ngspice/DEVICES

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DEVICES
-------------------------------------------------------------------------------
This file contains the status of devices available in ng-spice. This
file will be updated every time the device cospecific code is
altered/changed.
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**************************************
********** Linear devices **********
**************************************
CAP - Capacitor
Initial Release
IND - Inductor
Initial Release
RES - Resistor
This is a modified version of the spice3 resistance model. This
model supports different ac and dc values (ac=...). This changes
are introduced by Serban Popescu. The "multiplicity factor" (m)
has been introduced. The "scale factor" has been introduced.
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*)Rework 11: The code has been modified to reflect spice parsing
standard.
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**************************************
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******** Distributed elements ********
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**************************************
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TRA - Transmission line
Initial release
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LTRA - Lossy Transmission line
Initial release
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URC - Uniform distributed RC line
Initial release
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**************************************
********** V/I Sources **********
**************************************
ASRC - Arbitrary Source
Initial Release
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CCCS - Current Controlled Current Source
Initial Release
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CCVS - Current Controlled Voltage Source
Initial Release
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ISRC - Independent Current Source
Initial Release
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VCCS - Voltage Controlled Current Source
Initial Release
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VCVS - Voltage Controlled Voltage Source
Initial Release
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VSRC - Independent Voltage Source
Initial Release
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**************************************
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********* Switches **********
**************************************
CSW - Current controlled switch
Initial release
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SW - Voltage controlled switch
Initial release
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**************************************
********** Diodes **********
**************************************
DIO - Junction Diode
Initial Release
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**************************************
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*********** Bipolar Devices **********
**************************************
BJT - Bipolar Junction Transistor
Initial Relelase
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**************************************
********** FET Devices **********
**************************************
JFET - Junction Field Effect transistor
Initial Release
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JFET2 - Jfet PS model
Initial release. TO BE TESTED
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**************************************
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********* MES devices *********
**************************************
MES - MESfet model
Initial release
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**************************************
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********* MOS devices *********
**************************************
MOS1 - Level 1 MOS model
Initial Release
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MOS2 - Level 2 MOS model
Initial Release
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MOS3 - Level 3 MOS model
Initial Release
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MOS6 - Level 6 MOS model
Initial Release
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BSIM1 - BSIM model level 1
Initial Release
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BSIM2 - BSIM model level 2
Initial Release
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BSIM3 - BSIM model level 3
This is the BSIM3v3.2.2 model from Berkeley device group. You
can find some test netlists with results for this model at
http://www-device.eecs.berkeley.edu/~bsim3.
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BSIM3v1 - BSIM model level 3
This is the BSIM3v3.1 model modified by Serban Popescu. This is
level 49 model. It is an implementation that supports HDIF and M
parameters. Test netlists are available at the URL above. TO BE
TESTED AND IMPROVED.
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BSIM3v2 - BSIM model level 3
This is the BSIM3v3.2 model. It is proved only for compatibility
with existing netlists and parameters files. As always, tests
are availabe on the Berkeley's device group site (at the above
URL).
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BSIM4 - BSIM model level 4 (0.18 um)
Initial Release. TO BE TESTED.
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**************************************
********** SOI Devices *********
**************************************
BSIM3SOI_FD - SOI model (fully depleted devices)
Initial Release Ver: 2.1. TO BE TESTED.
FD model has been integrated as Level = 10
There is a bsim3soifd directory under the test
hierarchy. Test circuits come from the bsim3soi
web site at:
http://www-device.eecs.berkeley.edu/~bsimsoi
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*) rework-14: removed #ifndef NEWCONV code.
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BSIM3SOI_PD - SOI model (partially depleted devices)
Initial Release Ver: 2.2.1. TO BE TESTED.
PD model has been integrated as Level = 9
There is a bsim3soipd directory under the test
hierarchy. Test circuits come from the bsim3soi
web site at:
http://www-device.eecs.berkeley.edu/~bsimsoi
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*) rework-14: removed #ifndef NEWCONV code.
BSIM3SOI_DD - SOI Model (dynamic depletion model)
Initial Release Ver: 2.1. TO BE TESTED.
DD model has been integrated as level= 11
There is a bsim3soidd directory under the
test hierarchy. Test circuits come from bsim3soi
web site at:
http://www-device.eecs.berkeley.edu/~bsimsoi
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*) rework-14: removed #ifndef NEWCONV code.