Standardize contact names.

compiler/bitcells/pbitcell.py

@@ -213,7 +213,7 @@ class pbitcell(bitcell_base.bitcell_base):
 
         # y-offset for the access transistor's gate contact
         self.gate_contact_yoffset = max_contact_extension + self.m2_space \
-                                    + 0.5 * max(contact.poly.height, contact.m1m2.height)
+                                    + 0.5 * max(contact.polym1.height, contact.m1m2.height)
 
         # y-position of access transistors
         self.port_ypos = self.m1_space + 0.5 * contact.m1m2.height + self.gate_contact_yoffset
@@ -234,7 +234,7 @@ class pbitcell(bitcell_base.bitcell_base):
         self.read_port_spacing = self.bitline_offset + self.m2_space
 
         # spacing between cross coupled inverters
-        self.inverter_to_inverter_spacing = contact.poly.width + self.m1_space
+        self.inverter_to_inverter_spacing = contact.polym1.width + self.m1_space
 
         # calculations related to inverter connections
         inverter_pmos_contact_extension = 0.5 * \
@@ -243,19 +243,19 @@ class pbitcell(bitcell_base.bitcell_base):
                                           (self.inverter_nmos.active_contact.height - self.inverter_nmos.active_height)
         self.inverter_gap = max(self.poly_to_active,
                                 self.m1_space + inverter_nmos_contact_extension) \
-                                + self.poly_to_contact + 2 * contact.poly.width \
+                                + self.poly_to_contact + 2 * contact.polym1.width \
                                 + self.m1_space + inverter_pmos_contact_extension
         self.cross_couple_lower_ypos = self.inverter_nmos_ypos \
                                        + self.inverter_nmos.active_height \
                                        + max(self.poly_to_active,
                                              self.m1_space + inverter_nmos_contact_extension) \
-                                       + 0.5 * contact.poly.width
+                                       + 0.5 * contact.polym1.width
         self.cross_couple_upper_ypos = self.inverter_nmos_ypos \
                                        + self.inverter_nmos.active_height \
                                        + max(self.poly_to_active,
                                              self.m1_space + inverter_nmos_contact_extension) \
                                        + self.poly_to_contact \
-                                       + 1.5 * contact.poly.width
+                                       + 1.5 * contact.polym1.width
 
         # spacing between wordlines (and gnd)
         self.m1_offset = -0.5 * self.m1_width
@@ -263,7 +263,7 @@ class pbitcell(bitcell_base.bitcell_base):
         # spacing for vdd
         implant_constraint = max(inverter_pmos_contact_extension, 0) \
                              + 2 * self.implant_enclose_active \
-                             + 0.5 * (contact.well.width - self.m1_width)
+                             + 0.5 * (contact.activem1.width - self.m1_width)
         metal1_constraint = max(inverter_pmos_contact_extension, 0) + self.m1_space
         self.vdd_offset = max(implant_constraint, metal1_constraint)  + 0.5*self.m1_width
 
@@ -367,16 +367,16 @@ class pbitcell(bitcell_base.bitcell_base):
         self.add_path("m1",
                       [self.inverter_nmos_left.get_pin("D").uc(),
                        self.inverter_pmos_left.get_pin("D").bc()],
-                      width=contact.active.second_layer_width)
+                      width=contact.activem1.second_layer_width)
         self.add_path("m1",
                       [self.inverter_nmos_right.get_pin("S").uc(),
                        self.inverter_pmos_right.get_pin("S").bc()],
-                      width=contact.active.second_layer_width)
+                      width=contact.activem1.second_layer_width)
 
         # add contacts to connect gate poly to drain/source
         # metal1 (to connect Q to Q_bar)
         contact_offset_left =  vector(self.inverter_nmos_left.get_pin("D").rc().x \
-                                      + 0.5 * contact.poly.height,
+                                      + 0.5 * contact.polym1.height,
                                       self.cross_couple_upper_ypos)
         self.add_via_center(layers=self.poly_stack,
                             offset=contact_offset_left,
@@ -384,7 +384,7 @@ class pbitcell(bitcell_base.bitcell_base):
 
 
         contact_offset_right =  vector(self.inverter_nmos_right.get_pin("S").lc().x \
-                                       - 0.5*contact.poly.height,
+                                       - 0.5*contact.polym1.height,
                                        self.cross_couple_lower_ypos)
         self.add_via_center(layers=self.poly_stack,
                             offset=contact_offset_right,
@@ -926,14 +926,14 @@ class pbitcell(bitcell_base.bitcell_base):
         """
         # add poly to metal1 contacts for gates of the inverters
         left_storage_contact =  vector(self.inverter_nmos_left.get_pin("G").lc().x \
-                                       - self.poly_to_contact - 0.5*contact.poly.width,
+                                       - self.poly_to_contact - 0.5*contact.polym1.width,
                                        self.cross_couple_upper_ypos)
         self.add_via_center(layers=self.poly_stack,
                             offset=left_storage_contact,
                             directions=("H", "H"))
 
         right_storage_contact =  vector(self.inverter_nmos_right.get_pin("G").rc().x \
-                                        + self.poly_to_contact + 0.5*contact.poly.width,
+                                        + self.poly_to_contact + 0.5*contact.polym1.width,
                                         self.cross_couple_upper_ypos)
         self.add_via_center(layers=self.poly_stack,
                             offset=right_storage_contact,

compiler/pgates/pgate.py

@@ -88,14 +88,14 @@ class pgate(design.design):
 
         # Center is completely symmetric.
         if rotate:
-            contact_width = contact.poly.height
+            contact_width = contact.polym1.height
-            contact_m1_width = contact.poly.second_layer_height
+            contact_m1_width = contact.polym1.second_layer_height
-            contact_m1_height = contact.poly.second_layer_width
+            contact_m1_height = contact.polym1.second_layer_width
             directions = ("H", "V")
         else:
-            contact_width = contact.poly.width
+            contact_width = contact.polym1.width
-            contact_m1_width = contact.poly.second_layer_width
+            contact_m1_width = contact.polym1.second_layer_width
-            contact_m1_height = contact.poly.second_layer_height
+            contact_m1_height = contact.polym1.second_layer_height
             directions = ("V", "H")
             
         if position == "center":
@@ -103,7 +103,7 @@ class pgate(design.design):
                              + vector(0.5 * self.poly_width, 0)
         elif position == "farleft":
             contact_offset = left_gate_offset \
-                             - vector(0.5 * contact.poly.width, 0)
+                             - vector(0.5 * contact.polym1.width, 0)
         elif position == "left":
             contact_offset = left_gate_offset \
                              - vector(0.5 * contact_width - 0.5 * self.poly_width, 0)
@@ -131,7 +131,7 @@ class pgate(design.design):
                     + left_gate_offset.scale(0.5, 0)
         self.add_rect_center(layer="poly",
                              offset=mid_point,
-                             height=contact.poly.first_layer_width,
+                             height=contact.polym1.first_layer_width,
                              width=left_gate_offset.x - contact_offset.x)
 
     def extend_wells(self, middle_position):

compiler/pgates/pinv.py

@@ -95,8 +95,8 @@ class pinv(pgate.pgate):
                               tx_type="pmos")
         tx_height = nmos.poly_height + pmos.poly_height
         # rotated m1 pitch or poly to active spacing
-        min_channel = max(contact.poly.width + self.m1_space,
+        min_channel = max(contact.polym1.width + self.m1_space,
-                          contact.poly.width + 2 * self.poly_to_active)
+                          contact.polym1.width + 2 * self.poly_to_active)
         
         # This is the extra space needed to ensure DRC rules
         # to the active contacts

compiler/pgates/pnand2.py

@@ -85,7 +85,7 @@ class pnand2(pgate.pgate):
         """ Pre-compute some handy layout parameters. """
 
         # metal spacing to allow contacts on any layer
-        self.input_spacing = max(self.poly_space + contact.poly.first_layer_width,
+        self.input_spacing = max(self.poly_space + contact.polym1.first_layer_width,
                                  self.m1_space + contact.m1m2.first_layer_width,
                                  self.m2_space + contact.m2m3.first_layer_width, 
                                  self.m3_space + contact.m2m3.second_layer_width)
@@ -98,7 +98,7 @@ class pnand2(pgate.pgate):
 
         # Two PMOS devices and a well contact. Separation between each.
         # Enclosure space on the sides.
-        self.well_width = 2 * self.pmos.active_width + contact.active.width \
+        self.well_width = 2 * self.pmos.active_width + contact.activem1.width \
                           + 2 * self.active_space \
                           + 2 * self.well_enclose_active
 

compiler/pgates/pnand3.py

@@ -202,10 +202,10 @@ class pnand3(pgate.pgate):
         # wire space or wire and one contact space
         metal_spacing = max(self.m1_space + self.m1_width,
                             self.m2_space + self.m2_width,
-                            self.m1_space + 0.5 *contact.poly.width + 0.5 * self.m1_width)
+                            self.m1_space + 0.5 *contact.polym1.width + 0.5 * self.m1_width)
 
         active_spacing = max(self.m1_space,
-                             0.5 * contact.poly.first_layer_width + self.poly_to_active)
+                             0.5 * contact.polym1.first_layer_width + self.poly_to_active)
         inputC_yoffset = self.nmos3_pos.y + self.nmos.active_height + active_spacing
         self.route_input_gate(self.pmos3_inst,
                               self.nmos3_inst,

compiler/pgates/pnor2.py

@@ -84,7 +84,7 @@ class pnor2(pgate.pgate):
         """ Pre-compute some handy layout parameters. """
 
         # metal spacing to allow contacts on any layer
-        self.input_spacing = max(self.poly_space + contact.poly.first_layer_width,
+        self.input_spacing = max(self.poly_space + contact.polym1.first_layer_width,
                                  self.m1_space + contact.m1m2.first_layer_width,
                                  self.m2_space + contact.m2m3.first_layer_width, 
                                  self.m3_space + contact.m2m3.second_layer_width)

compiler/pgates/precharge.py

@@ -121,7 +121,7 @@ class precharge(design.design):
         self.lower_pmos_inst.place(self.lower_pmos_position)
 
         # adds the upper pmos(s) to layout
-        ydiff = self.pmos.height + 2 * self.m1_space + contact.poly.width
+        ydiff = self.pmos.height + 2 * self.m1_space + contact.polym1.width
         self.upper_pmos1_pos = self.lower_pmos_position + vector(0, ydiff)
         self.upper_pmos1_inst.place(self.upper_pmos1_pos)
 
@@ -175,7 +175,7 @@ class precharge(design.design):
         
         # adds the contact from active to metal1
         well_contact_pos = self.upper_pmos1_inst.get_pin("D").center().scale(1, 0) \
-                           + vector(0, self.upper_pmos1_inst.uy() + contact.well.height / 2 \
+                           + vector(0, self.upper_pmos1_inst.uy() + contact.activem1.height / 2 \
                                     + self.well_extend_active)
         self.add_via_center(layers=self.active_stack,
                             offset=well_contact_pos,
@@ -183,7 +183,7 @@ class precharge(design.design):
                             well_type="n")
 
         # leave an extra pitch for the height
-        self.height = well_contact_pos.y + contact.well.height + self.m1_pitch
+        self.height = well_contact_pos.y + contact.activem1.height + self.m1_pitch
 
         # nwell should span the whole design since it is pmos only
         self.add_rect(layer="nwell",

compiler/pgates/ptristate_inv.py

@@ -80,7 +80,7 @@ class ptristate_inv(pgate.pgate):
         # Height is an input parameter, so it is not recomputed.
         
         # Make sure we can put a well above and below
-        self.top_bottom_space = max(contact.well.width, contact.well.height)
+        self.top_bottom_space = max(contact.activem1.width, contact.activem1.height)
 
         
     def add_ptx(self):
@@ -138,8 +138,8 @@ class ptristate_inv(pgate.pgate):
         """
 
         pmos_yoff = self.height - self.pmos.active_height \
-                    - self.top_bottom_space - 0.5 * contact.well.height
+                    - self.top_bottom_space - 0.5 * contact.activem1.height
-        nmos_yoff = self.top_bottom_space + 0.5 * contact.well.height
+        nmos_yoff = self.top_bottom_space + 0.5 * contact.activem1.height
 
         # Tristate transistors
         pmos1_pos = vector(self.pmos.active_offset.x, pmos_yoff)