52 lines
1.2 KiB
Plaintext
52 lines
1.2 KiB
Plaintext
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RESISTIVE LOAD NMOS INVERTER
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VIN 1 0 PWL 0 0.0 2NS 5
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VDD 3 0 DC 5.0
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RD 3 2 2.5K
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M1 2 1 4 5 MMOD W=10UM
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CL 2 0 2PF
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VB 5 0 0
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VS 4 0 0
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.MODEL MMOD NUMOS
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+ X.MESH L=0.0 N=1
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+ X.MESH L=0.6 N=4
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+ X.MESH L=0.7 N=5
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+ X.MESH L=1.0 N=7
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+ X.MESH L=1.2 N=11
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+ X.MESH L=3.2 N=21
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+ X.MESH L=3.4 N=25
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+ X.MESH L=3.7 N=27
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+ X.MESH L=3.8 N=28
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+ X.MESH L=4.4 N=31
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+
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+ Y.MESH L=-.05 N=1
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+ Y.MESH L=0.0 N=5
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+ Y.MESH L=.05 N=9
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+ Y.MESH L=0.3 N=14
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+ Y.MESH L=2.0 N=19
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+
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+ REGION NUM=1 MATERIAL=1 Y.L=0.0
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+ MATERIAL NUM=1 SILICON
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+ MOBILITY MATERIAL=1 CONCMOD=SG FIELDMOD=SG
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+
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+ REGION NUM=2 MATERIAL=2 Y.H=0.0 X.L=0.7 X.H=3.7
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+ MATERIAL NUM=2 OXIDE
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+
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+ ELEC NUM=1 X.L=3.8 X.H=4.4 Y.L=0.0 Y.H=0.0
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+ ELEC NUM=2 X.L=0.7 X.H=3.7 IY.L=1 IY.H=1
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+ ELEC NUM=3 X.L=0.0 X.H=0.6 Y.L=0.0 Y.H=0.0
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+ ELEC NUM=4 X.L=0.0 X.H=4.4 Y.L=2.0 Y.H=2.0
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+
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+ DOPING UNIF P.TYPE CONC=2.5E16 X.L=0.0 X.H=4.4 Y.L=0.0 Y.H=2.0
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+ DOPING UNIF P.TYPE CONC=1E16 X.L=0.0 X.H=4.4 Y.L=0.0 Y.H=0.05
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+ DOPING UNIF N.TYPE CONC=1E20 X.L=0.0 X.H=1.1 Y.L=0.0 Y.H=0.2
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+ DOPING UNIF N.TYPE CONC=1E20 X.L=3.3 X.H=4.4 Y.L=0.0 Y.H=0.2
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+
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+ MODELS CONCMOB FIELDMOB
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+ METHOD AC=DIRECT ONEC
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.TRAN 0.2NS 30NS
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.OPTIONS ACCT BYPASS=1
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.PRINT TRAN V(1) V(2)
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.END
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