diff --git a/doc/.cvsignore b/doc/.cvsignore index 83c6e09e5..61234b20e 100644 --- a/doc/.cvsignore +++ b/doc/.cvsignore @@ -2,6 +2,7 @@ Makefile.in Makefile ngspice.info* ngspice.ps +ngspice.pdf ngspice.vrs ngspice.fns ngspice.toc @@ -15,3 +16,6 @@ ngspice.aux ngspice.dvi ngspice.log texinfo.tex +mdate-sh +stamp-vti +version.texi diff --git a/doc/ChangeLog b/doc/ChangeLog index b79ae6101..3a2a129e3 100644 --- a/doc/ChangeLog +++ b/doc/ChangeLog @@ -1,3 +1,28 @@ +2005-08-14 Steven Borley + + * Fixed the problems of the AUTHORS file not being found by adding its + directory to the search paths for makeinfo and for texi2dvi in Makefile.am + + * Fixed the warning caused by @strong{Note:} in ngspice.texti - used the + @quotation Note style as given in the texinfo user manual section 10.2 + + * Added an @include version.texi in the header of the ngspice.texi file. + This causes automake to create the necessary files and allow the use of + @value(VERSION) in the ngspice.texi. The .cvsignore file has been adjusted + to take account of the generated files. + + * Used @copying and @insertcopying for the copyright text in ngspice.texi + and modified the file's structure a little. It now more closely follows the + simple example given in the texinfo user manual. + + * Fixed some of the 'overfull' error generated by TeX when processing + ngspice.texi - many more still present. + + * removed non-ASCII characters from ngspice.texi. this needed a work-round + for the degrees symbol - used @math{^o} + + * Added ngsspice.pdf as an output file of make dist + 2001-12-05 Emmanuel Rouat * ngspice.texi: changed (most) references of spice3 to ngspice. diff --git a/doc/Makefile.am b/doc/Makefile.am index 4bbe20a5c..6eb7cd3aa 100644 --- a/doc/Makefile.am +++ b/doc/Makefile.am @@ -1,6 +1,6 @@ ## Process this file with automake to produce Makefile.in -EXTRA_DIST = ngspice.ps +EXTRA_DIST = ngspice.ps ngspice.pdf info_TEXINFOS = ngspice.texi @@ -10,4 +10,8 @@ DISTCLEANFILES = $CLEANFILES *.ps *.dvi *.info* MAINTAINERCLEANFILES = $DISTCLEANFILES Makefile.in -AM_MAKEINFOFLAGS = -D "top_srcdir .." +# This adds the root directory of the ngspice source distribution +# to be included in the search path for includes in the ngspice.texi file +# (which is necessary for the AUTHORS file to be found) +AM_MAKEINFOFLAGS = -I "../" +TEXI2DVI = texi2dvi -I "../" diff --git a/doc/ngspice.texi b/doc/ngspice.texi index 6668cb957..1a2ebcc87 100644 --- a/doc/ngspice.texi +++ b/doc/ngspice.texi @@ -1,15 +1,17 @@ \input texinfo @c -*-texinfo-*- +@c $Id$ @c %**start of header @setfilename ngspice.info +@include version.texi @settitle NGSPICE User Manual @setchapternewpage odd @c %**end of header -@ifinfo -This file documents NGSPICE. - +@c Summary Description and Copyright +@copying Copyright 1996 The Regents of the University of California. +@quotation Permission to use, copy, modify, and distribute this software and its documentation for educational, research and non-profit purposes, without fee, and without a written agreement is hereby granted, @@ -34,90 +36,59 @@ LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE. THE SOFTWARE PROVIDED HEREUNDER IS ON AN "AS IS" BASIS, AND THE UNIVERSITY OF CALIFORNIA HAS NO OBLIGATIONS TO PROVIDE MAINTENANCE, SUPPORT, UPDATES, ENHANCEMENTS, OR MODIFICATIONS. -@end ifinfo +@end quotation +@end copying -@c This title page illustrates only one of the -@c two methods of forming a title page. +@c Titlepage, Contents, Copyright and Contents @titlepage @title NGSPICE User Manual -@subtitle Describes ngspice-rework15 -@subtitle Draft Version 0.1 +@subtitle Describes ngspice-rework-@value{VERSION} +@subtitle Draft Version 0.2 @author Many Authors -@c The following two commands -@c start the copyright page. +@c The following two commands start the copyright page. @page @vskip 0pt plus 1filll -Copyright 1996 The Regents of the University of California. - -@c Published by ... - -Permission to use, copy, modify, and distribute this software and its -documentation for educational, research and non-profit purposes, -without fee, and without a written agreement is hereby granted, -provided that the above copyright notice, this paragraph and the -following three paragraphs appear in all copies. - -This software program and documentation are copyrighted by The Regents -of the University of California. The software program and -documentation are supplied "as is", without any accompanying services -from The Regents. The Regents does not warrant that the operation of -the program will be uninterrupted or error-free. The end-user -understands that the program was developed for research purposes and -is advised not to rely exclusively on the program for any reason. - -IN NO EVENT SHALL THE UNIVERSITY OF CALIFORNIA BE LIABLE TO ANY PARTY -FOR DIRECT, INDIRECT, SPECIAL, INCIDENTAL, OR CONSEQUENTIAL DAMAGES, -INCLUDING LOST PROFITS, ARISING OUT OF THE USE OF THIS SOFTWARE AND -ITS DOCUMENTATION, EVEN IF THE UNIVERSITY OF CALIFORNIA HAS BEEN -ADVISED OF THE POSSIBILITY OF SUCH DAMAGE. THE UNIVERSITY OF -CALIFORNIA SPECIFICALLY DISCLAIMS ANY WARRANTIES, INCLUDING, BUT NOT -LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR -A PARTICULAR PURPOSE. THE SOFTWARE PROVIDED HEREUNDER IS ON AN "AS IS" -BASIS, AND THE UNIVERSITY OF CALIFORNIA HAS NO OBLIGATIONS TO PROVIDE -MAINTENANCE, SUPPORT, UPDATES, ENHANCEMENTS, OR MODIFICATIONS. +@insertcopying @end titlepage - - -@node Top, Preface, (dir), (dir) - -@ifinfo -This document describes the mixed level simulator NGspice - -This document applies to version 15 -of the program named NGSPICE -@end ifinfo - +@c Output the table of contents at the begining @contents +@c 'Top' Node and master menu + +@ifnottex +@node Top, Preface, (dir), (dir) +@top NGSpice User Manual +This manual describes the mixed level simulator NGspice +and applies to the version called Rework @value{VERSION}. + +@insertcopying +@end ifnottex + @menu -* Preface:: Some words about this manual. -* Acknowledgements:: Almost all the people who contributed - to NGSPICE development. -* Release Notes:: Release notes for the NGSPICE simulator -* Introduction:: Description of NGSPICE. Try to answer - the question: What NGSPICE is ? -* NGSPICE Compilation:: How to compile NGSPICE. -* Supported Analyses:: Describes supported analyses and introduces - some convergence issues. -* Circuit Description:: How to input a circuit to the simulator. -* Circuit Elements and Models:: Description and use of the devices models - built into NGSPICE. -* Analyses and Output Control:: How to run analyses and check the results. -* Interactive Interpreter:: The commands recognized by the NGSPICE - interactive frontend. -* Bibliography:: A small bibliography. -* Example Circuits:: Some examples. -* Model and Device Parameters:: Equations that makes the models and - parameters. +* Preface:: Some words about this manual. +* Acknowledgements:: Almost all the people who contributed + to NGSPICE development. +* Release Notes:: Release notes for the NGSPICE simulator +* Introduction:: Description of NGSPICE. Try to answer + the question: What NGSPICE is ? +* NGSPICE Compilation:: How to compile NGSPICE. +* Supported Analyses:: Describes supported analyses and introduces + some convergence issues. +* Circuit Description:: How to input a circuit to the simulator. +* Circuit Elements and Models:: Description and use of the devices models + built into NGSPICE. +* Analyses and Output Control:: How to run analyses and check the results. +* Interactive Interpreter:: The commands recognized by the NGSPICE + interactive frontend. +* Bibliography:: A small bibliography. +* Example Circuits:: Some examples. +* Model and Device Parameters:: Equations that makes the models and parameters. @end menu -@c @node First Chapter, Second Chapter, top, top -@c @comment node-name, next, previous, up -@c @chapter First Chapter -@c @cindex Index entry for First Chapter +@c Body of the Document @node Preface, Acknowledgements, Top, Top @comment node-name, next, previous, up @@ -172,7 +143,8 @@ within the limitations of the tools. @chapter Acknowledgements @c Include the AUTHORS file from the top directory -@include @value{top_srcdir}/AUTHORS +@c include @value{top_srcdir}/AUTHORS +@include AUTHORS @node Release Notes, Introduction, Acknowledgements, Top @comment node-name, next, previous, up @@ -834,7 +806,7 @@ Several files have been edited, all above @file{configure.in} to comply with the autotools from CYGWIN. Other @file{*.c} have been edited and patched with @code{#ifdef __MINGW32__ ... #endif}. Compared to the CYGWIN port for WINDOWS only minor modifications have been done. Still the WINDOWS port -from Wolfgang Mües is used. The resulting source code should still be +from Wolfgang M@:ues is used. The resulting source code should still be compatible to LINUX or UNIX porting (including autotools). I have however not tested that. @@ -846,8 +818,8 @@ This is how I made ngspice with CYGWIN and external MINGW32 with the attached patches applied to ng-spice-rework-14: according to -@url{http://www.geocrawler.com/lists/3/SourceForge/6013/0/7321042/} - +@url{http://www.geocrawler.com/@/lists/3/@/SourceForge/@/6013/0/@/7321042/} +@c note - the '@/' allows TeX to insert a line break if necessary CYGWIN is installed in @file{C:\cygwin}. @@ -859,7 +831,8 @@ $ export PATH="/cygdrive/g/gcc_mingw/bin:$PATH" $ automake $ autoconf $ rm config.cache -$ ./configure --with-windows --prefix="/cygdrive/g/gcc_mingw/bin" +$ ./configure --with-windows \ + --prefix="/cygdrive/g/gcc_mingw/bin" $ make clean $ make 2> make.err @@ -1104,7 +1077,7 @@ stationary gaussian process. Temperature, in NGSPICE, is a property associated to the entire circuit, rather an analysis option. Circuit temperature has a default (nominal) -value of 27°C (300.15 K) that can be changed using the @option{TNOM} +value of 27@math{^o}C (300.15 K) that can be changed using the @option{TNOM} option in an @code{.OPTION} control line. All analyses are, thus, performed at circuit temperature, and if you want to simulate circuit behaviour at different temperatures you should prepare a netlist @@ -1971,26 +1944,17 @@ The resistor model consists of process-related device data that allow the resistance to be calculated from geometric information and to be corrected for temperature. The parameters available are: -@multitable @columnfractions .15 .4 .2 .1 .1 -@item name @tab parameter @tab units @tab default @tab example -@item TC1 @tab first order temperature coeff. - @tab Ohm/°C @tab 0.0 -@item TC2 @tab second order temperature coeff. - @tab Ohm/°C@math{^2} @tab 0.0 -@item RSH @tab sheet resistance - @tab Ohm/[] @tab - @tab 50 -@item DEFW @tab default width - @tab meters @tab 1e-6 @tab 2e-6 -@item NARROW @tab narrowing due to side etching - @tab meters @tab 0.0 @tab 1e-7 -@item SHORT @tab shortening due to side etching - @tab meters @tab 0.0 @tab 1e-7 -@item TNOM @tab parameter measurement temperature - @tab °C @tab 27 @tab 50 -@item KF @tab flicker noise coefficient - @tab - @tab 0.0 @tab 1e-25 -@item AF @tab flicker noise exponent - @tab - @tab 0.0 @tab 1.0 +@multitable {NARROW} {parameter measurement temperature} {ohm/@math{^o}C@math{^2}} {default} {example} +@item name @tab parameter @tab units @tab default @tab example +@item TC1 @tab first order temperature coeff. @tab ohm/@math{^o}C @tab 0.0 +@item TC2 @tab second order temperature coeff. @tab ohm/@math{^o}C@math{^2} @tab 0.0 +@item RSH @tab sheet resistance @tab ohm/[] @tab - @tab 50 +@item DEFW @tab default width @tab meters @tab 1e-6 @tab 2e-6 +@item NARROW @tab narrowing due to side etching @tab meters @tab 0.0 @tab 1e-7 +@item SHORT @tab shortening due to side etching @tab meters @tab 0.0 @tab 1e-7 +@item TNOM @tab parameter measurement temperature @tab @math{^o}C @tab 27 @tab 50 +@item KF @tab flicker noise coefficient @tab - @tab 0.0 @tab 1e-25 +@item AF @tab flicker noise exponent @tab - @tab 0.0 @tab 1.0 @end multitable @@ -2205,32 +2169,20 @@ and set the capacitance in the @command{.model} line (@pxref{Capacitors}). The capacitor model contains process information that may be used to compute the capacitance from strictly geometric information. -@multitable @columnfractions .15 .4 .2 .1 .1 -@item name @tab parameter @tab units @tab default @tab example -@item CAP @tab model capacitance - @tab F @tab 0.0 @tab 1e-6 -@item CJ @tab junction bottom capacitance - @tab F/meters@math{^2} @tab - @tab 5e-5 -@item CJSW @tab junction sidewall capacitance - @tab F/meters @tab - @tab 2e-11 -@item DEFW @tab default device width - @tab meters @tab 1e-6 @tab 2e-6 -@item DEFL @tab default device length - @tab meters @tab 0.0 @tab 1e-6 -@item NARROW @tab narrowing due to side etching - @tab meters @tab 0.0 @tab 1e-7 -@item SHORT @tab shorting due to side etching - @tab meters @tab 0.0 @tab 1e-7 -@item TC1 @tab first order temperature coeff. - @tab F/°C @tab 0.0 @tab 0.001 -@item TC2 @tab second order temperature coeff. - @tab F/°C@math{^2} @tab 0.0 @tab 0.0001 -@item TNOM @tab parameter measurement temperature - @tab °C @tab 27 @tab 50 -@item DI @tab relative dielectric constant - @tab F/m @tab 0.0 @tab 1 -@item THICK @tab insulator thickness - @tab meters @tab 0.0 @tab 1e-9 +@multitable {NARROW} {parameter measurement temperature} {F/@math{^o}C@math{^2}} {default} {example} +@item name @tab parameter @tab units @tab default @tab example +@item CAP @tab model capacitance @tab F @tab 0.0 @tab 1e-6 +@item CJ @tab junction bottom capacitance @tab F/meters@math{^2} @tab - @tab 5e-5 +@item CJSW @tab junction sidewall capacitance @tab F/meters @tab - @tab 2e-11 +@item DEFW @tab default device width @tab meters @tab 1e-6 @tab 2e-6 +@item DEFL @tab default device length @tab meters @tab 0.0 @tab 1e-6 +@item NARROW @tab narrowing due to side etching @tab meters @tab 0.0 @tab 1e-7 +@item SHORT @tab shorting due to side etching @tab meters @tab 0.0 @tab 1e-7 +@item TC1 @tab first order temperature coeff. @tab F/@math{^o}C @tab 0.0 @tab 0.001 +@item TC2 @tab second order temperature coeff. @tab F/@math{^o}C@math{^2} @tab 0.0 @tab 0.0001 +@item TNOM @tab parameter measurement temperature @tab @math{^o}C @tab 27 @tab 50 +@item DI @tab relative dielectric constant @tab F/m @tab 0.0 @tab 1 +@item THICK @tab insulator thickness @tab meters @tab 0.0 @tab 1e-9 @end multitable @@ -2373,8 +2325,8 @@ circuit temperature and @option{dtemp}, if present. General form: @example - LYYYYYYY n+ n- - + + LYYYYYYY n+ n- + + @end example @@ -2451,11 +2403,11 @@ magnetic permeability. @item LENGTH @tab Length @tab meters @tab 0.0 @tab 1e-2 @item TC1 @tab first order temperature coeff. - @tab F/°C @tab 0.0 @tab 0.001 + @tab F/@math{^o}C @tab 0.0 @tab 0.001 @item TC2 @tab second order temperature coeff. - @tab F/°C@math{^2} @tab 0.0 @tab 0.0001 + @tab F/@math{^o}C@math{^2} @tab 0.0 @tab 0.0001 @item TNOM @tab parameter measurement temperature - @tab °C @tab 27 @tab 50 + @tab @math{^o}C @tab 27 @tab 50 @item NT @tab number of turns @tab - @tab 0.0 @tab 10 @item MU @tab relative magnetic permeability @@ -3627,13 +3579,13 @@ and @option{IBV} (both of which are positive numbers). @item EG @tab activation energy @tab eV @tab 1.11 @tab 1.11 Si @item @tab @tab @tab @tab 0.69 Sbd @item @tab @tab @tab @tab 0.67 Ge -@item TM1 @tab 1st order tempco for MJ @tab 1/°C @tab 0.0 @tab - -@item TM2 @tab 2nd order tempco for MJ @tab 1/°C^2 @tab 0.0 @tab - +@item TM1 @tab 1st order tempco for MJ @tab 1/@math{^o}C @tab 0.0 @tab - +@item TM2 @tab 2nd order tempco for MJ @tab 1/@math{^o}C@math{^2} @tab 0.0 @tab - @item TNOM @tab parameter measurement temperature @tab C @tab 27 @tab 50 -@item TRS @tab 1st order tempco for RS @tab 1/°C @tab 0.0 @tab - -@item TRS2 @tab 2nd order tempco for RS @tab 1/°C^2 @tab 0.0 @tab - -@item TTT1 @tab 1st order tempco for TT @tab 1/°C @tab 0.0 @tab - -@item TTT2 @tab 2nd order tempco for TT @tab 1/°C^2 @tab 0.0 @tab - +@item TRS @tab 1st order tempco for RS @tab 1/@math{^o}C @tab 0.0 @tab - +@item TRS2 @tab 2nd order tempco for RS @tab 1/@math{^o}C@math{^2} @tab 0.0 @tab - +@item TTT1 @tab 1st order tempco for TT @tab 1/@math{^o}C @tab 0.0 @tab - +@item TTT2 @tab 2nd order tempco for TT @tab 1/@math{^o}C@math{^2} @tab 0.0 @tab - @item XTI @tab saturation-current temp. exp @tab - @tab 3.0 @tab 3.0 pn @item @tab @tab @tab @tab 2.0 Sbd @end multitable @@ -4201,23 +4153,23 @@ internal base node @tab - @tab 1 @item AF @tab flicker-noise exponent @tab - @tab 1 @item FC @tab coefficient for forward-bias depletion capacitance formula @tab - @tab 0.5 @tab o -@item TNOM @tab Parameter measurement temperature @tab °C @tab 27 @tab 50 +@item TNOM @tab Parameter measurement temperature @tab @math{^o}C @tab 27 @tab 50 @item TRE1 @tab 1st order temperature coefficient for RE - (level 2 only) @tab 1/°C @tab 0.0 @tab 1e-3 + (level 2 only) @tab 1/@math{^o}C @tab 0.0 @tab 1e-3 @item TRE2 @tab 2nd order temperature coefficient for RE - (level 2 only) @tab 1/°C^2 @tab 0.0 @tab 1e-5 + (level 2 only) @tab 1/@math{^o}C@math{^2} @tab 0.0 @tab 1e-5 @item TRC1 @tab 1st order temperature coefficient for RC - (level 2 only )@tab 1/°C @tab 0.0 @tab 1e-3 + (level 2 only )@tab 1/@math{^o}C @tab 0.0 @tab 1e-3 @item TRC2 @tab 2nd order temperature coefficient for RC - (level 2 only) @tab 1/°C^2 @tab 0.0 @tab 1e-5 + (level 2 only) @tab 1/@math{^o}C@math{^2} @tab 0.0 @tab 1e-5 @item TRB1 @tab 1st order temperature coefficient for RB - (level 2 only) @tab 1/°C @tab 0.0 @tab 1e-3 + (level 2 only) @tab 1/@math{^o}C @tab 0.0 @tab 1e-3 @item TRB2 @tab 2nd order temperature coefficient for RB - (level 2 only) @tab 1/°C^2 @tab 0.0 @tab 1e-5 + (level 2 only) @tab 1/@math{^o}C@math{^2} @tab 0.0 @tab 1e-5 @item TRB1 @tab 1st order temperature coefficient for RBM - (level 2 only) @tab 1/°C @tab TRB1 @tab 1e-3 + (level 2 only) @tab 1/@math{^o}C @tab TRB1 @tab 1e-3 @item TRB2 @tab 2nd order temperature coefficient for RBM - (level 2 only) @tab 1/°C^2 @tab TRB2 @tab 1e-5 + (level 2 only) @tab 1/@math{^o}C@math{^2} @tab TRB2 @tab 1e-5 @end multitable @@ -4294,7 +4246,7 @@ For details, see [9]. @item FC @tab coefficient for forward-bias depletion capacitance formula @tab - @tab 0.5 @item TNOM @tab parameter measurement temperature - @tab °C @tab 27 @tab 50 + @tab @math{^o}C @tab 27 @tab 50 @end multitable @@ -4520,7 +4472,7 @@ NGSPICE level 1, 2, 3 and 6 parameters: @item KAPPA @tab saturation field factor (MOS3 only) @tab - @tab 0.2 @tab 0.5 @item TNOM @tab parameter measurement temperature - @tab °C @tab 27 @tab 50 + @tab @math{^o}C @tab 27 @tab 50 @end multitable @@ -4601,29 +4553,29 @@ For more information on BSIM2, see reference [5]. @item name @tab parameter @tab units @tab l/w @item VFB @tab flat-band voltage @tab V @tab * @item PHI @tab surface inversion potential @tab V @tab * -@item K1 @tab body effect coefficient @tab V^(1/2) @tab * +@item K1 @tab body effect coefficient @tab V@math{^(1/2)} @tab * @item K2 @tab drain/source depletion charge-sharing coefficient @tab - @tab * @item ETA @tab zero-bias drain-induced barrier-lowering coefficient @tab - @tab * -@item MUZ @tab zero-bias mobility @tab cm^(2)/V-s @tab +@item MUZ @tab zero-bias mobility @tab cm@math{^2}/V-s @tab @item DL @tab shortening of channel @tab Mm @tab @item DW @tab narrowing of channel @tab Mm @tab @item U0 @tab zero-bias transverse-field mobility degradation - coefficient @tab V^(-1) @tab * + coefficient @tab V@math{^-1} @tab * @item U1 @tab zero-bias velocity saturation coefficient @tab Mm/V @tab * -@item X2MZ @tab sens. of mobility to substrate bias at V_ds=0 @tab cm^(2)/V-s @tab * +@item X2MZ @tab sens. of mobility to substrate bias at V_ds=0 @tab cm@math{^2}/V-s @tab * @item X2E @tab sens. of drain-induced barrier lowering effect to - substrate bias @tab V^(-1) @tab * + substrate bias @tab V@math{^-1} @tab * @item X3E @tab sens. of drain-induced barrier lowering effect to - drain bias at V_ds=V_dd @tab V^(-1) @tab * + drain bias at V_ds=V_dd @tab V@math{^-1} @tab * @item X2U0 @tab sens. of transverse field mobility degradation - effect to substrate bias @tab V^(-2) @tab * + effect to substrate bias @tab V@math{^2} @tab * @item X2U1 @tab sens. of velocity saturation effect to substrate - bias @tab MmV^(-2) @tab * -@item MUS @tab mobility at zero substrate bias and at V_ds=V_dd @tab cm^2/V^2-s @tab -@item X2MS @tab sens. of mobility to substrate bias at V_ds=V_dd @tab cm^2/V^2-s @tab * -@item X3MS @tab sens. of mobility to drain bias at V_ds=V_dd @tab cm^2/V^2-s @tab * + bias @tab MmV@math{^2} @tab * +@item MUS @tab mobility at zero substrate bias and at V_ds=V_dd @tab cm@math{^2}/V@math{^2}-s @tab +@item X2MS @tab sens. of mobility to substrate bias at V_ds=V_dd @tab cm@math{^2}/V@math{^2}-s @tab * +@item X3MS @tab sens. of mobility to drain bias at V_ds=V_dd @tab cm@math{^2}/V@math{^2}-s @tab * @item X3U1 @tab sens. of velocity saturation effect on drain bias - at V_ds=V_dd @tab MmV^(-2) @tab * + at V_ds=V_dd @tab MmV@math{^2} @tab * @item TOX @tab gate oxide thickness @tab Mm @tab @item TEMP @tab temperature at which parameters were measured @tab C @tab @item VDD @tab measurement bias range @tab V @tab @@ -4638,14 +4590,14 @@ For more information on BSIM2, see reference [5]. @item NB @tab sens. of subthreshold slope to substrate bias @tab - @tab * @item ND @tab sens. of subthreshold slope to drain bias @tab - @tab * @item RSH @tab drain and source diffusion sheet resistance @tab Z/[] @tab -@item JS @tab source drain junction current density @tab A/m^2 @tab +@item JS @tab source drain junction current density @tab A/m@math{^2} @tab @item PB @tab built in potential of source drain junction @tab V @tab @item MJ @tab Grading coefficient of source drain junction @tab - @tab @item BSW @tab built in potential of source, drain junction sidewall @tab V @tab @item MJSW @tab grading coefficient of source drain junction sidewall @tab - @tab -@item CJ @tab Source drain junction capacitance per unit area @tab F/m^2 @tab +@item CJ @tab Source drain junction capacitance per unit area @tab F/m@math{^2} @tab @item CJSW @tab source drain junction sidewall capacitance per unit length @tab F/m @tab @item WDF @tab source drain junction default width @tab m @tab @@ -4733,28 +4685,23 @@ Two ohmic resistances, RD and RS, are included. Charge storage is modeled by total gate charge as a function of gate-drain and gate-source voltages and is defined by the parameters CGS, CGD, and PB. - -@example -name parameter units default example area - - 1 VTO pinch-off voltage V -2.0 -2.0 - 2 - 2 BETA transconductance parameter A/V 1.0e-4 1.0e-3 * - 3 B doping tail extending parameter 1/V 0.3 0.3 * - 4 ALPHA saturation voltage parameter 1/V 2 2 * - 5 LAMBDA channel-length modulation - parameter 1/V 0 1.0e-4 - 6 RD drain ohmic resistance Z 0 100 * - 7 RS source ohmic resistance Z 0 100 * - 8 CGS zero-bias G-S junction capacitance F 0 5pF * - 9 CGD zero-bias G-D junction capacitance F 0 1pF * - 10 PB gate junction potential V 1 0.6 - 11 KF flicker noise coefficient - 0 - 12 AF flicker noise exponent - 1 - 13 FC coefficient for forward-bias - 0.5 - depletion capacitance formula -@end example - +@multitable {LAMBDA} {channel-length modulation parameter} {units} {default} {example} {area} +@item name @tab parameter @tab units @tab default @tab example @tab area +@item VTO @tab pinch-off voltage @tab V @tab -2.0 @tab -2.0 +@item BETA @tab transconductance parameter @tab A/V@math{^2} @tab 1.0e-4 @tab 1.0e-3 @tab * +@item B @tab doping tail extending parameter @tab 1/V @tab 0.3 @tab 0.3 @tab * +@item ALPHA @tab saturation voltage parameter @tab 1/V @tab 2 @tab 2 @tab * +@item LAMBDA @tab channel-length modulation parameter @tab 1/V @tab 0 @tab 1.0e-4 +@item RD @tab drain ohmic resistance @tab Z @tab 0 @tab 100 @tab * +@item RS @tab source ohmic resistance @tab Z @tab 0 @tab 100 @tab * +@item CGS @tab zero-bias G-S junction capacitance @tab F @tab 0 @tab 5pF @tab * +@item CGD @tab zero-bias G-D junction capacitance @tab F @tab 0 @tab 1pF @tab * +@item PB @tab gate junction potential @tab V @tab 1 @tab 0.6 +@item KF @tab flicker noise coefficient @tab - @tab 0 +@item AF @tab flicker noise exponent @tab - @tab 1 +@item FC @tab coefficient for forward-bias + depletion capacitance formula @tab - @tab 0.5 +@end multitable @node Analyses and Output Control, Interactive Interpreter, Circuit Elements and Models, Top @@ -5685,13 +5632,11 @@ the appropriate documentation on the X Window System for more details. Command Synopsis @example - ngspice [ -n ] [ -t term ] [ -r rawfile] [ -b ] [ -i ] [ input file ... ] +ngspice [ -n ] [ -t term ] [ -r rawfile] [ -b ] [ -i ] [ input file ... ] - nutmeg [ - ] [ -n ] [ -t term ] [ datafile ... ] +nutmeg [ - ] [ -n ] [ -t term ] [ datafile ... ] @end example - - Options are: @table @code @@ -5982,7 +5927,7 @@ The square root of -1 @item kelvin -Absolute 0 in Centigrade (-273.15 °C) +Absolute 0 in Centigrade (-273.15 @math{^o}C) @item echarge @@ -7151,10 +7096,11 @@ Linux janus.wayout.net 2.4.20 #1 SMP Tue Jun 10 18:58:26 CEST 2003 i686 ngspice 2 -> @end example -@strong{Note:} This command may not be available on your environment, if +@quotation Note +This command may not be available on your environment, if it is not available, please send analogous information when submitting bug reports. - +@end quotation @node Tf, Trace, Stop, Commands @subsection Tf*: Run a Transfer Function analysis @@ -8756,29 +8702,29 @@ and model, but are provided as a quick reference guide. --------------------------------------------------------------------------- -| BSIM1 - model input-output parameters - continued | -|--------------------------------------------------------------------------+ -|tox Gate oxide thickness in um | -|temp Temperature in degree Celsius | -|vdd Supply voltage to specify mus | -|cgso Gate source overlap capacitance per unit channel width(m) | - --------------------------------------------------------------------------- -|cgdo Gate drain overlap capacitance per unit channel width(m) | -|cgbo Gate bulk overlap capacitance per unit channel length(m) | -|xpart Flag for channel charge partitioning | -|rsh Source drain diffusion sheet resistance in ohm per square | -|--------------------------------------------------------------------------+ -|js Source drain junction saturation current per unit area | -|pb Source drain junction built in potential | - mj Source drain bottom junction capacitance grading coefficient -|pbsw Source drain side junction capacitance built in potential | - --------------------------------------------------------------------------- -|mjsw Source drain side junction capacitance grading coefficient | -|cj Source drain bottom junction capacitance per unit area | -|cjsw Source drain side junction capacitance per unit area | -|wdf Default width of source drain diffusion in um | -|dell Length reduction of source drain diffusion | - --------------------------------------------------------------------------- +| BSIM1 - model input-output parameters - continued | +|-----------------------------------------------------------------------+ +|tox Gate oxide thickness in um | +|temp Temperature in degree Celsius | +|vdd Supply voltage to specify mus | +|cgso Gate source overlap capacitance per unit channel width(m) | + ------------------------------------------------------------------------ +|cgdo Gate drain overlap capacitance per unit channel width(m) | +|cgbo Gate bulk overlap capacitance per unit channel length(m) | +|xpart Flag for channel charge partitioning | +|rsh Source drain diffusion sheet resistance in ohm per square | +|-----------------------------------------------------------------------+ +|js Source drain junction saturation current per unit area | +|pb Source drain junction built in potential | +|mj Source drain bottom junction capacitance grading coefficient +|pbsw Source drain side junction capacitance built in potential | + ------------------------------------------------------------------------ +|mjsw Source drain side junction capacitance grading coefficient | +|cj Source drain bottom junction capacitance per unit area | +|cjsw Source drain side junction capacitance per unit area | +|wdf Default width of source drain diffusion in um | +|dell Length reduction of source drain diffusion | + ------------------------------------------------------------------------ @end example