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clear separation between geometry and temperature scaling

This commit is contained in:
dwarning 2020-07-05 22:16:28 +02:00
parent 90ab76d876
commit 4bb09b35c3
5 changed files with 144 additions and 176 deletions
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4
src/spicelib/devices/hicum2/hicum2ask.c
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@ -214,13 +214,13 @@ HICUMask(CKTcircuit *ckt, GENinstance *instPtr, int which, IFvalue *value, IFval
value->rValue = here->HICUMcapjei + here->HICUMcapdeix;
return(OK);
case HICUM_QUEST_CPIX:
value->rValue = here->HICUMcapjep + here->HICUMcbepar;
value->rValue = here->HICUMcapjep + here->HICUMcbepar_scaled;
return(OK);
case HICUM_QUEST_CMUI:
value->rValue = here->HICUMcapjci + here->HICUMcapdci;
return(OK);
case HICUM_QUEST_CMUX:
value->rValue = here->HICUMcapjcx_t_i + here->HICUMcapjcx_t_ii + here->HICUMcbcpar + here->HICUMcapdsu;
value->rValue = here->HICUMcapjcx_t_i + here->HICUMcapjcx_t_ii + here->HICUMcbcpar_scaled + here->HICUMcapdsu;
return(OK);
case HICUM_QUEST_CCS:
value->rValue = here->HICUMcapjs + here->HICUMcapscp;

30
src/spicelib/devices/hicum2/hicum2defs.h
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@ -140,16 +140,31 @@ typedef struct sHICUMinstance {
dual_double HICUMvds_t;
dual_double HICUMvpts_t;
//model variables that depend on "area" and "m" and are needed in load
//model variables that depend on "area" and "m" and are needed in temp
double HICUMqp0_scaled;
double HICUMc10_scaled;
double HICUMicbar_scaled;
double HICUMrth_scaled;
double HICUMcth_scaled;
double HICUMcjei0_scaled;
double HICUMibeis_scaled;
double HICUMireis_scaled;
double HICUMibeps_scaled;
double HICUMireps_scaled;
double HICUMcjep0_scaled;
double HICUMcbepar_scaled;
double HICUMibets_scaled;
double HICUMibcis_scaled;
double HICUMcjci0_scaled;
double HICUMcjcx0_scaled;
double HICUMicbar_scaled;
double HICUMcbepar_scaled;
double HICUMcbcpar_scaled;
double HICUMcth_scaled;
double HICUMrth_scaled;
double HICUMibcxs_scaled;
double HICUMqavl_scaled;
double HICUMre_scaled;
double HICUMrci0_scaled;
double HICUMibets_scaled;
double HICUMrbx_scaled;
double HICUMrcx_scaled;
double HICUMrbi0_scaled;
double HICUMrbi;
double HICUMiavl;
@ -158,9 +173,6 @@ typedef struct sHICUMinstance {
double HICUMtf;
double HICUMick;
double HICUMcbepar;
double HICUMcbcpar;
double *HICUMcollCollPtr; /* pointer to sparse matrix at
* (collector,collector) */
double *HICUMbaseBasePtr; /* pointer to sparse matrix at

57
src/spicelib/devices/hicum2/hicum2setup.c
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@ -498,6 +498,63 @@ HICUMsetup(SMPmatrix *matrix, GENmodel *inModel, CKTcircuit *ckt, int *states)
here->HICUMdtemp = 0.0;
}
// Warning:
// The scaling with HICUMm and HICUMarea is done here from model to here variables in order to save memory.
// Classical spice scaling with "area" is implemented, but it is not recommended to be used. If you want
// scaling, more sophisticated expressions should be used. Those can be found in modern PDKs or should be
// provided by modeling engineers.
// For discrete devices, the multiplication factor "m" should give reasonable results.
//
// The HICUMm device multiplicaton factor can be exected to give good results.
// The following variables need scaling in HICUM:
// IT : qp0 ~ (area m)**2 qp0 ~ area m icbar ~ area m
// BE junction: cjei0 ~ area m cjep0 ~ m
// ibeis ~ area m ibeps ~ m
// cbepar ~ m -> area scaling not reasonable
// BC junction: cjci0 ~ area m cjcx0 ~ m
// ibcis ~ area m ibcxs ~ m
// ireis ~ area m ireps ~ m
// cbcpar ~ m -> area scaling not reasonable
// qavl ~ area m
// re ~1/(area*m)
// rci0 ~1/(area*m)
// rbx ~1/(area*m) -> assume that scaling with "area" is due to lE0 increase
// rcx ~1/(area*m) -> assume that scaling with "area" is due to lE0 increase
// rbi0 ~1/(area*m) -> assume that scaling with "area" is due to lE0 increase
// rth ~1/(area*m) -> bad assumption, but more transistor geometry needs to be known for accurate scaling
// cth ~ area*m -> bad assumption, but more transistor geometry needs to be known for accurate scaling
// Substrate related parameters not scaled on purpose. This is very geometry dependent?
double area_times_m = here->HICUMm*here->HICUMarea;
//IT
here->HICUMqp0_scaled = model->HICUMqp0 * area_times_m;
here->HICUMc10_scaled = model->HICUMc10 * area_times_m*area_times_m;
here->HICUMicbar_scaled = model->HICUMicbar * area_times_m;
here->HICUMrth_scaled = model->HICUMrth / area_times_m; //very poor assumption
here->HICUMcth_scaled = model->HICUMcth * area_times_m; //very poor assumption
//BE junction
here->HICUMcjei0_scaled = model->HICUMcjei0 * area_times_m;
here->HICUMibeis_scaled = model->HICUMibeis * area_times_m;
here->HICUMireis_scaled = model->HICUMireis * area_times_m;
here->HICUMibeps_scaled = model->HICUMibeps * here->HICUMm;
here->HICUMireps_scaled = model->HICUMireps * here->HICUMm;
here->HICUMcjep0_scaled = model->HICUMcjep0 * here->HICUMm;
here->HICUMcbepar_scaled = model->HICUMcbepar * here->HICUMm;
here->HICUMibets_scaled = model->HICUMibets * area_times_m;
//BC junction
here->HICUMibcis_scaled = model->HICUMibcis * area_times_m;
here->HICUMcjci0_scaled = model->HICUMcjci0 * area_times_m;
here->HICUMcjcx0_scaled = model->HICUMcjcx0 * here->HICUMm;
here->HICUMcbcpar_scaled = model->HICUMcbcpar * here->HICUMm;
here->HICUMibcxs_scaled = model->HICUMibcxs * here->HICUMm;
here->HICUMqavl_scaled = model->HICUMqavl * area_times_m;
//resistances
here->HICUMre_scaled = model->HICUMre / area_times_m;
here->HICUMrci0_scaled = model->HICUMrci0 / area_times_m;
here->HICUMrbx_scaled = model->HICUMrbx / area_times_m;
here->HICUMrcx_scaled = model->HICUMrcx / area_times_m;
here->HICUMrbi0_scaled = model->HICUMrbi0 / area_times_m;
here->HICUMstate = *states;
*states += HICUMnumStates;

51
src/spicelib/devices/hicum2/hicumL2.cpp
View File

@ -1196,31 +1196,9 @@ HICUMload(GENmodel *inModel, CKTcircuit *ckt)
for (; model != NULL; model = HICUMnextModel(model)) {
// Model_initialization
int selfheat = ((model->HICUMflsh > 0) && (model->HICUMrthGiven) && (here->HICUMrth_scaled > 0.0));
int selfheat = ((model->HICUMflsh > 0) && (model->HICUMrthGiven) && (model->HICUMrth > 0.0));
int nqs = ((model->HICUMflnqs != 0 || model->HICUMflcomp == 0.0 || model->HICUMflcomp == 2.1) && (model->HICUMalit > 0 || model->HICUMalqf > 0));
// Depletion capacitance splitting at b-c junction
// Capacitances at peripheral and external base node
C_1 = (1.0 - model->HICUMfbcpar) *
(here->HICUMcjcx0_scaled + here->HICUMcbcpar_scaled);
if (C_1 >= here->HICUMcbcpar_scaled) {
cbcpar1 = here->HICUMcbcpar_scaled;
cbcpar2 = 0.0;
//cjcx01 = C_1 - here->HICUMcbcpar_scaled;
//cjcx02 = model->HICUMcjcx0_scaled - cjcx01; //not needed herein
}
else {
cbcpar1 = C_1;
cbcpar2 = here->HICUMcbcpar_scaled - cbcpar1;
//cjcx01 = 0.0;
//cjcx02 = model->HICUMcjcx0_scaled; //not needed herein
}
// Parasitic b-e capacitance partitioning: No temperature dependence
cbepar2 = model->HICUMfbepar * here->HICUMcbepar_scaled;
cbepar1 = here->HICUMcbepar_scaled - cbepar2;
// Avoid divide-by-zero and define infinity other way
// High current correction for 2D and 3D effects
if (model->HICUMich != 0.0) {
@ -1239,7 +1217,7 @@ HICUMload(GENmodel *inModel, CKTcircuit *ckt)
}
// Turn avalanche calculation on depending of parameters
if ((model->HICUMfavl > 0.0) && (here->HICUMcjci0_scaled > 0.0)) {
if ((model->HICUMfavl > 0.0) && (model->HICUMcjci0 > 0.0)) {
use_aval = 1;
} else {
use_aval = 0;
@ -1251,6 +1229,27 @@ HICUMload(GENmodel *inModel, CKTcircuit *ckt)
for (here = HICUMinstances(model); here != NULL ;
here=HICUMnextInstance(here)) {
// Depletion capacitance splitting at b-c junction
// Capacitances at peripheral and external base node
C_1 = (1.0 - model->HICUMfbcpar) *
(here->HICUMcjcx0_scaled + here->HICUMcbcpar_scaled);
if (C_1 >= here->HICUMcbcpar_scaled) {
cbcpar1 = here->HICUMcbcpar_scaled;
cbcpar2 = 0.0;
//cjcx01 = C_1 - here->HICUMcbcpar_scaled;
//cjcx02 = model->HICUMcjcx0_scaled - cjcx01; //not needed herein
}
else {
cbcpar1 = C_1;
cbcpar2 = here->HICUMcbcpar_scaled - cbcpar1;
//cjcx01 = 0.0;
//cjcx02 = model->HICUMcjcx0_scaled; //not needed herein
}
// Parasitic b-e capacitance partitioning: No temperature dependence
cbepar2 = model->HICUMfbepar * here->HICUMcbepar_scaled;
cbepar1 = here->HICUMcbepar_scaled - cbepar2;
gqbepar1 = 0.0;
gqbepar2 = 0.0;
gqbcpar1 = 0.0;
@ -1258,10 +1257,6 @@ HICUMload(GENmodel *inModel, CKTcircuit *ckt)
gqsu = 0.0;
Icth = 0.0, Icth_Vrth = 0.0;
// Markus: What is this ?
here->HICUMcbepar = here->HICUMcbepar_scaled;
here->HICUMcbcpar = here->HICUMcbcpar_scaled;
/*
* initialization
*/

178
src/spicelib/devices/hicum2/hicumL2temp.cpp
View File

@ -140,104 +140,8 @@ int hicum_thermal_update(HICUMmodel *inModel, HICUMinstance *inInstance, double
double Tnom, zetatef, cjcx01, cjcx02, C_1;
duals::duald cjei0_t, vdei_t, cjep0_t, vdep_t;
//variable for area and m scaling
double area_times_m;
double qp0_scaled ;
double c10_scaled ;
double icbar_scaled;
double cjei0_scaled;
double ibeis_scaled;
double ireis_scaled;
double ibeps_scaled;
double ibcxs_scaled;
double ireps_scaled;
double cjep0_scaled;
double cbepar_scaled;
double ibcis_scaled;
double cjci0_scaled;
double cjcx0_scaled;
double cbcpar_scaled;
double qavl_scaled ;
double re_scaled ;
double rci0_scaled ;
double rbx_scaled ;
double rcx_scaled ;
double rbi0_scaled ;
double rth_scaled ;
double cth_scaled ;
double ibets_scaled ;
// double cjci0_t, vdci_t, vptci_t, cjep0_t, vdep_t, ajep_t, vdcx_t, vptcx_t, cscp0_t, vdsp_t, vptsp_t, cjs0_t, vds_t, vpts_t;
// Warning:
// The scaling with HICUMm and HICUMarea is done here from model to here variables in order to save memory.
// Classical spice scaling with "area" is implemented, but it is not recommended to be used. If you want
// scaling, more sophisticated expressions should be used. Those can be found in modern PDKs or should be
// provided by modeling engineers.
// For discrete devices, the multiplication factor "m" should give reasonable results.
//
// The HICUMm device multiplicaton factor can be exected to give good results.
// The following variables need scaling in HICUM:
// IT : qp0 ~ (area m)**2 qp0 ~ area m icbar ~ area m
// BE junction: cjei0 ~ area m cjep0 ~ m
// ibeis ~ area m ibeps ~ m
// cbepar ~ m -> area scaling not reasonable
// BC junction: cjci0 ~ area m cjcx0 ~ m
// ibcis ~ area m ibcxs ~ m
// ireis ~ area m ireps ~ m
// cbcpar ~ m -> area scaling not reasonable
// qavl ~ area m
// re ~1/(area*m)
// rci0 ~1/(area*m)
// rbx ~1/(area*m) -> assume that scaling with "area" is due to lE0 increase
// rcx ~1/(area*m) -> assume that scaling with "area" is due to lE0 increase
// rbi0 ~1/(area*m) -> assume that scaling with "area" is due to lE0 increase
// rth ~1/(area*m) -> bad assumption, but more transistor geometry needs to be known for accurate scaling
// cth ~ area*m -> bad assumption, but more transistor geometry needs to be known for accurate scaling
// Substrate related parameters not scaled on purpose. This is very geometry dependent?
area_times_m = here->HICUMm*here->HICUMarea;
//IT
qp0_scaled = model->HICUMqp0 * area_times_m;
c10_scaled = model->HICUMc10 * area_times_m*area_times_m;
icbar_scaled = model->HICUMicbar * area_times_m;
rth_scaled = model->HICUMrth / area_times_m; //very poor assumption
cth_scaled = model->HICUMcth * area_times_m; //very poor assumption
//BE junction
cjei0_scaled = model->HICUMcjei0 * area_times_m;
ibeis_scaled = model->HICUMibeis * area_times_m;
ireis_scaled = model->HICUMireis * area_times_m;
ibeps_scaled = model->HICUMibeps * here->HICUMm;
ireps_scaled = model->HICUMireps * here->HICUMm;
cjep0_scaled = model->HICUMcjep0 * here->HICUMm;
cbepar_scaled = model->HICUMcbepar * here->HICUMm;
ibets_scaled = model->HICUMibets * area_times_m;
//BC junction
ibcis_scaled = model->HICUMibcis * area_times_m;
cjci0_scaled = model->HICUMcjci0 * area_times_m;
cjcx0_scaled = model->HICUMcjcx0 * here->HICUMm;
cbcpar_scaled = model->HICUMcbcpar * here->HICUMm;
ibcxs_scaled = model->HICUMibcxs * here->HICUMm;
qavl_scaled = model->HICUMqavl * area_times_m;
//resistances
re_scaled = model->HICUMre / area_times_m;
rci0_scaled = model->HICUMrci0 / area_times_m;
rbx_scaled = model->HICUMrbx / area_times_m;
rcx_scaled = model->HICUMrcx / area_times_m;
rbi0_scaled = model->HICUMrbi0 / area_times_m;
// These model variables depend on on scale.
// They are put into the here struct for usage in load routine.
here->HICUMicbar_scaled = icbar_scaled;
here->HICUMcbepar_scaled = cbepar_scaled;
here->HICUMcbcpar_scaled = cbcpar_scaled;
here->HICUMcth_scaled = cth_scaled;
here->HICUMibets_scaled = ibets_scaled;
here->HICUMrci0_scaled = rci0_scaled;
here->HICUMrth_scaled = rth_scaled;
here->HICUMcjcx0_scaled = cjcx0_scaled;
here->HICUMcjci0_scaled = cjci0_scaled;
Tnom = model->HICUMtnom;
k10 = model->HICUMf1vg*Tnom*log(Tnom);
k20 = model->HICUMf2vg*Tnom;
@ -280,12 +184,12 @@ int hicum_thermal_update(HICUMmodel *inModel, HICUMinstance *inInstance, double
vgbe_t = (vgb_t+vge_t)/2;
here->HICUMtVcrit = here->HICUMvt.rpart *
log(here->HICUMvt.rpart / (CONSTroot2*ibeis_scaled*here->HICUMarea*here->HICUMm));
log(here->HICUMvt.rpart / (CONSTroot2*here->HICUMibeis_scaled));
//Internal b-e junction capacitance
// TMPHICJ(here->HICUMvt0,here->HICUMvt,here->HICUMqtt0,here->HICUMln_qtt0,here->HICUMmg,cjei0_scaled,model->HICUMvdei,model->HICUMzei,model->HICUMajei,1,vgbe0,&here->HICUMcjei0_t,&here->HICUMvdei_t,&here->HICUMajei_t);
hicum_TMPHICJ(vt, here->HICUMvt0, qtt0, ln_qtt0, mg,
cjei0_scaled, model->HICUMvdei, model->HICUMzei, model->HICUMajei, 1, vgbe0,
here->HICUMcjei0_scaled, model->HICUMvdei, model->HICUMzei, model->HICUMajei, 1, vgbe0,
&here->HICUMcjei0_t.rpart, &here->HICUMvdei_t.rpart, &here->HICUMajei_t.rpart,
&here->HICUMcjei0_t.dpart, &here->HICUMvdei_t.dpart, &here->HICUMajei_t.dpart);
cjei0_t.rpart(here->HICUMcjei0_t.rpart);
@ -299,33 +203,33 @@ int hicum_thermal_update(HICUMmodel *inModel, HICUMinstance *inInstance, double
r_VgVT = V_gT/vt;
//Internal b-e diode saturation currents
a = model->HICUMmcf*r_VgVT/model->HICUMmbei - model->HICUMalb*dT;
a = ibeis_scaled*exp(a);
a = here->HICUMibeis_scaled*exp(a);
here->HICUMibeis_t.rpart = a.rpart();
here->HICUMibeis_t.dpart = a.dpart();
a = model->HICUMmcf*r_VgVT/model->HICUMmrei - model->HICUMalb*dT;
a = ireis_scaled*exp(a);
a = here->HICUMireis_scaled*exp(a);
here->HICUMireis_t.rpart = a.rpart();
here->HICUMireis_t.dpart = a.dpart();
//Peripheral b-e diode saturation currents
a = model->HICUMmcf*r_VgVT/model->HICUMmbep - model->HICUMalb*dT;
a = ibeps_scaled*exp(a);
a = here->HICUMibeps_scaled*exp(a);
here->HICUMibeps_t.rpart = a.rpart();
here->HICUMibeps_t.dpart = a.dpart();
a = model->HICUMmcf*r_VgVT/model->HICUMmrep - model->HICUMalb*dT;
a = ireps_scaled*exp(a);
a = here->HICUMireps_scaled*exp(a);
here->HICUMireps_t.rpart = a.rpart();
here->HICUMireps_t.dpart = a.dpart();
//Internal b-c diode saturation current
a = r_VgVT/model->HICUMmbci;
a = ibcis_scaled*exp(a);
a = here->HICUMibcis_scaled*exp(a);
here->HICUMibcis_t.rpart = a.rpart();
here->HICUMibcis_t.dpart = a.dpart();
//External b-c diode saturation currents
a = r_VgVT/model->HICUMmbcx;
a = ibcxs_scaled*exp(a);
a = here->HICUMibcxs_scaled*exp(a);
here->HICUMibcxs_t.rpart = a.rpart();
here->HICUMibcxs_t.dpart = a.dpart();
//Saturation transfer current for substrate transistor
@ -340,7 +244,7 @@ int hicum_thermal_update(HICUMmodel *inModel, HICUMinstance *inInstance, double
here->HICUMiscs_t.dpart = a.dpart();
//Zero bias hole charge
a = vdei_t/model->HICUMvdei;
a = qp0_scaled*(1.0+0.5*model->HICUMzei*(1.0-a));
a = here->HICUMqp0_scaled*(1.0+0.5*model->HICUMzei*(1.0-a));
here->HICUMqp0_t.rpart = a.rpart();
here->HICUMqp0_t.dpart = a.dpart();
//Voltage separating ohmic and saturation velocity regime
@ -360,33 +264,33 @@ int hicum_thermal_update(HICUMmodel *inModel, HICUMinstance *inInstance, double
here->HICUMtef0_t.dpart = a.dpart();
} else {
//Internal b-e diode saturation currents
a = ibeis_scaled*exp(model->HICUMzetabet*ln_qtt0+model->HICUMvge/vt*(qtt0-1));
a = here->HICUMibeis_scaled*exp(model->HICUMzetabet*ln_qtt0+model->HICUMvge/vt*(qtt0-1));
here->HICUMibeis_t.rpart = a.rpart();
here->HICUMibeis_t.dpart = a.dpart();
if (model->HICUMflcomp>=2.3) {
a = ireis_scaled*exp(mg/model->HICUMmrei*ln_qtt0+vgbe0/(model->HICUMmrei*vt)*(qtt0-1));
a = here->HICUMireis_scaled*exp(mg/model->HICUMmrei*ln_qtt0+vgbe0/(model->HICUMmrei*vt)*(qtt0-1));
} else {
a = ireis_scaled*exp(0.5*mg*ln_qtt0+0.5*vgbe0/vt*(qtt0-1));
a = here->HICUMireis_scaled*exp(0.5*mg*ln_qtt0+0.5*vgbe0/vt*(qtt0-1));
}
here->HICUMireis_t.rpart = a.rpart();
here->HICUMireis_t.dpart = a.dpart();
//Peripheral b-e diode saturation currents
a = ibeps_scaled*exp(model->HICUMzetabet*ln_qtt0+model->HICUMvge/vt*(qtt0-1));
a = here->HICUMibeps_scaled*exp(model->HICUMzetabet*ln_qtt0+model->HICUMvge/vt*(qtt0-1));
here->HICUMibeps_t.rpart = a.rpart();
here->HICUMibeps_t.dpart = a.dpart();
if (model->HICUMflcomp>=2.3) {
a = ireps_scaled*exp(mg/model->HICUMmrep*ln_qtt0+vgbe0/(model->HICUMmrep*vt)*(qtt0-1));
a = here->HICUMireps_scaled*exp(mg/model->HICUMmrep*ln_qtt0+vgbe0/(model->HICUMmrep*vt)*(qtt0-1));
} else {
a = ireps_scaled*exp(0.5*mg*qtt0+0.5*vgbe0/vt*(qtt0-1));
a = here->HICUMireps_scaled*exp(0.5*mg*qtt0+0.5*vgbe0/vt*(qtt0-1));
}
here->HICUMireps_t.rpart = a.rpart();
here->HICUMireps_t.dpart = a.dpart();
//Internal b-c diode saturation currents
a = ibcis_scaled*exp(zetabci*ln_qtt0+model->HICUMvgc/vt*(qtt0-1));
a = here->HICUMibcis_scaled*exp(zetabci*ln_qtt0+model->HICUMvgc/vt*(qtt0-1));
here->HICUMibcis_t.rpart = a.rpart();
here->HICUMibcis_t.dpart = a.dpart();
//External b-c diode saturation currents
a = ibcxs_scaled*exp(zetabcxt*ln_qtt0+model->HICUMvgc/vt*(qtt0-1));
a = here->HICUMibcxs_scaled*exp(zetabcxt*ln_qtt0+model->HICUMvgc/vt*(qtt0-1));
here->HICUMibcxs_t.rpart = a.rpart();
here->HICUMibcxs_t.dpart = a.dpart();
//Saturation transfer current for substrate transistor
@ -399,7 +303,7 @@ int hicum_thermal_update(HICUMmodel *inModel, HICUMinstance *inInstance, double
here->HICUMiscs_t.dpart = a.dpart();
//Zero bias hole charge
a = exp(model->HICUMzei*log(vdei_t/model->HICUMvdei));
a = qp0_scaled*(2.0-a);
a = here->HICUMqp0_scaled*(2.0-a);
here->HICUMqp0_t.rpart = a.rpart();
here->HICUMqp0_t.dpart = a.dpart();
//Voltage separating ohmic and saturation velocity regime
@ -419,12 +323,12 @@ int hicum_thermal_update(HICUMmodel *inModel, HICUMinstance *inInstance, double
}
//GICCR prefactor
a = c10_scaled*exp(model->HICUMzetact*ln_qtt0+model->HICUMvgb/vt*(qtt0-1));
a = here->HICUMc10_scaled*exp(model->HICUMzetact*ln_qtt0+model->HICUMvgb/vt*(qtt0-1));
here->HICUMc10_t.rpart = a.rpart();
here->HICUMc10_t.dpart = a.dpart();
// Low-field internal collector resistance
a = rci0_scaled*exp(model->HICUMzetaci*ln_qtt0);
a = here->HICUMrci0_scaled*exp(model->HICUMzetaci*ln_qtt0);
here->HICUMrci0_t.rpart = a.rpart();
here->HICUMrci0_t.dpart = a.dpart();
@ -436,7 +340,7 @@ int hicum_thermal_update(HICUMmodel *inModel, HICUMinstance *inInstance, double
//Internal b-c junction capacitance
// TMPHICJ(here->HICUMvt0,here->HICUMvt,here->HICUMqtt0,here->HICUMln_qtt0,here->HICUMmg,cjci0_scaled,model->HICUMvdci,model->HICUMzci,model->HICUMvptci,0,vgbc0,&cjci0_t,&vdci_t,&vptci_t);
hicum_TMPHICJ(vt, here->HICUMvt0, qtt0, ln_qtt0, mg,
cjci0_scaled, model->HICUMvdci, model->HICUMzci, model->HICUMvptci, 0, vgbc0,
here->HICUMcjci0_scaled, model->HICUMvdci, model->HICUMzci, model->HICUMvptci, 0, vgbc0,
&here->HICUMcjci0_t.rpart, &here->HICUMvdci_t.rpart, &here->HICUMvptci_t.rpart,
&here->HICUMcjci0_t.dpart, &here->HICUMvdci_t.dpart, &here->HICUMvptci_t.dpart);
@ -454,7 +358,7 @@ int hicum_thermal_update(HICUMmodel *inModel, HICUMinstance *inInstance, double
a = model->HICUMfavl*exp(model->HICUMalfav*dT);
here->HICUMfavl_t.rpart = a.rpart();
here->HICUMfavl_t.dpart = a.dpart();
a = qavl_scaled*exp(model->HICUMalqav*dT);
a = here->HICUMqavl_scaled*exp(model->HICUMalqav*dT);
here->HICUMqavl_t.rpart = a.rpart();
here->HICUMqavl_t.dpart = a.dpart();
a = model->HICUMkavl*exp(model->HICUMalkav*dT);
@ -462,14 +366,14 @@ int hicum_thermal_update(HICUMmodel *inModel, HICUMinstance *inInstance, double
here->HICUMkavl_t.dpart = a.dpart();
//Zero bias internal base resistance
a = rbi0_scaled*exp(model->HICUMzetarbi*ln_qtt0);
a = here->HICUMrbi0_scaled*exp(model->HICUMzetarbi*ln_qtt0);
here->HICUMrbi0_t.rpart = a.rpart();
here->HICUMrbi0_t.dpart = a.dpart();
//Peripheral b-e junction capacitance
// TMPHICJ(here->HICUMvt0,here->HICUMvt,here->HICUMqtt0,here->HICUMln_qtt0,here->HICUMmg,cjep0_scaled,model->HICUMvdep,model->HICUMzep,model->HICUMajep,1,vgbe0,&cjep0_t,&vdep_t,&ajep_t);
hicum_TMPHICJ(vt, here->HICUMvt0, qtt0, ln_qtt0, mg,
cjep0_scaled, model->HICUMvdep, model->HICUMzep, model->HICUMajep, 1, vgbe0,
here->HICUMcjep0_scaled, model->HICUMvdep, model->HICUMzep, model->HICUMajep, 1, vgbe0,
&here->HICUMcjep0_t.rpart, &here->HICUMvdep_t.rpart, &here->HICUMajep_t.rpart,
&here->HICUMcjep0_t.dpart, &here->HICUMvdep_t.dpart, &here->HICUMajep_t.dpart);
cjep0_t.rpart(here->HICUMcjep0_t.rpart);
@ -478,19 +382,19 @@ int hicum_thermal_update(HICUMmodel *inModel, HICUMinstance *inInstance, double
vdep_t.dpart(here->HICUMvdep_t.dpart);
//Tunneling current factors
if (ibets_scaled > 0) { // HICTUN_T
if (here->HICUMibets_scaled > 0) { // HICTUN_T
duals::duald a_eg,ab,aa;
ab = 1.0;
aa = 1.0;
a_eg = vgbe_t0/vgbe_t;
if(model->HICUMtunode==1 && cjep0_scaled > 0.0 && model->HICUMvdep >0.0) {
ab = (cjep0_t/cjep0_scaled)*sqrt(a_eg)*vdep_t*vdep_t/(model->HICUMvdep*model->HICUMvdep);
aa = (model->HICUMvdep/vdep_t)*(cjep0_scaled/cjep0_t)*pow(a_eg,-1.5);
} else if (model->HICUMtunode==0 && cjei0_scaled > 0.0 && model->HICUMvdei >0.0) {
ab = (cjei0_t/cjei0_scaled)*sqrt(a_eg)*vdei_t*vdei_t/(model->HICUMvdei*model->HICUMvdei);
aa = (model->HICUMvdei/vdei_t)*(cjei0_scaled/cjei0_t)*pow(a_eg,-1.5);
if(model->HICUMtunode==1 && here->HICUMcjep0_scaled > 0.0 && model->HICUMvdep >0.0) {
ab = (cjep0_t/here->HICUMcjep0_scaled)*sqrt(a_eg)*vdep_t*vdep_t/(model->HICUMvdep*model->HICUMvdep);
aa = (model->HICUMvdep/vdep_t)*(here->HICUMcjep0_scaled/cjep0_t)*pow(a_eg,-1.5);
} else if (model->HICUMtunode==0 && here->HICUMcjei0_scaled > 0.0 && model->HICUMvdei >0.0) {
ab = (cjei0_t/here->HICUMcjei0_scaled)*sqrt(a_eg)*vdei_t*vdei_t/(model->HICUMvdei*model->HICUMvdei);
aa = (model->HICUMvdei/vdei_t)*(here->HICUMcjei0_scaled/cjei0_t)*pow(a_eg,-1.5);
}
a = ibets_scaled*ab;
a = here->HICUMibets_scaled*ab;
here->HICUMibets_t.rpart = a.rpart();
here->HICUMibets_t.dpart = a.dpart();
a = model->HICUMabet*aa;
@ -505,13 +409,13 @@ int hicum_thermal_update(HICUMmodel *inModel, HICUMinstance *inInstance, double
//Depletion capacitance splitting at b-c junction
//Capacitances at peripheral and external base node
C_1 = (1.0-model->HICUMfbcpar)*(cjcx0_scaled+cbcpar_scaled);
if (C_1 >= cbcpar_scaled) {
cjcx01 = C_1-cbcpar_scaled;
cjcx02 = cjcx0_scaled-cjcx01;
C_1 = (1.0-model->HICUMfbcpar)*(here->HICUMcjcx0_scaled+here->HICUMcbcpar_scaled);
if (C_1 >= here->HICUMcbcpar_scaled) {
cjcx01 = C_1-here->HICUMcbcpar_scaled;
cjcx02 = here->HICUMcjcx0_scaled-cjcx01;
} else {
cjcx01 = 0.0;
cjcx02 = cjcx0_scaled;
cjcx02 = here->HICUMcjcx0_scaled;
}
//Temperature mapping for tunneling current is done inside HICTUN
@ -530,13 +434,13 @@ int hicum_thermal_update(HICUMmodel *inModel, HICUMinstance *inInstance, double
here->HICUMcjcx02_t.dpart = a.dpart();
//Constant external series resistances
a = rcx_scaled*exp(model->HICUMzetarcx*ln_qtt0);
a = here->HICUMrcx_scaled*exp(model->HICUMzetarcx*ln_qtt0);
here->HICUMrcx_t.rpart = a.rpart();
here->HICUMrcx_t.dpart = a.dpart();
a = rbx_scaled*exp(model->HICUMzetarbx*ln_qtt0);
a = here->HICUMrbx_scaled*exp(model->HICUMzetarbx*ln_qtt0);
here->HICUMrbx_t.rpart = a.rpart();
here->HICUMrbx_t.dpart = a.dpart();
a = re_scaled*exp(model->HICUMzetare*ln_qtt0);
a = here->HICUMre_scaled*exp(model->HICUMzetare*ln_qtt0);
here->HICUMre_t.rpart = a.rpart();
here->HICUMre_t.dpart = a.dpart();
@ -594,7 +498,7 @@ int hicum_thermal_update(HICUMmodel *inModel, HICUMinstance *inInstance, double
here->HICUMhfc_t.dpart = 0;
}
a = rth_scaled*exp(model->HICUMzetarth*ln_qtt0)*(1+model->HICUMalrth*dT);
a = here->HICUMrth_scaled*exp(model->HICUMzetarth*ln_qtt0)*(1+model->HICUMalrth*dT);
here->HICUMrth_t.rpart = a.rpart();
here->HICUMrth_t.dpart = a.dpart();