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SUBJECT: main
TITLE: Table of Contents
TEXT: H
TEXT: H
TEXT: H
TEXT: H Important Notice:
TEXT: H This manual is describing the original Spice3 code. It does
TEXT: H not contain all the updates which have been added to ngspice
TEXT: H over the last 10 years! Even if most of its content is still
TEXT: H valid, it may be considered outdated.
TEXT: H
TEXT: H For updated information, please have a look at the actual
TEXT: H ngspicexx-manual.pdf.
TEXT: H
TEXT: H
TEXT: H
TEXT: H
SUBTOPIC: NGSPICE:INTRODUCTION
SUBTOPIC: NGSPICE:CIRCUIT DESCRIPTION
SUBTOPIC: NGSPICE:CIRCUIT ELEMENTS AND MODELS
SUBTOPIC: NGSPICE:ANALYSES AND OUTPUT CONTROL
SUBTOPIC: NGSPICE:INTERACTIVE INTERPRETER
SUBTOPIC: NGSPICE:BIBLIOGRAPHY
SUBTOPIC: NGSPICE:APPENDIX A
SUBTOPIC: NGSPICE:APPENDIX B
SUBJECT: INTRODUCTION
TITLE: INTRODUCTION
TEXT: H
TEXT: H _1. _I_N_T_R_O_D_U_C_T_I_O_N
TEXT: H
TEXT: H
TEXT: H SPICE is a general-purpose circuit simulation program
TEXT: H for nonlinear dc, nonlinear transient, and linear ac ana-
TEXT: H lyses. Circuits may contain resistors, capacitors, induc-
TEXT: H tors, mutual inductors, independent voltage and current
TEXT: H sources, four types of dependent sources, lossless and lossy
TEXT: H transmission lines (two separate implementations), switches,
TEXT: H uniform distributed RC lines, and the five most common sem-
TEXT: H iconductor devices: diodes, BJTs, JFETs, MESFETs, and MOS-
TEXT: H FETs.
TEXT: H
TEXT: H The SPICE3 version is based directly on SPICE 2G.6.
TEXT: H While SPICE3 is being developed to include new features, it
TEXT: H continues to support those capabilities and models which
TEXT: H remain in extensive use in the SPICE2 program.
TEXT: H
TEXT: H SPICE has built-in models for the semiconductor dev-
TEXT: H ices, and the user need specify only the pertinent model
TEXT: H parameter values. The model for the BJT is based on the
TEXT: H integral-charge model of Gummel and Poon; however, if the
TEXT: H Gummel- Poon parameters are not specified, the model reduces
TEXT: H to the simpler Ebers-Moll model. In either case, charge-
TEXT: H storage effects, ohmic resistances, and a current-dependent
TEXT: H output conductance may be included. The diode model can be
TEXT: H used for either junction diodes or Schottky barrier diodes.
TEXT: H The JFET model is based on the FET model of Shichman and
TEXT: H Hodges. Six MOSFET models are implemented: MOS1 is
TEXT: H described by a square-law I-V characteristic, MOS2 [1] is an
TEXT: H analytical model, while MOS3 [1] is a semi-empirical model;
TEXT: H MOS6 [2] is a simple analytic model accurate in the short-
TEXT: H channel region; MOS4 [3, 4] and MOS5 [5] are the BSIM
TEXT: H (Berkeley Short-channel IGFET Model) and BSIM2. MOS2, MOS3,
TEXT: H and MOS4 include second-order effects such as channel-length
TEXT: H modulation, subthreshold conduction, scattering-limited
TEXT: H velocity saturation, small-size effects, and charge-
TEXT: H controlled capacitances.
SUBTOPIC: NGSPICE:TYPES OF ANALYSIS
SUBTOPIC: NGSPICE:ANALYSIS AT DIFFERENT TEMPERATURES
SUBTOPIC: NGSPICE:CONVERGENCE
SUBJECT: TYPES OF ANALYSIS
TITLE: TYPES OF ANALYSIS
TEXT: H
TEXT: H _1._1. _T_Y_P_E_S _O_F _A_N_A_L_Y_S_I_S
TEXT: H
SUBTOPIC: NGSPICE:DC Analysis
SUBTOPIC: NGSPICE:AC SmallSignal Analysis
SUBTOPIC: NGSPICE:Transient Analysis
SUBTOPIC: NGSPICE:PoleZero Analysis
SUBTOPIC: NGSPICE:SmallSignal Distortion Analysis
SUBTOPIC: NGSPICE:Sensitivity Analysis
SUBTOPIC: NGSPICE:Noise Analysis
SUBJECT: DC Analysis
TITLE: DC Analysis
TEXT: H
TEXT: H _1._1._1. _D_C _A_n_a_l_y_s_i_s
TEXT: H
TEXT: H
TEXT: H The dc analysis portion of SPICE determines the dc
TEXT: H operating point of the circuit with inductors shorted and
TEXT: H capacitors opened. The dc analysis options are specified on
TEXT: H the .DC, .TF, and .OP control lines. A dc analysis is
TEXT: H automatically performed prior to a transient analysis to
TEXT: H determine the transient initial conditions, and prior to an
TEXT: H ac small-signal analysis to determine the linearized,
TEXT: H small-signal models for nonlinear devices. If requested,
TEXT: H the dc small-signal value of a transfer function (ratio of
TEXT: H output variable to input source), input resistance, and out-
TEXT: H put resistance is also computed as a part of the dc solu-
TEXT: H tion. The dc analysis can also be used to generate dc
TEXT: H transfer curves: a specified independent voltage or current
TEXT: H source is stepped over a user-specified range and the dc
TEXT: H output variables are stored for each sequential source
TEXT: H value.
TEXT: H
SUBJECT: AC SmallSignal Analysis
TITLE: AC Small-Signal Analysis
TEXT: H
TEXT: H _1._1._2. _A_C _S_m_a_l_l-_S_i_g_n_a_l _A_n_a_l_y_s_i_s
TEXT: H
TEXT: H
TEXT: H The ac small-signal portion of SPICE computes the ac
TEXT: H output variables as a function of frequency. The program
TEXT: H first computes the dc operating point of the circuit and
TEXT: H determines linearized, small-signal models for all of the
TEXT: H nonlinear devices in the circuit. The resultant linear cir-
TEXT: H cuit is then analyzed over a user-specified range of fre-
TEXT: H quencies. The desired output of an ac small- signal
TEXT: H analysis is usually a transfer function (voltage gain, tran-
TEXT: H simpedance, etc). If the circuit has only one ac input, it
TEXT: H is convenient to set that input to unity and zero phase, so
TEXT: H that output variables have the same value as the transfer
TEXT: H function of the output variable with respect to the input.
TEXT: H
SUBJECT: Transient Analysis
TITLE: Transient Analysis
TEXT: H
TEXT: H _1._1._3. _T_r_a_n_s_i_e_n_t _A_n_a_l_y_s_i_s
TEXT: H
TEXT: H The transient analysis portion of SPICE computes the
TEXT: H transient output variables as a function of time over a
TEXT: H user-specified time interval. The initial conditions are
TEXT: H automatically determined by a dc analysis. All sources
TEXT: H which are not time dependent (for example, power supplies)
TEXT: H are set to their dc value. The transient time interval is
TEXT: H specified on a .TRAN control line.
TEXT: H
SUBJECT: PoleZero Analysis
TITLE: Pole-Zero Analysis
TEXT: H
TEXT: H _1._1._4. _P_o_l_e-_Z_e_r_o _A_n_a_l_y_s_i_s
TEXT: H
TEXT: H
TEXT: H The pole-zero analysis portion of SPICE computes the
TEXT: H poles and/or zeros in the small-signal ac transfer function.
TEXT: H The program first computes the dc operating point and then
TEXT: H determines the linearized, small-signal models for all the
TEXT: H nonlinear devices in the circuit. This circuit is then used
TEXT: H to find the poles and zeros of the transfer function.
TEXT: H
TEXT: H Two types of transfer functions are allowed : one of
TEXT: H the form (output voltage)/(input voltage) and the other of
TEXT: H the form (output voltage)/(input current). These two types
TEXT: H of transfer functions cover all the cases and one can find
TEXT: H the poles/zeros of functions like input/output impedance and
TEXT: H voltage gain. The input and output ports are specified as
TEXT: H two pairs of nodes.
TEXT: H
TEXT: H The pole-zero analysis works with resistors, capaci-
TEXT: H tors, inductors, linear-controlled sources, independent
TEXT: H sources, BJTs, MOSFETs, JFETs and diodes. Transmission
TEXT: H lines are not supported.
TEXT: H
TEXT: H The method used in the analysis is a sub-optimal numer-
TEXT: H ical search. For large circuits it may take a considerable
TEXT: H time or fail to find all poles and zeros. For some cir-
TEXT: H cuits, the method becomes "lost" and finds an excessive
TEXT: H number of poles or zeros.
TEXT: H
SUBJECT: SmallSignal Distortion Analysis
TITLE: Small-Signal Distortion Analysis
TEXT: H
TEXT: H _1._1._5. _S_m_a_l_l-_S_i_g_n_a_l _D_i_s_t_o_r_t_i_o_n _A_n_a_l_y_s_i_s
TEXT: H
TEXT: H
TEXT: H The distortion analysis portion of SPICE computes
TEXT: H steady-state harmonic and intermodulation products for small
TEXT: H input signal magnitudes. If signals of a single frequency
TEXT: H are specified as the input to the circuit, the complex
TEXT: H values of the second and third harmonics are determined at
TEXT: H every point in the circuit. If there are signals of two
TEXT: H frequencies input to the circuit, the analysis finds out the
TEXT: H complex values of the circuit variables at the sum and
TEXT: H difference of the input frequencies, and at the difference
TEXT: H of the smaller frequency from the second harmonic of the
TEXT: H larger frequency.
TEXT: H
TEXT: H Distortion analysis is supported for the following non-
TEXT: H linear devices: diodes (DIO), BJT, JFET, MOSFETs (levels 1,
TEXT: H 2, 3, 4/BSIM1, 5/BSIM2, and 6) and MESFETS. All linear dev-
TEXT: H ices are automatically supported by distortion analysis. If
TEXT: H there are switches present in the circuit, the analysis con-
TEXT: H tinues to be accurate provided the switches do not change
TEXT: H state under the small excitations used for distortion calcu-
TEXT: H lations.
TEXT: H
SUBJECT: Sensitivity Analysis
TITLE: Sensitivity Analysis
TEXT: H
TEXT: H _1._1._6. _S_e_n_s_i_t_i_v_i_t_y _A_n_a_l_y_s_i_s
TEXT: H
TEXT: H
TEXT: H Spice3 will calculate either the DC operating-point
TEXT: H sensitivity or the AC small-signal sensitivity of an output
TEXT: H variable with respect to all circuit variables, including
TEXT: H model parameters. Spice calculates the difference in an
TEXT: H output variable (either a node voltage or a branch current)
TEXT: H by perturbing each parameter of each device independently.
TEXT: H Since the method is a numerical approximation, the results
TEXT: H may demonstrate second order effects in highly sensitive
TEXT: H parameters, or may fail to show very low but non-zero sensi-
TEXT: H tivity. Further, since each variable is perturb by a small
TEXT: H fraction of its value, zero-valued parameters are not analy-
TEXT: H ized (this has the benefit of reducing what is usually a
TEXT: H very large amount of data).
TEXT: H
SUBJECT: Noise Analysis
TITLE: Noise Analysis
TEXT: H
TEXT: H _1._1._7. _N_o_i_s_e _A_n_a_l_y_s_i_s
TEXT: H
TEXT: H
TEXT: H The noise analysis portion of SPICE does analysis
TEXT: H device-generated noise for the given circuit. When provided
TEXT: H with an input source and an output port, the analysis calcu-
TEXT: H lates the noise contributions of each device (and each noise
TEXT: H generator within the device) to the output port voltage. It
TEXT: H also calculates the input noise to the circuit, equivalent
TEXT: H to the output noise referred to the specified input source.
TEXT: H This is done for every frequency point in a specified range
TEXT: H - the calculated value of the noise corresponds to the spec-
TEXT: H tral density of the circuit variable viewed as a stationary
TEXT: H gaussian stochastic process.
TEXT: H
TEXT: H After calculating the spectral densities, noise
TEXT: H analysis integrates these values over the specified fre-
TEXT: H quency range to arrive at the total noise voltage/current
TEXT: H (over this frequency range). This calculated value
TEXT: H corresponds to the variance of the circuit variable viewed
TEXT: H as a stationary gaussian process.
SUBJECT: ANALYSIS AT DIFFERENT TEMPERATURES
TITLE: ANALYSIS AT DIFFERENT TEMPERATURES
TEXT: H
TEXT: H _1._2. _A_N_A_L_Y_S_I_S _A_T _D_I_F_F_E_R_E_N_T _T_E_M_P_E_R_A_T_U_R_E_S
TEXT: H
TEXT: H
TEXT: H All input data for SPICE is assumed to have been meas-
TEXT: H o
TEXT: H ured at a nominal temperature of 27 C, which can be changed
TEXT: H by use of the TNOM parameter on the .OPTION control line.
TEXT: H This value can further be overridden for any device which
TEXT: H models temperature effects by specifying the TNOM parameter
TEXT: H on the model itself. The circuit simulation is performed at
TEXT: H o
TEXT: H a temperature of 27 C, unless overridden by a TEMP parameter
TEXT: H on the .OPTION control line. Individual instances may
TEXT: H further override the circuit temperature through the specif-
TEXT: H ication of a TEMP parameter on the instance.
TEXT: H
TEXT: H Temperature dependent support is provided for resis-
TEXT: H tors, diodes, JFETs, BJTs, and level 1, 2, and 3 MOSFETs.
TEXT: H BSIM (levels 4 and 5) MOSFETs have an alternate temperature
TEXT: H dependency scheme which adjusts all of the model parameters
TEXT: H before input to SPICE. For details of the BSIM temperature
TEXT: H adjustment, see [6] and [7].
TEXT: H
TEXT: H
TEXT: H Temperature appears explicitly in the exponential terms
TEXT: H of the BJT and diode model equations. In addition, satura-
TEXT: H tion currents have a built-in temperature dependence. The
TEXT: H temperature dependence of the saturation current in the BJT
TEXT: H models is determined by:
TEXT: H
TEXT: H XTI
TEXT: H |T | | E q(T T )|
TEXT: H 1 g 1 0
TEXT: H I (T ) = I (T ) |--| exp|-----------|
TEXT: H S 1 S 0
TEXT: H |T | |k (T - T )|
TEXT: H 0 1 0
TEXT: H
TEXT: H
TEXT: H
TEXT: H where k is Boltzmann's constant, q is the electronic
TEXT: H charge, E is the energy gap which is a model parameter,
TEXT: H G
TEXT: H and XTI is the saturation current temperature exponent
TEXT: H (also a model parameter, and usually equal to 3).
TEXT: H
TEXT: H
TEXT: H
TEXT: H The temperature dependence of forward and reverse beta
TEXT: H is according to the formula:
TEXT: H
TEXT: H XTB
TEXT: H |T |
TEXT: H 1
TEXT: H B(T ) = B(T ) |--|
TEXT: H 1 0
TEXT: H |T |
TEXT: H 0
TEXT: H
TEXT: H
TEXT: H
TEXT: H where T and T are in degrees Kelvin, and XTB is a
TEXT: H 1 0
TEXT: H user-supplied model parameter. Temperature effects on
TEXT: H beta are carried out by appropriate adjustment to the
TEXT: H values of B , I , B , and I (spice model parameters
TEXT: H F SE R SC
TEXT: H BF, ISE, BR, and ISC, respectively).
TEXT: H
TEXT: H
TEXT: H
TEXT: H Temperature dependence of the saturation current in the
TEXT: H junction diode model is determined by:
TEXT: H
TEXT: H XTI
TEXT: H ---
TEXT: H N
TEXT: H |T | | E q(T T ) |
TEXT: H 1 g 1 0
TEXT: H I (T ) = I (T ) |--| exp|-------------|
TEXT: H S 1 S 0
TEXT: H |T | |N k (T - T )|
TEXT: H 0 1 0
TEXT: H
TEXT: H
TEXT: H
TEXT: H where N is the emission coefficient, which is a model
TEXT: H parameter, and the other symbols have the same meaning
TEXT: H as above. Note that for Schottky barrier diodes, the
TEXT: H value of the saturation current temperature exponent,
TEXT: H XTI, is usually 2.
TEXT: H
TEXT: H
TEXT: H
TEXT: H Temperature appears explicitly in the value of junction
TEXT: H potential, U (in spice PHI), for all the device models. The
TEXT: H temperature dependence is determined by:
TEXT: H
TEXT: H
TEXT: H | N N |
TEXT: H a d
TEXT: H kT |------ |
TEXT: H U(T) = -- log 2
TEXT: H q e |N (T) |
TEXT: H i
TEXT: H
TEXT: H
TEXT: H where k is Boltzmann's constant, q is the electronic
TEXT: H charge, N is the acceptor impurity density, N is the
TEXT: H a d
TEXT: H donor impurity density, N is the intrinsic carrier con-
TEXT: H i
TEXT: H centration, and E is the energy gap.
TEXT: H g
TEXT: H
TEXT: H
TEXT: H
TEXT: H Temperature appears explicitly in the value of surface
TEXT: H mobility, M (or UO), for the MOSFET model. The temperature
TEXT: H 0
TEXT: H dependence is determined by:
TEXT: H
TEXT: H
TEXT: H M (T )
TEXT: H 0 0
TEXT: H M (T) = -------
TEXT: H 0 1.5
TEXT: H | T|
TEXT: H |--|
TEXT: H |T |
TEXT: H 0
TEXT: H
TEXT: H
TEXT: H
TEXT: H
TEXT: H
TEXT: H
TEXT: H The effects of temperature on resistors is modeled by
TEXT: H the formula:
TEXT: H
TEXT: H
TEXT: H 2
TEXT: H R(T) = R(T ) [1 + TC (T - T ) + TC (T - T ) ]
TEXT: H 0 1 0 2 0
TEXT: H
TEXT: H
TEXT: H
TEXT: H where T is the circuit temperature, T is the nominal
TEXT: H 0
TEXT: H temperature, and TC and TC are the first- and second-
TEXT: H 1 2
TEXT: H order temperature coefficients.
TEXT: H
SUBJECT: CONVERGENCE
TITLE: CONVERGENCE
TEXT: H
TEXT: H _1._3. _C_O_N_V_E_R_G_E_N_C_E
TEXT: H
TEXT: H
TEXT: H Both dc and transient solutions are obtained by an
TEXT: H iterative process which is terminated when both of the fol-
TEXT: H lowing conditions hold:
TEXT: H
TEXT: H
TEXT: H 1) The nonlinear branch currents converge to within a
TEXT: H tolerance of 0.1% or 1 picoamp (1.0e-12 Amp), whichever
TEXT: H is larger.
TEXT: H
TEXT: H 2) The node voltages converge to within a tolerance of
TEXT: H 0.1% or 1 microvolt (1.0e-6 Volt), whichever is larger.
TEXT: H
TEXT: H Although the algorithm used in SPICE has been found to
TEXT: H be very reliable, in some cases it fails to converge to a
TEXT: H solution. When this failure occurs, the program terminates
TEXT: H the job.
TEXT: H
TEXT: H Failure to converge in dc analysis is usually due to an
TEXT: H error in specifying circuit connections, element values, or
TEXT: H model parameter values. Regenerative switching circuits or
TEXT: H circuits with positive feedback probably will not converge
TEXT: H in the dc analysis unless the OFF option is used for some of
TEXT: H the devices in the feedback path, or the .NODESET control
TEXT: H line is used to force the circuit to converge to the desired
TEXT: H state.
SUBJECT: CIRCUIT DESCRIPTION
TITLE: CIRCUIT DESCRIPTION
TEXT: H
TEXT: H _2. _C_I_R_C_U_I_T _D_E_S_C_R_I_P_T_I_O_N
SUBTOPIC: NGSPICE:GENERAL STRUCTURE AND CONVENTIONS
SUBTOPIC: NGSPICE:TITLE LINE COMMENT LINES AND .END LINE
SUBTOPIC: NGSPICE:DEVICE MODELS
SUBTOPIC: NGSPICE:SUBCIRCUITS
SUBTOPIC: NGSPICE:COMBINING FILES
SUBJECT: GENERAL STRUCTURE AND CONVENTIONS
TITLE: GENERAL STRUCTURE AND CONVENTIONS
TEXT: H
TEXT: H _2._1. _G_E_N_E_R_A_L _S_T_R_U_C_T_U_R_E _A_N_D _C_O_N_V_E_N_T_I_O_N_S
TEXT: H
TEXT: H
TEXT: H The circuit to be analyzed is described to SPICE by a
TEXT: H set of element lines, which define the circuit topology and
TEXT: H element values, and a set of control lines, which define the
TEXT: H model parameters and the run controls. The first line in
TEXT: H the input file must be the title, and the last line must be
TEXT: H ".END". The order of the remaining lines is arbitrary
TEXT: H (except, of course, that continuation lines must immediately
TEXT: H follow the line being continued).
TEXT: H
TEXT: H Each element in the circuit is specified by an element
TEXT: H line that contains the element name, the circuit nodes to
TEXT: H which the element is connected, and the values of the param-
TEXT: H eters that determine the electrical characteristics of the
TEXT: H element. The first letter of the element name specifies the
TEXT: H element type. The format for the SPICE element types is
TEXT: H given in what follows. The strings XXXXXXX, YYYYYYY, and
TEXT: H ZZZZZZZ denote arbitrary alphanumeric strings. For example,
TEXT: H a resistor name must begin with the letter R and can contain
TEXT: H one or more characters. Hence, R, R1, RSE, ROUT, and
TEXT: H R3AC2ZY are valid resistor names. Details of each type of
TEXT: H device are supplied in a following section.
TEXT: H
TEXT: H Fields on a line are separated by one or more blanks, a
TEXT: H comma, an equal ('=') sign, or a left or right parenthesis;
TEXT: H extra spaces are ignored. A line may be continued by enter-
TEXT: H ing a '+' (plus) in column 1 of the following line; SPICE
TEXT: H continues reading beginning with column 2.
TEXT: H
TEXT: H A name field must begin with a letter (A through Z) and
TEXT: H cannot contain any delimiters.
TEXT: H
TEXT: H
TEXT: H A number field may be an integer field (12, -44), a
TEXT: H floating point field (3.14159), either an integer or float-
TEXT: H ing point number followed by an integer exponent (1e-14,
TEXT: H 2.65e3), or either an integer or a floating point number
TEXT: H followed by one of the following scale factors:
TEXT: H
TEXT: H 12 9 6 3 -6
TEXT: H T = 10 G = 10 Meg = 10 K = 10 mil = 25.4
TEXT: H -3 -6 -9 -12 -15
TEXT: H m = 10 u (or M) = 10 n = 10 p = 10 f = 10
TEXT: H
TEXT: H
TEXT: H
TEXT: H Letters immediately following a number that are not scale
TEXT: H factors are ignored, and letters immediately following a
TEXT: H scale factor are ignored. Hence, 10, 10V, 10Volts, and 10Hz
TEXT: H all represent the same number, and M, MA, MSec, and MMhos
TEXT: H all represent the same scale factor. Note that 1000,
TEXT: H 1000.0, 1000Hz, 1e3, 1.0e3, 1KHz, and 1K all represent the
TEXT: H same number.
TEXT: H
TEXT: H Nodes names may be arbitrary character strings. The
TEXT: H datum (ground) node must be named '0'. Note the difference
TEXT: H in SPICE3 where the nodes are treated as character strings
TEXT: H and not evaluated as numbers, thus '0' and '00' are distinct
TEXT: H nodes in SPICE3 but not in SPICE2. The circuit cannot con-
TEXT: H tain a loop of voltage sources and/or inductors and cannot
TEXT: H contain a cut-set of current sources and/or capacitors.
TEXT: H Each node in the circuit must have a dc path to ground.
TEXT: H Every node must have at least two connections except for
TEXT: H transmission line nodes (to permit unterminated transmission
TEXT: H lines) and MOSFET substrate nodes (which have two internal
TEXT: H connections anyway).
TEXT: H
SUBJECT: TITLE LINE COMMENT LINES AND .END LINE
TITLE: TITLE LINE, COMMENT LINES AND .END LINE
TEXT: H
TEXT: H _2._2. _T_I_T_L_E _L_I_N_E, _C_O_M_M_E_N_T _L_I_N_E_S _A_N_D ._E_N_D _L_I_N_E
TEXT: H
SUBTOPIC: NGSPICE:Title Line
SUBTOPIC: NGSPICE:.END Line
SUBTOPIC: NGSPICE:Comments
SUBJECT: Title Line
TITLE: Title Line
TEXT: H
TEXT: H _2._2._1. _T_i_t_l_e _L_i_n_e
TEXT: H
TEXT: H
TEXT: H _E_x_a_m_p_l_e_s:
TEXT: H
TEXT: H POWER AMPLIFIER CIRCUIT
TEXT: H TEST OF CAM CELL
TEXT: H
TEXT: H
TEXT: H The title line must be the first in the input file.
TEXT: H Its contents are printed verbatim as the heading for each
TEXT: H section of output.
TEXT: H
TEXT: H
SUBJECT: .END Line
TITLE: .END Line
TEXT: H
TEXT: H _2._2._2. ._E_N_D _L_i_n_e
TEXT: H
TEXT: H
TEXT: H _E_x_a_m_p_l_e_s:
TEXT: H
TEXT: H .END
TEXT: H
TEXT: H
TEXT: H The "End" line must always be the last in the input
TEXT: H file. Note that the period is an integral part of the
TEXT: H name.
TEXT: H
TEXT: H
TEXT: H
SUBJECT: Comments
TITLE: Comments
TEXT: H
TEXT: H _2._2._3. _C_o_m_m_e_n_t_s
TEXT: H
TEXT: H _G_e_n_e_r_a_l _F_o_r_m:
TEXT: H
TEXT: H * <any comment>
TEXT: H
TEXT: H
TEXT: H _E_x_a_m_p_l_e_s:
TEXT: H
TEXT: H * RF=1K Gain should be 100
TEXT: H * Check open-loop gain and phase margin
TEXT: H
TEXT: H
TEXT: H The asterisk in the first column indicates that
TEXT: H this line is a comment line. Comment lines may be
TEXT: H placed anywhere in the circuit description. Note that
TEXT: H SPICE3 also considers any line with leading white space
TEXT: H to be a comment.
TEXT: H
TEXT: H
SUBJECT: DEVICE MODELS
TITLE: DEVICE MODELS
TEXT: H
TEXT: H _2._3. _D_E_V_I_C_E _M_O_D_E_L_S
TEXT: H
TEXT: H _G_e_n_e_r_a_l _f_o_r_m:
TEXT: H
TEXT: H .MODEL MNAME TYPE(PNAME1=PVAL1 PNAME2=PVAL2 ... )
TEXT: H
TEXT: H
TEXT: H _E_x_a_m_p_l_e_s:
TEXT: H
TEXT: H .MODEL MOD1 NPN (BF=50 IS=1E-13 VBF=50)
TEXT: H
TEXT: H
TEXT: H
TEXT: H Most simple circuit elements typically require only a
TEXT: H few parameter values. However, some devices (semiconductor
TEXT: H devices in particular) that are included in SPICE require
TEXT: H many parameter values. Often, many devices in a circuit are
TEXT: H defined by the same set of device model parameters. For
TEXT: H these reasons, a set of device model parameters is defined
TEXT: H on a separate .MODEL line and assigned a unique model name.
TEXT: H The device element lines in SPICE then refer to the model
TEXT: H name.
TEXT: H
TEXT: H For these more complex device types, each device ele-
TEXT: H ment line contains the device name, the nodes to which the
TEXT: H device is connected, and the device model name. In addi-
TEXT: H tion, other optional parameters may be specified for some
TEXT: H devices: geometric factors and an initial condition (see
TEXT: H the following section on Transistors and Diodes for more de-
TEXT: H tails).
TEXT: H
TEXT: H MNAME in the above is the model name, and type is one
TEXT: H of the following fifteen types:
TEXT: H
TEXT: H R Semiconductor resistor model
TEXT: H C Semiconductor capacitor model
TEXT: H SW Voltage controlled switch
TEXT: H CSW Current controlled switch
TEXT: H URC Uniform distributed RC model
TEXT: H LTRA Lossy transmission line model
TEXT: H D Diode model
TEXT: H NPN NPN BJT model
TEXT: H PNP PNP BJT model
TEXT: H NJF N-channel JFET model
TEXT: H PJF P-channel JFET model
TEXT: H NMOS N-channel MOSFET model
TEXT: H PMOS P-channel MOSFET model
TEXT: H NMF N-channel MESFET model
TEXT: H PMF P-channel MESFET model
TEXT: H
TEXT: H
TEXT: H
TEXT: H Parameter values are defined by appending the parameter
TEXT: H name followed by an equal sign and the parameter value.
TEXT: H Model parameters that are not given a value are assigned the
TEXT: H default values given below for each model type. Models,
TEXT: H model parameters, and default values are listed in the next
TEXT: H section along with the description of device element lines.
TEXT: H
SUBJECT: SUBCIRCUITS
TITLE: SUBCIRCUITS
TEXT: H
TEXT: H _2._4. _S_U_B_C_I_R_C_U_I_T_S
TEXT: H
TEXT: H
TEXT: H A subcircuit that consists of SPICE elements can be
TEXT: H defined and referenced in a fashion similar to device
TEXT: H models. The subcircuit is defined in the input file by a
TEXT: H grouping of element lines; the program then automatically
TEXT: H inserts the group of elements wherever the subcircuit is
TEXT: H referenced. There is no limit on the size or complexity of
TEXT: H subcircuits, and subcircuits may contain other subcircuits.
TEXT: H An example of subcircuit usage is given in Appendix A.
TEXT: H
TEXT: H
SUBTOPIC: NGSPICE:.SUBCKT Line
SUBTOPIC: NGSPICE:.ENDS Line
SUBTOPIC: NGSPICE:Subcircuit Calls
SUBJECT: .SUBCKT Line
TITLE: .SUBCKT Line
TEXT: H
TEXT: H _2._4._1. ._S_U_B_C_K_T _L_i_n_e
TEXT: H
TEXT: H _G_e_n_e_r_a_l _f_o_r_m:
TEXT: H
TEXT: H .SUBCKT subnam N1 <N2 N3 ...>
TEXT: H
TEXT: H
TEXT: H _E_x_a_m_p_l_e_s:
TEXT: H
TEXT: H .SUBCKT OPAMP 1 2 3 4
TEXT: H
TEXT: H
TEXT: H
TEXT: H A circuit definition is begun with a .SUBCKT line.
TEXT: H SUBNAM is the subcircuit name, and N1, N2, ... are the
TEXT: H external nodes, which cannot be zero. The group of element
TEXT: H lines which immediately follow the .SUBCKT line define the
TEXT: H subcircuit. The last line in a subcircuit definition is the
TEXT: H .ENDS line (see below). Control lines may not appear within
TEXT: H a subcircuit definition; however, subcircuit definitions
TEXT: H may contain anything else, including other subcircuit defin-
TEXT: H itions, device models, and subcircuit calls (see below).
TEXT: H Note that any device models or subcircuit definitions
TEXT: H included as part of a subcircuit definition are strictly
TEXT: H local (i.e., such models and definitions are not known out-
TEXT: H side the subcircuit definition). Also, any element nodes
TEXT: H not included on the .SUBCKT line are strictly local, with
TEXT: H the exception of 0 (ground) which is always global.
TEXT: H
TEXT: H
SUBJECT: .ENDS Line
TITLE: .ENDS Line
TEXT: H
TEXT: H _2._4._2. ._E_N_D_S _L_i_n_e
TEXT: H
TEXT: H _G_e_n_e_r_a_l _f_o_r_m:
TEXT: H
TEXT: H .ENDS <SUBNAM>
TEXT: H
TEXT: H
TEXT: H _E_x_a_m_p_l_e_s:
TEXT: H
TEXT: H .ENDS OPAMP
TEXT: H
TEXT: H
TEXT: H The "Ends" line must be the last one for any sub-
TEXT: H circuit definition. The subcircuit name, if included,
TEXT: H indicates which subcircuit definition is being terminat-
TEXT: H ed; if omitted, all subcircuits being defined are ter-
TEXT: H minated. The name is needed only when nested subcircuit
TEXT: H definitions are being made.
TEXT: H
TEXT: H
TEXT: H
SUBJECT: Subcircuit Calls
TITLE: Subcircuit Calls
TEXT: H
TEXT: H _2._4._3. _S_u_b_c_i_r_c_u_i_t _C_a_l_l_s
TEXT: H
TEXT: H _G_e_n_e_r_a_l _f_o_r_m:
TEXT: H
TEXT: H XYYYYYYY N1 <N2 N3 ...> SUBNAM
TEXT: H
TEXT: H
TEXT: H _E_x_a_m_p_l_e_s:
TEXT: H
TEXT: H X1 2 4 17 3 1 MULTI
TEXT: H
TEXT: H
TEXT: H Subcircuits are used in SPICE by specifying
TEXT: H pseudo-elements beginning with the letter X, followed by
TEXT: H the circuit nodes to be used in expanding the subcir-
TEXT: H cuit.
TEXT: H
TEXT: H
SUBJECT: COMBINING FILES
TITLE: COMBINING FILES: .INCLUDE LINES
TEXT: H
TEXT: H _2._5. _C_O_M_B_I_N_I_N_G _F_I_L_E_S: ._I_N_C_L_U_D_E _L_I_N_E_S
TEXT: H
TEXT: H _G_e_n_e_r_a_l _f_o_r_m:
TEXT: H
TEXT: H .INCLUDE _f_i_l_e_n_a_m_e
TEXT: H
TEXT: H
TEXT: H _E_x_a_m_p_l_e_s:
TEXT: H
TEXT: H .INCLUDE /users/spice/common/wattmeter.cir
TEXT: H
TEXT: H
TEXT: H Frequently, portions of circuit descriptions will be
TEXT: H reused in several input files, particularly with common
TEXT: H models and subcircuits. In any spice input file, the
TEXT: H ".include" line may be used to copy some other file as if
TEXT: H that second file appeared in place of the ".include" line in
TEXT: H the original file. There is no restriction on the file name
TEXT: H imposed by spice beyond those imposed by the local operating
TEXT: H system.
SUBJECT: CIRCUIT ELEMENTS AND MODELS
TITLE: CIRCUIT ELEMENTS AND MODELS
TEXT: H
TEXT: H _3. _C_I_R_C_U_I_T _E_L_E_M_E_N_T_S _A_N_D _M_O_D_E_L_S
TEXT: H
TEXT: H
TEXT: H Data fields that are enclosed in less-than and
TEXT: H greater-than signs ('< >') are optional. All indicated
TEXT: H punctuation (parentheses, equal signs, etc.) is optional but
TEXT: H indicate the presence of any delimiter. Further, future
TEXT: H implementations may require the punctuation as stated. A
TEXT: H consistent style adhering to the punctuation shown here
TEXT: H makes the input easier to understand. With respect to
TEXT: H branch voltages and currents, SPICE uniformly uses the asso-
TEXT: H ciated reference convention (current flows in the direction
TEXT: H of voltage drop).
SUBTOPIC: NGSPICE:ELEMENTARY DEVICES
SUBTOPIC: NGSPICE:VOLTAGE AND CURRENT SOURCES
SUBTOPIC: NGSPICE:TRANSMISSION LINES
SUBTOPIC: NGSPICE:TRANSISTORS AND DIODES
SUBJECT: ELEMENTARY DEVICES
TITLE: ELEMENTARY DEVICES
TEXT: H
TEXT: H _3._1. _E_L_E_M_E_N_T_A_R_Y _D_E_V_I_C_E_S
TEXT: H
SUBTOPIC: NGSPICE:Resistors
SUBTOPIC: NGSPICE:Semiconductor Resistors
SUBTOPIC: NGSPICE:Semiconductor Resistor Model
SUBTOPIC: NGSPICE:Capacitors
SUBTOPIC: NGSPICE:Semiconductor Capacitors
SUBTOPIC: NGSPICE:Semiconductor Capacitor Model
SUBTOPIC: NGSPICE:Inductors
SUBTOPIC: NGSPICE:Coupled Inductors
SUBTOPIC: NGSPICE:Switches
SUBTOPIC: NGSPICE:Switch Model
SUBJECT: Resistors
TITLE: Resistors
TEXT: H
TEXT: H _3._1._1. _R_e_s_i_s_t_o_r_s
TEXT: H
TEXT: H _G_e_n_e_r_a_l _f_o_r_m:
TEXT: H
TEXT: H RXXXXXXX N1 N2 VALUE
TEXT: H
TEXT: H
TEXT: H _E_x_a_m_p_l_e_s:
TEXT: H
TEXT: H R1 1 2 100
TEXT: H RC1 12 17 1K
TEXT: H
TEXT: H
TEXT: H N1 and N2 are the two element nodes. VALUE is the
TEXT: H resistance (in ohms) and may be positive or negative but not
TEXT: H zero.
TEXT: H
TEXT: H
SUBJECT: Semiconductor Resistors
TITLE: Semiconductor Resistors
TEXT: H
TEXT: H _3._1._2. _S_e_m_i_c_o_n_d_u_c_t_o_r _R_e_s_i_s_t_o_r_s
TEXT: H
TEXT: H _G_e_n_e_r_a_l _f_o_r_m:
TEXT: H
TEXT: H RXXXXXXX N1 N2 <VALUE> <MNAME> <L=LENGTH> <W=WIDTH> <TEMP=T>
TEXT: H
TEXT: H
TEXT: H _E_x_a_m_p_l_e_s:
TEXT: H
TEXT: H RLOAD 2 10 10K
TEXT: H RMOD 3 7 RMODEL L=10u W=1u
TEXT: H
TEXT: H
TEXT: H
TEXT: H This is the more general form of the resistor presented
TEXT: H in section 6.1, and allows the modeling of temperature
TEXT: H effects and for the calculation of the actual resistance
TEXT: H value from strictly geometric information and the specifica-
TEXT: H tions of the process. If VALUE is specified, it overrides
TEXT: H the geometric information and defines the resistance. If
TEXT: H MNAME is specified, then the resistance may be calculated
TEXT: H from the process information in the model MNAME and the
TEXT: H given LENGTH and WIDTH. If VALUE is not specified, then
TEXT: H MNAME and LENGTH must be specified. If WIDTH is not speci-
TEXT: H fied, then it is taken from the default width given in the
TEXT: H model. The (optional) TEMP value is the temperature at
TEXT: H which this device is to operate, and overrides the tempera-
TEXT: H ture specification on the .OPTION control line.
TEXT: H
TEXT: H
SUBJECT: Semiconductor Resistor Model
TITLE: Semiconductor Resistor Model (R)
TEXT: H
TEXT: H _3._1._3. _S_e_m_i_c_o_n_d_u_c_t_o_r _R_e_s_i_s_t_o_r _M_o_d_e_l (_R)
TEXT: H
TEXT: H
TEXT: H The resistor model consists of process-related device
TEXT: H data that allow the resistance to be calculated from
TEXT: H geometric information and to be corrected for temperature.
TEXT: H The parameters available are:
TEXT: H
TEXT: H name parameter units default example
TEXT: H
TEXT: H o
TEXT: H TC1 first order temperature coeff. Z/ C 0.0 -
TEXT: H o 2
TEXT: H TC2 second order temperature coeff. Z/ C 0.0 -
TEXT: H RSH sheet resistance Z/[] - 50
TEXT: H DEFW default width meters 1e-6 2e-6
TEXT: H NARROW narrowing due to side etching meters 0.0 1e-7
TEXT: H o
TEXT: H TNOM parameter measurement temperature C 27 50
TEXT: H
TEXT: H
TEXT: H
TEXT: H The sheet resistance is used with the narrowing parame-
TEXT: H ter and L and W from the resistor device to determine the
TEXT: H nominal resistance by the formula
TEXT: H
TEXT: H L - NARROW
TEXT: H R = RSH ----------
TEXT: H W - NARROW
TEXT: H
TEXT: H DEFW is used to supply a default value for W if one is not
TEXT: H specified for the device. If either RSH or L is not speci-
TEXT: H fied, then the standard default resistance value of 1k Z is
TEXT: H used. TNOM is used to override the circuit-wide value given
TEXT: H on the .OPTIONS control line where the parameters of this
TEXT: H model have been measured at a different temperature. After
TEXT: H the nominal resistance is calculated, it is adjusted for
TEXT: H temperature by the formula:
TEXT: H
TEXT: H 2
TEXT: H R(T) = R(T ) [1 + TC1 (T - T ) + TC2 (T-T ) ]
TEXT: H 0 0 0
TEXT: H
TEXT: H
TEXT: H
SUBJECT: Capacitors
TITLE: Capacitors
TEXT: H
TEXT: H _3._1._4. _C_a_p_a_c_i_t_o_r_s
TEXT: H
TEXT: H _G_e_n_e_r_a_l _f_o_r_m:
TEXT: H
TEXT: H CXXXXXXX N+ N- VALUE <IC=INCOND>
TEXT: H
TEXT: H
TEXT: H _E_x_a_m_p_l_e_s:
TEXT: H
TEXT: H CBYP 13 0 1UF
TEXT: H COSC 17 23 10U IC=3V
TEXT: H
TEXT: H
TEXT: H N+ and N- are the positive and negative element
TEXT: H nodes, respectively. VALUE is the capacitance in
TEXT: H Farads.
TEXT: H
TEXT: H
TEXT: H The (optional) initial condition is the initial (time-
TEXT: H zero) value of capacitor voltage (in Volts). Note that the
TEXT: H initial conditions (if any) apply 'only' if the UIC option
TEXT: H is specified on the .TRAN control line.
TEXT: H
TEXT: H
SUBJECT: Semiconductor Capacitors
TITLE: Semiconductor Capacitors
TEXT: H
TEXT: H _3._1._5. _S_e_m_i_c_o_n_d_u_c_t_o_r _C_a_p_a_c_i_t_o_r_s
TEXT: H
TEXT: H _G_e_n_e_r_a_l _f_o_r_m:
TEXT: H
TEXT: H CXXXXXXX N1 N2 <VALUE> <MNAME> <L=LENGTH> <W=WIDTH> <IC=VAL>
TEXT: H
TEXT: H
TEXT: H _E_x_a_m_p_l_e_s:
TEXT: H
TEXT: H CLOAD 2 10 10P
TEXT: H CMOD 3 7 CMODEL L=10u W=1u
TEXT: H
TEXT: H
TEXT: H
TEXT: H This is the more general form of the Capacitor
TEXT: H presented in section 6.2, and allows for the calculation of
TEXT: H the actual capacitance value from strictly geometric infor-
TEXT: H mation and the specifications of the process. If VALUE is
TEXT: H specified, it defines the capacitance. If MNAME is speci-
TEXT: H fied, then the capacitance is calculated from the process
TEXT: H information in the model MNAME and the given LENGTH and
TEXT: H WIDTH. If VALUE is not specified, then MNAME and LENGTH
TEXT: H must be specified. If WIDTH is not specified, then it is
TEXT: H taken from the default width given in the model. Either
TEXT: H VALUE or MNAME, LENGTH, and WIDTH may be specified, but not
TEXT: H both sets.
TEXT: H
TEXT: H
SUBJECT: Semiconductor Capacitor Model
TITLE: Semiconductor Capacitor Model (C)
TEXT: H
TEXT: H _3._1._6. _S_e_m_i_c_o_n_d_u_c_t_o_r _C_a_p_a_c_i_t_o_r _M_o_d_e_l (_C)
TEXT: H
TEXT: H
TEXT: H The capacitor model contains process information that
TEXT: H may be used to compute the capacitance from strictly
TEXT: H geometric information.
TEXT: H
TEXT: H
TEXT: H
TEXT: H name parameter units default example
TEXT: H
TEXT: H 2
TEXT: H CJ junction bottom capacitance F/meters - 5e-5
TEXT: H CJSW junction sidewall capacitance F/meters - 2e-11
TEXT: H DEFW default device width meters 1e-6 2e-6
TEXT: H NARROW narrowing due to side etching meters 0.0 1e-7
TEXT: H
TEXT: H
TEXT: H
TEXT: H
TEXT: H
TEXT: H The capacitor has a capacitance computed as
TEXT: H
TEXT: H CAP = CJ (LENGTH - NARROW) (WIDTH - NARROW) + 2 CJSW (LENGTH + WIDTH - 2 NARROW)
TEXT: H
TEXT: H
SUBJECT: Inductors
TITLE: Inductors
TEXT: H
TEXT: H _3._1._7. _I_n_d_u_c_t_o_r_s
TEXT: H
TEXT: H _G_e_n_e_r_a_l _f_o_r_m:
TEXT: H
TEXT: H LYYYYYYY N+ N- VALUE <IC=INCOND>
TEXT: H
TEXT: H
TEXT: H _E_x_a_m_p_l_e_s:
TEXT: H
TEXT: H LLINK 42 69 1UH
TEXT: H LSHUNT 23 51 10U IC=15.7MA
TEXT: H
TEXT: H
TEXT: H N+ and N- are the positive and negative element
TEXT: H nodes, respectively. VALUE is the inductance in Hen-
TEXT: H ries.
TEXT: H
TEXT: H
TEXT: H The (optional) initial condition is the initial (time-
TEXT: H zero) value of inductor current (in Amps) that flows from
TEXT: H N+, through the inductor, to N-. Note that the initial con-
TEXT: H ditions (if any) apply only if the UIC option is specified
TEXT: H on the .TRAN analysis line.
TEXT: H
TEXT: H
SUBJECT: Coupled Inductors
TITLE: Coupled (Mutual) Inductors
TEXT: H
TEXT: H _3._1._8. _C_o_u_p_l_e_d (_M_u_t_u_a_l) _I_n_d_u_c_t_o_r_s
TEXT: H
TEXT: H _G_e_n_e_r_a_l _f_o_r_m:
TEXT: H
TEXT: H KXXXXXXX LYYYYYYY LZZZZZZZ VALUE
TEXT: H
TEXT: H
TEXT: H _E_x_a_m_p_l_e_s:
TEXT: H
TEXT: H K43 LAA LBB 0.999
TEXT: H KXFRMR L1 L2 0.87
TEXT: H
TEXT: H
TEXT: H LYYYYYYY and LZZZZZZZ are the names of the two cou-
TEXT: H pled inductors, and VALUE is the coefficient of cou-
TEXT: H pling, K, which must be greater than 0 and less than or
TEXT: H equal to 1. Using the 'dot' convention, place a 'dot'
TEXT: H on the first node of each inductor.
TEXT: H
TEXT: H
TEXT: H
SUBJECT: Switches
TITLE: Switches
TEXT: H
TEXT: H _3._1._9. _S_w_i_t_c_h_e_s
TEXT: H
TEXT: H _G_e_n_e_r_a_l _f_o_r_m:
TEXT: H
TEXT: H SXXXXXXX N+ N- NC+ NC- MODEL <ON><OFF>
TEXT: H WYYYYYYY N+ N- VNAM MODEL <ON><OFF>
TEXT: H
TEXT: H
TEXT: H _E_x_a_m_p_l_e_s:
TEXT: H
TEXT: H s1 1 2 3 4 switch1 ON
TEXT: H s2 5 6 3 0 sm2 off
TEXT: H Switch1 1 2 10 0 smodel1
TEXT: H w1 1 2 vclock switchmod1
TEXT: H W2 3 0 vramp sm1 ON
TEXT: H wreset 5 6 vclck lossyswitch OFF
TEXT: H
TEXT: H
TEXT: H Nodes 1 and 2 are the nodes between which the
TEXT: H switch terminals are connected. The model name is man-
TEXT: H datory while the initial conditions are optional. For
TEXT: H the voltage controlled switch, nodes 3 and 4 are the po-
TEXT: H sitive and negative controlling nodes respectively. For
TEXT: H the current controlled switch, the controlling current
TEXT: H is that through the specified voltage source. The
TEXT: H direction of positive controlling current flow is from
TEXT: H the positive node, through the source, to the negative
TEXT: H node.
TEXT: H
TEXT: H
TEXT: H
SUBJECT: Switch Model
TITLE: Switch Model (SW/CSW)
TEXT: H
TEXT: H _3._1._1_0. _S_w_i_t_c_h _M_o_d_e_l (_S_W/_C_S_W)
TEXT: H
TEXT: H
TEXT: H The switch model allows an almost ideal switch to be
TEXT: H described in SPICE. The switch is not quite ideal, in that
TEXT: H the resistance can not change from 0 to infinity, but must
TEXT: H always have a finite positive value. By proper selection of
TEXT: H the on and off resistances, they can be effectively zero and
TEXT: H infinity in comparison to other circuit elements. The
TEXT: H parameters available are:
TEXT: H
TEXT: H name parameter units default switch
TEXT: H
TEXT: H VT threshold voltage Volts 0.0 S
TEXT: H IT threshold current Amps 0.0 W
TEXT: H VH hysteresis voltage Volts 0.0 S
TEXT: H IH hysteresis current Amps 0.0 W
TEXT: H RON on resistance Z 1.0 both
TEXT: H ROFF off resistance Z 1/GMIN* both
TEXT: H
TEXT: H
TEXT: H
TEXT: H
TEXT: H *(See the .OPTIONS control line for a description of
TEXT: H GMIN, its default value results in an off-resistance of
TEXT: H 1.0e+12 ohms.)
TEXT: H
TEXT: H
TEXT: H The use of an ideal element that is highly nonlinear
TEXT: H such as a switch can cause large discontinuities to occur in
TEXT: H the circuit node voltages. A rapid change such as that
TEXT: H associated with a switch changing state can cause numerical
TEXT: H roundoff or tolerance problems leading to erroneous results
TEXT: H or timestep difficulties. The user of switches can improve
TEXT: H the situation by taking the following steps:
TEXT: H
TEXT: H First, it is wise to set ideal switch impedances just
TEXT: H high or low enough to be negligible with respect to other
TEXT: H circuit elements. Using switch impedances that are close to
TEXT: H "ideal" in all cases aggravates the problem of discontinui-
TEXT: H ties mentioned above. Of course, when modeling real devices
TEXT: H such as MOSFETS, the on resistance should be adjusted to a
TEXT: H realistic level depending on the size of the device being
TEXT: H modeled.
TEXT: H
TEXT: H If a wide range of ON to OFF resistance must be used in
TEXT: H the switches (ROFF/RON >1e+12), then the tolerance on errors
TEXT: H allowed during transient analysis should be decreased by
TEXT: H using the .OPTIONS control line and specifying TRTOL to be
TEXT: H less than the default value of 7.0. When switches are
TEXT: H placed around capacitors, then the option CHGTOL should also
TEXT: H be reduced. Suggested values for these two options are 1.0
TEXT: H and 1e-16 respectively. These changes inform SPICE3 to be
TEXT: H more careful around the switch points so that no errors are
TEXT: H made due to the rapid change in the circuit.
TEXT: H
SUBJECT: VOLTAGE AND CURRENT SOURCES
TITLE: VOLTAGE AND CURRENT SOURCES
TEXT: H
TEXT: H _3._2. _V_O_L_T_A_G_E _A_N_D _C_U_R_R_E_N_T _S_O_U_R_C_E_S
TEXT: H
SUBTOPIC: NGSPICE:Independent Sources
SUBTOPIC: NGSPICE:Linear Dependent Sources
SUBTOPIC: NGSPICE:Nonlinear Dependent Sources
SUBJECT: Independent Sources
TITLE: Independent Sources
TEXT: H
TEXT: H _3._2._1. _I_n_d_e_p_e_n_d_e_n_t _S_o_u_r_c_e_s
TEXT: H
TEXT: H _G_e_n_e_r_a_l _f_o_r_m:
TEXT: H
TEXT: H VXXXXXXX N+ N- <<DC> DC/TRAN VALUE> <AC <ACMAG <ACPHASE>>>
TEXT: H + <DISTOF1 <F1MAG <F1PHASE>>> <DISTOF2 <F2MAG <F2PHASE>>>
TEXT: H IYYYYYYY N+ N- <<DC> DC/TRAN VALUE> <AC <ACMAG <ACPHASE>>>
TEXT: H + <DISTOF1 <F1MAG <F1PHASE>>> <DISTOF2 <F2MAG <F2PHASE>>>
TEXT: H
TEXT: H
TEXT: H _E_x_a_m_p_l_e_s:
TEXT: H
TEXT: H VCC 10 0 DC 6
TEXT: H VIN 13 2 0.001 AC 1 SIN(0 1 1MEG)
TEXT: H ISRC 23 21 AC 0.333 45.0 SFFM(0 1 10K 5 1K)
TEXT: H VMEAS 12 9
TEXT: H VCARRIER 1 0 DISTOF1 0.1 -90.0
TEXT: H VMODULATOR 2 0 DISTOF2 0.01
TEXT: H IIN1 1 5 AC 1 DISTOF1 DISTOF2 0.001
TEXT: H
TEXT: H
TEXT: H N+ and N- are the positive and negative nodes, respec-
TEXT: H tively. Note that voltage sources need not be grounded.
TEXT: H Positive current is assumed to flow from the positive node,
TEXT: H through the source, to the negative node. A current source
TEXT: H of positive value forces current to flow out of the N+ node,
TEXT: H through the source, and into the N- node. Voltage sources,
TEXT: H in addition to being used for circuit excitation, are the
TEXT: H 'ammeters' for SPICE, that is, zero valued voltage sources
TEXT: H may be inserted into the circuit for the purpose of measur-
TEXT: H ing current. They of course have no effect on circuit
TEXT: H operation since they represent short-circuits.
TEXT: H
TEXT: H
TEXT: H DC/TRAN is the dc and transient analysis value of the
TEXT: H source. If the source value is zero both for dc and tran-
TEXT: H sient analyses, this value may be omitted. If the source
TEXT: H value is time-invariant (e.g., a power supply), then the
TEXT: H value may optionally be preceded by the letters DC.
TEXT: H
TEXT: H
TEXT: H ACMAG is the ac magnitude and ACPHASE is the ac phase.
TEXT: H The source is set to this value in the ac analysis. If
TEXT: H ACMAG is omitted following the keyword AC, a value of unity
TEXT: H is assumed. If ACPHASE is omitted, a value of zero is
TEXT: H assumed. If the source is not an ac small-signal input, the
TEXT: H keyword AC and the ac values are omitted.
TEXT: H
TEXT: H
TEXT: H DISTOF1 and DISTOF2 are the keywords that specify that
TEXT: H the independent source has distortion inputs at the frequen-
TEXT: H cies F1 and F2 respectively (see the description of the
TEXT: H .DISTO control line). The keywords may be followed by an
TEXT: H optional magnitude and phase. The default values of the
TEXT: H magnitude and phase are 1.0 and 0.0 respectively.
TEXT: H
TEXT: H
TEXT: H Any independent source can be assigned a time-dependent
TEXT: H value for transient analysis. If a source is assigned a
TEXT: H time-dependent value, the time-zero value is used for dc
TEXT: H analysis. There are five independent source functions:
TEXT: H pulse, exponential, sinusoidal, piece-wise linear, and
TEXT: H single-frequency FM. If parameters other than source values
TEXT: H are omitted or set to zero, the default values shown are
TEXT: H assumed. (TSTEP is the printing increment and TSTOP is the
TEXT: H final time (see the .TRAN control line for explanation)).
TEXT: H
TEXT: H
SUBTOPIC: NGSPICE:Pulse
SUBTOPIC: NGSPICE:Sinusoidal
SUBTOPIC: NGSPICE:Exponential
SUBTOPIC: NGSPICE:PieceWise Linear
SUBTOPIC: NGSPICE:SingleFrequency FM
SUBJECT: Pulse
TITLE: Pulse
TEXT: H
TEXT: H _3._2._1._1. _P_u_l_s_e
TEXT: H
TEXT: H _G_e_n_e_r_a_l _f_o_r_m:
TEXT: H
TEXT: H PULSE(V1 V2 TD TR TF PW PER)
TEXT: H
TEXT: H
TEXT: H _E_x_a_m_p_l_e_s:
TEXT: H
TEXT: H VIN 3 0 PULSE(-1 1 2NS 2NS 2NS 50NS 100NS)
TEXT: H
TEXT: H
TEXT: H
TEXT: H parameter default value units
TEXT: H -----------------------------------------------------
TEXT: H V1 (initial value) Volts or Amps
TEXT: H V2 (pulsed value) Volts or Amps
TEXT: H TD (delay time) 0.0 seconds
TEXT: H TR (rise time) TSTEP seconds
TEXT: H TF (fall time) TSTEP seconds
TEXT: H PW (pulse width) TSTOP seconds
TEXT: H PER(period) TSTOP seconds
TEXT: H
TEXT: H
TEXT: H
TEXT: H
TEXT: H
TEXT: H A single pulse so specified is described by the follow-
TEXT: H ing table:
TEXT: H
TEXT: H
TEXT: H
TEXT: H time value
TEXT: H -------------------
TEXT: H 0 V1
TEXT: H TD V1
TEXT: H TD+TR V2
TEXT: H TD+TR+PW V2
TEXT: H TD+TR+PW+TF V1
TEXT: H TSTOP V1
TEXT: H
TEXT: H
TEXT: H
TEXT: H
TEXT: H Intermediate points are determined by linear interpola-
TEXT: H tion.
TEXT: H
TEXT: H
SUBJECT: Sinusoidal
TITLE: Sinusoidal
TEXT: H
TEXT: H _3._2._1._2. _S_i_n_u_s_o_i_d_a_l
TEXT: H
TEXT: H _G_e_n_e_r_a_l _f_o_r_m:
TEXT: H
TEXT: H SIN(VO VA FREQ TD THETA)
TEXT: H
TEXT: H
TEXT: H _E_x_a_m_p_l_e_s:
TEXT: H
TEXT: H VIN 3 0 SIN(0 1 100MEG 1NS 1E10)
TEXT: H
TEXT: H
TEXT: H
TEXT: H
TEXT: H
TEXT: H
TEXT: H parameters default value units
TEXT: H -------------------------------------------------------
TEXT: H VO (offset) Volts or Amps
TEXT: H VA (amplitude) Volts or Amps
TEXT: H FREQ (frequency) 1/TSTOP Hz
TEXT: H TD (delay) 0.0 seconds
TEXT: H THETA (damping factor) 0.0 1/seconds
TEXT: H
TEXT: H
TEXT: H
TEXT: H
TEXT: H
TEXT: H The shape of the waveform is described by the following
TEXT: H table:
TEXT: H
TEXT: H
TEXT: H time value
TEXT: H ------------------------------------------------------------
TEXT: H 0 to TD VO
TEXT: H -(t - TD)THETA
TEXT: H TD to TSTOP VO + VA e sin(2 J FREQ (t + TD))
TEXT: H
TEXT: H
TEXT: H
TEXT: H
TEXT: H
SUBJECT: Exponential
TITLE: Exponential
TEXT: H
TEXT: H _3._2._1._3. _E_x_p_o_n_e_n_t_i_a_l
TEXT: H
TEXT: H _G_e_n_e_r_a_l _F_o_r_m:
TEXT: H
TEXT: H EXP(V1 V2 TD1 TAU1 TD2 TAU2)
TEXT: H
TEXT: H
TEXT: H _E_x_a_m_p_l_e_s:
TEXT: H
TEXT: H VIN 3 0 EXP(-4 -1 2NS 30NS 60NS 40NS)
TEXT: H
TEXT: H
TEXT: H
TEXT: H
TEXT: H
TEXT: H parameter default value units
TEXT: H ---------------------------------------------------------
TEXT: H V1 (initial value) Volts or Amps
TEXT: H V2 (pulsed value) Volts or Amps
TEXT: H TD1 (rise delay time) 0.0 seconds
TEXT: H TAU1 (rise time constant) TSTEP seconds
TEXT: H TD2 (fall delay time) TD1+TSTEP seconds
TEXT: H TAU2 (fall time constant) TSTEP seconds
TEXT: H
TEXT: H
TEXT: H
TEXT: H
TEXT: H
TEXT: H The shape of the waveform is described by the following
TEXT: H table:
TEXT: H
TEXT: H
TEXT: H
TEXT: H time value
TEXT: H ----------------------------------------------------------------------------
TEXT: H 0 to TD1 V1
TEXT: H | ------------|
TEXT: H TAU1
TEXT: H | -(t - TD1) | -(t - TD2)
TEXT: H TD1 to TD2 V1 + (V2 - V1) 1 - e
TEXT: H | ----------| | ----------|
TEXT: H | TAU1 | | TAU2 |
TEXT: H TD2 to TSTOP V1 + (V2 - V1) - e + (V1 - V2) 1 - e
TEXT: H
TEXT: H
TEXT: H
TEXT: H
TEXT: H
SUBJECT: PieceWise Linear
TITLE: Piece-Wise Linear
TEXT: H
TEXT: H _3._2._1._4. _P_i_e_c_e-_W_i_s_e _L_i_n_e_a_r
TEXT: H
TEXT: H _G_e_n_e_r_a_l _F_o_r_m:
TEXT: H
TEXT: H PWL(T1 V1 <T2 V2 T3 V3 T4 V4 ...>)
TEXT: H
TEXT: H
TEXT: H _E_x_a_m_p_l_e_s:
TEXT: H
TEXT: H VCLOCK 7 5 PWL(0 -7 10NS -7 11NS -3 17NS -3 18NS -7 50NS -7)
TEXT: H
TEXT: H
TEXT: H
TEXT: H
TEXT: H Each pair of values (Ti, Vi) specifies that the value
TEXT: H of the source is Vi (in Volts or Amps) at time=Ti. The
TEXT: H value of the source at intermediate values of time is deter-
TEXT: H mined by using linear interpolation on the input values.
TEXT: H
TEXT: H
SUBJECT: SingleFrequency FM
TITLE: Single-Frequency FM
TEXT: H
TEXT: H _3._2._1._5. _S_i_n_g_l_e-_F_r_e_q_u_e_n_c_y _F_M
TEXT: H
TEXT: H _G_e_n_e_r_a_l _F_o_r_m:
TEXT: H
TEXT: H SFFM(VO VA FC MDI FS)
TEXT: H
TEXT: H
TEXT: H _E_x_a_m_p_l_e_s:
TEXT: H
TEXT: H V1 12 0 SFFM(0 1M 20K 5 1K)
TEXT: H
TEXT: H
TEXT: H
TEXT: H
TEXT: H
TEXT: H
TEXT: H parameter default value units
TEXT: H -------------------------------------------------------
TEXT: H VO (offset) Volts or Amps
TEXT: H VA (amplitude) Volts or Amps
TEXT: H FC (carrier frequency) 1/TSTOP Hz
TEXT: H MDI (modulation index)
TEXT: H FS (signal frequency) 1/TSTOP Hz
TEXT: H
TEXT: H
TEXT: H
TEXT: H
TEXT: H The shape of the waveform is described by the following
TEXT: H equation:
TEXT: H
TEXT: H
TEXT: H | |
TEXT: H V(t)=V + V sin 2 J FC t + MDI sin(2 J FS t)
TEXT: H O A | |
TEXT: H
TEXT: H
TEXT: H
TEXT: H
TEXT: H
SUBJECT: Linear Dependent Sources
TITLE: Linear Dependent Sources
TEXT: H
TEXT: H _3._2._2. _L_i_n_e_a_r _D_e_p_e_n_d_e_n_t _S_o_u_r_c_e_s
TEXT: H
TEXT: H
TEXT: H SPICE allows circuits to contain linear dependent
TEXT: H sources characterized by any of the four equations
TEXT: H
TEXT: H i = g v v = e v i = f i v
TEXT: H = h i
TEXT: H
TEXT: H where g, e, f, and h are constants representing transconduc-
TEXT: H tance, voltage gain, current gain, and transresistance,
TEXT: H respectively.
TEXT: H
TEXT: H
TEXT: H
SUBTOPIC: NGSPICE:Linear VoltageControlled Current Sources
SUBTOPIC: NGSPICE:Linear VoltageControlled Voltage Sources
SUBTOPIC: NGSPICE:Linear CurrentControlled Current Sources
SUBTOPIC: NGSPICE:Linear CurrentControlled Voltage Sources
SUBJECT: Linear VoltageControlled Current Sources
TITLE: Linear Voltage-Controlled Current Sources
TEXT: H
TEXT: H _3._2._2._1. _L_i_n_e_a_r _V_o_l_t_a_g_e-_C_o_n_t_r_o_l_l_e_d _C_u_r_r_e_n_t _S_o_u_r_c_e_s
TEXT: H
TEXT: H _G_e_n_e_r_a_l _f_o_r_m:
TEXT: H
TEXT: H GXXXXXXX N+ N- NC+ NC- VALUE
TEXT: H
TEXT: H
TEXT: H _E_x_a_m_p_l_e_s:
TEXT: H
TEXT: H G1 2 0 5 0 0.1MMHO
TEXT: H
TEXT: H
TEXT: H N+ and N- are the positive and negative nodes,
TEXT: H respectively. Current flow is from the positive node,
TEXT: H through the source, to the negative node. NC+ and NC-
TEXT: H are the positive and negative controlling nodes, respec-
TEXT: H tively. VALUE is the transconductance (in mhos).
TEXT: H
TEXT: H
TEXT: H
SUBJECT: Linear VoltageControlled Voltage Sources
TITLE: Linear Voltage-Controlled Voltage Sources
TEXT: H
TEXT: H _3._2._2._2. _L_i_n_e_a_r _V_o_l_t_a_g_e-_C_o_n_t_r_o_l_l_e_d _V_o_l_t_a_g_e _S_o_u_r_c_e_s
TEXT: H
TEXT: H _G_e_n_e_r_a_l _f_o_r_m:
TEXT: H
TEXT: H EXXXXXXX N+ N- NC+ NC- VALUE
TEXT: H
TEXT: H
TEXT: H _E_x_a_m_p_l_e_s:
TEXT: H
TEXT: H E1 2 3 14 1 2.0
TEXT: H
TEXT: H
TEXT: H N+ is the positive node, and N- is the negative
TEXT: H node. NC+ and NC- are the positive and negative con-
TEXT: H trolling nodes, respectively. VALUE is the voltage
TEXT: H gain.
TEXT: H
TEXT: H
TEXT: H
SUBJECT: Linear CurrentControlled Current Sources
TITLE: Linear Current-Controlled Current Sources
TEXT: H
TEXT: H _3._2._2._3. _L_i_n_e_a_r _C_u_r_r_e_n_t-_C_o_n_t_r_o_l_l_e_d _C_u_r_r_e_n_t _S_o_u_r_c_e_s
TEXT: H
TEXT: H _G_e_n_e_r_a_l _f_o_r_m:
TEXT: H
TEXT: H FXXXXXXX N+ N- VNAM VALUE
TEXT: H
TEXT: H
TEXT: H _E_x_a_m_p_l_e_s:
TEXT: H
TEXT: H F1 13 5 VSENS 5
TEXT: H
TEXT: H
TEXT: H N+ and N- are the positive and negative nodes,
TEXT: H respectively. Current flow is from the positive node,
TEXT: H through the source, to the negative node. VNAM is the
TEXT: H name of a voltage source through which the controlling
TEXT: H current flows. The direction of positive controlling
TEXT: H current flow is from the positive node, through the
TEXT: H source, to the negative node of VNAM. VALUE is the
TEXT: H current gain.
TEXT: H
TEXT: H
TEXT: H
SUBJECT: Linear CurrentControlled Voltage Sources
TITLE: Linear Current-Controlled Voltage Sources
TEXT: H
TEXT: H _3._2._2._4. _L_i_n_e_a_r _C_u_r_r_e_n_t-_C_o_n_t_r_o_l_l_e_d _V_o_l_t_a_g_e _S_o_u_r_c_e_s
TEXT: H
TEXT: H _G_e_n_e_r_a_l _f_o_r_m:
TEXT: H
TEXT: H HXXXXXXX N+ N- VNAM VALUE
TEXT: H
TEXT: H
TEXT: H _E_x_a_m_p_l_e_s:
TEXT: H
TEXT: H HX 5 17 VZ 0.5K
TEXT: H
TEXT: H
TEXT: H N+ and N- are the positive and negative nodes,
TEXT: H respectively. VNAM is the name of a voltage source
TEXT: H through which the controlling current flows. The direc-
TEXT: H tion of positive controlling current flow is from the
TEXT: H positive node, through the source, to the negative node
TEXT: H of VNAM. VALUE is the transresistance (in ohms).
TEXT: H
TEXT: H
TEXT: H
SUBJECT: Nonlinear Dependent Sources
TITLE: Non-linear Dependent Sources
TEXT: H
TEXT: H _3._2._3. _N_o_n-_l_i_n_e_a_r _D_e_p_e_n_d_e_n_t _S_o_u_r_c_e_s
TEXT: H
TEXT: H _G_e_n_e_r_a_l _f_o_r_m:
TEXT: H
TEXT: H BXXXXXXX N+ N- <I=EXPR> <V=EXPR>
TEXT: H
TEXT: H
TEXT: H _E_x_a_m_p_l_e_s:
TEXT: H
TEXT: H B1 0 1 I=cos(v(1))+sin(v(2))
TEXT: H B1 0 1 V=ln(cos(log(v(1,2)^2)))-v(3)^4+v(2)^v(1)
TEXT: H B1 3 4 I=17
TEXT: H B1 3 4 V=exp(pi^i(vdd))
TEXT: H
TEXT: H
TEXT: H
TEXT: H _N+ is the positive node, and _N- is the negative node.
TEXT: H The values of the V and I parameters determine the voltages
TEXT: H and currents across and through the device, respectively.
TEXT: H If I is given then the device is a current source, and if V
TEXT: H is given the device is a voltage source. One and only one
TEXT: H of these parameters must be given.
TEXT: H
TEXT: H The small-signal AC behavior of the nonlinear source is
TEXT: H a linear dependent source (or sources) with a proportional-
TEXT: H ity constant equal to the derivative (or derivatives) of the
TEXT: H source at the DC operating point.
TEXT: H
TEXT: H
TEXT: H The expressions given for V and I may be any function
TEXT: H of voltages and currents through voltage sources in the sys-
TEXT: H tem. The following functions of real variables are defined:
TEXT: H
TEXT: H abs asinh cosh sin
TEXT: H acos atan exp sinh
TEXT: H acosh atanh ln sqrt
TEXT: H asin cos log tan
TEXT: H
TEXT: H
TEXT: H
TEXT: H The function "u" is the unit step function, with a
TEXT: H value of one for arguments greater than one and a value of
TEXT: H zero for arguments less than zero. The function "uramp" is
TEXT: H the integral of the unit step: for an input _x, the value is
TEXT: H zero if _x is less than zero, or if _x is greater than zero
TEXT: H the value is _x. These two functions are useful in sythesiz-
TEXT: H ing piece-wise non-linear functions, though convergence may
TEXT: H be adversely affected.
TEXT: H
TEXT: H
TEXT: H The following standard operators are defined:
TEXT: H
TEXT: H + - * / ^ unary -
TEXT: H
TEXT: H
TEXT: H If the argument of log, ln, or sqrt becomes less than
TEXT: H zero, the absolute value of the argument is used. If a
TEXT: H divisor becomes zero or the argument of log or ln becomes
TEXT: H zero, an error will result. Other problems may occur when
TEXT: H the argument for a function in a partial derivative enters a
TEXT: H region where that function is undefined.
TEXT: H
TEXT: H
TEXT: H To get time into the expression you can integrate the
TEXT: H current from a constant current source with a capacitor and
TEXT: H use the resulting voltage (don't forget to set the initial
TEXT: H voltage across the capacitor). Non-linear resistors, capa-
TEXT: H citors, and inductors may be synthesized with the nonlinear
TEXT: H dependent source. Non-linear resistors are obvious. Non-
TEXT: H linear capacitors and inductors are implemented with their
TEXT: H linear counterparts by a change of variables implemented
TEXT: H with the nonlinear dependent source. The following subcir-
TEXT: H cuit will implement a nonlinear capacitor:
TEXT: H
TEXT: H .Subckt nlcap pos neg
TEXT: H * Bx: calculate f(input voltage)
TEXT: H Bx 1 0 v = f(v(pos,neg))
TEXT: H * Cx: linear capacitance
TEXT: H Cx 2 0 1
TEXT: H * Vx: Ammeter to measure current into the capacitor
TEXT: H Vx 2 1 DC 0Volts
TEXT: H * Drive the current through Cx back into the circuit
TEXT: H Fx pos neg Vx 1
TEXT: H .ends
TEXT: H
TEXT: H
TEXT: H Non-linear inductors are similar.
TEXT: H
TEXT: H
SUBJECT: TRANSMISSION LINES
TITLE: TRANSMISSION LINES
TEXT: H
TEXT: H _3._3. _T_R_A_N_S_M_I_S_S_I_O_N _L_I_N_E_S
TEXT: H
SUBTOPIC: NGSPICE:Lossless Transmission Lines
SUBTOPIC: NGSPICE:Lossy Transmission Lines
SUBTOPIC: NGSPICE:Lossy Transmission Line Model
SUBTOPIC: NGSPICE:Uniform Distributed RC Lines
SUBTOPIC: NGSPICE:Uniform Distributed RC Model
SUBJECT: Lossless Transmission Lines
TITLE: Lossless Transmission Lines
TEXT: H
TEXT: H _3._3._1. _L_o_s_s_l_e_s_s _T_r_a_n_s_m_i_s_s_i_o_n _L_i_n_e_s
TEXT: H
TEXT: H _G_e_n_e_r_a_l _f_o_r_m:
TEXT: H
TEXT: H TXXXXXXX N1 N2 N3 N4 Z0=VALUE <TD=VALUE> <F=FREQ <NL=NRMLEN>>
TEXT: H + <IC=V1, I1, V2, I2>
TEXT: H
TEXT: H
TEXT: H _E_x_a_m_p_l_e_s:
TEXT: H
TEXT: H T1 1 0 2 0 Z0=50 TD=10NS
TEXT: H
TEXT: H
TEXT: H N1 and N2 are the nodes at port 1; N3 and N4 are the
TEXT: H nodes at port 2. Z0 is the characteristic impedance. The
TEXT: H length of the line may be expressed in either of two forms.
TEXT: H The transmission delay, TD, may be specified directly (as
TEXT: H TD=10ns, for example). Alternatively, a frequency F may be
TEXT: H given, together with NL, the normalized electrical length of
TEXT: H the transmission line with respect to the wavelength in the
TEXT: H line at the frequency F. If a frequency is specified but NL
TEXT: H is omitted, 0.25 is assumed (that is, the frequency is
TEXT: H assumed to be the quarter-wave frequency). Note that
TEXT: H although both forms for expressing the line length are indi-
TEXT: H cated as optional, one of the two must be specified.
TEXT: H
TEXT: H Note that this element models only one propagating
TEXT: H mode. If all four nodes are distinct in the actual circuit,
TEXT: H then two modes may be excited. To simulate such a situa-
TEXT: H tion, two transmission-line elements are required. (see the
TEXT: H example in Appendix A for further clarification.)
TEXT: H
TEXT: H The (optional) initial condition specification consists
TEXT: H of the voltage and current at each of the transmission line
TEXT: H ports. Note that the initial conditions (if any) apply
TEXT: H 'only' if the UIC option is specified on the .TRAN control
TEXT: H line.
TEXT: H
TEXT: H Note that a lossy transmission line (see below) with
TEXT: H zero loss may be more accurate than than the lossless
TEXT: H transmission line due to implementation details.
TEXT: H
TEXT: H
SUBJECT: Lossy Transmission Lines
TITLE: Lossy Transmission Lines
TEXT: H
TEXT: H _3._3._2. _L_o_s_s_y _T_r_a_n_s_m_i_s_s_i_o_n _L_i_n_e_s
TEXT: H
TEXT: H _G_e_n_e_r_a_l _f_o_r_m:
TEXT: H
TEXT: H OXXXXXXX N1 N2 N3 N4 MNAME
TEXT: H
TEXT: H
TEXT: H _E_x_a_m_p_l_e_s:
TEXT: H
TEXT: H O23 1 0 2 0 LOSSYMOD
TEXT: H OCONNECT 10 5 20 5 INTERCONNECT
TEXT: H
TEXT: H
TEXT: H
TEXT: H This is a two-port convolution model for single-
TEXT: H conductor lossy transmission lines. N1 and N2 are the nodes
TEXT: H at port 1; N3 and N4 are the nodes at port 2. Note that a
TEXT: H lossy transmission line with zero loss may be more accurate
TEXT: H than than the lossless transmission line due to implementa-
TEXT: H tion details.
TEXT: H
SUBJECT: Lossy Transmission Line Model
TITLE: Lossy Transmission Line Model (LTRA)
TEXT: H
TEXT: H _3._3._3. _L_o_s_s_y _T_r_a_n_s_m_i_s_s_i_o_n _L_i_n_e _M_o_d_e_l (_L_T_R_A)
TEXT: H
TEXT: H
TEXT: H The uniform RLC/RC/LC/RG transmission line model (re-
TEXT: H ferred to as the LTRA model henceforth) models a uniform
TEXT: H constant-parameter distributed transmission line. The RC
TEXT: H and LC cases may also be modeled using the URC and TRA
TEXT: H models; however, the newer LTRA model is usually faster and
TEXT: H more accurate than the others. The operation of the LTRA
TEXT: H model is based on the convolution of the transmission line's
TEXT: H impulse responses with its inputs (see [8]).
TEXT: H
TEXT: H The LTRA model takes a number of parameters, some of
TEXT: H which must be given and some of which are optional.
TEXT: H
TEXT: H name parameter units/type default example
TEXT: H
TEXT: H R resistance/length Z/unit 0.0 0.2
TEXT: H L inductance/length henrys/unit 0.0 9.13e-9
TEXT: H G conductance/length mhos/unit 0.0 0.0
TEXT: H C capacitance/length farads/unit 0.0 3.65e-12
TEXT: H LEN length of line no default 1.0
TEXT: H REL breakpoint control arbitrary unit 1 0.5
TEXT: H ABS breakpoint control 1 5
TEXT: H NOSTEPLIMIT don't limit timestep to less than flag not set set
TEXT: H line delay
TEXT: H NOCONTROL don't do complex timestep control flag not set set
TEXT: H LININTERP use linear interpolation flag not set set
TEXT: H MIXEDINTERP use linear when quadratic seems bad not set set
TEXT: H COMPACTREL special reltol for history compaction flag RELTOL 1.0e-3
TEXT: H COMPACTABS special abstol for history compaction ABSTOL 1.0e-9
TEXT: H TRUNCNR use Newton-Raphson method for flag not set set
TEXT: H timestep control
TEXT: H TRUNCDONTCUT don't limit timestep to keep flag not set set
TEXT: H impulse-response errors low
TEXT: H
TEXT: H
TEXT: H
TEXT: H The following types of lines have been implemented so
TEXT: H far: RLC (uniform transmission line with series loss only),
TEXT: H RC (uniform RC line), LC (lossless transmission line), and
TEXT: H RG (distributed series resistance and parallel conductance
TEXT: H only). Any other combination will yield erroneous results
TEXT: H and should not be tried. The length LEN of the line must be
TEXT: H specified.
TEXT: H
TEXT: H NOSTEPLIMIT is a flag that will remove the default res-
TEXT: H triction of limiting time-steps to less than the line delay
TEXT: H in the RLC case. NOCONTROL is a flag that prevents the
TEXT: H default limiting of the time-step based on convolution error
TEXT: H criteria in the RLC and RC cases. This speeds up simulation
TEXT: H but may in some cases reduce the accuracy of results.
TEXT: H LININTERP is a flag that, when specified, will use linear
TEXT: H interpolation instead of the default quadratic interpolation
TEXT: H for calculating delayed signals. MIXEDINTERP is a flag
TEXT: H that, when specified, uses a metric for judging whether qua-
TEXT: H dratic interpolation is not applicable and if so uses linear
TEXT: H interpolation; otherwise it uses the default quadratic
TEXT: H interpolation. TRUNCDONTCUT is a flag that removes the
TEXT: H default cutting of the time-step to limit errors in the
TEXT: H actual calculation of impulse-response related quantities.
TEXT: H COMPACTREL and COMPACTABS are quantities that control the
TEXT: H compaction of the past history of values stored for convolu-
TEXT: H tion. Larger values of these lower accuracy but usually
TEXT: H increase simulation speed. These are to be used with the
TEXT: H TRYTOCOMPACT option, described in the .OPTIONS section.
TEXT: H TRUNCNR is a flag that turns on the use of Newton-Raphson
TEXT: H iterations to determine an appropriate timestep in the
TEXT: H timestep control routines. The default is a trial and error
TEXT: H procedure by cutting the previous timestep in half. REL and
TEXT: H ABS are quantities that control the setting of breakpoints.
TEXT: H
TEXT: H The option most worth experimenting with for increasing
TEXT: H the speed of simulation is REL. The default value of 1 is
TEXT: H usually safe from the point of view of accuracy but occa-
TEXT: H sionally increases computation time. A value greater than 2
TEXT: H eliminates all breakpoints and may be worth trying depending
TEXT: H on the nature of the rest of the circuit, keeping in mind
TEXT: H that it might not be safe from the viewpoint of accuracy.
TEXT: H Breakpoints may usually be entirely eliminated if it is
TEXT: H expected the circuit will not display sharp discontinuities.
TEXT: H Values between 0 and 1 are usually not required but may be
TEXT: H used for setting many breakpoints.
TEXT: H
TEXT: H COMPACTREL may also be experimented with when the
TEXT: H option TRYTOCOMPACT is specified in a .OPTIONS card. The
TEXT: H legal range is between 0 and 1. Larger values usually
TEXT: H decrease the accuracy of the simulation but in some cases
TEXT: H improve speed. If TRYTOCOMPACT is not specified on a
TEXT: H .OPTIONS card, history compaction is not attempted and accu-
TEXT: H racy is high. NOCONTROL, TRUNCDONTCUT and NOSTEPLIMIT also
TEXT: H tend to increase speed at the expense of accuracy.
TEXT: H
SUBJECT: Uniform Distributed RC Lines
TITLE: Uniform Distributed RC Lines (Lossy)
TEXT: H
TEXT: H _3._3._4. _U_n_i_f_o_r_m _D_i_s_t_r_i_b_u_t_e_d _R_C _L_i_n_e_s (_L_o_s_s_y)
TEXT: H
TEXT: H _G_e_n_e_r_a_l _f_o_r_m:
TEXT: H
TEXT: H UXXXXXXX N1 N2 N3 MNAME L=LEN <N=LUMPS>
TEXT: H
TEXT: H
TEXT: H _E_x_a_m_p_l_e_s:
TEXT: H
TEXT: H U1 1 2 0 URCMOD L=50U
TEXT: H URC2 1 12 2 UMODL l=1MIL N=6
TEXT: H
TEXT: H
TEXT: H
TEXT: H N1 and N2 are the two element nodes the RC line con-
TEXT: H nects, while N3 is the node to which the capacitances are
TEXT: H connected. MNAME is the model name, LEN is the length of
TEXT: H the RC line in meters. LUMPS, if specified, is the number
TEXT: H of lumped segments to use in modeling the RC line (see the
TEXT: H model description for the action taken if this parameter is
TEXT: H omitted).
TEXT: H
SUBJECT: Uniform Distributed RC Model
TITLE: Uniform Distributed RC Model (URC)
TEXT: H
TEXT: H _3._3._5. _U_n_i_f_o_r_m _D_i_s_t_r_i_b_u_t_e_d _R_C _M_o_d_e_l (_U_R_C)
TEXT: H
TEXT: H
TEXT: H The URC model is derived from a model proposed by L.
TEXT: H Gertzberrg in 1974. The model is accomplished by a subcir-
TEXT: H cuit type expansion of the URC line into a network of lumped
TEXT: H RC segments with internally generated nodes. The RC seg-
TEXT: H ments are in a geometric progression, increasing toward the
TEXT: H middle of the URC line, with K as a proportionality con-
TEXT: H stant. The number of lumped segments used, if not specified
TEXT: H for the URC line device, is determined by the following for-
TEXT: H mula:
TEXT: H 2
TEXT: H | R C |(K-1)| |
TEXT: H _ _ 2
TEXT: H log|F 2 J L |-----| |
TEXT: H max
TEXT: H | L L | K | |
TEXT: H
TEXT: H N = ------------------------------
TEXT: H log K
TEXT: H
TEXT: H
TEXT: H
TEXT: H
TEXT: H The URC line is made up strictly of resistor and capa-
TEXT: H citor segments unless the ISPERL parameter is given a non-
TEXT: H zero value, in which case the capacitors are replaced with
TEXT: H reverse biased diodes with a zero-bias junction capacitance
TEXT: H equivalent to the capacitance replaced, and with a satura-
TEXT: H tion current of ISPERL amps per meter of transmission line
TEXT: H and an optional series resistance equivalent to RSPERL ohms
TEXT: H per meter.
TEXT: H
TEXT: H name parameter units default example area
TEXT: H
TEXT: H 1 K Propagation Constant - 2.0 1.2 -
TEXT: H 2 FMAX Maximum Frequency of interest Hz 1.0G 6.5Meg -
TEXT: H 3 RPERL Resistance per unit length Z/m 1000 10 -
TEXT: H 4 CPERL Capacitance per unit length F/m 1.0e-15 1pF -
TEXT: H 5 ISPERL Saturation Current per unit length A/m 0 - -
TEXT: H 6 RSPERL Diode Resistance per unit length Z/m 0 - -
TEXT: H
TEXT: H
TEXT: H
SUBJECT: TRANSISTORS AND DIODES
TITLE: TRANSISTORS AND DIODES
TEXT: H
TEXT: H _3._4. _T_R_A_N_S_I_S_T_O_R_S _A_N_D _D_I_O_D_E_S
TEXT: H
TEXT: H
TEXT: H The area factor used on the diode, BJT, JFET, and MES-
TEXT: H FET devices determines the number of equivalent parallel
TEXT: H devices of a specified model. The affected parameters are
TEXT: H marked with an asterisk under the heading 'area' in the
TEXT: H model descriptions below. Several geometric factors associ-
TEXT: H ated with the channel and the drain and source diffusions
TEXT: H can be specified on the MOSFET device line.
TEXT: H
TEXT: H Two different forms of initial conditions may be speci-
TEXT: H fied for some devices. The first form is included to
TEXT: H improve the dc convergence for circuits that contain more
TEXT: H than one stable state. If a device is specified OFF, the dc
TEXT: H operating point is determined with the terminal voltages for
TEXT: H that device set to zero. After convergence is obtained, the
TEXT: H program continues to iterate to obtain the exact value for
TEXT: H the terminal voltages. If a circuit has more than one dc
TEXT: H stable state, the OFF option can be used to force the solu-
TEXT: H tion to correspond to a desired state. If a device is
TEXT: H specified OFF when in reality the device is conducting, the
TEXT: H program still obtains the correct solution (assuming the
TEXT: H solutions converge) but more iterations are required since
TEXT: H the program must independently converge to two separate
TEXT: H solutions. The .NODESET control line serves a similar pur-
TEXT: H pose as the OFF option. The .NODESET option is easier to
TEXT: H apply and is the preferred means to aid convergence.
TEXT: H
TEXT: H The second form of initial conditions are specified for
TEXT: H use with the transient analysis. These are true 'initial
TEXT: H conditions' as opposed to the convergence aids above. See
TEXT: H the description of the .IC control line and the .TRAN con-
TEXT: H trol line for a detailed explanation of initial conditions.
TEXT: H
TEXT: H
TEXT: H
SUBTOPIC: NGSPICE:Junction Diodes
SUBTOPIC: NGSPICE:Diode Model
SUBTOPIC: NGSPICE:Bipolar Junction Transistors
SUBTOPIC: NGSPICE:BJT Models
SUBTOPIC: NGSPICE:Junction FieldEffect Transistors
SUBTOPIC: NGSPICE:JFET Models
SUBTOPIC: NGSPICE:MOSFETs
SUBTOPIC: NGSPICE:MOSFET Models
SUBTOPIC: NGSPICE:MESFETs
SUBTOPIC: NGSPICE:MESFET Models
SUBJECT: Junction Diodes
TITLE: Junction Diodes
TEXT: H
TEXT: H _3._4._1. _J_u_n_c_t_i_o_n _D_i_o_d_e_s
TEXT: H
TEXT: H _G_e_n_e_r_a_l _f_o_r_m:
TEXT: H
TEXT: H DXXXXXXX N+ N- MNAME <AREA> <OFF> <IC=VD> <TEMP=T>
TEXT: H
TEXT: H
TEXT: H _E_x_a_m_p_l_e_s:
TEXT: H
TEXT: H DBRIDGE 2 10 DIODE1
TEXT: H DCLMP 3 7 DMOD 3.0 IC=0.2
TEXT: H
TEXT: H
TEXT: H
TEXT: H N+ and N- are the positive and negative nodes, respec-
TEXT: H tively. MNAME is the model name, AREA is the area factor,
TEXT: H and OFF indicates an (optional) starting condition on the
TEXT: H device for dc analysis. If the area factor is omitted, a
TEXT: H value of 1.0 is assumed. The (optional) initial condition
TEXT: H specification using IC=VD is intended for use with the UIC
TEXT: H option on the .TRAN control line, when a transient analysis
TEXT: H is desired starting from other than the quiescent operating
TEXT: H point. The (optional) TEMP value is the temperature at
TEXT: H which this device is to operate, and overrides the tempera-
TEXT: H ture specification on the .OPTION control line.
TEXT: H
TEXT: H
SUBJECT: Diode Model
TITLE: Diode Model (D)
TEXT: H
TEXT: H _3._4._2. _D_i_o_d_e _M_o_d_e_l (_D)
TEXT: H
TEXT: H
TEXT: H The dc characteristics of the diode are determined by
TEXT: H the parameters IS and N. An ohmic resistance, RS, is in-
TEXT: H cluded. Charge storage effects are modeled by a transit
TEXT: H time, TT, and a nonlinear depletion layer capacitance which
TEXT: H is determined by the parameters CJO, VJ, and M. The tem-
TEXT: H perature dependence of the saturation current is defined by
TEXT: H the parameters EG, the energy and XTI, the saturation
TEXT: H current temperature exponent. The nominal temperature at
TEXT: H which these parameters were measured is TNOM, which defaults
TEXT: H to the circuit-wide value specified on the .OPTIONS control
TEXT: H line. Reverse breakdown is modeled by an exponential in-
TEXT: H crease in the reverse diode current and is determined by the
TEXT: H parameters BV and IBV (both of which are positive numbers).
TEXT: H
TEXT: H
TEXT: H
TEXT: H name parameter units default example area
TEXT: H
TEXT: H 1 IS saturation current A 1.0e-14 1.0e-14 *
TEXT: H 2 RS ohmic resistance Z 0 10 *
TEXT: H 3 N emission coefficient - 1 1.0
TEXT: H 4 TT transit-time sec 0 0.1ns
TEXT: H 5 CJO zero-bias junction capacitance F 0 2pF *
TEXT: H 6 VJ junction potential V 1 0.6
TEXT: H 7 M grading coefficient - 0.5 0.5
TEXT: H 8 EG activation energy eV 1.11 1.11 Si
TEXT: H 0.69 Sbd
TEXT: H 0.67 Ge
TEXT: H 9 XTI saturation-current temp. exp - 3.0 3.0 jn
TEXT: H 2.0 Sbd
TEXT: H 10 KF flicker noise coefficient - 0
TEXT: H 11 AF flicker noise exponent - 1
TEXT: H 12 FC coefficient for forward-bias - 0.5
TEXT: H depletion capacitance formula
TEXT: H 13 BV reverse breakdown voltage V infinite 40.0
TEXT: H 14 IBV current at breakdown voltage A 1.0e-3
TEXT: H o
TEXT: H 15 TNOM parameter measurement temperature C 27 50
TEXT: H
TEXT: H
TEXT: H
TEXT: H
SUBJECT: Bipolar Junction Transistors
TITLE: Bipolar Junction Transistors (BJTs)
TEXT: H
TEXT: H _3._4._3. _B_i_p_o_l_a_r _J_u_n_c_t_i_o_n _T_r_a_n_s_i_s_t_o_r_s (_B_J_T_s)
TEXT: H
TEXT: H _G_e_n_e_r_a_l _f_o_r_m:
TEXT: H
TEXT: H QXXXXXXX NC NB NE <NS> MNAME <AREA> <OFF> <IC=VBE, VCE> <TEMP=T>
TEXT: H
TEXT: H
TEXT: H _E_x_a_m_p_l_e_s:
TEXT: H
TEXT: H Q23 10 24 13 QMOD IC=0.6, 5.0
TEXT: H Q50A 11 26 4 20 MOD1
TEXT: H
TEXT: H
TEXT: H
TEXT: H NC, NB, and NE are the collector, base, and emitter
TEXT: H nodes, respectively. NS is the (optional) substrate node.
TEXT: H If unspecified, ground is used. MNAME is the model name,
TEXT: H AREA is the area factor, and OFF indicates an (optional)
TEXT: H initial condition on the device for the dc analysis. If the
TEXT: H area factor is omitted, a value of 1.0 is assumed. The
TEXT: H (optional) initial condition specification using IC=VBE, VCE
TEXT: H is intended for use with the UIC option on the .TRAN control
TEXT: H line, when a transient analysis is desired starting from
TEXT: H other than the quiescent operating point. See the .IC con-
TEXT: H trol line description for a better way to set transient ini-
TEXT: H tial conditions. The (optional) TEMP value is the tempera-
TEXT: H ture at which this device is to operate, and overrides the
TEXT: H temperature specification on the .OPTION control line.
TEXT: H
TEXT: H
SUBJECT: BJT Models
TITLE: BJT Models (NPN/PNP)
TEXT: H
TEXT: H _3._4._4. _B_J_T _M_o_d_e_l_s (_N_P_N/_P_N_P)
TEXT: H
TEXT: H
TEXT: H The bipolar junction transistor model in SPICE is an
TEXT: H adaptation of the integral charge control model of Gummel
TEXT: H and Poon. This modified Gummel-Poon model extends the ori-
TEXT: H ginal model to include several effects at high bias levels.
TEXT: H The model automatically simplifies to the simpler Ebers-Moll
TEXT: H model when certain parameters are not specified. The param-
TEXT: H eter names used in the modified Gummel-Poon model have been
TEXT: H chosen to be more easily understood by the program user, and
TEXT: H to reflect better both physical and circuit design thinking.
TEXT: H
TEXT: H
TEXT: H The dc model is defined by the parameters IS, BF, NF,
TEXT: H ISE, IKF, and NE which determine the forward current gain
TEXT: H characteristics, IS, BR, NR, ISC, IKR, and NC which deter-
TEXT: H mine the reverse current gain characteristics, and VAF and
TEXT: H VAR which determine the output conductance for forward and
TEXT: H reverse regions. Three ohmic resistances RB, RC, and RE are
TEXT: H included, where RB can be high current dependent. Base
TEXT: H charge storage is modeled by forward and reverse transit
TEXT: H times, TF and TR, the forward transit time TF being bias
TEXT: H dependent if desired, and nonlinear depletion layer capaci-
TEXT: H tances which are determined by CJE, VJE, and MJE for the B-E
TEXT: H junction , CJC, VJC, and MJC for the B-C junction and CJS,
TEXT: H VJS, and MJS for the C-S (Collector-Substrate) junction.
TEXT: H The temperature dependence of the saturation current, IS, is
TEXT: H determined by the energy-gap, EG, and the saturation current
TEXT: H temperature exponent, XTI. Additionally base current tem-
TEXT: H perature dependence is modeled by the beta temperature
TEXT: H exponent XTB in the new model. The values specified are
TEXT: H assumed to have been measured at the temperature TNOM, which
TEXT: H can be specified on the .OPTIONS control line or overridden
TEXT: H by a specification on the .MODEL line.
TEXT: H
TEXT: H The BJT parameters used in the modified Gummel-Poon
TEXT: H model are listed below. The parameter names used in earlier
TEXT: H versions of SPICE2 are still accepted.
TEXT: H
TEXT: H Modified Gummel-Poon BJT Parameters.
TEXT: H
TEXT: H
TEXT: H name parameter units default example area
TEXT: H
TEXT: H 1 IS transport saturation current A 1.0e-16 1.0e-15 *
TEXT: H 2 BF ideal maximum forward beta - 100 100
TEXT: H 3 NF forward current emission coefficient - 1.0 1
TEXT: H 4 VAF forward Early voltage V infinite 200
TEXT: H 5 IKF corner for forward beta
TEXT: H high current roll-off A infinite 0.01 *
TEXT: H 6 ISE B-E leakage saturation current A 0 1.0e-13 *
TEXT: H 7 NE B-E leakage emission coefficient - 1.5 2
TEXT: H 8 BR ideal maximum reverse beta - 1 0.1
TEXT: H 9 NR reverse current emission coefficient - 1 1
TEXT: H 10 VAR reverse Early voltage V infinite 200
TEXT: H 11 IKR corner for reverse beta
TEXT: H high current roll-off A infinite 0.01 *
TEXT: H 12 ISC B-C leakage saturation current A 0 1.0e-13 *
TEXT: H 13 NC B-C leakage emission coefficient - 2 1.5
TEXT: H 14 RB zero bias base resistance Z 0 100 *
TEXT: H 15 IRB current where base resistance
TEXT: H falls halfway to its min value A infinite 0.1 *
TEXT: H 16 RBM minimum base resistance
TEXT: H at high currents Z RB 10 *
TEXT: H 17 RE emitter resistance Z 0 1 *
TEXT: H 18 RC collector resistance Z 0 10 *
TEXT: H 19 CJE B-E zero-bias depletion capacitance F 0 2pF *
TEXT: H 20 VJE B-E built-in potential V 0.75 0.6
TEXT: H 21 MJE B-E junction exponential factor - 0.33 0.33
TEXT: H 22 TF ideal forward transit time sec 0 0.1ns
TEXT: H 23 XTF coefficient for bias dependence of TF - 0
TEXT: H 24 VTF voltage describing VBC
TEXT: H dependence of TF V infinite
TEXT: H 25 ITF high-current parameter
TEXT: H for effect on TF A 0 *
TEXT: H 26 PTF excess phase at freq=1.0/(TF*2PI) Hz deg 0
TEXT: H 27 CJC B-C zero-bias depletion capacitance F 0 2pF *
TEXT: H 28 VJC B-C built-in potential V 0.75 0.5
TEXT: H 29 MJC B-C junction exponential factor - 0.33 0.5
TEXT: H 30 XCJC fraction of B-C depletion capacitance - 1
TEXT: H connected to internal base node
TEXT: H 31 TR ideal reverse transit time sec 0 10ns
TEXT: H 32 CJS zero-bias collector-substrate
TEXT: H capacitance F 0 2pF *
TEXT: H 33 VJS substrate junction built-in potential V 0.75
TEXT: H 34 MJS substrate junction exponential factor - 0 0.5
TEXT: H 35 XTB forward and reverse beta
TEXT: H temperature exponent - 0
TEXT: H 36 EG energy gap for temperature
TEXT: H effect on IS eV 1.11
TEXT: H 37 XTI temperature exponent for effect on IS - 3
TEXT: H 38 KF flicker-noise coefficient - 0
TEXT: H 39 AF flicker-noise exponent - 1
TEXT: H 40 FC coefficient for forward-bias
TEXT: H depletion capacitance formula - 0.5
TEXT: H o
TEXT: H 41 TNOM Parameter measurement temperature C 27 50
TEXT: H
TEXT: H
TEXT: H
SUBJECT: Junction FieldEffect Transistors
TITLE: Junction Field-Effect Transistors (JFETs)
TEXT: H
TEXT: H _3._4._5. _J_u_n_c_t_i_o_n _F_i_e_l_d-_E_f_f_e_c_t _T_r_a_n_s_i_s_t_o_r_s (_J_F_E_T_s)
TEXT: H
TEXT: H _G_e_n_e_r_a_l _f_o_r_m:
TEXT: H
TEXT: H JXXXXXXX ND NG NS MNAME <AREA> <OFF> <IC=VDS, VGS> <TEMP=T>
TEXT: H
TEXT: H
TEXT: H _E_x_a_m_p_l_e_s:
TEXT: H
TEXT: H J1 7 2 3 JM1 OFF
TEXT: H
TEXT: H
TEXT: H
TEXT: H ND, NG, and NS are the drain, gate, and source nodes,
TEXT: H respectively. MNAME is the model name, AREA is the area
TEXT: H factor, and OFF indicates an (optional) initial condition on
TEXT: H the device for dc analysis. If the area factor is omitted,
TEXT: H a value of 1.0 is assumed. The (optional) initial condition
TEXT: H specification, using IC=VDS, VGS is intended for use with
TEXT: H the UIC option on the .TRAN control line, when a transient
TEXT: H analysis is desired starting from other than the quiescent
TEXT: H operating point. See the .IC control line for a better way
TEXT: H to set initial conditions. The (optional) TEMP value is the
TEXT: H temperature at which this device is to operate, and over-
TEXT: H rides the temperature specification on the .OPTION control
TEXT: H line.
TEXT: H
TEXT: H
SUBJECT: JFET Models
TITLE: JFET Models (NJF/PJF)
TEXT: H
TEXT: H _3._4._6. _J_F_E_T _M_o_d_e_l_s (_N_J_F/_P_J_F)
TEXT: H
TEXT: H
TEXT: H The JFET model is derived from the FET model of Shich-
TEXT: H man and Hodges. The dc characteristics are defined by the
TEXT: H parameters VTO and BETA, which determine the variation of
TEXT: H drain current with gate voltage, LAMBDA, which determines
TEXT: H the output conductance, and IS, the saturation current of
TEXT: H the two gate junctions. Two ohmic resistances, RD and RS,
TEXT: H are included. Charge storage is modeled by nonlinear deple-
TEXT: H tion layer capacitances for both gate junctions which vary
TEXT: H as the -1/2 power of junction voltage and are defined by the
TEXT: H parameters CGS, CGD, and PB.
TEXT: H
TEXT: H Note that in Spice3f and later, a fitting parameter B
TEXT: H has been added. For details, see [9].
TEXT: H
TEXT: H
TEXT: H name parameter units default example area
TEXT: H
TEXT: H 1 VTO threshold voltage (V V -2.0 -2.0
TEXT: H TO 2
TEXT: H 2 BETA transconductance parameter (B) A/V 1.0e-4 1.0e-3 *
TEXT: H 3 LAMBDA channel-length modulation
TEXT: H parameter (L) 1/V 0 1.0e-4
TEXT: H 4 RD drain ohmic resistance Z 0 100 *
TEXT: H 5 RS source ohmic resistance Z 0 100 *
TEXT: H 6 CGS zero-bias G-S junction capacitance (C ) F 0 5pF *
TEXT: H gs
TEXT: H 7 CGD zero-bias G-D junction capacitance (C ) F 0 1pF *
TEXT: H gs
TEXT: H 8 PB gate junction potential V 1 0.6
TEXT: H 9 IS gate junction saturation current (I ) A 1.0e-14 1.0e-14 *
TEXT: H S
TEXT: H 10 B doping tail parameter - 1 1.1
TEXT: H 11 KF flicker noise coefficient - 0
TEXT: H 12 AF flicker noise exponent - 1
TEXT: H 13 FC coefficient for forward-bias - 0.5
TEXT: H depletion capacitance formula
TEXT: H o
TEXT: H 14 TNOM parameter measurement temperature C 27 50
TEXT: H
TEXT: H
TEXT: H
TEXT: H
SUBJECT: MOSFETs
TITLE: MOSFETs
TEXT: H
TEXT: H _3._4._7. _M_O_S_F_E_T_s
TEXT: H
TEXT: H _G_e_n_e_r_a_l _f_o_r_m:
TEXT: H
TEXT: H MXXXXXXX ND NG NS NB MNAME <L=VAL> <W=VAL> <AD=VAL> <AS=VAL>
TEXT: H + <PD=VAL> <PS=VAL> <NRD=VAL> <NRS=VAL> <OFF>
TEXT: H + <IC=VDS, VGS, VBS> <TEMP=T>
TEXT: H
TEXT: H
TEXT: H _E_x_a_m_p_l_e_s:
TEXT: H
TEXT: H M1 24 2 0 20 TYPE1
TEXT: H M31 2 17 6 10 MODM L=5U W=2U
TEXT: H M1 2 9 3 0 MOD1 L=10U W=5U AD=100P AS=100P PD=40U PS=40U
TEXT: H
TEXT: H
TEXT: H ND, NG, NS, and NB are the drain, gate, source, and bulk
TEXT: H (substrate) nodes, respectively. MNAME is the model name.
TEXT: H L and W are the channel length and width, in meters. AD and
TEXT: H AS are the areas of the drain and source diffusions, in
TEXT: H 2
TEXT: H meters . Note that the suffix U specifies microns (1e-6 m)
TEXT: H 2
TEXT: H and P sq-microns (1e-12 m ). If any of L, W, AD, or AS are
TEXT: H not specified, default values are used. The use of defaults
TEXT: H simplifies input file preparation, as well as the editing
TEXT: H required if device geometries are to be changed. PD and PS
TEXT: H are the perimeters of the drain and source junctions, in
TEXT: H meters. NRD and NRS designate the equivalent number of
TEXT: H squares of the drain and source diffusions; these values
TEXT: H multiply the sheet resistance RSH specified on the .MODEL
TEXT: H control line for an accurate representation of the parasitic
TEXT: H series drain and source resistance of each transistor. PD
TEXT: H and PS default to 0.0 while NRD and NRS to 1.0. OFF indi-
TEXT: H cates an (optional) initial condition on the device for dc
TEXT: H analysis. The (optional) initial condition specification
TEXT: H using IC=VDS, VGS, VBS is intended for use with the UIC
TEXT: H option on the .TRAN control line, when a transient analysis
TEXT: H is desired starting from other than the quiescent operating
TEXT: H point. See the .IC control line for a better and more con-
TEXT: H venient way to specify transient initial conditions. The
TEXT: H (optional) TEMP value is the temperature at which this dev-
TEXT: H ice is to operate, and overrides the temperature specifica-
TEXT: H tion on the .OPTION control line. The temperature specifi-
TEXT: H cation is ONLY valid for level 1, 2, 3, and 6 MOSFETs, not
TEXT: H for level 4 or 5 (BSIM) devices.
TEXT: H
TEXT: H
SUBJECT: MOSFET Models
TITLE: MOSFET Models (NMOS/PMOS)
TEXT: H
TEXT: H _3._4._8. _M_O_S_F_E_T _M_o_d_e_l_s (_N_M_O_S/_P_M_O_S)
TEXT: H
TEXT: H
TEXT: H SPICE provides four MOSFET device models, which differ
TEXT: H in the formulation of the I-V characteristic. The variable
TEXT: H LEVEL specifies the model to be used:
TEXT: H
TEXT: H LEVEL=1 -> Shichman-Hodges
TEXT: H LEVEL=2 -> MOS2 (as described in [1])
TEXT: H LEVEL=3 -> MOS3, a semi-empirical model(see [1])
TEXT: H LEVEL=4 -> BSIM (as described in [3])
TEXT: H LEVEL=5 -> new BSIM (BSIM2; as described in [5])
TEXT: H LEVEL=6 -> MOS6 (as described in [2])
TEXT: H
TEXT: H
TEXT: H The dc characteristics of the level 1 through level 3 MOS-
TEXT: H FETs are defined by the device parameters VTO, KP, LAMBDA,
TEXT: H PHI and GAMMA. These parameters are computed by SPICE if
TEXT: H process parameters (NSUB, TOX, ...) are given, but user-
TEXT: H specified values always override. VTO is positive (nega-
TEXT: H tive) for enhancement mode and negative (positive) for
TEXT: H depletion mode N-channel (P-channel) devices. Charge
TEXT: H storage is modeled by three constant capacitors, CGSO, CGDO,
TEXT: H and CGBO which represent overlap capacitances, by the non-
TEXT: H linear thin-oxide capacitance which is distributed among the
TEXT: H gate, source, drain, and bulk regions, and by the nonlinear
TEXT: H depletion-layer capacitances for both substrate junctions
TEXT: H divided into bottom and periphery, which vary as the MJ and
TEXT: H MJSW power of junction voltage respectively, and are deter-
TEXT: H mined by the parameters CBD, CBS, CJ, CJSW, MJ, MJSW and PB.
TEXT: H Charge storage effects are modeled by the piecewise linear
TEXT: H voltages-dependent capacitance model proposed by Meyer. The
TEXT: H thin-oxide charge-storage effects are treated slightly dif-
TEXT: H ferent for the LEVEL=1 model. These voltage-dependent capa-
TEXT: H citances are included only if TOX is specified in the input
TEXT: H description and they are represented using Meyer's formula-
TEXT: H tion.
TEXT: H
TEXT: H There is some overlap among the parameters describing
TEXT: H the junctions, e.g. the reverse current can be input either
TEXT: H 2
TEXT: H as IS (in A) or as JS (in A/m ). Whereas the first is an
TEXT: H absolute value the second is multiplied by AD and AS to give
TEXT: H the reverse current of the drain and source junctions
TEXT: H respectively. This methodology has been chosen since there
TEXT: H is no sense in relating always junction characteristics with
TEXT: H AD and AS entered on the device line; the areas can be
TEXT: H defaulted. The same idea applies also to the zero-bias
TEXT: H junction capacitances CBD and CBS (in F) on one hand, and CJ
TEXT: H 2
TEXT: H (in F/m ) on the other. The parasitic drain and source
TEXT: H series resistance can be expressed as either RD and RS (in
TEXT: H ohms) or RSH (in ohms/sq.), the latter being multiplied by
TEXT: H the number of squares NRD and NRS input on the device line.
TEXT: H
TEXT: H A discontinuity in the MOS level 3 model with respect
TEXT: H to the KAPPA parameter has been detected (see [10]). The
TEXT: H supplied fix has been implemented in Spice3f2 and later.
TEXT: H Since this fix may affect parameter fitting, the option
TEXT: H "BADMOS3" may be set to use the old implementation (see the
TEXT: H section on simulation variables and the ".OPTIONS" line).
TEXT: H SPICE level 1, 2, 3 and 6 parameters:
TEXT: H
TEXT: H
TEXT: H name parameter units default example
TEXT: H
TEXT: H 1 LEVEL model index - 1
TEXT: H 2 VTO zero-bias threshold voltage (V ) V 0.0 1.0
TEXT: H TO 2
TEXT: H 3 KP transconductance parameter A/V 2.0e-5 3.1e-5
TEXT: H 1/2
TEXT: H 4 GAMMA bulk threshold parameter (\) V 0.0 0.37
TEXT: H 5 PHI surface potential (U) V 0.6 0.65
TEXT: H 6 LAMBDA channel-length modulation
TEXT: H (MOS1 and MOS2 only) (L) 1/V 0.0 0.02
TEXT: H 7 RD drain ohmic resistance Z 0.0 1.0
TEXT: H 8 RS source ohmic resistance Z 0.0 1.0
TEXT: H 9 CBD zero-bias B-D junction capacitance F 0.0 20fF
TEXT: H 10 CBS zero-bias B-S junction capacitance F 0.0 20fF
TEXT: H 11 IS bulk junction saturation current (I ) A 1.0e-14 1.0e-15
TEXT: H S
TEXT: H 12 PB bulk junction potential V 0.8 0.87
TEXT: H 13 CGSO gate-source overlap capacitance
TEXT: H per meter channel width F/m 0.0 4.0e-11
TEXT: H 14 CGDO gate-drain overlap capacitance
TEXT: H per meter channel width F/m 0.0 4.0e-11
TEXT: H 15 CGBO gate-bulk overlap capacitance
TEXT: H per meter channel length F/m 0.0 2.0e-10
TEXT: H 16 RSH drain and source diffusion
TEXT: H sheet resistance Z/[] 0.0 10.0
TEXT: H 17 CJ zero-bias bulk junction bottom cap.
TEXT: H 2
TEXT: H per sq-meter of junction area F/m 0.0 2.0e-4
TEXT: H 18 MJ bulk junction bottom grading coeff. - 0.5 0.5
TEXT: H 19 CJSW zero-bias bulk junction sidewall cap.
TEXT: H per meter of junction perimeter F/m 0.0 1.0e-9
TEXT: H 20 MJSW bulk junction sidewall grading coeff. - 0.50(level1)
TEXT: H 0.33(level2, 3)
TEXT: H 21 JS bulk junction saturation current
TEXT: H 2
TEXT: H per sq-meter of junction area A/m 1.0e-8
TEXT: H 22 TOX oxide thickness meter 1.0e-7 1.0e-7
TEXT: H 3
TEXT: H 23 NSUB substrate doping 1/cm 0.0 4.0e15
TEXT: H 2
TEXT: H 24 NSS surface state density 1/cm 0.0 1.0e10
TEXT: H 2
TEXT: H 25 NFS fast surface state density 1/cm 0.0 1.0e10
TEXT: H
TEXT: H _c_o_n_t_i_n_u_e_d
TEXT: H
TEXT: H name parameter units default example
TEXT: H
TEXT: H 26 TPG type of gate material: - 1.0
TEXT: H +1 opp. to substrate
TEXT: H -1 same as substrate
TEXT: H 0 Al gate
TEXT: H 27 XJ metallurgical junction depth meter 0.0 1M
TEXT: H 28 LD lateral diffusion meter 0.0 0.8M
TEXT: H 2
TEXT: H 29 UO surface mobility cm /Vs 600 700
TEXT: H 30 UCRIT critical field for mobility
TEXT: H degradation (MOS2 only) V/cm 1.0e4 1.0e4
TEXT: H 31 UEXP critical field exponent in
TEXT: H mobility degradation (MOS2 only) - 0.0 0.1
TEXT: H 32 UTRA transverse field coeff. (mobility)
TEXT: H (deleted for MOS2) - 0.0 0.3
TEXT: H 33 VMAX maximum drift velocity of carriers m/s 0.0 5.0e4
TEXT: H 34 NEFF total channel-charge (fixed and
TEXT: H mobile) coefficient (MOS2 only) - 1.0 5.0
TEXT: H 35 KF flicker noise coefficient - 0.0 1.0e-26
TEXT: H 36 AF flicker noise exponent - 1.0 1.2
TEXT: H 37 FC coefficient for forward-bias
TEXT: H depletion capacitance formula - 0.5
TEXT: H 38 DELTA width effect on threshold voltage
TEXT: H (MOS2 and MOS3) - 0.0 1.0
TEXT: H 39 THETA mobility modulation (MOS3 only) 1/V 0.0 0.1
TEXT: H 40 ETA static feedback (MOS3 only) - 0.0 1.0
TEXT: H 41 KAPPA saturation field factor (MOS3 only) - 0.2 0.5
TEXT: H o
TEXT: H 42 TNOM parameter measurement temperature C 27 50
TEXT: H
TEXT: H
TEXT: H
TEXT: H
TEXT: H The level 4 and level 5 (BSIM1 and BSIM2) parameters
TEXT: H are all values obtained from process characterization, and
TEXT: H can be generated automatically. J. Pierret [4] describes a
TEXT: H means of generating a 'process' file, and the program
TEXT: H Proc2Mod provided with SPICE3 converts this file into a se-
TEXT: H quence of BSIM1 ".MODEL" lines suitable for inclusion in a
TEXT: H SPICE input file. Parameters marked below with an * in the
TEXT: H l/w column also have corresponding parameters with a length
TEXT: H and width dependency. For example, VFB is the basic parame-
TEXT: H ter with units of Volts, and LVFB and WVFB also exist and
TEXT: H have units of Volt-Mmeter The formula
TEXT: H
TEXT: H P P
TEXT: H L W
TEXT: H P = P + ---------- + ----------
TEXT: H 0
TEXT: H L W
TEXT: H effective effective
TEXT: H
TEXT: H is used to evaluate the parameter for the actual device
TEXT: H specified with
TEXT: H
TEXT: H L = L - DL
TEXT: H effective input
TEXT: H and
TEXT: H
TEXT: H W = W - DW
TEXT: H effective input
TEXT: H
TEXT: H
TEXT: H
TEXT: H Note that unlike the other models in SPICE, the BSIM
TEXT: H model is designed for use with a process characterization
TEXT: H system that provides all the parameters, thus there are no
TEXT: H defaults for the parameters, and leaving one out is con-
TEXT: H sidered an error. For an example set of parameters and the
TEXT: H format of a process file, see the SPICE2 implementation
TEXT: H notes[3].
TEXT: H
TEXT: H For more information on BSIM2, see reference [5].
TEXT: H
TEXT: H SPICE BSIM (level 4) parameters.
TEXT: H
TEXT: H
TEXT: H name parameter units l/w
TEXT: H
TEXT: H VFB flat-band voltage V *
TEXT: H PHI surface inversion potential V *
TEXT: H 1/2
TEXT: H K1 body effect coefficient V *
TEXT: H K2 drain/source depletion charge-sharing coefficient - *
TEXT: H ETA zero-bias drain-induced barrier-lowering coefficient - *
TEXT: H 2
TEXT: H MUZ zero-bias mobility cm /V-s
TEXT: H DL shortening of channel Mm
TEXT: H DW narrowing of channel Mm
TEXT: H -1
TEXT: H U0 zero-bias transverse-field mobility degradation coefficient V *
TEXT: H U1 zero-bias velocity saturation coefficient Mm/V *
TEXT: H 2 2
TEXT: H X2MZ sens. of mobility to substrate bias at v =0 cm /V -s *
TEXT: H ds -1
TEXT: H X2E sens. of drain-induced barrier lowering effect to substrate bias V *
TEXT: H -1
TEXT: H X3E sens. of drain-induced barrier lowering effect to drain bias at V =V V *
TEXT: H ds dd -2
TEXT: H X2U0 sens. of transverse field mobility degradation effect to substrate bias V *
TEXT: H -2
TEXT: H X2U1 sens. of velocity saturation effect to substrate bias MmV *
TEXT: H 2 2
TEXT: H MUS mobility at zero substrate bias and at V =V cm /V -s
TEXT: H ds dd 2 2
TEXT: H X2MS sens. of mobility to substrate bias at V =V cm /V -s *
TEXT: H ds dd 2 2
TEXT: H X3MS sens. of mobility to drain bias at V =V cm /V -s *
TEXT: H ds dd -2
TEXT: H X3U1 sens. of velocity saturation effect on drain bias at V =V MmV *
TEXT: H ds dd
TEXT: H TOX gate oxide thickness Mm
TEXT: H o
TEXT: H TEMP temperature at which parameters were measured C
TEXT: H VDD measurement bias range V
TEXT: H CGDO gate-drain overlap capacitance per meter channel width F/m
TEXT: H CGSO gate-source overlap capacitance per meter channel width F/m
TEXT: H CGBO gate-bulk overlap capacitance per meter channel length F/m
TEXT: H XPART gate-oxide capacitance-charge model flag -
TEXT: H N0 zero-bias subthreshold slope coefficient - *
TEXT: H NB sens. of subthreshold slope to substrate bias - *
TEXT: H ND sens. of subthreshold slope to drain bias - *
TEXT: H RSH drain and source diffusion sheet resistance Z/[]
TEXT: H 2
TEXT: H JS source drain junction current density A/m
TEXT: H PB built in potential of source drain junction V
TEXT: H MJ Grading coefficient of source drain junction -
TEXT: H PBSW built in potential of source, drain junction sidewall V
TEXT: H MJSW grading coefficient of source drain junction sidewall -
TEXT: H 2
TEXT: H CJ Source drain junction capacitance per unit area F/m
TEXT: H CJSW source drain junction sidewall capacitance per unit length F/m
TEXT: H WDF source drain junction default width m
TEXT: H DELL Source drain junction length reduction m
TEXT: H
TEXT: H
TEXT: H
TEXT: H XPART = 0 selects a 40/60 drain/source charge partition
TEXT: H in saturation, while XPART=1 selects a 0/100 drain/source
TEXT: H charge partition.
TEXT: H
TEXT: H
TEXT: H ND, NG, and NS are the drain, gate, and source nodes,
TEXT: H respectively. MNAME is the model name, AREA is the area
TEXT: H factor, and OFF indicates an (optional) initial condition on
TEXT: H the device for dc analysis. If the area factor is omitted,
TEXT: H a value of 1.0 is assumed. The (optional) initial condition
TEXT: H specification, using IC=VDS, VGS is intended for use with
TEXT: H the UIC option on the .TRAN control line, when a transient
TEXT: H analysis is desired starting from other than the quiescent
TEXT: H operating point. See the .IC control line for a better way
TEXT: H to set initial conditions.
TEXT: H
TEXT: H
SUBJECT: MESFETs
TITLE: MESFETs
TEXT: H
TEXT: H _3._4._9. _M_E_S_F_E_T_s
TEXT: H
TEXT: H _G_e_n_e_r_a_l _f_o_r_m:
TEXT: H
TEXT: H ZXXXXXXX ND NG NS MNAME <AREA> <OFF> <IC=VDS, VGS>
TEXT: H
TEXT: H
TEXT: H _E_x_a_m_p_l_e_s:
TEXT: H
TEXT: H Z1 7 2 3 ZM1 OFF
TEXT: H
TEXT: H
TEXT: H
TEXT: H
SUBJECT: MESFET Models
TITLE: MESFET Models (NMF/PMF)
TEXT: H
TEXT: H _3._4._1_0. _M_E_S_F_E_T _M_o_d_e_l_s (_N_M_F/_P_M_F)
TEXT: H
TEXT: H
TEXT: H The MESFET model is derived from the GaAs FET model of
TEXT: H Statz et al. as described in [11]. The dc characteristics
TEXT: H are defined by the parameters VTO, B, and BETA, which deter-
TEXT: H mine the variation of drain current with gate voltage, AL-
TEXT: H PHA, which determines saturation voltage, and LAMBDA, which
TEXT: H determines the output conductance. The formula are given
TEXT: H by:
TEXT: H
TEXT: H 3
TEXT: H 2
TEXT: H B (V -V ) | | V | | 3
TEXT: H gs T ds _
TEXT: H I = --------------- |1 - |1-A---| |(1 + L V ) for 0 < V <
TEXT: H d ds ds
TEXT: H 1 + b(V - V ) | | 3 | | A
TEXT: H gs T
TEXT: H 2
TEXT: H B (V -V ) 3
TEXT: H gs T _
TEXT: H I = ---------------(1 + L V ) for V >
TEXT: H d ds ds
TEXT: H 1 + b(V - V ) A
TEXT: H gs T
TEXT: H
TEXT: H
TEXT: H Two ohmic resistances, RD and RS, are included. Charge
TEXT: H storage is modeled by total gate charge as a function of
TEXT: H gate-drain and gate-source voltages and is defined by the
TEXT: H parameters CGS, CGD, and PB.
TEXT: H
TEXT: H
TEXT: H
TEXT: H
TEXT: H name parameter units default example area
TEXT: H
TEXT: H 1 VTO pinch-off voltage V -2.0 -2.0
TEXT: H 2
TEXT: H 2 BETA transconductance parameter A/V 1.0e-4 1.0e-3 *
TEXT: H 3 B doping tail extending parameter 1/V 0.3 0.3 *
TEXT: H 4 ALPHA saturation voltage parameter 1/V 2 2 *
TEXT: H 5 LAMBDA channel-length modulation
TEXT: H parameter 1/V 0 1.0e-4
TEXT: H 6 RD drain ohmic resistance Z 0 100 *
TEXT: H 7 RS source ohmic resistance Z 0 100 *
TEXT: H 8 CGS zero-bias G-S junction capacitance F 0 5pF *
TEXT: H 9 CGD zero-bias G-D junction capacitance F 0 1pF *
TEXT: H 10 PB gate junction potential V 1 0.6
TEXT: H 11 KF flicker noise coefficient - 0
TEXT: H 12 AF flicker noise exponent - 1
TEXT: H 13 FC coefficient for forward-bias - 0.5
TEXT: H depletion capacitance formula
TEXT: H
TEXT: H
SUBJECT: ANALYSES AND OUTPUT CONTROL
TITLE: ANALYSES AND OUTPUT CONTROL
TEXT: H
TEXT: H _4. _A_N_A_L_Y_S_E_S _A_N_D _O_U_T_P_U_T _C_O_N_T_R_O_L
TEXT: H
TEXT: H
TEXT: H The following command lines are for specifying analyses
TEXT: H or plots within the circuit description file. Parallel com-
TEXT: H mands exist in the interactive command interpreter (detailed
TEXT: H in the following section). Specifying analyses and plots
TEXT: H (or tables) in the input file is useful for batch runs.
TEXT: H Batch mode is entered when either the -b option is given or
TEXT: H when the default input source is redirected from a file. In
TEXT: H batch mode, the analyses specified by the control lines in
TEXT: H the input file (e.g. ".ac", ".tran", etc.) are immediately
TEXT: H executed (unless ".control" lines exists; see the section on
TEXT: H the interactive command interpretor). If the -r _r_a_w_f_i_l_e
TEXT: H option is given then all data generated is written to a
TEXT: H Spice3 rawfile. The rawfile may be read by either the
TEXT: H interactive mode of Spice3 or by nutmeg; see the previous
TEXT: H section for details. In this case, the .SAVE line (see
TEXT: H below) may be used to record the value of internal device
TEXT: H variables (see Appendix B).
TEXT: H
TEXT: H If a rawfile is not specified, then output plots (in
TEXT: H "line-printer" form) and tables can be printed according to
TEXT: H the .PRINT, .PLOT, and .FOUR control lines, described next.
TEXT: H .PLOT, .PRINT, and .FOUR lines are meant for compatibility
TEXT: H with Spice2.
TEXT: H
SUBTOPIC: NGSPICE:SIMULATOR VARIABLES
SUBTOPIC: NGSPICE:INITIAL CONDITIONS
SUBTOPIC: NGSPICE:ANALYSES
SUBTOPIC: NGSPICE:BATCH OUTPUT
SUBJECT: SIMULATOR VARIABLES
TITLE: SIMULATOR VARIABLES (.OPTIONS)
TEXT: H
TEXT: H _4._1. _S_I_M_U_L_A_T_O_R _V_A_R_I_A_B_L_E_S (._O_P_T_I_O_N_S)
TEXT: H
TEXT: H
TEXT: H Various parameters of the simulations available in
TEXT: H Spice3 can be altered to control the accuracy, speed, or
TEXT: H default values for some devices. These parameters may be
TEXT: H changed via the "set" command (described later in the sec-
TEXT: H tion on the interactive front-end) or via the ".OPTIONS"
TEXT: H line:
TEXT: H
TEXT: H _G_e_n_e_r_a_l _f_o_r_m:
TEXT: H
TEXT: H .OPTIONS OPT1 OPT2 ... (or OPT=OPTVAL ...)
TEXT: H
TEXT: H
TEXT: H _E_x_a_m_p_l_e_s:
TEXT: H
TEXT: H .OPTIONS RELTOL=.005 TRTOL=8
TEXT: H
TEXT: H
TEXT: H The options line allows the user to reset program con-
TEXT: H trol and user options for specific simulation purposes.
TEXT: H Additional options for Nutmeg may be specified as well and
TEXT: H take effect when Nutmeg reads the input file. Options
TEXT: H specified to Nutmeg via the 'set' command are also passed on
TEXT: H to SPICE3 as if specified on a .OPTIONS line. See the fol-
TEXT: H lowing section on the interactive command interpreter for
TEXT: H the parameters which may be set with a .OPTIONS line and the
TEXT: H format of the 'set' command. Any combination of the follow-
TEXT: H ing options may be included, in any order. 'x' (below)
TEXT: H represents some positive number.
TEXT: H
TEXT: H option effect
TEXT: H
TEXT: H ABSTOL=x resets the absolute current error tolerance of the
TEXT: H program.
TEXT: H The default value is 1 picoamp.
TEXT: H BADMOS3 Use the older version of the MOS3 model with the "kappa"
TEXT: H discontinuity.
TEXT: H CHGTOL=x resets the charge tolerance of the program. The default
TEXT: H value is 1.0e-14.
TEXT: H DEFAD=x resets the value for MOS drain diffusion area; the
TEXT: H default is 0.0.
TEXT: H DEFAS=x resets the value for MOS source diffusion area; the
TEXT: H default is 0.0.
TEXT: H DEFL=x resets the value for MOS channel length; the default
TEXT: H is 100.0 micrometer.
TEXT: H DEFW=x resets the value for MOS channel width; the default
TEXT: H is 100.0 micrometer.
TEXT: H GMIN=x resets the value of GMIN, the minimum conductance
TEXT: H allowed by the program.
TEXT: H The default value is 1.0e-12.
TEXT: H ITL1=x resets the dc iteration limit. The default is 100.
TEXT: H ITL2=x resets the dc transfer curve iteration limit. The
TEXT: H default is 50.
TEXT: H ITL3=x resets the lower transient analysis iteration limit.
TEXT: H the default value is 4. (Note: not implemented in Spice3).
TEXT: H ITL4=x resets the transient analysis timepoint iteration limit.
TEXT: H the default is 10.
TEXT: H ITL5=x resets the transient analysis total iteration limit.
TEXT: H the default is 5000. Set ITL5=0 to omit this test.
TEXT: H (Note: not implemented in Spice3).
TEXT: H KEEPOPINFO Retain the operating point information when either an
TEXT: H AC, Distortion, or Pole-Zero analysis is run.
TEXT: H This is particularly useful if the circuit is large
TEXT: H and you do not want to run a (redundant) ".OP" analysis.
TEXT: H METHOD=name sets the numerical integration method used by SPICE.
TEXT: H Possible names are "Gear" or "trapezoidal" (or just "trap").
TEXT: H The default is trapezoidal.
TEXT: H PIVREL=x resets the relative ratio between the largest column entry
TEXT: H and an acceptable pivot value. The default value is 1.0e-3.
TEXT: H In the numerical pivoting algorithm the allowed minimum
TEXT: H pivot value is determined by
TEXT: H EPSREL=AMAX1(PIVREL*MAXVAL, PIVTOL)
TEXT: H where MAXVAL is the maximum element in the column where
TEXT: H a pivot is sought (partial pivoting).
TEXT: H PIVTOL=x resets the absolute minimum value for a matrix entry
TEXT: H to be accepted as a pivot. The default value is 1.0e-13.
TEXT: H RELTOL=x resets the relative error tolerance of the program.
TEXT: H The
TEXT: H default value is 0.001 (0.1%).
TEXT: H TEMP=x Resets the operating temperature of the circuit. The
TEXT: H default value is 27 deg C (300 deg K). TEMP can be overridden
TEXT: H by a temperature specification on any temperature dependent
TEXT: H instance.
TEXT: H TNOM=x resets the nominal temperature at which device parameters
TEXT: H are measured. The default value is 27 deg C (300 deg K).
TEXT: H TNOM can be overridden by a specification on any temperature
TEXT: H dependent device model.
TEXT: H TRTOL=x resets the transient error tolerance. The default value
TEXT: H is 7.0. This parameter is an estimate of the factor by
TEXT: H which SPICE overestimates the actual truncation error.
TEXT: H TRYTOCOMPACT Applicable only to the LTRA model.
TEXT: H When specified, the simulator tries to condense LTRA transmission
TEXT: H lines' past history of input voltages and currents.
TEXT: H VNTOL=x resets the absolute voltage error tolerance of the
TEXT: H program. The default value is 1 microvolt.
TEXT: H
TEXT: H
TEXT: H In addition, the following options have the listed
TEXT: H effect when operating in spice2 emulation mode:
TEXT: H
TEXT: H option effect
TEXT: H
TEXT: H option effect
TEXT: H ACCT causes accounting and run time statistics to be printed
TEXT: H LIST causes the summary listing of the input data to be printed
TEXT: H NOMOD suppresses the printout of the model parameters
TEXT: H NOPAGE suppresses page ejects
TEXT: H NODE causes the printing of the node table.
TEXT: H OPTS causes the option values to be printed.
TEXT: H
TEXT: H
SUBJECT: INITIAL CONDITIONS
TITLE: INITIAL CONDITIONS
TEXT: H
TEXT: H _4._2. _I_N_I_T_I_A_L _C_O_N_D_I_T_I_O_N_S
TEXT: H
SUBTOPIC: NGSPICE:.NODESET
SUBTOPIC: NGSPICE:.IC
SUBJECT: .NODESET
TITLE: .NODESET: Specify Initial Node Voltage Guesses
TEXT: H
TEXT: H _4._2._1. ._N_O_D_E_S_E_T: _S_p_e_c_i_f_y _I_n_i_t_i_a_l _N_o_d_e _V_o_l_t_a_g_e _G_u_e_s_s_e_s
TEXT: H
TEXT: H _G_e_n_e_r_a_l _f_o_r_m:
TEXT: H
TEXT: H .NODESET V(NODNUM)=VAL V(NODNUM)=VAL ...
TEXT: H
TEXT: H
TEXT: H _E_x_a_m_p_l_e_s:
TEXT: H
TEXT: H .NODESET V(12)=4.5 V(4)=2.23
TEXT: H
TEXT: H
TEXT: H
TEXT: H The Nodeset line helps the program find the dc or ini-
TEXT: H tial transient solution by making a preliminary pass with
TEXT: H the specified nodes held to the given voltages. The res-
TEXT: H triction is then released and the iteration continues to the
TEXT: H true solution. The .NODESET line may be necessary for con-
TEXT: H vergence on bistable or a-stable circuits. In general, this
TEXT: H line should not be necessary.
TEXT: H
TEXT: H
SUBJECT: .IC
TITLE: .IC: Set Initial Conditions
TEXT: H
TEXT: H _4._2._2. ._I_C: _S_e_t _I_n_i_t_i_a_l _C_o_n_d_i_t_i_o_n_s
TEXT: H
TEXT: H _G_e_n_e_r_a_l _f_o_r_m:
TEXT: H
TEXT: H .IC V(NODNUM)=VAL V(NODNUM)=VAL ...
TEXT: H
TEXT: H
TEXT: H _E_x_a_m_p_l_e_s:
TEXT: H
TEXT: H .IC V(11)=5 V(4)=-5 V(2)=2.2
TEXT: H
TEXT: H
TEXT: H
TEXT: H The IC line is for setting transient initial condi-
TEXT: H tions. It has two different interpretations, depending on
TEXT: H whether the UIC parameter is specified on the .TRAN control
TEXT: H line. Also, one should not confuse this line with the
TEXT: H .NODESET line. The .NODESET line is only to help dc conver-
TEXT: H gence, and does not affect final bias solution (except for
TEXT: H multi-stable circuits). The two interpretations of this
TEXT: H line are as follows:
TEXT: H
TEXT: H 1. When the UIC parameter is specified on the .TRAN line,
TEXT: H then the node voltages specified on the .IC control line are
TEXT: H used to compute the capacitor, diode, BJT, JFET, and MOSFET
TEXT: H initial conditions. This is equivalent to specifying the
TEXT: H IC=... parameter on each device line, but is much more con-
TEXT: H venient. The IC=... parameter can still be specified and
TEXT: H takes precedence over the .IC values. Since no dc bias
TEXT: H (initial transient) solution is computed before the tran-
TEXT: H sient analysis, one should take care to specify all dc
TEXT: H source voltages on the .IC control line if they are to be
TEXT: H used to compute device initial conditions.
TEXT: H
TEXT: H 2. When the UIC parameter is not specified on the .TRAN
TEXT: H control line, the dc bias (initial transient) solution is
TEXT: H computed before the transient analysis. In this case, the
TEXT: H node voltages specified on the .IC control line is forced to
TEXT: H the desired initial values during the bias solution. During
TEXT: H transient analysis, the constraint on these node voltages is
TEXT: H removed. This is the preferred method since it allows SPICE
TEXT: H to compute a consistent dc solution.
TEXT: H
SUBJECT: ANALYSES
TITLE: ANALYSES
TEXT: H
TEXT: H _4._3. _A_N_A_L_Y_S_E_S
TEXT: H
TEXT: H
SUBTOPIC: NGSPICE:.AC
SUBTOPIC: NGSPICE:.DC
SUBTOPIC: NGSPICE:.DISTO
SUBTOPIC: NGSPICE:.NOISE
SUBTOPIC: NGSPICE:.OP
SUBTOPIC: NGSPICE:.PZ
SUBTOPIC: NGSPICE:.SENS
SUBTOPIC: NGSPICE:.TF
SUBTOPIC: NGSPICE:.TRAN
SUBJECT: .AC
TITLE: .AC: Small-Signal AC Analysis
TEXT: H
TEXT: H _4._3._1. ._A_C: _S_m_a_l_l-_S_i_g_n_a_l _A_C _A_n_a_l_y_s_i_s
TEXT: H
TEXT: H _G_e_n_e_r_a_l _f_o_r_m:
TEXT: H
TEXT: H .AC DEC ND FSTART FSTOP
TEXT: H .AC OCT NO FSTART FSTOP
TEXT: H .AC LIN NP FSTART FSTOP
TEXT: H
TEXT: H
TEXT: H _E_x_a_m_p_l_e_s:
TEXT: H
TEXT: H .AC DEC 10 1 10K
TEXT: H .AC DEC 10 1K 100MEG
TEXT: H .AC LIN 100 1 100HZ
TEXT: H
TEXT: H
TEXT: H
TEXT: H
TEXT: H DEC stands for decade variation, and ND is the number
TEXT: H of points per decade. OCT stands for octave variation, and
TEXT: H NO is the number of points per octave. LIN stands for
TEXT: H linear variation, and NP is the number of points. FSTART is
TEXT: H the starting frequency, and FSTOP is the final frequency.
TEXT: H If this line is included in the input file, SPICE performs
TEXT: H an AC analysis of the circuit over the specified frequency
TEXT: H range. Note that in order for this analysis to be meaning-
TEXT: H ful, at least one independent source must have been speci-
TEXT: H fied with an ac value.
TEXT: H
TEXT: H
SUBJECT: .DC
TITLE: .DC: DC Transfer Function
TEXT: H
TEXT: H _4._3._2. ._D_C: _D_C _T_r_a_n_s_f_e_r _F_u_n_c_t_i_o_n
TEXT: H
TEXT: H _G_e_n_e_r_a_l _f_o_r_m:
TEXT: H
TEXT: H .DC SRCNAM VSTART VSTOP VINCR [SRC2 START2 STOP2 INCR2]
TEXT: H
TEXT: H
TEXT: H _E_x_a_m_p_l_e_s:
TEXT: H
TEXT: H .DC VIN 0.25 5.0 0.25
TEXT: H .DC VDS 0 10 .5 VGS 0 5 1
TEXT: H .DC VCE 0 10 .25 IB 0 10U 1U
TEXT: H
TEXT: H
TEXT: H
TEXT: H The DC line defines the dc transfer curve source and
TEXT: H sweep limits (again with capacitors open and inductors
TEXT: H shorted). SRCNAM is the name of an independent voltage or
TEXT: H current source. VSTART, VSTOP, and VINCR are the starting,
TEXT: H final, and incrementing values respectively. The first
TEXT: H example causes the value of the voltage source VIN to be
TEXT: H swept from 0.25 Volts to 5.0 Volts in increments of 0.25
TEXT: H Volts. A second source (SRC2) may optionally be specified
TEXT: H with associated sweep parameters. In this case, the first
TEXT: H source is swept over its range for each value of the second
TEXT: H source. This option can be useful for obtaining semiconduc-
TEXT: H tor device output characteristics. See the second example
TEXT: H circuit description in Appendix A.
TEXT: H
TEXT: H
SUBJECT: .DISTO
TITLE: .DISTO: Distortion Analysis
TEXT: H
TEXT: H _4._3._3. ._D_I_S_T_O: _D_i_s_t_o_r_t_i_o_n _A_n_a_l_y_s_i_s
TEXT: H
TEXT: H _G_e_n_e_r_a_l _f_o_r_m:
TEXT: H
TEXT: H .DISTO DEC ND FSTART FSTOP <F2OVERF1>
TEXT: H .DISTO OCT NO FSTART FSTOP <F2OVERF1>
TEXT: H .DISTO LIN NP FSTART FSTOP <F2OVERF1>
TEXT: H
TEXT: H
TEXT: H _E_x_a_m_p_l_e_s:
TEXT: H
TEXT: H .DISTO DEC 10 1kHz 100MHz
TEXT: H .DISTO DEC 10 1kHz 100MHz 0.9
TEXT: H
TEXT: H
TEXT: H
TEXT: H
TEXT: H The Disto line does a small-signal distortion analysis
TEXT: H of the circuit. A multi-dimensional Volterra series
TEXT: H analysis is done using multi-dimensional Taylor series to
TEXT: H represent the nonlinearities at the operating point. Terms
TEXT: H of up to third order are used in the series expansions.
TEXT: H
TEXT: H If the optional parameter F2OVERF1 is not specified,
TEXT: H .DISTO does a harmonic analysis - i.e., it analyses distor-
TEXT: H tion in the circuit using only a single input frequency F1,
TEXT: H which is swept as specified by arguments of the .DISTO com-
TEXT: H mand exactly as in the .AC command. Inputs at this fre-
TEXT: H quency may be present at more than one input source, and
TEXT: H their magnitudes and phases are specified by the arguments
TEXT: H of the DISTOF1 keyword in the input file lines for the input
TEXT: H sources (see the description for independent sources). (The
TEXT: H arguments of the DISTOF2 keyword are not relevant in this
TEXT: H case). The analysis produces information about the A.C.
TEXT: H values of all node voltages and branch currents at the har-
TEXT: H monic frequencies 2F1 and 3F1, vs. the input frequency F1 as
TEXT: H it is swept. (A value of 1 (as a complex distortion output)
TEXT: H signifies cos(2J(2F1)t) at 2F1 and cos(2J(3F1)t) at 3F1,
TEXT: H using the convention that 1 at the input fundamental fre-
TEXT: H quency is equivalent to cos(2JF1t).) The distortion com-
TEXT: H ponent desired (2F1 or 3F1) can be selected using commands
TEXT: H in nutmeg, and then printed or plotted. (Normally, one is
TEXT: H interested primarily in the magnitude of the harmonic com-
TEXT: H ponents, so the magnitude of the AC distortion value is
TEXT: H looked at). It should be noted that these are the A.C.
TEXT: H values of the actual harmonic components, and are not equal
TEXT: H to HD2 and HD3. To obtain HD2 and HD3, one must divide by
TEXT: H the corresponding A.C. values at F1, obtained from an .AC
TEXT: H line. This division can be done using nutmeg commands.
TEXT: H
TEXT: H If the optional F2OVERF1 parameter is specified, it
TEXT: H should be a real number between (and not equal to) 0.0 and
TEXT: H 1.0; in this case, .DISTO does a spectral analysis. It con-
TEXT: H siders the circuit with sinusoidal inputs at two different
TEXT: H frequencies F1 and F2. F1 is swept according to the .DISTO
TEXT: H control line options exactly as in the .AC control line. F2
TEXT: H is kept fixed at a single frequency as F1 sweeps - the value
TEXT: H at which it is kept fixed is equal to F2OVERF1 times FSTART.
TEXT: H Each independent source in the circuit may potentially have
TEXT: H two (superimposed) sinusoidal inputs for distortion, at the
TEXT: H frequencies F1 and F2. The magnitude and phase of the F1
TEXT: H component are specified by the arguments of the DISTOF1 key-
TEXT: H word in the source's input line (see the description of
TEXT: H independent sources); the magnitude and phase of the F2 com-
TEXT: H ponent are specified by the arguments of the DISTOF2 key-
TEXT: H word. The analysis produces plots of all node
TEXT: H voltages/branch currents at the intermodulation product fre-
TEXT: H quencies F1 + F2, F1 - F2, and (2 F1) - F2, vs the swept
TEXT: H frequency F1. The IM product of interest may be selected
TEXT: H using the setplot command, and displayed with the print and
TEXT: H plot commands. It is to be noted as in the harmonic
TEXT: H analysis case, the results are the actual AC voltages and
TEXT: H currents at the intermodulation frequencies, and need to be
TEXT: H normalized with respect to .AC values to obtain the IM
TEXT: H parameters.
TEXT: H
TEXT: H If the DISTOF1 or DISTOF2 keywords are missing from the
TEXT: H description of an independent source, then that source is
TEXT: H assumed to have no input at the corresponding frequency.
TEXT: H The default values of the magnitude and phase are 1.0 and
TEXT: H 0.0 respectively. The phase should be specified in degrees.
TEXT: H
TEXT: H It should be carefully noted that the number F2OVERF1
TEXT: H should ideally be an irrational number, and that since this
TEXT: H is not possible in practice, efforts should be made to keep
TEXT: H the denominator in its fractional representation as large as
TEXT: H possible, certainly above 3, for accurate results (i.e., if
TEXT: H F2OVERF1 is represented as a fraction A/B, where A and B are
TEXT: H integers with no common factors, B should be as large as
TEXT: H possible; note that A < B because F2OVERF1 is constrained to
TEXT: H be < 1). To illustrate why, consider the cases where
TEXT: H F2OVERF1 is 49/100 and 1/2. In a spectral analysis, the
TEXT: H outputs produced are at F1 + F2, F1 - F2 and 2 F1 - F2. In
TEXT: H the latter case, F1 - F2 = F2, so the result at the F1-F2
TEXT: H component is erroneous because there is the strong fundamen-
TEXT: H tal F2 component at the same frequency. Also, F1 + F2 = 2
TEXT: H F1 - F2 in the latter case, and each result is erroneous
TEXT: H individually. This problem is not there in the case where
TEXT: H F2OVERF1 = 49/100, because F1-F2 = 51/100 F1 < > 49/100 F1 =
TEXT: H F2. In this case, there are two very closely spaced fre-
TEXT: H quency components at F2 and F1 - F2. One of the advantages
TEXT: H of the Volterra series technique is that it computes distor-
TEXT: H tions at mix frequencies expressed symbolically (i.e. n F1 +
TEXT: H m F2), therefore one is able to obtain the strengths of dis-
TEXT: H tortion components accurately even if the separation between
TEXT: H them is very small, as opposed to transient analysis for
TEXT: H example. The disadvantage is of course that if two of the
TEXT: H mix frequencies coincide, the results are not merged
TEXT: H together and presented (though this could presumably be done
TEXT: H as a postprocessing step). Currently, the interested user
TEXT: H should keep track of the mix frequencies himself or herself
TEXT: H and add the distortions at coinciding mix frequencies
TEXT: H together should it be necessary.
TEXT: H
TEXT: H
SUBJECT: .NOISE
TITLE: .NOISE: Noise Analysis
TEXT: H
TEXT: H _4._3._4. ._N_O_I_S_E: _N_o_i_s_e _A_n_a_l_y_s_i_s
TEXT: H
TEXT: H _G_e_n_e_r_a_l _f_o_r_m:
TEXT: H
TEXT: H .NOISE V(OUTPUT <,REF>) SRC ( DEC | LIN | OCT ) PTS FSTART FSTOP
TEXT: H + <PTS_PER_SUMMARY>
TEXT: H
TEXT: H
TEXT: H _E_x_a_m_p_l_e_s:
TEXT: H
TEXT: H .NOISE V(5) VIN DEC 10 1kHz 100MHz
TEXT: H .NOISE V(5,3) V1 OCT 8 1.0 1.0e6 1
TEXT: H
TEXT: H
TEXT: H
TEXT: H The Noise line does a noise analysis of the circuit.
TEXT: H OUTPUT is the node at which the total output noise is
TEXT: H desired; if REF is specified, then the noise voltage
TEXT: H V(OUTPUT) - V(REF) is calculated. By default, REF is
TEXT: H assumed to be ground. SRC is the name of an independent
TEXT: H source to which input noise is referred. PTS, FSTART and
TEXT: H FSTOP are .AC type parameters that specify the frequency
TEXT: H range over which plots are desired. PTS_PER_SUMMARY is an
TEXT: H optional integer; if specified, the noise contributions of
TEXT: H each noise generator is produced every PTS_PER_SUMMARY fre-
TEXT: H quency points.
TEXT: H
TEXT: H The .NOISE control line produces two plots - one for
TEXT: H the Noise Spectral Density curves and one for the total
TEXT: H Integrated Noise over the specified frequency range. All
TEXT: H 2
TEXT: H noise voltages/currents are in squared units (V /Hz and
TEXT: H 2 2 2
TEXT: H A /Hz for spectral density, V and A for integrated noise).
TEXT: H
SUBJECT: .OP
TITLE: .OP: Operating Point Analysis
TEXT: H
TEXT: H _4._3._5. ._O_P: _O_p_e_r_a_t_i_n_g _P_o_i_n_t _A_n_a_l_y_s_i_s
TEXT: H
TEXT: H _G_e_n_e_r_a_l _f_o_r_m:
TEXT: H
TEXT: H .OP
TEXT: H
TEXT: H
TEXT: H
TEXT: H The inclusion of this line in an input file directs
TEXT: H SPICE to determine the dc operating point of the circuit
TEXT: H with inductors shorted and capacitors opened. Note: a DC
TEXT: H analysis is automatically performed prior to a transient
TEXT: H analysis to determine the transient initial conditions, and
TEXT: H prior to an AC small-signal, Noise, and Pole-Zero analysis
TEXT: H to determine the linearized, small-signal models for non-
TEXT: H linear devices (see the KEEPOPINFO variable above).
TEXT: H
TEXT: H
SUBJECT: .PZ
TITLE: .PZ: Pole-Zero Analysis
TEXT: H
TEXT: H _4._3._6. ._P_Z: _P_o_l_e-_Z_e_r_o _A_n_a_l_y_s_i_s
TEXT: H
TEXT: H _G_e_n_e_r_a_l _f_o_r_m:
TEXT: H
TEXT: H .PZ NODE1 NODE2 NODE3 NODE4 CUR POL
TEXT: H .PZ NODE1 NODE2 NODE3 NODE4 CUR ZER
TEXT: H .PZ NODE1 NODE2 NODE3 NODE4 CUR PZ
TEXT: H .PZ NODE1 NODE2 NODE3 NODE4 VOL POL
TEXT: H .PZ NODE1 NODE2 NODE3 NODE4 VOL ZER
TEXT: H .PZ NODE1 NODE2 NODE3 NODE4 VOL PZ
TEXT: H
TEXT: H
TEXT: H _E_x_a_m_p_l_e_s:
TEXT: H
TEXT: H .PZ 1 0 3 0 CUR POL
TEXT: H .PZ 2 3 5 0 VOL ZER
TEXT: H .PZ 4 1 4 1 CUR PZ
TEXT: H
TEXT: H
TEXT: H
TEXT: H
TEXT: H CUR stands for a transfer function of the type (output
TEXT: H voltage)/(input current) while VOL stands for a transfer
TEXT: H function of the type (output voltage)/(input voltage). POL
TEXT: H stands for pole analysis only, ZER for zero analysis only
TEXT: H and PZ for both. This feature is provided mainly because if
TEXT: H there is a nonconvergence in finding poles or zeros, then,
TEXT: H at least the other can be found. Finally, NODE1 and NODE2
TEXT: H are the two input nodes and NODE3 and NODE4 are the two out-
TEXT: H put nodes. Thus, there is complete freedom regarding the
TEXT: H output and input ports and the type of transfer function.
TEXT: H
TEXT: H In interactive mode, the command syntax is the same
TEXT: H except that the first field is PZ instead of .PZ. To print
TEXT: H the results, one should use the command 'print all'.
TEXT: H
TEXT: H
SUBJECT: .SENS
TITLE: .SENS: DC or Small-Signal AC Sensitivity Analysis
TEXT: H
TEXT: H _4._3._7. ._S_E_N_S: _D_C _o_r _S_m_a_l_l-_S_i_g_n_a_l _A_C _S_e_n_s_i_t_i_v_i_t_y _A_n_a_l_y_s_i_s
TEXT: H
TEXT: H _G_e_n_e_r_a_l _f_o_r_m:
TEXT: H
TEXT: H .SENS OUTVAR
TEXT: H .SENS OUTVAR AC DEC ND FSTART FSTOP
TEXT: H .SENS OUTVAR AC OCT NO FSTART FSTOP
TEXT: H .SENS OUTVAR AC LIN NP FSTART FSTOP
TEXT: H
TEXT: H
TEXT: H _E_x_a_m_p_l_e_s:
TEXT: H
TEXT: H .SENS V(1,OUT)
TEXT: H .SENS V(OUT) AC DEC 10 100 100k
TEXT: H .SENS I(VTEST)
TEXT: H
TEXT: H
TEXT: H
TEXT: H
TEXT: H The sensitivity of OUTVAR to all non-zero device param-
TEXT: H eters is calculated when the SENS analysis is specified.
TEXT: H OUTVAR is a circuit variable (node voltage or voltage-source
TEXT: H branch current). The first form calculates sensitivity of
TEXT: H the DC operating-point value of OUTVAR. The second form
TEXT: H calculates sensitivity of the AC values of OUTVAR. The
TEXT: H parameters listed for AC sensitivity are the same as in an
TEXT: H AC analysis (see ".AC" above). The output values are in
TEXT: H dimensions of change in output per unit change of input (as
TEXT: H opposed to percent change in output or per percent change of
TEXT: H input).
TEXT: H
TEXT: H
SUBJECT: .TF
TITLE: .TF: Transfer Function Analysis
TEXT: H
TEXT: H _4._3._8. ._T_F: _T_r_a_n_s_f_e_r _F_u_n_c_t_i_o_n _A_n_a_l_y_s_i_s
TEXT: H
TEXT: H _G_e_n_e_r_a_l _f_o_r_m:
TEXT: H
TEXT: H .TF OUTVAR INSRC
TEXT: H
TEXT: H
TEXT: H _E_x_a_m_p_l_e_s:
TEXT: H
TEXT: H .TF V(5, 3) VIN
TEXT: H .TF I(VLOAD) VIN
TEXT: H
TEXT: H
TEXT: H
TEXT: H The TF line defines the small-signal output and input
TEXT: H for the dc small-signal analysis. OUTVAR is the small-
TEXT: H signal output variable and INSRC is the small-signal input
TEXT: H source. If this line is included, SPICE computes the dc
TEXT: H small-signal value of the transfer function (output/input),
TEXT: H input resistance, and output resistance. For the first
TEXT: H example, SPICE would compute the ratio of V(5, 3) to VIN,
TEXT: H the small-signal input resistance at VIN, and the small-
TEXT: H signal output resistance measured across nodes 5 and 3.
TEXT: H
TEXT: H
SUBJECT: .TRAN
TITLE: .TRAN: Transient Analysis
TEXT: H
TEXT: H _4._3._9. ._T_R_A_N: _T_r_a_n_s_i_e_n_t _A_n_a_l_y_s_i_s
TEXT: H
TEXT: H _G_e_n_e_r_a_l _f_o_r_m:
TEXT: H
TEXT: H .TRAN TSTEP TSTOP <TSTART <TMAX>>
TEXT: H
TEXT: H
TEXT: H _E_x_a_m_p_l_e_s:
TEXT: H
TEXT: H .TRAN 1NS 100NS
TEXT: H .TRAN 1NS 1000NS 500NS
TEXT: H .TRAN 10NS 1US
TEXT: H
TEXT: H
TEXT: H
TEXT: H TSTEP is the printing or plotting increment for line-
TEXT: H printer output. For use with the post-processor, TSTEP is
TEXT: H the suggested computing increment. TSTOP is the final time,
TEXT: H and TSTART is the initial time. If TSTART is omitted, it is
TEXT: H assumed to be zero. The transient analysis always begins at
TEXT: H time zero. In the interval <zero, TSTART>, the circuit is
TEXT: H analyzed (to reach a steady state), but no outputs are
TEXT: H stored. In the interval <TSTART, TSTOP>, the circuit is
TEXT: H analyzed and outputs are stored. TMAX is the maximum step-
TEXT: H size that SPICE uses; for default, the program chooses
TEXT: H either TSTEP or (TSTOP-TSTART)/50.0, whichever is smaller.
TEXT: H TMAX is useful when one wishes to guarantee a computing
TEXT: H interval which is smaller than the printer increment, TSTEP.
TEXT: H
TEXT: H UIC (use initial conditions) is an optional keyword
TEXT: H which indicates that the user does not want SPICE to solve
TEXT: H for the quiescent operating point before beginning the tran-
TEXT: H sient analysis. If this keyword is specified, SPICE uses
TEXT: H the values specified using IC=... on the various elements as
TEXT: H the initial transient condition and proceeds with the
TEXT: H analysis. If the .IC control line has been specified, then
TEXT: H the node voltages on the .IC line are used to compute the
TEXT: H initial conditions for the devices. Look at the description
TEXT: H on the .IC control line for its interpretation when UIC is
TEXT: H not specified.
TEXT: H
SUBJECT: BATCH OUTPUT
TITLE: BATCH OUTPUT
TEXT: H
TEXT: H _4._4. _B_A_T_C_H _O_U_T_P_U_T
TEXT: H
TEXT: H
SUBTOPIC: NGSPICE:.SAVE Lines
SUBTOPIC: NGSPICE:.PRINT Lines
SUBTOPIC: NGSPICE:.PLOT Lines
SUBTOPIC: NGSPICE:.FOUR
SUBJECT: .SAVE Lines
TITLE: .SAVE Lines
TEXT: H
TEXT: H _4._4._1. ._S_A_V_E _L_i_n_e_s
TEXT: H
TEXT: H _G_e_n_e_r_a_l _f_o_r_m:
TEXT: H
TEXT: H .SAVE _v_e_c_t_o_r _v_e_c_t_o_r _v_e_c_t_o_r ...
TEXT: H
TEXT: H
TEXT: H _E_x_a_m_p_l_e_s:
TEXT: H
TEXT: H .SAVE i(vin) input output
TEXT: H .SAVE @m1[id]
TEXT: H
TEXT: H
TEXT: H
TEXT: H The vectors listed on the .SAVE line are recorded in
TEXT: H the rawfile for use later with spice3 or nutmeg (nutmeg is
TEXT: H just the data-analysis half of spice3, without the ability
TEXT: H to simulate). The standard vector names are accepted. If
TEXT: H no .SAVE line is given, then the default set of vectors are
TEXT: H saved (node voltages and voltage source branch currents).
TEXT: H If .SAVE lines are given, only those vectors specified are
TEXT: H saved. For more discussion on internal device data, see
TEXT: H Appendix B. See also the section on the interactive command
TEXT: H interpretor for information on how to use the rawfile.
TEXT: H
SUBJECT: .PRINT Lines
TITLE: .PRINT Lines
TEXT: H
TEXT: H _4._4._2. ._P_R_I_N_T _L_i_n_e_s
TEXT: H
TEXT: H _G_e_n_e_r_a_l _f_o_r_m:
TEXT: H
TEXT: H .PRINT PRTYPE OV1 <OV2 ... OV8>
TEXT: H
TEXT: H
TEXT: H _E_x_a_m_p_l_e_s:
TEXT: H
TEXT: H .PRINT TRAN V(4) I(VIN)
TEXT: H .PRINT DC V(2) I(VSRC) V(23, 17)
TEXT: H .PRINT AC VM(4, 2) VR(7) VP(8, 3)
TEXT: H
TEXT: H
TEXT: H The Print line defines the contents of a tabular list-
TEXT: H ing of one to eight output variables. PRTYPE is the type of
TEXT: H the analysis (DC, AC, TRAN, NOISE, or DISTO) for which the
TEXT: H specified outputs are desired. The form for voltage or
TEXT: H current output variables is the same as given in the previ-
TEXT: H ous section for the print command; Spice2 restricts the out-
TEXT: H put variable to the following forms (though this restriction
TEXT: H is not enforced by Spice3):
TEXT: H
TEXT: H
TEXT: H V(N1<,N2>)
TEXT: H specifies the voltage difference between nodes N1
TEXT: H and N2. If N2 (and the preceding comma) is omit-
TEXT: H ted, ground (0) is assumed. See the print command
TEXT: H in the previous section for more details. For
TEXT: H compatibility with spice2, the following five
TEXT: H additional values can be accessed for the ac
TEXT: H analysis by replacing the "V" in V(N1,N2) with:
TEXT: H
TEXT: H
TEXT: H VR - real part
TEXT: H VI - imaginary part
TEXT: H VM - magnitude
TEXT: H VP - phase
TEXT: H VDB - 20 log10(magnitude)
TEXT: H
TEXT: H
TEXT: H
TEXT: H I(VXXXXXXX)
TEXT: H specifies the current flowing in the independent
TEXT: H voltage source named VXXXXXXX. Positive current
TEXT: H flows from the positive node, through the source,
TEXT: H to the negative node. For the ac analysis, the
TEXT: H corresponding replacements for the letter I may be
TEXT: H made in the same way as described for voltage out-
TEXT: H puts.
TEXT: H
TEXT: H
TEXT: H Output variables for the noise and distortion analyses
TEXT: H have a different general form from that of the other ana-
TEXT: H lyses.
TEXT: H
TEXT: H There is no limit on the number of .PRINT lines for
TEXT: H each type of analysis.
TEXT: H
TEXT: H
SUBJECT: .PLOT Lines
TITLE: .PLOT Lines
TEXT: H
TEXT: H _4._4._3. ._P_L_O_T _L_i_n_e_s
TEXT: H
TEXT: H _G_e_n_e_r_a_l _f_o_r_m:
TEXT: H
TEXT: H .PLOT PLTYPE OV1 <(PLO1, PHI1)> <OV2 <(PLO2, PHI2)> ... OV8>
TEXT: H
TEXT: H
TEXT: H _E_x_a_m_p_l_e_s:
TEXT: H
TEXT: H .PLOT DC V(4) V(5) V(1)
TEXT: H .PLOT TRAN V(17, 5) (2, 5) I(VIN) V(17) (1, 9)
TEXT: H .PLOT AC VM(5) VM(31, 24) VDB(5) VP(5)
TEXT: H .PLOT DISTO HD2 HD3(R) SIM2
TEXT: H .PLOT TRAN V(5, 3) V(4) (0, 5) V(7) (0, 10)
TEXT: H
TEXT: H
TEXT: H The Plot line defines the contents of one plot of
TEXT: H from one to eight output variables. PLTYPE is the type
TEXT: H of analysis (DC, AC, TRAN, NOISE, or DISTO) for which
TEXT: H the specified outputs are desired. The syntax for the
TEXT: H OVI is identical to that for the .PRINT line and for the
TEXT: H plot command in the interactive mode.
TEXT: H
TEXT: H
TEXT: H The overlap of two or more traces on any plot is indi-
TEXT: H cated by the letter X.
TEXT: H
TEXT: H When more than one output variable appears on the same
TEXT: H plot, the first variable specified is printed as well as
TEXT: H plotted. If a printout of all variables is desired, then a
TEXT: H companion .PRINT line should be included.
TEXT: H
TEXT: H There is no limit on the number of .PLOT lines speci-
TEXT: H fied for each type of analysis.
TEXT: H
TEXT: H
SUBJECT: .FOUR
TITLE: .FOUR: Fourier Analysis of Transient Analysis Output
TEXT: H
TEXT: H _4._4._4. ._F_O_U_R: _F_o_u_r_i_e_r _A_n_a_l_y_s_i_s _o_f _T_r_a_n_s_i_e_n_t _A_n_a_l_y_s_i_s _O_u_t-
TEXT: H _p_u_t
TEXT: H
TEXT: H _G_e_n_e_r_a_l _f_o_r_m:
TEXT: H
TEXT: H .FOUR FREQ OV1 <OV2 OV3 ...>
TEXT: H
TEXT: H
TEXT: H _E_x_a_m_p_l_e_s:
TEXT: H
TEXT: H .FOUR 100K V(5)
TEXT: H
TEXT: H
TEXT: H The Four (or Fourier) line controls whether SPICE
TEXT: H performs a Fourier analysis as a part of the transient
TEXT: H analysis. FREQ is the fundamental frequency, and OV1,
TEXT: H desired. The Fourier analysis is performed over the in-
TEXT: H terval <TSTOP-period, TSTOP>, where TSTOP is the final
TEXT: H time specified for the transient analysis, and period is
TEXT: H one period of the fundamental frequency. The dc com-
TEXT: H ponent and the first nine harmonics are determined. For
TEXT: H maximum accuracy, TMAX (see the .TRAN line) should be
TEXT: H set to period/100.0 (or less for very high-Q circuits).
TEXT: H
SUBJECT: INTERACTIVE INTERPRETER
TITLE: INTERACTIVE INTERPRETER
TEXT: H
TEXT: H _5. _I_N_T_E_R_A_C_T_I_V_E _I_N_T_E_R_P_R_E_T_E_R
TEXT: H
TEXT: H Spice3 consists of a simulator and a front-end for data
TEXT: H analysis and plotting. The front-end may be run as a
TEXT: H separate "stand-alone" program under the name Nutmeg.
TEXT: H
TEXT: H _N_u_t_m_e_g will read in the "raw" data output file created
TEXT: H by spice -r or with the write command in an interactive
TEXT: H Spice3 session. Nutmeg or interactive Spice3 can plot data
TEXT: H from a simulation on a graphics terminal or a workstation
TEXT: H display. Most of the commands available in the interactive
TEXT: H Spice3 front end are available in nutmeg; where this is not
TEXT: H the case, Spice-only commands have been marked with an
TEXT: H asterisk ("*"). Note that the raw output file is different
TEXT: H from the data that Spice2 writes to the standard output,
TEXT: H which may also be produced by spice3 with the "-b" command
TEXT: H line option.
TEXT: H
TEXT: H Spice and Nutmeg use the X Window System for plotting
TEXT: H if they find the environment variable DISPLAY. Otherwise, a
TEXT: H graphics-terminal independent interface (MFB) is used. If
TEXT: H you are using X on a workstation, the DISPLAY variable
TEXT: H should already be set; if you want to display graphics on a
TEXT: H system different from the one you are running Spice3 or Nut-
TEXT: H meg on, DISPLAY should be of the form "_m_a_c_h_i_n_e:0.0". See
TEXT: H the appropriate documentation on the X Window Sytem for more
TEXT: H details.
TEXT: H
TEXT: H
TEXT: H _C_o_m_m_a_n_d _S_y_n_o_p_s_i_s
TEXT: H
TEXT: H spice [ -n ] [ -t term ] [ -r rawfile] [ -b ] [ -i ] [ input file ... ]
TEXT: H
TEXT: H nutmeg [ - ] [ -n ] [ -t term ] [ datafile ... ]
TEXT: H
TEXT: H
TEXT: H
TEXT: H
TEXT: H Options are:
TEXT: H
TEXT: H - Don't try to load the default data file
TEXT: H ("rawspice.raw") if no other files are given. Nutmeg
TEXT: H only.
TEXT: H
TEXT: H -n (or -N)
TEXT: H Don't try to source the file ".spiceinit" upon startup.
TEXT: H Normally spice and nutmeg try to find the file in the
TEXT: H current directory, and if it is not found then in the
TEXT: H user's home directory.
TEXT: H
TEXT: H -t term (or -T term)
TEXT: H The program is being run on a terminal with _m_f_b name
TEXT: H term.
TEXT: H
TEXT: H -b (or -B)
TEXT: H Run in batch mode. Spice3 reads the default input
TEXT: H source (e.g. keyboard) or reads the given input file
TEXT: H and performs the analyses specified; output is either
TEXT: H Spice2-like line-printer plots ("ascii plots") or a
TEXT: H spice rawfile. See the following section for details.
TEXT: H Note that if the input source is not a terminal (e.g.
TEXT: H using the IO redirection notation of "<") Spice3 de-
TEXT: H faults to batch mode (-i overrides). This option is
TEXT: H valid for Spice3 only.
TEXT: H
TEXT: H
TEXT: H
TEXT: H -s (or -S)
TEXT: H Run in server mode. This is like batch mode, except
TEXT: H that a temporary rawfile is used and then written to
TEXT: H the standard output, preceded by a line with a single
TEXT: H "@", after the simulation is done. This mode is used
TEXT: H by the spice daemon. This option is valid for Spice3
TEXT: H only.
TEXT: H
TEXT: H
TEXT: H
TEXT: H -i (or -I)
TEXT: H Run in interactive mode. This is useful if the stan-
TEXT: H dard input is not a terminal but interactive mode is
TEXT: H desired. Command completion is not available unless
TEXT: H the standard input is a terminal, however. This option
TEXT: H is valid for Spice3 only.
TEXT: H
TEXT: H
TEXT: H
TEXT: H -r _r_a_w_f_i_l_e (or -P _r_a_w_f_i_l_e)
TEXT: H Use _r_a_w_f_i_l_e as the default file into which the results
TEXT: H of the simulation are saved. This option is valid for
TEXT: H Spice3 only.
TEXT: H
TEXT: H
TEXT: H Further arguments to spice are taken to be Spice3 input
TEXT: H files, which are read and saved (if running in batch mode
TEXT: H then they are run immediately). Spice3 accepts most Spice2
TEXT: H input file, and output ascii plots, fourier analyses, and
TEXT: H node printouts as specified in .plot, .four, and .print
TEXT: H cards. If an out parameter is given on a .width card, the
TEXT: H effect is the same as set width = .... Since Spice3 ascii
TEXT: H plots do not use multiple ranges, however, if vectors
TEXT: H together on a .plot card have different ranges they are not
TEXT: H provide as much information as they would in Spice2. The
TEXT: H output of Spice3 is also much less verbose than Spice2, in
TEXT: H that the only data printed is that requested by the above
TEXT: H cards.
TEXT: H
TEXT: H For nutmeg, further arguments are taken to be data
TEXT: H files in binary or ascii format (see sconvert(1)) which are
TEXT: H loaded into nutmeg. If the file is in binary format, it may
TEXT: H be only partially completed (useful for examining Spice2
TEXT: H output before the simulation is finished). One file may
TEXT: H contain any number of data sets from different analyses.
SUBTOPIC: NGSPICE:EXPRESSIONS FUNCTIONS AND CONSTANTS
SUBTOPIC: NGSPICE:COMMAND INTERPRETATION
SUBTOPIC: NGSPICE:COMMANDS
SUBTOPIC: NGSPICE:CONTROL STRUCTURES
SUBTOPIC: NGSPICE:VARIABLES
SUBTOPIC: NGSPICE:MISCELLANEOUS
SUBTOPIC: NGSPICE:BUGS
SUBJECT: EXPRESSIONS FUNCTIONS AND CONSTANTS
TITLE: EXPRESSIONS, FUNCTIONS, AND CONSTANTS
TEXT: H
TEXT: H _5._1. _E_X_P_R_E_S_S_I_O_N_S, _F_U_N_C_T_I_O_N_S, _A_N_D _C_O_N_S_T_A_N_T_S
TEXT: H
TEXT: H Spice and Nutmeg data is in the form of vectors: time,
TEXT: H voltage, etc. Each vector has a type, and vectors can be
TEXT: H operated on and combined algebraicly in ways consistent with
TEXT: H their types. Vectors are normally created when a data file
TEXT: H is read in (see the _l_o_a_d command below), and when the ini-
TEXT: H tial datafile is loaded. They can also be created with the
TEXT: H _l_e_t command.
TEXT: H
TEXT: H
TEXT: H An expression is an algebraic formula involving vectors
TEXT: H and scalars (a scalar is a vector of length 1) and the fol-
TEXT: H lowing operations:
TEXT: H
TEXT: H + - * / ^ %
TEXT: H
TEXT: H
TEXT: H % is the modulo operator, and the comma operator has two
TEXT: H meanings: if it is present in the argument list of a user-
TEXT: H definable function, it serves to separate the arguments.
TEXT: H Otherwise, the term x , y is synonymous with x + j(y).
TEXT: H
TEXT: H
TEXT: H
TEXT: H Also available are the logical operations & (and), |
TEXT: H (or), ! (not), and the relational operations <, >, >=, <=,
TEXT: H =, and <> (not equal). If used in an algebraic expression
TEXT: H they work like they would in C, producing values of 0 or 1.
TEXT: H The relational operators have the following synonyms:
TEXT: H
TEXT: H
TEXT: H gt >
TEXT: H lt <
TEXT: H ge >=
TEXT: H le <=
TEXT: H ne <>
TEXT: H eq =
TEXT: H and &
TEXT: H or |
TEXT: H not !
TEXT: H
TEXT: H
TEXT: H These are useful when < and > might be confused with IO
TEXT: H redirection (which is almost always).
TEXT: H
TEXT: H
TEXT: H
TEXT: H The following functions are available:
TEXT: H
TEXT: H mag(vector) The magnitude of vector
TEXT: H ph(vector) The phase of vector
TEXT: H j(vector) _i (sqrt(-1)) times vector
TEXT: H real(vector) The real component of vector
TEXT: H imag(vector) The imaginary part of vector
TEXT: H db(vector) 20 log10(mag(vector))
TEXT: H log(vector) The logarithm (base 10) of vector
TEXT: H ln(vector) The natural logarithm (base e) of vector
TEXT: H exp(vector) e to the vector power
TEXT: H abs(vector) The absolute value of vector.
TEXT: H sqrt(vector) The square root of vector.
TEXT: H sin(vector) The sine of vector.
TEXT: H cos(vector) The cosine of vector.
TEXT: H tan(vector) The tangent of vector.
TEXT: H atan(vector) The inverse tangent of vector.
TEXT: H norm(vector) The vector normalized to 1 (i.e, the
TEXT: H largest magnitude of any component is
TEXT: H 1).
TEXT: H rnd(vector) A vector with each component a random
TEXT: H integer between 0 and the absolute value
TEXT: H of the vectors's corresponding com-
TEXT: H ponent.
TEXT: H mean(vector) The result is a scalar (a length 1 vec-
TEXT: H tor) that is the mean of the elements of
TEXT: H vector.
TEXT: H vector(number) The result is a vector of length number,
TEXT: H with elements 0, 1, ... number - 1. If
TEXT: H number is a vector then just the first
TEXT: H element is taken, and if it isn't an in-
TEXT: H teger then the floor of the magnitude is
TEXT: H used.
TEXT: H length(vector) The length of vector.
TEXT: H interpolate(plot.vector) The result of interpolating the named
TEXT: H vector onto the scale of the current
TEXT: H plot. This function uses the variable
TEXT: H polydegree to determine the degree of
TEXT: H interpolation.
TEXT: H deriv(vector) Calculates the derivative of the given
TEXT: H vector. This uses numeric differentia-
TEXT: H tion by interpolating a polynomial and
TEXT: H may not produce satisfactory results
TEXT: H (particularly with iterated differentia-
TEXT: H tion). The implementation only cacu-
TEXT: H lates the dirivative with respect to the
TEXT: H real componant of that vector's scale.
TEXT: H
TEXT: H
TEXT: H A vector may be either the name of a vector already
TEXT: H defined or a floating-point number (a scalar). A number may
TEXT: H be written in any format acceptable to SPICE, such as
TEXT: H 14.6Meg or -1.231e-4. Note that you can either use scien-
TEXT: H tific notation or one of the abbreviations like _M_E_G or _G,
TEXT: H but not both. As with SPICE, a number may have trailing
TEXT: H alphabetic characters after it.
TEXT: H
TEXT: H The notation expr [num] denotes the num'th element of
TEXT: H expr. For multi-dimensional vectors, a vector of one less
TEXT: H dimension is returned. Also for multi-dimensional vectors,
TEXT: H the notation expr[m][n] will return the _nth element of the
TEXT: H mth subvector. To get a subrange of a vector, use the form
TEXT: H expr[lower, upper].
TEXT: H
TEXT: H To reference vectors in a plot that is not the _c_u_r_r_e_n_t
TEXT: H _p_l_o_t (see the setplot command, below), the notation
TEXT: H plotname.vecname can be used.
TEXT: H
TEXT: H
TEXT: H Either a plotname or a vector name may be the wildcard
TEXT: H all. If the plotname is all, matching vectors from all
TEXT: H plots are specified, and if the vector name is all, all vec-
TEXT: H tors in the specified plots are referenced. Note that you
TEXT: H may not use binary operations on expressions involving wild-
TEXT: H cards - it is not obvious what all + all should denote, for
TEXT: H instance. Thus some (contrived) examples of expressions
TEXT: H are:
TEXT: H
TEXT: H cos(TIME) + db(v(3))
TEXT: H sin(cos(log([1 2 3 4 5 6 7 8 9 10])))
TEXT: H TIME * rnd(v(9)) - 15 * cos(vin#branch) ^ [7.9e5 8]
TEXT: H not ((ac3.FREQ[32] & tran1.TIME[10]) gt 3)
TEXT: H
TEXT: H
TEXT: H
TEXT: H Vector names in spice may have a name such as
TEXT: H @name[param], where name is either the name of a device
TEXT: H instance or model. This denotes the value of the param
TEXT: H parameter of the device or model. See Appendix B for
TEXT: H details of what parameters are available. The value is a
TEXT: H vector of length 1. This function is also available with
TEXT: H the show command, and is available with variables for con-
TEXT: H venience for command scripts.
TEXT: H
TEXT: H
TEXT: H There are a number of pre-defined constants in nutmeg.
TEXT: H They are:
TEXT: H
TEXT: H pi J (3.14159...)
TEXT: H e The base of natural logarithms (2.71828...)
TEXT: H c The speed of light (299,792,500 m/sec)
TEXT: H i The square root of -1
TEXT: H o
TEXT: H kelvin Absolute 0 in Centigrade (-273.15 C)
TEXT: H echarge The charge on an electron (1.6021918e-19 C)
TEXT: H boltz Boltzman's constant (1.3806226e-23)
TEXT: H planck Planck's constant (h = 6.626200e-34)
TEXT: H
TEXT: H
TEXT: H These are all in MKS units. If you have another vari-
TEXT: H able with a name that conflicts with one of these then it
TEXT: H takes precedence.
TEXT: H
SUBJECT: COMMAND INTERPRETATION
TITLE: COMMAND INTERPRETATION
TEXT: H
TEXT: H _5._2. _C_O_M_M_A_N_D _I_N_T_E_R_P_R_E_T_A_T_I_O_N
TEXT: H
TEXT: H If a word is typed as a command, and there is no
TEXT: H built-in command with that name, the directories in the
TEXT: H _s_o_u_r_c_e_p_a_t_h list are searched in order for the file. If it
TEXT: H is found, it is read in as a command file (as if it were
TEXT: H sourced). Before it is read, however, the variables _a_r_g_c
TEXT: H and _a_r_g_v are set to the number of words following the
TEXT: H filename on the command line, and a list of those words
TEXT: H respectively. After the file is finished, these variables
TEXT: H are unset. Note that if a command file calls another, it
TEXT: H must save its _a_r_g_v and _a_r_g_c since they are altered. Also,
TEXT: H command files may not be re-entrant since there are no local
TEXT: H variables. (Of course, the procedures may explicitly mani-
TEXT: H pulate a stack...) This way one can write scripts analogous
TEXT: H to shell scripts for nutmeg and Spice3.
TEXT: H
TEXT: H Note that for the script to work with Spice3, it must
TEXT: H begin with a blank line (or whatever else, since it is
TEXT: H thrown away) and then a line with .control on it. This is
TEXT: H an unfortunate result of the source command being used for
TEXT: H both circuit input and command file execution. Note also
TEXT: H that this allows the user to merely type the name of a cir-
TEXT: H cuit file as a command and it is automatically run. The
TEXT: H commands are executed immediately, without running any ana-
TEXT: H lyses that may be spicified in the circuit (to execute the
TEXT: H analyses before the script executes, include a "run" command
TEXT: H in the script).
TEXT: H
TEXT: H There are various command scripts installed in
TEXT: H /_u_s_r/_l_o_c_a_l/_l_i_b/_s_p_i_c_e/_s_c_r_i_p_t_s (or whatever the path is on
TEXT: H your machine), and the default _s_o_u_r_c_e_p_a_t_h includes this
TEXT: H directory, so you can use these command files (almost) like
TEXT: H builtin commands.
SUBJECT: COMMANDS
TITLE: COMMANDS
TEXT: H
TEXT: H _5._3. _C_O_M_M_A_N_D_S
TEXT: H
TEXT: H
SUBTOPIC: NGSPICE:Ac
SUBTOPIC: NGSPICE:Alias
SUBTOPIC: NGSPICE:Alter
SUBTOPIC: NGSPICE:Asciiplot
SUBTOPIC: NGSPICE:Aspice
SUBTOPIC: NGSPICE:Bug
SUBTOPIC: NGSPICE:Cd
SUBTOPIC: NGSPICE:Destroy
SUBTOPIC: NGSPICE:Dc
SUBTOPIC: NGSPICE:Define
SUBTOPIC: NGSPICE:Delete
SUBTOPIC: NGSPICE:Diff
SUBTOPIC: NGSPICE:Display
SUBTOPIC: NGSPICE:Echo
SUBTOPIC: NGSPICE:Edit
SUBTOPIC: NGSPICE:Fourier
SUBTOPIC: NGSPICE:Hardcopy
SUBTOPIC: NGSPICE:Help
SUBTOPIC: NGSPICE:History
SUBTOPIC: NGSPICE:Iplot
SUBTOPIC: NGSPICE:Jobs
SUBTOPIC: NGSPICE:Let
SUBTOPIC: NGSPICE:Linearize
SUBTOPIC: NGSPICE:Listing
SUBTOPIC: NGSPICE:Load
SUBTOPIC: NGSPICE:Op
SUBTOPIC: NGSPICE:Plot
SUBTOPIC: NGSPICE:Print
SUBTOPIC: NGSPICE:Quit
SUBTOPIC: NGSPICE:Rehash
SUBTOPIC: NGSPICE:Reset
SUBTOPIC: NGSPICE:Reshape
SUBTOPIC: NGSPICE:Resume
SUBTOPIC: NGSPICE:Rspice
SUBTOPIC: NGSPICE:Run
SUBTOPIC: NGSPICE:Rusage
SUBTOPIC: NGSPICE:Save
SUBTOPIC: NGSPICE:Sens
SUBTOPIC: NGSPICE:Set
SUBTOPIC: NGSPICE:Setcirc
SUBTOPIC: NGSPICE:Setplot
SUBTOPIC: NGSPICE:Settype
SUBTOPIC: NGSPICE:Shell
SUBTOPIC: NGSPICE:Shift
SUBTOPIC: NGSPICE:Show
SUBTOPIC: NGSPICE:Showmod
SUBTOPIC: NGSPICE:Source
SUBTOPIC: NGSPICE:Status
SUBTOPIC: NGSPICE:Step
SUBTOPIC: NGSPICE:Stop
SUBTOPIC: NGSPICE:Tf
SUBTOPIC: NGSPICE:Trace
SUBTOPIC: NGSPICE:Tran
SUBTOPIC: NGSPICE:Transpose
SUBTOPIC: NGSPICE:Unalias
SUBTOPIC: NGSPICE:Undefine
SUBTOPIC: NGSPICE:Unset
SUBTOPIC: NGSPICE:Version
SUBTOPIC: NGSPICE:Where
SUBTOPIC: NGSPICE:Write
SUBTOPIC: NGSPICE:Xgraph
SUBJECT: Ac
TITLE: Ac*: Perform an AC, small-signal frequency response analysis
TEXT: H
TEXT: H _5._3._1. _A_c*: _P_e_r_f_o_r_m _a_n _A_C, _s_m_a_l_l-_s_i_g_n_a_l _f_r_e_q_u_e_n_c_y _r_e_s_p_o_n_s_e
TEXT: H _a_n_a_l_y_s_i_s
TEXT: H
TEXT: H _G_e_n_e_r_a_l _F_o_r_m
TEXT: H
TEXT: H ac ( DEC | OCT | LIN ) _N _F_s_t_a_r_t _F_s_t_o_p
TEXT: H
TEXT: H
TEXT: H Do an ac analysis. See the previous sections of
TEXT: H this manual for more details.
TEXT: H
TEXT: H
SUBJECT: Alias
TITLE: Alias: Create an alias for a command
TEXT: H
TEXT: H _5._3._2. _A_l_i_a_s: _C_r_e_a_t_e _a_n _a_l_i_a_s _f_o_r _a _c_o_m_m_a_n_d
TEXT: H
TEXT: H _G_e_n_e_r_a_l _F_o_r_m
TEXT: H
TEXT: H alias [word] [text ...]
TEXT: H
TEXT: H
TEXT: H Causes word to be aliased to text. History substi-
TEXT: H tutions may be used, as in C-shell aliases.
TEXT: H
TEXT: H
SUBJECT: Alter
TITLE: Alter*: Change a device or model parameter
TEXT: H
TEXT: H _5._3._3. _A_l_t_e_r*: _C_h_a_n_g_e _a _d_e_v_i_c_e _o_r _m_o_d_e_l _p_a_r_a_m_e_t_e_r
TEXT: H
TEXT: H _G_e_n_e_r_a_l _F_o_r_m
TEXT: H
TEXT: H alter _d_e_v_i_c_e _v_a_l_u_e
TEXT: H alter _d_e_v_i_c_e _p_a_r_a_m_e_t_e_r _v_a_l_u_e [ _p_a_r_a_m_e_t_e_r _v_a_l_u_e ]
TEXT: H
TEXT: H
TEXT: H Alter changes the value for a device or a specified
TEXT: H parameter of a device or model. The first form is used
TEXT: H by simple devices which have one principal value (resis-
TEXT: H tors, capacitors, etc.) where the second form is for
TEXT: H more complex devices (bjt's, etc.). Model parameters
TEXT: H can be changed with the second form if the name contains
TEXT: H a "#".
TEXT: H
TEXT: H For specifying vectors as values, start the vector
TEXT: H with "[", followed by the values in the vector, and end
TEXT: H with "]". Be sure to place a space between each of the
TEXT: H values and before and after the "[" and "]".
TEXT: H
TEXT: H
SUBJECT: Asciiplot
TITLE: Asciiplot: Plot values using old-style character plots
TEXT: H
TEXT: H _5._3._4. _A_s_c_i_i_p_l_o_t: _P_l_o_t _v_a_l_u_e_s _u_s_i_n_g _o_l_d-_s_t_y_l_e _c_h_a_r_a_c_t_e_r
TEXT: H _p_l_o_t_s
TEXT: H
TEXT: H _G_e_n_e_r_a_l _F_o_r_m
TEXT: H
TEXT: H asciiplot _p_l_o_t_a_r_g_s
TEXT: H
TEXT: H
TEXT: H Produce a line printer plot of the vectors. The
TEXT: H plot is sent to the standard output, so you can put it
TEXT: H into a file with _a_s_c_i_i_p_l_o_t _a_r_g_s ... > _f_i_l_e. The set op-
TEXT: H tions width, height, and nobreak determine the width and
TEXT: H height of the plot, and whether there are page breaks,
TEXT: H respectively. Note that you will have problems if you
TEXT: H try to asciiplot something with an X-scale that isn't
TEXT: H monotonic (i.e, something like _s_i_n(_T_I_M_E) ), because as-
TEXT: H ciiplot uses a simple-minded linear interpolation.
TEXT: H
TEXT: H
SUBJECT: Aspice
TITLE: Aspice: Asynchronous spice run
TEXT: H
TEXT: H _5._3._5. _A_s_p_i_c_e: _A_s_y_n_c_h_r_o_n_o_u_s _s_p_i_c_e _r_u_n
TEXT: H
TEXT: H _G_e_n_e_r_a_l _F_o_r_m
TEXT: H
TEXT: H aspice input-file [output-file]
TEXT: H
TEXT: H
TEXT: H Start a SPICE-3 run, and when it is finished load
TEXT: H the resulting data. The raw data is kept in a temporary
TEXT: H file. If _o_u_t_p_u_t-_f_i_l_e is specified then the diagnostic
TEXT: H output is directed into that file, otherwise it is
TEXT: H thrown away.
TEXT: H
TEXT: H
SUBJECT: Bug
TITLE: Bug: Mail a bug report
TEXT: H
TEXT: H _5._3._6. _B_u_g: _M_a_i_l _a _b_u_g _r_e_p_o_r_t
TEXT: H
TEXT: H _G_e_n_e_r_a_l _F_o_r_m
TEXT: H
TEXT: H bug
TEXT: H
TEXT: H
TEXT: H Send a bug report. Please include a short summary
TEXT: H of the problem, the version number and name of the
TEXT: H operating system that you are running, the version of
TEXT: H Spice that you are running, and the relevant spice input
TEXT: H file. (If you have defined BUGADDR, the mail is
TEXT: H delivered to there.)
TEXT: H
TEXT: H
SUBJECT: Cd
TITLE: Cd: Change directory
TEXT: H
TEXT: H _5._3._7. _C_d: _C_h_a_n_g_e _d_i_r_e_c_t_o_r_y
TEXT: H
TEXT: H _G_e_n_e_r_a_l _F_o_r_m
TEXT: H
TEXT: H cd [directory]
TEXT: H
TEXT: H
TEXT: H Change the current working directory to directory,
TEXT: H or to the user's home directory if none is given.
TEXT: H
TEXT: H
SUBJECT: Destroy
TITLE: Destroy: Delete a data set
TEXT: H
TEXT: H _5._3._8. _D_e_s_t_r_o_y: _D_e_l_e_t_e _a _d_a_t_a _s_e_t
TEXT: H
TEXT: H _G_e_n_e_r_a_l _F_o_r_m
TEXT: H
TEXT: H destroy [_p_l_o_t_n_a_m_e_s | all]
TEXT: H
TEXT: H
TEXT: H Release the memory holding the data for the speci-
TEXT: H fied runs.
TEXT: H
TEXT: H
SUBJECT: Dc
TITLE: Dc*: Perform a DC-sweep analysis
TEXT: H
TEXT: H _5._3._9. _D_c*: _P_e_r_f_o_r_m _a _D_C-_s_w_e_e_p _a_n_a_l_y_s_i_s
TEXT: H
TEXT: H _G_e_n_e_r_a_l _F_o_r_m
TEXT: H
TEXT: H dc _S_o_u_r_c_e-_N_a_m_e _V_s_t_a_r_t _V_s_t_o_p _V_i_n_c_r [ _S_o_u_r_c_e_2 _V_s_t_a_r_t_2 _V_s_t_o_p_2 _V_i_n_c_r_2 ]
TEXT: H
TEXT: H
TEXT: H Do a dc transfer curve analysis. See the previous
TEXT: H sections of this manual for more details.
TEXT: H
TEXT: H
SUBJECT: Define
TITLE: Define: Define a function
TEXT: H
TEXT: H _5._3._1_0. _D_e_f_i_n_e: _D_e_f_i_n_e _a _f_u_n_c_t_i_o_n
TEXT: H
TEXT: H _G_e_n_e_r_a_l _F_o_r_m
TEXT: H
TEXT: H define function(arg1, arg2, ...) expression
TEXT: H
TEXT: H
TEXT: H Define the _u_s_e_r-_d_e_f_i_n_a_b_l_e _f_u_n_c_t_i_o_n with the name
TEXT: H _f_u_n_c_t_i_o_n and arguments _a_r_g_1, _a_r_g_2, ... to be _e_x_p_r_e_s_s_i_o_n,
TEXT: H which may involve the arguments. When the function is
TEXT: H later used, the arguments it is given are substituted
TEXT: H for the formal arguments when it is parsed. If _e_x_p_r_e_s-
TEXT: H _s_i_o_n is not present, any definition for _f_u_n_c_t_i_o_n is
TEXT: H printed, and if there are no arguments to _d_e_f_i_n_e then
TEXT: H all currently active definitions are printed. Note that
TEXT: H you may have different functions defined with the same
TEXT: H name but different arities.
TEXT: H
TEXT: H
TEXT: H
TEXT: H Some useful definitions are:
TEXT: H
TEXT: H define max(x,y) (x > y) * x + (x <= y) * y
TEXT: H define min(x,y) (x < y) * x + (x >= y) * y
TEXT: H
TEXT: H
TEXT: H
SUBJECT: Delete
TITLE: Delete*: Remove a trace or breakpoint
TEXT: H
TEXT: H _5._3._1_1. _D_e_l_e_t_e*: _R_e_m_o_v_e _a _t_r_a_c_e _o_r _b_r_e_a_k_p_o_i_n_t
TEXT: H
TEXT: H _G_e_n_e_r_a_l _F_o_r_m
TEXT: H
TEXT: H delete [ _d_e_b_u_g-_n_u_m_b_e_r ... ]
TEXT: H
TEXT: H
TEXT: H Delete the specified breakpoints and traces. The
TEXT: H debug numbers are those shown by the status command (un-
TEXT: H less you do status > file, in which case the debug
TEXT: H numbers are not printed).
TEXT: H
TEXT: H
SUBJECT: Diff
TITLE: Diff: Compare vectors
TEXT: H
TEXT: H _5._3._1_2. _D_i_f_f: _C_o_m_p_a_r_e _v_e_c_t_o_r_s
TEXT: H
TEXT: H _G_e_n_e_r_a_l _F_o_r_m
TEXT: H
TEXT: H diff plot1 plot2 [vec ...]
TEXT: H
TEXT: H
TEXT: H Compare all the vectors in the specified _p_l_o_t_s, or
TEXT: H only the named vectors if any are given. There are dif-
TEXT: H ferent vectors in the two plots, or any values in the
TEXT: H vectors differ significantly the difference is reported.
TEXT: H The variable diff_abstol, diff_reltol, and diff_vntol
TEXT: H are used to determine a significant difference.
TEXT: H
TEXT: H
SUBJECT: Display
TITLE: Display: List known vectors and types
TEXT: H
TEXT: H _5._3._1_3. _D_i_s_p_l_a_y: _L_i_s_t _k_n_o_w_n _v_e_c_t_o_r_s _a_n_d _t_y_p_e_s
TEXT: H
TEXT: H _G_e_n_e_r_a_l _F_o_r_m
TEXT: H
TEXT: H display [varname ...]
TEXT: H
TEXT: H
TEXT: H Prints a summary of currently defined vectors, or
TEXT: H of the names specified. The vectors are sorted by name
TEXT: H unless the variable nosort is set. The information
TEXT: H given is the name of the vector, the length, the type of
TEXT: H the vector, and whether it is real or complex data. Ad-
TEXT: H ditionally, one vector is labeled [scale]. When a com-
TEXT: H mand such as _p_l_o_t is given without a _v_s argument, this
TEXT: H scale is used for the X-axis. It is always the first
TEXT: H vector in a rawfile, or the first vector defined in a
TEXT: H new plot. If you undefine the scale (i.e, _l_e_t _T_I_M_E =
TEXT: H []), one of the remaining vectors becomes the new scale
TEXT: H (which is undetermined).
TEXT: H
TEXT: H
SUBJECT: Echo
TITLE: Echo: Print text
TEXT: H
TEXT: H _5._3._1_4. _E_c_h_o: _P_r_i_n_t _t_e_x_t
TEXT: H
TEXT: H _G_e_n_e_r_a_l _F_o_r_m
TEXT: H
TEXT: H echo [text...]
TEXT: H
TEXT: H
TEXT: H Echos the given text to the screen.
TEXT: H
TEXT: H
SUBJECT: Edit
TITLE: Edit*: Edit the current circuit
TEXT: H
TEXT: H _5._3._1_5. _E_d_i_t*: _E_d_i_t _t_h_e _c_u_r_r_e_n_t _c_i_r_c_u_i_t
TEXT: H
TEXT: H _G_e_n_e_r_a_l _F_o_r_m
TEXT: H
TEXT: H edit [ _f_i_l_e ]
TEXT: H
TEXT: H
TEXT: H Print the current Spice3 input file into a file,
TEXT: H call up the editor on that file and allow the user to
TEXT: H modify it, and then read it back in, replacing the ori-
TEXT: H ginal file. If a _f_i_l_e_n_a_m_e is given, then edit that file
TEXT: H and load it, making the circuit the current one.
TEXT: H
TEXT: H
SUBJECT: Fourier
TITLE: Fourier: Perform a fourier transform
TEXT: H
TEXT: H _5._3._1_6. _F_o_u_r_i_e_r: _P_e_r_f_o_r_m _a _f_o_u_r_i_e_r _t_r_a_n_s_f_o_r_m
TEXT: H
TEXT: H _G_e_n_e_r_a_l _F_o_r_m
TEXT: H
TEXT: H fourier fundamental_frequency [value ...]
TEXT: H
TEXT: H
TEXT: H Does a fourier analysis of each of the given
TEXT: H values, using the first 10 multiples of the fundamental
TEXT: H frequency (or the first _n_f_r_e_q_s, if that variable is set
TEXT: H - see below). The output is like that of the .four
TEXT: H Spice3 line. The values may be any valid expression.
TEXT: H The values are interpolated onto a fixed-space grid with
TEXT: H the number of points given by the fourgridsize variable,
TEXT: H or 200 if it is not set. The interpolation is of degree
TEXT: H polydegree if that variable is set, or 1. If polydegree
TEXT: H is 0, then no interpolation is done. This is likely to
TEXT: H give erroneous results if the time scale is not monoton-
TEXT: H ic, though.
TEXT: H
TEXT: H
SUBJECT: Hardcopy
TITLE: Hardcopy: Save a plot to a file for printing
TEXT: H
TEXT: H _5._3._1_7. _H_a_r_d_c_o_p_y: _S_a_v_e _a _p_l_o_t _t_o _a _f_i_l_e _f_o_r _p_r_i_n_t_i_n_g
TEXT: H
TEXT: H _G_e_n_e_r_a_l _F_o_r_m
TEXT: H
TEXT: H hardcopy file _p_l_o_t_a_r_g_s
TEXT: H
TEXT: H
TEXT: H Just like plot, except creates a file called _f_i_l_e
TEXT: H containing the plot. The file is an image in _p_l_o_t(_5)
TEXT: H format, and can be printed by either the plot(1) program
TEXT: H or lpr with the -g flag.
TEXT: H
TEXT: H
SUBJECT: Help
TITLE: Help: Print summaries of Spice3 commands
TEXT: H
TEXT: H _5._3._1_8. _H_e_l_p: _P_r_i_n_t _s_u_m_m_a_r_i_e_s _o_f _S_p_i_c_e_3 _c_o_m_m_a_n_d_s
TEXT: H
TEXT: H _G_e_n_e_r_a_l _F_o_r_m
TEXT: H
TEXT: H help [all] [command ...]
TEXT: H
TEXT: H
TEXT: H Prints help. If the argument all is given, a short
TEXT: H description of everything you could possibly type is
TEXT: H printed. If commands are given, descriptions of those
TEXT: H commands are printed. Otherwise help for only a few ma-
TEXT: H jor commands is printed.
TEXT: H
TEXT: H
SUBJECT: History
TITLE: History: Review previous commands
TEXT: H
TEXT: H _5._3._1_9. _H_i_s_t_o_r_y: _R_e_v_i_e_w _p_r_e_v_i_o_u_s _c_o_m_m_a_n_d_s
TEXT: H
TEXT: H _G_e_n_e_r_a_l _F_o_r_m
TEXT: H
TEXT: H history [number]
TEXT: H
TEXT: H
TEXT: H Print out the history, or the last number commands
TEXT: H typed at the keyboard. _N_o_t_e: in Spice3 version 3a7 and
TEXT: H earlier, all commands (including ones read from files)
TEXT: H were saved.
TEXT: H
TEXT: H
SUBJECT: Iplot
TITLE: Iplot*: Incremental plot
TEXT: H
TEXT: H _5._3._2_0. _I_p_l_o_t*: _I_n_c_r_e_m_e_n_t_a_l _p_l_o_t
TEXT: H
TEXT: H _G_e_n_e_r_a_l _F_o_r_m
TEXT: H
TEXT: H iplot [ node ...]
TEXT: H
TEXT: H
TEXT: H Incrementally plot the values of the nodes while
TEXT: H Spice3 runs. The iplot command can be used with the
TEXT: H where command to find trouble spots in a transient simu-
TEXT: H lation.
TEXT: H
TEXT: H
SUBJECT: Jobs
TITLE: Jobs: List active asynchronous spice runs
TEXT: H
TEXT: H _5._3._2_1. _J_o_b_s: _L_i_s_t _a_c_t_i_v_e _a_s_y_n_c_h_r_o_n_o_u_s _s_p_i_c_e _r_u_n_s
TEXT: H
TEXT: H _G_e_n_e_r_a_l _F_o_r_m
TEXT: H
TEXT: H jobs
TEXT: H
TEXT: H
TEXT: H Report on the asynchronous SPICE-3 jobs currently
TEXT: H running. Nutmeg checks to see if the jobs are finished
TEXT: H every time you execute a command. If it is done then
TEXT: H the data is loaded and becomes available.
TEXT: H
TEXT: H
SUBJECT: Let
TITLE: Let: Assign a value to a vector
TEXT: H
TEXT: H _5._3._2_2. _L_e_t: _A_s_s_i_g_n _a _v_a_l_u_e _t_o _a _v_e_c_t_o_r
TEXT: H
TEXT: H _G_e_n_e_r_a_l _F_o_r_m
TEXT: H
TEXT: H let name = expr
TEXT: H
TEXT: H
TEXT: H Creates a new vector called _n_a_m_e with the value
TEXT: H specified by _e_x_p_r, an expression as described above. If
TEXT: H expr is [] (a zero-length vector) then the vector be-
TEXT: H comes undefined. Individual elements of a vector may be
TEXT: H modified by appending a subscript to name (ex. name[0]).
TEXT: H If there are no arguments, let is the same as display.
TEXT: H
TEXT: H
SUBJECT: Linearize
TITLE: Linearize*: Interpolate to a linear scale
TEXT: H
TEXT: H _5._3._2_3. _L_i_n_e_a_r_i_z_e*: _I_n_t_e_r_p_o_l_a_t_e _t_o _a _l_i_n_e_a_r _s_c_a_l_e
TEXT: H
TEXT: H _G_e_n_e_r_a_l _F_o_r_m
TEXT: H
TEXT: H linearize vec ...
TEXT: H
TEXT: H
TEXT: H Create a new plot with all of the vectors in the
TEXT: H current plot, or only those mentioned if arguments are
TEXT: H given. The new vectors are interpolated onto a linear
TEXT: H time scale, which is determined by the values of tstep,
TEXT: H tstart, and tstop in the currently active transient
TEXT: H analysis. The currently loaded input file must include
TEXT: H a transient analysis (a tran command may be run interac-
TEXT: H tively before the last reset, alternately), and the
TEXT: H current plot must be from this transient analysis. This
TEXT: H command is needed because Spice3 doesn't output the
TEXT: H results from a transient analysis in the same manner
TEXT: H that Spice2 did.
TEXT: H
TEXT: H
SUBJECT: Listing
TITLE: Listing*: Print a listing of the current circuit
TEXT: H
TEXT: H _5._3._2_4. _L_i_s_t_i_n_g*: _P_r_i_n_t _a _l_i_s_t_i_n_g _o_f _t_h_e _c_u_r_r_e_n_t _c_i_r_c_u_i_t
TEXT: H
TEXT: H _G_e_n_e_r_a_l _F_o_r_m
TEXT: H
TEXT: H listing [logical] [physical] [deck] [expand]
TEXT: H
TEXT: H
TEXT: H If the logical argument is given, the listing is
TEXT: H with all continuation lines collapsed into one line, and
TEXT: H if the physical argument is given the lines are printed
TEXT: H out as they were found in the file. The default is log-
TEXT: H ical. A deck listing is just like the physical listing,
TEXT: H except without the line numbers it recreates the input
TEXT: H file verbatim (except that it does not preserve case).
TEXT: H If the word expand is present, the circuit is printed
TEXT: H with all subcircuits expanded.
TEXT: H
TEXT: H
SUBJECT: Load
TITLE: Load: Load rawfile data
TEXT: H
TEXT: H _5._3._2_5. _L_o_a_d: _L_o_a_d _r_a_w_f_i_l_e _d_a_t_a
TEXT: H
TEXT: H _G_e_n_e_r_a_l _F_o_r_m
TEXT: H
TEXT: H load [filename] ...
TEXT: H
TEXT: H
TEXT: H Loads either binary or ascii format rawfile data
TEXT: H from the files named. The default filename is
TEXT: H rawspice.raw, or the argument to the -r flag if there
TEXT: H was one.
TEXT: H
TEXT: H
SUBJECT: Op
TITLE: Op*: Perform an operating point analysis
TEXT: H
TEXT: H _5._3._2_6. _O_p*: _P_e_r_f_o_r_m _a_n _o_p_e_r_a_t_i_n_g _p_o_i_n_t _a_n_a_l_y_s_i_s
TEXT: H
TEXT: H _G_e_n_e_r_a_l _F_o_r_m
TEXT: H
TEXT: H op
TEXT: H
TEXT: H
TEXT: H Do an operating point analysis. See the previous
TEXT: H sections of this manual for more details.
TEXT: H
TEXT: H
SUBJECT: Plot
TITLE: Plot: Plot values on the display
TEXT: H
TEXT: H _5._3._2_7. _P_l_o_t: _P_l_o_t _v_a_l_u_e_s _o_n _t_h_e _d_i_s_p_l_a_y
TEXT: H
TEXT: H _G_e_n_e_r_a_l _F_o_r_m
TEXT: H
TEXT: H plot exprs [ylimit ylo yhi] [xlimit xlo xhi] [xindices xilo xihi]
TEXT: H [xcompress comp] [xdelta xdel] [ydelta ydel] [xlog] [ylog] [loglog]
TEXT: H [vs xname] [xlabel word] [ylabel word] [title word] [samep]
TEXT: H [linear]
TEXT: H
TEXT: H
TEXT: H
TEXT: H Plot the given _e_x_p_r_s on the screen (if you are on a
TEXT: H graphics terminal). The _x_l_i_m_i_t and _y_l_i_m_i_t arguments deter-
TEXT: H mine the high and low x- and y-limits of the axes, respec-
TEXT: H tively. The _x_i_n_d_i_c_e_s arguments determine what range of
TEXT: H points are to be plotted - everything between the xilo'th
TEXT: H point and the xihi'th point is plotted. The _x_c_o_m_p_r_e_s_s argu-
TEXT: H ment specifies that only one out of every comp points should
TEXT: H be plotted. If an xdelta or a ydelta parameter is present,
TEXT: H it specifies the spacing between grid lines on the X- and
TEXT: H Y-axis. These parameter names may be abbreviated to _x_l, _y_l,
TEXT: H _x_i_n_d, _x_c_o_m_p, _x_d_e_l, and _y_d_e_l respectively.
TEXT: H
TEXT: H The _x_n_a_m_e argument is an expression to use as the scale
TEXT: H on the x-axis. If xlog or ylog are present then the X or Y
TEXT: H scale, respectively, is logarithmic (loglog is the same as
TEXT: H specifying both). The xlabel and ylabel arguments cause the
TEXT: H specified labels to be used for the X and Y axes, respec-
TEXT: H tively.
TEXT: H
TEXT: H If samep is given, the values of the other parameters
TEXT: H (other than xname) from the previous plot, hardcopy, or
TEXT: H asciiplot command is used unless re-defined on the command
TEXT: H line.
TEXT: H
TEXT: H The title argument is used in the place of the plot
TEXT: H name at the bottom of the graph.
TEXT: H
TEXT: H The linear keyword is used to override a default log-
TEXT: H scale plot (as in the output for an AC analysis).
TEXT: H
TEXT: H Finally, the keyword polar to generate a polar plot.
TEXT: H To produce a smith plot, use the keyword smith. Note that
TEXT: H the data is transformed, so for smith plots you will see the
TEXT: H data transformed by the function (x-1)/(x+1). To produce a
TEXT: H polar plot with a smith grid but without performing the
TEXT: H smith transform, use the keyword smithgrid.
TEXT: H
SUBJECT: Print
TITLE: Print: Print values
TEXT: H
TEXT: H _5._3._2_8. _P_r_i_n_t: _P_r_i_n_t _v_a_l_u_e_s
TEXT: H
TEXT: H _G_e_n_e_r_a_l _F_o_r_m
TEXT: H
TEXT: H print [col] [line] expr ...
TEXT: H
TEXT: H
TEXT: H Prints the vector described by the expression _e_x_p_r.
TEXT: H If the _c_o_l argument is present, print the vectors named
TEXT: H side by side. If line is given, the vectors are printed
TEXT: H horizontally. col is the default, unless all the vec-
TEXT: H tors named have a length of one, in which case line is
TEXT: H the default. The options width, length, and nobreak are
TEXT: H effective for this command (see asciiplot). If the ex-
TEXT: H pression is all, all of the vectors available are print-
TEXT: H ed. Thus print col all > file prints everything in the
TEXT: H file in SPICE2 format. The scale vector (time, frequen-
TEXT: H cy) is always in the first column unless the variable
TEXT: H noprintscale is true.
TEXT: H
TEXT: H
SUBJECT: Quit
TITLE: Quit: Leave Spice3 or Nutmeg
TEXT: H
TEXT: H _5._3._2_9. _Q_u_i_t: _L_e_a_v_e _S_p_i_c_e_3 _o_r _N_u_t_m_e_g
TEXT: H
TEXT: H _G_e_n_e_r_a_l _F_o_r_m
TEXT: H
TEXT: H quit
TEXT: H
TEXT: H
TEXT: H Quit nutmeg or spice.
TEXT: H
TEXT: H
SUBJECT: Rehash
TITLE: Rehash: Reset internal hash tables
TEXT: H
TEXT: H _5._3._3_0. _R_e_h_a_s_h: _R_e_s_e_t _i_n_t_e_r_n_a_l _h_a_s_h _t_a_b_l_e_s
TEXT: H
TEXT: H _G_e_n_e_r_a_l _F_o_r_m
TEXT: H
TEXT: H rehash
TEXT: H
TEXT: H
TEXT: H Recalculate the internal hash tables used when
TEXT: H looking up UNIX commands, and make all UNIX commands in
TEXT: H the user's PATH available for command completion. This
TEXT: H is useless unless you have set unixcom first (see
TEXT: H above).
TEXT: H
TEXT: H
SUBJECT: Reset
TITLE: Reset*: Reset an analysis
TEXT: H
TEXT: H _5._3._3_1. _R_e_s_e_t*: _R_e_s_e_t _a_n _a_n_a_l_y_s_i_s
TEXT: H
TEXT: H _G_e_n_e_r_a_l _F_o_r_m
TEXT: H
TEXT: H reset
TEXT: H
TEXT: H
TEXT: H Throw out any intermediate data in the circuit
TEXT: H (e.g, after a breakpoint or after one or more analyses
TEXT: H have been done already), and re-parse the input file.
TEXT: H The circuit can then be re-run from it's initial state,
TEXT: H overriding the effect of any set or alter commands. In
TEXT: H Spice-3e and earlier versions this was done automatical-
TEXT: H ly by the run command.
TEXT: H
TEXT: H
SUBJECT: Reshape
TITLE: Reshape: Alter the dimensionality or dimensions of a vector
TEXT: H
TEXT: H _5._3._3_2. _R_e_s_h_a_p_e: _A_l_t_e_r _t_h_e _d_i_m_e_n_s_i_o_n_a_l_i_t_y _o_r _d_i_m_e_n_s_i_o_n_s _o_f
TEXT: H _a _v_e_c_t_o_r
TEXT: H
TEXT: H _G_e_n_e_r_a_l _F_o_r_m
TEXT: H
TEXT: H reshape _v_e_c_t_o_r _v_e_c_t_o_r ...
TEXT: H or
TEXT: H reshape _v_e_c_t_o_r _v_e_c_t_o_r ... [ _d_i_m_e_n_s_i_o_n, _d_i_m_e_n_s_i_o_n, ... ]
TEXT: H or
TEXT: H reshape _v_e_c_t_o_r _v_e_c_t_o_r ... [ _d_i_m_e_n_s_i_o_n ][ _d_i_m_e_n_s_i_o_n ] ...
TEXT: H
TEXT: H
TEXT: H This command changes the dimensions of a vector or
TEXT: H a set of vectors. The final dimension may be left off
TEXT: H and it will be filled in automatically. If no dimen-
TEXT: H sions are specified, then the dimensions of the first
TEXT: H vector are copied to the other vectors. An error mes-
TEXT: H sage of the form 'dimensions of _x were inconsistent' can
TEXT: H be ignored.
TEXT: H
TEXT: H
SUBJECT: Resume
TITLE: Resume*: Continue a simulation after a stop
TEXT: H
TEXT: H _5._3._3_3. _R_e_s_u_m_e*: _C_o_n_t_i_n_u_e _a _s_i_m_u_l_a_t_i_o_n _a_f_t_e_r _a _s_t_o_p
TEXT: H
TEXT: H _G_e_n_e_r_a_l _F_o_r_m
TEXT: H
TEXT: H resume
TEXT: H
TEXT: H
TEXT: H Resume a simulation after a stop or interruption
TEXT: H (control-C).
TEXT: H
TEXT: H
SUBJECT: Rspice
TITLE: Rspice: Remote spice submission
TEXT: H
TEXT: H _5._3._3_4. _R_s_p_i_c_e: _R_e_m_o_t_e _s_p_i_c_e _s_u_b_m_i_s_s_i_o_n
TEXT: H
TEXT: H _G_e_n_e_r_a_l _F_o_r_m
TEXT: H
TEXT: H rspice _i_n_p_u_t _f_i_l_e
TEXT: H
TEXT: H
TEXT: H Runs a SPICE-3 remotely taking the input file as a
TEXT: H SPICE-3 input file, or the current circuit if no argu-
TEXT: H ment is given. Nutmeg or Spice3 waits for the job to
TEXT: H complete, and passes output from the remote job to the
TEXT: H user's standard output. When the job is finished the
TEXT: H data is loaded in as with aspice. If the variable _r_h_o_s_t
TEXT: H is set, nutmeg connects to this host instead of the de-
TEXT: H fault remote Spice3 server machine. This command uses
TEXT: H the "rsh" command and thereby requires authentication
TEXT: H via a ".rhosts" file or other equivalent method. Note
TEXT: H that "rsh" refers to the "remote shell" program, which
TEXT: H may be "remsh" on your system; to override the default
TEXT: H name of "rsh", set the variable _r_e_m_o_t_e__s_h_e_l_l. If the
TEXT: H variable _r_p_r_o_g_r_a_m is set, then rspice uses this as the
TEXT: H pathname to the program to run on the remote system.
TEXT: H
TEXT: H Note: rspice will not acknowledge elements that
TEXT: H have been changed via the "alter" or "altermod" com-
TEXT: H mands.
TEXT: H
TEXT: H
SUBJECT: Run
TITLE: Run*: Run analysis from the input file
TEXT: H
TEXT: H _5._3._3_5. _R_u_n*: _R_u_n _a_n_a_l_y_s_i_s _f_r_o_m _t_h_e _i_n_p_u_t _f_i_l_e
TEXT: H
TEXT: H _G_e_n_e_r_a_l _F_o_r_m
TEXT: H
TEXT: H run [rawfile]
TEXT: H
TEXT: H
TEXT: H Run the simulation as specified in the input file.
TEXT: H If there were any of the control lines .ac, .op, .tran,
TEXT: H or .dc, they are executed. The output is put in rawfile
TEXT: H if it was given, in addition to being available interac-
TEXT: H tively. In Spice-3e and earlier versions, the input
TEXT: H file would be re-read and any effects of the set or
TEXT: H alter commands would be reversed. This is no longer the
TEXT: H effect.
TEXT: H
TEXT: H
SUBJECT: Rusage
TITLE: Rusage: Resource usage
TEXT: H
TEXT: H _5._3._3_6. _R_u_s_a_g_e: _R_e_s_o_u_r_c_e _u_s_a_g_e
TEXT: H
TEXT: H _G_e_n_e_r_a_l _F_o_r_m
TEXT: H
TEXT: H rusage [resource ...]
TEXT: H
TEXT: H
TEXT: H Print resource usage statistics. If any resources
TEXT: H are given, just print the usage of that resource. Most
TEXT: H resources require that a circuit be loaded. Currently
TEXT: H valid resources are:
TEXT: H
TEXT: H elapsed The amount of time elapsed since the last rusage
TEXT: H elaped call.
TEXT: H faults Number of page faults and context switches (BSD only).
TEXT: H space Data space used.
TEXT: H time CPU time used so far.
TEXT: H
TEXT: H temp Operating temperature.
TEXT: H tnom Temperature at which device parameters were measured.
TEXT: H equations Circuit Equations
TEXT: H
TEXT: H time Total Analysis Time
TEXT: H totiter Total iterations
TEXT: H accept Accepted timepoints
TEXT: H rejected Rejected timepoints
TEXT: H
TEXT: H loadtime Time spent loading the circuit matrix and RHS.
TEXT: H reordertime Matrix reordering time
TEXT: H lutime L-U decomposition time
TEXT: H solvetime Matrix solve time
TEXT: H
TEXT: H trantime Transient analysis time
TEXT: H tranpoints Transient timepoints
TEXT: H traniter Transient iterations
TEXT: H trancuriters Transient iterations for the last time point*
TEXT: H tranlutime Transient L-U decomposition time
TEXT: H transolvetime Transient matrix solve time
TEXT: H
TEXT: H everything All of the above.
TEXT: H
TEXT: H * listed incorrectly as "Transient iterations per point".
TEXT: H
TEXT: H
SUBJECT: Save
TITLE: Save*: Save a set of outputs
TEXT: H
TEXT: H _5._3._3_7. _S_a_v_e*: _S_a_v_e _a _s_e_t _o_f _o_u_t_p_u_t_s
TEXT: H
TEXT: H _G_e_n_e_r_a_l _F_o_r_m
TEXT: H
TEXT: H save [all | _o_u_t_p_u_t ...]
TEXT: H .save [all | _o_u_t_p_u_t ...]
TEXT: H
TEXT: H
TEXT: H Save a set of outputs, discarding the rest. If a
TEXT: H node has been mentioned in a save command, it appears in
TEXT: H the working plot after a run has completed, or in the
TEXT: H rawfile if spice is run in batch mode. If a node is
TEXT: H traced or plotted (see below) it is also saved. For
TEXT: H backward compatibility, if there are no save commands
TEXT: H given, all outputs are saved.
TEXT: H
TEXT: H When the keyword "all" or the keyword "allv", appears in
TEXT: H the save command, all node voltages, voltage source
TEXT: H currents and inductor currents are saved in addition to
TEXT: H any other values listed. If the keyword "alli" appears
TEXT: H in the save command, all devices currents are saved.
TEXT: H
TEXT: H Note: the current implementation saves only the currents
TEXT: H of devices which have internal nodes, i.e. MOSFETs
TEXT: H with non zero RD and RS; BJTs with non-zero RC, RB
TEXT: H and RE; DIODEs with non-zero RS; etc. Resistor and
TEXT: H capacitor currents are not saved with this option.
TEXT: H These deficiencies will be addressed in a later
TEXT: H revision.
SUBJECT: Sens
TITLE: Sens*: Run a sensitivity analysis
TEXT: H
TEXT: H _5._3._3_8. _S_e_n_s*: _R_u_n _a _s_e_n_s_i_t_i_v_i_t_y _a_n_a_l_y_s_i_s
TEXT: H
TEXT: H _G_e_n_e_r_a_l _F_o_r_m
TEXT: H
TEXT: H sens _o_u_t_p_u_t__v_a_r_i_a_b_l_e
TEXT: H sens _o_u_t_p_u_t__v_a_r_i_a_b_l_e ac ( DEC | OCT | LIN ) _N _F_s_t_a_r_t _F_s_t_o_p
TEXT: H
TEXT: H
TEXT: H Perform a Sensitivity analysis. _o_u_t_p_u_t__v_a_r_i_a_b_l_e is
TEXT: H either a node voltage (ex. "v(1)" or "v(A,out)") or a
TEXT: H current through a voltage source (ex. "i(vtest)"). The
TEXT: H first form calculates DC sensitivities, the second form
TEXT: H calculates AC sensitivies. The output values are in di-
TEXT: H mensions of change in output per unit change of input
TEXT: H (as opposed to percent change in output or per percent
TEXT: H change of input).
TEXT: H
TEXT: H
SUBJECT: Set
TITLE: Set: Set the value of a variable
TEXT: H
TEXT: H _5._3._3_9. _S_e_t: _S_e_t _t_h_e _v_a_l_u_e _o_f _a _v_a_r_i_a_b_l_e
TEXT: H
TEXT: H _G_e_n_e_r_a_l _F_o_r_m
TEXT: H
TEXT: H set [word]
TEXT: H set [word = value] ...
TEXT: H
TEXT: H
TEXT: H Set the value of word to be value, if it is
TEXT: H present. You can set any word to be any value, numeric
TEXT: H or string. If no value is given then the value is the
TEXT: H boolean 'true'.
TEXT: H
TEXT: H
TEXT: H The value of _w_o_r_d may be inserted into a command by
TEXT: H writing $_w_o_r_d. If a variable is set to a list of values
TEXT: H that are enclosed in parentheses (which must be separated
TEXT: H from their values by white space), the value of the variable
TEXT: H is the list.
TEXT: H
TEXT: H The variables used by nutmeg are listed in the follow-
TEXT: H ing section.
TEXT: H
SUBJECT: Setcirc
TITLE: Setcirc*: Change the current circuit
TEXT: H
TEXT: H _5._3._4_0. _S_e_t_c_i_r_c*: _C_h_a_n_g_e _t_h_e _c_u_r_r_e_n_t _c_i_r_c_u_i_t
TEXT: H
TEXT: H _G_e_n_e_r_a_l _F_o_r_m
TEXT: H
TEXT: H setcirc [circuit name]
TEXT: H
TEXT: H
TEXT: H The current circuit is the one that is used for the
TEXT: H simulation commands below. When a circuit is loaded
TEXT: H with the source command (see below) it becomes the
TEXT: H current circuit.
TEXT: H
TEXT: H
SUBJECT: Setplot
TITLE: Setplot: Switch the current set of vectors
TEXT: H
TEXT: H _5._3._4_1. _S_e_t_p_l_o_t: _S_w_i_t_c_h _t_h_e _c_u_r_r_e_n_t _s_e_t _o_f _v_e_c_t_o_r_s
TEXT: H
TEXT: H _G_e_n_e_r_a_l _F_o_r_m
TEXT: H
TEXT: H setplot [plotname]
TEXT: H
TEXT: H
TEXT: H Set the current plot to the plot with the given
TEXT: H name, or if no name is given, prompt the user with a
TEXT: H menu. (Note that the plots are named as they are loaded,
TEXT: H with names like tran1 or op2. These names are shown by
TEXT: H the setplot and display commands and are used by diff,
TEXT: H below.) If the "New plot" item is selected, the current
TEXT: H plot becomes one with no vectors defined.
TEXT: H
TEXT: H Note that here the word "plot" refers to a group of
TEXT: H vectors that are the result of one SPICE run. When more
TEXT: H than one file is loaded in, or more than one plot is
TEXT: H present in one file, nutmeg keeps them separate and only
TEXT: H shows you the vectors in the current plot.
TEXT: H
TEXT: H
SUBJECT: Settype
TITLE: Settype: Set the type of a vector
TEXT: H
TEXT: H _5._3._4_2. _S_e_t_t_y_p_e: _S_e_t _t_h_e _t_y_p_e _o_f _a _v_e_c_t_o_r
TEXT: H
TEXT: H _G_e_n_e_r_a_l _F_o_r_m
TEXT: H
TEXT: H settype type vector ...
TEXT: H
TEXT: H
TEXT: H Change the type of the named vectors to type. Type
TEXT: H names can be found in the manual page for sconvert.
TEXT: H
TEXT: H
SUBJECT: Shell
TITLE: Shell: Call the command interpreter
TEXT: H
TEXT: H _5._3._4_3. _S_h_e_l_l: _C_a_l_l _t_h_e _c_o_m_m_a_n_d _i_n_t_e_r_p_r_e_t_e_r
TEXT: H
TEXT: H _G_e_n_e_r_a_l _F_o_r_m
TEXT: H
TEXT: H shell [ _c_o_m_m_a_n_d ]
TEXT: H
TEXT: H
TEXT: H Call the operating system's command interpreter;
TEXT: H execute the specified command or call for interactive
TEXT: H use.
TEXT: H
TEXT: H
SUBJECT: Shift
TITLE: Shift: Alter a list variable
TEXT: H
TEXT: H _5._3._4_4. _S_h_i_f_t: _A_l_t_e_r _a _l_i_s_t _v_a_r_i_a_b_l_e
TEXT: H
TEXT: H _G_e_n_e_r_a_l _F_o_r_m
TEXT: H
TEXT: H shift [varname] [number]
TEXT: H
TEXT: H
TEXT: H If _v_a_r_n_a_m_e is the name of a list variable, it is
TEXT: H shifted to the left by _n_u_m_b_e_r elements (i.e, the _n_u_m_b_e_r
TEXT: H leftmost elements are removed). The default _v_a_r_n_a_m_e is
TEXT: H argv, and the default _n_u_m_b_e_r is 1.
TEXT: H
TEXT: H
SUBJECT: Show
TITLE: Show*: List device state
TEXT: H
TEXT: H _5._3._4_5. _S_h_o_w*: _L_i_s_t _d_e_v_i_c_e _s_t_a_t_e
TEXT: H
TEXT: H _G_e_n_e_r_a_l _F_o_r_m
TEXT: H
TEXT: H show _d_e_v_i_c_e_s [ : _p_a_r_a_m_e_t_e_r_s ] , ...
TEXT: H
TEXT: H
TEXT: H _O_l_d _F_o_r_m
TEXT: H
TEXT: H show -v @_d_e_v_i_c_e [ [ _n_a_m_e ] ]
TEXT: H
TEXT: H
TEXT: H The show command prints out tables summarizing the
TEXT: H operating condition of selected devices (much like the
TEXT: H spice2 operation point summary). If _d_e_v_i_c_e is missing,
TEXT: H a default set of devices are listed, if _d_e_v_i_c_e is a sin-
TEXT: H gle letter, devices of that type are listed; if _d_e_v_i_c_e
TEXT: H is a subcircuit name (beginning and ending in ":") only
TEXT: H devices in that subcircuit are shown (end the name in a
TEXT: H double-":" to get devices within sub-subcircuits recur-
TEXT: H sively). The second and third forms may be combined
TEXT: H ("letter:subcircuit:") or "letter:subcircuit::") to
TEXT: H select a specific type of device from a subcircuit. A
TEXT: H device's full name may be specified to list only that
TEXT: H device. Finally, devices may be selected by model by
TEXT: H using the form "#modelname" or ":subcircuit#modelname"
TEXT: H or "letter:subcircuit#modelname".
TEXT: H
TEXT: H If no _p_a_r_a_m_e_t_e_r_s are specified, the values for a
TEXT: H standard set of parameters are listed. If the list of
TEXT: H _p_a_r_a_m_e_t_e_r_s contains a "+", the default set of parameters
TEXT: H is listed along with any other specified parameters.
TEXT: H
TEXT: H For both _d_e_v_i_c_e_s and _p_a_r_a_m_e_t_e_r_s, the word "all" has
TEXT: H the obvious meaning. Note: there must be spaces
TEXT: H separating the ":" that divides the _d_e_v_i_c_e list from the
TEXT: H _p_a_r_a_m_e_t_e_r list.
TEXT: H
TEXT: H The "old form" (with "-v") prints the data in a
TEXT: H older, more verbose pre-spice3f format.
TEXT: H
TEXT: H
SUBJECT: Showmod
TITLE: Showmod*: List model parameter values
TEXT: H
TEXT: H _5._3._4_6. _S_h_o_w_m_o_d*: _L_i_s_t _m_o_d_e_l _p_a_r_a_m_e_t_e_r _v_a_l_u_e_s
TEXT: H
TEXT: H _G_e_n_e_r_a_l _F_o_r_m
TEXT: H
TEXT: H showmod _m_o_d_e_l_s [ : _p_a_r_a_m_e_t_e_r_s ] , ...
TEXT: H
TEXT: H
TEXT: H The showmod command operates like the show command
TEXT: H (above) but prints out model parameter values. The ap-
TEXT: H plicable forms for _m_o_d_e_l_s are a single letter specifying
TEXT: H the device type letter, "letter:subckt:", "modelname",
TEXT: H ":subckt:modelname", or "letter:subcircuit:modelname".
TEXT: H
TEXT: H
SUBJECT: Source
TITLE: Source: Read a Spice3 input file
TEXT: H
TEXT: H _5._3._4_7. _S_o_u_r_c_e: _R_e_a_d _a _S_p_i_c_e_3 _i_n_p_u_t _f_i_l_e
TEXT: H
TEXT: H _G_e_n_e_r_a_l _F_o_r_m
TEXT: H
TEXT: H source _f_i_l_e
TEXT: H
TEXT: H
TEXT: H For Spice3: Read the Spice3 input file file. Nut-
TEXT: H meg and Spice3 commands may be included in the file, and
TEXT: H must be enclosed between the lines ._c_o_n_t_r_o_l and ._e_n_d_c.
TEXT: H These commands are executed immediately after the cir-
TEXT: H cuit is loaded, so a control line of _a_c ... works the
TEXT: H same as the corresponding ._a_c card. The first line in
TEXT: H any input file is considered a title line and not parsed
TEXT: H but kept as the name of the circuit. The exception to
TEXT: H this rule is the file ._s_p_i_c_e_i_n_i_t. Thus, a Spice3 com-
TEXT: H mand script must begin with a blank line and then with a
TEXT: H .control line. Also, any line beginning with the char-
TEXT: H acters *# is considered a control line. This makes it
TEXT: H possible to imbed commands in Spice3 input files that
TEXT: H are ignored by earlier versions of Spice2
TEXT: H
TEXT: H For Nutmeg: Reads commands from the file _f_i_l_e_n_a_m_e.
TEXT: H Lines beginning with the character * are considered com-
TEXT: H ments and ignored.
TEXT: H
TEXT: H
SUBJECT: Status
TITLE: Status*: Display breakpoint information
TEXT: H
TEXT: H _5._3._4_8. _S_t_a_t_u_s*: _D_i_s_p_l_a_y _b_r_e_a_k_p_o_i_n_t _i_n_f_o_r_m_a_t_i_o_n
TEXT: H
TEXT: H _G_e_n_e_r_a_l _F_o_r_m
TEXT: H
TEXT: H status
TEXT: H
TEXT: H
TEXT: H Display all of the traces and breakpoints currently
TEXT: H in effect.
TEXT: H
TEXT: H
SUBJECT: Step
TITLE: Step*: Run a fixed number of timepoints
TEXT: H
TEXT: H _5._3._4_9. _S_t_e_p*: _R_u_n _a _f_i_x_e_d _n_u_m_b_e_r _o_f _t_i_m_e_p_o_i_n_t_s
TEXT: H
TEXT: H _G_e_n_e_r_a_l _F_o_r_m
TEXT: H
TEXT: H step [number]
TEXT: H
TEXT: H
TEXT: H Iterate number times, or once, and then stop.
TEXT: H
TEXT: H
SUBJECT: Stop
TITLE: Stop*: Set a breakpoint
TEXT: H
TEXT: H _5._3._5_0. _S_t_o_p*: _S_e_t _a _b_r_e_a_k_p_o_i_n_t
TEXT: H
TEXT: H _G_e_n_e_r_a_l _F_o_r_m
TEXT: H
TEXT: H stop [ after n] [ when _v_a_l_u_e _c_o_n_d _v_a_l_u_e ] ...
TEXT: H
TEXT: H
TEXT: H Set a breakpoint. The argument after n means stop
TEXT: H after n iteration number n, and the argument when _v_a_l_u_e
TEXT: H _c_o_n_d _v_a_l_u_e means stop when the first _v_a_l_u_e is in the
TEXT: H given relation with the second _v_a_l_u_e, the possible rela-
TEXT: H tions being
TEXT: H
TEXT: H eq or = equal to
TEXT: H ne or <> not equal to
TEXT: H gt or > greater than
TEXT: H lt or < less than
TEXT: H ge or >= greater than or equal to
TEXT: H le or <= less than or equal to
TEXT: H
TEXT: H
TEXT: H IO redirection is disabled for the stop command, since the
TEXT: H relational operations conflict with it (it doesn't produce
TEXT: H any output anyway). The _v_a_l_u_es above may be node names in
TEXT: H the running circuit, or real values. If more than one con-
TEXT: H dition is given, e.g. stop after 4 when v(1) > 4 when v(2)
TEXT: H < 2, the conjunction of the conditions is implied.
TEXT: H
TEXT: H
SUBJECT: Tf
TITLE: Tf*: Run a Transfer Function analysis
TEXT: H
TEXT: H _5._3._5_1. _T_f*: _R_u_n _a _T_r_a_n_s_f_e_r _F_u_n_c_t_i_o_n _a_n_a_l_y_s_i_s
TEXT: H
TEXT: H _G_e_n_e_r_a_l _F_o_r_m
TEXT: H
TEXT: H tf _o_u_t_p_u_t__n_o_d_e _i_n_p_u_t__s_o_u_r_c_e
TEXT: H
TEXT: H
TEXT: H The tf command performs a transfer function
TEXT: H analysis, returning the transfer function
TEXT: H (output/input), output resistance, and input resistance
TEXT: H between the given output node and the given input
TEXT: H source. The analysis assumes a small-signal DC (slowly
TEXT: H varying) input.
TEXT: H
TEXT: H
SUBJECT: Trace
TITLE: Trace*: Trace nodes
TEXT: H
TEXT: H _5._3._5_2. _T_r_a_c_e*: _T_r_a_c_e _n_o_d_e_s
TEXT: H
TEXT: H _G_e_n_e_r_a_l _F_o_r_m
TEXT: H
TEXT: H trace [ node ...]
TEXT: H
TEXT: H
TEXT: H For every step of an analysis, the value of the
TEXT: H node is printed. Several traces may be active at once.
TEXT: H Tracing is not applicable for all analyses. To remove a
TEXT: H trace, use the delete command.
TEXT: H
TEXT: H
SUBJECT: Tran
TITLE: Tran*: Perform a transient analysis
TEXT: H
TEXT: H _5._3._5_3. _T_r_a_n*: _P_e_r_f_o_r_m _a _t_r_a_n_s_i_e_n_t _a_n_a_l_y_s_i_s
TEXT: H
TEXT: H _G_e_n_e_r_a_l _F_o_r_m
TEXT: H
TEXT: H tran _T_s_t_e_p _T_s_t_o_p [ _T_s_t_a_r_t [ _T_m_a_x ] ] [ UIC ]
TEXT: H
TEXT: H
TEXT: H Perform a transient analysis. See the previous
TEXT: H sections of this manual for more details.
TEXT: H
TEXT: H
SUBJECT: Transpose
TITLE: Transpose: Swap the elements in a multi-dimensional data set
TEXT: H
TEXT: H _5._3._5_4. _T_r_a_n_s_p_o_s_e: _S_w_a_p _t_h_e _e_l_e_m_e_n_t_s _i_n _a _m_u_l_t_i-_d_i_m_e_n_s_i_o_n_a_l
TEXT: H _d_a_t_a _s_e_t
TEXT: H
TEXT: H _G_e_n_e_r_a_l _F_o_r_m
TEXT: H
TEXT: H transpose _v_e_c_t_o_r _v_e_c_t_o_r ...
TEXT: H
TEXT: H
TEXT: H This command transposes a multidimensional vector.
TEXT: H No analysis in Spice3 produces multidimensional vectors,
TEXT: H although the DC transfer curve may be run with two vary-
TEXT: H ing sources. You must use the "reshape" command to re-
TEXT: H form the one-dimensional vectors into two dimensional
TEXT: H vectors. In addition, the default scale is incorrect
TEXT: H for plotting. You must plot versus the vector
TEXT: H corresponding to the second source, but you must also
TEXT: H refer only to the first segment of this second source
TEXT: H vector. For example (circuit to produce the tranfer
TEXT: H characteristic of a MOS transistor):
TEXT: H
TEXT: H spice3 > dc vgg 0 5 1 vdd 0 5 1
TEXT: H spice3 > plot i(vdd)
TEXT: H spice3 > reshape all [6,6]
TEXT: H spice3 > transpose i(vdd) v(drain)
TEXT: H spice3 > plot i(vdd) vs v(drain)[0]
TEXT: H
TEXT: H
TEXT: H
SUBJECT: Unalias
TITLE: Unalias: Retract an alias
TEXT: H
TEXT: H _5._3._5_5. _U_n_a_l_i_a_s: _R_e_t_r_a_c_t _a_n _a_l_i_a_s
TEXT: H
TEXT: H _G_e_n_e_r_a_l _F_o_r_m
TEXT: H
TEXT: H unalias [word ...]
TEXT: H
TEXT: H
TEXT: H Removes any aliases present for the words.
TEXT: H
TEXT: H
SUBJECT: Undefine
TITLE: Undefine: Retract a definition
TEXT: H
TEXT: H _5._3._5_6. _U_n_d_e_f_i_n_e: _R_e_t_r_a_c_t _a _d_e_f_i_n_i_t_i_o_n
TEXT: H
TEXT: H _G_e_n_e_r_a_l _F_o_r_m
TEXT: H
TEXT: H undefine function
TEXT: H
TEXT: H
TEXT: H Definitions for the named user-defined functions
TEXT: H are deleted.
TEXT: H
TEXT: H
SUBJECT: Unset
TITLE: Unset: Clear a variable
TEXT: H
TEXT: H _5._3._5_7. _U_n_s_e_t: _C_l_e_a_r _a _v_a_r_i_a_b_l_e
TEXT: H
TEXT: H _G_e_n_e_r_a_l _F_o_r_m
TEXT: H
TEXT: H unset [_w_o_r_d ...]
TEXT: H
TEXT: H
TEXT: H Clear the value of the specified variable(s)
TEXT: H (_w_o_r_d).
TEXT: H
TEXT: H
SUBJECT: Version
TITLE: Version: Print the version of Spice
TEXT: H
TEXT: H _5._3._5_8. _V_e_r_s_i_o_n: _P_r_i_n_t _t_h_e _v_e_r_s_i_o_n _o_f _S_p_i_c_e
TEXT: H
TEXT: H _G_e_n_e_r_a_l _F_o_r_m
TEXT: H
TEXT: H version [version id]
TEXT: H
TEXT: H
TEXT: H Print out the version of nutmeg that is running.
TEXT: H If there are arguments, it checks to make sure that the
TEXT: H arguments match the current version of SPICE. (This is
TEXT: H mainly used as a Command: line in rawfiles.)
TEXT: H
TEXT: H
SUBJECT: Where
TITLE: Where: Identify troublesome node or device
TEXT: H
TEXT: H _5._3._5_9. _W_h_e_r_e: _I_d_e_n_t_i_f_y _t_r_o_u_b_l_e_s_o_m_e _n_o_d_e _o_r _d_e_v_i_c_e
TEXT: H
TEXT: H _G_e_n_e_r_a_l _F_o_r_m
TEXT: H
TEXT: H where
TEXT: H
TEXT: H
TEXT: H When performing a transient or operating point
TEXT: H analysis, the name of the last node or device to cause
TEXT: H non-convergence is saved. The where command prints out
TEXT: H this information so that you can examine the circuit and
TEXT: H either correct the problem or make a bug report. You
TEXT: H may do this either in the middle of a run or after the
TEXT: H simulator has given up on the analysis. For transient
TEXT: H simulation, the iplot command can be used to monitor the
TEXT: H progress of the analysis. When the analysis slows down
TEXT: H severly or hangs, interrupt the simulator (with
TEXT: H control-C) and issue the where command. Note that only
TEXT: H one node or device is printed; there may be problems
TEXT: H with more than one node.
TEXT: H
TEXT: H
SUBJECT: Write
TITLE: Write: Write data to a file
TEXT: H
TEXT: H _5._3._6_0. _W_r_i_t_e: _W_r_i_t_e _d_a_t_a _t_o _a _f_i_l_e
TEXT: H
TEXT: H _G_e_n_e_r_a_l _F_o_r_m
TEXT: H
TEXT: H write [file] [exprs]
TEXT: H
TEXT: H
TEXT: H Writes out the expressions to _f_i_l_e.
TEXT: H
TEXT: H First vectors are grouped together by plots, and
TEXT: H written out as such (i.e, if the expression list con-
TEXT: H tained three vectors from one plot and two from another,
TEXT: H then two plots are written, one with three vectors and
TEXT: H one with two). Additionally, if the scale for a vector
TEXT: H isn't present, it is automatically written out as well.
TEXT: H
TEXT: H The default format is ascii, but this can be
TEXT: H changed with the set filetype command. The default
TEXT: H filename is rawspice.raw, or the argument to the -r flag
TEXT: H on the command line, if there was one, and the default
TEXT: H expression list is all.
TEXT: H
TEXT: H
SUBJECT: Xgraph
TITLE: Xgraph: use the xgraph(1) program for plotting.
TEXT: H
TEXT: H _5._3._6_1. _X_g_r_a_p_h: _u_s_e _t_h_e _x_g_r_a_p_h(_1) _p_r_o_g_r_a_m _f_o_r _p_l_o_t_t_i_n_g.
TEXT: H
TEXT: H _G_e_n_e_r_a_l _F_o_r_m
TEXT: H
TEXT: H xgraph _f_i_l_e [exprs] [plot options]
TEXT: H
TEXT: H
TEXT: H The spice3/nutmeg xgraph command plots data like
TEXT: H the plot command but via xgraph, a popular X11 plotting
TEXT: H program.
TEXT: H
TEXT: H If _f_i_l_e is either "temp" or "tmp" a temporary file
TEXT: H is used to hold the data while being plotted. For
TEXT: H available plot options, see the plot command. All op-
TEXT: H tions except for polar or smith plots are supported.
TEXT: H
SUBJECT: CONTROL STRUCTURES
TITLE: CONTROL STRUCTURES
TEXT: H
TEXT: H _5._4. _C_O_N_T_R_O_L _S_T_R_U_C_T_U_R_E_S
TEXT: H
TEXT: H
SUBTOPIC: NGSPICE:While End
SUBTOPIC: NGSPICE:Repeat End
SUBTOPIC: NGSPICE:Dowhile End
SUBTOPIC: NGSPICE:Foreach End
SUBTOPIC: NGSPICE:If Then Else
SUBTOPIC: NGSPICE:Label
SUBTOPIC: NGSPICE:Goto
SUBTOPIC: NGSPICE:Continue
SUBTOPIC: NGSPICE:Break
SUBJECT: While End
TITLE: While - End
TEXT: H
TEXT: H _5._4._1. _W_h_i_l_e - _E_n_d
TEXT: H
TEXT: H _G_e_n_e_r_a_l _F_o_r_m
TEXT: H
TEXT: H while _c_o_n_d_i_t_i_o_n
TEXT: H statement
TEXT: H ...
TEXT: H end
TEXT: H
TEXT: H
TEXT: H While _c_o_n_d_i_t_i_o_n, an arbitrary algebraic expression,
TEXT: H is true, execute the statements.
TEXT: H
TEXT: H
SUBJECT: Repeat End
TITLE: Repeat - End
TEXT: H
TEXT: H _5._4._2. _R_e_p_e_a_t - _E_n_d
TEXT: H
TEXT: H _G_e_n_e_r_a_l _F_o_r_m
TEXT: H
TEXT: H repeat [_n_u_m_b_e_r]
TEXT: H statement
TEXT: H ...
TEXT: H end
TEXT: H
TEXT: H
TEXT: H Execute the statements _n_u_m_b_e_r times, or forever if
TEXT: H no argument is given.
TEXT: H
TEXT: H
SUBJECT: Dowhile End
TITLE: Dowhile - End
TEXT: H
TEXT: H _5._4._3. _D_o_w_h_i_l_e - _E_n_d
TEXT: H
TEXT: H _G_e_n_e_r_a_l _F_o_r_m
TEXT: H
TEXT: H dowhile _c_o_n_d_i_t_i_o_n
TEXT: H statement
TEXT: H ...
TEXT: H end
TEXT: H
TEXT: H
TEXT: H The same as while, except that the _c_o_n_d_i_t_i_o_n is
TEXT: H tested after the statements are executed.
TEXT: H
TEXT: H
SUBJECT: Foreach End
TITLE: Foreach - End
TEXT: H
TEXT: H _5._4._4. _F_o_r_e_a_c_h - _E_n_d
TEXT: H
TEXT: H _G_e_n_e_r_a_l _F_o_r_m
TEXT: H
TEXT: H foreach _v_a_r _v_a_l_u_e ...
TEXT: H statement
TEXT: H ...
TEXT: H end
TEXT: H
TEXT: H
TEXT: H The statements are executed once for each of the
TEXT: H _v_a_l_u_es, each time with the variable _v_a_r set to the
TEXT: H current one. (_v_a_r can be accessed by the $_v_a_r notation
TEXT: H - see below).
TEXT: H
TEXT: H
SUBJECT: If Then Else
TITLE: If - Then - Else
TEXT: H
TEXT: H _5._4._5. _I_f - _T_h_e_n - _E_l_s_e
TEXT: H
TEXT: H _G_e_n_e_r_a_l _F_o_r_m
TEXT: H
TEXT: H if _c_o_n_d_i_t_i_o_n
TEXT: H statement
TEXT: H ...
TEXT: H else
TEXT: H statement
TEXT: H ...
TEXT: H end
TEXT: H
TEXT: H
TEXT: H If the _c_o_n_d_i_t_i_o_n is non-zero then the first set of
TEXT: H statements are executed, otherwise the second set. The
TEXT: H else and the second set of statements may be omitted.
TEXT: H
TEXT: H
SUBJECT: Label
TITLE: Label
TEXT: H
TEXT: H _5._4._6. _L_a_b_e_l
TEXT: H
TEXT: H _G_e_n_e_r_a_l _F_o_r_m
TEXT: H
TEXT: H label _w_o_r_d
TEXT: H
TEXT: H
TEXT: H If a statement of the form goto _w_o_r_d is encoun-
TEXT: H tered, control is transferred to this point, otherwise
TEXT: H this is a no-op.
TEXT: H
TEXT: H
SUBJECT: Goto
TITLE: Goto
TEXT: H
TEXT: H _5._4._7. _G_o_t_o
TEXT: H
TEXT: H _G_e_n_e_r_a_l _F_o_r_m
TEXT: H
TEXT: H goto _w_o_r_d
TEXT: H
TEXT: H
TEXT: H If a statement of the form label _w_o_r_d is present in
TEXT: H the block or an enclosing block, control is transferred
TEXT: H there. Note that if the label is at the top level, it
TEXT: H _m_u_s_t be before the goto _s_t_a_t_e_m_e_n_t (_i._e, _a _f_o_r_w_a_r_d _g_o_t_o
TEXT: H may occur only within a block).
TEXT: H
TEXT: H
SUBJECT: Continue
TITLE: Continue
TEXT: H
TEXT: H _5._4._8. _C_o_n_t_i_n_u_e
TEXT: H _G_e_n_e_r_a_l _F_o_r_m
TEXT: H
TEXT: H continue
TEXT: H
TEXT: H
TEXT: H If there is a while, dowhile, or foreach block en-
TEXT: H closing this statement, control passes to the test, or
TEXT: H in the case of foreach, the next value is taken. Other-
TEXT: H wise an error results.
TEXT: H
TEXT: H
SUBJECT: Break
TITLE: Break
TEXT: H
TEXT: H _5._4._9. _B_r_e_a_k
TEXT: H
TEXT: H _G_e_n_e_r_a_l _F_o_r_m
TEXT: H
TEXT: H break
TEXT: H
TEXT: H
TEXT: H If there is a while, dowhile, or foreach block en-
TEXT: H closing this statement, control passes out of the block.
TEXT: H Otherwise an error results.
TEXT: H
TEXT: H Of course, control structures may be nested. When
TEXT: H a block is entered and the input is the terminal, the
TEXT: H prompt becomes a number of >'s corresponding to the
TEXT: H number of blocks the user has entered. The current con-
TEXT: H trol structures may be examined with the debugging com-
TEXT: H mand _c_d_u_m_p.
TEXT: H
SUBJECT: VARIABLES
TITLE: VARIABLES
TEXT: H
TEXT: H _5._5. _V_A_R_I_A_B_L_E_S
TEXT: H
TEXT: H
TEXT: H The operation of both Nutmeg and Spice3 may be affected
TEXT: H by setting variables with the "set" command. In addition to
TEXT: H the variables mentioned below, the set command in Spice3
TEXT: H also affect the behaviour of the simulator via the options
TEXT: H previously described under the section on ".OPTIONS".
TEXT: H
TEXT: H The variables meaningful to nutmeg which may be altered
TEXT: H by the set command are:
TEXT: H
TEXT: H diff_abstol The absolute tolerance used by the diff command.
TEXT: H appendwrite Append to the file when a write command is is-
TEXT: H sued, if one already exists.
TEXT: H color_N These variables determine the colors used, if X
TEXT: H is being run on a color display. _N may be
TEXT: H between 0 and 15. Color 0 is the background,
TEXT: H color 1 is the grid and text color, and colors 2
TEXT: H through 15 are used in order for vectors plot-
TEXT: H ted. The value of the color variables should be
TEXT: H names of colors, which may be found in the file
TEXT: H /usr/lib/rgb.txt.
TEXT: H combplot Plot vectors by drawing a vertical line from
TEXT: H each point to the X-axis, as opposed to joining
TEXT: H the points. Note that this option is subsumed
TEXT: H in the _p_l_o_t_t_y_p_e option, below.
TEXT: H cpdebug Print _c_s_h_p_a_r debugging information (must be com-
TEXT: H plied with the -DCPDEBUG flag). Unsupported in
TEXT: H the current release.
TEXT: H
TEXT: H
TEXT: H debug If set then a lot of debugging information is
TEXT: H printed (must be compiled with the -DFTEDEBUG
TEXT: H flag). Unsupported in the current release.
TEXT: H device The name (/dev/tty??) of the graphics device.
TEXT: H If this variable isn't set then the user's
TEXT: H terminal is used. To do plotting on another
TEXT: H monitor you probably have to set both the
TEXT: H device and term variables. (If device is set
TEXT: H to the name of a file, nutmeg dumps the
TEXT: H graphics control codes into this file -- this
TEXT: H is useful for saving plots.)
TEXT: H echo Print out each command before it is executed.
TEXT: H filetype This can be either _a_s_c_i_i or _b_i_n_a_r_y, and
TEXT: H determines what format are. The default is
TEXT: H _a_s_c_i_i.
TEXT: H
TEXT: H
TEXT: H fourgridsize How many points to use for interpolating
TEXT: H into when doing fourier analysis.
TEXT: H gridsize If this variable is set to an integer,
TEXT: H this number is used as the number of
TEXT: H equally spaced points to use for the Y-
TEXT: H axis when plotting. Otherwise the
TEXT: H current scale is used (which may not
TEXT: H have equally spaced points). If the
TEXT: H current scale isn't strictly monotonic,
TEXT: H then this option has no effect.
TEXT: H hcopydev If this is set, when the hardcopy com-
TEXT: H mand is run the resulting file is au-
TEXT: H tomatically printed on the printer named
TEXT: H hcopydev with the command _l_p_r -_Phcopydev
TEXT: H -_g file.
TEXT: H
TEXT: H
TEXT: H hcopyfont This variable specifies the font name
TEXT: H for hardcopy output plots. The value is
TEXT: H device dependent.
TEXT: H hcopyfontsize This is a scaling factor for the font
TEXT: H used in hardcopy plots.
TEXT: H hcopydevtype This variable specifies the type of the
TEXT: H printer output to use in the hardcopy
TEXT: H command. If hcopydevtype is not set,
TEXT: H plot (5) format is assumed. The stan-
TEXT: H dard distribution currently recognizes
TEXT: H postscript as an alternative output for-
TEXT: H mat. When used in conjunction with
TEXT: H hcopydev, hcopydevtype should specify a
TEXT: H format supported by the printer.
TEXT: H height The length of the page for asciiplot and
TEXT: H print col.
TEXT: H history The number of events to save in the his-
TEXT: H tory list.
TEXT: H lprplot5 This is a printf(3s) style format string
TEXT: H used to specify the command to use for
TEXT: H sending plot(5)-style plots to a printer
TEXT: H or plotter. The first parameter sup-
TEXT: H plied is the printer name, the second
TEXT: H parameter supplied is a file name con-
TEXT: H taining the plot. Both parameters are
TEXT: H strings. It is trivial to cause Spice3
TEXT: H to abort by supplying a unreasonable
TEXT: H format string.
TEXT: H lprps This is a printf(3s) style format string
TEXT: H used to specify the command to use for
TEXT: H sending PostScript plots to a printer or
TEXT: H plotter. The first parameter supplied
TEXT: H is the printer name, the second parame-
TEXT: H ter supplied is a file name containing
TEXT: H the plot. Both parameters are strings.
TEXT: H It is trivial to cause Spice3 to abort
TEXT: H by supplying a unreasonable format
TEXT: H string.
TEXT: H nfreqs The number of frequencies to compute in
TEXT: H the _f_o_u_r_i_e_r command. (Defaults to 10.)
TEXT: H nobreak Don't have asciiplot and print col break
TEXT: H between pages.
TEXT: H
TEXT: H
TEXT: H noasciiplotvalue Don't print the first vector plotted to
TEXT: H the left when doing an asciiplot.
TEXT: H noclobber Don't overwrite existing files when do-
TEXT: H ing IO redirection.
TEXT: H noglob Don't expand the global characters `*',
TEXT: H `?', `[', and `]'. This is the default.
TEXT: H nogrid Don't plot a grid when graphing curves
TEXT: H (but do label the axes).
TEXT: H nomoremode If nomoremode is not set, whenever a
TEXT: H large amount of data is being printed to
TEXT: H the screen (e.g, the print or asciiplot
TEXT: H commands), the output is stopped every
TEXT: H screenful and continues when a carriage
TEXT: H return is typed. If nomoremode is set
TEXT: H then data scrolls off the screen without
TEXT: H check.
TEXT: H nonomatch If noglob is unset and a global expres-
TEXT: H sion cannot be matched, use the global
TEXT: H characters literally instead of com-
TEXT: H plaining.
TEXT: H
TEXT: H
TEXT: H nosort Don't have display sort the variable names.
TEXT: H noprintscale Don't print the scale in the leftmost
TEXT: H column when a print col command is given.
TEXT: H numdgt The number of digits to print when printing
TEXT: H tables of data (fourier, print col). The
TEXT: H default precision is 6 digits. On the VAX,
TEXT: H approximately 16 decimal digits are avail-
TEXT: H able using double precision, so numdgt
TEXT: H should not be more than 16. If the number
TEXT: H is negative, one fewer digit is printed to
TEXT: H ensure constant widths in tables.
TEXT: H plottype This should be one of normal, comb, or
TEXT: H point:_c_h_a_r_s. normal, the default, causes
TEXT: H points to be plotted as parts of connected
TEXT: H lines. comb causes a comb plot to be done
TEXT: H (see the description of the combplot vari-
TEXT: H able above). point causes each point to be
TEXT: H plotted separately - the chars are a list
TEXT: H of characters that are used for each vector
TEXT: H plotted. If they are omitted then a de-
TEXT: H fault set is used.
TEXT: H polydegree The degree of the polynomial that the plot
TEXT: H command should fit to the data. If _p_o_l_y_d_e-
TEXT: H _g_r_e_e is N, then nutmeg fits a degree N po-
TEXT: H lynomial to every set of N points and draw
TEXT: H 10 intermediate points in between each end-
TEXT: H point. If the points aren't monotonic,
TEXT: H then it tries rotating the curve and reduc-
TEXT: H ing the degree until a fit is achieved.
TEXT: H polysteps The number of points to interpolate between
TEXT: H every pair of points available when doing
TEXT: H curve fitting. The default is 10.
TEXT: H program The name of the current program (_a_r_g_v[_0]).
TEXT: H prompt The prompt, with the character `!' replaced
TEXT: H by the current event number.
TEXT: H
TEXT: H
TEXT: H rawfile The default name for rawfiles created.
TEXT: H diff_reltol The relative tolerance used by the diff command.
TEXT: H remote_shell Overrides the name used for generating rspice
TEXT: H runs (default is "rsh").
TEXT: H rhost The machine to use for remote SPICE-3 runs, in-
TEXT: H stead of the default one (see the description of
TEXT: H the rspice command, below).
TEXT: H rprogram The name of the remote program to use in the
TEXT: H rspice command.
TEXT: H slowplot Stop between each graph plotted and wait for the
TEXT: H user to type return before continuing.
TEXT: H sourcepath A list of the directories to search when a
TEXT: H source command is given. The default is the
TEXT: H current directory and the standard spice library
TEXT: H (/_u_s_r/_l_o_c_a_l/_l_i_b/_s_p_i_c_e, or whatever LIBPATH is
TEXT: H #defined to in the Spice3 source.
TEXT: H spicepath The program to use for the aspice command. The
TEXT: H default is /cad/bin/spice.
TEXT: H term The _m_f_b name of the current terminal.
TEXT: H units If this is degrees, then all the trig functions
TEXT: H will use degrees instead of radians.
TEXT: H unixcom If a command isn't defined, try to execute it as
TEXT: H a UNIX command. Setting this option has the ef-
TEXT: H fect of giving a rehash command, below. This is
TEXT: H useful for people who want to use nutmeg as a
TEXT: H login shell.
TEXT: H verbose Be verbose. This is midway between echo and de-
TEXT: H bug / cpdebug.
TEXT: H diff_vntol The absolute voltage tolerance used by the diff
TEXT: H command.
TEXT: H
TEXT: H
TEXT: H width The width of the page for asciiplot and
TEXT: H print col.
TEXT: H x11lineararcs Some X11 implementations have poor arc
TEXT: H drawing. If you set this option, Spice3
TEXT: H will plot using an approximation to the
TEXT: H curve using straight lines.
TEXT: H xbrushheight The height of the brush to use if X is
TEXT: H being run.
TEXT: H xbrushwidth The width of the brush to use if X is
TEXT: H being run.
TEXT: H xfont The name of the X font to use when plot-
TEXT: H ting data and entering labels. The plot
TEXT: H may not look good if this is a
TEXT: H variable-width font.
TEXT: H
TEXT: H
TEXT: H There are several set variables that Spice3 uses but
TEXT: H Nutmeg does not. They are:
TEXT: H
TEXT: H editor The editor to use for the edit command.
TEXT: H modelcard The name of the model card (normally
TEXT: H .model).
TEXT: H noaskquit Do not check to make sure that there are
TEXT: H no circuits suspended and no plots un-
TEXT: H saved. Normally Spice3 warns the user
TEXT: H when he tries to quit if this is the
TEXT: H case.
TEXT: H noparse Don't attempt to parse input files when
TEXT: H they are read in (useful for debugging).
TEXT: H Of course, they cannot be run if they
TEXT: H are not parsed.
TEXT: H nosubckt Don't expand subcircuits.
TEXT: H renumber Renumber input lines when an input file
TEXT: H has .include's.
TEXT: H subend The card to end subcircuits (normally
TEXT: H .ends).
TEXT: H subinvoke The prefix to invoke subcircuits (nor-
TEXT: H mally x).
TEXT: H substart The card to begin subcircuits (normally
TEXT: H .subckt).
TEXT: H
TEXT: H
SUBJECT: MISCELLANEOUS
TITLE: MISCELLANEOUS
TEXT: H
TEXT: H _5._6. _M_I_S_C_E_L_L_A_N_E_O_U_S
TEXT: H
TEXT: H If there are subcircuits in the input file, Spice3
TEXT: H expands instances of them. A subcircuit is delimited by the
TEXT: H cards ._s_u_b_c_k_t and ._e_n_d_s, or whatever the value of the vari-
TEXT: H ables _s_u_b_s_t_a_r_t and _s_u_b_e_n_d is, respectively. An instance of
TEXT: H a subcircuit is created by specifying a device with type 'x'
TEXT: H - the device line is written
TEXT: H
TEXT: H xname node1 node2 ... subcktname
TEXT: H
TEXT: H
TEXT: H where the nodes are the node names that replace the formal
TEXT: H parameters on the .subckt line. All nodes that are not for-
TEXT: H mal parameters are prepended with the name given to the
TEXT: H instance and a ':', as are the names of the devices in the
TEXT: H subcircuit. If there are several nested subcircuits, node
TEXT: H and device names look like subckt1:subckt2:...:name. If the
TEXT: H variable subinvoke is set, then it is used as the prefix
TEXT: H that specifies instances of subcircuits, instead of 'x'.
TEXT: H
TEXT: H Nutmeg occasionally checks to see if it is getting
TEXT: H close to running out of space, and warns the user if this is
TEXT: H the case. (This is more likely to be useful with the SPICE
TEXT: H front end.)
TEXT: H
TEXT: H C-shell type quoting with "" and '', and backquote sub-
TEXT: H stitution may be used. Within single quotes, no further
TEXT: H substitution (like history substitution) is done, and within
TEXT: H double quotes, the words are kept together but further sub-
TEXT: H stitution is done. Any text between backquotes is replaced
TEXT: H by the result of executing the text as a command to the
TEXT: H shell.
TEXT: H
TEXT: H Tenex-style ('set filec' in the 4.3 C-shell) command,
TEXT: H filename, and keyword completion is possible: If EOF
TEXT: H (control-D) is typed after the first character on the line,
TEXT: H a list of the commands or possible arguments is printed (If
TEXT: H it is alone on the line it exits nutmeg). If escape is
TEXT: H typed, then nutmeg trys to complete what the user has
TEXT: H already typed. To get a list of all commands, the user
TEXT: H should type <space> ^D.
TEXT: H
TEXT: H The values of variables may be used in commands by
TEXT: H writing $varname where the value of the variable is to
TEXT: H appear. The special variables $$ and $< refer to the pro-
TEXT: H cess ID of the program and a line of input which is read
TEXT: H from the terminal when the variable is evaluated, respec-
TEXT: H tively. If a variable has a name of the form $&word, then
TEXT: H word is considered a vector (see above), and its value is
TEXT: H taken to be the value of the variable. If $_f_o_o is a valid
TEXT: H variable, and is of type list, then the expression
TEXT: H $_f_o_o[_l_o_w-_h_i_g_h] represents a range of elements. Either the
TEXT: H upper index or the lower may be left out, and the reverse of
TEXT: H a list may be obtained with $_f_o_o[_l_e_n-_0]. Also, the notation
TEXT: H $?_f_o_o evaluates to 1 if the variable _f_o_o is defined, 0 oth-
TEXT: H erwise, and $#_f_o_o evaluates to the number of elements in _f_o_o
TEXT: H if it is a list, 1 if it is a number or string, and 0 if it
TEXT: H is a boolean variable.
TEXT: H
TEXT: H History substitutions, similar to C-shell history sub-
TEXT: H stitutions, are also available - see the C-shell manual page
TEXT: H for all of the details.
TEXT: H
TEXT: H The characters ~, {, and } have the same effects as
TEXT: H they do in the C-Shell, i.e., home directory and alternative
TEXT: H expansion. It is possible to use the wildcard characters *,
TEXT: H ?, [, and ] also, but only if you unset noglob first. This
TEXT: H makes them rather useless for typing algebraic expressions,
TEXT: H so you should set noglob again after you are done with wild-
TEXT: H card expansion. Note that the pattern [^abc] matchs all
TEXT: H characters _e_x_c_e_p_t a, b, _a_n_d c.
TEXT: H
TEXT: H IO redirection is available - the symbols >, >>, >&,
TEXT: H >>&, and < have the same effects as in the C-shell.
TEXT: H
TEXT: H You may type multiple commands on one line, separated
TEXT: H by semicolons.
TEXT: H
TEXT: H If you want to use a different mfbcap file than the
TEXT: H default (usually ~cad/lib/mfbcap), you have to set the
TEXT: H environment variable SPICE_MFBCAP before you start nutmeg or
TEXT: H spice. The -m option and the mfbcap variable no longer
TEXT: H work.
TEXT: H
TEXT: H If X is being used, the cursor may be positioned at any
TEXT: H point on the screen when the window is up and characters
TEXT: H typed at the keyboard are added to the window at that point.
TEXT: H The window may then be sent to a printer using the xpr(1)
TEXT: H program.
TEXT: H
TEXT: H Nutmeg can be run under VAX/VMS, as well as several
TEXT: H other operating systems. Some features like command comple-
TEXT: H tion, expansion of *, ?, and [], backquote substitution, the
TEXT: H shell command, and so forth do not work.
TEXT: H
TEXT: H On some systems you have to respond to the -_m_o_r_e-
TEXT: H prompt during plot with a carriage return instead of any key
TEXT: H as you can do on UNIX.
SUBJECT: BUGS
TITLE: BUGS
TEXT: H
TEXT: H _5._7. _B_U_G_S
TEXT: H
TEXT: H The label entry facilities are primitive. You must be
TEXT: H careful to type slowly when entering labels -- nutmeg checks
TEXT: H for input once every second, and can get confused if charac-
TEXT: H ters arrive faster.
TEXT: H
TEXT: H If you redefine colors after creating a plot window
TEXT: H with X, and then cause the window to be redrawn, it does not
TEXT: H redraw in the correct colors.
TEXT: H
TEXT: H
TEXT: H When defining aliases like
TEXT: H
TEXT: H alias pdb plot db( '!:1' - '!:2' )
TEXT: H
TEXT: H
TEXT: H you must be careful to quote the argument list substitu-
TEXT: H tions in this manner. If you quote the whole argument
TEXT: H it might not work properly.
TEXT: H
TEXT: H
TEXT: H
TEXT: H In a user-defined function, the arguments cannot be
TEXT: H part of a name that uses the _p_l_o_t._v_e_c syntax. For example:
TEXT: H
TEXT: H define check(v(1)) cos(tran1.v(1))
TEXT: H
TEXT: H
TEXT: H does not work.
TEXT: H
TEXT: H
TEXT: H If you type plot all all, or otherwise use a wildcard
TEXT: H reference for one plot twice in a command, the effect is
TEXT: H unpredictable.
TEXT: H
TEXT: H The asciiplot command doesn't deal with log scales or
TEXT: H the delta keywords.
TEXT: H
TEXT: H
TEXT: H Often the names of terminals recognized by MFB are dif-
TEXT: H ferent from those in /etc/termcap. Thus you may have to
TEXT: H reset your terminal type with the command
TEXT: H
TEXT: H set term = termname
TEXT: H
TEXT: H
TEXT: H where termname is the name in the mfbcap file.
TEXT: H
TEXT: H
TEXT: H The hardcopy command is useless on VMS and other sys-
TEXT: H tems without the plot command, unless the user has a program
TEXT: H that understands _p_l_o_t(_5) format.
TEXT: H
TEXT: H Spice3 recognizes all the notations used in SPICE2
TEXT: H .plot cards, and translates vp(1) into ph(v(1)), and so
TEXT: H forth. However, if there are spaces in these names it won't
TEXT: H work. Hence v(1, 2) and (-.5, .5) aren't recognized.
TEXT: H
TEXT: H BJTs can have either 3 or 4 nodes, which makes it dif-
TEXT: H ficult for the subcircuit expansion routines to decide what
TEXT: H to rename. If the fourth parameter has been declared as a
TEXT: H model name, then it is assumed that there are 3 nodes, oth-
TEXT: H erwise it is considered a node.
TEXT: H
TEXT: H The @name[param] notation might not work with trace,
TEXT: H iplot, etc. yet.
TEXT: H
TEXT: H The first line of a command file (except for the ._s_p_i_-
TEXT: H _c_e_i_n_i_t file) should be a comment, otherwise SPICE may create
TEXT: H an empty circuit.
TEXT: H
TEXT: H Files specified on the command line are read before
TEXT: H .spiceinit is read.
SUBJECT: BIBLIOGRAPHY
TITLE: BIBLIOGRAPHY
TEXT: H
TEXT: H _6. _B_I_B_L_I_O_G_R_A_P_H_Y
TEXT: H
TEXT: H
TEXT: H [1] A. Vladimirescu and S. Liu, _T_h_e _S_i_m_u_l_a_t_i_o_n _o_f _M_O_S
TEXT: H _I_n_t_e_g_r_a_t_e_d _C_i_r_c_u_i_t_s _U_s_i_n_g _S_P_I_C_E_2
TEXT: H ERL Memo No. ERL M80/7, Electronics Research Laboratory
TEXT: H University of California, Berkeley, October 1980
TEXT: H
TEXT: H [2] T. Sakurai and A. R. Newton, _A _S_i_m_p_l_e _M_O_S_F_E_T _M_o_d_e_l _f_o_r
TEXT: H _C_i_r_c_u_i_t _A_n_a_l_y_s_i_s _a_n_d _i_t_s _a_p_p_l_i_c_a_t_i_o_n _t_o _C_M_O_S _g_a_t_e _d_e_l_a_y
TEXT: H _a_n_a_l_y_s_i_s _a_n_d _s_e_r_i_e_s-_c_o_n_n_e_c_t_e_d _M_O_S_F_E_T _S_t_r_u_c_t_u_r_e
TEXT: H ERL Memo No. ERL M90/19, Electronics Research Labora-
TEXT: H tory,
TEXT: H University of California, Berkeley, March 1990
TEXT: H
TEXT: H [3] B. J. Sheu, D. L. Scharfetter, and P. K. Ko, _S_P_I_C_E_2
TEXT: H _I_m_p_l_e_m_e_n_t_a_t_i_o_n _o_f _B_S_I_M
TEXT: H ERL Memo No. ERL M85/42, Electronics Research Labora-
TEXT: H tory
TEXT: H University of California, Berkeley, May 1985
TEXT: H
TEXT: H [4] J. R. Pierret, _A _M_O_S _P_a_r_a_m_e_t_e_r _E_x_t_r_a_c_t_i_o_n _P_r_o_g_r_a_m _f_o_r
TEXT: H _t_h_e _B_S_I_M _M_o_d_e_l
TEXT: H ERL Memo Nos. ERL M84/99 and M84/100, Electronics
TEXT: H Research Laboratory
TEXT: H University of California, Berkeley, November 1984
TEXT: H
TEXT: H [5] Min-Chie Jeng, _D_e_s_i_g_n _a_n_d _M_o_d_e_l_i_n_g _o_f _D_e_e_p-
TEXT: H _S_u_b_m_i_c_r_o_m_e_t_e_r _M_O_S_F_E_T_S_s
TEXT: H ERL Memo Nos. ERL M90/90, Electronics Research Labora-
TEXT: H tory
TEXT: H University of California, Berkeley, October 1990
TEXT: H
TEXT: H [6] Soyeon Park, _A_n_a_l_y_s_i_s _a_n_d _S_P_I_C_E _i_m_p_l_e_m_e_n_t_a_t_i_o_n _o_f _H_i_g_h
TEXT: H _T_e_m_p_e_r_a_t_u_r_e _E_f_f_e_c_t_s _o_n _M_O_S_F_E_T,
TEXT: H Master's thesis, University of California, Berkeley,
TEXT: H December 1986.
TEXT: H
TEXT: H [7] Clement Szeto, _S_i_m_u_l_a_t_o_r _o_f _T_e_m_p_e_r_a_t_u_r_e _E_f_f_e_c_t_s _i_n _M_O_S_-
TEXT: H _F_E_T_s (_S_T_E_I_M),
TEXT: H Master's thesis, University of California, Berkeley,
TEXT: H May 1988.
TEXT: H
TEXT: H [8] J.S. Roychowdhury and D.O. Pederson, _E_f_f_i_c_i_e_n_t _T_r_a_n_-
TEXT: H _s_i_e_n_t _S_i_m_u_l_a_t_i_o_n _o_f _L_o_s_s_y _I_n_t_e_r_c_o_n_n_e_c_t,
TEXT: H Proc. of the 28th ACM/IEEE Design Automation Confer-
TEXT: H ence, June 17-21 1991, San Francisco
TEXT: H
TEXT: H [9] A. E. Parker and D. J. Skellern, _A_n _I_m_p_r_o_v_e_d _F_E_T _M_o_d_e_l
TEXT: H _f_o_r _C_o_m_p_u_t_e_r _S_i_m_u_l_a_t_o_r_s,
TEXT: H IEEE Trans CAD, vol. 9, no. 5, pp. 551-553, May 1990.
TEXT: H
TEXT: H [10] R. Saleh and A. Yang, Editors, _S_i_m_u_l_a_t_i_o_n _a_n_d _M_o_d_e_l_i_n_g,
TEXT: H IEEE Circuits and Devices, vol. 8, no. 3, pp. 7-8 and
TEXT: H 49, May 1992
TEXT: H
TEXT: H [11] H.Statz et al., _G_a_A_s _F_E_T _D_e_v_i_c_e _a_n_d _C_i_r_c_u_i_t _S_i_m_u_l_a_t_i_o_n
TEXT: H _i_n _S_P_I_C_E,
TEXT: H IEEE Transactions on Electron Devices, V34, Number 2,
TEXT: H February, 1987 pp160-169.
SUBJECT: APPENDIX A
TITLE: APPENDIX A: EXAMPLE CIRCUITS
TEXT: H
TEXT: H _A. _A_P_P_E_N_D_I_X _A: _E_X_A_M_P_L_E _C_I_R_C_U_I_T_S
TEXT: H
TEXT: H
SUBTOPIC: NGSPICE:Circuit 1
SUBTOPIC: NGSPICE:Circuit 2
SUBTOPIC: NGSPICE:Circuit 3
SUBTOPIC: NGSPICE:Circuit 4
SUBTOPIC: NGSPICE:Circuit 5
SUBJECT: Circuit 1
TITLE: Circuit 1: Differential Pair
TEXT: H
TEXT: H _A._1. _C_i_r_c_u_i_t _1: _D_i_f_f_e_r_e_n_t_i_a_l _P_a_i_r
TEXT: H
TEXT: H
TEXT: H The following deck determines the dc operating point of
TEXT: H a simple differential pair. In addition, the ac small-signal
TEXT: H response is computed over the frequency range 1Hz to
TEXT: H 100MEGHz.
TEXT: H
TEXT: H SIMPLE DIFFERENTIAL PAIR
TEXT: H VCC 7 0 12
TEXT: H VEE 8 0 -12
TEXT: H VIN 1 0 AC 1
TEXT: H RS1 1 2 1K
TEXT: H RS2 6 0 1K
TEXT: H Q1 3 2 4 MOD1
TEXT: H Q2 5 6 4 MOD1
TEXT: H RC1 7 3 10K
TEXT: H RC2 7 5 10K
TEXT: H RE 4 8 10K
TEXT: H .MODEL MOD1 NPN BF=50 VAF=50 IS=1.E-12 RB=100 CJC=.5PF TF=.6NS
TEXT: H .TF V(5) VIN
TEXT: H .AC DEC 10 1 100MEG
TEXT: H .END
TEXT: H
TEXT: H
TEXT: H
TEXT: H
SUBJECT: Circuit 2
TITLE: Circuit 2: MOSFET Characterization
TEXT: H
TEXT: H _A._2. _C_i_r_c_u_i_t _2: _M_O_S_F_E_T _C_h_a_r_a_c_t_e_r_i_z_a_t_i_o_n
TEXT: H
TEXT: H The following deck computes the output characteristics of a
TEXT: H MOSFET device over the range 0-10V for VDS and 0-5V for VGS.
TEXT: H
TEXT: H
TEXT: H MOS OUTPUT CHARACTERISTICS
TEXT: H .OPTIONS NODE NOPAGE
TEXT: H VDS 3 0
TEXT: H VGS 2 0
TEXT: H M1 1 2 0 0 MOD1 L=4U W=6U AD=10P AS=10P
TEXT: H * VIDS MEASURES ID, WE COULD HAVE USED VDS, BUT ID WOULD BE NEGATIVE
TEXT: H VIDS 3 1
TEXT: H .MODEL MOD1 NMOS VTO=-2 NSUB=1.0E15 UO=550
TEXT: H .DC VDS 0 10 .5 VGS 0 5 1
TEXT: H .END
TEXT: H
TEXT: H
TEXT: H
TEXT: H
SUBJECT: Circuit 3
TITLE: Circuit 3: RTL Inverter
TEXT: H
TEXT: H _A._3. _C_i_r_c_u_i_t _3: _R_T_L _I_n_v_e_r_t_e_r
TEXT: H
TEXT: H
TEXT: H The following deck determines the dc transfer curve and
TEXT: H the transient pulse response of a simple RTL inverter. The
TEXT: H input is a pulse from 0 to 5 Volts with delay, rise, and
TEXT: H fall times of 2ns and a pulse width of 30ns. The transient
TEXT: H interval is 0 to 100ns, with printing to be done every
TEXT: H nanosecond.
TEXT: H
TEXT: H
TEXT: H SIMPLE RTL INVERTER
TEXT: H VCC 4 0 5
TEXT: H VIN 1 0 PULSE 0 5 2NS 2NS 2NS 30NS
TEXT: H RB 1 2 10K
TEXT: H Q1 3 2 0 Q1
TEXT: H RC 3 4 1K
TEXT: H .MODEL Q1 NPN BF 20 RB 100 TF .1NS CJC 2PF
TEXT: H .DC VIN 0 5 0.1
TEXT: H .TRAN 1NS 100NS
TEXT: H .END
TEXT: H
TEXT: H
TEXT: H
SUBJECT: Circuit 4
TITLE: Circuit 4: Four-Bit Binary Adder
TEXT: H
TEXT: H _A._4. _C_i_r_c_u_i_t _4: _F_o_u_r-_B_i_t _B_i_n_a_r_y _A_d_d_e_r
TEXT: H
TEXT: H
TEXT: H The following deck simulates a four-bit binary adder,
TEXT: H using several subcircuits to describe various pieces of the
TEXT: H overall circuit.
TEXT: H
TEXT: H
TEXT: H ADDER - 4 BIT ALL-NAND-GATE BINARY ADDER
TEXT: H
TEXT: H *** SUBCIRCUIT DEFINITIONS
TEXT: H .SUBCKT NAND 1 2 3 4
TEXT: H * NODES: INPUT(2), OUTPUT, VCC
TEXT: H Q1 9 5 1 QMOD
TEXT: H D1CLAMP 0 1 DMOD
TEXT: H Q2 9 5 2 QMOD
TEXT: H D2CLAMP 0 2 DMOD
TEXT: H RB 4 5 4K
TEXT: H R1 4 6 1.6K
TEXT: H Q3 6 9 8 QMOD
TEXT: H R2 8 0 1K
TEXT: H RC 4 7 130
TEXT: H Q4 7 6 10 QMOD
TEXT: H DVBEDROP 10 3 DMOD
TEXT: H Q5 3 8 0 QMOD
TEXT: H .ENDS NAND
TEXT: H
TEXT: H .SUBCKT ONEBIT 1 2 3 4 5 6
TEXT: H * NODES: INPUT(2), CARRY-IN, OUTPUT, CARRY-OUT, VCC
TEXT: H X1 1 2 7 6 NAND
TEXT: H X2 1 7 8 6 NAND
TEXT: H X3 2 7 9 6 NAND
TEXT: H X4 8 9 10 6 NAND
TEXT: H X5 3 10 11 6 NAND
TEXT: H X6 3 11 12 6 NAND
TEXT: H X7 10 11 13 6 NAND
TEXT: H X8 12 13 4 6 NAND
TEXT: H X9 11 7 5 6 NAND
TEXT: H .ENDS ONEBIT
TEXT: H
TEXT: H .SUBCKT TWOBIT 1 2 3 4 5 6 7 8 9
TEXT: H * NODES: INPUT - BIT0(2) / BIT1(2), OUTPUT - BIT0 / BIT1,
TEXT: H * CARRY-IN, CARRY-OUT, VCC
TEXT: H X1 1 2 7 5 10 9 ONEBIT
TEXT: H X2 3 4 10 6 8 9 ONEBIT
TEXT: H .ENDS TWOBIT
TEXT: H
TEXT: H .SUBCKT FOURBIT 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15
TEXT: H * NODES: INPUT - BIT0(2) / BIT1(2) / BIT2(2) / BIT3(2),
TEXT: H * OUTPUT - BIT0 / BIT1 / BIT2 / BIT3, CARRY-IN, CARRY-OUT, VCC
TEXT: H X1 1 2 3 4 9 10 13 16 15 TWOBIT
TEXT: H X2 5 6 7 8 11 12 16 14 15 TWOBIT
TEXT: H .ENDS FOURBIT
TEXT: H
TEXT: H *** DEFINE NOMINAL CIRCUIT
TEXT: H .MODEL DMOD D
TEXT: H .MODEL QMOD NPN(BF=75 RB=100 CJE=1PF CJC=3PF)
TEXT: H VCC 99 0 DC 5V
TEXT: H VIN1A 1 0 PULSE(0 3 0 10NS 10NS 10NS 50NS)
TEXT: H VIN1B 2 0 PULSE(0 3 0 10NS 10NS 20NS 100NS)
TEXT: H VIN2A 3 0 PULSE(0 3 0 10NS 10NS 40NS 200NS)
TEXT: H VIN2B 4 0 PULSE(0 3 0 10NS 10NS 80NS 400NS)
TEXT: H VIN3A 5 0 PULSE(0 3 0 10NS 10NS 160NS 800NS)
TEXT: H VIN3B 6 0 PULSE(0 3 0 10NS 10NS 320NS 1600NS)
TEXT: H VIN4A 7 0 PULSE(0 3 0 10NS 10NS 640NS 3200NS)
TEXT: H VIN4B 8 0 PULSE(0 3 0 10NS 10NS 1280NS 6400NS)
TEXT: H X1 1 2 3 4 5 6 7 8 9 10 11 12 0 13 99 FOURBIT
TEXT: H RBIT0 9 0 1K
TEXT: H RBIT1 10 0 1K
TEXT: H RBIT2 11 0 1K
TEXT: H RBIT3 12 0 1K
TEXT: H RCOUT 13 0 1K
TEXT: H
TEXT: H *** (FOR THOSE WITH MONEY (AND MEMORY) TO BURN)
TEXT: H .TRAN 1NS 6400NS
TEXT: H .END
TEXT: H
TEXT: H
TEXT: H
SUBJECT: Circuit 5
TITLE: Circuit 5: Transmission-Line Inverter
TEXT: H
TEXT: H _A._5. _C_i_r_c_u_i_t _5: _T_r_a_n_s_m_i_s_s_i_o_n-_L_i_n_e _I_n_v_e_r_t_e_r
TEXT: H
TEXT: H
TEXT: H The following deck simulates a transmission-line in-
TEXT: H verter. Two transmission-line elements are required since
TEXT: H two propagation modes are excited. In the case of a coaxial
TEXT: H line, the first line (T1) models the inner conductor with
TEXT: H respect to the shield, and the second line (T2) models the
TEXT: H shield with respect to the outside world.
TEXT: H
TEXT: H
TEXT: H TRANSMISSION-LINE INVERTER
TEXT: H V1 1 0 PULSE(0 1 0 0.1N)
TEXT: H R1 1 2 50
TEXT: H X1 2 0 0 4 TLINE
TEXT: H R2 4 0 50
TEXT: H
TEXT: H .SUBCKT TLINE 1 2 3 4
TEXT: H T1 1 2 3 4 Z0=50 TD=1.5NS
TEXT: H T2 2 0 4 0 Z0=100 TD=1NS
TEXT: H .ENDS TLINE
TEXT: H
TEXT: H .TRAN 0.1NS 20NS
TEXT: H .END
TEXT: H
TEXT: H
SUBJECT: APPENDIX B
TITLE: APPENDIX B: MODEL AND DEVICE PARAMETERS
TEXT: H
TEXT: H _B. _A_P_P_E_N_D_I_X _B: _M_O_D_E_L _A_N_D _D_E_V_I_C_E _P_A_R_A_M_E_T_E_R_S
TEXT: H
TEXT: H The following tables summarize the parameters available
TEXT: H on each of the devices and models in (note that for some
TEXT: H systems with limited memory, output parameters are not
TEXT: H available). There are several tables for each type of dev-
TEXT: H ice supported by . Input parameters to instances and models
TEXT: H are parameters that can occur on an instance or model defin-
TEXT: H ition line in the form "keyword=value" where "keyword" is
TEXT: H the parameter name as given in the tables. Default input
TEXT: H parameters (such as the resistance of a resistor or the
TEXT: H capacitance of a capacitor) obviously do not need the key-
TEXT: H word specified.
TEXT: H
TEXT: H Output parameters are those additional parameters which
TEXT: H are available for many types of instances for the output of
TEXT: H operating point and debugging information. These parameters
TEXT: H are specified as "@device[keyword]" and are available for
TEXT: H the most recent point computed or, if specified in a ".save"
TEXT: H statement, for an entire simulation as a normal output vec-
TEXT: H tor. Thus, to monitor the gate-to-source capacitance of a
TEXT: H MOSFET, a command
TEXT: H
TEXT: H save @m1[cgs]
TEXT: H
TEXT: H given before a transient simulation causes the specified
TEXT: H capacitance value to be saved at each timepoint, and a sub-
TEXT: H sequent command such as
TEXT: H
TEXT: H plot @m1[cgs]
TEXT: H
TEXT: H produces the desired plot. (Note that the show command does
TEXT: H not use this format).
TEXT: H
TEXT: H Some variables are listed as both input and output, and
TEXT: H their output simply returns the previously input value, or
TEXT: H the default value after the simulation has been run. Some
TEXT: H parameter are input only because the output system can not
TEXT: H handle variables of the given type yet, or the need for them
TEXT: H as output variables has not been apparent. Many such input
TEXT: H variables are available as output variables in a different
TEXT: H format, such as the initial condition vectors that can be
TEXT: H retrieved as individual initial condition values. Finally,
TEXT: H internally derived values are output only and are provided
TEXT: H for debugging and operating point output purposes.
TEXT: H
TEXT: H Please note that these tables do not provide the
TEXT: H detailed information available about the parameters provided
TEXT: H in the section on each device and model, but are provided as
TEXT: H a quick reference guide.
SUBTOPIC: NGSPICE:URC
SUBTOPIC: NGSPICE:ASRC
SUBTOPIC: NGSPICE:BJT
SUBTOPIC: NGSPICE:BSIM1
SUBTOPIC: NGSPICE:BSIM2
SUBTOPIC: NGSPICE:Capacitor
SUBTOPIC: NGSPICE:CCCS
SUBTOPIC: NGSPICE:CCVS
SUBTOPIC: NGSPICE:CSwitch
SUBTOPIC: NGSPICE:Diode
SUBTOPIC: NGSPICE:Inductor
SUBTOPIC: NGSPICE:mutual
SUBTOPIC: NGSPICE:Isource
SUBTOPIC: NGSPICE:JFET
SUBTOPIC: NGSPICE:LTRA
SUBTOPIC: NGSPICE:MES
SUBTOPIC: NGSPICE:Mos1
SUBTOPIC: NGSPICE:Mos2
SUBTOPIC: NGSPICE:Mos3
SUBTOPIC: NGSPICE:Mos6
SUBTOPIC: NGSPICE:Resistor
SUBTOPIC: NGSPICE:Switch
SUBTOPIC: NGSPICE:Tranline
SUBTOPIC: NGSPICE:VCCS
SUBTOPIC: NGSPICE:VCVS
SUBTOPIC: NGSPICE:Vsource
SUBJECT: URC
TITLE: URC: Uniform R.C. line
TEXT: H
TEXT: H _B._1. _U_R_C: _U_n_i_f_o_r_m _R._C. _l_i_n_e
TEXT: H
TEXT: H ------------------------------------------------------------
TEXT: H| URC - instance parameters (input-output) |
TEXT: H|-----------------------------------------------------------+
TEXT: H| l Length of transmission line |
TEXT: H| n Number of lumps |
TEXT: H ------------------------------------------------------------
TEXT: H
TEXT: H
TEXT: H ------------------------------------------------------------
TEXT: H| URC - instance parameters (output-only) |
TEXT: H|-----------------------------------------------------------+
TEXT: H| pos_node Positive node of URC |
TEXT: H| neg_node Negative node of URC |
TEXT: H| gnd Ground node of URC |
TEXT: H ------------------------------------------------------------
TEXT: H
TEXT: H
TEXT: H ------------------------------------------------------------
TEXT: H| URC - model parameters (input-only) |
TEXT: H|-----------------------------------------------------------+
TEXT: H| urc Uniform R.C. line model |
TEXT: H ------------------------------------------------------------
TEXT: H
TEXT: H
TEXT: H ------------------------------------------------------------
TEXT: H| URC - model parameters (input-output) |
TEXT: H|-----------------------------------------------------------+
TEXT: H| k Propagation constant |
TEXT: H| fmax Maximum frequency of interest |
TEXT: H| rperl Resistance per unit length |
TEXT: H| cperl Capacitance per unit length |
TEXT: H| isperl Saturation current per length |
TEXT: H| rsperl Diode resistance per length |
TEXT: H ------------------------------------------------------------
TEXT: H
SUBJECT: ASRC
TITLE: ASRC: Arbitrary Source
TEXT: H
TEXT: H _B._2. _A_S_R_C: _A_r_b_i_t_r_a_r_y _S_o_u_r_c_e
TEXT: H
TEXT: H ------------------------------------------------------------
TEXT: H| ASRC - instance parameters (input-only) |
TEXT: H|-----------------------------------------------------------+
TEXT: H| i Current source |
TEXT: H| v Voltage source |
TEXT: H ------------------------------------------------------------
TEXT: H
TEXT: H
TEXT: H ------------------------------------------------------------
TEXT: H| ASRC - instance parameters (output-only) |
TEXT: H|-----------------------------------------------------------+
TEXT: H| i Current through source |
TEXT: H| v Voltage across source |
TEXT: H| pos_node Positive Node |
TEXT: H| neg_node Negative Node |
TEXT: H ------------------------------------------------------------
SUBJECT: BJT
TITLE: BJT: Bipolar Junction Transistor
TEXT: H
TEXT: H _B._3. _B_J_T: _B_i_p_o_l_a_r _J_u_n_c_t_i_o_n _T_r_a_n_s_i_s_t_o_r
TEXT: H
TEXT: H ------------------------------------------------------------
TEXT: H| BJT - instance parameters (input-only) |
TEXT: H|-----------------------------------------------------------+
TEXT: H| ic Initial condition vector |
TEXT: H ------------------------------------------------------------
TEXT: H
TEXT: H
TEXT: H ------------------------------------------------------------
TEXT: H| BJT - instance parameters (input-output) |
TEXT: H|-----------------------------------------------------------+
TEXT: H| off Device initially off |
TEXT: H| icvbe Initial B-E voltage |
TEXT: H| icvce Initial C-E voltage |
TEXT: H| area Area factor |
TEXT: H| temp instance temperature |
TEXT: H ------------------------------------------------------------
TEXT: H
TEXT: H
TEXT: H ------------------------------------------------------------
TEXT: H| BJT - instance parameters (output-only) |
TEXT: H|-----------------------------------------------------------+
TEXT: H| colnode Number of collector node |
TEXT: H| basenode Number of base node |
TEXT: H| emitnode Number of emitter node |
TEXT: H| substnode Number of substrate node |
TEXT: H ------------------------------------------------------------
TEXT: H| colprimenode Internal collector node |
TEXT: H| baseprimenode Internal base node |
TEXT: H| emitprimenode Internal emitter node |
TEXT: H| ic Current at collector node |
TEXT: H|-----------------------------------------------------------+
TEXT: H ib Current at base node
TEXT: H| ie Emitter current |
TEXT: H| is Substrate current |
TEXT: H| vbe B-E voltage |
TEXT: H ------------------------------------------------------------
TEXT: H| vbc B-C voltage |
TEXT: H| gm Small signal transconductance |
TEXT: H| gpi Small signal input conductance - pi |
TEXT: H| gmu Small signal conductance - mu |
TEXT: H|-----------------------------------------------------------+
TEXT: H| gx Conductance from base to internal base |
TEXT: H| go Small signal output conductance |
TEXT: H| geqcb d(Ibe)/d(Vbc) |
TEXT: H| gccs Internal C-S cap. equiv. cond. |
TEXT: H ------------------------------------------------------------
TEXT: H| geqbx Internal C-B-base cap. equiv. cond. |
TEXT: H| cpi Internal base to emitter capactance |
TEXT: H| cmu Internal base to collector capactiance |
TEXT: H| cbx Base to collector capacitance |
TEXT: H|-----------------------------------------------------------+
TEXT: H| ccs Collector to substrate capacitance |
TEXT: H| cqbe Cap. due to charge storage in B-E jct. |
TEXT: H| cqbc Cap. due to charge storage in B-C jct. |
TEXT: H| cqcs Cap. due to charge storage in C-S jct. |
TEXT: H| cqbx Cap. due to charge storage in B-X jct. |
TEXT: H| _c_o_n_t_i_n_u_e_d |
TEXT: H ------------------------------------------------------------
TEXT: H
TEXT: H
TEXT: H ------------------------------------------------------------
TEXT: H| BJT - instance output-only parameters - _c_o_n_t_i_n_u_e_d
TEXT: H|-----------------------------------------------------------+
TEXT: H| cexbc Total Capacitance in B-X junction |
TEXT: H| qbe Charge storage B-E junction |
TEXT: H| qbc Charge storage B-C junction |
TEXT: H| qcs Charge storage C-S junction |
TEXT: H| qbx Charge storage B-X junction |
TEXT: H| p Power dissipation |
TEXT: H ------------------------------------------------------------
TEXT: H
TEXT: H
TEXT: H ------------------------------------------------------------
TEXT: H| BJT - model parameters (input-output) |
TEXT: H|-----------------------------------------------------------+
TEXT: H| npn NPN type device |
TEXT: H| pnp PNP type device |
TEXT: H| is Saturation Current |
TEXT: H| bf Ideal forward beta |
TEXT: H ------------------------------------------------------------
TEXT: H| nf Forward emission coefficient |
TEXT: H| vaf Forward Early voltage |
TEXT: H| va (null) |
TEXT: H| ikf Forward beta roll-off corner current |
TEXT: H|-----------------------------------------------------------+
TEXT: H| ik (null) |
TEXT: H| ise B-E leakage saturation current |
TEXT: H| ne B-E leakage emission coefficient |
TEXT: H| br Ideal reverse beta |
TEXT: H ------------------------------------------------------------
TEXT: H| nr Reverse emission coefficient |
TEXT: H| var Reverse Early voltage |
TEXT: H| vb (null) |
TEXT: H| ikr reverse beta roll-off corner current |
TEXT: H|-----------------------------------------------------------+
TEXT: H| isc B-C leakage saturation current |
TEXT: H| nc B-C leakage emission coefficient |
TEXT: H| rb Zero bias base resistance |
TEXT: H| irb Current for base resistance=(rb+rbm)/2 |
TEXT: H ------------------------------------------------------------
TEXT: H| rbm Minimum base resistance |
TEXT: H| re Emitter resistance |
TEXT: H| rc Collector resistance |
TEXT: H| cje Zero bias B-E depletion capacitance |
TEXT: H|-----------------------------------------------------------+
TEXT: H| vje B-E built in potential |
TEXT: H| pe (null) |
TEXT: H| mje B-E junction grading coefficient |
TEXT: H| me (null) |
TEXT: H ------------------------------------------------------------
TEXT: H| tf Ideal forward transit time |
TEXT: H| xtf Coefficient for bias dependence of TF |
TEXT: H| vtf Voltage giving VBC dependence of TF |
TEXT: H| itf High current dependence of TF |
TEXT: H|-----------------------------------------------------------+
TEXT: H| ptf Excess phase |
TEXT: H| cjc Zero bias B-C depletion capacitance |
TEXT: H| vjc B-C built in potential |
TEXT: H| _c_o_n_t_i_n_u_e_d |
TEXT: H ------------------------------------------------------------
TEXT: H
TEXT: H
TEXT: H ------------------------------------------------------------
TEXT: H| BJT - model input-output parameters - _c_o_n_t_i_n_u_e_d
TEXT: H|-----------------------------------------------------------+
TEXT: H| pc (null) |
TEXT: H| mjc B-C junction grading coefficient |
TEXT: H| mc (null) |
TEXT: H| xcjc Fraction of B-C cap to internal base |
TEXT: H ------------------------------------------------------------
TEXT: H| tr Ideal reverse transit time |
TEXT: H| cjs Zero bias C-S capacitance |
TEXT: H| ccs Zero bias C-S capacitance |
TEXT: H| vjs Substrate junction built in potential |
TEXT: H|-----------------------------------------------------------+
TEXT: H| ps (null) |
TEXT: H| mjs Substrate junction grading coefficient |
TEXT: H| ms (null) |
TEXT: H| xtb Forward and reverse beta temp. exp. |
TEXT: H ------------------------------------------------------------
TEXT: H| eg Energy gap for IS temp. dependency |
TEXT: H| xti Temp. exponent for IS |
TEXT: H| fc Forward bias junction fit parameter |
TEXT: H| tnom Parameter measurement temperature |
TEXT: H| kf Flicker Noise Coefficient |
TEXT: H| af Flicker Noise Exponent |
TEXT: H ------------------------------------------------------------
TEXT: H
TEXT: H
TEXT: H ------------------------------------------------------------
TEXT: H| BJT - model parameters (output-only) |
TEXT: H|-----------------------------------------------------------+
TEXT: H| type NPN or PNP |
TEXT: H| invearlyvoltf Inverse early voltage:forward |
TEXT: H| invearlyvoltr Inverse early voltage:reverse |
TEXT: H| invrollofff Inverse roll off - forward |
TEXT: H ------------------------------------------------------------
TEXT: H| invrolloffr Inverse roll off - reverse |
TEXT: H| collectorconduct Collector conductance |
TEXT: H| emitterconduct Emitter conductance |
TEXT: H| transtimevbcfact Transit time VBC factor |
TEXT: H| excessphasefactor Excess phase fact. |
TEXT: H ------------------------------------------------------------
TEXT: H
SUBJECT: BSIM1
TITLE: BSIM1: Berkeley Short Channel IGFET Model
TEXT: H
TEXT: H _B._4. _B_S_I_M_1: _B_e_r_k_e_l_e_y _S_h_o_r_t _C_h_a_n_n_e_l _I_G_F_E_T _M_o_d_e_l
TEXT: H
TEXT: H ------------------------------------------------------------
TEXT: H| BSIM1 - instance parameters (input-only) |
TEXT: H|-----------------------------------------------------------+
TEXT: H| ic Vector of DS,GS,BS initial voltages |
TEXT: H ------------------------------------------------------------
TEXT: H
TEXT: H
TEXT: H ------------------------------------------------------------
TEXT: H| BSIM1 - instance parameters (input-output) |
TEXT: H|-----------------------------------------------------------+
TEXT: H| l Length |
TEXT: H| w Width |
TEXT: H| ad Drain area |
TEXT: H| as Source area |
TEXT: H ------------------------------------------------------------
TEXT: H| pd Drain perimeter |
TEXT: H| ps Source perimeter |
TEXT: H| nrd Number of squares in drain |
TEXT: H| nrs Number of squares in source |
TEXT: H|-----------------------------------------------------------+
TEXT: H| off Device is initially off |
TEXT: H| vds Initial D-S voltage |
TEXT: H| vgs Initial G-S voltage |
TEXT: H| vbs Initial B-S voltage |
TEXT: H ------------------------------------------------------------
TEXT: H
TEXT: H
TEXT: H ------------------------------------------------------------
TEXT: H| BSIM1 - model parameters (input-only) |
TEXT: H|-----------------------------------------------------------+
TEXT: H| nmos Flag to indicate NMOS |
TEXT: H| pmos Flag to indicate PMOS |
TEXT: H ------------------------------------------------------------
TEXT: H
TEXT: H
TEXT: H ------------------------------------------------------------
TEXT: H| BSIM1 - model parameters (input-output) |
TEXT: H|-----------------------------------------------------------+
TEXT: H| vfb Flat band voltage |
TEXT: H lvfb Length dependence of vfb
TEXT: H| wvfb Width dependence of vfb |
TEXT: H| phi Strong inversion surface potential |
TEXT: H ------------------------------------------------------------
TEXT: H| lphi Length dependence of phi |
TEXT: H| wphi Width dependence of phi |
TEXT: H| k1 Bulk effect coefficient 1 |
TEXT: H| lk1 Length dependence of k1 |
TEXT: H|-----------------------------------------------------------+
TEXT: H| wk1 Width dependence of k1 |
TEXT: H| k2 Bulk effect coefficient 2 |
TEXT: H| lk2 Length dependence of k2 |
TEXT: H| wk2 Width dependence of k2 |
TEXT: H ------------------------------------------------------------
TEXT: H| eta VDS dependence of threshold voltage |
TEXT: H| leta Length dependence of eta |
TEXT: H| weta Width dependence of eta |
TEXT: H| x2e VBS dependence of eta |
TEXT: H| lx2e Length dependence of x2e |
TEXT: H| _c_o_n_t_i_n_u_e_d |
TEXT: H ------------------------------------------------------------
TEXT: H
TEXT: H
TEXT: H ---------------------------------------------------------------------
TEXT: H| BSIM1 - model input-output parameters - _c_o_n_t_i_n_u_e_d|
TEXT: H|--------------------------------------------------------------------+
TEXT: H|wx2e Width dependence of x2e |
TEXT: H|x3e VDS dependence of eta |
TEXT: H|lx3e Length dependence of x3e |
TEXT: H|wx3e Width dependence of x3e |
TEXT: H ---------------------------------------------------------------------
TEXT: H|dl Channel length reduction in um |
TEXT: H|dw Channel width reduction in um |
TEXT: H|muz Zero field mobility at VDS=0 VGS=VTH |
TEXT: H|x2mz VBS dependence of muz |
TEXT: H|--------------------------------------------------------------------+
TEXT: H|lx2mz Length dependence of x2mz |
TEXT: H|wx2mz Width dependence of x2mz |
TEXT: H mus Mobility at VDS=VDD VGS=VTH, channel length modulation
TEXT: H|lmus Length dependence of mus |
TEXT: H ---------------------------------------------------------------------
TEXT: H|wmus Width dependence of mus |
TEXT: H|x2ms VBS dependence of mus |
TEXT: H|lx2ms Length dependence of x2ms |
TEXT: H|wx2ms Width dependence of x2ms |
TEXT: H|--------------------------------------------------------------------+
TEXT: H|x3ms VDS dependence of mus |
TEXT: H|lx3ms Length dependence of x3ms |
TEXT: H|wx3ms Width dependence of x3ms |
TEXT: H|u0 VGS dependence of mobility |
TEXT: H ---------------------------------------------------------------------
TEXT: H|lu0 Length dependence of u0 |
TEXT: H|wu0 Width dependence of u0 |
TEXT: H|x2u0 VBS dependence of u0 |
TEXT: H|lx2u0 Length dependence of x2u0 |
TEXT: H|--------------------------------------------------------------------+
TEXT: H|wx2u0 Width dependence of x2u0 |
TEXT: H|u1 VDS depence of mobility, velocity saturation |
TEXT: H|lu1 Length dependence of u1 |
TEXT: H|wu1 Width dependence of u1 |
TEXT: H ---------------------------------------------------------------------
TEXT: H|x2u1 VBS depence of u1 |
TEXT: H|lx2u1 Length depence of x2u1 |
TEXT: H|wx2u1 Width depence of x2u1 |
TEXT: H|x3u1 VDS depence of u1 |
TEXT: H|--------------------------------------------------------------------+
TEXT: H|lx3u1 Length dependence of x3u1 |
TEXT: H|wx3u1 Width depence of x3u1 |
TEXT: H|n0 Subthreshold slope |
TEXT: H ln0 Length dependence of n0
TEXT: H ---------------------------------------------------------------------
TEXT: H|wn0 Width dependence of n0 |
TEXT: H|nb VBS dependence of subthreshold slope |
TEXT: H|lnb Length dependence of nb |
TEXT: H|wnb Width dependence of nb |
TEXT: H|--------------------------------------------------------------------+
TEXT: H|nd VDS dependence of subthreshold slope |
TEXT: H|lnd Length dependence of nd |
TEXT: H|wnd Width dependence of nd |
TEXT: H| _c_o_n_t_i_n_u_e_d |
TEXT: H ---------------------------------------------------------------------
TEXT: H
TEXT: H
TEXT: H ---------------------------------------------------------------------------
TEXT: H| BSIM1 - model input-output parameters - _c_o_n_t_i_n_u_e_d |
TEXT: H|--------------------------------------------------------------------------+
TEXT: H|tox Gate oxide thickness in um |
TEXT: H|temp Temperature in degree Celcius |
TEXT: H|vdd Supply voltage to specify mus |
TEXT: H|cgso Gate source overlap capacitance per unit channel width(m) |
TEXT: H ---------------------------------------------------------------------------
TEXT: H|cgdo Gate drain overlap capacitance per unit channel width(m) |
TEXT: H|cgbo Gate bulk overlap capacitance per unit channel length(m) |
TEXT: H|xpart Flag for channel charge partitioning |
TEXT: H|rsh Source drain diffusion sheet resistance in ohm per square |
TEXT: H|--------------------------------------------------------------------------+
TEXT: H|js Source drain junction saturation current per unit area |
TEXT: H|pb Source drain junction built in potential |
TEXT: H mj Source drain bottom junction capacitance grading coefficient
TEXT: H|pbsw Source drain side junction capacitance built in potential |
TEXT: H ---------------------------------------------------------------------------
TEXT: H|mjsw Source drain side junction capacitance grading coefficient |
TEXT: H|cj Source drain bottom junction capacitance per unit area |
TEXT: H|cjsw Source drain side junction capacitance per unit area |
TEXT: H|wdf Default width of source drain diffusion in um |
TEXT: H|dell Length reduction of source drain diffusion |
TEXT: H ---------------------------------------------------------------------------
TEXT: H
SUBJECT: BSIM2
TITLE: BSIM2: Berkeley Short Channel IGFET Model
TEXT: H
TEXT: H _B._5. _B_S_I_M_2: _B_e_r_k_e_l_e_y _S_h_o_r_t _C_h_a_n_n_e_l _I_G_F_E_T _M_o_d_e_l
TEXT: H
TEXT: H ------------------------------------------------------------
TEXT: H| BSIM2 - instance parameters (input-only) |
TEXT: H|-----------------------------------------------------------+
TEXT: H| ic Vector of DS,GS,BS initial voltages |
TEXT: H ------------------------------------------------------------
TEXT: H
TEXT: H
TEXT: H ------------------------------------------------------------
TEXT: H| BSIM2 - instance parameters (input-output) |
TEXT: H|-----------------------------------------------------------+
TEXT: H| l Length |
TEXT: H| w Width |
TEXT: H| ad Drain area |
TEXT: H| as Source area |
TEXT: H ------------------------------------------------------------
TEXT: H| pd Drain perimeter |
TEXT: H| ps Source perimeter |
TEXT: H| nrd Number of squares in drain |
TEXT: H| nrs Number of squares in source |
TEXT: H|-----------------------------------------------------------+
TEXT: H| off Device is initially off |
TEXT: H| vds Initial D-S voltage |
TEXT: H| vgs Initial G-S voltage |
TEXT: H| vbs Initial B-S voltage |
TEXT: H ------------------------------------------------------------
TEXT: H
TEXT: H
TEXT: H ------------------------------------------------------------
TEXT: H| BSIM2 - model parameters (input-only) |
TEXT: H|-----------------------------------------------------------+
TEXT: H| nmos Flag to indicate NMOS |
TEXT: H| pmos Flag to indicate PMOS |
TEXT: H ------------------------------------------------------------
TEXT: H
TEXT: H
TEXT: H ------------------------------------------------------------
TEXT: H| BSIM2 - model parameters (input-output) |
TEXT: H|-----------------------------------------------------------+
TEXT: H|vfb Flat band voltage |
TEXT: H|lvfb Length dependence of vfb |
TEXT: H|wvfb Width dependence of vfb |
TEXT: H|phi Strong inversion surface potential |
TEXT: H ------------------------------------------------------------
TEXT: H|lphi Length dependence of phi |
TEXT: H|wphi Width dependence of phi |
TEXT: H|k1 Bulk effect coefficient 1 |
TEXT: H|lk1 Length dependence of k1 |
TEXT: H|-----------------------------------------------------------+
TEXT: H|wk1 Width dependence of k1 |
TEXT: H|k2 Bulk effect coefficient 2 |
TEXT: H|lk2 Length dependence of k2 |
TEXT: H|wk2 Width dependence of k2 |
TEXT: H ------------------------------------------------------------
TEXT: H|eta0 VDS dependence of threshold voltage at VDD=0
TEXT: H|leta0 Length dependence of eta0 |
TEXT: H|weta0 Width dependence of eta0 |
TEXT: H|etab VBS dependence of eta |
TEXT: H|-----------------------------------------------------------+
TEXT: H|letab Length dependence of etab |
TEXT: H|wetab Width dependence of etab |
TEXT: H|dl Channel length reduction in um |
TEXT: H|dw Channel width reduction in um |
TEXT: H ------------------------------------------------------------
TEXT: H|mu0 Low-field mobility, at VDS=0 VGS=VTH |
TEXT: H|mu0b VBS dependence of low-field mobility |
TEXT: H|lmu0b Length dependence of mu0b |
TEXT: H|wmu0b Width dependence of mu0b |
TEXT: H|-----------------------------------------------------------+
TEXT: H|mus0 Mobility at VDS=VDD VGS=VTH |
TEXT: H|lmus0 Length dependence of mus0 |
TEXT: H|wmus0 Width dependence of mus |
TEXT: H|musb VBS dependence of mus |
TEXT: H ------------------------------------------------------------
TEXT: H|lmusb Length dependence of musb |
TEXT: H|wmusb Width dependence of musb |
TEXT: H|mu20 VDS dependence of mu in tanh term |
TEXT: H|lmu20 Length dependence of mu20 |
TEXT: H|-----------------------------------------------------------+
TEXT: H|wmu20 Width dependence of mu20 |
TEXT: H|mu2b VBS dependence of mu2 |
TEXT: H|lmu2b Length dependence of mu2b |
TEXT: H|wmu2b Width dependence of mu2b |
TEXT: H ------------------------------------------------------------
TEXT: H|mu2g VGS dependence of mu2 |
TEXT: H| _c_o_n_t_i_n_u_e_d |
TEXT: H ------------------------------------------------------------
TEXT: H
TEXT: H
TEXT: H ------------------------------------------------------------
TEXT: H| BSIM2 - model input-output parameters - _c_o_n_t_i_n_u_e_d
TEXT: H|-----------------------------------------------------------+
TEXT: H| lmu2g Length dependence of mu2g |
TEXT: H| wmu2g Width dependence of mu2g |
TEXT: H| mu30 VDS dependence of mu in linear term |
TEXT: H| lmu30 Length dependence of mu30 |
TEXT: H ------------------------------------------------------------
TEXT: H| wmu30 Width dependence of mu30 |
TEXT: H| mu3b VBS dependence of mu3 |
TEXT: H| lmu3b Length dependence of mu3b |
TEXT: H| wmu3b Width dependence of mu3b |
TEXT: H|-----------------------------------------------------------+
TEXT: H| mu3g VGS dependence of mu3 |
TEXT: H| lmu3g Length dependence of mu3g |
TEXT: H| wmu3g Width dependence of mu3g |
TEXT: H| mu40 VDS dependence of mu in linear term |
TEXT: H ------------------------------------------------------------
TEXT: H| lmu40 Length dependence of mu40 |
TEXT: H| wmu40 Width dependence of mu40 |
TEXT: H| mu4b VBS dependence of mu4 |
TEXT: H| lmu4b Length dependence of mu4b |
TEXT: H|-----------------------------------------------------------+
TEXT: H| wmu4b Width dependence of mu4b |
TEXT: H| mu4g VGS dependence of mu4 |
TEXT: H| lmu4g Length dependence of mu4g |
TEXT: H| wmu4g Width dependence of mu4g |
TEXT: H ------------------------------------------------------------
TEXT: H| ua0 Linear VGS dependence of mobility |
TEXT: H| lua0 Length dependence of ua0 |
TEXT: H| wua0 Width dependence of ua0 |
TEXT: H| uab VBS dependence of ua |
TEXT: H|-----------------------------------------------------------+
TEXT: H| luab Length dependence of uab |
TEXT: H| wuab Width dependence of uab |
TEXT: H| ub0 Quadratic VGS dependence of mobility |
TEXT: H| lub0 Length dependence of ub0 |
TEXT: H ------------------------------------------------------------
TEXT: H| wub0 Width dependence of ub0 |
TEXT: H| ubb VBS dependence of ub |
TEXT: H| lubb Length dependence of ubb |
TEXT: H| wubb Width dependence of ubb |
TEXT: H|-----------------------------------------------------------+
TEXT: H| u10 VDS depence of mobility |
TEXT: H| lu10 Length dependence of u10 |
TEXT: H wu10 Width dependence of u10
TEXT: H| u1b VBS depence of u1 |
TEXT: H ------------------------------------------------------------
TEXT: H| lu1b Length depence of u1b |
TEXT: H| wu1b Width depence of u1b |
TEXT: H| u1d VDS depence of u1 |
TEXT: H| lu1d Length depence of u1d |
TEXT: H|-----------------------------------------------------------+
TEXT: H| wu1d Width depence of u1d |
TEXT: H| n0 Subthreshold slope at VDS=0 VBS=0 |
TEXT: H| ln0 Length dependence of n0 |
TEXT: H| _c_o_n_t_i_n_u_e_d |
TEXT: H ------------------------------------------------------------
TEXT: H
TEXT: H
TEXT: H ------------------------------------------------------------------------
TEXT: H| BSIM2 - model input-output parameters - _c_o_n_t_i_n_u_e_d |
TEXT: H|-----------------------------------------------------------------------+
TEXT: H|wn0 Width dependence of n0 |
TEXT: H|nb VBS dependence of n |
TEXT: H|lnb Length dependence of nb |
TEXT: H|wnb Width dependence of nb |
TEXT: H ------------------------------------------------------------------------
TEXT: H|nd VDS dependence of n |
TEXT: H|lnd Length dependence of nd |
TEXT: H|wnd Width dependence of nd |
TEXT: H|vof0 Threshold voltage offset AT VDS=0 VBS=0 |
TEXT: H|-----------------------------------------------------------------------+
TEXT: H|lvof0 Length dependence of vof0 |
TEXT: H|wvof0 Width dependence of vof0 |
TEXT: H|vofb VBS dependence of vof |
TEXT: H|lvofb Length dependence of vofb |
TEXT: H ------------------------------------------------------------------------
TEXT: H|wvofb Width dependence of vofb |
TEXT: H|vofd VDS dependence of vof |
TEXT: H|lvofd Length dependence of vofd |
TEXT: H|wvofd Width dependence of vofd |
TEXT: H|-----------------------------------------------------------------------+
TEXT: H|ai0 Pre-factor of hot-electron effect. |
TEXT: H|lai0 Length dependence of ai0 |
TEXT: H|wai0 Width dependence of ai0 |
TEXT: H|aib VBS dependence of ai |
TEXT: H ------------------------------------------------------------------------
TEXT: H|laib Length dependence of aib |
TEXT: H|waib Width dependence of aib |
TEXT: H|bi0 Exponential factor of hot-electron effect. |
TEXT: H|lbi0 Length dependence of bi0 |
TEXT: H|-----------------------------------------------------------------------+
TEXT: H|wbi0 Width dependence of bi0 |
TEXT: H|bib VBS dependence of bi |
TEXT: H|lbib Length dependence of bib |
TEXT: H|wbib Width dependence of bib |
TEXT: H ------------------------------------------------------------------------
TEXT: H|vghigh Upper bound of the cubic spline function. |
TEXT: H|lvghigh Length dependence of vghigh |
TEXT: H|wvghigh Width dependence of vghigh |
TEXT: H|vglow Lower bound of the cubic spline function. |
TEXT: H|-----------------------------------------------------------------------+
TEXT: H|lvglow Length dependence of vglow |
TEXT: H|wvglow Width dependence of vglow |
TEXT: H|tox Gate oxide thickness in um |
TEXT: H|temp Temperature in degree Celcius |
TEXT: H ------------------------------------------------------------------------
TEXT: H|vdd Maximum Vds |
TEXT: H|vgg Maximum Vgs |
TEXT: H|vbb Maximum Vbs |
TEXT: H|cgso Gate source overlap capacitance per unit channel width(m)
TEXT: H|-----------------------------------------------------------------------+
TEXT: H|cgdo Gate drain overlap capacitance per unit channel width(m)|
TEXT: H|cgbo Gate bulk overlap capacitance per unit channel length(m)|
TEXT: H|xpart Flag for channel charge partitioning |
TEXT: H| _c_o_n_t_i_n_u_e_d |
TEXT: H ------------------------------------------------------------------------
TEXT: H
TEXT: H
TEXT: H ---------------------------------------------------------------------------
TEXT: H| BSIM2 - model input-output parameters - _c_o_n_t_i_n_u_e_d |
TEXT: H|--------------------------------------------------------------------------+
TEXT: H|rsh Source drain diffusion sheet resistance in ohm per square |
TEXT: H|js Source drain junction saturation current per unit area |
TEXT: H|pb Source drain junction built in potential |
TEXT: H mj Source drain bottom junction capacitance grading coefficient
TEXT: H| |
TEXT: H ---------------------------------------------------------------------------
TEXT: H|pbsw Source drain side junction capacitance built in potential |
TEXT: H|mjsw Source drain side junction capacitance grading coefficient |
TEXT: H|cj Source drain bottom junction capacitance per unit area |
TEXT: H|cjsw Source drain side junction capacitance per unit area |
TEXT: H|wdf Default width of source drain diffusion in um |
TEXT: H|dell Length reduction of source drain diffusion |
TEXT: H ---------------------------------------------------------------------------
TEXT: H
SUBJECT: Capacitor
TITLE: Capacitor: Fixed capacitor
TEXT: H
TEXT: H _B._6. _C_a_p_a_c_i_t_o_r: _F_i_x_e_d _c_a_p_a_c_i_t_o_r
TEXT: H
TEXT: H ------------------------------------------------------------
TEXT: H| Capacitor - instance parameters (input-output) |
TEXT: H|-----------------------------------------------------------+
TEXT: H| capacitance Device capacitance |
TEXT: H| ic Initial capacitor voltage |
TEXT: H| w Device width |
TEXT: H| l Device length |
TEXT: H ------------------------------------------------------------
TEXT: H
TEXT: H
TEXT: H ------------------------------------------------------------
TEXT: H| Capacitor - instance parameters (output-only) |
TEXT: H|-----------------------------------------------------------+
TEXT: H| i Device current |
TEXT: H| p Instantaneous device power |
TEXT: H ------------------------------------------------------------
TEXT: H
TEXT: H
TEXT: H ------------------------------------------------------------
TEXT: H| Capacitor - model parameters (input-only) |
TEXT: H|-----------------------------------------------------------+
TEXT: H| c Capacitor model |
TEXT: H ------------------------------------------------------------
TEXT: H
TEXT: H
TEXT: H ------------------------------------------------------------
TEXT: H| Capacitor - model parameters (input-output) |
TEXT: H|-----------------------------------------------------------+
TEXT: H| cj Bottom Capacitance per area |
TEXT: H| cjsw Sidewall capacitance per meter |
TEXT: H| defw Default width |
TEXT: H| narrow width correction factor |
TEXT: H ------------------------------------------------------------
TEXT: H
SUBJECT: CCCS
TITLE: CCCS: Current controlled current source
TEXT: H
TEXT: H _B._7. _C_C_C_S: _C_u_r_r_e_n_t _c_o_n_t_r_o_l_l_e_d _c_u_r_r_e_n_t _s_o_u_r_c_e
TEXT: H
TEXT: H ------------------------------------------------------------
TEXT: H| CCCS - instance parameters (input-output) |
TEXT: H|-----------------------------------------------------------+
TEXT: H| gain Gain of source |
TEXT: H| control Name of controlling source |
TEXT: H ------------------------------------------------------------
TEXT: H
TEXT: H
TEXT: H ------------------------------------------------------------
TEXT: H| CCCS - instance parameters (output-only) |
TEXT: H|-----------------------------------------------------------+
TEXT: H| neg_node Negative node of source |
TEXT: H| pos_node Positive node of source |
TEXT: H| i CCCS output current |
TEXT: H| v CCCS voltage at output |
TEXT: H| p CCCS power |
TEXT: H ------------------------------------------------------------
TEXT: H
SUBJECT: CCVS
TITLE: CCVS: Linear current controlled current source
TEXT: H
TEXT: H _B._8. _C_C_V_S: _L_i_n_e_a_r _c_u_r_r_e_n_t _c_o_n_t_r_o_l_l_e_d _c_u_r_r_e_n_t _s_o_u_r_c_e
TEXT: H
TEXT: H ------------------------------------------------------------
TEXT: H| CCVS - instance parameters (input-output) |
TEXT: H|-----------------------------------------------------------+
TEXT: H| gain Transresistance (gain) |
TEXT: H| control Controlling voltage source |
TEXT: H ------------------------------------------------------------
TEXT: H
TEXT: H
TEXT: H ------------------------------------------------------------
TEXT: H| CCVS - instance parameters (output-only) |
TEXT: H|-----------------------------------------------------------+
TEXT: H| pos_node Positive node of source |
TEXT: H| neg_node Negative node of source |
TEXT: H| i CCVS output current |
TEXT: H| v CCVS output voltage |
TEXT: H| p CCVS power |
TEXT: H ------------------------------------------------------------
TEXT: H
SUBJECT: CSwitch
TITLE: CSwitch: Current controlled ideal switch
TEXT: H
TEXT: H _B._9. _C_S_w_i_t_c_h: _C_u_r_r_e_n_t _c_o_n_t_r_o_l_l_e_d _i_d_e_a_l _s_w_i_t_c_h
TEXT: H
TEXT: H ------------------------------------------------------------
TEXT: H| CSwitch - instance parameters (input-only) |
TEXT: H|-----------------------------------------------------------+
TEXT: H| on Initially closed |
TEXT: H| off Initially open |
TEXT: H ------------------------------------------------------------
TEXT: H
TEXT: H
TEXT: H ------------------------------------------------------------
TEXT: H| CSwitch - instance parameters (input-output) |
TEXT: H|-----------------------------------------------------------+
TEXT: H| control Name of controlling source |
TEXT: H ------------------------------------------------------------
TEXT: H
TEXT: H
TEXT: H ------------------------------------------------------------
TEXT: H| CSwitch - instance parameters (output-only) |
TEXT: H|-----------------------------------------------------------+
TEXT: H| pos_node Positive node of switch |
TEXT: H| neg_node Negative node of switch |
TEXT: H| i Switch current |
TEXT: H| p Instantaneous power |
TEXT: H ------------------------------------------------------------
TEXT: H
TEXT: H
TEXT: H ------------------------------------------------------------
TEXT: H| CSwitch - model parameters (input-output) |
TEXT: H|-----------------------------------------------------------+
TEXT: H| csw Current controlled switch model |
TEXT: H| it Threshold current |
TEXT: H| ih Hysterisis current |
TEXT: H| ron Closed resistance |
TEXT: H| roff Open resistance |
TEXT: H ------------------------------------------------------------
TEXT: H
TEXT: H
TEXT: H ------------------------------------------------------------
TEXT: H| CSwitch - model parameters (output-only) |
TEXT: H|-----------------------------------------------------------+
TEXT: H| gon Closed conductance |
TEXT: H| goff Open conductance |
TEXT: H ------------------------------------------------------------
TEXT: H
SUBJECT: Diode
TITLE: Diode: Junction Diode model
TEXT: H
TEXT: H _B._1_0. _D_i_o_d_e: _J_u_n_c_t_i_o_n _D_i_o_d_e _m_o_d_e_l
TEXT: H
TEXT: H ------------------------------------------------------------
TEXT: H| Diode - instance parameters (input-output) |
TEXT: H|-----------------------------------------------------------+
TEXT: H| off Initially off |
TEXT: H| temp Instance temperature |
TEXT: H| ic Initial device voltage |
TEXT: H| area Area factor |
TEXT: H ------------------------------------------------------------
TEXT: H
TEXT: H
TEXT: H ------------------------------------------------------------
TEXT: H| Diode - instance parameters (output-only) |
TEXT: H|-----------------------------------------------------------+
TEXT: H| vd Diode voltage |
TEXT: H| id Diode current |
TEXT: H| c Diode current |
TEXT: H| gd Diode conductance |
TEXT: H ------------------------------------------------------------
TEXT: H| cd Diode capacitance |
TEXT: H| charge Diode capacitor charge |
TEXT: H| capcur Diode capacitor current |
TEXT: H| p Diode power |
TEXT: H ------------------------------------------------------------
TEXT: H
TEXT: H
TEXT: H ------------------------------------------------------------
TEXT: H| Diode - model parameters (input-only) |
TEXT: H|-----------------------------------------------------------+
TEXT: H| d Diode model |
TEXT: H ------------------------------------------------------------
TEXT: H
TEXT: H
TEXT: H ------------------------------------------------------------
TEXT: H| Diode - model parameters (input-output) |
TEXT: H|-----------------------------------------------------------+
TEXT: H| is Saturation current |
TEXT: H| tnom Parameter measurement temperature |
TEXT: H| rs Ohmic resistance |
TEXT: H| n Emission Coefficient |
TEXT: H ------------------------------------------------------------
TEXT: H| tt Transit Time |
TEXT: H| cjo Junction capacitance |
TEXT: H| cj0 (null) |
TEXT: H| vj Junction potential |
TEXT: H|-----------------------------------------------------------+
TEXT: H| m Grading coefficient |
TEXT: H| eg Activation energy |
TEXT: H| xti Saturation current temperature exp. |
TEXT: H| kf flicker noise coefficient |
TEXT: H ------------------------------------------------------------
TEXT: H| af flicker noise exponent |
TEXT: H| fc Forward bias junction fit parameter |
TEXT: H| bv Reverse breakdown voltage |
TEXT: H| ibv Current at reverse breakdown voltage |
TEXT: H ------------------------------------------------------------
TEXT: H
TEXT: H
TEXT: H ------------------------------------------------------------
TEXT: H| Diode - model parameters (output-only) |
TEXT: H|-----------------------------------------------------------+
TEXT: H| cond Ohmic conductance |
TEXT: H ------------------------------------------------------------
TEXT: H
SUBJECT: Inductor
TITLE: Inductor: Inductors
TEXT: H
TEXT: H _B._1_1. _I_n_d_u_c_t_o_r: _I_n_d_u_c_t_o_r_s
TEXT: H
TEXT: H ------------------------------------------------------------
TEXT: H| Inductor - instance parameters (input-output) |
TEXT: H|-----------------------------------------------------------+
TEXT: H| inductance Inductance of inductor |
TEXT: H| ic Initial current through inductor |
TEXT: H ------------------------------------------------------------
TEXT: H
TEXT: H
TEXT: H -------------------------------------------------------------
TEXT: H| Inductor - instance parameters (output-only) |
TEXT: H|------------------------------------------------------------+
TEXT: H|flux Flux through inductor |
TEXT: H|v Terminal voltage of inductor |
TEXT: H|volt |
TEXT: H|i Current through the inductor |
TEXT: H|current |
TEXT: H p instantaneous power dissipated by the inductor
TEXT: H| |
TEXT: H -------------------------------------------------------------
TEXT: H
SUBJECT: mutual
TITLE: mutual: Mutual inductors
TEXT: H
TEXT: H _B._1_2. _m_u_t_u_a_l: _M_u_t_u_a_l _i_n_d_u_c_t_o_r_s
TEXT: H
TEXT: H ------------------------------------------------------------
TEXT: H| mutual - instance parameters (input-output) |
TEXT: H|-----------------------------------------------------------+
TEXT: H| k Mutual inductance |
TEXT: H| coefficient (null) |
TEXT: H| inductor1 First coupled inductor |
TEXT: H| inductor2 Second coupled inductor |
TEXT: H ------------------------------------------------------------
TEXT: H
SUBJECT: Isource
TITLE: Isource: Independent current source
TEXT: H
TEXT: H _B._1_3. _I_s_o_u_r_c_e: _I_n_d_e_p_e_n_d_e_n_t _c_u_r_r_e_n_t _s_o_u_r_c_e
TEXT: H
TEXT: H ------------------------------------------------------------
TEXT: H| Isource - instance parameters (input-only) |
TEXT: H|-----------------------------------------------------------+
TEXT: H| pulse Pulse description |
TEXT: H| sine Sinusoidal source description |
TEXT: H| sin Sinusoidal source description |
TEXT: H| exp Exponential source description |
TEXT: H ------------------------------------------------------------
TEXT: H| pwl Piecewise linear description |
TEXT: H| sffm single freq. FM description |
TEXT: H| ac AC magnitude,phase vector |
TEXT: H| c Current through current source |
TEXT: H| distof1 f1 input for distortion |
TEXT: H| distof2 f2 input for distortion |
TEXT: H ------------------------------------------------------------
TEXT: H
TEXT: H
TEXT: H ------------------------------------------------------------
TEXT: H| Isource - instance parameters (input-output) |
TEXT: H|-----------------------------------------------------------+
TEXT: H| dc DC value of source |
TEXT: H| acmag AC magnitude |
TEXT: H| acphase AC phase |
TEXT: H ------------------------------------------------------------
TEXT: H
TEXT: H
TEXT: H ------------------------------------------------------------
TEXT: H| Isource - instance parameters (output-only) |
TEXT: H|-----------------------------------------------------------+
TEXT: H| neg_node Negative node of source |
TEXT: H| pos_node Positive node of source |
TEXT: H acreal AC real part
TEXT: H| acimag AC imaginary part |
TEXT: H ------------------------------------------------------------
TEXT: H| function Function of the source |
TEXT: H| order Order of the source function |
TEXT: H| coeffs Coefficients of the source |
TEXT: H| v Voltage across the supply |
TEXT: H| p Power supplied by the source |
TEXT: H ------------------------------------------------------------
TEXT: H
SUBJECT: JFET
TITLE: JFET: Junction Field effect transistor
TEXT: H
TEXT: H _B._1_4. _J_F_E_T: _J_u_n_c_t_i_o_n _F_i_e_l_d _e_f_f_e_c_t _t_r_a_n_s_i_s_t_o_r
TEXT: H
TEXT: H ------------------------------------------------------------
TEXT: H| JFET - instance parameters (input-output) |
TEXT: H|-----------------------------------------------------------+
TEXT: H| off Device initially off |
TEXT: H| ic Initial VDS,VGS vector |
TEXT: H| area Area factor |
TEXT: H| ic-vds Initial D-S voltage |
TEXT: H| ic-vgs Initial G-S volrage |
TEXT: H| temp Instance temperature |
TEXT: H ------------------------------------------------------------
TEXT: H
TEXT: H
TEXT: H ---------------------------------------------------------------
TEXT: H| JFET - instance parameters (output-only) |
TEXT: H|--------------------------------------------------------------+
TEXT: H|drain-node Number of drain node |
TEXT: H|gate-node Number of gate node |
TEXT: H|source-node Number of source node |
TEXT: H|drain-prime-node Internal drain node |
TEXT: H ---------------------------------------------------------------
TEXT: H|source-prime-nodeInternal source node |
TEXT: H|vgs Voltage G-S |
TEXT: H|vgd Voltage G-D |
TEXT: H|ig Current at gate node |
TEXT: H|--------------------------------------------------------------+
TEXT: H|id Current at drain node |
TEXT: H|is Source current |
TEXT: H|igd Current G-D |
TEXT: H|gm Transconductance |
TEXT: H ---------------------------------------------------------------
TEXT: H|gds Conductance D-S |
TEXT: H|ggs Conductance G-S |
TEXT: H|ggd Conductance G-D |
TEXT: H|qgs Charge storage G-S junction |
TEXT: H|--------------------------------------------------------------+
TEXT: H|qgd Charge storage G-D junction |
TEXT: H cqgs Capacitance due to charge storage G-S junction
TEXT: H| |
TEXT: H cqgd Capacitance due to charge storage G-D junction
TEXT: H|p Power dissipated by the JFET |
TEXT: H ---------------------------------------------------------------
TEXT: H
TEXT: H
TEXT: H ------------------------------------------------------------
TEXT: H| JFET - model parameters (input-output) |
TEXT: H|-----------------------------------------------------------+
TEXT: H| njf N type JFET model |
TEXT: H| pjf P type JFET model |
TEXT: H| vt0 Threshold voltage |
TEXT: H| vto (null) |
TEXT: H ------------------------------------------------------------
TEXT: H| beta Transconductance parameter |
TEXT: H| lambda Channel length modulation param. |
TEXT: H| rd Drain ohmic resistance |
TEXT: H| rs Source ohmic resistance |
TEXT: H| cgs G-S junction capactance |
TEXT: H| _c_o_n_t_i_n_u_e_d |
TEXT: H ------------------------------------------------------------
TEXT: H
TEXT: H
TEXT: H ------------------------------------------------------------
TEXT: H| JFET - model input-output parameters - _c_o_n_t_i_n_u_e_d
TEXT: H|-----------------------------------------------------------+
TEXT: H| cgd G-D junction cap |
TEXT: H| pb Gate junction potential |
TEXT: H| is Gate junction saturation current |
TEXT: H| fc Forward bias junction fit parm. |
TEXT: H ------------------------------------------------------------
TEXT: H| b Doping tail parameter |
TEXT: H| tnom parameter measurement temperature |
TEXT: H| kf Flicker Noise Coefficient |
TEXT: H| af Flicker Noise Exponent |
TEXT: H ------------------------------------------------------------
TEXT: H
TEXT: H
TEXT: H ------------------------------------------------------------
TEXT: H| JFET - model parameters (output-only) |
TEXT: H|-----------------------------------------------------------+
TEXT: H| type N-type or P-type JFET model |
TEXT: H| gd Drain conductance |
TEXT: H| gs Source conductance |
TEXT: H ------------------------------------------------------------
TEXT: H
SUBJECT: LTRA
TITLE: LTRA: Lossy transmission line
TEXT: H
TEXT: H _B._1_5. _L_T_R_A: _L_o_s_s_y _t_r_a_n_s_m_i_s_s_i_o_n _l_i_n_e
TEXT: H
TEXT: H ------------------------------------------------------------
TEXT: H| LTRA - instance parameters (input-only) |
TEXT: H|-----------------------------------------------------------+
TEXT: H| ic Initial condition vector:v1,i1,v2,i2 |
TEXT: H ------------------------------------------------------------
TEXT: H
TEXT: H ------------------------------------------------------------
TEXT: H| LTRA - instance parameters (input-output) |
TEXT: H|-----------------------------------------------------------+
TEXT: H| v1 Initial voltage at end 1 |
TEXT: H| v2 Initial voltage at end 2 |
TEXT: H| i1 Initial current at end 1 |
TEXT: H| i2 Initial current at end 2 |
TEXT: H ------------------------------------------------------------
TEXT: H
TEXT: H
TEXT: H ------------------------------------------------------------
TEXT: H| LTRA - instance parameters (output-only) |
TEXT: H|-----------------------------------------------------------+
TEXT: H| pos_node1 Positive node of end 1 of t-line |
TEXT: H| neg_node1 Negative node of end 1 of t.line |
TEXT: H| pos_node2 Positive node of end 2 of t-line |
TEXT: H| neg_node2 Negative node of end 2 of t-line |
TEXT: H ------------------------------------------------------------
TEXT: H
TEXT: H
TEXT: H ------------------------------------------------------------
TEXT: H| LTRA - model parameters (input-output) |
TEXT: H|-----------------------------------------------------------+
TEXT: H|ltra LTRA model |
TEXT: H|r Resistance per metre |
TEXT: H|l Inductance per metre |
TEXT: H|g (null) |
TEXT: H ------------------------------------------------------------
TEXT: H|c Capacitance per metre |
TEXT: H|len length of line |
TEXT: H|nocontrol No timestep control |
TEXT: H|steplimit always limit timestep to 0.8*(delay of line)
TEXT: H| _c_o_n_t_i_n_u_e_d |
TEXT: H ------------------------------------------------------------
TEXT: H
TEXT: H -----------------------------------------------------------------------------------
TEXT: H| LTRA - model input-output parameters - _c_o_n_t_i_n_u_e_d |
TEXT: H|----------------------------------------------------------------------------------+
TEXT: H|nosteplimit don't always limit timestep to 0.8*(delay of line) |
TEXT: H|lininterp use linear interpolation |
TEXT: H|quadinterp use quadratic interpolation |
TEXT: H|mixedinterp use linear interpolation if quadratic results look unacceptable |
TEXT: H -----------------------------------------------------------------------------------
TEXT: H|truncnr use N-R iterations for step calculation in LTRAtrunc |
TEXT: H|truncdontcut don't limit timestep to keep impulse response calculation errors low
TEXT: H|compactrel special reltol for straight line checking |
TEXT: H|compactabs special abstol for straight line checking |
TEXT: H -----------------------------------------------------------------------------------
TEXT: H
TEXT: H
TEXT: H ------------------------------------------------------------
TEXT: H| LTRA - model parameters (output-only) |
TEXT: H|-----------------------------------------------------------+
TEXT: H| rel Rel. rate of change of deriv. for bkpt |
TEXT: H| abs Abs. rate of change of deriv. for bkpt |
TEXT: H ------------------------------------------------------------
TEXT: H
SUBJECT: MES
TITLE: MES: GaAs MESFET model
TEXT: H
TEXT: H _B._1_6. _M_E_S: _G_a_A_s _M_E_S_F_E_T _m_o_d_e_l
TEXT: H
TEXT: H ------------------------------------------------------------
TEXT: H| MES - instance parameters (input-output) |
TEXT: H|-----------------------------------------------------------+
TEXT: H| area Area factor |
TEXT: H| icvds Initial D-S voltage |
TEXT: H| icvgs Initial G-S voltage |
TEXT: H ------------------------------------------------------------
TEXT: H
TEXT: H
TEXT: H ------------------------------------------------------------
TEXT: H| MES - instance parameters (output-only) |
TEXT: H|-----------------------------------------------------------+
TEXT: H|off Device initially off |
TEXT: H|dnode Number of drain node |
TEXT: H|gnode Number of gate node |
TEXT: H|snode Number of source node |
TEXT: H ------------------------------------------------------------
TEXT: H|dprimenode Number of internal drain node |
TEXT: H|sprimenode Number of internal source node |
TEXT: H|vgs Gate-Source voltage |
TEXT: H|vgd Gate-Drain voltage |
TEXT: H|-----------------------------------------------------------+
TEXT: H|cg Gate capacitance |
TEXT: H|cd Drain capacitance |
TEXT: H|cgd Gate-Drain capacitance |
TEXT: H|gm Transconductance |
TEXT: H ------------------------------------------------------------
TEXT: H|gds Drain-Source conductance |
TEXT: H|ggs Gate-Source conductance |
TEXT: H|ggd Gate-Drain conductance |
TEXT: H|cqgs Capacitance due to gate-source charge storage
TEXT: H|-----------------------------------------------------------+
TEXT: H|cqgd Capacitance due to gate-drain charge storage|
TEXT: H|qgs Gate-Source charge storage |
TEXT: H|qgd Gate-Drain charge storage |
TEXT: H|is Source current |
TEXT: H| _c_o_n_t_i_n_u_e_d |
TEXT: H ------------------------------------------------------------
TEXT: H
TEXT: H
TEXT: H ------------------------------------------------------------
TEXT: H| MES - instance output-only parameters - _c_o_n_t_i_n_u_e_d
TEXT: H|-----------------------------------------------------------+
TEXT: H| p Power dissipated by the mesfet |
TEXT: H ------------------------------------------------------------
TEXT: H
TEXT: H ------------------------------------------------------------
TEXT: H| MES - model parameters (input-only) |
TEXT: H|-----------------------------------------------------------+
TEXT: H| nmf N type MESfet model |
TEXT: H| pmf P type MESfet model |
TEXT: H ------------------------------------------------------------
TEXT: H
TEXT: H
TEXT: H ------------------------------------------------------------
TEXT: H| MES - model parameters (input-output) |
TEXT: H|-----------------------------------------------------------+
TEXT: H| vt0 Pinch-off voltage |
TEXT: H| vto (null) |
TEXT: H| alpha Saturation voltage parameter |
TEXT: H| beta Transconductance parameter |
TEXT: H ------------------------------------------------------------
TEXT: H| lambda Channel length modulation parm. |
TEXT: H| b Doping tail extending parameter |
TEXT: H| rd Drain ohmic resistance |
TEXT: H| rs Source ohmic resistance |
TEXT: H|-----------------------------------------------------------+
TEXT: H| cgs G-S junction capacitance |
TEXT: H| cgd G-D junction capacitance |
TEXT: H| pb Gate junction potential |
TEXT: H| is Junction saturation current |
TEXT: H ------------------------------------------------------------
TEXT: H| fc Forward bias junction fit parm. |
TEXT: H| kf Flicker noise coefficient |
TEXT: H| af Flicker noise exponent |
TEXT: H ------------------------------------------------------------
TEXT: H
TEXT: H
TEXT: H ------------------------------------------------------------
TEXT: H| MES - model parameters (output-only) |
TEXT: H|-----------------------------------------------------------+
TEXT: H| type N-type or P-type MESfet model |
TEXT: H| gd Drain conductance |
TEXT: H| gs Source conductance |
TEXT: H| depl_cap Depletion capacitance |
TEXT: H| vcrit Critical voltage |
TEXT: H ------------------------------------------------------------
TEXT: H
SUBJECT: Mos1
TITLE: Mos1: Level 1 MOSfet model with Meyer capacitance model
TEXT: H
TEXT: H _B._1_7. _M_o_s_1: _L_e_v_e_l _1 _M_O_S_f_e_t _m_o_d_e_l _w_i_t_h _M_e_y_e_r _c_a_p_a_c_i_t_a_n_c_e
TEXT: H _m_o_d_e_l
TEXT: H
TEXT: H ------------------------------------------------------------
TEXT: H| Mos1 - instance parameters (input-only) |
TEXT: H|-----------------------------------------------------------+
TEXT: H| off Device initially off |
TEXT: H| ic Vector of D-S, G-S, B-S voltages |
TEXT: H ------------------------------------------------------------
TEXT: H
TEXT: H
TEXT: H ------------------------------------------------------------
TEXT: H| Mos1 - instance parameters (input-output) |
TEXT: H|-----------------------------------------------------------+
TEXT: H| l Length |
TEXT: H| w Width |
TEXT: H| ad Drain area |
TEXT: H| as Source area |
TEXT: H ------------------------------------------------------------
TEXT: H| pd Drain perimeter |
TEXT: H| ps Source perimeter |
TEXT: H| nrd Drain squares |
TEXT: H| nrs Source squares |
TEXT: H|-----------------------------------------------------------+
TEXT: H| icvds Initial D-S voltage |
TEXT: H| icvgs Initial G-S voltage |
TEXT: H| icvbs Initial B-S voltage |
TEXT: H| temp Instance temperature |
TEXT: H ------------------------------------------------------------
TEXT: H
TEXT: H
TEXT: H ------------------------------------------------------------
TEXT: H| Mos1 - instance parameters (output-only) |
TEXT: H|-----------------------------------------------------------+
TEXT: H| id Drain current |
TEXT: H| is Source current |
TEXT: H| ig Gate current |
TEXT: H| ib Bulk current |
TEXT: H ------------------------------------------------------------
TEXT: H| ibd B-D junction current |
TEXT: H| ibs B-S junction current |
TEXT: H| vgs Gate-Source voltage |
TEXT: H| vds Drain-Source voltage |
TEXT: H|-----------------------------------------------------------+
TEXT: H| vbs Bulk-Source voltage |
TEXT: H| vbd Bulk-Drain voltage |
TEXT: H| dnode Number of the drain node |
TEXT: H| gnode Number of the gate node |
TEXT: H ------------------------------------------------------------
TEXT: H| snode Number of the source node |
TEXT: H| bnode Number of the node |
TEXT: H| dnodeprime Number of int. drain node |
TEXT: H| snodeprime Number of int. source node |
TEXT: H|-----------------------------------------------------------+
TEXT: H| von |
TEXT: H| vdsat Saturation drain voltage |
TEXT: H| sourcevcrit Critical source voltage |
TEXT: H| drainvcrit Critical drain voltage |
TEXT: H| rs Source resistance |
TEXT: H| _c_o_n_t_i_n_u_e_d |
TEXT: H ------------------------------------------------------------
TEXT: H
TEXT: H
TEXT: H --------------------------------------------------------------
TEXT: H| Mos1 - instance output-only parameters - _c_o_n_t_i_n_u_e_d
TEXT: H|-------------------------------------------------------------+
TEXT: H|sourceconductanceConductance of source |
TEXT: H|rd Drain conductance |
TEXT: H|drainconductance Conductance of drain |
TEXT: H|gm Transconductance |
TEXT: H --------------------------------------------------------------
TEXT: H|gds Drain-Source conductance |
TEXT: H|gmb Bulk-Source transconductance |
TEXT: H|gmbs |
TEXT: H|gbd Bulk-Drain conductance |
TEXT: H|-------------------------------------------------------------+
TEXT: H|gbs Bulk-Source conductance |
TEXT: H|cbd Bulk-Drain capacitance |
TEXT: H|cbs Bulk-Source capacitance |
TEXT: H|cgs Gate-Source capacitance |
TEXT: H --------------------------------------------------------------
TEXT: H|cgd Gate-Drain capacitance |
TEXT: H|cgb Gate-Bulk capacitance |
TEXT: H|cqgs Capacitance due to gate-source charge storage
TEXT: H|cqgd Capacitance due to gate-drain charge storage|
TEXT: H|-------------------------------------------------------------+
TEXT: H|cqgb Capacitance due to gate-bulk charge storage |
TEXT: H|cqbd Capacitance due to bulk-drain charge storage|
TEXT: H cqbs Capacitance due to bulk-source charge storage
TEXT: H|cbd0 Zero-Bias B-D junction capacitance |
TEXT: H --------------------------------------------------------------
TEXT: H|cbdsw0 |
TEXT: H|cbs0 Zero-Bias B-S junction capacitance |
TEXT: H|cbssw0 |
TEXT: H|qgs Gate-Source charge storage |
TEXT: H|-------------------------------------------------------------+
TEXT: H|qgd Gate-Drain charge storage |
TEXT: H|qgb Gate-Bulk charge storage |
TEXT: H|qbd Bulk-Drain charge storage |
TEXT: H|qbs Bulk-Source charge storage |
TEXT: H|p Instaneous power |
TEXT: H --------------------------------------------------------------
TEXT: H
TEXT: H
TEXT: H ------------------------------------------------------------
TEXT: H| Mos1 - model parameters (input-only) |
TEXT: H|-----------------------------------------------------------+
TEXT: H| nmos N type MOSfet model |
TEXT: H| pmos P type MOSfet model |
TEXT: H ------------------------------------------------------------
TEXT: H
TEXT: H
TEXT: H ------------------------------------------------------------
TEXT: H| Mos1 - model parameters (input-output) |
TEXT: H|-----------------------------------------------------------+
TEXT: H| vto Threshold voltage |
TEXT: H| vt0 (null) |
TEXT: H| kp Transconductance parameter |
TEXT: H| gamma Bulk threshold parameter |
TEXT: H ------------------------------------------------------------
TEXT: H| phi Surface potential |
TEXT: H| lambda Channel length modulation |
TEXT: H| rd Drain ohmic resistance |
TEXT: H| _c_o_n_t_i_n_u_e_d |
TEXT: H ------------------------------------------------------------
TEXT: H
TEXT: H
TEXT: H ------------------------------------------------------------
TEXT: H| Mos1 - model input-output parameters - _c_o_n_t_i_n_u_e_d
TEXT: H|-----------------------------------------------------------+
TEXT: H| rs Source ohmic resistance |
TEXT: H| cbd B-D junction capacitance |
TEXT: H| cbs B-S junction capacitance |
TEXT: H| is Bulk junction sat. current |
TEXT: H ------------------------------------------------------------
TEXT: H| pb Bulk junction potential |
TEXT: H| cgso Gate-source overlap cap. |
TEXT: H| cgdo Gate-drain overlap cap. |
TEXT: H| cgbo Gate-bulk overlap cap. |
TEXT: H|-----------------------------------------------------------+
TEXT: H| rsh Sheet resistance |
TEXT: H| cj Bottom junction cap per area |
TEXT: H| mj Bottom grading coefficient |
TEXT: H| cjsw Side junction cap per area |
TEXT: H ------------------------------------------------------------
TEXT: H| mjsw Side grading coefficient |
TEXT: H| js Bulk jct. sat. current density |
TEXT: H| tox Oxide thickness |
TEXT: H| ld Lateral diffusion |
TEXT: H|-----------------------------------------------------------+
TEXT: H| u0 Surface mobility |
TEXT: H| uo (null) |
TEXT: H| fc Forward bias jct. fit parm. |
TEXT: H| nsub Substrate doping |
TEXT: H ------------------------------------------------------------
TEXT: H| tpg Gate type |
TEXT: H| nss Surface state density |
TEXT: H| tnom Parameter measurement temperature |
TEXT: H| kf Flicker noise coefficient |
TEXT: H| af Flicker noise exponent |
TEXT: H ------------------------------------------------------------
TEXT: H
TEXT: H
TEXT: H ------------------------------------------------------------
TEXT: H| Mos1 - model parameters (output-only) |
TEXT: H|-----------------------------------------------------------+
TEXT: H| type N-channel or P-channel MOS |
TEXT: H ------------------------------------------------------------
TEXT: H
SUBJECT: Mos2
TITLE: Mos2: Level 2 MOSfet model with Meyer capacitance model
TEXT: H
TEXT: H _B._1_8. _M_o_s_2: _L_e_v_e_l _2 _M_O_S_f_e_t _m_o_d_e_l _w_i_t_h _M_e_y_e_r _c_a_p_a_c_i_t_a_n_c_e
TEXT: H _m_o_d_e_l
TEXT: H
TEXT: H ------------------------------------------------------------
TEXT: H| Mos2 - instance parameters (input-only) |
TEXT: H|-----------------------------------------------------------+
TEXT: H| off Device initially off |
TEXT: H| ic Vector of D-S, G-S, B-S voltages |
TEXT: H ------------------------------------------------------------
TEXT: H
TEXT: H
TEXT: H ------------------------------------------------------------
TEXT: H| Mos2 - instance parameters (input-output) |
TEXT: H|-----------------------------------------------------------+
TEXT: H| l Length |
TEXT: H| w Width |
TEXT: H| ad Drain area |
TEXT: H| as Source area |
TEXT: H ------------------------------------------------------------
TEXT: H| pd Drain perimeter |
TEXT: H| ps Source perimeter |
TEXT: H| nrd Drain squares |
TEXT: H| nrs Source squares |
TEXT: H|-----------------------------------------------------------+
TEXT: H| icvds Initial D-S voltage |
TEXT: H| icvgs Initial G-S voltage |
TEXT: H| icvbs Initial B-S voltage |
TEXT: H| temp Instance operating temperature |
TEXT: H ------------------------------------------------------------
TEXT: H
TEXT: H
TEXT: H ------------------------------------------------------------
TEXT: H| Mos2 - instance parameters (output-only) |
TEXT: H|-----------------------------------------------------------+
TEXT: H| id Drain current |
TEXT: H| cd |
TEXT: H| ibd B-D junction current |
TEXT: H| ibs B-S junction current |
TEXT: H ------------------------------------------------------------
TEXT: H| is Source current |
TEXT: H| ig Gate current |
TEXT: H| ib Bulk current |
TEXT: H| vgs Gate-Source voltage |
TEXT: H|-----------------------------------------------------------+
TEXT: H| vds Drain-Source voltage |
TEXT: H| vbs Bulk-Source voltage |
TEXT: H| vbd Bulk-Drain voltage |
TEXT: H| dnode Number of drain node |
TEXT: H ------------------------------------------------------------
TEXT: H| gnode Number of gate node |
TEXT: H| snode Number of source node |
TEXT: H| bnode Number of bulk node |
TEXT: H| dnodeprime Number of internal drain node |
TEXT: H|-----------------------------------------------------------+
TEXT: H| snodeprime Number of internal source node |
TEXT: H| von |
TEXT: H| vdsat Saturation drain voltage |
TEXT: H| sourcevcrit Critical source voltage |
TEXT: H| drainvcrit Critical drain voltage |
TEXT: H| _c_o_n_t_i_n_u_e_d |
TEXT: H ------------------------------------------------------------
TEXT: H
TEXT: H
TEXT: H --------------------------------------------------------------
TEXT: H| Mos2 - instance output-only parameters - _c_o_n_t_i_n_u_e_d
TEXT: H|-------------------------------------------------------------+
TEXT: H|rs Source resistance |
TEXT: H|sourceconductanceSource conductance |
TEXT: H|rd Drain resistance |
TEXT: H|drainconductance Drain conductance |
TEXT: H --------------------------------------------------------------
TEXT: H|gm Transconductance |
TEXT: H|gds Drain-Source conductance |
TEXT: H|gmb Bulk-Source transconductance |
TEXT: H|gmbs |
TEXT: H|-------------------------------------------------------------+
TEXT: H|gbd Bulk-Drain conductance |
TEXT: H|gbs Bulk-Source conductance |
TEXT: H|cbd Bulk-Drain capacitance |
TEXT: H|cbs Bulk-Source capacitance |
TEXT: H --------------------------------------------------------------
TEXT: H|cgs Gate-Source capacitance |
TEXT: H|cgd Gate-Drain capacitance |
TEXT: H|cgb Gate-Bulk capacitance |
TEXT: H|cbd0 Zero-Bias B-D junction capacitance |
TEXT: H|-------------------------------------------------------------+
TEXT: H|cbdsw0 |
TEXT: H|cbs0 Zero-Bias B-S junction capacitance |
TEXT: H|cbssw0 |
TEXT: H cqgs Capacitance due to gate-source charge storage
TEXT: H| |
TEXT: H --------------------------------------------------------------
TEXT: H|cqgd Capacitance due to gate-drain charge storage|
TEXT: H|cqgb Capacitance due to gate-bulk charge storage |
TEXT: H|cqbd Capacitance due to bulk-drain charge storage|
TEXT: H|cqbs Capacitance due to bulk-source charge storage
TEXT: H|-------------------------------------------------------------+
TEXT: H|qgs Gate-Source charge storage |
TEXT: H|qgd Gate-Drain charge storage |
TEXT: H|qgb Gate-Bulk charge storage |
TEXT: H|qbd Bulk-Drain charge storage |
TEXT: H|qbs Bulk-Source charge storage |
TEXT: H|p Instantaneous power |
TEXT: H --------------------------------------------------------------
TEXT: H
TEXT: H
TEXT: H ------------------------------------------------------------
TEXT: H| Mos2 - model parameters (input-only) |
TEXT: H|-----------------------------------------------------------+
TEXT: H| nmos N type MOSfet model |
TEXT: H| pmos P type MOSfet model |
TEXT: H ------------------------------------------------------------
TEXT: H
TEXT: H
TEXT: H ------------------------------------------------------------
TEXT: H| Mos2 - model parameters (input-output) |
TEXT: H|-----------------------------------------------------------+
TEXT: H| vto Threshold voltage |
TEXT: H| vt0 (null) |
TEXT: H| kp Transconductance parameter |
TEXT: H| gamma Bulk threshold parameter |
TEXT: H ------------------------------------------------------------
TEXT: H| phi Surface potential |
TEXT: H| lambda Channel length modulation |
TEXT: H| rd Drain ohmic resistance |
TEXT: H| rs Source ohmic resistance |
TEXT: H|-----------------------------------------------------------+
TEXT: H| cbd B-D junction capacitance |
TEXT: H| cbs B-S junction capacitance |
TEXT: H| is Bulk junction sat. current |
TEXT: H| pb Bulk junction potential |
TEXT: H ------------------------------------------------------------
TEXT: H| cgso Gate-source overlap cap. |
TEXT: H| cgdo Gate-drain overlap cap. |
TEXT: H| cgbo Gate-bulk overlap cap. |
TEXT: H| rsh Sheet resistance |
TEXT: H|-----------------------------------------------------------+
TEXT: H| cj Bottom junction cap per area |
TEXT: H| mj Bottom grading coefficient |
TEXT: H| cjsw Side junction cap per area |
TEXT: H| mjsw Side grading coefficient |
TEXT: H ------------------------------------------------------------
TEXT: H| js Bulk jct. sat. current density |
TEXT: H| tox Oxide thickness |
TEXT: H| ld Lateral diffusion |
TEXT: H| u0 Surface mobility |
TEXT: H|-----------------------------------------------------------+
TEXT: H| uo (null) |
TEXT: H| fc Forward bias jct. fit parm. |
TEXT: H| nsub Substrate doping |
TEXT: H| tpg Gate type |
TEXT: H ------------------------------------------------------------
TEXT: H| nss Surface state density |
TEXT: H| delta Width effect on threshold |
TEXT: H| uexp Crit. field exp for mob. deg. |
TEXT: H| ucrit Crit. field for mob. degradation |
TEXT: H|-----------------------------------------------------------+
TEXT: H| vmax Maximum carrier drift velocity |
TEXT: H| xj Junction depth |
TEXT: H| neff Total channel charge coeff. |
TEXT: H| nfs Fast surface state density |
TEXT: H ------------------------------------------------------------
TEXT: H| tnom Parameter measurement temperature |
TEXT: H| kf Flicker noise coefficient |
TEXT: H| af Flicker noise exponent |
TEXT: H ------------------------------------------------------------
TEXT: H
TEXT: H
TEXT: H ------------------------------------------------------------
TEXT: H| Mos2 - model parameters (output-only) |
TEXT: H|-----------------------------------------------------------+
TEXT: H| type N-channel or P-channel MOS |
TEXT: H ------------------------------------------------------------
SUBJECT: Mos3
TITLE: Mos3: Level 3 MOSfet model with Meyer capacitance model
TEXT: H
TEXT: H _B._1_9. _M_o_s_3: _L_e_v_e_l _3 _M_O_S_f_e_t _m_o_d_e_l _w_i_t_h _M_e_y_e_r _c_a_p_a_c_i_t_a_n_c_e
TEXT: H _m_o_d_e_l
TEXT: H
TEXT: H ------------------------------------------------------------
TEXT: H| Mos3 - instance parameters (input-only) |
TEXT: H|-----------------------------------------------------------+
TEXT: H| off Device initially off |
TEXT: H ------------------------------------------------------------
TEXT: H
TEXT: H
TEXT: H ------------------------------------------------------------
TEXT: H| Mos3 - instance parameters (input-output) |
TEXT: H|-----------------------------------------------------------+
TEXT: H| l Length |
TEXT: H| w Width |
TEXT: H| ad Drain area |
TEXT: H| as Source area |
TEXT: H ------------------------------------------------------------
TEXT: H| pd Drain perimeter |
TEXT: H| ps Source perimeter |
TEXT: H| nrd Drain squares |
TEXT: H| nrs Source squares |
TEXT: H|-----------------------------------------------------------+
TEXT: H| icvds Initial D-S voltage |
TEXT: H| icvgs Initial G-S voltage |
TEXT: H| icvbs Initial B-S voltage |
TEXT: H| ic Vector of D-S, G-S, B-S voltages |
TEXT: H| temp Instance operating temperature |
TEXT: H ------------------------------------------------------------
TEXT: H
TEXT: H
TEXT: H ------------------------------------------------------------
TEXT: H| Mos3 - instance parameters (output-only) |
TEXT: H|-----------------------------------------------------------+
TEXT: H| id Drain current |
TEXT: H| cd Drain current |
TEXT: H| ibd B-D junction current |
TEXT: H| ibs B-S junction current |
TEXT: H ------------------------------------------------------------
TEXT: H| is Source current |
TEXT: H| ig Gate current |
TEXT: H| ib Bulk current |
TEXT: H| vgs Gate-Source voltage |
TEXT: H|-----------------------------------------------------------+
TEXT: H| vds Drain-Source voltage |
TEXT: H| vbs Bulk-Source voltage |
TEXT: H| vbd Bulk-Drain voltage |
TEXT: H| dnode Number of drain node |
TEXT: H ------------------------------------------------------------
TEXT: H| gnode Number of gate node |
TEXT: H| snode Number of source node |
TEXT: H| bnode Number of bulk node |
TEXT: H| dnodeprime Number of internal drain node |
TEXT: H| snodeprime Number of internal source node |
TEXT: H| _c_o_n_t_i_n_u_e_d |
TEXT: H ------------------------------------------------------------
TEXT: H
TEXT: H
TEXT: H --------------------------------------------------------------
TEXT: H| Mos3 - instance output-only parameters - _c_o_n_t_i_n_u_e_d
TEXT: H|-------------------------------------------------------------+
TEXT: H|von Turn-on voltage |
TEXT: H|vdsat Saturation drain voltage |
TEXT: H|sourcevcrit Critical source voltage |
TEXT: H|drainvcrit Critical drain voltage |
TEXT: H --------------------------------------------------------------
TEXT: H|rs Source resistance |
TEXT: H|sourceconductanceSource conductance |
TEXT: H|rd Drain resistance |
TEXT: H|drainconductance Drain conductance |
TEXT: H|-------------------------------------------------------------+
TEXT: H|gm Transconductance |
TEXT: H|gds Drain-Source conductance |
TEXT: H|gmb Bulk-Source transconductance |
TEXT: H|gmbs Bulk-Source transconductance |
TEXT: H --------------------------------------------------------------
TEXT: H|gbd Bulk-Drain conductance |
TEXT: H|gbs Bulk-Source conductance |
TEXT: H|cbd Bulk-Drain capacitance |
TEXT: H|cbs Bulk-Source capacitance |
TEXT: H|-------------------------------------------------------------+
TEXT: H|cgs Gate-Source capacitance |
TEXT: H|cgd Gate-Drain capacitance |
TEXT: H|cgb Gate-Bulk capacitance |
TEXT: H cqgs Capacitance due to gate-source charge storage
TEXT: H| |
TEXT: H --------------------------------------------------------------
TEXT: H|cqgd Capacitance due to gate-drain charge storage|
TEXT: H|cqgb Capacitance due to gate-bulk charge storage |
TEXT: H|cqbd Capacitance due to bulk-drain charge storage|
TEXT: H|cqbs Capacitance due to bulk-source charge storage
TEXT: H|-------------------------------------------------------------+
TEXT: H|cbd0 Zero-Bias B-D junction capacitance |
TEXT: H|cbdsw0 Zero-Bias B-D sidewall capacitance |
TEXT: H|cbs0 Zero-Bias B-S junction capacitance |
TEXT: H|cbssw0 Zero-Bias B-S sidewall capacitance |
TEXT: H --------------------------------------------------------------
TEXT: H|qbs Bulk-Source charge storage |
TEXT: H|qgs Gate-Source charge storage |
TEXT: H|qgd Gate-Drain charge storage |
TEXT: H|qgb Gate-Bulk charge storage |
TEXT: H|qbd Bulk-Drain charge storage |
TEXT: H|p Instantaneous power |
TEXT: H --------------------------------------------------------------
TEXT: H
TEXT: H
TEXT: H ------------------------------------------------------------
TEXT: H| Mos3 - model parameters (input-only) |
TEXT: H|-----------------------------------------------------------+
TEXT: H| nmos N type MOSfet model |
TEXT: H| pmos P type MOSfet model |
TEXT: H ------------------------------------------------------------
TEXT: H
TEXT: H
TEXT: H ------------------------------------------------------------
TEXT: H| Mos3 - model parameters (input-output) |
TEXT: H|-----------------------------------------------------------+
TEXT: H| vto Threshold voltage |
TEXT: H| vt0 (null) |
TEXT: H| kp Transconductance parameter |
TEXT: H| gamma Bulk threshold parameter |
TEXT: H ------------------------------------------------------------
TEXT: H| phi Surface potential |
TEXT: H| rd Drain ohmic resistance |
TEXT: H| rs Source ohmic resistance |
TEXT: H| cbd B-D junction capacitance |
TEXT: H|-----------------------------------------------------------+
TEXT: H| cbs B-S junction capacitance |
TEXT: H| is Bulk junction sat. current |
TEXT: H| pb Bulk junction potential |
TEXT: H| cgso Gate-source overlap cap. |
TEXT: H ------------------------------------------------------------
TEXT: H| cgdo Gate-drain overlap cap. |
TEXT: H| cgbo Gate-bulk overlap cap. |
TEXT: H| rsh Sheet resistance |
TEXT: H| cj Bottom junction cap per area |
TEXT: H|-----------------------------------------------------------+
TEXT: H| mj Bottom grading coefficient |
TEXT: H| cjsw Side junction cap per area |
TEXT: H| mjsw Side grading coefficient |
TEXT: H| js Bulk jct. sat. current density |
TEXT: H ------------------------------------------------------------
TEXT: H| tox Oxide thickness |
TEXT: H| ld Lateral diffusion |
TEXT: H| u0 Surface mobility |
TEXT: H| uo (null) |
TEXT: H|-----------------------------------------------------------+
TEXT: H| fc Forward bias jct. fit parm. |
TEXT: H| nsub Substrate doping |
TEXT: H| tpg Gate type |
TEXT: H| nss Surface state density |
TEXT: H ------------------------------------------------------------
TEXT: H| vmax Maximum carrier drift velocity |
TEXT: H| xj Junction depth |
TEXT: H| nfs Fast surface state density |
TEXT: H| xd Depletion layer width |
TEXT: H|-----------------------------------------------------------+
TEXT: H| alpha Alpha |
TEXT: H| eta Vds dependence of threshold voltage |
TEXT: H| delta Width effect on threshold |
TEXT: H| input_delta (null) |
TEXT: H ------------------------------------------------------------
TEXT: H| theta Vgs dependence on mobility |
TEXT: H| kappa Kappa |
TEXT: H| tnom Parameter measurement temperature |
TEXT: H| kf Flicker noise coefficient |
TEXT: H| af Flicker noise exponent |
TEXT: H ------------------------------------------------------------
TEXT: H
TEXT: H
TEXT: H ------------------------------------------------------------
TEXT: H| Mos3 - model parameters (output-only) |
TEXT: H|-----------------------------------------------------------+
TEXT: H| type N-channel or P-channel MOS |
TEXT: H ------------------------------------------------------------
TEXT: H
SUBJECT: Mos6
TITLE: Mos6: Level 6 MOSfet model with Meyer capacitance model
TEXT: H
TEXT: H _B._2_0. _M_o_s_6: _L_e_v_e_l _6 _M_O_S_f_e_t _m_o_d_e_l _w_i_t_h _M_e_y_e_r _c_a_p_a_c_i_t_a_n_c_e
TEXT: H _m_o_d_e_l
TEXT: H
TEXT: H ------------------------------------------------------------
TEXT: H| Mos6 - instance parameters (input-only) |
TEXT: H|-----------------------------------------------------------+
TEXT: H| off Device initially off |
TEXT: H| ic Vector of D-S, G-S, B-S voltages |
TEXT: H ------------------------------------------------------------
TEXT: H
TEXT: H
TEXT: H ------------------------------------------------------------
TEXT: H| Mos6 - instance parameters (input-output) |
TEXT: H|-----------------------------------------------------------+
TEXT: H| l Length |
TEXT: H| w Width |
TEXT: H| ad Drain area |
TEXT: H| as Source area |
TEXT: H ------------------------------------------------------------
TEXT: H| pd Drain perimeter |
TEXT: H| ps Source perimeter |
TEXT: H| nrd Drain squares |
TEXT: H| nrs Source squares |
TEXT: H|-----------------------------------------------------------+
TEXT: H| icvds Initial D-S voltage |
TEXT: H| icvgs Initial G-S voltage |
TEXT: H| icvbs Initial B-S voltage |
TEXT: H| temp Instance temperature |
TEXT: H ------------------------------------------------------------
TEXT: H
TEXT: H
TEXT: H ------------------------------------------------------------
TEXT: H| Mos6 - instance parameters (output-only) |
TEXT: H|-----------------------------------------------------------+
TEXT: H| id Drain current |
TEXT: H| cd Drain current |
TEXT: H| is Source current |
TEXT: H| ig Gate current |
TEXT: H ------------------------------------------------------------
TEXT: H| ib Bulk current |
TEXT: H| ibs B-S junction capacitance |
TEXT: H| ibd B-D junction capacitance |
TEXT: H| vgs Gate-Source voltage |
TEXT: H|-----------------------------------------------------------+
TEXT: H| vds Drain-Source voltage |
TEXT: H| vbs Bulk-Source voltage |
TEXT: H| vbd Bulk-Drain voltage |
TEXT: H| dnode Number of the drain node |
TEXT: H ------------------------------------------------------------
TEXT: H| gnode Number of the gate node |
TEXT: H| snode Number of the source node |
TEXT: H| bnode Number of the node |
TEXT: H| dnodeprime Number of int. drain node |
TEXT: H| snodeprime Number of int. source node |
TEXT: H| _c_o_n_t_i_n_u_e_d |
TEXT: H ------------------------------------------------------------
TEXT: H
TEXT: H
TEXT: H --------------------------------------------------------------
TEXT: H| Mos6 - instance output-only parameters - _c_o_n_t_i_n_u_e_d
TEXT: H|-------------------------------------------------------------+
TEXT: H|rs Source resistance |
TEXT: H|sourceconductanceSource conductance |
TEXT: H|rd Drain resistance |
TEXT: H|drainconductance Drain conductance |
TEXT: H --------------------------------------------------------------
TEXT: H|von Turn-on voltage |
TEXT: H|vdsat Saturation drain voltage |
TEXT: H|sourcevcrit Critical source voltage |
TEXT: H|drainvcrit Critical drain voltage |
TEXT: H|-------------------------------------------------------------+
TEXT: H|gmbs Bulk-Source transconductance |
TEXT: H|gm Transconductance |
TEXT: H|gds Drain-Source conductance |
TEXT: H|gbd Bulk-Drain conductance |
TEXT: H --------------------------------------------------------------
TEXT: H|gbs Bulk-Source conductance |
TEXT: H|cgs Gate-Source capacitance |
TEXT: H|cgd Gate-Drain capacitance |
TEXT: H|cgb Gate-Bulk capacitance |
TEXT: H|-------------------------------------------------------------+
TEXT: H|cbd Bulk-Drain capacitance |
TEXT: H|cbs Bulk-Source capacitance |
TEXT: H|cbd0 Zero-Bias B-D junction capacitance |
TEXT: H|cbdsw0 |
TEXT: H --------------------------------------------------------------
TEXT: H|cbs0 Zero-Bias B-S junction capacitance |
TEXT: H|cbssw0 |
TEXT: H|cqgs Capacitance due to gate-source charge storage
TEXT: H|cqgd Capacitance due to gate-drain charge storage|
TEXT: H|-------------------------------------------------------------+
TEXT: H|cqgb Capacitance due to gate-bulk charge storage |
TEXT: H|cqbd Capacitance due to bulk-drain charge storage|
TEXT: H cqbs Capacitance due to bulk-source charge storage
TEXT: H|qgs Gate-Source charge storage |
TEXT: H --------------------------------------------------------------
TEXT: H|qgd Gate-Drain charge storage |
TEXT: H|qgb Gate-Bulk charge storage |
TEXT: H|qbd Bulk-Drain charge storage |
TEXT: H|qbs Bulk-Source charge storage |
TEXT: H|p Instaneous power |
TEXT: H --------------------------------------------------------------
TEXT: H
TEXT: H
TEXT: H ------------------------------------------------------------
TEXT: H| Mos6 - model parameters (input-only) |
TEXT: H|-----------------------------------------------------------+
TEXT: H| nmos N type MOSfet model |
TEXT: H| pmos P type MOSfet model |
TEXT: H ------------------------------------------------------------
TEXT: H
TEXT: H
TEXT: H ------------------------------------------------------------
TEXT: H| Mos6 - model parameters (input-output) |
TEXT: H|-----------------------------------------------------------+
TEXT: H| vto Threshold voltage |
TEXT: H| vt0 (null) |
TEXT: H| kv Saturation voltage factor |
TEXT: H| nv Saturation voltage coeff. |
TEXT: H ------------------------------------------------------------
TEXT: H| kc Saturation current factor |
TEXT: H| nc Saturation current coeff. |
TEXT: H| nvth Threshold voltage coeff. |
TEXT: H| ps Sat. current modification par. |
TEXT: H|-----------------------------------------------------------+
TEXT: H| gamma Bulk threshold parameter |
TEXT: H| gamma1 Bulk threshold parameter 1 |
TEXT: H| sigma Static feedback effect par. |
TEXT: H| phi Surface potential |
TEXT: H ------------------------------------------------------------
TEXT: H| lambda Channel length modulation param. |
TEXT: H| lambda0 Channel length modulation param. 0 |
TEXT: H| lambda1 Channel length modulation param. 1 |
TEXT: H| rd Drain ohmic resistance |
TEXT: H|-----------------------------------------------------------+
TEXT: H| rs Source ohmic resistance |
TEXT: H| cbd B-D junction capacitance |
TEXT: H| cbs B-S junction capacitance |
TEXT: H| is Bulk junction sat. current |
TEXT: H ------------------------------------------------------------
TEXT: H| pb Bulk junction potential |
TEXT: H| cgso Gate-source overlap cap. |
TEXT: H| cgdo Gate-drain overlap cap. |
TEXT: H| cgbo Gate-bulk overlap cap. |
TEXT: H|-----------------------------------------------------------+
TEXT: H| rsh Sheet resistance |
TEXT: H| cj Bottom junction cap per area |
TEXT: H| mj Bottom grading coefficient |
TEXT: H| cjsw Side junction cap per area |
TEXT: H ------------------------------------------------------------
TEXT: H| mjsw Side grading coefficient |
TEXT: H| js Bulk jct. sat. current density |
TEXT: H| ld Lateral diffusion |
TEXT: H| tox Oxide thickness |
TEXT: H|-----------------------------------------------------------+
TEXT: H| u0 Surface mobility |
TEXT: H| uo (null) |
TEXT: H| fc Forward bias jct. fit parm. |
TEXT: H| tpg Gate type |
TEXT: H ------------------------------------------------------------
TEXT: H| nsub Substrate doping |
TEXT: H| nss Surface state density |
TEXT: H| tnom Parameter measurement temperature |
TEXT: H ------------------------------------------------------------
TEXT: H
TEXT: H
TEXT: H ------------------------------------------------------------
TEXT: H| Mos6 - model parameters (output-only) |
TEXT: H|-----------------------------------------------------------+
TEXT: H| type N-channel or P-channel MOS |
TEXT: H ------------------------------------------------------------
TEXT: H
SUBJECT: Resistor
TITLE: Resistor: Simple linear resistor
TEXT: H
TEXT: H _B._2_1. _R_e_s_i_s_t_o_r: _S_i_m_p_l_e _l_i_n_e_a_r _r_e_s_i_s_t_o_r
TEXT: H
TEXT: H ------------------------------------------------------------
TEXT: H| Resistor - instance parameters (input-output) |
TEXT: H|-----------------------------------------------------------+
TEXT: H| resistance Resistance |
TEXT: H| temp Instance operating temperature |
TEXT: H| l Length |
TEXT: H| w Width |
TEXT: H ------------------------------------------------------------
TEXT: H
TEXT: H
TEXT: H ------------------------------------------------------------
TEXT: H| Resistor - instance parameters (output-only) |
TEXT: H|-----------------------------------------------------------+
TEXT: H| i Current |
TEXT: H| p Power |
TEXT: H ------------------------------------------------------------
TEXT: H
TEXT: H
TEXT: H ------------------------------------------------------------
TEXT: H| Resistor - model parameters (input-only) |
TEXT: H|-----------------------------------------------------------+
TEXT: H| r Device is a resistor model |
TEXT: H ------------------------------------------------------------
TEXT: H
TEXT: H
TEXT: H ------------------------------------------------------------
TEXT: H| Resistor - model parameters (input-output) |
TEXT: H|-----------------------------------------------------------+
TEXT: H| rsh Sheet resistance |
TEXT: H| narrow Narrowing of resistor |
TEXT: H| tc1 First order temp. coefficient |
TEXT: H| tc2 Second order temp. coefficient |
TEXT: H| defw Default device width |
TEXT: H| tnom Parameter measurement temperature |
TEXT: H ------------------------------------------------------------
TEXT: H
SUBJECT: Switch
TITLE: Switch: Ideal voltage controlled switch
TEXT: H
TEXT: H _B._2_2. _S_w_i_t_c_h: _I_d_e_a_l _v_o_l_t_a_g_e _c_o_n_t_r_o_l_l_e_d _s_w_i_t_c_h
TEXT: H
TEXT: H ------------------------------------------------------------
TEXT: H| Switch - instance parameters (input-only) |
TEXT: H|-----------------------------------------------------------+
TEXT: H| on Switch initially closed |
TEXT: H| off Switch initially open |
TEXT: H ------------------------------------------------------------
TEXT: H
TEXT: H
TEXT: H ------------------------------------------------------------
TEXT: H| Switch - instance parameters (input-output) |
TEXT: H|-----------------------------------------------------------+
TEXT: H| pos_node Positive node of switch |
TEXT: H| neg_node Negative node of switch |
TEXT: H ------------------------------------------------------------
TEXT: H
TEXT: H
TEXT: H ------------------------------------------------------------
TEXT: H| Switch - instance parameters (output-only) |
TEXT: H|-----------------------------------------------------------+
TEXT: H| cont_p_node Positive contr. node of switch |
TEXT: H| cont_n_node Positive contr. node of switch |
TEXT: H| i Switch current |
TEXT: H| p Switch power |
TEXT: H ------------------------------------------------------------
TEXT: H
TEXT: H
TEXT: H ------------------------------------------------------------
TEXT: H| Switch - model parameters (input-output) |
TEXT: H|-----------------------------------------------------------+
TEXT: H| sw Switch model |
TEXT: H| vt Threshold voltage |
TEXT: H| vh Hysteresis voltage |
TEXT: H| ron Resistance when closed |
TEXT: H| roff Resistance when open |
TEXT: H ------------------------------------------------------------
TEXT: H
TEXT: H
TEXT: H ------------------------------------------------------------
TEXT: H| Switch - model parameters (output-only) |
TEXT: H|-----------------------------------------------------------+
TEXT: H| gon Conductance when closed |
TEXT: H| goff Conductance when open |
TEXT: H ------------------------------------------------------------
TEXT: H
SUBJECT: Tranline
TITLE: Tranline: Lossless transmission line
TEXT: H
TEXT: H _B._2_3. _T_r_a_n_l_i_n_e: _L_o_s_s_l_e_s_s _t_r_a_n_s_m_i_s_s_i_o_n _l_i_n_e
TEXT: H
TEXT: H ------------------------------------------------------------
TEXT: H| Tranline - instance parameters (input-only) |
TEXT: H|-----------------------------------------------------------+
TEXT: H| ic Initial condition vector:v1,i1,v2,i2 |
TEXT: H ------------------------------------------------------------
TEXT: H
TEXT: H
TEXT: H ------------------------------------------------------------
TEXT: H| Tranline - instance parameters (input-output) |
TEXT: H|-----------------------------------------------------------+
TEXT: H| z0 Characteristic impedance |
TEXT: H| zo (null) |
TEXT: H| f Frequency |
TEXT: H| td Transmission delay |
TEXT: H ------------------------------------------------------------
TEXT: H| nl Normalized length at frequency given |
TEXT: H| v1 Initial voltage at end 1 |
TEXT: H| v2 Initial voltage at end 2 |
TEXT: H| i1 Initial current at end 1 |
TEXT: H| i2 Initial current at end 2 |
TEXT: H ------------------------------------------------------------
TEXT: H
TEXT: H
TEXT: H ------------------------------------------------------------
TEXT: H| Tranline - instance parameters (output-only) |
TEXT: H|-----------------------------------------------------------+
TEXT: H| rel Rel. rate of change of deriv. for bkpt |
TEXT: H| abs Abs. rate of change of deriv. for bkpt |
TEXT: H| pos_node1 Positive node of end 1 of t. line |
TEXT: H| neg_node1 Negative node of end 1 of t. line |
TEXT: H ------------------------------------------------------------
TEXT: H| pos_node2 Positive node of end 2 of t. line |
TEXT: H| neg_node2 Negative node of end 2 of t. line |
TEXT: H| delays Delayed values of excitation |
TEXT: H ------------------------------------------------------------
TEXT: H
SUBJECT: VCCS
TITLE: VCCS: Voltage controlled current source
TEXT: H
TEXT: H _B._2_4. _V_C_C_S: _V_o_l_t_a_g_e _c_o_n_t_r_o_l_l_e_d _c_u_r_r_e_n_t _s_o_u_r_c_e
TEXT: H
TEXT: H ------------------------------------------------------------
TEXT: H| VCCS - instance parameters (input-only) |
TEXT: H|-----------------------------------------------------------+
TEXT: H| ic Initial condition of controlling source |
TEXT: H ------------------------------------------------------------
TEXT: H
TEXT: H
TEXT: H ------------------------------------------------------------
TEXT: H| VCCS - instance parameters (input-output) |
TEXT: H|-----------------------------------------------------------+
TEXT: H| gain Transconductance of source (gain) |
TEXT: H ------------------------------------------------------------
TEXT: H
TEXT: H
TEXT: H ------------------------------------------------------------
TEXT: H| VCCS - instance parameters (output-only) |
TEXT: H|-----------------------------------------------------------+
TEXT: H| pos_node Positive node of source |
TEXT: H| neg_node Negative node of source |
TEXT: H| cont_p_node Positive node of contr. source |
TEXT: H| cont_n_node Negative node of contr. source |
TEXT: H ------------------------------------------------------------
TEXT: H| i Output current |
TEXT: H| v Voltage across output |
TEXT: H| p Power |
TEXT: H ------------------------------------------------------------
TEXT: H
SUBJECT: VCVS
TITLE: VCVS: Voltage controlled voltage source
TEXT: H
TEXT: H _B._2_5. _V_C_V_S: _V_o_l_t_a_g_e _c_o_n_t_r_o_l_l_e_d _v_o_l_t_a_g_e _s_o_u_r_c_e
TEXT: H
TEXT: H ------------------------------------------------------------
TEXT: H| VCVS - instance parameters (input-only) |
TEXT: H|-----------------------------------------------------------+
TEXT: H| ic Initial condition of controlling source |
TEXT: H ------------------------------------------------------------
TEXT: H
TEXT: H
TEXT: H ------------------------------------------------------------
TEXT: H| VCVS - instance parameters (input-output) |
TEXT: H|-----------------------------------------------------------+
TEXT: H| gain Voltage gain |
TEXT: H ------------------------------------------------------------
TEXT: H
TEXT: H
TEXT: H ------------------------------------------------------------
TEXT: H| VCVS - instance parameters (output-only) |
TEXT: H|-----------------------------------------------------------+
TEXT: H| pos_node Positive node of source |
TEXT: H| neg_node Negative node of source |
TEXT: H| cont_p_node Positive node of contr. source |
TEXT: H cont_n_node Negative node of contr. source
TEXT: H ------------------------------------------------------------
TEXT: H| i Output current |
TEXT: H| v Output voltage |
TEXT: H| p Power |
TEXT: H ------------------------------------------------------------
TEXT: H
SUBJECT: Vsource
TITLE: Vsource: Independent voltage source
TEXT: H
TEXT: H _B._2_6. _V_s_o_u_r_c_e: _I_n_d_e_p_e_n_d_e_n_t _v_o_l_t_a_g_e _s_o_u_r_c_e
TEXT: H
TEXT: H ------------------------------------------------------------
TEXT: H| Vsource - instance parameters (input-only) |
TEXT: H|-----------------------------------------------------------+
TEXT: H| pulse Pulse description |
TEXT: H| sine Sinusoidal source description |
TEXT: H| sin Sinusoidal source description |
TEXT: H| exp Exponential source description |
TEXT: H ------------------------------------------------------------
TEXT: H| pwl Piecewise linear description |
TEXT: H| sffm Single freq. FM descripton |
TEXT: H| ac AC magnitude, phase vector |
TEXT: H| distof1 f1 input for distortion |
TEXT: H| distof2 f2 input for distortion |
TEXT: H ------------------------------------------------------------
TEXT: H
TEXT: H
TEXT: H ------------------------------------------------------------
TEXT: H| Vsource - instance parameters (input-output) |
TEXT: H|-----------------------------------------------------------+
TEXT: H| dc D.C. source value |
TEXT: H| acmag A.C. Magnitude |
TEXT: H| acphase A.C. Phase |
TEXT: H ------------------------------------------------------------
TEXT: H
TEXT: H
TEXT: H ------------------------------------------------------------
TEXT: H| Vsource - instance parameters (output-only) |
TEXT: H|-----------------------------------------------------------+
TEXT: H| pos_node Positive node of source |
TEXT: H| neg_node Negative node of source |
TEXT: H| function Function of the source |
TEXT: H| order Order of the source function |
TEXT: H ------------------------------------------------------------
TEXT: H| coeffs Coefficients for the function |
TEXT: H| acreal AC real part |
TEXT: H| acimag AC imaginary part |
TEXT: H| i Voltage source current |
TEXT: H| p Instantaneous power |
TEXT: H ------------------------------------------------------------
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