Add some description, correct minor bugs.

This commit is contained in:
Holger Vogt 2018-09-01 23:09:16 +02:00
parent 12c864fb5a
commit 925cb49ff2
5 changed files with 53 additions and 17 deletions

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@ -12,7 +12,7 @@
** Lmin=0.02 Lmax=10 Wmin=0.6 Wmax=20
** By Mohan Dunga, Wenwei Yang 05/18/2007
.MODEL N1 NMOS LEVEL = 14
.MODEL NBSIM4 NMOS LEVEL = 14
+VERSION = 4.7 BINUNIT = 1 PARAMCHK= 0 MOBMOD = 0
+CAPMOD = 1 IGCMOD = 1 IGBMOD = 1 GEOMOD = 1

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@ -12,7 +12,7 @@
** Lmin=0.02 Lmax=10 Wmin=0.6 Wmax=20
** By Mohan Dunga, Wenwei Yang 05/18/2007
.MODEL P1 PMOS LEVEL = 14
.MODEL PBSIM4 PMOS LEVEL = 14
+VERSION = 4.6.5 BINUNIT = 1 PARAMCHK= 0 MOBMOD = 0
+CAPMOD = 2 IGCMOD = 1 IGBMOD = 1 GEOMOD = 1

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@ -1,4 +1,17 @@
** NMOSFET: table generator with BSIM4 2D (Vdrain, Vgate)
* This file may be run by 'ngspice table-generator-b4-2d.sp'
* It will generate a 2D data table by simulating the MOS drain current
* as function of drain and gate voltages. The simulation uses
* the ngspice BSIM4.6.1 MOS model and Berkeley model parameters.
* This table is an input file for the XSPICE 2D table model.
* You have to select NMOS or PMOS by manually editing this file: currently
* PMOS is selected. For NMOS change '*' in column 1
* for CSPARAM, m1, outfile, echo *table...
* In addition you may change the step sizes vdstep vgstep vbstep in CSPARAM
* to obtain the required resolution for the data.
* These tables will contain pure dc data. For transient simulation you may
* need to add some capacitors to the device model for a 'real world' simulation.
*NMOS
*.csparam vdstart=-0.1
*.csparam vdstop=1.8
@ -16,19 +29,20 @@
.csparam vgstep=0.01
** Circuit Description **
*m1 2 1 3 0 n1 L=0.13u W=10.0u rgeoMod=1
m1 2 1 3 0 p1 L=0.13u W=10.0u rgeoMod=1
*m1 2 1 3 0 nbsim4 L=0.13u W=10.0u rgeoMod=1
m1 2 1 3 0 pbsim4 L=0.13u W=10.0u rgeoMod=1
vgs 1 0 1.8
vds 2 0 1.8
vss 3 0 0
.control
** output file **
set outfile = "bsim4n-2d-1.table"
*set outfile = "bsim4n-2d-1.table"
set outfile = "bsim4p-2d-1.table"
*dc vds 0 1.8 0.05 vgs 0 1.8 0.3
save i(vss)
echo *table for nmos bsim 4 > $outfile
*echo *table for nmos bsim 4 > $outfile
echo *table for pmos bsim 4 > $outfile
let xcount = floor((vdstop-vdstart)/vdstep) + 1
let ycount = floor((vgstop-vgstart)/vgstep) + 1
@ -81,7 +95,7 @@ end
.endc
.include ./modelcards/modelcard.pmos
.include ./modelcards/modelcard.nmos
.end

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@ -1,4 +1,17 @@
** NMOSFET: table generator with BSIM4 2D (Vdrain, Vgate)
** NMOSFET: table generator with BSIM4 3D (Vdrain, Vgate, Vbulk)
* This file may be run by 'ngspice table-generator-b4-3d.sp'
* It will generate a 3D data table by simulating the MOS drain current
* as function of drain and gate voltages. The simulation uses
* the ngspice BSIM4.6.1 MOS model and Berkeley model parameters.
* This table is an input file for the XSPICE 3D table model.
* You have to select NMOS or PMOS by manually editing this file: currently
* NMOS is selected. For PMOS change '*' in column 1
* for CSPARAM, m1, outfile, echo *table...
* In addition you may change the step sizes vdstep vgstep vbstep in CSPARAM
* to obtain the required resolution for the data.
* These tables will contain pure dc data. For transient simulation you may
* need to add some capacitors to the device model for a 'real world' simulation.
*NMOS
.csparam vdstart=-0.1
.csparam vdstop=1.8
@ -22,8 +35,8 @@
*.csparam vbstep=0.2
** Circuit Description **
m1 2 1 3 4 n1 L=0.13u W=10.0u rgeoMod=1
*m1 2 1 3 4 p1 L=0.13u W=10.0u rgeoMod=1
m1 2 1 3 4 nbsim4 L=0.13u W=10.0u rgeoMod=1
*m1 2 1 3 4 pbsim4 L=0.13u W=10.0u rgeoMod=1
vgs 1 0 1.8
vds 2 0 1.8
vss 3 0 0
@ -32,9 +45,11 @@ vbs 4 0 0
.control
** output file **
set outfile = "bsim4n-3d-1.table"
*set outfile = "bsim4p-3d-1.table"
save i(vss)
echo * 3D table for nmos bsim 4 > $outfile
*echo * 3D table for nmos bsim 4 > $outfile
let xcount = floor((vdstop-vdstart)/vdstep) + 1
let ycount = floor((vgstop-vgstart)/vgstep) + 1
@ -101,7 +116,7 @@ while lcz < zcount
end
.endc
.include ./modelcards/modelcard.pmos
.include ./modelcards/modelcard.nmos
.include ./modelcards/modelcard.pmos
.end

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@ -1,5 +1,15 @@
** npn bipolar: table generator with q 2D (Vce, Ib)
*NMOS
* This file may be run by 'ngspice table-generator-q-2d.sp'
* It will generate a 2D data table by simulating the bipolar collector current
* as function of collector voltage and base current. The simulation uses
* the ngspice bipolar model and model parameters of a clc409 transitor.
* This table is an input file for the XSPICE 2D table model.
* You may change the step sizes vcstep ibstep in CSPARAM
* to obtain the required resolution for the data.
* These tables will contain pure dc data. For transient simulation you may
* need to add some capacitors to the device model for a 'real world' simulation.
*NPN
.csparam vcstart=-0.2
.csparam vcstop=6.4
.csparam vcstep=0.05
@ -79,14 +89,11 @@ while lcy < ycount
let lcy = lcy + 1
end
label next
end
.endc
.MODEL QINN NPN
+ IS =0.166f BF =3.239E+02 NF =1.000E+00 VAF=8.457E+01
+ IKF=2.462E-02 ISE=2.956E-17 NE =1.197E+00 BR =3.719E+01