Corrected one small inconsistency in the handling of symmetric vs.

asymmetric MOSFET definitions in the tech file "extract" section.
Corrected the nmos.tech.in file to put the resistance classes in
plane order, as otherwise the interpretation of which resistance
classes belongs to the transistor source and drain can get messed
up by the presence of buried contacts.

VERSION

@@ -1 +1 @@
-8.3.117
+8.3.118

extract/ExtTech.c

@@ -2202,10 +2202,13 @@ ExtTechLine(sectionName, argc, argv)
 			    termtypes[1] = DBZeroTypeBits;	/* Make it symmetric */
 			else if (!TTMaskIsZero(&termtypes[2]))
 			{
+			    class = DEV_ASYMMETRIC;
 			    TechError("Device mosfet %s has overlapping drain"
 				" and source types!\n", transName);
 			    /* Should this device be disabled? */
 			}
+			else
+			    class = DEV_ASYMMETRIC;
 			termtypes[2] = DBZeroTypeBits;
 			if (strcmp(argv[6], "None"))
 		    	DBTechNoisyNameMask(argv[6], &subsTypes);   /* substrate */
@@ -2213,7 +2216,6 @@ ExtTechLine(sectionName, argc, argv)
 			if (argc > 8) gscap = aToCap(argv[8]);
 			if (argc > 9) gccap = aToCap(argv[9]);
 			nterm = 2;
-			class = DEV_ASYMMETRIC;
 		    }
 		    else
 		    {

scmos/nmos.tech.in

@@ -354,8 +354,8 @@ extract
     planeorder metal	1
 
     #  sheet resistivity				milli-ohms per square */
-    resist		poly,pmc/poly,efet,dfet,bc	30000
     resist		diff,dmc/poly			10000
+    resist		poly,pmc/poly,efet,dfet,bc	30000
     resist		metal,glass			   30
 
     #  area capacitance				atto-farads/lambda**2 */