diff --git a/examples/vdmos/IXTP6N100D2-cap.cir b/examples/vdmos/IXTP6N100D2-cap.cir
index d2f748f39..8c5b85c77 100644
--- a/examples/vdmos/IXTP6N100D2-cap.cir
+++ b/examples/vdmos/IXTP6N100D2-cap.cir
@@ -2,7 +2,7 @@ Test of VDMOS gate-source and gate-drain capacitance
 
 m1 d g s s IXTP6N100D2
 
-.MODEL IXTP6N100D2 VDMOS(KP=2.9 RS=0.1 RD=1.3 RG=1 VTO=-2.7 LAMBDA=0.03 CGDMAX=3000p CGDMIN=2p CGS=2915p a=1 TT=1371n IS=2.13E-08 N=1.564 RB=0.0038 m=0.548 Vj=0.1 Cjo=3200pF subthres=2.5m)
+.MODEL IXTP6N100D2 VDMOS(KP=2.9 RS=0.1 RD=1.3 RG=1 VTO=-2.7 LAMBDA=0.03 CGDMAX=3000p CGDMIN=2p CGS=2915p a=1 TT=1371n IS=2.13E-08 N=1.564 RB=0.0038 m=0.548 Vj=0.1 Cjo=3200pF ksubthres=.1)
 
 vd d 0 dc 5
 vg g 0 pwl (0 -3 1 3)
diff --git a/examples/vdmos/IXTP6N100D2-n-weak-inv.cir b/examples/vdmos/IXTP6N100D2-n-weak-inv.cir
index f39aafa1e..945ddb593 100644
--- a/examples/vdmos/IXTP6N100D2-n-weak-inv.cir
+++ b/examples/vdmos/IXTP6N100D2-n-weak-inv.cir
@@ -6,7 +6,7 @@ m2 d g s2 s2 IXTP6N100D2_2
 *.model dmod d  is=10n rs=0.05
 
 * LTSPICE model parameters
-*.MODEL IXTP6N100D2 VDMOS(KP=2.9 RS=0.1 RD=1.3 RG=1 VTO=-2.7 LAMBDA=0.03 CGDMAX=3000p CGDMIN=2p CGS=2915p TT=1371n a=1 IS=2.13E-08 N=1.564 RB=0.0038 m=0.548 *Vj=0.1 Cjo=3200pF subthres=2.5m)
+*.MODEL IXTP6N100D2 VDMOS(KP=2.9 RS=0.1 RD=1.3 RG=1 VTO=-2.7 LAMBDA=0.03 CGDMAX=3000p CGDMIN=2p CGS=2915p TT=1371n a=1 IS=2.13E-08 N=1.564 RB=0.0038 m=0.548 *Vj=0.1 Cjo=3200pF ksubthres=0.1)
 
 * equivalent ngspice model parameters
 .MODEL IXTP6N100D2_2 VDMOS(KP=2.9 RS=0.1 RD=1.3 RG=1 VTO=-2.7 LAMBDA=0.03 CGDMAX=3000p CGDMIN=2p CGS=2915p TT=1371n a=1 IS=2.13E-08 N=1.564 RB=0.0038 m=0.548 Vj=0.1 Cjo=3200pF ksubthres=39m)
diff --git a/examples/vdmos/VDMOS-DIO-AC.cir b/examples/vdmos/VDMOS-DIO-AC.cir
index 387c6459c..5a993077d 100644
--- a/examples/vdmos/VDMOS-DIO-AC.cir
+++ b/examples/vdmos/VDMOS-DIO-AC.cir
@@ -7,7 +7,7 @@ Va ad 0 DC 0.5 AC 1 $ DC -20
 Vk kd 0 0
 
 m1 d g s s IXTP6N100D2
-.MODEL IXTP6N100D2 VDMOS(KP=2.9 RS=0.1 RD=1.3 RG=1 VTO=-2.7 LAMBDA=0.03 CGDMAX=3000p CGDMIN=2p CGS=2915p a=1 TT=1371n IS=2.13E-08 N=1.564 RB=0.0038 m=0.548 Vj=0.1 Cjo=3200pF subthres=2.5m subslope=43m subshift=-25m)
+.MODEL IXTP6N100D2 VDMOS(KP=2.9 RS=0.1 RD=1.3 RG=1 VTO=-2.7 LAMBDA=0.03 CGDMAX=3000p CGDMIN=2p CGS=2915p a=1 TT=1371n IS=2.13E-08 N=1.564 RB=0.0038 m=0.548 Vj=0.1 Cjo=3200pF ksubthres=.1 subslope=43m subshift=-25m)
 
 Vd d 0 DC -0.5 AC 1 $ DC 20
 Vg g 0 -5  $ transistor is off
diff --git a/examples/vdmos/VDMOS-DIO.cir b/examples/vdmos/VDMOS-DIO.cir
index e16d4cb9b..cbf9a72fa 100644
--- a/examples/vdmos/VDMOS-DIO.cir
+++ b/examples/vdmos/VDMOS-DIO.cir
@@ -7,7 +7,7 @@ Va ad 0 dc 0 pwl(0 -2 2.5 0.5)
 Vk kd 0 0
 
 m1 d g s s IXTP6N100D2
-.MODEL IXTP6N100D2 VDMOS(KP=2.9 RS=0.1 RD=1.3 RG=1 VTO=-2.7 LAMBDA=0.03 CGDMAX=3000p CGDMIN=2p CGS=2915p a=1 TT=1371n IS=2.13E-08 N=1.564 RB=0.0038 m=0.548 Vj=0.1 Cjo=3200pF subthres=2.5m)
+.MODEL IXTP6N100D2 VDMOS(KP=2.9 RS=0.1 RD=1.3 RG=1 VTO=-2.7 LAMBDA=0.03 CGDMAX=3000p CGDMIN=2p CGS=2915p a=1 TT=1371n IS=2.13E-08 N=1.564 RB=0.0038 m=0.548 Vj=0.1 Cjo=3200pF ksubthres=.1)
 
 Vd d 0 dc 0 pwl(0 2 2.5 -0.5)
 Vg g 0 -5  $ transistor is off
diff --git a/examples/vdmos/vdmosp-out-mtr.cir b/examples/vdmos/vdmosp-out-mtr.cir
index 576913937..2edbc25c0 100644
--- a/examples/vdmos/vdmosp-out-mtr.cir
+++ b/examples/vdmos/vdmosp-out-mtr.cir
@@ -10,7 +10,7 @@ m2 d g s2 s2 IRF7233_2
 .model IRF7233_2 VDMOS(pchan mtriode=2 Rg=3 Rd=8m Rs=6m Vto=-1 Kp=70 Cgdmax=2n Cgdmin=.25n Cgs=3.3n Cjo=.98n Is=98p Rb=10m mfg=International_Rectifier Vds=-12 Ron=20m Qg=49n)
 
 m3 d g s3 s3 IRF7233_3
-.model IRF7233_3 VDMOS(pchan mtriode=2 Rg=3 Rd=8m Rs=6m Vto=-1 Kp=70 Cgdmax=2n Cgdmin=.25n Cgs=3.3n Cjo=.98n Is=98p Rb=10m mfg=International_Rectifier Vds=-12 Ron=20m Qg=49n subthres=0.5)
+.model IRF7233_3 VDMOS(pchan mtriode=2 Rg=3 Rd=8m Rs=6m Vto=-1 Kp=70 Cgdmax=2n Cgdmin=.25n Cgs=3.3n Cjo=.98n Is=98p Rb=10m mfg=International_Rectifier Vds=-12 Ron=20m Qg=49n ksubthres=.1)
 
 vd d 0 -5
 vg g 0 -5