2018-04-06 00:42:52 +02:00
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README for VDMOS model in NGSPICE
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==================
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A simmple MOS model for vertical power transistors (VDMOS model) is under
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development. Originally it has been available in LTSPICE
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(see http://ltwiki.org/LTspiceHelp/LTspiceHelp/M_MOSFET.htm) or
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SuperSpice (https://www.anasoft.co.uk/MOS1Model.htm).
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It is based on the MOS1 model. The Meyer capacitance has been
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replaced by a special cap model. A body diode with series
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resistance is parallel to the D/S device nodes. It defines the
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reverse behavior, but also the breakdown of the transistor.
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Basic current equations for ac, dc and tran operations are
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2018-04-07 17:59:22 +02:00
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available as well as the capacitance model.
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2018-04-29 08:57:45 +02:00
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Subthreshold behavior (parameter ksubthres) is available,
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and is compatible with LTSPICE. An alternative weak inversion
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model may be seected by choosing the subslope parameter instead
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of ksubthres.
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A quasi saturation model enhancement is available.
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The model parameters supported are:
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/* basic device */
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"vto", ,"Threshold voltage"
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"kp", "Transconductance parameter"
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"phi", "Surface potential"
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"lambda","Channel length modulation"
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"rd", "Drain ohmic resistance"
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"rs", "Source ohmic resistance"
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"rg", "Gate ohmic resistance"
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"tnom", "Parameter measurement temperature"
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"kf", "Flicker noise coefficient"
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"af", "Flicker noise exponent"
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/* quasi saturation */
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"rq", "Quasi saturation resistance fitting parameter"
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"vq", "Quasi saturation voltage fitting parameter"
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"mtriode", "Conductance multiplier in triode region"
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/* weak inversion */
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"subslope", "Slope of weak inversion log current versus vgs - vth "
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"subshift", "Shift of weak inversion plot on the vgs axis "
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"ksubthres", "Slope n from (vgs-vth)/n, LTSPICE and SuperSpice standard"
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/* body diode */
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"bv", "Vds breakdown voltage"
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"ibv", "Current at Vds=bv"
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"nbv", "Vds breakdown emission coefficient"
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"rds", "Drain-source shunt resistance"
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"rb", "Body diode ohmic resistance"
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"n", "Bulk diode emission coefficient"
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"tt", "Body diode transit time"
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"eg", "Body diode activation energy for temperature effect on Is"
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"Xti", "Body diode saturation current temperature exponent"
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"is", "Body diode saturation current"
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"vj", "Body diode junction potential"
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/* body diode capacitance (e.g. source-drain capacitance */
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"fc", "Body diode coefficient for forward-bias depletion capacitance formula"
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"cjo", "Zero-bias body diode junction capacitance"
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"m", "Body diode grading coefficient"
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/* gate-source and gate-drain capacitances */
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"cgdmin", "Minimum non-linear G-D capacitance"
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"cgdmax", "Maximum non-linear G-D capacitance"
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"a", "Non-linear Cgd capacitance parameter"
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"cgs", "Gate-source capacitance"
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