106 lines
3.1 KiB
Plaintext
106 lines
3.1 KiB
Plaintext
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BICMOS INVERTER PULLUP CIRCUIT
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VDD 1 0 5.0V
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VSS 2 0 0.0V
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VIN 3 0 0.75V
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VC 1 11 0.0V
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VB 5 15 0.0V
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Q1 11 15 4 M_NPNS AREA=8
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M1 5 3 1 1 M_PMOS_1 W=10U L=1U
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CL 4 0 5.0PF
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.IC V(4)=0.75V V(5)=0.0V
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.MODEL M_NPNS nbjt level=2
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+ title TWO-DIMENSIONAL NUMERICAL POLYSILICON EMITTER BIPOLAR TRANSISTOR
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+ * Since half the device is simulated, double the unit width to get
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+ * 1.0 um emitter. Use a small mesh for this model.
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+ options defw=2.0u
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+
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+ x.mesh w=2.0 h.e=0.02 h.m=0.5 r=2.0
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+ x.mesh w=0.5 h.s=0.02 h.m=0.2 r=2.0
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+
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+ y.mesh l=-0.2 n=1
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+ y.mesh l= 0.0 n=5
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+ y.mesh w=0.10 h.e=0.004 h.m=0.05 r=2.5
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+ y.mesh w=0.15 h.s=0.004 h.m=0.02 r=2.5
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+ y.mesh w=1.05 h.s=0.02 h.m=0.1 r=2.5
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+
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+ domain num=1 material=1 x.l=2.0 y.h=0.0
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+ domain num=2 material=2 x.h=2.0 y.h=0.0
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+ domain num=3 material=3 y.l=0.0
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+ material num=1 polysilicon
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+ material num=2 oxide
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+ material num=3 silicon
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+
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+ elec num=1 x.l=0.0 x.h=0.0 y.l=1.1 y.h=1.3
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+ elec num=2 x.l=0.0 x.h=0.5 y.l=0.0 y.h=0.0
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+ elec num=3 x.l=2.0 x.h=3.0 y.l=-0.2 y.h=-0.2
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+
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+ doping gauss n.type conc=3e20 x.l=2.0 x.h=3.0 y.l=-0.2 y.h=0.0
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+ + char.l=0.047 lat.rotate
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+ doping gauss p.type conc=5e18 x.l=0.0 x.h=5.0 y.l=-0.2 y.h=0.0
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+ + char.l=0.100 lat.rotate
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+ doping gauss p.type conc=1e20 x.l=0.0 x.h=0.5 y.l=-0.2 y.h=0.0
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+ + char.l=0.100 lat.rotate ratio=0.7
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+ doping unif n.type conc=1e16 x.l=0.0 x.h=5.0 y.l=0.0 y.h=1.3
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+ doping gauss n.type conc=5e19 x.l=0.0 x.h=5.0 y.l=1.3 y.h=1.3
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+ + char.l=0.100 lat.rotate
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+
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+ method ac=direct itlim=10
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+ models bgn srh auger conctau concmob fieldmob
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.MODEL M_PMOS_1 numos
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+
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+ x.mesh w=0.9 h.e=0.020 h.m=0.2 r=2.0
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+ x.mesh w=0.2 h.e=0.005 h.m=0.02 r=2.0
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+ x.mesh w=0.4 h.s=0.005 h.m=0.1 r=2.0
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+ x.mesh w=0.4 h.e=0.005 h.m=0.1 r=2.0
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+ x.mesh w=0.2 h.e=0.005 h.m=0.02 r=2.0
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+ x.mesh w=0.9 h.s=0.020 h.m=0.2 r=2.0
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+
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+ y.mesh l=-.0200 n=1
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+ y.mesh l=0.0 n=6
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+ y.mesh w=0.15 h.s=0.0001 h.max=.02 r=2.0
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+ y.mesh w=0.45 h.s=0.02 h.max=0.2 r=2.0
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+ y.mesh w=1.40 h.s=0.20 h.max=0.4 r=2.0
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+
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+ region num=1 material=1 y.h=0.0
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+ region num=2 material=2 y.l=0.0
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+ interface dom=2 nei=1 x.l=1 x.h=2 layer.width=0.0
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+ material num=1 oxide
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+ material num=2 silicon
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+
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+ elec num=1 x.l=2.5 x.h=3.1 y.l=0.0 y.h=0.0
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+ elec num=2 x.l=1 x.h=2 iy.l=1 iy.h=1
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+ elec num=3 x.l=-0.1 x.h=0.5 y.l=0.0 y.h=0.0
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+ elec num=4 x.l=-0.1 x.h=3.1 y.l=2.0 y.h=2.0
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+
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+ doping gauss n.type conc=1.0e17 x.l=-0.1 x.h=3.1 y.l=0.0
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+ + char.l=0.30
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+ doping unif n.type conc=5.0e15 x.l=-0.1 x.h=3.1 y.l=0.0 y.h=2.1
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+ doping gauss p.type conc=4e17 x.l=-0.1 x.h=1 y.l=0.0 y.h=0.0
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+ + char.l=0.16 lat.rotate ratio=0.65
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+ doping gauss p.type conc=1e20 x.l=-0.1 x.h=0.95 y.l=0.0 y.h=0.08
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+ + char.l=0.03 lat.rotate ratio=0.65
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+ doping gauss p.type conc=4e17 x.l=2 x.h=3.1 y.l=0.0 y.h=0.0
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+ + char.l=0.16 lat.rotate ratio=0.65
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+ doping gauss p.type conc=1e20 x.l=2.05 x.h=3.1 y.l=0.0 y.h=0.08
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+ + char.l=0.03 lat.rotate ratio=0.65
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+
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+ contact num=2 workf=5.29
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+ models concmob surfmob transmob fieldmob srh auger conctau bgn
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+ method ac=direct itlim=10 onec
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.TRAN 0.5NS 3.0NS
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.PRINT TRAN V(3) V(4)
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.PLOT TRAN V(3) V(4)
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* .OPTION ACCT BYPASS=1
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.END
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