small changes (typos) in autozero_comp.sch
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@ -42,8 +42,8 @@ B 2 350 -1020 810 -860 {flags=graph
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y1 = 0
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y2 = 0.93
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divy = 5
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x1=1.02182e-07
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x2=4.39927e-07
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x1=1.0574372e-07
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x2=4.3554617e-07
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divx=5
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subdivx=4
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unitx=n
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@ -60,8 +60,8 @@ B 2 350 -1160 810 -1030 {flags=graph
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y1 = 0.647319
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y2 = 0.652563
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x1=1.02182e-07
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x2=4.39927e-07
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x1=1.0574372e-07
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x2=4.3554617e-07
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unitx=n
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divx=5
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subdivx=2
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@ -76,8 +76,8 @@ B 2 350 -1320 810 -1160 {flags=graph
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y1 = 0
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y2 = 0.9
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divy = 5
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x1=1.02182e-07
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x2=4.39927e-07
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x1=1.0574372e-07
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x2=4.3554617e-07
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unitx=n
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divx=5
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subdivx=4
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@ -100,8 +100,8 @@ B 2 350 -1450 810 -1330 {flags=graph
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y1 = -8.54414e-05
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y2 = 2.7198e-05
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divy = 5
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x1=1.02182e-07
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x2=4.39927e-07
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x1=1.0574372e-07
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x2=4.3554617e-07
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divx=5
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subdivx=4
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unitx=n
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@ -127,7 +127,7 @@ Output on SAOUT
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Gaussian Threshold variation (via delvto parameter) is added to all MOS transistors.} 1110 -240 0 0 0.6 0.6 {}
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T {.param ABSVAR=0.05
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delvto='agauss(0,ABSVAR,3)'} 1390 -120 0 0 0.6 0.6 {layer=8}
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T {tcleval(Dataset=\\n[xschem getprop rect 2 0 dataset])} 340 -850 0 0 0.7 0.7 {floater=xxx}
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T {tcleval(Dataset=[xschem getprop rect 2 0 dataset])} 340 -850 0 0 0.7 0.7 {floater=xxx}
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N 120 -470 120 -450 {lab=TEMPERAT}
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N 360 -530 390 -530 {lab=VSS}
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N 360 -500 360 -480 {lab=VSS}
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