156 lines
3.6 KiB
Plaintext
156 lines
3.6 KiB
Plaintext
**********************************************************************
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* EKV v2.6 parameters for 0.5um CMOS C. EPFL-LEG, 1999
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* ----------------------------------
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*
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* ELDO (LEVEL = 44) / PSPICE (LEVEL = 5) example parameter set
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* for the EKV v2.6 model is provided for NMOS and PMOS.
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*
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*
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* IMPORTANT NOTES:
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* ----------------
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*
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* Parameters do not correspond to a particular technology but
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* have reasonable values for standard 0.5um CMOS.
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* Not intended for use in real design.
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*
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* Includes all intrinsic model parameters. An example set for
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* extrinsic model parameters is provided.
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*
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* Geometry range: W >= 0.8um, L >= 0.5um
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* Voltage range: |Vgb| < 3.3V, |Vdb| < 3.3V, |Vsb| < 2V
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*
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* For use with either simulator, comment/uncomment respective lines.
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* Use of extrinsic model parameters and models (series resistance,
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* junction currents/capacitances) is in general simulator-dependent.
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*
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**********************************************************************
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* EKV v2.6 NMOS
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*---------------
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.MODEL NCH NMOS
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+ LEVEL = 44
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*** Setup Parameters
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*+ UPDATE = 2.6
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*+ XQC = 0.4
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*** Process Related Model Parameters
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+ COX = 3.45E-3
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+ XJ = 0.15E-6
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*** Intrinsic Model Parameters
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+ VTO = 0.6
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+ GAMMA = 0.71
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+ PHI = 0.97
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+ KP = 150E-6
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+ E0 = 88.0E6
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+ UCRIT = 4.5E6
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+ DL = -0.05E-6
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+ DW = -0.02E-6
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+ LAMBDA = 0.23
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+ LETA = 0.28
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+ WETA = 0.05
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+ Q0 = 280E-6
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+ LK = 0.5E-6
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*** Substrate Current Parameters
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+ IBN = 1.0
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+ IBA = 200E6
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+ IBB = 350E6
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*** Intrinsic Model Temperature Parameters
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+ TNOM = 25.0
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+ TCV = 1.5E-3
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+ BEX = -1.5
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+ UCEX = 1.7
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+ IBBT = 0.0
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*** 1/f Noise Model Parameters
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+ KF = 1E-27
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+ AF = 1
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*** Short-Distance Matching Statistical Parameters (for MC simulation only)
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*+ AVTO = 0 DEV = 10.0E-3 ; ELDO v4.6
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*+ AGAMMA = 0 DEV = 10.0E-3 ; ELDO v4.6
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*+ AKP = 0 DEV = 25.0E-3 ; ELDO v4.6
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*** Series Resistance and Area Calulation Parameters
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*+ RLEV = 3
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+ HDIF = 0.9E-6
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+ RSH = 510
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*** Junction Current Parameters
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*+ ALEV = 3
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+ JS = 8.0E-6
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+ JSW = 1.5E-10
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+ XTI = 0
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+ N = 1.5
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*** Junction Capacitances Parameters
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+ CJ = 8.0E-4
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+ CJSW = 3.0E-10
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+ MJ = 0.5
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+ MJSW = 0.3
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+ PB = 0.9
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+ PBSW = 0.5
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+ FC = 0.5
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*** Gate Overlap Capacitances
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+ CGSO = 1.5E-10
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+ CGDO = 1.5E-10
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+ CGBO = 4.0E-10
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* EKV v2.6 PMOS
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*---------------
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.MODEL PCH PMOS
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+ LEVEL = 44
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*** Setup Parameters
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*+ UPDATE = 2.6
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*+ XQC = 0.4
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*** Process Related Model Parameters
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+ COX = 3.45E-3
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+ XJ = 0.15E-6
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*** Intrinsic Model Parameters
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+ VTO = -0.55
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+ GAMMA = 0.69
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+ PHI = 0.87
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+ KP = 35.0E-6
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+ E0 = 51.0E6
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+ UCRIT = 18.0E6
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+ DL = -0.05E-6
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+ DW = -0.03E-6
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+ LAMBDA = 1.1
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+ LETA = 0.45
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+ WETA = 0.0
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+ Q0 = 200E-6
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+ LK = 0.6E-6
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*** Substrate Current Parameters
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+ IBN = 1.0
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+ IBA = 10E6
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+ IBB = 300E6
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*** Intrinsic Model Temperature Parameters
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+ TNOM = 25.0
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+ TCV = -1.4E-3
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+ BEX = -1.4
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+ UCEX = 2.0
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+ IBBT = 0.0
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*** 1/f Noise Model Parameters
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+ KF = 1.0E-28
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+ AF = 1
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*** Short-Distance Matching Statistical Parameters (for MC simulation only)
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*+ AVTO = 0 DEV = 10.0E-3 ; ELDO v4.6
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*+ AGAMMA = 0 DEV = 10.0E-3 ; ELDO v4.6
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*+ AKP = 0 DEV = 25.0E-3 ; ELDO v4.6
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*** Series Resistance and Area Calulation Parameters
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*+ RLEV = 3
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+ HDIF = 0.9E-6
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+ RSH = 990
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*** Junction Current Parameters
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*+ ALEV = 3
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+ JS = 4.0E-5
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+ JSW = 7.0E-10
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+ XTI = 0
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+ N = 1.8
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*** Junction Capacitances Parameters
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+ CJ = 8.0E-4
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+ CJSW = 4.0E-10
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+ MJ = 0.5
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+ MJSW = 0.35
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+ PB = 0.9
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+ PBSW = 0.8
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+ FC = 0.5
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*** Gate Overlap Capacitances
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+ CGSO = 1.5E-10
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+ CGDO = 1.5E-10
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+ CGBO = 4.0E-10
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