564 lines
18 KiB
C
564 lines
18 KiB
C
/**********
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Copyright 1990 Regents of the University of California. All rights reserved.
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Author: 1985 Thomas L. Quarles
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Modified: 2000 AlansFIxes
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**********/
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#ifndef MOS2
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#define MOS2
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#include "ngspice/ifsim.h"
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#include "ngspice/cktdefs.h"
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#include "ngspice/gendefs.h"
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#include "ngspice/complex.h"
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#include "ngspice/noisedef.h"
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/* declarations for level 2 MOSFETs */
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/* indices to the array of MOSFET(2) noise sources */
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enum {
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MOS2RDNOIZ = 0,
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MOS2RSNOIZ,
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MOS2IDNOIZ,
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MOS2FLNOIZ,
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MOS2TOTNOIZ,
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MOS2NSRCS,
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};
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/* the number of MOS2FET noise sources */
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/* information needed for each instance */
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typedef struct sMOS2instance {
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struct GENinstance gen;
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#define MOS2modPtr(inst) ((struct sMOS2model *)((inst)->gen.GENmodPtr))
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#define MOS2nextInstance(inst) ((struct sMOS2instance *)((inst)->gen.GENnextInstance))
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#define MOS2name gen.GENname
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#define MOS2states gen.GENstate
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const int MOS2dNode; /* number of the gate node of the mosfet */
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const int MOS2gNode; /* number of the gate node of the mosfet */
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const int MOS2sNode; /* number of the source node of the mosfet */
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const int MOS2bNode; /* number of the bulk node of the mosfet */
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int MOS2dNodePrime; /* number of the internal drain node of the mosfet */
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int MOS2sNodePrime; /* number of the internal source node of the mosfet */
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int MOS2mode; /* device mode : 1 = normal, -1 = inverse */
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unsigned MOS2mGiven :1;
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unsigned MOS2off :1;/* non-zero to indicate device is off for dc analysis*/
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unsigned MOS2lGiven :1;
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unsigned MOS2wGiven :1;
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unsigned MOS2drainAreaGiven :1;
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unsigned MOS2sourceAreaGiven :1;
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unsigned MOS2drainSquaresGiven :1;
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unsigned MOS2sourceSquaresGiven :1;
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unsigned MOS2drainPerimiterGiven :1;
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unsigned MOS2sourcePerimiterGiven :1;
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unsigned MOS2dNodePrimeSet :1;
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unsigned MOS2sNodePrimeSet :1;
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unsigned MOS2icVBSGiven :1;
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unsigned MOS2icVDSGiven :1;
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unsigned MOS2icVGSGiven :1;
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unsigned MOS2vonGiven :1;
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unsigned MOS2vdsatGiven :1;
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unsigned MOS2tempGiven :1; /* per-instance temperature specified? */
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unsigned MOS2dtempGiven :1; /* per-instance temperature difference specified? */
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unsigned MOS2sens_l :1; /* field which indicates whether
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length of the mosfet is a design
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parameter or not */
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unsigned MOS2sens_w :1; /* field which indicates whether
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width of the mosfet is a design
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parameter or not */
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unsigned MOS2senPertFlag :1; /* indictes whether the the parameter of
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the particular instance is to be perturbed */
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double *MOS2DdPtr; /* pointer to sparse matrix element at
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* (Drain node,drain node) */
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double *MOS2GgPtr; /* pointer to sparse matrix element at
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* (gate node,gate node) */
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double *MOS2SsPtr; /* pointer to sparse matrix element at
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* (source node,source node) */
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double *MOS2BbPtr; /* pointer to sparse matrix element at
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* (bulk node,bulk node) */
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double *MOS2DPdpPtr; /* pointer to sparse matrix element at
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* (drain prime node,drain prime node) */
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double *MOS2SPspPtr; /* pointer to sparse matrix element at
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* (source prime node,source prime node) */
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double *MOS2DdpPtr; /* pointer to sparse matrix element at
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* (drain node,drain prime node) */
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double *MOS2GbPtr; /* pointer to sparse matrix element at
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* (gate node,bulk node) */
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double *MOS2GdpPtr; /* pointer to sparse matrix element at
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* (gate node,drain prime node) */
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double *MOS2GspPtr; /* pointer to sparse matrix element at
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* (gate node,source prime node) */
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double *MOS2SspPtr; /* pointer to sparse matrix element at
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* (source node,source prime node) */
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double *MOS2BdpPtr; /* pointer to sparse matrix element at
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* (bulk node,drain prime node) */
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double *MOS2BspPtr; /* pointer to sparse matrix element at
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* (bulk node,source prime node) */
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double *MOS2DPspPtr; /* pointer to sparse matrix element at
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* (drain prime node,source prime node) */
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double *MOS2DPdPtr; /* pointer to sparse matrix element at
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* (drain prime node,drain node) */
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double *MOS2BgPtr; /* pointer to sparse matrix element at
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* (bulk node,gate node) */
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double *MOS2DPgPtr; /* pointer to sparse matrix element at
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* (drain prime node,gate node) */
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double *MOS2SPgPtr; /* pointer to sparse matrix element at
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* (source prime node,gate node) */
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double *MOS2SPsPtr; /* pointer to sparse matrix element at
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* (source prime node,source node) */
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double *MOS2DPbPtr; /* pointer to sparse matrix element at
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* (drain prime node,bulk node) */
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double *MOS2SPbPtr; /* pointer to sparse matrix element at
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* (source prime node,bulk node) */
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double *MOS2SPdpPtr; /* pointer to sparse matrix element at
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* (source prime node,drain prime node) */
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int MOS2senParmNo; /* parameter # for sensitivity use;
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set equal to 0 if neither length
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nor width of the mosfet is a design
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parameter */
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double MOS2cgs;
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double MOS2cgd;
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double MOS2cgb;
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double *MOS2sens;
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#define MOS2senCgs MOS2sens /* contains pertured values of cgs */
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#define MOS2senCgd MOS2sens + 6 /* contains perturbed values of cgd*/
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#define MOS2senCgb MOS2sens + 12 /* contains perturbed values of cgb*/
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#define MOS2senCbd MOS2sens + 18 /* contains perturbed values of cbd*/
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#define MOS2senCbs MOS2sens + 24 /* contains perturbed values of cbs*/
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#define MOS2senGds MOS2sens + 30 /* contains perturbed values of gds*/
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#define MOS2senGbs MOS2sens + 36 /* contains perturbed values of gbs*/
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#define MOS2senGbd MOS2sens + 42 /* contains perturbed values of gbd*/
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#define MOS2senGm MOS2sens + 48 /* contains perturbed values of gm*/
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#define MOS2senGmbs MOS2sens + 54 /* contains perturbed values of gmbs*/
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#define MOS2dphigs_dl MOS2sens + 60
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#define MOS2dphigd_dl MOS2sens + 61
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#define MOS2dphigb_dl MOS2sens + 62
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#define MOS2dphibs_dl MOS2sens + 63
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#define MOS2dphibd_dl MOS2sens + 64
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#define MOS2dphigs_dw MOS2sens + 65
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#define MOS2dphigd_dw MOS2sens + 66
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#define MOS2dphigb_dw MOS2sens + 67
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#define MOS2dphibs_dw MOS2sens + 68
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#define MOS2dphibd_dw MOS2sens + 69
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double MOS2temp; /* temperature at which this instance operates */
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double MOS2dtemp; /* difference of instance temperature from circuit temperature */
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double MOS2tTransconductance; /* temperature corrected transconductance*/
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double MOS2tSurfMob; /* temperature corrected surface mobility */
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double MOS2tPhi; /* temperature corrected Phi */
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double MOS2tVto; /* temperature corrected Vto */
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double MOS2tSatCur; /* temperature corrected saturation Cur. */
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double MOS2tSatCurDens; /* temperature corrected saturation Cur. density*/
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double MOS2tCbd; /* temperature corrected B-D Capacitance */
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double MOS2tCbs; /* temperature corrected B-S Capacitance */
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double MOS2tCj; /* temperature corrected Bulk bottom Capacitance */
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double MOS2tCjsw; /* temperature corrected Bulk side Capacitance */
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double MOS2tBulkPot; /* temperature corrected Bulk potential */
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double MOS2tDepCap; /* temperature adjusted transition point in */
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/* the cureve matching Fc * Vj */
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double MOS2tVbi; /* temperature adjusted Vbi */
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double MOS2m; /* parallel device multiplier */
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double MOS2l; /* the length of the channel region */
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double MOS2w; /* the width of the channel region */
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double MOS2drainArea; /* the area of the drain diffusion */
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double MOS2sourceArea; /* the area of the source diffusion */
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double MOS2drainSquares; /* the length of the drain in squares */
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double MOS2sourceSquares; /* the length of the source in squares */
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double MOS2drainPerimiter;
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double MOS2sourcePerimiter;
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double MOS2sourceConductance; /*conductance of source(or 0):set in setup*/
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double MOS2drainConductance; /*conductance of drain(or 0):set in setup*/
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double MOS2icVBS; /* initial condition B-S voltage */
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double MOS2icVDS; /* initial condition D-S voltage */
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double MOS2icVGS; /* initial condition G-S voltage */
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double MOS2von;
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double MOS2vdsat;
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double MOS2sourceVcrit; /* Vcrit for pos. vds */
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double MOS2drainVcrit; /* Vcrit for pos. vds */
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double MOS2cd;
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double MOS2cbs;
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double MOS2cbd;
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double MOS2gmbs;
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double MOS2gm;
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double MOS2gds;
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double MOS2gbd;
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double MOS2gbs;
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double MOS2capbd;
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double MOS2capbs;
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double MOS2Cbd;
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double MOS2Cbdsw;
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double MOS2Cbs;
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double MOS2Cbssw;
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double MOS2f2d;
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double MOS2f3d;
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double MOS2f4d;
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double MOS2f2s;
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double MOS2f3s;
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double MOS2f4s;
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/* distortion stuff */
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/*
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* naming convention:
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* x = vgs
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* y = vbs
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* z = vds
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* cdr = cdrain
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*/
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#define MOS2NDCOEFFS 30
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#ifndef NODISTO
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double MOS2dCoeffs[MOS2NDCOEFFS];
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#else /* NODISTO */
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double *MOS2dCoeffs;
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#endif /* NODISTO */
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#ifndef CONFIG
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#define capbs2 MOS2dCoeffs[0]
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#define capbs3 MOS2dCoeffs[1]
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#define capbd2 MOS2dCoeffs[2]
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#define capbd3 MOS2dCoeffs[3]
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#define gbs2 MOS2dCoeffs[4]
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#define gbs3 MOS2dCoeffs[5]
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#define gbd2 MOS2dCoeffs[6]
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#define gbd3 MOS2dCoeffs[7]
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#define capgb2 MOS2dCoeffs[8]
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#define capgb3 MOS2dCoeffs[9]
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#define cdr_x2 MOS2dCoeffs[10]
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#define cdr_y2 MOS2dCoeffs[11]
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#define cdr_z2 MOS2dCoeffs[12]
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#define cdr_xy MOS2dCoeffs[13]
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#define cdr_yz MOS2dCoeffs[14]
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#define cdr_xz MOS2dCoeffs[15]
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#define cdr_x3 MOS2dCoeffs[16]
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#define cdr_y3 MOS2dCoeffs[17]
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#define cdr_z3 MOS2dCoeffs[18]
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#define cdr_x2z MOS2dCoeffs[19]
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#define cdr_x2y MOS2dCoeffs[20]
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#define cdr_y2z MOS2dCoeffs[21]
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#define cdr_xy2 MOS2dCoeffs[22]
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#define cdr_xz2 MOS2dCoeffs[23]
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#define cdr_yz2 MOS2dCoeffs[24]
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#define cdr_xyz MOS2dCoeffs[25]
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#define capgs2 MOS2dCoeffs[26]
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#define capgs3 MOS2dCoeffs[27]
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#define capgd2 MOS2dCoeffs[28]
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#define capgd3 MOS2dCoeffs[29]
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/* end distortion coeffs. */
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#endif
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#ifndef NONOISE
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double MOS2nVar[NSTATVARS][MOS2NSRCS];
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#else /* NONOISE */
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double **MOS2nVar;
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#endif /* NONOISE */
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} MOS2instance ;
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#define MOS2vbd MOS2states+ 0 /* bulk-drain voltage */
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#define MOS2vbs MOS2states+ 1 /* bulk-source voltage */
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#define MOS2vgs MOS2states+ 2 /* gate-source voltage */
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#define MOS2vds MOS2states+ 3 /* drain-source voltage */
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#define MOS2capgs MOS2states+4 /* gate-source capacitor value */
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#define MOS2qgs MOS2states+ 5 /* gate-source capacitor charge */
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#define MOS2cqgs MOS2states+ 6 /* gate-source capacitor current */
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#define MOS2capgd MOS2states+ 7 /* gate-drain capacitor value */
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#define MOS2qgd MOS2states+ 8 /* gate-drain capacitor charge */
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#define MOS2cqgd MOS2states+ 9 /* gate-drain capacitor current */
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#define MOS2capgb MOS2states+10 /* gate-bulk capacitor value */
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#define MOS2qgb MOS2states+ 11 /* gate-bulk capacitor charge */
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#define MOS2cqgb MOS2states+ 12 /* gate-bulk capacitor current */
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#define MOS2qbd MOS2states+ 13 /* bulk-drain capacitor charge */
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#define MOS2cqbd MOS2states+ 14 /* bulk-drain capacitor current */
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#define MOS2qbs MOS2states+ 15 /* bulk-source capacitor charge */
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#define MOS2cqbs MOS2states+ 16 /* bulk-source capacitor current */
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#define MOS2numStates 17
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#define MOS2sensxpgs MOS2states+17 /* charge sensitivities and their derivatives
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* +18 for the derivatives
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* pointer to the beginning of the array */
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#define MOS2sensxpgd MOS2states+19
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#define MOS2sensxpgb MOS2states+21
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#define MOS2sensxpbs MOS2states+23
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#define MOS2sensxpbd MOS2states+25
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#define MOS2numSenStates 10
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/* per model data */
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/* NOTE: parameters makred 'input - use xxxx' are parameters for
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* which a temperature correction is applied in MOS2temp, thus
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* the MOS3xxxx value in the per-instance structure should be used
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* instead in all calculations
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*/
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typedef struct sMOS2model { /* model structure for a resistor */
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struct GENmodel gen;
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#define MOS2modType gen.GENmodType
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#define MOS2nextModel(inst) ((struct sMOS2model *)((inst)->gen.GENnextModel))
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#define MOS2instances(inst) ((MOS2instance *)((inst)->gen.GENinstances))
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#define MOS2modName gen.GENmodName
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int MOS2type; /* device type : 1 = nmos, -1 = pmos */
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int MOS2gateType;
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double MOS2tnom; /* temperature at which parms were measured */
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double MOS2latDiff;
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double MOS2jctSatCurDensity; /* input - use tSatCurDens */
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double MOS2jctSatCur; /* input - use tSatCur */
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double MOS2drainResistance;
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double MOS2sourceResistance;
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double MOS2sheetResistance;
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double MOS2transconductance; /* input - use tTransconductance */
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double MOS2gateSourceOverlapCapFactor;
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double MOS2gateDrainOverlapCapFactor;
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double MOS2gateBulkOverlapCapFactor;
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double MOS2oxideCapFactor;
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double MOS2vt0; /* input - use tVto */
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double MOS2capBD; /* input - use tCbd */
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double MOS2capBS; /* input - use tCbs */
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double MOS2bulkCapFactor; /* input - use tCj */
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double MOS2sideWallCapFactor; /* input - use tCjsw */
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double MOS2bulkJctPotential; /* input - use tBulkPot */
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double MOS2bulkJctBotGradingCoeff;
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double MOS2bulkJctSideGradingCoeff;
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double MOS2fwdCapDepCoeff;
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double MOS2phi; /* input - use tPhi */
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double MOS2gamma;
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double MOS2lambda;
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double MOS2substrateDoping;
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double MOS2surfaceStateDensity;
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double MOS2fastSurfaceStateDensity; /* nfs */
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double MOS2oxideThickness;
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double MOS2surfaceMobility;
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double MOS2fNcoef;
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double MOS2fNexp;
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double MOS2narrowFactor; /* delta */
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double MOS2critFieldExp; /* uexp */
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double MOS2critField; /* ucrit */
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double MOS2maxDriftVel; /* vmax */
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double MOS2xd;
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double MOS2junctionDepth; /* xj */
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double MOS2channelCharge; /* neff */
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unsigned MOS2tnomGiven :1; /* user specified parm. meas. temp */
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unsigned MOS2typeGiven :1;
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unsigned MOS2latDiffGiven :1;
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unsigned MOS2jctSatCurDensityGiven :1;
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unsigned MOS2jctSatCurGiven :1;
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unsigned MOS2drainResistanceGiven :1;
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unsigned MOS2sourceResistanceGiven :1;
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unsigned MOS2sheetResistanceGiven :1;
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unsigned MOS2transconductanceGiven :1;
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unsigned MOS2gateSourceOverlapCapFactorGiven :1;
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unsigned MOS2gateDrainOverlapCapFactorGiven :1;
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unsigned MOS2gateBulkOverlapCapFactorGiven :1;
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unsigned MOS2vt0Given :1;
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unsigned MOS2capBDGiven :1;
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unsigned MOS2capBSGiven :1;
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unsigned MOS2bulkCapFactorGiven :1;
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unsigned MOS2sideWallCapFactorGiven :1;
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unsigned MOS2bulkJctPotentialGiven :1;
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unsigned MOS2bulkJctBotGradingCoeffGiven :1;
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unsigned MOS2bulkJctSideGradingCoeffGiven :1;
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unsigned MOS2fwdCapDepCoeffGiven :1;
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unsigned MOS2phiGiven :1;
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unsigned MOS2gammaGiven :1;
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unsigned MOS2lambdaGiven :1;
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unsigned MOS2substrateDopingGiven :1;
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unsigned MOS2gateTypeGiven :1;
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unsigned MOS2surfaceStateDensityGiven :1;
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unsigned MOS2fastSurfaceStateDensityGiven :1; /* nfs */
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unsigned MOS2oxideThicknessGiven :1;
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unsigned MOS2surfaceMobilityGiven :1;
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unsigned MOS2narrowFactorGiven :1; /* delta */
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unsigned MOS2critFieldExpGiven :1; /* uexp */
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unsigned MOS2critFieldGiven :1; /* ucrit */
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unsigned MOS2maxDriftVelGiven :1; /* vmax */
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unsigned MOS2junctionDepthGiven :1; /* xj */
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unsigned MOS2channelChargeGiven :1; /* neff */
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unsigned MOS2fNcoefGiven :1;
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unsigned MOS2fNexpGiven :1;
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} MOS2model;
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#ifndef NMOS
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#define NMOS 1
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#define PMOS -1
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#endif /*NMOS*/
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/* device parameters */
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enum {
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MOS2_W = 1,
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MOS2_L,
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MOS2_AS,
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MOS2_AD,
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MOS2_PS,
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MOS2_PD,
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MOS2_NRS,
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MOS2_NRD,
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MOS2_OFF,
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MOS2_IC,
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MOS2_IC_VBS,
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MOS2_IC_VDS,
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MOS2_IC_VGS,
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MOS2_W_SENS,
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MOS2_L_SENS,
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MOS2_CB,
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MOS2_CG,
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MOS2_CS,
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MOS2_POWER,
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MOS2_CGS,
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MOS2_CGD,
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MOS2_DNODE,
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MOS2_GNODE,
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MOS2_SNODE,
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MOS2_BNODE,
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MOS2_DNODEPRIME,
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MOS2_SNODEPRIME,
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MOS2_SOURCECONDUCT,
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MOS2_DRAINCONDUCT,
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MOS2_VON,
|
|
MOS2_VDSAT,
|
|
MOS2_SOURCEVCRIT,
|
|
MOS2_DRAINVCRIT,
|
|
MOS2_CD,
|
|
MOS2_CBS,
|
|
MOS2_CBD,
|
|
MOS2_GMBS,
|
|
MOS2_GM,
|
|
MOS2_GDS,
|
|
MOS2_GBD,
|
|
MOS2_GBS,
|
|
MOS2_CAPBD,
|
|
MOS2_CAPBS,
|
|
MOS2_CAPZEROBIASBD,
|
|
MOS2_CAPZEROBIASBDSW,
|
|
MOS2_CAPZEROBIASBS,
|
|
MOS2_CAPZEROBIASBSSW,
|
|
MOS2_VBD,
|
|
MOS2_VBS,
|
|
MOS2_VGS,
|
|
MOS2_VDS,
|
|
MOS2_CAPGS,
|
|
MOS2_QGS,
|
|
MOS2_CQGS,
|
|
MOS2_CAPGD,
|
|
MOS2_QGD,
|
|
MOS2_CQGD,
|
|
MOS2_CAPGB,
|
|
MOS2_QGB,
|
|
MOS2_CQGB,
|
|
MOS2_QBD,
|
|
MOS2_CQBD,
|
|
MOS2_QBS,
|
|
MOS2_CQBS,
|
|
MOS2_W_SENS_REAL,
|
|
MOS2_W_SENS_IMAG,
|
|
MOS2_W_SENS_MAG,
|
|
MOS2_W_SENS_PH,
|
|
MOS2_W_SENS_CPLX,
|
|
MOS2_L_SENS_REAL,
|
|
MOS2_L_SENS_IMAG,
|
|
MOS2_L_SENS_MAG,
|
|
MOS2_L_SENS_PH,
|
|
MOS2_L_SENS_CPLX,
|
|
MOS2_L_SENS_DC,
|
|
MOS2_W_SENS_DC,
|
|
MOS2_TEMP,
|
|
MOS2_SOURCERESIST,
|
|
MOS2_DRAINRESIST,
|
|
MOS2_M,
|
|
MOS2_DTEMP,
|
|
};
|
|
|
|
/* model paramerers */
|
|
enum {
|
|
MOS2_MOD_VTO = 101,
|
|
MOS2_MOD_KP,
|
|
MOS2_MOD_GAMMA,
|
|
MOS2_MOD_PHI,
|
|
MOS2_MOD_LAMBDA,
|
|
MOS2_MOD_RD,
|
|
MOS2_MOD_RS,
|
|
MOS2_MOD_CBD,
|
|
MOS2_MOD_CBS,
|
|
MOS2_MOD_IS,
|
|
MOS2_MOD_PB,
|
|
MOS2_MOD_CGSO,
|
|
MOS2_MOD_CGDO,
|
|
MOS2_MOD_CGBO,
|
|
MOS2_MOD_CJ,
|
|
MOS2_MOD_MJ,
|
|
MOS2_MOD_CJSW,
|
|
MOS2_MOD_MJSW,
|
|
MOS2_MOD_JS,
|
|
MOS2_MOD_TOX,
|
|
MOS2_MOD_LD,
|
|
MOS2_MOD_RSH,
|
|
MOS2_MOD_U0,
|
|
MOS2_MOD_FC,
|
|
MOS2_MOD_NSUB,
|
|
MOS2_MOD_TPG,
|
|
MOS2_MOD_NSS,
|
|
MOS2_MOD_NFS,
|
|
MOS2_MOD_DELTA,
|
|
MOS2_MOD_UEXP,
|
|
MOS2_MOD_VMAX,
|
|
MOS2_MOD_XJ,
|
|
MOS2_MOD_NEFF,
|
|
MOS2_MOD_UCRIT,
|
|
MOS2_MOD_NMOS,
|
|
MOS2_MOD_PMOS,
|
|
MOS2_MOD_TNOM,
|
|
};
|
|
|
|
enum {
|
|
MOS2_MOD_KF = 139,
|
|
MOS2_MOD_AF,
|
|
MOS2_MOD_TYPE,
|
|
};
|
|
|
|
/* model questions */
|
|
|
|
#include "mos2ext.h"
|
|
|
|
#endif /*MOS2*/
|
|
|