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* Fixed the problems of the AUTHORS file not being found by adding its 

directory to the search paths for makeinfo and for texi2dvi in Makefile.am

  *  Fixed the warning caused by @strong{Note:} in ngspice.texti - used the
     @quotation Note style as given in the texinfo user manual section 10.2

  *  Added an @include version.texi in the header of the ngspice.texi file.
     This causes automake to create the necessary files and allow the use of
     @value(VERSION) in the ngspice.texi. The .cvsignore file has been adjusted
     to take account of the generated files.

  *  Used @copying and @insertcopying for the copyright text in ngspice.texi
     and modified the file's structure a little. It now more closely follows the
     simple example given in the texinfo user manual.

  *  Fixed some of the 'overfull' error generated by TeX when processing
     ngspice.texi - many more still present.

  *  removed non-ASCII characters from ngspice.texi. this needed a work-round
     for the degrees symbol - used @math{^o}

  *  Added ngsspice.pdf as an output file of make dist
This commit is contained in:
sjborley 2005-08-14 19:35:56 +00:00
parent 060596f439
commit 5a6f1f74db
4 changed files with 193 additions and 214 deletions
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4
doc/.cvsignore
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@ -2,6 +2,7 @@ Makefile.in
Makefile Makefile
ngspice.info* ngspice.info*
ngspice.ps ngspice.ps
ngspice.pdf
ngspice.vrs ngspice.vrs
ngspice.fns ngspice.fns
ngspice.toc ngspice.toc
@ -15,3 +16,6 @@ ngspice.aux
ngspice.dvi ngspice.dvi
ngspice.log ngspice.log
texinfo.tex texinfo.tex
mdate-sh
stamp-vti
version.texi

25
doc/ChangeLog
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@ -1,3 +1,28 @@
2005-08-14 Steven Borley <steven.borley@virgin.net>
* Fixed the problems of the AUTHORS file not being found by adding its
directory to the search paths for makeinfo and for texi2dvi in Makefile.am
* Fixed the warning caused by @strong{Note:} in ngspice.texti - used the
@quotation Note style as given in the texinfo user manual section 10.2
* Added an @include version.texi in the header of the ngspice.texi file.
This causes automake to create the necessary files and allow the use of
@value(VERSION) in the ngspice.texi. The .cvsignore file has been adjusted
to take account of the generated files.
* Used @copying and @insertcopying for the copyright text in ngspice.texi
and modified the file's structure a little. It now more closely follows the
simple example given in the texinfo user manual.
* Fixed some of the 'overfull' error generated by TeX when processing
ngspice.texi - many more still present.
* removed non-ASCII characters from ngspice.texi. this needed a work-round
for the degrees symbol - used @math{^o}
* Added ngsspice.pdf as an output file of make dist
2001-12-05 Emmanuel Rouat <emmanuel.rouat@wanadoo.fr> 2001-12-05 Emmanuel Rouat <emmanuel.rouat@wanadoo.fr>
* ngspice.texi: changed (most) references of spice3 to ngspice. * ngspice.texi: changed (most) references of spice3 to ngspice.

8
doc/Makefile.am
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@ -1,6 +1,6 @@
## Process this file with automake to produce Makefile.in ## Process this file with automake to produce Makefile.in
EXTRA_DIST = ngspice.ps EXTRA_DIST = ngspice.ps ngspice.pdf
info_TEXINFOS = ngspice.texi info_TEXINFOS = ngspice.texi
@ -10,4 +10,8 @@ DISTCLEANFILES = $CLEANFILES *.ps *.dvi *.info*
MAINTAINERCLEANFILES = $DISTCLEANFILES Makefile.in MAINTAINERCLEANFILES = $DISTCLEANFILES Makefile.in
AM_MAKEINFOFLAGS = -D "top_srcdir .." # This adds the root directory of the ngspice source distribution
# to be included in the search path for includes in the ngspice.texi file
# (which is necessary for the AUTHORS file to be found)
AM_MAKEINFOFLAGS = -I "../"
TEXI2DVI = texi2dvi -I "../"

294
doc/ngspice.texi
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@ -1,15 +1,17 @@
\input texinfo @c -*-texinfo-*- \input texinfo @c -*-texinfo-*-
@c $Id$
@c %**start of header @c %**start of header
@setfilename ngspice.info @setfilename ngspice.info
@include version.texi
@settitle NGSPICE User Manual @settitle NGSPICE User Manual
@setchapternewpage odd @setchapternewpage odd
@c %**end of header @c %**end of header
@ifinfo @c Summary Description and Copyright
This file documents NGSPICE. @copying
Copyright 1996 The Regents of the University of California. Copyright 1996 The Regents of the University of California.
@quotation
Permission to use, copy, modify, and distribute this software and its Permission to use, copy, modify, and distribute this software and its
documentation for educational, research and non-profit purposes, documentation for educational, research and non-profit purposes,
without fee, and without a written agreement is hereby granted, without fee, and without a written agreement is hereby granted,
@ -34,64 +36,37 @@ LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR
A PARTICULAR PURPOSE. THE SOFTWARE PROVIDED HEREUNDER IS ON AN "AS IS" A PARTICULAR PURPOSE. THE SOFTWARE PROVIDED HEREUNDER IS ON AN "AS IS"
BASIS, AND THE UNIVERSITY OF CALIFORNIA HAS NO OBLIGATIONS TO PROVIDE BASIS, AND THE UNIVERSITY OF CALIFORNIA HAS NO OBLIGATIONS TO PROVIDE
MAINTENANCE, SUPPORT, UPDATES, ENHANCEMENTS, OR MODIFICATIONS. MAINTENANCE, SUPPORT, UPDATES, ENHANCEMENTS, OR MODIFICATIONS.
@end ifinfo @end quotation
@end copying
@c This title page illustrates only one of the @c Titlepage, Contents, Copyright and Contents
@c two methods of forming a title page.
@titlepage @titlepage
@title NGSPICE User Manual @title NGSPICE User Manual
@subtitle Describes ngspice-rework15 @subtitle Describes ngspice-rework-@value{VERSION}
@subtitle Draft Version 0.1 @subtitle Draft Version 0.2
@author Many Authors @author Many Authors
@c The following two commands @c The following two commands start the copyright page.
@c start the copyright page.
@page @page
@vskip 0pt plus 1filll @vskip 0pt plus 1filll
Copyright 1996 The Regents of the University of California. @insertcopying
@c Published by ...
Permission to use, copy, modify, and distribute this software and its
documentation for educational, research and non-profit purposes,
without fee, and without a written agreement is hereby granted,
provided that the above copyright notice, this paragraph and the
following three paragraphs appear in all copies.
This software program and documentation are copyrighted by The Regents
of the University of California. The software program and
documentation are supplied "as is", without any accompanying services
from The Regents. The Regents does not warrant that the operation of
the program will be uninterrupted or error-free. The end-user
understands that the program was developed for research purposes and
is advised not to rely exclusively on the program for any reason.
IN NO EVENT SHALL THE UNIVERSITY OF CALIFORNIA BE LIABLE TO ANY PARTY
FOR DIRECT, INDIRECT, SPECIAL, INCIDENTAL, OR CONSEQUENTIAL DAMAGES,
INCLUDING LOST PROFITS, ARISING OUT OF THE USE OF THIS SOFTWARE AND
ITS DOCUMENTATION, EVEN IF THE UNIVERSITY OF CALIFORNIA HAS BEEN
ADVISED OF THE POSSIBILITY OF SUCH DAMAGE. THE UNIVERSITY OF
CALIFORNIA SPECIFICALLY DISCLAIMS ANY WARRANTIES, INCLUDING, BUT NOT
LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR
A PARTICULAR PURPOSE. THE SOFTWARE PROVIDED HEREUNDER IS ON AN "AS IS"
BASIS, AND THE UNIVERSITY OF CALIFORNIA HAS NO OBLIGATIONS TO PROVIDE
MAINTENANCE, SUPPORT, UPDATES, ENHANCEMENTS, OR MODIFICATIONS.
@end titlepage @end titlepage
@c Output the table of contents at the begining
@node Top, Preface, (dir), (dir)
@ifinfo
This document describes the mixed level simulator NGspice
This document applies to version 15
of the program named NGSPICE
@end ifinfo
@contents @contents
@c 'Top' Node and master menu
@ifnottex
@node Top, Preface, (dir), (dir)
@top NGSpice User Manual
This manual describes the mixed level simulator NGspice
and applies to the version called Rework @value{VERSION}.
@insertcopying
@end ifnottex
@menu @menu
* Preface:: Some words about this manual. * Preface:: Some words about this manual.
* Acknowledgements:: Almost all the people who contributed * Acknowledgements:: Almost all the people who contributed
@ -110,14 +85,10 @@ of the program named NGSPICE
interactive frontend. interactive frontend.
* Bibliography:: A small bibliography. * Bibliography:: A small bibliography.
* Example Circuits:: Some examples. * Example Circuits:: Some examples.
* Model and Device Parameters:: Equations that makes the models and * Model and Device Parameters:: Equations that makes the models and parameters.
parameters.
@end menu @end menu
@c @node First Chapter, Second Chapter, top, top @c Body of the Document
@c @comment node-name, next, previous, up
@c @chapter First Chapter
@c @cindex Index entry for First Chapter
@node Preface, Acknowledgements, Top, Top @node Preface, Acknowledgements, Top, Top
@comment node-name, next, previous, up @comment node-name, next, previous, up
@ -172,7 +143,8 @@ within the limitations of the tools.
@chapter Acknowledgements @chapter Acknowledgements
@c Include the AUTHORS file from the top directory @c Include the AUTHORS file from the top directory
@include @value{top_srcdir}/AUTHORS @c include @value{top_srcdir}/AUTHORS
@include AUTHORS
@node Release Notes, Introduction, Acknowledgements, Top @node Release Notes, Introduction, Acknowledgements, Top
@comment node-name, next, previous, up @comment node-name, next, previous, up
@ -834,7 +806,7 @@ Several files have been edited, all above @file{configure.in} to comply with
the autotools from CYGWIN. Other @file{*.c} have been edited and patched with the autotools from CYGWIN. Other @file{*.c} have been edited and patched with
@code{#ifdef __MINGW32__ ... #endif}. Compared to the CYGWIN port for @code{#ifdef __MINGW32__ ... #endif}. Compared to the CYGWIN port for
WINDOWS only minor modifications have been done. Still the WINDOWS port WINDOWS only minor modifications have been done. Still the WINDOWS port
from Wolfgang Mües is used. The resulting source code should still be from Wolfgang M@:ues is used. The resulting source code should still be
compatible to LINUX or UNIX porting (including autotools). I have however compatible to LINUX or UNIX porting (including autotools). I have however
not tested that. not tested that.
@ -846,8 +818,8 @@ This is how I made ngspice with CYGWIN and external MINGW32 with the attached
patches applied to ng-spice-rework-14: patches applied to ng-spice-rework-14:
according to according to
@url{http://www.geocrawler.com/lists/3/SourceForge/6013/0/7321042/} @url{http://www.geocrawler.com/@/lists/3/@/SourceForge/@/6013/0/@/7321042/}
@c note - the '@/' allows TeX to insert a line break if necessary
CYGWIN is installed in @file{C:\cygwin}. CYGWIN is installed in @file{C:\cygwin}.
@ -859,7 +831,8 @@ $ export PATH="/cygdrive/g/gcc_mingw/bin:$PATH"
$ automake $ automake
$ autoconf $ autoconf
$ rm config.cache $ rm config.cache
$ ./configure --with-windows --prefix="/cygdrive/g/gcc_mingw/bin" $ ./configure --with-windows \
--prefix="/cygdrive/g/gcc_mingw/bin"
$ make clean $ make clean
$ make 2> make.err $ make 2> make.err
@ -1104,7 +1077,7 @@ stationary gaussian process.
Temperature, in NGSPICE, is a property associated to the entire circuit, Temperature, in NGSPICE, is a property associated to the entire circuit,
rather an analysis option. Circuit temperature has a default (nominal) rather an analysis option. Circuit temperature has a default (nominal)
value of 27°C (300.15 K) that can be changed using the @option{TNOM} value of 27@math{^o}C (300.15 K) that can be changed using the @option{TNOM}
option in an @code{.OPTION} control line. All analyses are, thus, option in an @code{.OPTION} control line. All analyses are, thus,
performed at circuit temperature, and if you want to simulate circuit performed at circuit temperature, and if you want to simulate circuit
behaviour at different temperatures you should prepare a netlist behaviour at different temperatures you should prepare a netlist
@ -1971,26 +1944,17 @@ The resistor model consists of process-related device data that allow
the resistance to be calculated from geometric information and to be the resistance to be calculated from geometric information and to be
corrected for temperature. The parameters available are: corrected for temperature. The parameters available are:
@multitable @columnfractions .15 .4 .2 .1 .1 @multitable {NARROW} {parameter measurement temperature} {ohm/@math{^o}C@math{^2}} {default} {example}
@item name @tab parameter @tab units @tab default @tab example @item name @tab parameter @tab units @tab default @tab example
@item TC1 @tab first order temperature coeff. @item TC1 @tab first order temperature coeff. @tab ohm/@math{^o}C @tab 0.0
@tab Ohm/°C @tab 0.0 @item TC2 @tab second order temperature coeff. @tab ohm/@math{^o}C@math{^2} @tab 0.0
@item TC2 @tab second order temperature coeff. @item RSH @tab sheet resistance @tab ohm/[] @tab - @tab 50
@tab Ohm/°C@math{^2} @tab 0.0 @item DEFW @tab default width @tab meters @tab 1e-6 @tab 2e-6
@item RSH @tab sheet resistance @item NARROW @tab narrowing due to side etching @tab meters @tab 0.0 @tab 1e-7
@tab Ohm/[] @tab - @tab 50 @item SHORT @tab shortening due to side etching @tab meters @tab 0.0 @tab 1e-7
@item DEFW @tab default width @item TNOM @tab parameter measurement temperature @tab @math{^o}C @tab 27 @tab 50
@tab meters @tab 1e-6 @tab 2e-6 @item KF @tab flicker noise coefficient @tab - @tab 0.0 @tab 1e-25
@item NARROW @tab narrowing due to side etching @item AF @tab flicker noise exponent @tab - @tab 0.0 @tab 1.0
@tab meters @tab 0.0 @tab 1e-7
@item SHORT @tab shortening due to side etching
@tab meters @tab 0.0 @tab 1e-7
@item TNOM @tab parameter measurement temperature
@tab °C @tab 27 @tab 50
@item KF @tab flicker noise coefficient
@tab - @tab 0.0 @tab 1e-25
@item AF @tab flicker noise exponent
@tab - @tab 0.0 @tab 1.0
@end multitable @end multitable
@ -2205,32 +2169,20 @@ and set the capacitance in the @command{.model} line (@pxref{Capacitors}).
The capacitor model contains process information that may be used to The capacitor model contains process information that may be used to
compute the capacitance from strictly geometric information. compute the capacitance from strictly geometric information.
@multitable @columnfractions .15 .4 .2 .1 .1 @multitable {NARROW} {parameter measurement temperature} {F/@math{^o}C@math{^2}} {default} {example}
@item name @tab parameter @tab units @tab default @tab example @item name @tab parameter @tab units @tab default @tab example
@item CAP @tab model capacitance @item CAP @tab model capacitance @tab F @tab 0.0 @tab 1e-6
@tab F @tab 0.0 @tab 1e-6 @item CJ @tab junction bottom capacitance @tab F/meters@math{^2} @tab - @tab 5e-5
@item CJ @tab junction bottom capacitance @item CJSW @tab junction sidewall capacitance @tab F/meters @tab - @tab 2e-11
@tab F/meters@math{^2} @tab - @tab 5e-5 @item DEFW @tab default device width @tab meters @tab 1e-6 @tab 2e-6
@item CJSW @tab junction sidewall capacitance @item DEFL @tab default device length @tab meters @tab 0.0 @tab 1e-6
@tab F/meters @tab - @tab 2e-11 @item NARROW @tab narrowing due to side etching @tab meters @tab 0.0 @tab 1e-7
@item DEFW @tab default device width @item SHORT @tab shorting due to side etching @tab meters @tab 0.0 @tab 1e-7
@tab meters @tab 1e-6 @tab 2e-6 @item TC1 @tab first order temperature coeff. @tab F/@math{^o}C @tab 0.0 @tab 0.001
@item DEFL @tab default device length @item TC2 @tab second order temperature coeff. @tab F/@math{^o}C@math{^2} @tab 0.0 @tab 0.0001
@tab meters @tab 0.0 @tab 1e-6 @item TNOM @tab parameter measurement temperature @tab @math{^o}C @tab 27 @tab 50
@item NARROW @tab narrowing due to side etching @item DI @tab relative dielectric constant @tab F/m @tab 0.0 @tab 1
@tab meters @tab 0.0 @tab 1e-7 @item THICK @tab insulator thickness @tab meters @tab 0.0 @tab 1e-9
@item SHORT @tab shorting due to side etching
@tab meters @tab 0.0 @tab 1e-7
@item TC1 @tab first order temperature coeff.
@tab F/°C @tab 0.0 @tab 0.001
@item TC2 @tab second order temperature coeff.
@tab F/°C@math{^2} @tab 0.0 @tab 0.0001
@item TNOM @tab parameter measurement temperature
@tab °C @tab 27 @tab 50
@item DI @tab relative dielectric constant
@tab F/m @tab 0.0 @tab 1
@item THICK @tab insulator thickness
@tab meters @tab 0.0 @tab 1e-9
@end multitable @end multitable
@ -2451,11 +2403,11 @@ magnetic permeability.
@item LENGTH @tab Length @item LENGTH @tab Length
@tab meters @tab 0.0 @tab 1e-2 @tab meters @tab 0.0 @tab 1e-2
@item TC1 @tab first order temperature coeff. @item TC1 @tab first order temperature coeff.
@tab F/°C @tab 0.0 @tab 0.001 @tab F/@math{^o}C @tab 0.0 @tab 0.001
@item TC2 @tab second order temperature coeff. @item TC2 @tab second order temperature coeff.
@tab F/°C@math{^2} @tab 0.0 @tab 0.0001 @tab F/@math{^o}C@math{^2} @tab 0.0 @tab 0.0001
@item TNOM @tab parameter measurement temperature @item TNOM @tab parameter measurement temperature
@tab °C @tab 27 @tab 50 @tab @math{^o}C @tab 27 @tab 50
@item NT @tab number of turns @item NT @tab number of turns
@tab - @tab 0.0 @tab 10 @tab - @tab 0.0 @tab 10
@item MU @tab relative magnetic permeability @item MU @tab relative magnetic permeability
@ -3627,13 +3579,13 @@ and @option{IBV} (both of which are positive numbers).
@item EG @tab activation energy @tab eV @tab 1.11 @tab 1.11 Si @item EG @tab activation energy @tab eV @tab 1.11 @tab 1.11 Si
@item @tab @tab @tab @tab 0.69 Sbd @item @tab @tab @tab @tab 0.69 Sbd
@item @tab @tab @tab @tab 0.67 Ge @item @tab @tab @tab @tab 0.67 Ge
@item TM1 @tab 1st order tempco for MJ @tab 1/°C @tab 0.0 @tab - @item TM1 @tab 1st order tempco for MJ @tab 1/@math{^o}C @tab 0.0 @tab -
@item TM2 @tab 2nd order tempco for MJ @tab 1/°C^2 @tab 0.0 @tab - @item TM2 @tab 2nd order tempco for MJ @tab 1/@math{^o}C@math{^2} @tab 0.0 @tab -
@item TNOM @tab parameter measurement temperature @tab C @tab 27 @tab 50 @item TNOM @tab parameter measurement temperature @tab C @tab 27 @tab 50
@item TRS @tab 1st order tempco for RS @tab 1/°C @tab 0.0 @tab - @item TRS @tab 1st order tempco for RS @tab 1/@math{^o}C @tab 0.0 @tab -
@item TRS2 @tab 2nd order tempco for RS @tab 1/°C^2 @tab 0.0 @tab - @item TRS2 @tab 2nd order tempco for RS @tab 1/@math{^o}C@math{^2} @tab 0.0 @tab -
@item TTT1 @tab 1st order tempco for TT @tab 1/°C @tab 0.0 @tab - @item TTT1 @tab 1st order tempco for TT @tab 1/@math{^o}C @tab 0.0 @tab -
@item TTT2 @tab 2nd order tempco for TT @tab 1/°C^2 @tab 0.0 @tab - @item TTT2 @tab 2nd order tempco for TT @tab 1/@math{^o}C@math{^2} @tab 0.0 @tab -
@item XTI @tab saturation-current temp. exp @tab - @tab 3.0 @tab 3.0 pn @item XTI @tab saturation-current temp. exp @tab - @tab 3.0 @tab 3.0 pn
@item @tab @tab @tab @tab 2.0 Sbd @item @tab @tab @tab @tab 2.0 Sbd
@end multitable @end multitable
@ -4201,23 +4153,23 @@ internal base node @tab - @tab 1
@item AF @tab flicker-noise exponent @tab - @tab 1 @item AF @tab flicker-noise exponent @tab - @tab 1
@item FC @tab coefficient for forward-bias depletion capacitance formula @item FC @tab coefficient for forward-bias depletion capacitance formula
@tab - @tab 0.5 @tab o @tab - @tab 0.5 @tab o
@item TNOM @tab Parameter measurement temperature @tab °C @tab 27 @tab 50 @item TNOM @tab Parameter measurement temperature @tab @math{^o}C @tab 27 @tab 50
@item TRE1 @tab 1st order temperature coefficient for RE @item TRE1 @tab 1st order temperature coefficient for RE
(level 2 only) @tab 1/°C @tab 0.0 @tab 1e-3 (level 2 only) @tab 1/@math{^o}C @tab 0.0 @tab 1e-3
@item TRE2 @tab 2nd order temperature coefficient for RE @item TRE2 @tab 2nd order temperature coefficient for RE
(level 2 only) @tab 1/°C^2 @tab 0.0 @tab 1e-5 (level 2 only) @tab 1/@math{^o}C@math{^2} @tab 0.0 @tab 1e-5
@item TRC1 @tab 1st order temperature coefficient for RC @item TRC1 @tab 1st order temperature coefficient for RC
(level 2 only )@tab 1/°C @tab 0.0 @tab 1e-3 (level 2 only )@tab 1/@math{^o}C @tab 0.0 @tab 1e-3
@item TRC2 @tab 2nd order temperature coefficient for RC @item TRC2 @tab 2nd order temperature coefficient for RC
(level 2 only) @tab 1/°C^2 @tab 0.0 @tab 1e-5 (level 2 only) @tab 1/@math{^o}C@math{^2} @tab 0.0 @tab 1e-5
@item TRB1 @tab 1st order temperature coefficient for RB @item TRB1 @tab 1st order temperature coefficient for RB
(level 2 only) @tab 1/°C @tab 0.0 @tab 1e-3 (level 2 only) @tab 1/@math{^o}C @tab 0.0 @tab 1e-3
@item TRB2 @tab 2nd order temperature coefficient for RB @item TRB2 @tab 2nd order temperature coefficient for RB
(level 2 only) @tab 1/°C^2 @tab 0.0 @tab 1e-5 (level 2 only) @tab 1/@math{^o}C@math{^2} @tab 0.0 @tab 1e-5
@item TRB1 @tab 1st order temperature coefficient for RBM @item TRB1 @tab 1st order temperature coefficient for RBM
(level 2 only) @tab 1/°C @tab TRB1 @tab 1e-3 (level 2 only) @tab 1/@math{^o}C @tab TRB1 @tab 1e-3
@item TRB2 @tab 2nd order temperature coefficient for RBM @item TRB2 @tab 2nd order temperature coefficient for RBM
(level 2 only) @tab 1/°C^2 @tab TRB2 @tab 1e-5 (level 2 only) @tab 1/@math{^o}C@math{^2} @tab TRB2 @tab 1e-5
@end multitable @end multitable
@ -4294,7 +4246,7 @@ For details, see [9].
@item FC @tab coefficient for forward-bias depletion capacitance formula @item FC @tab coefficient for forward-bias depletion capacitance formula
@tab - @tab 0.5 @tab - @tab 0.5
@item TNOM @tab parameter measurement temperature @item TNOM @tab parameter measurement temperature
@tab °C @tab 27 @tab 50 @tab @math{^o}C @tab 27 @tab 50
@end multitable @end multitable
@ -4520,7 +4472,7 @@ NGSPICE level 1, 2, 3 and 6 parameters:
@item KAPPA @tab saturation field factor (MOS3 only) @item KAPPA @tab saturation field factor (MOS3 only)
@tab - @tab 0.2 @tab 0.5 @tab - @tab 0.2 @tab 0.5
@item TNOM @tab parameter measurement temperature @item TNOM @tab parameter measurement temperature
@tab °C @tab 27 @tab 50 @tab @math{^o}C @tab 27 @tab 50
@end multitable @end multitable
@ -4601,29 +4553,29 @@ For more information on BSIM2, see reference [5].
@item name @tab parameter @tab units @tab l/w @item name @tab parameter @tab units @tab l/w
@item VFB @tab flat-band voltage @tab V @tab * @item VFB @tab flat-band voltage @tab V @tab *
@item PHI @tab surface inversion potential @tab V @tab * @item PHI @tab surface inversion potential @tab V @tab *
@item K1 @tab body effect coefficient @tab V^(1/2) @tab * @item K1 @tab body effect coefficient @tab V@math{^(1/2)} @tab *
@item K2 @tab drain/source depletion charge-sharing coefficient @tab - @tab * @item K2 @tab drain/source depletion charge-sharing coefficient @tab - @tab *
@item ETA @tab zero-bias drain-induced barrier-lowering coefficient @tab - @tab * @item ETA @tab zero-bias drain-induced barrier-lowering coefficient @tab - @tab *
@item MUZ @tab zero-bias mobility @tab cm^(2)/V-s @tab @item MUZ @tab zero-bias mobility @tab cm@math{^2}/V-s @tab
@item DL @tab shortening of channel @tab Mm @tab @item DL @tab shortening of channel @tab Mm @tab
@item DW @tab narrowing of channel @tab Mm @tab @item DW @tab narrowing of channel @tab Mm @tab
@item U0 @tab zero-bias transverse-field mobility degradation @item U0 @tab zero-bias transverse-field mobility degradation
coefficient @tab V^(-1) @tab * coefficient @tab V@math{^-1} @tab *
@item U1 @tab zero-bias velocity saturation coefficient @tab Mm/V @tab * @item U1 @tab zero-bias velocity saturation coefficient @tab Mm/V @tab *
@item X2MZ @tab sens. of mobility to substrate bias at V_ds=0 @tab cm^(2)/V-s @tab * @item X2MZ @tab sens. of mobility to substrate bias at V_ds=0 @tab cm@math{^2}/V-s @tab *
@item X2E @tab sens. of drain-induced barrier lowering effect to @item X2E @tab sens. of drain-induced barrier lowering effect to
substrate bias @tab V^(-1) @tab * substrate bias @tab V@math{^-1} @tab *
@item X3E @tab sens. of drain-induced barrier lowering effect to @item X3E @tab sens. of drain-induced barrier lowering effect to
drain bias at V_ds=V_dd @tab V^(-1) @tab * drain bias at V_ds=V_dd @tab V@math{^-1} @tab *
@item X2U0 @tab sens. of transverse field mobility degradation @item X2U0 @tab sens. of transverse field mobility degradation
effect to substrate bias @tab V^(-2) @tab * effect to substrate bias @tab V@math{^2} @tab *
@item X2U1 @tab sens. of velocity saturation effect to substrate @item X2U1 @tab sens. of velocity saturation effect to substrate
bias @tab MmV^(-2) @tab * bias @tab MmV@math{^2} @tab *
@item MUS @tab mobility at zero substrate bias and at V_ds=V_dd @tab cm^2/V^2-s @tab @item MUS @tab mobility at zero substrate bias and at V_ds=V_dd @tab cm@math{^2}/V@math{^2}-s @tab
@item X2MS @tab sens. of mobility to substrate bias at V_ds=V_dd @tab cm^2/V^2-s @tab * @item X2MS @tab sens. of mobility to substrate bias at V_ds=V_dd @tab cm@math{^2}/V@math{^2}-s @tab *
@item X3MS @tab sens. of mobility to drain bias at V_ds=V_dd @tab cm^2/V^2-s @tab * @item X3MS @tab sens. of mobility to drain bias at V_ds=V_dd @tab cm@math{^2}/V@math{^2}-s @tab *
@item X3U1 @tab sens. of velocity saturation effect on drain bias @item X3U1 @tab sens. of velocity saturation effect on drain bias
at V_ds=V_dd @tab MmV^(-2) @tab * at V_ds=V_dd @tab MmV@math{^2} @tab *
@item TOX @tab gate oxide thickness @tab Mm @tab @item TOX @tab gate oxide thickness @tab Mm @tab
@item TEMP @tab temperature at which parameters were measured @tab C @tab @item TEMP @tab temperature at which parameters were measured @tab C @tab
@item VDD @tab measurement bias range @tab V @tab @item VDD @tab measurement bias range @tab V @tab
@ -4638,14 +4590,14 @@ For more information on BSIM2, see reference [5].
@item NB @tab sens. of subthreshold slope to substrate bias @tab - @tab * @item NB @tab sens. of subthreshold slope to substrate bias @tab - @tab *
@item ND @tab sens. of subthreshold slope to drain bias @tab - @tab * @item ND @tab sens. of subthreshold slope to drain bias @tab - @tab *
@item RSH @tab drain and source diffusion sheet resistance @tab Z/[] @tab @item RSH @tab drain and source diffusion sheet resistance @tab Z/[] @tab
@item JS @tab source drain junction current density @tab A/m^2 @tab @item JS @tab source drain junction current density @tab A/m@math{^2} @tab
@item PB @tab built in potential of source drain junction @tab V @tab @item PB @tab built in potential of source drain junction @tab V @tab
@item MJ @tab Grading coefficient of source drain junction @tab - @tab @item MJ @tab Grading coefficient of source drain junction @tab - @tab
@item BSW @tab built in potential of source, drain junction @item BSW @tab built in potential of source, drain junction
sidewall @tab V @tab sidewall @tab V @tab
@item MJSW @tab grading coefficient of source drain junction @item MJSW @tab grading coefficient of source drain junction
sidewall @tab - @tab sidewall @tab - @tab
@item CJ @tab Source drain junction capacitance per unit area @tab F/m^2 @tab @item CJ @tab Source drain junction capacitance per unit area @tab F/m@math{^2} @tab
@item CJSW @tab source drain junction sidewall capacitance per @item CJSW @tab source drain junction sidewall capacitance per
unit length @tab F/m @tab unit length @tab F/m @tab
@item WDF @tab source drain junction default width @tab m @tab @item WDF @tab source drain junction default width @tab m @tab
@ -4733,28 +4685,23 @@ Two ohmic resistances, RD and RS, are included. Charge storage is
modeled by total gate charge as a function of gate-drain and gate-source modeled by total gate charge as a function of gate-drain and gate-source
voltages and is defined by the parameters CGS, CGD, and PB. voltages and is defined by the parameters CGS, CGD, and PB.
@multitable {LAMBDA} {channel-length modulation parameter} {units} {default} {example} {area}
@example @item name @tab parameter @tab units @tab default @tab example @tab area
name parameter units default example area @item VTO @tab pinch-off voltage @tab V @tab -2.0 @tab -2.0
@item BETA @tab transconductance parameter @tab A/V@math{^2} @tab 1.0e-4 @tab 1.0e-3 @tab *
1 VTO pinch-off voltage V -2.0 -2.0 @item B @tab doping tail extending parameter @tab 1/V @tab 0.3 @tab 0.3 @tab *
2 @item ALPHA @tab saturation voltage parameter @tab 1/V @tab 2 @tab 2 @tab *
2 BETA transconductance parameter A/V 1.0e-4 1.0e-3 * @item LAMBDA @tab channel-length modulation parameter @tab 1/V @tab 0 @tab 1.0e-4
3 B doping tail extending parameter 1/V 0.3 0.3 * @item RD @tab drain ohmic resistance @tab Z @tab 0 @tab 100 @tab *
4 ALPHA saturation voltage parameter 1/V 2 2 * @item RS @tab source ohmic resistance @tab Z @tab 0 @tab 100 @tab *
5 LAMBDA channel-length modulation @item CGS @tab zero-bias G-S junction capacitance @tab F @tab 0 @tab 5pF @tab *
parameter 1/V 0 1.0e-4 @item CGD @tab zero-bias G-D junction capacitance @tab F @tab 0 @tab 1pF @tab *
6 RD drain ohmic resistance Z 0 100 * @item PB @tab gate junction potential @tab V @tab 1 @tab 0.6
7 RS source ohmic resistance Z 0 100 * @item KF @tab flicker noise coefficient @tab - @tab 0
8 CGS zero-bias G-S junction capacitance F 0 5pF * @item AF @tab flicker noise exponent @tab - @tab 1
9 CGD zero-bias G-D junction capacitance F 0 1pF * @item FC @tab coefficient for forward-bias
10 PB gate junction potential V 1 0.6 depletion capacitance formula @tab - @tab 0.5
11 KF flicker noise coefficient - 0 @end multitable
12 AF flicker noise exponent - 1
13 FC coefficient for forward-bias - 0.5
depletion capacitance formula
@end example
@node Analyses and Output Control, Interactive Interpreter, Circuit Elements and Models, Top @node Analyses and Output Control, Interactive Interpreter, Circuit Elements and Models, Top
@ -5685,13 +5632,11 @@ the appropriate documentation on the X Window System for more details.
Command Synopsis Command Synopsis
@example @example
ngspice [ -n ] [ -t term ] [ -r rawfile] [ -b ] [ -i ] [ input file ... ] ngspice [ -n ] [ -t term ] [ -r rawfile] [ -b ] [ -i ] [ input file ... ]
nutmeg [ - ] [ -n ] [ -t term ] [ datafile ... ] nutmeg [ - ] [ -n ] [ -t term ] [ datafile ... ]
@end example @end example
Options are: Options are:
@table @code @table @code
@ -5982,7 +5927,7 @@ The square root of -1
@item kelvin @item kelvin
Absolute 0 in Centigrade (-273.15 °C) Absolute 0 in Centigrade (-273.15 @math{^o}C)
@item echarge @item echarge
@ -7151,10 +7096,11 @@ Linux janus.wayout.net 2.4.20 #1 SMP Tue Jun 10 18:58:26 CEST 2003 i686
ngspice 2 -> ngspice 2 ->
@end example @end example
@strong{Note:} This command may not be available on your environment, if @quotation Note
This command may not be available on your environment, if
it is not available, please send analogous information when submitting it is not available, please send analogous information when submitting
bug reports. bug reports.
@end quotation
@node Tf, Trace, Stop, Commands @node Tf, Trace, Stop, Commands
@subsection Tf*: Run a Transfer Function analysis @subsection Tf*: Run a Transfer Function analysis
@ -8757,28 +8703,28 @@ and model, but are provided as a quick reference guide.
--------------------------------------------------------------------------- ---------------------------------------------------------------------------
| BSIM1 - model input-output parameters - continued | | BSIM1 - model input-output parameters - continued |
|--------------------------------------------------------------------------+ |-----------------------------------------------------------------------+
|tox Gate oxide thickness in um | |tox Gate oxide thickness in um |
|temp Temperature in degree Celsius | |temp Temperature in degree Celsius |
|vdd Supply voltage to specify mus | |vdd Supply voltage to specify mus |
|cgso Gate source overlap capacitance per unit channel width(m) | |cgso Gate source overlap capacitance per unit channel width(m) |
--------------------------------------------------------------------------- ------------------------------------------------------------------------
|cgdo Gate drain overlap capacitance per unit channel width(m) | |cgdo Gate drain overlap capacitance per unit channel width(m) |
|cgbo Gate bulk overlap capacitance per unit channel length(m) | |cgbo Gate bulk overlap capacitance per unit channel length(m) |
|xpart Flag for channel charge partitioning | |xpart Flag for channel charge partitioning |
|rsh Source drain diffusion sheet resistance in ohm per square | |rsh Source drain diffusion sheet resistance in ohm per square |
|--------------------------------------------------------------------------+ |-----------------------------------------------------------------------+
|js Source drain junction saturation current per unit area | |js Source drain junction saturation current per unit area |
|pb Source drain junction built in potential | |pb Source drain junction built in potential |
mj Source drain bottom junction capacitance grading coefficient |mj Source drain bottom junction capacitance grading coefficient
|pbsw Source drain side junction capacitance built in potential | |pbsw Source drain side junction capacitance built in potential |
--------------------------------------------------------------------------- ------------------------------------------------------------------------
|mjsw Source drain side junction capacitance grading coefficient | |mjsw Source drain side junction capacitance grading coefficient |
|cj Source drain bottom junction capacitance per unit area | |cj Source drain bottom junction capacitance per unit area |
|cjsw Source drain side junction capacitance per unit area | |cjsw Source drain side junction capacitance per unit area |
|wdf Default width of source drain diffusion in um | |wdf Default width of source drain diffusion in um |
|dell Length reduction of source drain diffusion | |dell Length reduction of source drain diffusion |
--------------------------------------------------------------------------- ------------------------------------------------------------------------
@end example @end example