mirror of https://github.com/VLSIDA/OpenRAM.git
Separate active and poly contact to gate rule
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@ -205,7 +205,8 @@ class design(hierarchy_design):
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print("poly_to_active", self.poly_to_active)
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print("poly_extend_active", self.poly_extend_active)
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print("poly_to_contact", self.poly_to_contact)
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print("contact_to_gate", self.contact_to_gate)
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print("active_contact_to_gate", self.active_contact_to_gate)
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print("poly_contact_to_gate", self.poly_contact_to_gate)
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print("well_enclose_active", self.well_enclose_active)
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print("implant_enclose_active", self.implant_enclose_active)
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print("implant_space", self.implant_space)
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@ -184,7 +184,7 @@ class pnand2(pgate.pgate):
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# doesn't use nmos uy because that is calculated using offset + poly height
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active_top = self.nmos1_inst.by() + self.nmos1_inst.mod.active_height
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active_to_poly_contact = active_top + self.poly_to_active + 0.5 * contact.poly_contact.first_layer_height
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active_to_poly_contact2 = active_top + drc("contact_to_gate") + 0.5 * self.route_layer_width
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active_to_poly_contact2 = active_top + self.poly_contact_to_gate + 0.5 * self.route_layer_width
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self.inputA_yoffset = max(active_contact_to_poly_contact,
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active_to_poly_contact,
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active_to_poly_contact2)
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@ -200,7 +200,7 @@ class pnand2(pgate.pgate):
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# active_contact_to_poly_contact = self.output_yoffset - self.route_layer_space - 0.5 * contact.poly_contact.second_layer_height
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# active_bottom = self.pmos1_inst.by()
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# active_to_poly_contact = active_bottom - self.poly_to_active - 0.5 * contact.poly_contact.first_layer_height
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# active_to_poly_contact2 = active_bottom - drc("contact_to_gate") - 0.5 * self.route_layer_width
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# active_to_poly_contact2 = active_bottom - self.poly_contact_to_gate - 0.5 * self.route_layer_width
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# self.inputB_yoffset = min(active_contact_to_poly_contact,
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# active_to_poly_contact,
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# active_to_poly_contact2)
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@ -222,7 +222,7 @@ class pnand3(pgate.pgate):
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# doesn't use nmos uy because that is calculated using offset + poly height
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active_top = self.nmos1_inst.by() + self.nmos1_inst.mod.active_height
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active_to_poly_contact = active_top + self.poly_to_active + 0.5 * contact.poly_contact.first_layer_height
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active_to_poly_contact2 = active_top + drc("contact_to_gate") + 0.5 * self.route_layer_width
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active_to_poly_contact2 = active_top + self.poly_contact_to_gate + 0.5 * self.route_layer_width
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self.inputA_yoffset = max(active_contact_to_poly_contact,
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active_to_poly_contact,
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active_to_poly_contact2)
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@ -233,15 +233,14 @@ class pnand3(pgate.pgate):
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"A",
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position="left")
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# Put B right on the well line
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self.inputB_yoffset = self.inputA_yoffset + non_contact_pitch
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self.inputB_yoffset = self.inputA_yoffset + 1.2 * self.m3_pitch
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self.route_input_gate(self.pmos2_inst,
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self.nmos2_inst,
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self.inputB_yoffset,
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"B",
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position="center")
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self.inputC_yoffset = self.inputB_yoffset + non_contact_pitch
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self.inputC_yoffset = self.inputB_yoffset + 1.2 * self.m3_pitch
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self.route_input_gate(self.pmos3_inst,
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self.nmos3_inst,
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self.inputC_yoffset,
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@ -196,7 +196,7 @@ class precharge(design.design):
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pin_offset = self.lower_pmos_inst.get_pin("G").lr()
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# This is an extra space down for some techs with contact to active spacing
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contact_space = max(self.poly_space,
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self.contact_to_gate) + 0.5 * contact.poly_contact.first_layer_height
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self.poly_contact_to_gate) + 0.5 * contact.poly_contact.first_layer_height
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offset = pin_offset - vector(0, contact_space)
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self.add_via_stack_center(from_layer="poly",
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to_layer=self.en_layer,
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@ -196,7 +196,7 @@ class ptx(design.design):
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# This is the spacing between the poly gates
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self.min_poly_pitch = self.poly_space + self.poly_width
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self.contacted_poly_pitch = self.poly_space + contact.poly_contact.width
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self.contact_pitch = 2 * self.contact_to_gate + self.poly_width + self.contact_width
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self.contact_pitch = 2 * self.active_contact_to_gate + self.poly_width + self.contact_width
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self.poly_pitch = max(self.min_poly_pitch,
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self.contacted_poly_pitch,
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self.contact_pitch)
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@ -206,7 +206,7 @@ class ptx(design.design):
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# Active width is determined by enclosure on both ends and contacted pitch,
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# at least one poly and n-1 poly pitches
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self.active_width = 2 * self.end_to_contact + self.active_contact.width \
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+ 2 * self.contact_to_gate + self.poly_width + (self.mults - 1) * self.poly_pitch
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+ 2 * self.active_contact_to_gate + self.poly_width + (self.mults - 1) * self.poly_pitch
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# Active height is just the transistor width
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self.active_height = self.tx_width
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@ -321,7 +321,7 @@ class ptx(design.design):
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"""
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# poly is one contacted spacing from the end and down an extension
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poly_offset = self.contact_offset \
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+ vector(0.5 * self.active_contact.width + 0.5 * self.poly_width + self.contact_to_gate, 0)
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+ vector(0.5 * self.active_contact.width + 0.5 * self.poly_width + self.active_contact_to_gate, 0)
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# poly_positions are the bottom center of the poly gates
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self.poly_positions = []
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@ -234,9 +234,9 @@ drc.add_enclosure("active",
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enclosure = 0.005)
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# CONTACT.6 Minimum spacing of contact and gate
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drc["contact_to_gate"] = 0.0375 #changed from 0.035
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drc["active_contact_to_gate"] = 0.0375 #changed from 0.035
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# CONTACT.7 Minimum spacing of contact and poly
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drc["contact_to_poly"] = 0.090
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drc["poly_contact_to_gate"] = 0.090
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# CONTACT.1 Minimum width of contact
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# CONTACT.2 Minimum spacing of contact
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@ -217,9 +217,9 @@ drc.add_enclosure("active",
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layer = "contact",
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enclosure = _lambda_)
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# Reserved for other technologies
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drc["contact_to_gate"] = 2*_lambda_
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drc["active_contact_to_gate"] = 2*_lambda_
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# 5.4 Minimum spacing to gate of transistor
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drc["contact_to_poly"] = 2*_lambda_
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drc["poly_contact_to_gate"] = 2*_lambda_
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# 6.1 Exact contact size
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# 5.3 Minimum contact spacing
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