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VDMOS: use effektive Gatespannung for mobility reduction of Beta
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@@ -364,7 +364,7 @@ VDMOSload(GENmodel *inModel, CKTcircuit *ckt)
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/* scale vds with mtr (except with lambda) */
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double vdss = vds*mtr*here->VDMOSmode;
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double t0 = 1 + lambda*vds;
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double t1 = 1 + theta*vgs;
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double t1 = 1 + theta*vgst;
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double betap = Beta*t0/t1;
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double dbetapdvgs = -Beta*theta*t0/(t1*t1);
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double dbetapdvds = Beta*lambda/t1;
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