diff --git a/doc/ngspice.texi b/doc/ngspice.texi index 1e4cb8421..b66d61e92 100644 --- a/doc/ngspice.texi +++ b/doc/ngspice.texi @@ -1167,11 +1167,19 @@ compute the capacitance from strictly geometric information. The capacitor has a capacitance computed as +@tex +$$ + {\rm CAP} = {\rm CJ} ({\rm LENGTH} - {\rm NARROW}) + ({\rm WIDTH} - {\rm NARROW}) + + 2 {\rm CJSW} ({\rm LENGTH} + {\rm WIDTH} - 2 {\rm NARROW}) +$$ +@end tex +@ifnottex @example -CAP = CJ (LENGTH - NARROW) (WIDTH - NARROW) - + 2 CJSW (LENGTH + WIDTH - 2 NARROW) + CAP = CJ (LENGTH - NARROW) (WIDTH - NARROW) + + 2 CJSW (LENGTH + WIDTH - 2 NARROW) @end example - +@end ifnottex @node Inductors, Coupled (Mutual) Inductors, Semiconductor Capacitor Model (C), Elementary Devices @subsection Inductors @@ -1601,7 +1609,6 @@ $$ @end tex @ifnottex @example - | | V(t)=V + V sin 2 J FC t + MDI sin(2 J FS t) O A | | @@ -2095,15 +2102,21 @@ junction capacitance equivalent to the capacitance replaced, and with a saturation current of ISPERL amps per meter of transmission line and an optional series resistance equivalent to RSPERL ohms per meter. -@multitable @columnfractions .15 .4 .2 .1 .1 -@item name @tab parameter @tab units @tab default @tab example area -@item K @tab Propagation Constant @tab - @tab 2.0 @tab 1.2 -@item FMAX @tab Maximum Frequency of interest @tab Hz @tab 1.0G @tab 6.5Meg -@item RPERL @tab Resistance per unit length @tab Z/m @tab 1000 @tab 10 -@item CPERL @tab Capacitance per unit length @tab F/m @tab 1.0e-15 @tab 1pF -@item ISPERL @tab Saturation Current per unit length @tab A/m @tab 0 -@tab - -@item RSPERL @tab Diode Resistance per unit length @tab Z/m @tab 0 @tab - - +@multitable @columnfractions .1 .45 .1 .15 .1 .1 +@item name @tab parameter + @tab units @tab default @tab example +@item K @tab Propagation Constant + @tab - @tab 2.0 @tab 1.2 +@item FMAX @tab Maximum Frequency of interest + @tab Hz @tab 1.0G @tab 6.5Meg +@item RPERL @tab Resistance per unit length + @tab Z/m @tab 1000 @tab 10 +@item CPERL @tab Capacitance per unit length + @tab F/m @tab 1.0e-15 @tab 1pF +@item ISPERL @tab Saturation Current per unit length + @tab A/m @tab 0 @tab - +@item RSPERL @tab Diode Resistance per unit length + @tab Z/m @tab 0 @tab - @end multitable @@ -2204,7 +2217,7 @@ exponential increase in the reverse diode current and is determined by the parameters BV and IBV (both of which are positive numbers). -@multitable @columnfractions .1 .4 .2 .1 .1 .1 +@multitable @columnfractions .1 .45 .15 .15 .15 @item name @tab parameter @tab units @tab default @tab example @tab area @item IS @tab saturation current @tab A @tab 1.0e-14 @tab 1.0e-14 @tab * @item RS @tab ohmic resistance @tab Z @tab 0 @tab 10 @tab * @@ -2224,7 +2237,6 @@ the parameters BV and IBV (both of which are positive numbers). @tab - @tab 0.5 @tab depletion capacitance formula @item BV @tab reverse breakdown voltage @tab V @tab infinite @tab 40.0 @item IBV @tab current at breakdown voltage @tab A @tab 1.0e-3 - @tab o @item TNOM @tab parameter measurement temperature @tab C @tab 27 @tab 50 @end multitable @@ -2306,7 +2318,7 @@ accepted. Modified Gummel-Poon BJT Parameters. -@multitable @columnfractions .1 .4 .2 .1 .1 .1 +@multitable @columnfractions .1 .45 .15 .15 .15 @item name @tab parameter @tab units @tab default @tab example @tab area @item IS @tab transport saturation current @tab A @tab 1.0e-16 @tab 1.0e-15 @tab * @@ -2363,7 +2375,7 @@ internal base node @tab - @tab 1 @item AF @tab flicker-noise exponent @tab - @tab 1 @item FC @tab coefficient for forward-bias depletion capacitance formula @tab - @tab 0.5 @tab o -@item TNOM @tab Parameter measurement temperature @tab C @tab 27 @tab 50 +@item TNOM @tab Parameter measurement temperature @tab °C @tab 27 @tab 50 @end multitable @@ -2417,7 +2429,7 @@ junction voltage and are defined by the parameters CGS, CGD, and PB. Note that in Spice3f and later, a fitting parameter B has been added. For details, see [9]. -@multitable @columnfractions .1 .4 .1 .1 .1 .1 +@multitable @columnfractions .1 .45 .15 .15 .15 @item name @tab parameter @tab units @tab default @tab example @tab area @item VTO @tab threshold voltage (@math{V_T0}) @tab V @tab -2.0 @tab -2.0 @item BETA @tab transconductance parameter (B) @@ -2568,81 +2580,95 @@ fitting, the option "BADMOS3" may be set to use the old implementation (see the section on simulation variables and the ".OPTIONS" line). SPICE level 1, 2, 3 and 6 parameters: -@example -name parameter units default example - - 1 LEVEL model index - 1 - 2 VTO zero-bias threshold voltage (V ) V 0.0 1.0 - TO 2 - 3 KP transconductance parameter A/V 2.0e-5 3.1e-5 - 1/2 - 4 GAMMA bulk threshold parameter (\) V 0.0 0.37 - 5 PHI surface potential (U) V 0.6 0.65 - 6 LAMBDA channel-length modulation - (MOS1 and MOS2 only) (L) 1/V 0.0 0.02 - 7 RD drain ohmic resistance Z 0.0 1.0 - 8 RS source ohmic resistance Z 0.0 1.0 - 9 CBD zero-bias B-D junction capacitance F 0.0 20fF - 10 CBS zero-bias B-S junction capacitance F 0.0 20fF - 11 IS bulk junction saturation current (I ) A 1.0e-14 1.0e-15 - S - 12 PB bulk junction potential V 0.8 0.87 - 13 CGSO gate-source overlap capacitance - per meter channel width F/m 0.0 4.0e-11 - 14 CGDO gate-drain overlap capacitance - per meter channel width F/m 0.0 4.0e-11 - 15 CGBO gate-bulk overlap capacitance - per meter channel length F/m 0.0 2.0e-10 - 16 RSH drain and source diffusion - sheet resistance Z/[] 0.0 10.0 - 17 CJ zero-bias bulk junction bottom cap. - 2 - per sq-meter of junction area F/m 0.0 2.0e-4 - 18 MJ bulk junction bottom grading coeff. - 0.5 0.5 - 19 CJSW zero-bias bulk junction sidewall cap. - per meter of junction perimeter F/m 0.0 1.0e-9 - 20 MJSW bulk junction sidewall grading coeff. - 0.50(level1) - 0.33(level2, 3) - 21 JS bulk junction saturation current - 2 - per sq-meter of junction area A/m 1.0e-8 - 22 TOX oxide thickness meter 1.0e-7 1.0e-7 - 3 - 23 NSUB substrate doping 1/cm 0.0 4.0e15 - 2 - 24 NSS surface state density 1/cm 0.0 1.0e10 - 2 - 25 NFS fast surface state density 1/cm 0.0 1.0e10 - - 26 TPG type of gate material: - 1.0 - +1 opp. to substrate - -1 same as substrate - 0 Al gate - 27 XJ metallurgical junction depth meter 0.0 1M - 28 LD lateral diffusion meter 0.0 0.8M - 2 - 29 UO surface mobility cm /Vs 600 700 - 30 UCRIT critical field for mobility - degradation (MOS2 only) V/cm 1.0e4 1.0e4 - 31 UEXP critical field exponent in - mobility degradation (MOS2 only) - 0.0 0.1 - 32 UTRA transverse field coeff. (mobility) - (deleted for MOS2) - 0.0 0.3 - 33 VMAX maximum drift velocity of carriers m/s 0.0 5.0e4 - 34 NEFF total channel-charge (fixed and - mobile) coefficient (MOS2 only) - 1.0 5.0 - 35 KF flicker noise coefficient - 0.0 1.0e-26 - 36 AF flicker noise exponent - 1.0 1.2 - 37 FC coefficient for forward-bias - depletion capacitance formula - 0.5 - 38 DELTA width effect on threshold voltage - (MOS2 and MOS3) - 0.0 1.0 - 39 THETA mobility modulation (MOS3 only) 1/V 0.0 0.1 - 40 ETA static feedback (MOS3 only) - 0.0 1.0 - 41 KAPPA saturation field factor (MOS3 only) - 0.2 0.5 - o - 42 TNOM parameter measurement temperature C 27 50 -@end example +@multitable @columnfractions .1 .45 .15 .15 .15 +@item name @tab parameter + @tab units @tab default @tab example +@item LEVEL @tab model index + @tab - @tab 1 +@item VTO @tab zero-bias threshold voltage (@math{V_T0}) + @tab V @tab 0.0 @tab 1.0 +@item KP @tab transconductance parameter + @tab @math{A/V^2} @tab 2.0e-5 @tab 3.1e-5 +@item GAMMA @tab bulk threshold parameter + @tab @math{V^1/2} @tab 0.0 @tab 0.37 +@item PHI @tab surface potential (U) + @tab V @tab 0.6 @tab 0.65 +@item LAMBDA @tab channel-length modulation (MOS1 and MOS2 only) (L) + @tab 1/V @tab 0.0 @tab 0.02 +@item RD @tab drain ohmic resistance + @tab Z @tab 0.0 @tab 1.0 +@item RS @tab source ohmic resistance + @tab Z @tab 0.0 @tab 1.0 +@item CBD @tab zero-bias B-D junction capacitance + @tab F @tab 0.0 @tab 20fF +@item CBS @tab zero-bias B-S junction capacitance + @tab F @tab 0.0 @tab 20fF +@item IS @tab bulk junction saturation current (@math{I_S}) + @tab A @tab 1.0e-14 @tab 1.0e-15 +@item PB @tab bulk junction potential + @tab V @tab 0.8 @tab 0.87 +@item CGSO @tab gate-source overlap capacitance per meter channel width + @tab F/m @tab 0.0 @tab 4.0e-11 +@item CGDO @tab gate-drain overlap capacitance per meter channel width + @tab F/m @tab 0.0 @tab 4.0e-11 +@item CGBO @tab gate-bulk overlap capacitance per meter channel length + @tab F/m @tab 0.0 @tab 2.0e-10 +@item RSH @tab drain and source diffusion sheet resistance + @tab Z/[] @tab 0.0 @tab 10.0 +@item CJ @tab zero-bias bulk junction bottom cap. per sq-meter of junction area + @tab @math{F/m^2} @tab 0.0 @tab 2.0e-4 +@item MJ @tab bulk junction bottom grading coeff. + @tab - @tab 0.5 @tab 0.5 +@item CJSW @tab zero-bias bulk junction sidewall cap. per meter of junction perimeter + @tab F/m @tab 0.0 @tab 1.0e-9 +@item MJSW @tab bulk junction sidewall grading coeff. + @tab - @tab 0.50(level1), 0.33(level2, 3) +@item JS @tab bulk junction saturation current per sq-meter of junction area + @tab @math{A/m^2} @tab 1.0e-8 +@item TOX @tab oxide thickness + @tab meter @tab 1.0e-7 @tab 1.0e-7 +@item NSUB @tab substrate doping + @tab @math{1/cm^3} @tab 0.0 @tab 4.0e15 +@item NSS @tab surface state density + @tab @math{1/cm^2} @tab 0.0 @tab 1.0e10 +@item NFS @tab fast surface state density + @tab @math{1/cm^2} @tab 0.0 @tab 1.0e10 +@item TPG @tab type of gate material: + +1 opp. to substrate, -1 same as substrate, 0 Al gate + @tab - @tab 1.0 +@item XJ @tab metallurgical junction depth + @tab meter @tab 0.0 @tab 1M +@item LD @tab lateral diffusion + @tab meter @tab 0.0 @tab 0.8M +@item UO @tab surface mobility + @tab @math{cm^2/Vs} @tab 600 @tab 700 +@item UCRIT @tab critical field for mobility degradation (MOS2 only) + @tab V/cm @tab 1.0e4 @tab 1.0e4 +@item UEXP @tab critical field exponent in mobility degradation (MOS2 only) + @tab - @tab 0.0 @tab 0.1 +@item UTRA @tab transverse field coeff. (mobility) (deleted for MOS2) + @tab - @tab 0.0 @tab 0.3 +@item VMAX @tab maximum drift velocity of carriers + @tab m/s @tab 0.0 @tab 5.0e4 +@item NEFF @tab total channel-charge (fixed and mobile) coefficient (MOS2 only) + @tab - @tab 1.0 @tab 5.0 +@item KF @tab flicker noise coefficient + @tab - @tab 0.0 @tab 1.0e-26 +@item AF @tab flicker noise exponent + @tab - @tab 1.0 @tab 1.2 +@item FC @tab coefficient for forward-bias depletion capacitance formula + @tab - @tab 0.5 +@item DELTA @tab width effect on threshold voltage (MOS2 and MOS3) + @tab - @tab 0.0 @tab 1.0 +@item THETA @tab mobility modulation (MOS3 only) + @tab 1/V @tab 0.0 @tab 0.1 +@item ETA @tab static feedback (MOS3 only) + @tab - @tab 0.0 @tab 1.0 +@item KAPPA @tab saturation field factor (MOS3 only) + @tab - @tab 0.2 @tab 0.5 +@item TNOM @tab parameter measurement temperature + @tab °C @tab 27 @tab 50 +@end multitable The level 4 and level 5 (BSIM1 and BSIM2) parameters are all values