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Substitute ancient subthreshold model parameter with ksubthres.

This commit is contained in:
dwarning 2018-11-20 23:57:53 +01:00 committed by Holger Vogt
parent 72110dc65d
commit 9937b5bed8
5 changed files with 5 additions and 5 deletions
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2
examples/vdmos/IXTP6N100D2-cap.cir
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@ -2,7 +2,7 @@ Test of VDMOS gate-source and gate-drain capacitance
m1 d g s s IXTP6N100D2
.MODEL IXTP6N100D2 VDMOS(KP=2.9 RS=0.1 RD=1.3 RG=1 VTO=-2.7 LAMBDA=0.03 CGDMAX=3000p CGDMIN=2p CGS=2915p a=1 TT=1371n IS=2.13E-08 N=1.564 RB=0.0038 m=0.548 Vj=0.1 Cjo=3200pF subthres=2.5m)
.MODEL IXTP6N100D2 VDMOS(KP=2.9 RS=0.1 RD=1.3 RG=1 VTO=-2.7 LAMBDA=0.03 CGDMAX=3000p CGDMIN=2p CGS=2915p a=1 TT=1371n IS=2.13E-08 N=1.564 RB=0.0038 m=0.548 Vj=0.1 Cjo=3200pF ksubthres=.1)
vd d 0 dc 5
vg g 0 pwl (0 -3 1 3)

2
examples/vdmos/IXTP6N100D2-n-weak-inv.cir
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@ -6,7 +6,7 @@ m2 d g s2 s2 IXTP6N100D2_2
*.model dmod d is=10n rs=0.05
* LTSPICE model parameters
*.MODEL IXTP6N100D2 VDMOS(KP=2.9 RS=0.1 RD=1.3 RG=1 VTO=-2.7 LAMBDA=0.03 CGDMAX=3000p CGDMIN=2p CGS=2915p TT=1371n a=1 IS=2.13E-08 N=1.564 RB=0.0038 m=0.548 *Vj=0.1 Cjo=3200pF subthres=2.5m)
*.MODEL IXTP6N100D2 VDMOS(KP=2.9 RS=0.1 RD=1.3 RG=1 VTO=-2.7 LAMBDA=0.03 CGDMAX=3000p CGDMIN=2p CGS=2915p TT=1371n a=1 IS=2.13E-08 N=1.564 RB=0.0038 m=0.548 *Vj=0.1 Cjo=3200pF ksubthres=0.1)
* equivalent ngspice model parameters
.MODEL IXTP6N100D2_2 VDMOS(KP=2.9 RS=0.1 RD=1.3 RG=1 VTO=-2.7 LAMBDA=0.03 CGDMAX=3000p CGDMIN=2p CGS=2915p TT=1371n a=1 IS=2.13E-08 N=1.564 RB=0.0038 m=0.548 Vj=0.1 Cjo=3200pF ksubthres=39m)

2
examples/vdmos/VDMOS-DIO-AC.cir
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@ -7,7 +7,7 @@ Va ad 0 DC 0.5 AC 1 $ DC -20
Vk kd 0 0
m1 d g s s IXTP6N100D2
.MODEL IXTP6N100D2 VDMOS(KP=2.9 RS=0.1 RD=1.3 RG=1 VTO=-2.7 LAMBDA=0.03 CGDMAX=3000p CGDMIN=2p CGS=2915p a=1 TT=1371n IS=2.13E-08 N=1.564 RB=0.0038 m=0.548 Vj=0.1 Cjo=3200pF subthres=2.5m subslope=43m subshift=-25m)
.MODEL IXTP6N100D2 VDMOS(KP=2.9 RS=0.1 RD=1.3 RG=1 VTO=-2.7 LAMBDA=0.03 CGDMAX=3000p CGDMIN=2p CGS=2915p a=1 TT=1371n IS=2.13E-08 N=1.564 RB=0.0038 m=0.548 Vj=0.1 Cjo=3200pF ksubthres=.1 subslope=43m subshift=-25m)
Vd d 0 DC -0.5 AC 1 $ DC 20
Vg g 0 -5 $ transistor is off

2
examples/vdmos/VDMOS-DIO.cir
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@ -7,7 +7,7 @@ Va ad 0 dc 0 pwl(0 -2 2.5 0.5)
Vk kd 0 0
m1 d g s s IXTP6N100D2
.MODEL IXTP6N100D2 VDMOS(KP=2.9 RS=0.1 RD=1.3 RG=1 VTO=-2.7 LAMBDA=0.03 CGDMAX=3000p CGDMIN=2p CGS=2915p a=1 TT=1371n IS=2.13E-08 N=1.564 RB=0.0038 m=0.548 Vj=0.1 Cjo=3200pF subthres=2.5m)
.MODEL IXTP6N100D2 VDMOS(KP=2.9 RS=0.1 RD=1.3 RG=1 VTO=-2.7 LAMBDA=0.03 CGDMAX=3000p CGDMIN=2p CGS=2915p a=1 TT=1371n IS=2.13E-08 N=1.564 RB=0.0038 m=0.548 Vj=0.1 Cjo=3200pF ksubthres=.1)
Vd d 0 dc 0 pwl(0 2 2.5 -0.5)
Vg g 0 -5 $ transistor is off

2
examples/vdmos/vdmosp-out-mtr.cir
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@ -10,7 +10,7 @@ m2 d g s2 s2 IRF7233_2
.model IRF7233_2 VDMOS(pchan mtriode=2 Rg=3 Rd=8m Rs=6m Vto=-1 Kp=70 Cgdmax=2n Cgdmin=.25n Cgs=3.3n Cjo=.98n Is=98p Rb=10m mfg=International_Rectifier Vds=-12 Ron=20m Qg=49n)
m3 d g s3 s3 IRF7233_3
.model IRF7233_3 VDMOS(pchan mtriode=2 Rg=3 Rd=8m Rs=6m Vto=-1 Kp=70 Cgdmax=2n Cgdmin=.25n Cgs=3.3n Cjo=.98n Is=98p Rb=10m mfg=International_Rectifier Vds=-12 Ron=20m Qg=49n subthres=0.5)
.model IRF7233_3 VDMOS(pchan mtriode=2 Rg=3 Rd=8m Rs=6m Vto=-1 Kp=70 Cgdmax=2n Cgdmin=.25n Cgs=3.3n Cjo=.98n Is=98p Rb=10m mfg=International_Rectifier Vds=-12 Ron=20m Qg=49n ksubthres=.1)
vd d 0 -5
vg g 0 -5