mirror of https://github.com/VLSIDA/OpenRAM.git
Fix missing imports in replica bitcells.
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parent
2f12c77668
commit
29f4ee492b
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@ -8,7 +8,8 @@
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import debug
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import bitcell_base
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from tech import cell_properties as props
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from tech import parameter
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from tech import parameter, drc
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import logical_effort
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class replica_bitcell(bitcell_base.bitcell_base):
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@ -31,23 +32,23 @@ class replica_bitcell(bitcell_base.bitcell_base):
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def get_stage_effort(self, load):
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parasitic_delay = 1
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size = 0.5 #This accounts for bitline being drained thought the access TX and internal node
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cin = 3 #Assumes always a minimum sizes inverter. Could be specified in the tech.py file.
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read_port_load = 0.5 #min size NMOS gate load
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return logical_effort.logical_effort('bitline', size, cin, load+read_port_load, parasitic_delay, False)
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size = 0.5 # This accounts for bitline being drained thought the access TX and internal node
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cin = 3 # Assumes always a minimum sizes inverter. Could be specified in the tech.py file.
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read_port_load = 0.5 # min size NMOS gate load
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return logical_effort.logical_effort('bitline', size, cin, load + read_port_load, parasitic_delay, False)
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def input_load(self):
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"""Return the relative capacitance of the access transistor gates"""
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# FIXME: This applies to bitline capacitances as well.
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access_tx_cin = parameter["6T_access_size"]/drc["minwidth_tx"]
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return 2*access_tx_cin
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access_tx_cin = parameter["6T_access_size"] / drc["minwidth_tx"]
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return 2 * access_tx_cin
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def analytical_power(self, corner, load):
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"""Bitcell power in nW. Only characterizes leakage."""
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from tech import spice
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leakage = spice["bitcell_leakage"]
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dynamic = 0 #temporary
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dynamic = 0 # FIXME
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total_power = self.return_power(dynamic, leakage)
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return total_power
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@ -8,7 +8,8 @@
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import debug
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import bitcell_base
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from tech import cell_properties as props
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from tech import parameter
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from tech import parameter, drc
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import logical_effort
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class replica_bitcell_1rw_1r(bitcell_base.bitcell_base):
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@ -34,25 +35,25 @@ class replica_bitcell_1rw_1r(bitcell_base.bitcell_base):
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def get_stage_effort(self, load):
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parasitic_delay = 1
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size = 0.5 #This accounts for bitline being drained thought the access TX and internal node
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cin = 3 #Assumes always a minimum sizes inverter. Could be specified in the tech.py file.
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read_port_load = 0.5 #min size NMOS gate load
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return logical_effort.logical_effort('bitline', size, cin, load+read_port_load, parasitic_delay, False)
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size = 0.5 # This accounts for bitline being drained thought the access TX and internal node
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cin = 3 # Assumes always a minimum sizes inverter. Could be specified in the tech.py file.
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read_port_load = 0.5 # min size NMOS gate load
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return logical_effort.logical_effort('bitline', size, cin, load + read_port_load, parasitic_delay, False)
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def input_load(self):
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"""Return the relative capacitance of the access transistor gates"""
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# FIXME: This applies to bitline capacitances as well.
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# FIXME: sizing is not accurate with the handmade cell. Change once cell widths are fixed.
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access_tx_cin = parameter["6T_access_size"]/drc["minwidth_tx"]
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return 2*access_tx_cin
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access_tx_cin = parameter["6T_access_size"] / drc["minwidth_tx"]
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return 2 * access_tx_cin
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def build_graph(self, graph, inst_name, port_nets):
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"""Adds edges to graph. Multiport bitcell timing graph is too complex
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to use the add_graph_edges function."""
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pin_dict = {pin:port for pin,port in zip(self.pins, port_nets)}
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pin_dict = {pin: port for pin, port in zip(self.pins, port_nets)}
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pins = props.bitcell.cell_1rw1r.pin
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#Edges hardcoded here. Essentially wl->bl/br for both ports.
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# Edges hardcoded here. Essentially wl->bl/br for both ports.
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# Port 0 edges
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graph.add_edge(pin_dict[pins.wl0], pin_dict[pins.bl0], self)
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graph.add_edge(pin_dict[pins.wl0], pin_dict[pins.br0], self)
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@ -8,6 +8,8 @@
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import debug
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import bitcell_base
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from tech import cell_properties as props
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from tech import parameter, drc
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import logical_effort
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class replica_bitcell_1w_1r(bitcell_base.bitcell_base):
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@ -33,26 +35,26 @@ class replica_bitcell_1w_1r(bitcell_base.bitcell_base):
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def get_stage_effort(self, load):
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parasitic_delay = 1
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size = 0.5 #This accounts for bitline being drained thought the access TX and internal node
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cin = 3 #Assumes always a minimum sizes inverter. Could be specified in the tech.py file.
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read_port_load = 0.5 #min size NMOS gate load
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return logical_effort.logical_effort('bitline', size, cin, load+read_port_load, parasitic_delay, False)
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size = 0.5 # This accounts for bitline being drained thought the access TX and internal node
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cin = 3 # Assumes always a minimum sizes inverter. Could be specified in the tech.py file.
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read_port_load = 0.5 # min size NMOS gate load
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return logical_effort.logical_effort('bitline', size, cin, load + read_port_load, parasitic_delay, False)
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def input_load(self):
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"""Return the relative capacitance of the access transistor gates"""
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# FIXME: This applies to bitline capacitances as well.
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# FIXME: sizing is not accurate with the handmade cell. Change once cell widths are fixed.
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access_tx_cin = parameter["6T_access_size"]/drc["minwidth_tx"]
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return 2*access_tx_cin
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access_tx_cin = parameter["6T_access_size"] / drc["minwidth_tx"]
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return 2 * access_tx_cin
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def build_graph(self, graph, inst_name, port_nets):
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"""Adds edges to graph. Multiport bitcell timing graph is too complex
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to use the add_graph_edges function."""
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debug.info(1,'Adding edges for {}'.format(inst_name))
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pin_dict = {pin:port for pin,port in zip(self.pins, port_nets)}
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debug.info(1, 'Adding edges for {}'.format(inst_name))
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pin_dict = {pin: port for pin, port in zip(self.pins, port_nets)}
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pins = props.bitcell.cell_1w1r.pin
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#Edges hardcoded here. Essentially wl->bl/br for the read port.
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# Edges hardcoded here. Essentially wl->bl/br for the read port.
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# Port 1 edges
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graph.add_edge(pin_dict[pins.wl1], pin_dict[pins.bl1], self)
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graph.add_edge(pin_dict[pins.wl1], pin_dict[pins.br1], self)
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