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Introduced perimeter parameters for MOS3/MOS4

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This commit is contained in:
Matthias Koefferlein
2019-02-02 01:29:28 +01:00
parent 11cfe36ed1
commit c90f7e4af9
21 changed files with 278 additions and 159 deletions
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src/db/unit_tests/dbNetlistWriterTests.cc
+12
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@@ -393,11 +393,15 @@ TEST(5_WriterMOS3Devices)
ddev1->set_parameter_value (db::DeviceClassMOS3Transistor::param_id_W, 0.18);
ddev1->set_parameter_value (db::DeviceClassMOS3Transistor::param_id_AS, 1.2);
ddev1->set_parameter_value (db::DeviceClassMOS3Transistor::param_id_AD, 0.75);
ddev1->set_parameter_value (db::DeviceClassMOS3Transistor::param_id_PS, 2.2);
ddev1->set_parameter_value (db::DeviceClassMOS3Transistor::param_id_PD, 1.75);
db::Device *ddev2 = new db::Device (m3cls);
ddev2->set_parameter_value (db::DeviceClassMOS3Transistor::param_id_L, 1.4);
ddev2->set_parameter_value (db::DeviceClassMOS3Transistor::param_id_W, 0.25);
ddev2->set_parameter_value (db::DeviceClassMOS3Transistor::param_id_AS, 1.3);
ddev2->set_parameter_value (db::DeviceClassMOS3Transistor::param_id_AD, 0.85);
ddev2->set_parameter_value (db::DeviceClassMOS3Transistor::param_id_PS, 2.3);
ddev2->set_parameter_value (db::DeviceClassMOS3Transistor::param_id_PD, 1.85);
circuit1->add_device (ddev1);
circuit1->add_device (ddev2);
@@ -488,11 +492,15 @@ TEST(6_WriterMOS4Devices)
ddev1->set_parameter_value (db::DeviceClassMOS3Transistor::param_id_W, 0.18);
ddev1->set_parameter_value (db::DeviceClassMOS3Transistor::param_id_AS, 1.2);
ddev1->set_parameter_value (db::DeviceClassMOS3Transistor::param_id_AD, 0.75);
ddev1->set_parameter_value (db::DeviceClassMOS3Transistor::param_id_PS, 2.2);
ddev1->set_parameter_value (db::DeviceClassMOS3Transistor::param_id_PD, 1.75);
db::Device *ddev2 = new db::Device (m4cls);
ddev2->set_parameter_value (db::DeviceClassMOS3Transistor::param_id_L, 1.4);
ddev2->set_parameter_value (db::DeviceClassMOS3Transistor::param_id_W, 0.25);
ddev2->set_parameter_value (db::DeviceClassMOS3Transistor::param_id_AS, 1.3);
ddev2->set_parameter_value (db::DeviceClassMOS3Transistor::param_id_AD, 0.85);
ddev2->set_parameter_value (db::DeviceClassMOS3Transistor::param_id_PS, 2.3);
ddev2->set_parameter_value (db::DeviceClassMOS3Transistor::param_id_PD, 1.85);
circuit1->add_device (ddev1);
circuit1->add_device (ddev2);
@@ -657,11 +665,15 @@ TEST(8_WriterSubcircuits)
ddev1->set_parameter_value (db::DeviceClassMOS3Transistor::param_id_W, 0.18);
ddev1->set_parameter_value (db::DeviceClassMOS3Transistor::param_id_AS, 1.2);
ddev1->set_parameter_value (db::DeviceClassMOS3Transistor::param_id_AD, 0.75);
ddev1->set_parameter_value (db::DeviceClassMOS3Transistor::param_id_PS, 2.2);
ddev1->set_parameter_value (db::DeviceClassMOS3Transistor::param_id_PD, 1.75);
db::Device *ddev2 = new db::Device (m4cls);
ddev2->set_parameter_value (db::DeviceClassMOS3Transistor::param_id_L, 1.4);
ddev2->set_parameter_value (db::DeviceClassMOS3Transistor::param_id_W, 0.25);
ddev2->set_parameter_value (db::DeviceClassMOS3Transistor::param_id_AS, 1.3);
ddev2->set_parameter_value (db::DeviceClassMOS3Transistor::param_id_AD, 0.85);
ddev2->set_parameter_value (db::DeviceClassMOS3Transistor::param_id_PS, 2.3);
ddev2->set_parameter_value (db::DeviceClassMOS3Transistor::param_id_PD, 1.85);
circuit1->add_device (ddev1);
circuit1->add_device (ddev2);