luke
/
ngspice
mirror of https://git.code.sf.net/p/ngspice/ngspice
1
0
Fork 0
Code Issues Packages Projects Releases Wiki Activity

* doc/ngspice.texi: Converted a table to texinfo style.

This commit is contained in:
arno 2000-05-22 20:23:26 +00:00
parent d0a04e740b
commit 95df234092
1 changed files with 119 additions and 93 deletions
Show Stats Download Patch File Download Diff File Expand all files Collapse all files

212
doc/ngspice.texi
View File

@ -1167,11 +1167,19 @@ compute the capacitance from strictly geometric information.
The capacitor has a capacitance computed as The capacitor has a capacitance computed as
@tex
$$
{\rm CAP} = {\rm CJ} ({\rm LENGTH} - {\rm NARROW})
({\rm WIDTH} - {\rm NARROW}) +
2 {\rm CJSW} ({\rm LENGTH} + {\rm WIDTH} - 2 {\rm NARROW})
$$
@end tex
@ifnottex
@example @example
CAP = CJ (LENGTH - NARROW) (WIDTH - NARROW) CAP = CJ (LENGTH - NARROW) (WIDTH - NARROW) +
+ 2 CJSW (LENGTH + WIDTH - 2 NARROW) 2 CJSW (LENGTH + WIDTH - 2 NARROW)
@end example @end example
@end ifnottex
@node Inductors, Coupled (Mutual) Inductors, Semiconductor Capacitor Model (C), Elementary Devices @node Inductors, Coupled (Mutual) Inductors, Semiconductor Capacitor Model (C), Elementary Devices
@subsection Inductors @subsection Inductors
@ -1601,7 +1609,6 @@ $$
@end tex @end tex
@ifnottex @ifnottex
@example @example
| | | |
V(t)=V + V sin 2 J FC t + MDI sin(2 J FS t) V(t)=V + V sin 2 J FC t + MDI sin(2 J FS t)
O A | | O A | |
@ -2095,15 +2102,21 @@ junction capacitance equivalent to the capacitance replaced, and with a
saturation current of ISPERL amps per meter of transmission line and an saturation current of ISPERL amps per meter of transmission line and an
optional series resistance equivalent to RSPERL ohms per meter. optional series resistance equivalent to RSPERL ohms per meter.
@multitable @columnfractions .15 .4 .2 .1 .1 @multitable @columnfractions .1 .45 .1 .15 .1 .1
@item name @tab parameter @tab units @tab default @tab example area @item name @tab parameter
@item K @tab Propagation Constant @tab - @tab 2.0 @tab 1.2 @tab units @tab default @tab example
@item FMAX @tab Maximum Frequency of interest @tab Hz @tab 1.0G @tab 6.5Meg @item K @tab Propagation Constant
@item RPERL @tab Resistance per unit length @tab Z/m @tab 1000 @tab 10 @tab - @tab 2.0 @tab 1.2
@item CPERL @tab Capacitance per unit length @tab F/m @tab 1.0e-15 @tab 1pF @item FMAX @tab Maximum Frequency of interest
@item ISPERL @tab Saturation Current per unit length @tab A/m @tab 0 @tab Hz @tab 1.0G @tab 6.5Meg
@tab - @item RPERL @tab Resistance per unit length
@item RSPERL @tab Diode Resistance per unit length @tab Z/m @tab 0 @tab - - @tab Z/m @tab 1000 @tab 10
@item CPERL @tab Capacitance per unit length
@tab F/m @tab 1.0e-15 @tab 1pF
@item ISPERL @tab Saturation Current per unit length
@tab A/m @tab 0 @tab -
@item RSPERL @tab Diode Resistance per unit length
@tab Z/m @tab 0 @tab -
@end multitable @end multitable
@ -2204,7 +2217,7 @@ exponential increase in the reverse diode current and is determined by
the parameters BV and IBV (both of which are positive numbers). the parameters BV and IBV (both of which are positive numbers).
@multitable @columnfractions .1 .4 .2 .1 .1 .1 @multitable @columnfractions .1 .45 .15 .15 .15
@item name @tab parameter @tab units @tab default @tab example @tab area @item name @tab parameter @tab units @tab default @tab example @tab area
@item IS @tab saturation current @tab A @tab 1.0e-14 @tab 1.0e-14 @tab * @item IS @tab saturation current @tab A @tab 1.0e-14 @tab 1.0e-14 @tab *
@item RS @tab ohmic resistance @tab Z @tab 0 @tab 10 @tab * @item RS @tab ohmic resistance @tab Z @tab 0 @tab 10 @tab *
@ -2224,7 +2237,6 @@ the parameters BV and IBV (both of which are positive numbers).
@tab - @tab 0.5 @tab depletion capacitance formula @tab - @tab 0.5 @tab depletion capacitance formula
@item BV @tab reverse breakdown voltage @tab V @tab infinite @tab 40.0 @item BV @tab reverse breakdown voltage @tab V @tab infinite @tab 40.0
@item IBV @tab current at breakdown voltage @tab A @tab 1.0e-3 @item IBV @tab current at breakdown voltage @tab A @tab 1.0e-3
@tab o
@item TNOM @tab parameter measurement temperature @tab C @tab 27 @tab 50 @item TNOM @tab parameter measurement temperature @tab C @tab 27 @tab 50
@end multitable @end multitable
@ -2306,7 +2318,7 @@ accepted.
Modified Gummel-Poon BJT Parameters. Modified Gummel-Poon BJT Parameters.
@multitable @columnfractions .1 .4 .2 .1 .1 .1 @multitable @columnfractions .1 .45 .15 .15 .15
@item name @tab parameter @tab units @tab default @tab example @tab area @item name @tab parameter @tab units @tab default @tab example @tab area
@item IS @tab transport saturation current @tab A @tab 1.0e-16 @tab @item IS @tab transport saturation current @tab A @tab 1.0e-16 @tab
1.0e-15 @tab * 1.0e-15 @tab *
@ -2363,7 +2375,7 @@ internal base node @tab - @tab 1
@item AF @tab flicker-noise exponent @tab - @tab 1 @item AF @tab flicker-noise exponent @tab - @tab 1
@item FC @tab coefficient for forward-bias depletion capacitance formula @item FC @tab coefficient for forward-bias depletion capacitance formula
@tab - @tab 0.5 @tab o @tab - @tab 0.5 @tab o
@item TNOM @tab Parameter measurement temperature @tab C @tab 27 @tab 50 @item TNOM @tab Parameter measurement temperature @tab °C @tab 27 @tab 50
@end multitable @end multitable
@ -2417,7 +2429,7 @@ junction voltage and are defined by the parameters CGS, CGD, and PB.
Note that in Spice3f and later, a fitting parameter B has been added. Note that in Spice3f and later, a fitting parameter B has been added.
For details, see [9]. For details, see [9].
@multitable @columnfractions .1 .4 .1 .1 .1 .1 @multitable @columnfractions .1 .45 .15 .15 .15
@item name @tab parameter @tab units @tab default @tab example @tab area @item name @tab parameter @tab units @tab default @tab example @tab area
@item VTO @tab threshold voltage (@math{V_T0}) @tab V @tab -2.0 @tab -2.0 @item VTO @tab threshold voltage (@math{V_T0}) @tab V @tab -2.0 @tab -2.0
@item BETA @tab transconductance parameter (B) @item BETA @tab transconductance parameter (B)
@ -2568,81 +2580,95 @@ fitting, the option "BADMOS3" may be set to use the old implementation
(see the section on simulation variables and the ".OPTIONS" line). (see the section on simulation variables and the ".OPTIONS" line).
SPICE level 1, 2, 3 and 6 parameters: SPICE level 1, 2, 3 and 6 parameters:
@example @multitable @columnfractions .1 .45 .15 .15 .15
name parameter units default example @item name @tab parameter
@tab units @tab default @tab example
1 LEVEL model index - 1 @item LEVEL @tab model index
2 VTO zero-bias threshold voltage (V ) V 0.0 1.0 @tab - @tab 1
TO 2 @item VTO @tab zero-bias threshold voltage (@math{V_T0})
3 KP transconductance parameter A/V 2.0e-5 3.1e-5 @tab V @tab 0.0 @tab 1.0
1/2 @item KP @tab transconductance parameter
4 GAMMA bulk threshold parameter (\) V 0.0 0.37 @tab @math{A/V^2} @tab 2.0e-5 @tab 3.1e-5
5 PHI surface potential (U) V 0.6 0.65 @item GAMMA @tab bulk threshold parameter
6 LAMBDA channel-length modulation @tab @math{V^1/2} @tab 0.0 @tab 0.37
(MOS1 and MOS2 only) (L) 1/V 0.0 0.02 @item PHI @tab surface potential (U)
7 RD drain ohmic resistance Z 0.0 1.0 @tab V @tab 0.6 @tab 0.65
8 RS source ohmic resistance Z 0.0 1.0 @item LAMBDA @tab channel-length modulation (MOS1 and MOS2 only) (L)
9 CBD zero-bias B-D junction capacitance F 0.0 20fF @tab 1/V @tab 0.0 @tab 0.02
10 CBS zero-bias B-S junction capacitance F 0.0 20fF @item RD @tab drain ohmic resistance
11 IS bulk junction saturation current (I ) A 1.0e-14 1.0e-15 @tab Z @tab 0.0 @tab 1.0
S @item RS @tab source ohmic resistance
12 PB bulk junction potential V 0.8 0.87 @tab Z @tab 0.0 @tab 1.0
13 CGSO gate-source overlap capacitance @item CBD @tab zero-bias B-D junction capacitance
per meter channel width F/m 0.0 4.0e-11 @tab F @tab 0.0 @tab 20fF
14 CGDO gate-drain overlap capacitance @item CBS @tab zero-bias B-S junction capacitance
per meter channel width F/m 0.0 4.0e-11 @tab F @tab 0.0 @tab 20fF
15 CGBO gate-bulk overlap capacitance @item IS @tab bulk junction saturation current (@math{I_S})
per meter channel length F/m 0.0 2.0e-10 @tab A @tab 1.0e-14 @tab 1.0e-15
16 RSH drain and source diffusion @item PB @tab bulk junction potential
sheet resistance Z/[] 0.0 10.0 @tab V @tab 0.8 @tab 0.87
17 CJ zero-bias bulk junction bottom cap. @item CGSO @tab gate-source overlap capacitance per meter channel width
2 @tab F/m @tab 0.0 @tab 4.0e-11
per sq-meter of junction area F/m 0.0 2.0e-4 @item CGDO @tab gate-drain overlap capacitance per meter channel width
18 MJ bulk junction bottom grading coeff. - 0.5 0.5 @tab F/m @tab 0.0 @tab 4.0e-11
19 CJSW zero-bias bulk junction sidewall cap. @item CGBO @tab gate-bulk overlap capacitance per meter channel length
per meter of junction perimeter F/m 0.0 1.0e-9 @tab F/m @tab 0.0 @tab 2.0e-10
20 MJSW bulk junction sidewall grading coeff. - 0.50(level1) @item RSH @tab drain and source diffusion sheet resistance
0.33(level2, 3) @tab Z/[] @tab 0.0 @tab 10.0
21 JS bulk junction saturation current @item CJ @tab zero-bias bulk junction bottom cap. per sq-meter of junction area
2 @tab @math{F/m^2} @tab 0.0 @tab 2.0e-4
per sq-meter of junction area A/m 1.0e-8 @item MJ @tab bulk junction bottom grading coeff.
22 TOX oxide thickness meter 1.0e-7 1.0e-7 @tab - @tab 0.5 @tab 0.5
3 @item CJSW @tab zero-bias bulk junction sidewall cap. per meter of junction perimeter
23 NSUB substrate doping 1/cm 0.0 4.0e15 @tab F/m @tab 0.0 @tab 1.0e-9
2 @item MJSW @tab bulk junction sidewall grading coeff.
24 NSS surface state density 1/cm 0.0 1.0e10 @tab - @tab 0.50(level1), 0.33(level2, 3)
2 @item JS @tab bulk junction saturation current per sq-meter of junction area
25 NFS fast surface state density 1/cm 0.0 1.0e10 @tab @math{A/m^2} @tab 1.0e-8
@item TOX @tab oxide thickness
26 TPG type of gate material: - 1.0 @tab meter @tab 1.0e-7 @tab 1.0e-7
+1 opp. to substrate @item NSUB @tab substrate doping
-1 same as substrate @tab @math{1/cm^3} @tab 0.0 @tab 4.0e15
0 Al gate @item NSS @tab surface state density
27 XJ metallurgical junction depth meter 0.0 1M @tab @math{1/cm^2} @tab 0.0 @tab 1.0e10
28 LD lateral diffusion meter 0.0 0.8M @item NFS @tab fast surface state density
2 @tab @math{1/cm^2} @tab 0.0 @tab 1.0e10
29 UO surface mobility cm /Vs 600 700 @item TPG @tab type of gate material:
30 UCRIT critical field for mobility +1 opp. to substrate, -1 same as substrate, 0 Al gate
degradation (MOS2 only) V/cm 1.0e4 1.0e4 @tab - @tab 1.0
31 UEXP critical field exponent in @item XJ @tab metallurgical junction depth
mobility degradation (MOS2 only) - 0.0 0.1 @tab meter @tab 0.0 @tab 1M
32 UTRA transverse field coeff. (mobility) @item LD @tab lateral diffusion
(deleted for MOS2) - 0.0 0.3 @tab meter @tab 0.0 @tab 0.8M
33 VMAX maximum drift velocity of carriers m/s 0.0 5.0e4 @item UO @tab surface mobility
34 NEFF total channel-charge (fixed and @tab @math{cm^2/Vs} @tab 600 @tab 700
mobile) coefficient (MOS2 only) - 1.0 5.0 @item UCRIT @tab critical field for mobility degradation (MOS2 only)
35 KF flicker noise coefficient - 0.0 1.0e-26 @tab V/cm @tab 1.0e4 @tab 1.0e4
36 AF flicker noise exponent - 1.0 1.2 @item UEXP @tab critical field exponent in mobility degradation (MOS2 only)
37 FC coefficient for forward-bias @tab - @tab 0.0 @tab 0.1
depletion capacitance formula - 0.5 @item UTRA @tab transverse field coeff. (mobility) (deleted for MOS2)
38 DELTA width effect on threshold voltage @tab - @tab 0.0 @tab 0.3
(MOS2 and MOS3) - 0.0 1.0 @item VMAX @tab maximum drift velocity of carriers
39 THETA mobility modulation (MOS3 only) 1/V 0.0 0.1 @tab m/s @tab 0.0 @tab 5.0e4
40 ETA static feedback (MOS3 only) - 0.0 1.0 @item NEFF @tab total channel-charge (fixed and mobile) coefficient (MOS2 only)
41 KAPPA saturation field factor (MOS3 only) - 0.2 0.5 @tab - @tab 1.0 @tab 5.0
o @item KF @tab flicker noise coefficient
42 TNOM parameter measurement temperature C 27 50 @tab - @tab 0.0 @tab 1.0e-26
@end example @item AF @tab flicker noise exponent
@tab - @tab 1.0 @tab 1.2
@item FC @tab coefficient for forward-bias depletion capacitance formula
@tab - @tab 0.5
@item DELTA @tab width effect on threshold voltage (MOS2 and MOS3)
@tab - @tab 0.0 @tab 1.0
@item THETA @tab mobility modulation (MOS3 only)
@tab 1/V @tab 0.0 @tab 0.1
@item ETA @tab static feedback (MOS3 only)
@tab - @tab 0.0 @tab 1.0
@item KAPPA @tab saturation field factor (MOS3 only)
@tab - @tab 0.2 @tab 0.5
@item TNOM @tab parameter measurement temperature
@tab °C @tab 27 @tab 50
@end multitable
The level 4 and level 5 (BSIM1 and BSIM2) parameters are all values The level 4 and level 5 (BSIM1 and BSIM2) parameters are all values