167 lines
9.2 KiB
C
167 lines
9.2 KiB
C
/**********
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Copyright 1990 Regents of the University of California. All rights reserved.
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Author: 1987 Thomas L. Quarles
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**********/
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#include "ngspice.h"
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#include <stdio.h>
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#include "devdefs.h"
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#include "ifsim.h"
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#include "mos3defs.h"
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#include "suffix.h"
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IFparm MOS3pTable[] = { /* parameters */
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IOPU("l", MOS3_L, IF_REAL , "Length"),
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IOPU("w", MOS3_W, IF_REAL , "Width"),
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IOPU("ad", MOS3_AD, IF_REAL , "Drain area"),
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IOPU("as", MOS3_AS, IF_REAL , "Source area"),
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IOPU("pd", MOS3_PD, IF_REAL , "Drain perimeter"),
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IOPU("ps", MOS3_PS, IF_REAL , "Source perimeter"),
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OP("id", MOS3_CD, IF_REAL, "Drain current"),
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OPR("cd", MOS3_CD, IF_REAL, "Drain current"),
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OPU("ibd", MOS3_CBD, IF_REAL, "B-D junction current"),
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OPU("ibs", MOS3_CBS, IF_REAL, "B-S junction current"),
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OPU("is", MOS3_CS, IF_REAL, "Source current"),
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OPU("ig", MOS3_CG, IF_REAL, "Gate current"),
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OPU("ib", MOS3_CB, IF_REAL, "Bulk current"),
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OP("vgs", MOS3_VGS, IF_REAL, "Gate-Source voltage"),
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OP("vds", MOS3_VDS, IF_REAL, "Drain-Source voltage"),
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OP("vbs", MOS3_VBS, IF_REAL, "Bulk-Source voltage"),
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OPU("vbd", MOS3_VBD, IF_REAL, "Bulk-Drain voltage"),
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IOPU("nrd", MOS3_NRD, IF_REAL , "Drain squares"),
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IOPU("nrs", MOS3_NRS, IF_REAL , "Source squares"),
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IP("off", MOS3_OFF, IF_FLAG , "Device initially off"),
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IOPAU("icvds", MOS3_IC_VDS, IF_REAL , "Initial D-S voltage"),
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IOPAU("icvgs", MOS3_IC_VGS, IF_REAL , "Initial G-S voltage"),
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IOPAU("icvbs", MOS3_IC_VBS, IF_REAL , "Initial B-S voltage"),
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IOPU("ic", MOS3_IC, IF_REALVEC, "Vector of D-S, G-S, B-S voltages"),
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IOPU("temp", MOS3_TEMP, IF_REAL , "Instance operating temperature"),
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IP("sens_l", MOS3_L_SENS, IF_FLAG, "flag to request sensitivity WRT length"),
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IP("sens_w", MOS3_W_SENS, IF_FLAG, "flag to request sensitivity WRT width"),
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OPU("dnode", MOS3_DNODE, IF_INTEGER, "Number of drain node"),
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OPU("gnode", MOS3_GNODE, IF_INTEGER, "Number of gate node"),
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OPU("snode", MOS3_SNODE, IF_INTEGER, "Number of source node"),
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OPU("bnode", MOS3_BNODE, IF_INTEGER, "Number of bulk node"),
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OPU("dnodeprime", MOS3_DNODEPRIME,IF_INTEGER,"Number of internal drain node"),
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OPU("snodeprime", MOS3_SNODEPRIME,IF_INTEGER,"Number of internal source node"),
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OP("von", MOS3_VON, IF_REAL, "Turn-on voltage"),
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OP("vdsat", MOS3_VDSAT, IF_REAL, "Saturation drain voltage"),
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OPU("sourcevcrit", MOS3_SOURCEVCRIT, IF_REAL, "Critical source voltage"),
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OPU("drainvcrit", MOS3_DRAINVCRIT, IF_REAL, "Critical drain voltage"),
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OP("rs", MOS3_SOURCERESIST, IF_REAL, "Source resistance"),
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OPU("sourceconductance", MOS3_SOURCECONDUCT, IF_REAL, "Source conductance"),
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OP("rd", MOS3_DRAINRESIST, IF_REAL, "Drain resistance"),
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OPU("drainconductance", MOS3_DRAINCONDUCT, IF_REAL, "Drain conductance"),
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OP("gm", MOS3_GM, IF_REAL, "Transconductance"),
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OP("gds", MOS3_GDS, IF_REAL, "Drain-Source conductance"),
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OP("gmb", MOS3_GMBS, IF_REAL, "Bulk-Source transconductance"),
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OPR("gmbs", MOS3_GMBS, IF_REAL, "Bulk-Source transconductance"),
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OPU("gbd", MOS3_GBD, IF_REAL, "Bulk-Drain conductance"),
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OPU("gbs", MOS3_GBS, IF_REAL, "Bulk-Source conductance"),
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OP("cbd", MOS3_CAPBD, IF_REAL, "Bulk-Drain capacitance"),
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OP("cbs", MOS3_CAPBS, IF_REAL, "Bulk-Source capacitance"),
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OP("cgs", MOS3_CAPGS, IF_REAL, "Gate-Source capacitance"),
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/* OPR("cgs", MOS3_CGS, IF_REAL , "Gate-Source capacitance"),*/
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OP("cgd", MOS3_CAPGD, IF_REAL, "Gate-Drain capacitance"),
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/* OPR("cgd", MOS3_CGD, IF_REAL , "Gate-Drain capacitance"),*/
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OP("cgb", MOS3_CAPGB, IF_REAL, "Gate-Bulk capacitance"),
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OPU("cqgs",MOS3_CQGS,IF_REAL,"Capacitance due to gate-source charge storage"),
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OPU("cqgd",MOS3_CQGD, IF_REAL,"Capacitance due to gate-drain charge storage"),
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OPU("cqgb",MOS3_CQGB, IF_REAL,"Capacitance due to gate-bulk charge storage"),
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OPU("cqbd",MOS3_CQBD,IF_REAL,"Capacitance due to bulk-drain charge storage"),
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OPU("cqbs",MOS3_CQBS,IF_REAL,"Capacitance due to bulk-source charge storage"),
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OPU("cbd0",MOS3_CAPZEROBIASBD,IF_REAL,"Zero-Bias B-D junction capacitance"),
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OPU("cbdsw0",MOS3_CAPZEROBIASBDSW,IF_REAL,
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"Zero-Bias B-D sidewall capacitance"),
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OPU("cbs0",MOS3_CAPZEROBIASBS,IF_REAL,"Zero-Bias B-S junction capacitance"),
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OPU("cbssw0",MOS3_CAPZEROBIASBSSW,IF_REAL,
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"Zero-Bias B-S sidewall capacitance"),
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OPU("qbs", MOS3_QBS, IF_REAL, "Bulk-Source charge storage"),
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OPU("qgs", MOS3_QGS, IF_REAL, "Gate-Source charge storage"),
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OPU("qgd", MOS3_QGD, IF_REAL, "Gate-Drain charge storage"),
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OPU("qgb", MOS3_QGB, IF_REAL, "Gate-Bulk charge storage"),
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OPU("qbd", MOS3_QBD, IF_REAL, "Bulk-Drain charge storage"),
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OPU("p", MOS3_POWER, IF_REAL, "Instantaneous power"),
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OPU("sens_l_dc", MOS3_L_SENS_DC, IF_REAL, "dc sensitivity wrt length"),
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OPU("sens_l_real",MOS3_L_SENS_REAL, IF_REAL,
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"real part of ac sensitivity wrt length"),
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OPU("sens_l_imag",MOS3_L_SENS_IMAG, IF_REAL,
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"imag part of ac sensitivity wrt length"),
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OPU("sens_l_cplx",MOS3_L_SENS_CPLX, IF_COMPLEX, "ac sensitivity wrt length"),
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OPU("sens_l_mag", MOS3_L_SENS_MAG, IF_REAL,
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"sensitivity wrt l of ac magnitude"),
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OPU("sens_l_ph", MOS3_L_SENS_PH, IF_REAL, "sensitivity wrt l of ac phase"),
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OPU("sens_w_dc", MOS3_W_SENS_DC, IF_REAL, "dc sensitivity wrt width"),
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OPU("sens_w_real",MOS3_W_SENS_REAL, IF_REAL,
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"real part of ac sensitivity wrt width"),
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OPU("sens_w_imag",MOS3_W_SENS_IMAG, IF_REAL,
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"imag part of ac sensitivity wrt width"),
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OPU("sens_w_mag", MOS3_W_SENS_MAG, IF_REAL,
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"sensitivity wrt w of ac magnitude"),
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OPU("sens_w_ph", MOS3_W_SENS_PH, IF_REAL, "sensitivity wrt w of ac phase"),
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OPU("sens_w_cplx",MOS3_W_SENS_CPLX, IF_COMPLEX, "ac sensitivity wrt width")
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};
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IFparm MOS3mPTable[] = { /* model parameters */
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OP("type", MOS3_MOD_TYPE, IF_STRING ,"N-channel or P-channel MOS"),
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IP("nmos", MOS3_MOD_NMOS, IF_FLAG ,"N type MOSfet model"),
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IP("pmos", MOS3_MOD_PMOS, IF_FLAG ,"P type MOSfet model"),
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IOP("vto", MOS3_MOD_VTO, IF_REAL ,"Threshold voltage"),
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IOPR("vt0", MOS3_MOD_VTO, IF_REAL ,"Threshold voltage"),
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IOP("kp", MOS3_MOD_KP, IF_REAL ,"Transconductance parameter"),
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IOP("gamma", MOS3_MOD_GAMMA, IF_REAL ,"Bulk threshold parameter"),
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IOP("phi", MOS3_MOD_PHI, IF_REAL ,"Surface potential"),
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IOP("rd", MOS3_MOD_RD, IF_REAL ,"Drain ohmic resistance"),
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IOP("rs", MOS3_MOD_RS, IF_REAL ,"Source ohmic resistance"),
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IOPA("cbd", MOS3_MOD_CBD, IF_REAL ,"B-D junction capacitance"),
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IOPA("cbs", MOS3_MOD_CBS, IF_REAL ,"B-S junction capacitance"),
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IOP("is", MOS3_MOD_IS, IF_REAL ,"Bulk junction sat. current"),
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IOP("pb", MOS3_MOD_PB, IF_REAL ,"Bulk junction potential"),
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IOPA("cgso", MOS3_MOD_CGSO, IF_REAL ,"Gate-source overlap cap."),
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IOPA("cgdo", MOS3_MOD_CGDO, IF_REAL ,"Gate-drain overlap cap."),
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IOPA("cgbo", MOS3_MOD_CGBO, IF_REAL ,"Gate-bulk overlap cap."),
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IOP("rsh", MOS3_MOD_RSH, IF_REAL ,"Sheet resistance"),
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IOPA("cj", MOS3_MOD_CJ, IF_REAL ,"Bottom junction cap per area"),
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IOP("mj", MOS3_MOD_MJ, IF_REAL ,"Bottom grading coefficient"),
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IOPA("cjsw", MOS3_MOD_CJSW, IF_REAL ,"Side junction cap per area"),
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IOP("mjsw", MOS3_MOD_MJSW, IF_REAL ,"Side grading coefficient"),
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IOPU("js", MOS3_MOD_JS, IF_REAL ,"Bulk jct. sat. current density"),
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IOP("tox", MOS3_MOD_TOX, IF_REAL ,"Oxide thickness"),
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IOP("ld", MOS3_MOD_LD, IF_REAL ,"Lateral diffusion"),
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IOP("u0", MOS3_MOD_U0, IF_REAL ,"Surface mobility"),
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IOPR("uo", MOS3_MOD_U0, IF_REAL ,"Surface mobility"),
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IOP("fc", MOS3_MOD_FC, IF_REAL ,"Forward bias jct. fit parm."),
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IOP("nsub", MOS3_MOD_NSUB, IF_REAL ,"Substrate doping"),
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IOP("tpg", MOS3_MOD_TPG, IF_INTEGER,"Gate type"),
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IOP("nss", MOS3_MOD_NSS, IF_REAL ,"Surface state density"),
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IOP("vmax", MOS3_MOD_VMAX, IF_REAL ,"Maximum carrier drift velocity"),
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IOP("xj", MOS3_MOD_XJ, IF_REAL ,"Junction depth"),
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IOP("nfs", MOS3_MOD_NFS, IF_REAL ,"Fast surface state density"),
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IOP("xd", MOS3_MOD_XD, IF_REAL ,"Depletion layer width"),
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IOP("alpha", MOS3_MOD_ALPHA, IF_REAL ,"Alpha"),
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IOP("eta", MOS3_MOD_ETA, IF_REAL ,"Vds dependence of threshold voltage"),
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IOP("delta", MOS3_MOD_DELTA, IF_REAL ,"Width effect on threshold"),
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IOPR("input_delta", MOS3_DELTA, IF_REAL ,""),
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IOP("theta", MOS3_MOD_THETA, IF_REAL ,"Vgs dependence on mobility"),
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IOP("kappa", MOS3_MOD_KAPPA, IF_REAL ,"Kappa"),
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IOPU("tnom", MOS3_MOD_TNOM, IF_REAL ,"Parameter measurement temperature"),
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IOP("kf", MOS3_MOD_KF, IF_REAL ,"Flicker noise coefficient"),
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IOP("af", MOS3_MOD_AF, IF_REAL ,"Flicker noise exponent")
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};
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char *MOS3names[] = {
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"Drain",
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"Gate",
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"Source",
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"Bulk"
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};
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int MOS3nSize = NUMELEMS(MOS3names);
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int MOS3pTSize = NUMELEMS(MOS3pTable);
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int MOS3mPTSize = NUMELEMS(MOS3mPTable);
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int MOS3iSize = sizeof(MOS3instance);
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int MOS3mSize = sizeof(MOS3model);
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