fix comments in HICUM scaling

This commit is contained in:
Markus Mueller 2020-07-05 18:14:08 +02:00
parent d7dd26880c
commit 90ab76d876
1 changed files with 3 additions and 3 deletions

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@ -174,7 +174,7 @@ int hicum_thermal_update(HICUMmodel *inModel, HICUMinstance *inInstance, double
// Classical spice scaling with "area" is implemented, but it is not recommended to be used. If you want
// scaling, more sophisticated expressions should be used. Those can be found in modern PDKs or should be
// provided by modeling engineers.
// For discrete devices, the multiplication facotor "m" should give reasonable results.
// For discrete devices, the multiplication factor "m" should give reasonable results.
//
// The HICUMm device multiplicaton factor can be exected to give good results.
// The following variables need scaling in HICUM:
@ -193,7 +193,7 @@ int hicum_thermal_update(HICUMmodel *inModel, HICUMinstance *inInstance, double
// rcx ~1/(area*m) -> assume that scaling with "area" is due to lE0 increase
// rbi0 ~1/(area*m) -> assume that scaling with "area" is due to lE0 increase
// rth ~1/(area*m) -> bad assumption, but more transistor geometry needs to be known for accurate scaling
// crth ~ area*m -> bad assumption, but more transistor geometry needs to be known for accurate scaling
// cth ~ area*m -> bad assumption, but more transistor geometry needs to be known for accurate scaling
// Substrate related parameters not scaled on purpose. This is very geometry dependent?
area_times_m = here->HICUMm*here->HICUMarea;
@ -219,7 +219,7 @@ int hicum_thermal_update(HICUMmodel *inModel, HICUMinstance *inInstance, double
cbcpar_scaled = model->HICUMcbcpar * here->HICUMm;
ibcxs_scaled = model->HICUMibcxs * here->HICUMm;
qavl_scaled = model->HICUMqavl * area_times_m;
//resistances //crth todo
//resistances
re_scaled = model->HICUMre / area_times_m;
rci0_scaled = model->HICUMrci0 / area_times_m;
rbx_scaled = model->HICUMrbx / area_times_m;