diff --git a/src/spicelib/devices/hicum2/hicumL2temp.cpp b/src/spicelib/devices/hicum2/hicumL2temp.cpp index 2c9d6508d..b2d95a096 100644 --- a/src/spicelib/devices/hicum2/hicumL2temp.cpp +++ b/src/spicelib/devices/hicum2/hicumL2temp.cpp @@ -174,7 +174,7 @@ int hicum_thermal_update(HICUMmodel *inModel, HICUMinstance *inInstance, double // Classical spice scaling with "area" is implemented, but it is not recommended to be used. If you want // scaling, more sophisticated expressions should be used. Those can be found in modern PDKs or should be // provided by modeling engineers. - // For discrete devices, the multiplication facotor "m" should give reasonable results. + // For discrete devices, the multiplication factor "m" should give reasonable results. // // The HICUMm device multiplicaton factor can be exected to give good results. // The following variables need scaling in HICUM: @@ -193,7 +193,7 @@ int hicum_thermal_update(HICUMmodel *inModel, HICUMinstance *inInstance, double // rcx ~1/(area*m) -> assume that scaling with "area" is due to lE0 increase // rbi0 ~1/(area*m) -> assume that scaling with "area" is due to lE0 increase // rth ~1/(area*m) -> bad assumption, but more transistor geometry needs to be known for accurate scaling - // crth ~ area*m -> bad assumption, but more transistor geometry needs to be known for accurate scaling + // cth ~ area*m -> bad assumption, but more transistor geometry needs to be known for accurate scaling // Substrate related parameters not scaled on purpose. This is very geometry dependent? area_times_m = here->HICUMm*here->HICUMarea; @@ -219,7 +219,7 @@ int hicum_thermal_update(HICUMmodel *inModel, HICUMinstance *inInstance, double cbcpar_scaled = model->HICUMcbcpar * here->HICUMm; ibcxs_scaled = model->HICUMibcxs * here->HICUMm; qavl_scaled = model->HICUMqavl * area_times_m; - //resistances //crth todo + //resistances re_scaled = model->HICUMre / area_times_m; rci0_scaled = model->HICUMrci0 / area_times_m; rbx_scaled = model->HICUMrbx / area_times_m;