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* Fixed the problems of the AUTHORS file not being found by adding its 

directory to the search paths for makeinfo and for texi2dvi in Makefile.am

  *  Fixed the warning caused by @strong{Note:} in ngspice.texti - used the
     @quotation Note style as given in the texinfo user manual section 10.2

  *  Added an @include version.texi in the header of the ngspice.texi file.
     This causes automake to create the necessary files and allow the use of
     @value(VERSION) in the ngspice.texi. The .cvsignore file has been adjusted
     to take account of the generated files.

  *  Used @copying and @insertcopying for the copyright text in ngspice.texi
     and modified the file's structure a little. It now more closely follows the
     simple example given in the texinfo user manual.

  *  Fixed some of the 'overfull' error generated by TeX when processing
     ngspice.texi - many more still present.

  *  removed non-ASCII characters from ngspice.texi. this needed a work-round
     for the degrees symbol - used @math{^o}

  *  Added ngsspice.pdf as an output file of make dist
This commit is contained in:
sjborley 2005-08-14 19:35:56 +00:00
parent 060596f439
commit 5a6f1f74db
4 changed files with 193 additions and 214 deletions
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4
doc/.cvsignore
View File

@ -2,6 +2,7 @@ Makefile.in
Makefile
ngspice.info*
ngspice.ps
ngspice.pdf
ngspice.vrs
ngspice.fns
ngspice.toc
@ -15,3 +16,6 @@ ngspice.aux
ngspice.dvi
ngspice.log
texinfo.tex
mdate-sh
stamp-vti
version.texi

25
doc/ChangeLog
View File

@ -1,3 +1,28 @@
2005-08-14 Steven Borley <steven.borley@virgin.net>
* Fixed the problems of the AUTHORS file not being found by adding its
directory to the search paths for makeinfo and for texi2dvi in Makefile.am
* Fixed the warning caused by @strong{Note:} in ngspice.texti - used the
@quotation Note style as given in the texinfo user manual section 10.2
* Added an @include version.texi in the header of the ngspice.texi file.
This causes automake to create the necessary files and allow the use of
@value(VERSION) in the ngspice.texi. The .cvsignore file has been adjusted
to take account of the generated files.
* Used @copying and @insertcopying for the copyright text in ngspice.texi
and modified the file's structure a little. It now more closely follows the
simple example given in the texinfo user manual.
* Fixed some of the 'overfull' error generated by TeX when processing
ngspice.texi - many more still present.
* removed non-ASCII characters from ngspice.texi. this needed a work-round
for the degrees symbol - used @math{^o}
* Added ngsspice.pdf as an output file of make dist
2001-12-05 Emmanuel Rouat <emmanuel.rouat@wanadoo.fr>
* ngspice.texi: changed (most) references of spice3 to ngspice.

8
doc/Makefile.am
View File

@ -1,6 +1,6 @@
## Process this file with automake to produce Makefile.in
EXTRA_DIST = ngspice.ps
EXTRA_DIST = ngspice.ps ngspice.pdf
info_TEXINFOS = ngspice.texi
@ -10,4 +10,8 @@ DISTCLEANFILES = $CLEANFILES *.ps *.dvi *.info*
MAINTAINERCLEANFILES = $DISTCLEANFILES Makefile.in
AM_MAKEINFOFLAGS = -D "top_srcdir .."
# This adds the root directory of the ngspice source distribution
# to be included in the search path for includes in the ngspice.texi file
# (which is necessary for the AUTHORS file to be found)
AM_MAKEINFOFLAGS = -I "../"
TEXI2DVI = texi2dvi -I "../"

370
doc/ngspice.texi
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@ -1,15 +1,17 @@
\input texinfo @c -*-texinfo-*-
@c $Id$
@c %**start of header
@setfilename ngspice.info
@include version.texi
@settitle NGSPICE User Manual
@setchapternewpage odd
@c %**end of header
@ifinfo
This file documents NGSPICE.
@c Summary Description and Copyright
@copying
Copyright 1996 The Regents of the University of California.
@quotation
Permission to use, copy, modify, and distribute this software and its
documentation for educational, research and non-profit purposes,
without fee, and without a written agreement is hereby granted,
@ -34,90 +36,59 @@ LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR
A PARTICULAR PURPOSE. THE SOFTWARE PROVIDED HEREUNDER IS ON AN "AS IS"
BASIS, AND THE UNIVERSITY OF CALIFORNIA HAS NO OBLIGATIONS TO PROVIDE
MAINTENANCE, SUPPORT, UPDATES, ENHANCEMENTS, OR MODIFICATIONS.
@end ifinfo
@end quotation
@end copying
@c This title page illustrates only one of the
@c two methods of forming a title page.
@c Titlepage, Contents, Copyright and Contents
@titlepage
@title NGSPICE User Manual
@subtitle Describes ngspice-rework15
@subtitle Draft Version 0.1
@subtitle Describes ngspice-rework-@value{VERSION}
@subtitle Draft Version 0.2
@author Many Authors
@c The following two commands
@c start the copyright page.
@c The following two commands start the copyright page.
@page
@vskip 0pt plus 1filll
Copyright 1996 The Regents of the University of California.
@c Published by ...
Permission to use, copy, modify, and distribute this software and its
documentation for educational, research and non-profit purposes,
without fee, and without a written agreement is hereby granted,
provided that the above copyright notice, this paragraph and the
following three paragraphs appear in all copies.
This software program and documentation are copyrighted by The Regents
of the University of California. The software program and
documentation are supplied "as is", without any accompanying services
from The Regents. The Regents does not warrant that the operation of
the program will be uninterrupted or error-free. The end-user
understands that the program was developed for research purposes and
is advised not to rely exclusively on the program for any reason.
IN NO EVENT SHALL THE UNIVERSITY OF CALIFORNIA BE LIABLE TO ANY PARTY
FOR DIRECT, INDIRECT, SPECIAL, INCIDENTAL, OR CONSEQUENTIAL DAMAGES,
INCLUDING LOST PROFITS, ARISING OUT OF THE USE OF THIS SOFTWARE AND
ITS DOCUMENTATION, EVEN IF THE UNIVERSITY OF CALIFORNIA HAS BEEN
ADVISED OF THE POSSIBILITY OF SUCH DAMAGE. THE UNIVERSITY OF
CALIFORNIA SPECIFICALLY DISCLAIMS ANY WARRANTIES, INCLUDING, BUT NOT
LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR
A PARTICULAR PURPOSE. THE SOFTWARE PROVIDED HEREUNDER IS ON AN "AS IS"
BASIS, AND THE UNIVERSITY OF CALIFORNIA HAS NO OBLIGATIONS TO PROVIDE
MAINTENANCE, SUPPORT, UPDATES, ENHANCEMENTS, OR MODIFICATIONS.
@insertcopying
@end titlepage
@node Top, Preface, (dir), (dir)
@ifinfo
This document describes the mixed level simulator NGspice
This document applies to version 15
of the program named NGSPICE
@end ifinfo
@c Output the table of contents at the begining
@contents
@c 'Top' Node and master menu
@ifnottex
@node Top, Preface, (dir), (dir)
@top NGSpice User Manual
This manual describes the mixed level simulator NGspice
and applies to the version called Rework @value{VERSION}.
@insertcopying
@end ifnottex
@menu
* Preface:: Some words about this manual.
* Acknowledgements:: Almost all the people who contributed
to NGSPICE development.
* Release Notes:: Release notes for the NGSPICE simulator
* Introduction:: Description of NGSPICE. Try to answer
the question: What NGSPICE is ?
* NGSPICE Compilation:: How to compile NGSPICE.
* Supported Analyses:: Describes supported analyses and introduces
some convergence issues.
* Circuit Description:: How to input a circuit to the simulator.
* Circuit Elements and Models:: Description and use of the devices models
built into NGSPICE.
* Analyses and Output Control:: How to run analyses and check the results.
* Interactive Interpreter:: The commands recognized by the NGSPICE
interactive frontend.
* Bibliography:: A small bibliography.
* Example Circuits:: Some examples.
* Model and Device Parameters:: Equations that makes the models and
parameters.
* Preface:: Some words about this manual.
* Acknowledgements:: Almost all the people who contributed
to NGSPICE development.
* Release Notes:: Release notes for the NGSPICE simulator
* Introduction:: Description of NGSPICE. Try to answer
the question: What NGSPICE is ?
* NGSPICE Compilation:: How to compile NGSPICE.
* Supported Analyses:: Describes supported analyses and introduces
some convergence issues.
* Circuit Description:: How to input a circuit to the simulator.
* Circuit Elements and Models:: Description and use of the devices models
built into NGSPICE.
* Analyses and Output Control:: How to run analyses and check the results.
* Interactive Interpreter:: The commands recognized by the NGSPICE
interactive frontend.
* Bibliography:: A small bibliography.
* Example Circuits:: Some examples.
* Model and Device Parameters:: Equations that makes the models and parameters.
@end menu
@c @node First Chapter, Second Chapter, top, top
@c @comment node-name, next, previous, up
@c @chapter First Chapter
@c @cindex Index entry for First Chapter
@c Body of the Document
@node Preface, Acknowledgements, Top, Top
@comment node-name, next, previous, up
@ -172,7 +143,8 @@ within the limitations of the tools.
@chapter Acknowledgements
@c Include the AUTHORS file from the top directory
@include @value{top_srcdir}/AUTHORS
@c include @value{top_srcdir}/AUTHORS
@include AUTHORS
@node Release Notes, Introduction, Acknowledgements, Top
@comment node-name, next, previous, up
@ -834,7 +806,7 @@ Several files have been edited, all above @file{configure.in} to comply with
the autotools from CYGWIN. Other @file{*.c} have been edited and patched with
@code{#ifdef __MINGW32__ ... #endif}. Compared to the CYGWIN port for
WINDOWS only minor modifications have been done. Still the WINDOWS port
from Wolfgang Mües is used. The resulting source code should still be
from Wolfgang M@:ues is used. The resulting source code should still be
compatible to LINUX or UNIX porting (including autotools). I have however
not tested that.
@ -846,8 +818,8 @@ This is how I made ngspice with CYGWIN and external MINGW32 with the attached
patches applied to ng-spice-rework-14:
according to
@url{http://www.geocrawler.com/lists/3/SourceForge/6013/0/7321042/}
@url{http://www.geocrawler.com/@/lists/3/@/SourceForge/@/6013/0/@/7321042/}
@c note - the '@/' allows TeX to insert a line break if necessary
CYGWIN is installed in @file{C:\cygwin}.
@ -859,7 +831,8 @@ $ export PATH="/cygdrive/g/gcc_mingw/bin:$PATH"
$ automake
$ autoconf
$ rm config.cache
$ ./configure --with-windows --prefix="/cygdrive/g/gcc_mingw/bin"
$ ./configure --with-windows \
--prefix="/cygdrive/g/gcc_mingw/bin"
$ make clean
$ make 2> make.err
@ -1104,7 +1077,7 @@ stationary gaussian process.
Temperature, in NGSPICE, is a property associated to the entire circuit,
rather an analysis option. Circuit temperature has a default (nominal)
value of 27°C (300.15 K) that can be changed using the @option{TNOM}
value of 27@math{^o}C (300.15 K) that can be changed using the @option{TNOM}
option in an @code{.OPTION} control line. All analyses are, thus,
performed at circuit temperature, and if you want to simulate circuit
behaviour at different temperatures you should prepare a netlist
@ -1971,26 +1944,17 @@ The resistor model consists of process-related device data that allow
the resistance to be calculated from geometric information and to be
corrected for temperature. The parameters available are:
@multitable @columnfractions .15 .4 .2 .1 .1
@item name @tab parameter @tab units @tab default @tab example
@item TC1 @tab first order temperature coeff.
@tab Ohm/°C @tab 0.0
@item TC2 @tab second order temperature coeff.
@tab Ohm/°C@math{^2} @tab 0.0
@item RSH @tab sheet resistance
@tab Ohm/[] @tab - @tab 50
@item DEFW @tab default width
@tab meters @tab 1e-6 @tab 2e-6
@item NARROW @tab narrowing due to side etching
@tab meters @tab 0.0 @tab 1e-7
@item SHORT @tab shortening due to side etching
@tab meters @tab 0.0 @tab 1e-7
@item TNOM @tab parameter measurement temperature
@tab °C @tab 27 @tab 50
@item KF @tab flicker noise coefficient
@tab - @tab 0.0 @tab 1e-25
@item AF @tab flicker noise exponent
@tab - @tab 0.0 @tab 1.0
@multitable {NARROW} {parameter measurement temperature} {ohm/@math{^o}C@math{^2}} {default} {example}
@item name @tab parameter @tab units @tab default @tab example
@item TC1 @tab first order temperature coeff. @tab ohm/@math{^o}C @tab 0.0
@item TC2 @tab second order temperature coeff. @tab ohm/@math{^o}C@math{^2} @tab 0.0
@item RSH @tab sheet resistance @tab ohm/[] @tab - @tab 50
@item DEFW @tab default width @tab meters @tab 1e-6 @tab 2e-6
@item NARROW @tab narrowing due to side etching @tab meters @tab 0.0 @tab 1e-7
@item SHORT @tab shortening due to side etching @tab meters @tab 0.0 @tab 1e-7
@item TNOM @tab parameter measurement temperature @tab @math{^o}C @tab 27 @tab 50
@item KF @tab flicker noise coefficient @tab - @tab 0.0 @tab 1e-25
@item AF @tab flicker noise exponent @tab - @tab 0.0 @tab 1.0
@end multitable
@ -2205,32 +2169,20 @@ and set the capacitance in the @command{.model} line (@pxref{Capacitors}).
The capacitor model contains process information that may be used to
compute the capacitance from strictly geometric information.
@multitable @columnfractions .15 .4 .2 .1 .1
@item name @tab parameter @tab units @tab default @tab example
@item CAP @tab model capacitance
@tab F @tab 0.0 @tab 1e-6
@item CJ @tab junction bottom capacitance
@tab F/meters@math{^2} @tab - @tab 5e-5
@item CJSW @tab junction sidewall capacitance
@tab F/meters @tab - @tab 2e-11
@item DEFW @tab default device width
@tab meters @tab 1e-6 @tab 2e-6
@item DEFL @tab default device length
@tab meters @tab 0.0 @tab 1e-6
@item NARROW @tab narrowing due to side etching
@tab meters @tab 0.0 @tab 1e-7
@item SHORT @tab shorting due to side etching
@tab meters @tab 0.0 @tab 1e-7
@item TC1 @tab first order temperature coeff.
@tab F/°C @tab 0.0 @tab 0.001
@item TC2 @tab second order temperature coeff.
@tab F/°C@math{^2} @tab 0.0 @tab 0.0001
@item TNOM @tab parameter measurement temperature
@tab °C @tab 27 @tab 50
@item DI @tab relative dielectric constant
@tab F/m @tab 0.0 @tab 1
@item THICK @tab insulator thickness
@tab meters @tab 0.0 @tab 1e-9
@multitable {NARROW} {parameter measurement temperature} {F/@math{^o}C@math{^2}} {default} {example}
@item name @tab parameter @tab units @tab default @tab example
@item CAP @tab model capacitance @tab F @tab 0.0 @tab 1e-6
@item CJ @tab junction bottom capacitance @tab F/meters@math{^2} @tab - @tab 5e-5
@item CJSW @tab junction sidewall capacitance @tab F/meters @tab - @tab 2e-11
@item DEFW @tab default device width @tab meters @tab 1e-6 @tab 2e-6
@item DEFL @tab default device length @tab meters @tab 0.0 @tab 1e-6
@item NARROW @tab narrowing due to side etching @tab meters @tab 0.0 @tab 1e-7
@item SHORT @tab shorting due to side etching @tab meters @tab 0.0 @tab 1e-7
@item TC1 @tab first order temperature coeff. @tab F/@math{^o}C @tab 0.0 @tab 0.001
@item TC2 @tab second order temperature coeff. @tab F/@math{^o}C@math{^2} @tab 0.0 @tab 0.0001
@item TNOM @tab parameter measurement temperature @tab @math{^o}C @tab 27 @tab 50
@item DI @tab relative dielectric constant @tab F/m @tab 0.0 @tab 1
@item THICK @tab insulator thickness @tab meters @tab 0.0 @tab 1e-9
@end multitable
@ -2373,8 +2325,8 @@ circuit temperature and @option{dtemp}, if present.
General form:
@example
LYYYYYYY n+ n- <value> <mname> <nt=val> <m=val> <scale=val> <temp=val>
+ <dtemp=val> <ic=init_condition>
LYYYYYYY n+ n- <value> <mname> <nt=val> <m=val> <scale=val> <temp=val>
+ <dtemp=val> <ic=init_condition>
@end example
@ -2451,11 +2403,11 @@ magnetic permeability.
@item LENGTH @tab Length
@tab meters @tab 0.0 @tab 1e-2
@item TC1 @tab first order temperature coeff.
@tab F/°C @tab 0.0 @tab 0.001
@tab F/@math{^o}C @tab 0.0 @tab 0.001
@item TC2 @tab second order temperature coeff.
@tab F/°C@math{^2} @tab 0.0 @tab 0.0001
@tab F/@math{^o}C@math{^2} @tab 0.0 @tab 0.0001
@item TNOM @tab parameter measurement temperature
@tab °C @tab 27 @tab 50
@tab @math{^o}C @tab 27 @tab 50
@item NT @tab number of turns
@tab - @tab 0.0 @tab 10
@item MU @tab relative magnetic permeability
@ -3627,13 +3579,13 @@ and @option{IBV} (both of which are positive numbers).
@item EG @tab activation energy @tab eV @tab 1.11 @tab 1.11 Si
@item @tab @tab @tab @tab 0.69 Sbd
@item @tab @tab @tab @tab 0.67 Ge
@item TM1 @tab 1st order tempco for MJ @tab 1/°C @tab 0.0 @tab -
@item TM2 @tab 2nd order tempco for MJ @tab 1/°C^2 @tab 0.0 @tab -
@item TM1 @tab 1st order tempco for MJ @tab 1/@math{^o}C @tab 0.0 @tab -
@item TM2 @tab 2nd order tempco for MJ @tab 1/@math{^o}C@math{^2} @tab 0.0 @tab -
@item TNOM @tab parameter measurement temperature @tab C @tab 27 @tab 50
@item TRS @tab 1st order tempco for RS @tab 1/°C @tab 0.0 @tab -
@item TRS2 @tab 2nd order tempco for RS @tab 1/°C^2 @tab 0.0 @tab -
@item TTT1 @tab 1st order tempco for TT @tab 1/°C @tab 0.0 @tab -
@item TTT2 @tab 2nd order tempco for TT @tab 1/°C^2 @tab 0.0 @tab -
@item TRS @tab 1st order tempco for RS @tab 1/@math{^o}C @tab 0.0 @tab -
@item TRS2 @tab 2nd order tempco for RS @tab 1/@math{^o}C@math{^2} @tab 0.0 @tab -
@item TTT1 @tab 1st order tempco for TT @tab 1/@math{^o}C @tab 0.0 @tab -
@item TTT2 @tab 2nd order tempco for TT @tab 1/@math{^o}C@math{^2} @tab 0.0 @tab -
@item XTI @tab saturation-current temp. exp @tab - @tab 3.0 @tab 3.0 pn
@item @tab @tab @tab @tab 2.0 Sbd
@end multitable
@ -4201,23 +4153,23 @@ internal base node @tab - @tab 1
@item AF @tab flicker-noise exponent @tab - @tab 1
@item FC @tab coefficient for forward-bias depletion capacitance formula
@tab - @tab 0.5 @tab o
@item TNOM @tab Parameter measurement temperature @tab °C @tab 27 @tab 50
@item TNOM @tab Parameter measurement temperature @tab @math{^o}C @tab 27 @tab 50
@item TRE1 @tab 1st order temperature coefficient for RE
(level 2 only) @tab 1/°C @tab 0.0 @tab 1e-3
(level 2 only) @tab 1/@math{^o}C @tab 0.0 @tab 1e-3
@item TRE2 @tab 2nd order temperature coefficient for RE
(level 2 only) @tab 1/°C^2 @tab 0.0 @tab 1e-5
(level 2 only) @tab 1/@math{^o}C@math{^2} @tab 0.0 @tab 1e-5
@item TRC1 @tab 1st order temperature coefficient for RC
(level 2 only )@tab 1/°C @tab 0.0 @tab 1e-3
(level 2 only )@tab 1/@math{^o}C @tab 0.0 @tab 1e-3
@item TRC2 @tab 2nd order temperature coefficient for RC
(level 2 only) @tab 1/°C^2 @tab 0.0 @tab 1e-5
(level 2 only) @tab 1/@math{^o}C@math{^2} @tab 0.0 @tab 1e-5
@item TRB1 @tab 1st order temperature coefficient for RB
(level 2 only) @tab 1/°C @tab 0.0 @tab 1e-3
(level 2 only) @tab 1/@math{^o}C @tab 0.0 @tab 1e-3
@item TRB2 @tab 2nd order temperature coefficient for RB
(level 2 only) @tab 1/°C^2 @tab 0.0 @tab 1e-5
(level 2 only) @tab 1/@math{^o}C@math{^2} @tab 0.0 @tab 1e-5
@item TRB1 @tab 1st order temperature coefficient for RBM
(level 2 only) @tab 1/°C @tab TRB1 @tab 1e-3
(level 2 only) @tab 1/@math{^o}C @tab TRB1 @tab 1e-3
@item TRB2 @tab 2nd order temperature coefficient for RBM
(level 2 only) @tab 1/°C^2 @tab TRB2 @tab 1e-5
(level 2 only) @tab 1/@math{^o}C@math{^2} @tab TRB2 @tab 1e-5
@end multitable
@ -4294,7 +4246,7 @@ For details, see [9].
@item FC @tab coefficient for forward-bias depletion capacitance formula
@tab - @tab 0.5
@item TNOM @tab parameter measurement temperature
@tab °C @tab 27 @tab 50
@tab @math{^o}C @tab 27 @tab 50
@end multitable
@ -4520,7 +4472,7 @@ NGSPICE level 1, 2, 3 and 6 parameters:
@item KAPPA @tab saturation field factor (MOS3 only)
@tab - @tab 0.2 @tab 0.5
@item TNOM @tab parameter measurement temperature
@tab °C @tab 27 @tab 50
@tab @math{^o}C @tab 27 @tab 50
@end multitable
@ -4601,29 +4553,29 @@ For more information on BSIM2, see reference [5].
@item name @tab parameter @tab units @tab l/w
@item VFB @tab flat-band voltage @tab V @tab *
@item PHI @tab surface inversion potential @tab V @tab *
@item K1 @tab body effect coefficient @tab V^(1/2) @tab *
@item K1 @tab body effect coefficient @tab V@math{^(1/2)} @tab *
@item K2 @tab drain/source depletion charge-sharing coefficient @tab - @tab *
@item ETA @tab zero-bias drain-induced barrier-lowering coefficient @tab - @tab *
@item MUZ @tab zero-bias mobility @tab cm^(2)/V-s @tab
@item MUZ @tab zero-bias mobility @tab cm@math{^2}/V-s @tab
@item DL @tab shortening of channel @tab Mm @tab
@item DW @tab narrowing of channel @tab Mm @tab
@item U0 @tab zero-bias transverse-field mobility degradation
coefficient @tab V^(-1) @tab *
coefficient @tab V@math{^-1} @tab *
@item U1 @tab zero-bias velocity saturation coefficient @tab Mm/V @tab *
@item X2MZ @tab sens. of mobility to substrate bias at V_ds=0 @tab cm^(2)/V-s @tab *
@item X2MZ @tab sens. of mobility to substrate bias at V_ds=0 @tab cm@math{^2}/V-s @tab *
@item X2E @tab sens. of drain-induced barrier lowering effect to
substrate bias @tab V^(-1) @tab *
substrate bias @tab V@math{^-1} @tab *
@item X3E @tab sens. of drain-induced barrier lowering effect to
drain bias at V_ds=V_dd @tab V^(-1) @tab *
drain bias at V_ds=V_dd @tab V@math{^-1} @tab *
@item X2U0 @tab sens. of transverse field mobility degradation
effect to substrate bias @tab V^(-2) @tab *
effect to substrate bias @tab V@math{^2} @tab *
@item X2U1 @tab sens. of velocity saturation effect to substrate
bias @tab MmV^(-2) @tab *
@item MUS @tab mobility at zero substrate bias and at V_ds=V_dd @tab cm^2/V^2-s @tab
@item X2MS @tab sens. of mobility to substrate bias at V_ds=V_dd @tab cm^2/V^2-s @tab *
@item X3MS @tab sens. of mobility to drain bias at V_ds=V_dd @tab cm^2/V^2-s @tab *
bias @tab MmV@math{^2} @tab *
@item MUS @tab mobility at zero substrate bias and at V_ds=V_dd @tab cm@math{^2}/V@math{^2}-s @tab
@item X2MS @tab sens. of mobility to substrate bias at V_ds=V_dd @tab cm@math{^2}/V@math{^2}-s @tab *
@item X3MS @tab sens. of mobility to drain bias at V_ds=V_dd @tab cm@math{^2}/V@math{^2}-s @tab *
@item X3U1 @tab sens. of velocity saturation effect on drain bias
at V_ds=V_dd @tab MmV^(-2) @tab *
at V_ds=V_dd @tab MmV@math{^2} @tab *
@item TOX @tab gate oxide thickness @tab Mm @tab
@item TEMP @tab temperature at which parameters were measured @tab C @tab
@item VDD @tab measurement bias range @tab V @tab
@ -4638,14 +4590,14 @@ For more information on BSIM2, see reference [5].
@item NB @tab sens. of subthreshold slope to substrate bias @tab - @tab *
@item ND @tab sens. of subthreshold slope to drain bias @tab - @tab *
@item RSH @tab drain and source diffusion sheet resistance @tab Z/[] @tab
@item JS @tab source drain junction current density @tab A/m^2 @tab
@item JS @tab source drain junction current density @tab A/m@math{^2} @tab
@item PB @tab built in potential of source drain junction @tab V @tab
@item MJ @tab Grading coefficient of source drain junction @tab - @tab
@item BSW @tab built in potential of source, drain junction
sidewall @tab V @tab
@item MJSW @tab grading coefficient of source drain junction
sidewall @tab - @tab
@item CJ @tab Source drain junction capacitance per unit area @tab F/m^2 @tab
@item CJ @tab Source drain junction capacitance per unit area @tab F/m@math{^2} @tab
@item CJSW @tab source drain junction sidewall capacitance per
unit length @tab F/m @tab
@item WDF @tab source drain junction default width @tab m @tab
@ -4733,28 +4685,23 @@ Two ohmic resistances, RD and RS, are included. Charge storage is
modeled by total gate charge as a function of gate-drain and gate-source
voltages and is defined by the parameters CGS, CGD, and PB.
@example
name parameter units default example area
1 VTO pinch-off voltage V -2.0 -2.0
2
2 BETA transconductance parameter A/V 1.0e-4 1.0e-3 *
3 B doping tail extending parameter 1/V 0.3 0.3 *
4 ALPHA saturation voltage parameter 1/V 2 2 *
5 LAMBDA channel-length modulation
parameter 1/V 0 1.0e-4
6 RD drain ohmic resistance Z 0 100 *
7 RS source ohmic resistance Z 0 100 *
8 CGS zero-bias G-S junction capacitance F 0 5pF *
9 CGD zero-bias G-D junction capacitance F 0 1pF *
10 PB gate junction potential V 1 0.6
11 KF flicker noise coefficient - 0
12 AF flicker noise exponent - 1
13 FC coefficient for forward-bias - 0.5
depletion capacitance formula
@end example
@multitable {LAMBDA} {channel-length modulation parameter} {units} {default} {example} {area}
@item name @tab parameter @tab units @tab default @tab example @tab area
@item VTO @tab pinch-off voltage @tab V @tab -2.0 @tab -2.0
@item BETA @tab transconductance parameter @tab A/V@math{^2} @tab 1.0e-4 @tab 1.0e-3 @tab *
@item B @tab doping tail extending parameter @tab 1/V @tab 0.3 @tab 0.3 @tab *
@item ALPHA @tab saturation voltage parameter @tab 1/V @tab 2 @tab 2 @tab *
@item LAMBDA @tab channel-length modulation parameter @tab 1/V @tab 0 @tab 1.0e-4
@item RD @tab drain ohmic resistance @tab Z @tab 0 @tab 100 @tab *
@item RS @tab source ohmic resistance @tab Z @tab 0 @tab 100 @tab *
@item CGS @tab zero-bias G-S junction capacitance @tab F @tab 0 @tab 5pF @tab *
@item CGD @tab zero-bias G-D junction capacitance @tab F @tab 0 @tab 1pF @tab *
@item PB @tab gate junction potential @tab V @tab 1 @tab 0.6
@item KF @tab flicker noise coefficient @tab - @tab 0
@item AF @tab flicker noise exponent @tab - @tab 1
@item FC @tab coefficient for forward-bias
depletion capacitance formula @tab - @tab 0.5
@end multitable
@node Analyses and Output Control, Interactive Interpreter, Circuit Elements and Models, Top
@ -5685,13 +5632,11 @@ the appropriate documentation on the X Window System for more details.
Command Synopsis
@example
ngspice [ -n ] [ -t term ] [ -r rawfile] [ -b ] [ -i ] [ input file ... ]
ngspice [ -n ] [ -t term ] [ -r rawfile] [ -b ] [ -i ] [ input file ... ]
nutmeg [ - ] [ -n ] [ -t term ] [ datafile ... ]
nutmeg [ - ] [ -n ] [ -t term ] [ datafile ... ]
@end example
Options are:
@table @code
@ -5982,7 +5927,7 @@ The square root of -1
@item kelvin
Absolute 0 in Centigrade (-273.15 °C)
Absolute 0 in Centigrade (-273.15 @math{^o}C)
@item echarge
@ -7151,10 +7096,11 @@ Linux janus.wayout.net 2.4.20 #1 SMP Tue Jun 10 18:58:26 CEST 2003 i686
ngspice 2 ->
@end example
@strong{Note:} This command may not be available on your environment, if
@quotation Note
This command may not be available on your environment, if
it is not available, please send analogous information when submitting
bug reports.
@end quotation
@node Tf, Trace, Stop, Commands
@subsection Tf*: Run a Transfer Function analysis
@ -8756,29 +8702,29 @@ and model, but are provided as a quick reference guide.
---------------------------------------------------------------------------
| BSIM1 - model input-output parameters - continued |
|--------------------------------------------------------------------------+
|tox Gate oxide thickness in um |
|temp Temperature in degree Celsius |
|vdd Supply voltage to specify mus |
|cgso Gate source overlap capacitance per unit channel width(m) |
---------------------------------------------------------------------------
|cgdo Gate drain overlap capacitance per unit channel width(m) |
|cgbo Gate bulk overlap capacitance per unit channel length(m) |
|xpart Flag for channel charge partitioning |
|rsh Source drain diffusion sheet resistance in ohm per square |
|--------------------------------------------------------------------------+
|js Source drain junction saturation current per unit area |
|pb Source drain junction built in potential |
mj Source drain bottom junction capacitance grading coefficient
|pbsw Source drain side junction capacitance built in potential |
---------------------------------------------------------------------------
|mjsw Source drain side junction capacitance grading coefficient |
|cj Source drain bottom junction capacitance per unit area |
|cjsw Source drain side junction capacitance per unit area |
|wdf Default width of source drain diffusion in um |
|dell Length reduction of source drain diffusion |
---------------------------------------------------------------------------
| BSIM1 - model input-output parameters - continued |
|-----------------------------------------------------------------------+
|tox Gate oxide thickness in um |
|temp Temperature in degree Celsius |
|vdd Supply voltage to specify mus |
|cgso Gate source overlap capacitance per unit channel width(m) |
------------------------------------------------------------------------
|cgdo Gate drain overlap capacitance per unit channel width(m) |
|cgbo Gate bulk overlap capacitance per unit channel length(m) |
|xpart Flag for channel charge partitioning |
|rsh Source drain diffusion sheet resistance in ohm per square |
|-----------------------------------------------------------------------+
|js Source drain junction saturation current per unit area |
|pb Source drain junction built in potential |
|mj Source drain bottom junction capacitance grading coefficient
|pbsw Source drain side junction capacitance built in potential |
------------------------------------------------------------------------
|mjsw Source drain side junction capacitance grading coefficient |
|cj Source drain bottom junction capacitance per unit area |
|cjsw Source drain side junction capacitance per unit area |
|wdf Default width of source drain diffusion in um |
|dell Length reduction of source drain diffusion |
------------------------------------------------------------------------
@end example