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Separate active and poly contact to gate rule

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This commit is contained in:
mrg
2020-06-24 09:17:39 -07:00
parent a32b5b13e8
commit cddb16dabc
7 changed files with 15 additions and 15 deletions
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compiler/base/design.py
+2 -1
View File
@@ -205,7 +205,8 @@ class design(hierarchy_design):
print("poly_to_active", self.poly_to_active)
print("poly_extend_active", self.poly_extend_active)
print("poly_to_contact", self.poly_to_contact)
print("contact_to_gate", self.contact_to_gate)
print("active_contact_to_gate", self.active_contact_to_gate)
print("poly_contact_to_gate", self.poly_contact_to_gate)
print("well_enclose_active", self.well_enclose_active)
print("implant_enclose_active", self.implant_enclose_active)
print("implant_space", self.implant_space)
compiler/pgates/pnand2.py
+2 -2
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@@ -184,7 +184,7 @@ class pnand2(pgate.pgate):
# doesn't use nmos uy because that is calculated using offset + poly height
active_top = self.nmos1_inst.by() + self.nmos1_inst.mod.active_height
active_to_poly_contact = active_top + self.poly_to_active + 0.5 * contact.poly_contact.first_layer_height
active_to_poly_contact2 = active_top + drc("contact_to_gate") + 0.5 * self.route_layer_width
active_to_poly_contact2 = active_top + self.poly_contact_to_gate + 0.5 * self.route_layer_width
self.inputA_yoffset = max(active_contact_to_poly_contact,
active_to_poly_contact,
active_to_poly_contact2)
@@ -200,7 +200,7 @@ class pnand2(pgate.pgate):
# active_contact_to_poly_contact = self.output_yoffset - self.route_layer_space - 0.5 * contact.poly_contact.second_layer_height
# active_bottom = self.pmos1_inst.by()
# active_to_poly_contact = active_bottom - self.poly_to_active - 0.5 * contact.poly_contact.first_layer_height
# active_to_poly_contact2 = active_bottom - drc("contact_to_gate") - 0.5 * self.route_layer_width
# active_to_poly_contact2 = active_bottom - self.poly_contact_to_gate - 0.5 * self.route_layer_width
# self.inputB_yoffset = min(active_contact_to_poly_contact,
# active_to_poly_contact,
# active_to_poly_contact2)
compiler/pgates/pnand3.py
+3 -4
View File
@@ -222,7 +222,7 @@ class pnand3(pgate.pgate):
# doesn't use nmos uy because that is calculated using offset + poly height
active_top = self.nmos1_inst.by() + self.nmos1_inst.mod.active_height
active_to_poly_contact = active_top + self.poly_to_active + 0.5 * contact.poly_contact.first_layer_height
active_to_poly_contact2 = active_top + drc("contact_to_gate") + 0.5 * self.route_layer_width
active_to_poly_contact2 = active_top + self.poly_contact_to_gate + 0.5 * self.route_layer_width
self.inputA_yoffset = max(active_contact_to_poly_contact,
active_to_poly_contact,
active_to_poly_contact2)
@@ -233,15 +233,14 @@ class pnand3(pgate.pgate):
"A",
position="left")
# Put B right on the well line
self.inputB_yoffset = self.inputA_yoffset + non_contact_pitch
self.inputB_yoffset = self.inputA_yoffset + 1.2 * self.m3_pitch
self.route_input_gate(self.pmos2_inst,
self.nmos2_inst,
self.inputB_yoffset,
"B",
position="center")
self.inputC_yoffset = self.inputB_yoffset + non_contact_pitch
self.inputC_yoffset = self.inputB_yoffset + 1.2 * self.m3_pitch
self.route_input_gate(self.pmos3_inst,
self.nmos3_inst,
self.inputC_yoffset,
compiler/pgates/precharge.py
+1 -1
View File
@@ -196,7 +196,7 @@ class precharge(design.design):
pin_offset = self.lower_pmos_inst.get_pin("G").lr()
# This is an extra space down for some techs with contact to active spacing
contact_space = max(self.poly_space,
self.contact_to_gate) + 0.5 * contact.poly_contact.first_layer_height
self.poly_contact_to_gate) + 0.5 * contact.poly_contact.first_layer_height
offset = pin_offset - vector(0, contact_space)
self.add_via_stack_center(from_layer="poly",
to_layer=self.en_layer,
compiler/pgates/ptx.py
+3 -3
View File
@@ -196,7 +196,7 @@ class ptx(design.design):
# This is the spacing between the poly gates
self.min_poly_pitch = self.poly_space + self.poly_width
self.contacted_poly_pitch = self.poly_space + contact.poly_contact.width
self.contact_pitch = 2 * self.contact_to_gate + self.poly_width + self.contact_width
self.contact_pitch = 2 * self.active_contact_to_gate + self.poly_width + self.contact_width
self.poly_pitch = max(self.min_poly_pitch,
self.contacted_poly_pitch,
self.contact_pitch)
@@ -206,7 +206,7 @@ class ptx(design.design):
# Active width is determined by enclosure on both ends and contacted pitch,
# at least one poly and n-1 poly pitches
self.active_width = 2 * self.end_to_contact + self.active_contact.width \
+ 2 * self.contact_to_gate + self.poly_width + (self.mults - 1) * self.poly_pitch
+ 2 * self.active_contact_to_gate + self.poly_width + (self.mults - 1) * self.poly_pitch
# Active height is just the transistor width
self.active_height = self.tx_width
@@ -321,7 +321,7 @@ class ptx(design.design):
"""
# poly is one contacted spacing from the end and down an extension
poly_offset = self.contact_offset \
+ vector(0.5 * self.active_contact.width + 0.5 * self.poly_width + self.contact_to_gate, 0)
+ vector(0.5 * self.active_contact.width + 0.5 * self.poly_width + self.active_contact_to_gate, 0)
# poly_positions are the bottom center of the poly gates
self.poly_positions = []