fix comments in HICUM scaling
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@ -174,7 +174,7 @@ int hicum_thermal_update(HICUMmodel *inModel, HICUMinstance *inInstance, double
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// Classical spice scaling with "area" is implemented, but it is not recommended to be used. If you want
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// scaling, more sophisticated expressions should be used. Those can be found in modern PDKs or should be
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// provided by modeling engineers.
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// For discrete devices, the multiplication facotor "m" should give reasonable results.
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// For discrete devices, the multiplication factor "m" should give reasonable results.
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//
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// The HICUMm device multiplicaton factor can be exected to give good results.
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// The following variables need scaling in HICUM:
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@ -193,7 +193,7 @@ int hicum_thermal_update(HICUMmodel *inModel, HICUMinstance *inInstance, double
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// rcx ~1/(area*m) -> assume that scaling with "area" is due to lE0 increase
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// rbi0 ~1/(area*m) -> assume that scaling with "area" is due to lE0 increase
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// rth ~1/(area*m) -> bad assumption, but more transistor geometry needs to be known for accurate scaling
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// crth ~ area*m -> bad assumption, but more transistor geometry needs to be known for accurate scaling
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// cth ~ area*m -> bad assumption, but more transistor geometry needs to be known for accurate scaling
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// Substrate related parameters not scaled on purpose. This is very geometry dependent?
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area_times_m = here->HICUMm*here->HICUMarea;
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@ -219,7 +219,7 @@ int hicum_thermal_update(HICUMmodel *inModel, HICUMinstance *inInstance, double
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cbcpar_scaled = model->HICUMcbcpar * here->HICUMm;
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ibcxs_scaled = model->HICUMibcxs * here->HICUMm;
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qavl_scaled = model->HICUMqavl * area_times_m;
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//resistances //crth todo
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//resistances
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re_scaled = model->HICUMre / area_times_m;
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rci0_scaled = model->HICUMrci0 / area_times_m;
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rbx_scaled = model->HICUMrbx / area_times_m;
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