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This fixed #822 diode discontinuity problem 

Base recombination current appears in reverse and breakdown region too.
This commit is contained in:
dwarning 2025-12-02 20:35:43 +01:00
parent 284d4308db
commit c1acc44a55
1 changed files with 23 additions and 7 deletions
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30
src/spicelib/devices/dio/dioload.c
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@ -54,7 +54,7 @@ DIOload(GENmodel *inModel, CKTcircuit *ckt)
double vd, vdsw=0.0; /* current diode voltage */
double vdtemp;
double vt; /* K t / Q */
double vte, vtesw, vtetun, vtebrk;
double vte, vtesw, vtetun, vtebrk, vterec;
int Check_dio=0, Check_dio_sw=0, Check_th;
int error;
int SenCond=0; /* sensitivity condition */
@ -102,6 +102,7 @@ DIOload(GENmodel *inModel, CKTcircuit *ckt)
vte = model->DIOemissionCoeff * vt;
vtesw = model->DIOswEmissionCoeff * vt;
vtebrk = model->DIObrkdEmissionCoeff * vt;
vterec = model->DIOrecEmissionCoeff*vt;
gspr = here->DIOtConductance;
gsprsw = here->DIOtConductanceSW;
/*
@ -358,8 +359,7 @@ next1:
cdsw_dT = csatsw_dT * (evd - 1) - csatsw * vd * evd / (vte * Temp);
}
if (model->DIOrecSatCurGiven) { /* recombination current */
double vterec = model->DIOrecEmissionCoeff*vt;
evd_rec = exp(vd/(vterec));
evd_rec = exp(vd/vterec);
cdb_rec = here->DIOtRecSatCur*(evd_rec-1);
gdb_rec = here->DIOtRecSatCur*evd_rec/vterec;
cdb_rec_dT = here->DIOtRecSatCur_dT * (evd_rec - 1)
@ -383,7 +383,15 @@ next1:
arg = 3*vte/(vd*CONSTe);
arg = arg * arg * arg;
darg_dT = 3 * arg / Temp;
cdb = -csat*(1+arg);
if (model->DIOrecSatCurGiven) {
evd_rec = exp((-3*vte)/vterec);
cdb_rec = here->DIOtRecSatCur*(evd_rec-1);
t1 = pow((1-(-3*vte)/here->DIOtJctPot), 2) + 0.005;
gen_fac = pow(t1, here->DIOtGradingCoeff/2);
cdb = -csat*(1+arg) + gen_fac*cdb_rec;
} else {
cdb = -csat*(1+arg);
}
gdb = csat*3*arg/vd;
cdb_dT = -csat_dT - (csat_dT*arg + csat*darg_dT);
if ((model->DIOsatSWCurGiven)&&(!model->DIOswEmissionCoeffGiven)) {
@ -398,12 +406,20 @@ next1:
evrev = exp(-(here->DIOtBrkdwnV+vd)/vtebrk);
evrev_dT = (here->DIOtBrkdwnV+vd)*evrev/(vtebrk*Temp);
cdb = -csat*evrev;
if (model->DIOrecSatCurGiven) {
evd_rec = exp((-3*vte)/vterec);
cdb_rec = here->DIOtRecSatCur*(evd_rec-1);
t1 = pow((1-(-3*vte)/here->DIOtJctPot), 2) + 0.005;
gen_fac = pow(t1, here->DIOtGradingCoeff/2);
cdb = -csat*evrev + gen_fac*cdb_rec;
} else {
cdb = -csat*evrev;
}
gdb = csat*evrev/vtebrk;
cdb_dT = -(csat_dT*evrev + csat*evrev_dT);
if ((model->DIOsatSWCurGiven)
&&(!model->DIOresistSWGiven) /* no breakdown for separate sidewall diode */
&&(!model->DIOswEmissionCoeffGiven)) {
&&(!model->DIOswEmissionCoeffGiven)
&&(!model->DIOresistSWGiven)) { /* no breakdown for separate sidewall diode */
evrev = exp(-(here->DIOtBrkdwnV+vdsw)/vtebrk);
evrev_dT = (here->DIOtBrkdwnV+vdsw)*evrev/(vtebrk*Temp);
cdsw = -csatsw*evrev;