Fix dummy row LVS issue

This commit is contained in:
mrg 2019-06-14 15:06:04 -07:00
parent d35f180609
commit 5c4df2410e
5 changed files with 57 additions and 8 deletions

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@ -0,0 +1,48 @@
# See LICENSE for licensing information.
#
# Copyright (c) 2016-2019 Regents of the University of California and The Board
# of Regents for the Oklahoma Agricultural and Mechanical College
# (acting for and on behalf of Oklahoma State University)
# All rights reserved.
#
import design
import debug
import utils
from tech import GDS,layer,parameter,drc
import logical_effort
class dummy_bitcell(design.design):
"""
A single bit cell (6T, 8T, etc.) This module implements the
single memory cell used in the design. It is a hand-made cell, so
the layout and netlist should be available in the technology
library.
"""
pin_names = ["bl", "br", "wl", "vdd", "gnd"]
(width,height) = utils.get_libcell_size("dummy_cell_6t", GDS["unit"], layer["boundary"])
pin_map = utils.get_libcell_pins(pin_names, "dummy_cell_6t", GDS["unit"])
def __init__(self, name=""):
# Ignore the name argument
design.design.__init__(self, "dummy_cell_6t")
debug.info(2, "Create dummy bitcell")
self.width = dummy_bitcell.width
self.height = dummy_bitcell.height
self.pin_map = dummy_bitcell.pin_map
def analytical_power(self, corner, load):
"""Bitcell power in nW. Only characterizes leakage."""
from tech import spice
leakage = spice["bitcell_leakage"]
dynamic = 0 #temporary
total_power = self.return_power(dynamic, leakage)
return total_power
def get_wl_cin(self):
"""Return the relative capacitance of the access transistor gates"""
#This is a handmade cell so the value must be entered in the tech.py file or estimated.
#Calculated in the tech file by summing the widths of all the related gates and dividing by the minimum width.
access_tx_cin = parameter["6T_access_size"]/drc["minwidth_tx"]
return 2*access_tx_cin

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@ -1,6 +1,6 @@
magic
tech scmos
timestamp 1536091415
timestamp 1560540221
<< nwell >>
rect -8 29 42 51
<< pwell >>
@ -92,17 +92,18 @@ rect 32 16 36 22
rect -2 6 17 9
rect 21 6 36 9
rect -2 5 36 6
rect 6 -2 10 2
rect 20 -2 24 2
<< m2contact >>
rect 15 44 19 48
rect -2 29 2 33
rect 32 29 36 33
rect 6 -2 10 2
rect 20 -2 24 2
<< metal2 >>
rect -2 33 2 48
rect -2 -2 2 29
rect 6 2 10 48
rect 24 -2 28 48
rect 6 -2 10 48
rect 24 2 28 48
rect 20 -2 28 2
rect 32 33 36 48
rect 32 -2 36 29
<< bb >>

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@ -4,6 +4,7 @@ equate class {-circuit1 nfet} {-circuit2 n}
equate class {-circuit1 pfet} {-circuit2 p}
# This circuit has symmetries and needs to be flattened to resolve them
# or the banks won't pass
flatten class {-circuit1 dummy_cell_6t}
flatten class {-circuit1 bitcell_array_0}
flatten class {-circuit1 bitcell_array_1}
#flatten class {-circuit1 precharge_array_0}

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@ -1,7 +1,6 @@
*********************** "cell_6t" ******************************
.SUBCKT cell_6t bl br wl vdd gnd
* SPICE3 file created from cell_6t.ext - technology: scmos
*********************** "dummy_cell_6t" ******************************
.SUBCKT dummy_cell_6t bl br wl vdd gnd
* Inverter 1
M1000 Q Qbar vdd vdd p w=0.6u l=0.8u