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Reflected changes in device support

This commit is contained in:
pnenzi 2001-01-24 11:13:10 +00:00
parent 777a922fd8
commit 3a6b1983b7
1 changed files with 15 additions and 10 deletions
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25
DEVICES
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@ -26,9 +26,9 @@ RES - Resistor
standard.
**************************************
**************************************
******** Distributed elements ********
**************************************
**************************************
TRA - Transmission line
Initial release
@ -66,7 +66,7 @@ VSRC - Independent Voltage Source
Initial Release
**************************************
**************************************
********* Switches **********
**************************************
@ -85,7 +85,7 @@ DIO - Junction Diode
Initial Release
**************************************
**************************************
*********** Bipolar Devices **********
**************************************
@ -104,15 +104,15 @@ JFET2 - Jfet PS model
Initial release. TO BE TESTED
**************************************
**************************************
********* MES devices *********
**************************************
MES - MESfet model
Initial release
**************************************
**************************************
********* MOS devices *********
**************************************
@ -161,9 +161,6 @@ BSIM4 - BSIM model level 4 (0.18 um)
**************************************
BSIM3SOI_DD - SOI model (dynamic depletion)
NOT YET IMPLEMENTED.
BSIM3SOI_FD - SOI model (fully depleted devices)
Initial Release Ver: 2.1. TO BE TESTED.
FD model has been integrated as Level = 10
@ -172,6 +169,10 @@ BSIM3SOI_FD - SOI model (fully depleted devices)
web site at:
http://www-device.eecs.berkeley.edu/~bsimsoi
*) rework-14: removed #ifndef NEWCONV code.
BSIM3SOI_PD - SOI model (partially depleted devices)
Initial Release Ver: 2.2.1. TO BE TESTED.
PD model has been integrated as Level = 9
@ -180,6 +181,8 @@ BSIM3SOI_PD - SOI model (partially depleted devices)
web site at:
http://www-device.eecs.berkeley.edu/~bsimsoi
*) rework-14: removed #ifndef NEWCONV code.
BSIM3SOI_DD - SOI Model (dynamic depletion model)
Initial Release Ver: 2.1. TO BE TESTED.
DD model has been integrated as level= 11
@ -187,3 +190,5 @@ BSIM3SOI_DD - SOI Model (dynamic depletion model)
test hierarchy. Test circuits come from bsim3soi
web site at:
http://www-device.eecs.berkeley.edu/~bsimsoi
*) rework-14: removed #ifndef NEWCONV code.