real re = 0.0 from [0:inf) `ATTR(info="Emitter series resistance" unit="Ohm"); -parameter real rcx = 0.0 from [0:inf) `ATTR(info="External collector series resistance" unit="Ohm"); +parameter real rbi0 = 0.0 from [0:inf) `ATTR(desc="Zero bias internal base resistance" unit="Ohm"); +parameter real rbx = 0.0 from [0:inf) `ATTR(desc="External base series resistance" unit="Ohm"); +parameter real fgeo = 0.6557 from [0:inf] `ATTR(desc="Factor for geometry dependence of emitter current crowding"); +parameter real fdqr0 = 0.0 from [-0.5:100] `ATTR(desc="Correction factor for modulation by B-E and B-C space charge layer"); +parameter real fcrbi = 0.0 from [0:1] `ATTR(desc="Ratio of HF shunt to total internal capacitance (lateral NQS effect)"); +parameter real fqi = 1.0 from [0:1] `ATTR(desc="Ration of internal to total minority charge"); +parameter real re = 0.0 from [0:inf) `ATTR(desc="Emitter series resistance" unit="Ohm"); +parameter real rcx = 0.0 from [0:inf) `ATTR(desc="External collector series resistance" unit="Ohm"); //Substrate transistor -parameter real itss = 0.0 from [0:1.0] `ATTR(info="Substrate transistor transfer saturation current" unit="A"); -parameter real msf = 1.0 from (0:10] `ATTR(info="Forward ideality factor of substrate transfer current"); -parameter real iscs = 0.0 from [0:1.0] `ATTR(info="C-S diode saturation current" unit="A"); -parameter real msc = 1.0 from (0:10] `ATTR(info="Ideality factor of C-S diode current"); -parameter real tsf = 0.0 from [0:inf) `ATTR(info="Transit time for forward operation of substrate transistor" unit="s"); +parameter real itss = 0.0 from [0:1.0] `ATTR(desc="Substrate transistor transfer saturation current" unit="A"); +parameter real msf = 1.0 from (0:10] `ATTR(desc="Forward ideality factor of substrate transfer current"); +parameter real iscs = 0.0 from [0:1.0] `ATTR(desc="C-S diode saturation current" unit="A"); +parameter real msc = 1.0 from (0:10] `ATTR(desc="Ideality factor of C-S diode current"); +parameter real tsf = 0.0 from [0:inf) `ATTR(desc="Transit time for forward operation of substrate transistor" unit="s"); //Intra-device substrate coupling -parameter real rsu = 0.0 from [0:inf) `ATTR(info="Substrate series resistance" unit="Ohm"); -parameter real csu = 0.0 from [0:inf) `ATTR(info="Substrate shunt capacitance" unit="F"); +parameter real rsu = 0.0 from [0:inf) `ATTR(desc="Substrate series resistance" unit="Ohm"); +parameter real csu = 0.0 from [0:inf) `ATTR(desc="Substrate shunt capacitance" unit="F"); //Depletion Capacitances -parameter real cjei0 = 1.0E-20 from [0:inf) `ATTR(info="Internal B-E zero-bias depletion capacitance" unit="F"); -parameter real vdei = 0.9 from (0:10] `ATTR(info="Internal B-E built-in potential" unit="V"); -parameter real zei = 0.5 from (0:1] `ATTR(info="Internal B-E grading coefficient"); -parameter real ajei = 2.5 from [1:inf) `ATTR(info="Ratio of maximum to zero-bias value of internal B-E capacitance"); -parameter real cjep0 = 1.0E-20 from [0:inf) `ATTR(info="Peripheral B-E zero-bias depletion capacitance" unit="F"); -parameter real vdep = 0.9 from (0:10] `ATTR(info="Peripheral B-E built-in potential" unit="V"); -parameter real zep = 0.5 from (0:1] `ATTR(info="Peripheral B-E grading coefficient"); -parameter real ajep = 2.5 from [1:inf) `ATTR(info="Ratio of maximum to zero-bias value of peripheral B-E capacitance"); -parameter real cjci0 = 1.0E-20 from [0:inf) `ATTR(info="Internal B-C zero-bias depletion capacitance" unit="F"); -parameter real vdci = 0.7 from (0:10] `ATTR(info="Internal B-C built-in potential" unit="V"); -parameter real zci = 0.4 from (0:1] `ATTR(info="Internal B-C grading coefficient"); -parameter real vptci = 100 from (0:100] `ATTR(info="Internal B-C punch-through voltage" unit="V"); -parameter real cjcx0 = 1.0E-20 from [0:inf) `ATTR(info="External B-C zero-bias depletion capacitance" unit="F"); -parameter real vdcx = 0.7 from (0:10] `ATTR(info="External B-C built-in potential" unit="V"); -parameter real zcx = 0.4 from (0:1] `ATTR(info="External B-C grading coefficient"); -parameter real vptcx = 100 from (0:100] `ATTR(info="External B-C punch-through voltage" unit="V"); -parameter real fbcpar = 0.0 from [0:1] `ATTR(info="Partitioning factor of parasitic B-C cap"); -parameter real fbepar = 1.0 from [0:1] `ATTR(info="Partitioning factor of parasitic B-E cap"); -parameter real cjs0 = 0.0 from [0:inf) `ATTR(info="C-S zero-bias depletion capacitance" unit="F"); -parameter real vds = 0.6 from (0:10] `ATTR(info="C-S built-in potential" unit="V"); -parameter real zs = 0.5 from (0:1] `ATTR(info="C-S grading coefficient"); -parameter real vpts = 100 from (0:100] `ATTR(info="C-S punch-through voltage" unit="V"); +parameter real cjei0 = 1.0E-20 from [0:inf) `ATTR(desc="Internal B-E zero-bias depletion capacitance" unit="F"); +parameter real vdei = 0.9 from (0:10] `ATTR(desc="Internal B-E built-in potential" unit="V"); +parameter real zei = 0.5 from (0:1] `ATTR(desc="Internal B-E grading coefficient"); +parameter real ajei = 2.5 from [1:inf) `ATTR(desc="Ratio of maximum to zero-bias value of internal B-E capacitance"); +parameter real cjep0 = 1.0E-20 from [0:inf) `ATTR(desc="Peripheral B-E zero-bias depletion capacitance" unit="F"); +parameter real vdep = 0.9 from (0:10] `ATTR(desc="Peripheral B-E built-in potential" unit="V"); +parameter real zep = 0.5 from (0:1] `ATTR(desc="Peripheral B-E grading coefficient"); +parameter real ajep = 2.5 from [1:inf) `ATTR(desc="Ratio of maximum to zero-bias value of peripheral B-E capacitance"); +parameter real cjci0 = 1.0E-20 from [0:inf) `ATTR(desc="Internal B-C zero-bias depletion capacitance" unit="F"); +parameter real vdci = 0.7 from (0:10] `ATTR(desc="Internal B-C built-in potential" unit="V"); +parameter real zci = 0.4 from (0:1] `ATTR(desc="Internal B-C grading coefficient"); +parameter real vptci = 100 from (0:100] `ATTR(desc="Internal B-C punch-through voltage" unit="V"); +parameter real cjcx0 = 1.0E-20 from [0:inf) `ATTR(desc="External B-C zero-bias depletion capacitance" unit="F"); +parameter real vdcx = 0.7 from (0:10] `ATTR(desc="External B-C built-in potential" unit="V"); +parameter real zcx = 0.4 from (0:1] `ATTR(desc="External B-C grading coefficient"); +parameter real vptcx = 100 from (0:100] `ATTR(desc="External B-C punch-through voltage" unit="V"); +parameter real fbcpar = 0.0 from [0:1] `ATTR(desc="Partitioning factor of parasitic B-C cap"); +parameter real fbepar = 1.0 from [0:1] `ATTR(desc="Partitioning factor of parasitic B-E cap"); +parameter real cjs0 = 0.0 from [0:inf) `ATTR(desc="C-S zero-bias depletion capacitance" unit="F"); +parameter real vds = 0.6 from (0:10] `ATTR(desc="C-S built-in potential" unit="V"); +parameter real zs = 0.5 from (0:1] `ATTR(desc="C-S grading coefficient"); +parameter real vpts = 100 from (0:100] `ATTR(desc="C-S punch-through voltage" unit="V"); //Diffusion Capacitances -parameter real t0 = 0.0 from [0:inf) `ATTR(info="Low current forward transit time at VBC=0V" unit="s"); -parameter real dt0h = 0.0 from (-inf:inf) `ATTR(info="Time constant for base and B-C space charge layer width modulation" unit="s"); -parameter real tbvl = 0.0 from [0:inf) `ATTR(info="Time constant for modelling carrier jam at low VCE" unit="s"); -parameter real tef0 = 0.0 from [0:inf) `ATTR(info="Neutral emitter storage time" unit="s"); -parameter real gtfe = 1.0 from (0:10] `ATTR(info="Exponent factor for current dependence of neutral emitter storage time"); -parameter real thcs = 0.0 from [0:inf) `ATTR(info="Saturation time constant at high current densities" unit="s"); -parameter real ahc = 0.1 from (0:10] `ATTR(info="Smoothing factor for current dependence of base and collector transit time"); -parameter real fthc = 0.0 from [0:1] `ATTR(info="Partitioning factor for base and collector portion"); -parameter real rci0 = 150 from (0:inf) `ATTR(info="Internal collector resistance at low electric field" unit="Ohm"); -parameter real vlim = 0.5 from (0:10] `ATTR(info="Voltage separating ohmic and saturation velocity regime" unit="V"); -parameter real vces = 0.1 from [0:1] `ATTR(info="Internal C-E saturation voltage" unit="V"); -parameter real vpt = 100.0 from (0:inf] `ATTR(info="Collector punch-through voltage" unit="V"); // `0' signifies infinity -parameter real tr = 0.0 from [0:inf) `ATTR(info="Storage time for inverse operation" unit="s"); +parameter real t0 = 0.0 from [0:inf) `ATTR(desc="Low current forward transit time at VBC=0V" unit="s"); +parameter real dt0h = 0.0 from (-inf:inf) `ATTR(desc="Time constant for base and B-C space charge layer width modulation" unit="s"); +parameter real tbvl = 0.0 from [0:inf) `ATTR(desc="Time constant for modelling carrier jam at low VCE" unit="s"); +parameter real tef0 = 0.0 from [0:inf) `ATTR(desc="Neutral emitter storage time" unit="s"); +parameter real gtfe = 1.0 from (0:10] `ATTR(desc="Exponent factor for current dependence of neutral emitter storage time"); +parameter real thcs = 0.0 from [0:inf) `ATTR(desc="Saturation time constant at high current densities" unit="s"); +parameter real ahc = 0.1 from (0:10] `ATTR(desc="Smoothing factor for current dependence of base and collector transit time"); +parameter real fthc = 0.0 from [0:1] `ATTR(desc="Partitioning factor for base and collector portion"); +parameter real rci0 = 150 from (0:inf) `ATTR(desc="Internal collector resistance at low electric field" unit="Ohm"); +parameter real vlim = 0.5 from (0:10] `ATTR(desc="Voltage separating ohmic and saturation velocity regime" unit="V"); +parameter real vces = 0.1 from [0:1] `ATTR(desc="Internal C-E saturation voltage" unit="V"); +parameter real vpt = 100.0 from (0:inf] `ATTR(desc="Collector punch-through voltage" unit="V"); // `0' signifies infinity +parameter real tr = 0.0 from [0:inf) `ATTR(desc="Storage time for inverse operation" unit="s"); //Isolation Capacitances -parameter real cbepar = 0.0 from [0:inf) `ATTR(info="Total parasitic B-E capacitance" unit="F"); -parameter real cbcpar = 0.0 from [0:inf) `ATTR(info="Total parasitic B-C capacitance" unit="F"); +parameter real cbepar = 0.0 from [0:inf) `ATTR(desc="Total parasitic B-E capacitance" unit="F"); +parameter real cbcpar = 0.0 from [0:inf) `ATTR(desc="Total parasitic B-C capacitance" unit="F"); //Non-quasi-static Effect -parameter real alqf = 0.0 from [0:1] `ATTR(info="Factor for additional delay time of minority charge"); -parameter real alit = 0.0 from [0:1] `ATTR(info="Factor for additional delay time of transfer current"); -parameter integer flnqs = 0 from [0:1] `ATTR(info="Flag for turning on and off of vertical NQS effect"); +parameter real alqf = 0.0 from [0:1] `ATTR(desc="Factor for additional delay time of minority charge"); +parameter real alit = 0.0 from [0:1] `ATTR(desc="Factor for additional delay time of transfer current"); +parameter integer flnqs = 0 from [0:1] `ATTR(desc="Flag for turning on and off of vertical NQS effect"); //Noise -parameter real kf = 0.0 from [0:inf) `ATTR(info="Flicker noise coefficient"); -parameter real af = 2.0 from (0:10] `ATTR(info="Flicker noise exponent factor"); -parameter integer cfbe = -1 from [-2:-1] `ATTR(info="Flag for determining where to tag the flicker noise source"); +parameter real kf = 0.0 from [0:inf) `ATTR(desc="Flicker noise coefficient"); +parameter real af = 2.0 from (0:10] `ATTR(desc="Flicker noise exponent factor"); +parameter integer cfbe = -1 from [-2:-1] `ATTR(desc="Flag for determining where to tag the flicker noise source"); //Lateral Geometry Scaling (at high current densities) -parameter real latb = 0.0 from [0:inf) `ATTR(info="Scaling factor for collector minority charge in direction of emitter width"); -parameter real latl = 0.0 from [0:inf) `ATTR(info="Scaling factor for collector minority charge in direction of emitter length"); +parameter real latb = 0.0 from [0:inf) `ATTR(desc="Scaling factor for collector minority charge in direction of emitter width"); +parameter real latl = 0.0 from [0:inf) `ATTR(desc="Scaling factor for collector minority charge in direction of emitter length"); //Temperature dependence -parameter real vgb = 1.17 from (0:10] `ATTR(info="Bandgap voltage extrapolated to 0 K" unit="V"); -parameter real alt0 = 0.0 `ATTR(info="First order relative TC of parameter T0" unit="1/K"); -parameter real kt0 = 0.0 `ATTR(info="Second order relative TC of parameter T0"); -parameter real zetaci = 0.0 from [-10:10] `ATTR(info="Temperature exponent for RCI0"); -parameter real alvs = 0.0 `ATTR(info="Relative TC of saturation drift velocity" unit="1/K"); -parameter real alces = 0.0 `ATTR(info="Relative TC of VCES" unit="1/K"); -parameter real zetarbi = 0.0 from [-10:10] `ATTR(info="Temperature exponent of internal base resistance"); -parameter real zetarbx = 0.0 from [-10:10] `ATTR(info="Temperature exponent of external base resistance"); -parameter real zetarcx = 0.0 from [-10:10] `ATTR(info="Temperature exponent of external collector resistance"); -parameter real zetare = 0.0 from [-10:10] `ATTR(info="Temperature exponent of emitter resistance"); -parameter real zetacx = 1.0 from [-10:10] `ATTR(info="Temperature exponent of mobility in substrate transistor transit time"); -parameter real vge = 1.17 from (0:10] `ATTR(info="Effective emitter bandgap voltage" unit="V"); -parameter real vgc = 1.17 from (0:10] `ATTR(info="Effective collector bandgap voltage" unit="V"); -parameter real vgs = 1.17 from (0:10] `ATTR(info="Effective substrate bandgap voltage" unit="V"); -parameter real f1vg =-1.02377e-4 `ATTR(info="Coefficient K1 in T-dependent band-gap equation"); -parameter real f2vg = 4.3215e-4 `ATTR(info="Coefficient K2 in T-dependent band-gap equation"); -parameter real zetact = 3.0 from [-10:10] `ATTR(info="Exponent coefficient in transfer current temperature dependence"); -parameter real zetabet = 3.5 from [-10:10] `ATTR(info="Exponent coefficient in B-E junction current temperature dependence"); -parameter real alb = 0.0 `ATTR(info="Relative TC of forward current gain for V2.1 model" unit="1/K"); +parameter real vgb = 1.17 from (0:10] `ATTR(desc="Bandgap voltage extrapolated to 0 K" unit="V"); +parameter real alt0 = 0.0 `ATTR(desc="First order relative TC of parameter T0" unit="1/K"); +parameter real kt0 = 0.0 `ATTR(desc="Second order relative TC of parameter T0"); +parameter real zetaci = 0.0 from [-10:10] `ATTR(desc="Temperature exponent for RCI0"); +parameter real alvs = 0.0 `ATTR(desc="Relative TC of saturation drift velocity" unit="1/K"); +parameter real alces = 0.0 `ATTR(desc="Relative TC of VCES" unit="1/K"); +parameter real zetarbi = 0.0 from [-10:10] `ATTR(desc="Temperature exponent of internal base resistance"); +parameter real zetarbx = 0.0 from [-10:10] `ATTR(desc="Temperature exponent of external base resistance"); +parameter real zetarcx = 0.0 from [-10:10] `ATTR(desc="Temperature exponent of external collector resistance"); +parameter real zetare = 0.0 from [-10:10] `ATTR(desc="Temperature exponent of emitter resistance"); +parameter real zetacx = 1.0 from [-10:10] `ATTR(desc="Temperature exponent of mobility in substrate transistor transit time"); +parameter real vge = 1.17 from (0:10] `ATTR(desc="Effective emitter bandgap voltage" unit="V"); +parameter real vgc = 1.17 from (0:10] `ATTR(desc="Effective collector bandgap voltage" unit="V"); +parameter real vgs = 1.17 from (0:10] `ATTR(desc="Effective substrate bandgap voltage" unit="V"); +parameter real f1vg =-1.02377e-4 `ATTR(desc="Coefficient K1 in T-dependent band-gap equation"); +parameter real f2vg = 4.3215e-4 `ATTR(desc="Coefficient K2 in T-dependent band-gap equation"); +parameter real zetact = 3.0 from [-10:10] `ATTR(desc="Exponent coefficient in transfer current temperature dependence"); +parameter real zetabet = 3.5 from [-10:10] `ATTR(desc="Exponent coefficient in B-E junction current temperature dependence"); +parameter real alb = 0.0 `ATTR(desc="Relative TC of forward current gain for V2.1 model" unit="1/K"); //Self-Heating -parameter integer flsh = 0 from [0:2] `ATTR(info="Flag for turning on and off self-heating effect"); -parameter real rth = 0.0 from [0:inf) `ATTR(info="Thermal resistance" unit="K/W"); -parameter real cth = 0.0 from [0:inf) `ATTR(info="Thermal capacitance" unit="J/W"); +parameter integer flsh = 0 from [0:2] `ATTR(desc="Flag for turning on and off self-heating effect"); +parameter real rth = 0.0 from [0:inf) `ATTR(desc="Thermal resistance" unit="K/W"); +parameter real cth = 0.0 from [0:inf) `ATTR(desc="Thermal capacitance" unit="J/W"); //Compatibility with V2.1 -parameter real flcomp = 0.0 from [0:inf) `ATTR(info="Flag for compatibility with v2.1 model (0=v2.1)"); +parameter real flcomp = 0.0 from [0:inf) `ATTR(desc="Flag for compatibility with v2.1 model (0=v2.1)"); //Circuit simulator specific parameters -parameter real tnom = 27.0 `ATTR(info="Temperature at which parameters are specified" unit="C"); -parameter real dt = 0.0 `ATTR(info="Temperature change w.r.t. chip temperature for particular transistor" unit="K"); +parameter real tnom = 27.0 `ATTR(desc="Temperature at which parameters are specified" unit="C"); +parameter real dt = 0.0 `ATTR(desc="Temperature change w.r.t. chip temperature for particular transistor" unit="K"); //