BICMOS INVERTER PULLUP CIRCUIT VDD 1 0 5.0V VSS 2 0 0.0V VIN 3 0 0.75V VC 1 11 0.0V VB 5 15 0.0V Q1 11 15 4 M_NPNS AREA=8 M1 5 3 1 1 M_PMOS_1 W=10U L=1U CL 4 0 5.0PF .IC V(4)=0.75V V(5)=0.0V .MODEL M_NPNS nbjt level=2 + title TWO-DIMENSIONAL NUMERICAL POLYSILICON EMITTER BIPOLAR TRANSISTOR + * Since half the device is simulated, double the unit width to get + * 1.0 um emitter. Use a small mesh for this model. + options defw=2.0u + + x.mesh w=2.0 h.e=0.02 h.m=0.5 r=2.0 + x.mesh w=0.5 h.s=0.02 h.m=0.2 r=2.0 + + y.mesh l=-0.2 n=1 + y.mesh l= 0.0 n=5 + y.mesh w=0.10 h.e=0.004 h.m=0.05 r=2.5 + y.mesh w=0.15 h.s=0.004 h.m=0.02 r=2.5 + y.mesh w=1.05 h.s=0.02 h.m=0.1 r=2.5 + + domain num=1 material=1 x.l=2.0 y.h=0.0 + domain num=2 material=2 x.h=2.0 y.h=0.0 + domain num=3 material=3 y.l=0.0 + material num=1 polysilicon + material num=2 oxide + material num=3 silicon + + elec num=1 x.l=0.0 x.h=0.0 y.l=1.1 y.h=1.3 + elec num=2 x.l=0.0 x.h=0.5 y.l=0.0 y.h=0.0 + elec num=3 x.l=2.0 x.h=3.0 y.l=-0.2 y.h=-0.2 + + doping gauss n.type conc=3e20 x.l=2.0 x.h=3.0 y.l=-0.2 y.h=0.0 + + char.l=0.047 lat.rotate + doping gauss p.type conc=5e18 x.l=0.0 x.h=5.0 y.l=-0.2 y.h=0.0 + + char.l=0.100 lat.rotate + doping gauss p.type conc=1e20 x.l=0.0 x.h=0.5 y.l=-0.2 y.h=0.0 + + char.l=0.100 lat.rotate ratio=0.7 + doping unif n.type conc=1e16 x.l=0.0 x.h=5.0 y.l=0.0 y.h=1.3 + doping gauss n.type conc=5e19 x.l=0.0 x.h=5.0 y.l=1.3 y.h=1.3 + + char.l=0.100 lat.rotate + + method ac=direct itlim=10 + models bgn srh auger conctau concmob fieldmob .MODEL M_PMOS_1 numos + + x.mesh w=0.9 h.e=0.020 h.m=0.2 r=2.0 + x.mesh w=0.2 h.e=0.005 h.m=0.02 r=2.0 + x.mesh w=0.4 h.s=0.005 h.m=0.1 r=2.0 + x.mesh w=0.4 h.e=0.005 h.m=0.1 r=2.0 + x.mesh w=0.2 h.e=0.005 h.m=0.02 r=2.0 + x.mesh w=0.9 h.s=0.020 h.m=0.2 r=2.0 + + y.mesh l=-.0200 n=1 + y.mesh l=0.0 n=6 + y.mesh w=0.15 h.s=0.0001 h.max=.02 r=2.0 + y.mesh w=0.45 h.s=0.02 h.max=0.2 r=2.0 + y.mesh w=1.40 h.s=0.20 h.max=0.4 r=2.0 + + region num=1 material=1 y.h=0.0 + region num=2 material=2 y.l=0.0 + interface dom=2 nei=1 x.l=1 x.h=2 layer.width=0.0 + material num=1 oxide + material num=2 silicon + + elec num=1 x.l=2.5 x.h=3.1 y.l=0.0 y.h=0.0 + elec num=2 x.l=1 x.h=2 iy.l=1 iy.h=1 + elec num=3 x.l=-0.1 x.h=0.5 y.l=0.0 y.h=0.0 + elec num=4 x.l=-0.1 x.h=3.1 y.l=2.0 y.h=2.0 + + doping gauss n.type conc=1.0e17 x.l=-0.1 x.h=3.1 y.l=0.0 + + char.l=0.30 + doping unif n.type conc=5.0e15 x.l=-0.1 x.h=3.1 y.l=0.0 y.h=2.1 + doping gauss p.type conc=4e17 x.l=-0.1 x.h=1 y.l=0.0 y.h=0.0 + + char.l=0.16 lat.rotate ratio=0.65 + doping gauss p.type conc=1e20 x.l=-0.1 x.h=0.95 y.l=0.0 y.h=0.08 + + char.l=0.03 lat.rotate ratio=0.65 + doping gauss p.type conc=4e17 x.l=2 x.h=3.1 y.l=0.0 y.h=0.0 + + char.l=0.16 lat.rotate ratio=0.65 + doping gauss p.type conc=1e20 x.l=2.05 x.h=3.1 y.l=0.0 y.h=0.08 + + char.l=0.03 lat.rotate ratio=0.65 + + contact num=2 workf=5.29 + models concmob surfmob transmob fieldmob srh auger conctau bgn + method ac=direct itlim=10 onec .TRAN 0.5NS 3.0NS .PRINT TRAN V(3) V(4) .PLOT TRAN V(3) V(4) * .OPTION ACCT BYPASS=1 .END