932 lines
30 KiB
Plaintext
932 lines
30 KiB
Plaintext
**
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* BICMOS.LIB: Library of models used in the 1.0 um CBiCMOS process
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* Contains CIDER input descriptions as well as matching
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* SPICE models for some of the CIDER models.
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**
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**
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* One-dimensional models for a
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* polysilicon emitter complementary bipolar process.
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* The default device size is 1um by 1um (LxW)
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**
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.model M_NPN1D nbjt level=1
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+ title One-Dimensional Numerical Bipolar
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+ options base.depth=0.15 base.area=0.1 base.length=0.5 defa=1p
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+ x.mesh loc=-0.2 n=1
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+ x.mesh loc=0.0 n=51
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+ x.mesh wid=0.15 h.e=0.0001 h.m=.004 r=1.2
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+ x.mesh wid=1.15 h.s=0.0001 h.m=.004 r=1.2
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+ domain num=1 material=1 x.l=0.0
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+ domain num=2 material=2 x.h=0.0
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+ material num=1 silicon
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+ mobility mat=1 concmod=ct fieldmod=ct
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+ material num=2 polysilicon
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+ mobility mat=2 concmod=ct fieldmod=ct
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+ doping gauss n.type conc=3e20 x.l=-0.2 x.h=0.0 char.len=0.047
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+ doping gauss p.type conc=5e18 x.l=-0.2 x.h=0.0 char.len=0.100
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+ doping unif n.type conc=1e16 x.l=0.0 x.h=1.3
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+ doping gauss n.type conc=5e19 x.l=1.3 x.h=1.3 char.len=0.100
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+ models bgn srh auger conctau concmob fieldmob
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+ method devtol=1e-12 ac=direct itlim=15
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.model M_PNP1D nbjt level=1
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+ title One-Dimensional Numerical Bipolar
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+ options base.depth=0.2 base.area=0.1 base.length=0.5 defa=1p
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+ x.mesh loc=-0.2 n=1
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+ x.mesh loc=0.0 n=51
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+ x.mesh wid=0.20 h.e=0.0001 h.m=.004 r=1.2
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+ x.mesh wid=1.10 h.s=0.0001 h.m=.004 r=1.2
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+ domain num=1 material=1 x.l=0.0
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+ domain num=2 material=2 x.h=0.0
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+ material num=1 silicon
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+ mobility mat=1 concmod=ct fieldmod=ct
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+ material num=2 polysilicon
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+ mobility mat=2 concmod=ct fieldmod=ct
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+ doping gauss p.type conc=3e20 x.l=-0.2 x.h=0.0 char.len=0.047
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+ doping gauss n.type conc=5e17 x.l=-0.2 x.h=0.0 char.len=0.200
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+ doping unif p.type conc=1e16 x.l=0.0 x.h=1.3
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+ doping gauss p.type conc=5e19 x.l=1.3 x.h=1.3 char.len=0.100
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+ models bgn srh auger conctau concmob fieldmob
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+ method devtol=1e-12 ac=direct itlim=15
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**
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* Two-dimensional models for a
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* polysilicon emitter complementary bipolar process.
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* The default device size is 1um by 1um (LxW)
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**
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.MODEL M_NPNS nbjt level=2
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+ title TWO-DIMENSIONAL NUMERICAL POLYSILICON EMITTER BIPOLAR TRANSISTOR
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+ * Since half the device is simulated, double the unit width to get
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+ * 1.0 um emitter. Use a small mesh for this model.
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+ options defw=2.0u
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+ output stat
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+
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+ x.mesh w=2.0 h.e=0.02 h.m=0.5 r=2.0
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+ x.mesh w=0.5 h.s=0.02 h.m=0.2 r=2.0
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+
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+ y.mesh l=-0.2 n=1
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+ y.mesh l= 0.0 n=5
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+ y.mesh w=0.10 h.e=0.004 h.m=0.05 r=2.5
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+ y.mesh w=0.15 h.s=0.004 h.m=0.02 r=2.5
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+ y.mesh w=1.05 h.s=0.02 h.m=0.1 r=2.5
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+
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+ domain num=1 material=1 x.l=2.0 y.h=0.0
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+ domain num=2 material=2 x.h=2.0 y.h=0.0
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+ domain num=3 material=3 y.l=0.0
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+ material num=1 polysilicon
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+ material num=2 oxide
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+ material num=3 silicon
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+
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+ elec num=1 x.l=0.0 x.h=0.0 y.l=1.1 y.h=1.3
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+ elec num=2 x.l=0.0 x.h=0.5 y.l=0.0 y.h=0.0
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+ elec num=3 x.l=2.0 x.h=3.0 y.l=-0.2 y.h=-0.2
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+
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+ doping gauss n.type conc=3e20 x.l=2.0 x.h=3.0 y.l=-0.2 y.h=0.0
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+ + char.l=0.047 lat.rotate
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+ doping gauss p.type conc=5e18 x.l=0.0 x.h=5.0 y.l=-0.2 y.h=0.0
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+ + char.l=0.100 lat.rotate
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+ doping gauss p.type conc=1e20 x.l=0.0 x.h=0.5 y.l=-0.2 y.h=0.0
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+ + char.l=0.100 lat.rotate ratio=0.7
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+ doping unif n.type conc=1e16 x.l=0.0 x.h=5.0 y.l=0.0 y.h=1.3
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+ doping gauss n.type conc=5e19 x.l=0.0 x.h=5.0 y.l=1.3 y.h=1.3
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+ + char.l=0.100 lat.rotate
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+
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+ method ac=direct itlim=10
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+ models bgn srh auger conctau concmob fieldmob
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.MODEL M_NPN nbjt level=2
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+ title TWO-DIMENSIONAL NUMERICAL POLYSILICON EMITTER BIPOLAR TRANSISTOR
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+ * Since half the device is simulated, double the unit width to get
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+ * 1.0 um emitter length. Uses a finer mesh in the X direction.
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+ options defw=2.0u
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+ output stat
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+
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+ x.mesh w=0.5 h.e=0.075 h.m=0.2 r=2.0
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+ x.mesh w=0.75 h.s=0.075 h.m=0.2 r=2.0
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+ x.mesh w=0.75 h.e=0.05 h.m=0.2 r=1.5
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+ x.mesh w=0.5 h.s=0.05 h.m=0.1 r=1.5
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+
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+ y.mesh l=-0.2 n=1
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+ y.mesh l= 0.0 n=5
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+ y.mesh w=0.10 h.e=0.003 h.m=0.01 r=1.5
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+ y.mesh w=0.15 h.s=0.003 h.m=0.02 r=1.5
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+ y.mesh w=0.35 h.s=0.02 h.m=0.2 r=1.5
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+ y.mesh w=0.40 h.e=0.05 h.m=0.2 r=1.5
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+ y.mesh w=0.30 h.s=0.05 h.m=0.1 r=1.5
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+
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+ domain num=1 material=1 x.l=2.0 y.h=0.0
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+ domain num=2 material=2 x.h=2.0 y.h=0.0
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+ domain num=3 material=3 y.l=0.0
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+ material num=1 polysilicon
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+ material num=2 oxide
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+ material num=3 silicon
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+
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+ elec num=1 x.l=0.0 x.h=0.0 y.l=1.1 y.h=1.3
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+ elec num=2 x.l=0.0 x.h=0.5 y.l=0.0 y.h=0.0
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+ elec num=3 x.l=2.0 x.h=3.0 y.l=-0.2 y.h=-0.2
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+
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+ doping gauss n.type conc=3e20 x.l=2.0 x.h=3.0 y.l=-0.2 y.h=0.0
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+ + char.l=0.047 lat.rotate
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+ doping gauss p.type conc=5e18 x.l=0.0 x.h=5.0 y.l=-0.2 y.h=0.0
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+ + char.l=0.100 lat.rotate
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+ doping gauss p.type conc=1e20 x.l=0.0 x.h=0.5 y.l=-0.2 y.h=0.0
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+ + char.l=0.100 lat.rotate ratio=0.7
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+ doping unif n.type conc=1e16 x.l=0.0 x.h=5.0 y.l=0.0 y.h=1.3
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+ doping gauss n.type conc=5e19 x.l=0.0 x.h=5.0 y.l=1.3 y.h=1.3
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+ + char.l=0.100 lat.rotate
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+
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+ method ac=direct itlim=10
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+ models bgn srh auger conctau concmob fieldmob
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.MODEL M_PNPS nbjt level=2
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+ title TWO-DIMENSIONAL NUMERICAL POLYSILICON EMITTER BIPOLAR TRANSISTOR
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+ * Since half the device is simulated, double the unit width to get
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+ * 1.0 um emitter length. Use a small mesh for this model.
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+ options defw=2.0u
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+ output stat
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+
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+ x.mesh w=2.0 h.e=0.02 h.m=0.5 r=2.0
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+ x.mesh w=0.5 h.s=0.02 h.m=0.2 r=2.0
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+
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+ y.mesh l=-0.2 n=1
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+ y.mesh l= 0.0 n=5
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+ y.mesh w=0.12 h.e=0.004 h.m=0.05 r=2.5
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+ y.mesh w=0.28 h.s=0.004 h.m=0.02 r=2.5
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+ y.mesh w=1.05 h.s=0.02 h.m=0.1 r=2.5
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+
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+ domain num=1 material=1 x.l=2.0 y.h=0.0
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+ domain num=2 material=2 x.h=2.0 y.h=0.0
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+ domain num=3 material=3 y.l=0.0
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+ material num=1 polysilicon
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+ material num=2 oxide
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+ material num=3 silicon
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+
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+ elec num=1 x.l=0.0 x.h=0.0 y.l=1.1 y.h=1.3
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+ elec num=2 x.l=0.0 x.h=0.5 y.l=0.0 y.h=0.0
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+ elec num=3 x.l=2.0 x.h=3.0 y.l=-0.2 y.h=-0.2
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+
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+ doping gauss p.type conc=3e20 x.l=2.0 x.h=3.0 y.l=-0.2 y.h=0.0
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+ + char.l=0.047 lat.rotate
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+ doping gauss n.type conc=5e17 x.l=0.0 x.h=5.0 y.l=-0.2 y.h=0.0
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+ + char.l=0.200 lat.rotate
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+ doping gauss n.type conc=1e20 x.l=0.0 x.h=0.5 y.l=-0.2 y.h=0.0
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+ + char.l=0.100 lat.rotate ratio=0.7
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+ doping unif p.type conc=1e16 x.l=0.0 x.h=5.0 y.l=0.0 y.h=1.3
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+ doping gauss p.type conc=5e19 x.l=0.0 x.h=5.0 y.l=1.3 y.h=1.3
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+ + char.l=0.100 lat.rotate
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+
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+ method ac=direct itlim=10
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+ models bgn srh auger conctau concmob fieldmob
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.MODEL M_PNP nbjt level=2
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+ title TWO-DIMENSIONAL NUMERICAL POLYSILICON EMITTER BIPOLAR TRANSISTOR
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+ * Since half the device is simulated, double the unit width to get
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+ * 1.0 um emitter length. Uses a finer mesh in the X direction.
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+ options defw=2.0u
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+ output stat
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+
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+ x.mesh w=0.5 h.e=0.075 h.m=0.2 r=2.0
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+ x.mesh w=0.75 h.s=0.075 h.m=0.2 r=2.0
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+ x.mesh w=0.75 h.e=0.05 h.m=0.2 r=1.5
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+ x.mesh w=0.5 h.s=0.05 h.m=0.1 r=1.5
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+
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+ y.mesh l=-0.2 n=1
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+ y.mesh l= 0.0 n=5
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+ y.mesh w=0.12 h.e=0.003 h.m=0.01 r=1.5
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+ y.mesh w=0.28 h.s=0.003 h.m=0.02 r=1.5
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+ y.mesh w=0.20 h.s=0.02 h.m=0.2 r=1.5
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+ y.mesh w=0.40 h.e=0.05 h.m=0.2 r=1.5
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+ y.mesh w=0.30 h.s=0.05 h.m=0.1 r=1.5
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+
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+ domain num=1 material=1 x.l=2.0 y.h=0.0
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+ domain num=2 material=2 x.h=2.0 y.h=0.0
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+ domain num=3 material=3 y.l=0.0
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+ material num=1 polysilicon
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+ material num=2 oxide
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+ material num=3 silicon
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+
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+ elec num=1 x.l=0.0 x.h=0.0 y.l=1.1 y.h=1.3
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+ elec num=2 x.l=0.0 x.h=0.5 y.l=0.0 y.h=0.0
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+ elec num=3 x.l=2.0 x.h=3.0 y.l=-0.2 y.h=-0.2
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+
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+ doping gauss p.type conc=3e20 x.l=2.0 x.h=3.0 y.l=-0.2 y.h=0.0
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+ + char.l=0.047 lat.rotate
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+ doping gauss n.type conc=5e17 x.l=0.0 x.h=5.0 y.l=-0.2 y.h=0.0
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+ + char.l=0.200 lat.rotate
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+ doping gauss n.type conc=1e20 x.l=0.0 x.h=0.5 y.l=-0.2 y.h=0.0
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+ + char.l=0.100 lat.rotate ratio=0.7
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+ doping unif p.type conc=1e16 x.l=0.0 x.h=5.0 y.l=0.0 y.h=1.3
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+ doping gauss p.type conc=5e19 x.l=0.0 x.h=5.0 y.l=1.3 y.h=1.3
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+ + char.l=0.100 lat.rotate
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+
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+ method ac=direct itlim=10
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+ models bgn srh auger conctau concmob fieldmob
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**
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* Two-dimensional models for a
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* complementary MOS process.
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* Device models for 1um, 2um, 3um, 4um, 5um, 10um and 50um are provided.
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**
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.MODEL M_NMOS_1 numos
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+ output stat
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+
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+ x.mesh w=0.9 h.e=0.020 h.m=0.2 r=2.0
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+ x.mesh w=0.2 h.e=0.005 h.m=0.02 r=2.0
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+ x.mesh w=0.4 h.s=0.005 h.m=0.1 r=2.0
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+ x.mesh w=0.4 h.e=0.005 h.m=0.1 r=2.0
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+ x.mesh w=0.2 h.e=0.005 h.m=0.02 r=2.0
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+ x.mesh w=0.9 h.s=0.020 h.m=0.2 r=2.0
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+
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+ y.mesh l=-.0200 n=1
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+ y.mesh l=0.0 n=6
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+ y.mesh w=0.15 h.s=0.0001 h.max=.02 r=2.0
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+ y.mesh w=0.45 h.s=0.02 h.max=0.2 r=2.0
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+ y.mesh w=1.40 h.s=0.20 h.max=0.4 r=2.0
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+
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+ region num=1 material=1 y.h=0.0
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+ region num=2 material=2 y.l=0.0
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+ interface dom=2 nei=1 x.l=1 x.h=2 layer.width=0.0
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+ material num=1 oxide
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+ material num=2 silicon
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+
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+ elec num=1 x.l=2.5 x.h=3.1 y.l=0.0 y.h=0.0
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+ elec num=2 x.l=1 x.h=2 iy.l=1 iy.h=1
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+ elec num=3 x.l=-0.1 x.h=0.5 y.l=0.0 y.h=0.0
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+ elec num=4 x.l=-0.1 x.h=3.1 y.l=2.0 y.h=2.0
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+
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+ doping gauss p.type conc=1.0e17 x.l=-0.1 x.h=3.1 y.l=0.0
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+ + char.l=0.30
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+ doping unif p.type conc=5.0e15 x.l=-0.1 x.h=3.1 y.l=0.0 y.h=2.1
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+ doping gauss n.type conc=4e17 x.l=-0.1 x.h=1 y.l=0.0 y.h=0.0
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+ + char.l=0.16 lat.rotate ratio=0.65
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+ doping gauss n.type conc=1e20 x.l=-0.1 x.h=0.95 y.l=0.0 y.h=0.08
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+ + char.l=0.03 lat.rotate ratio=0.65
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+ doping gauss n.type conc=4e17 x.l=2 x.h=3.1 y.l=0.0 y.h=0.0
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+ + char.l=0.16 lat.rotate ratio=0.65
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+ doping gauss n.type conc=1e20 x.l=2.05 x.h=3.1 y.l=0.0 y.h=0.08
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+ + char.l=0.03 lat.rotate ratio=0.65
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+
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+ contact num=2 workf=4.10
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+ models concmob surfmob transmob fieldmob srh auger conctau bgn
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+ method ac=direct itlim=10 onec
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.MODEL M_NMOS_2 numos
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+ output stat
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+
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+ x.mesh w=0.9 h.e=0.020 h.m=0.2 r=2.0
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+ x.mesh w=0.2 h.e=0.005 h.m=0.02 r=2.0
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+ x.mesh w=0.9 h.s=0.005 h.m=0.2 r=2.0
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+ x.mesh w=0.9 h.e=0.005 h.m=0.2 r=2.0
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+ x.mesh w=0.2 h.e=0.005 h.m=0.02 r=2.0
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+ x.mesh w=0.9 h.s=0.020 h.m=0.2 r=2.0
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+
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+ y.mesh l=-.0200 n=1
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+ y.mesh l=0.0 n=6
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+ y.mesh w=0.15 h.s=0.0001 h.max=.02 r=2.0
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+ y.mesh w=0.45 h.s=0.02 h.max=0.2 r=2.0
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+ y.mesh w=1.40 h.s=0.20 h.max=0.4 r=2.0
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+
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+ region num=1 material=1 y.h=0.0
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+ region num=2 material=2 y.l=0.0
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+ interface dom=2 nei=1 x.l=1 x.h=3 layer.width=0.0
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+ material num=1 oxide
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+ material num=2 silicon
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+
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+ elec num=1 x.l=3.5 x.h=4.1 y.l=0.0 y.h=0.0
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+ elec num=2 x.l=1 x.h=3 iy.l=1 iy.h=1
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+ elec num=3 x.l=-0.1 x.h=0.5 y.l=0.0 y.h=0.0
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+ elec num=4 x.l=-0.1 x.h=4.1 y.l=2.0 y.h=2.0
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+
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+ doping gauss p.type conc=1.0e17 x.l=-0.1 x.h=4.1 y.l=0.0
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+ + char.l=0.30
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+ doping unif p.type conc=5.0e15 x.l=-0.1 x.h=4.1 y.l=0.0 y.h=2.1
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+ doping gauss n.type conc=4e17 x.l=-0.1 x.h=1 y.l=0.0 y.h=0.0
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+ + char.l=0.16 lat.rotate ratio=0.65
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+ doping gauss n.type conc=1e20 x.l=-0.1 x.h=0.95 y.l=0.0 y.h=0.08
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+ + char.l=0.03 lat.rotate ratio=0.65
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+ doping gauss n.type conc=4e17 x.l=3 x.h=4.1 y.l=0.0 y.h=0.0
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+ + char.l=0.16 lat.rotate ratio=0.65
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+ doping gauss n.type conc=1e20 x.l=3.05 x.h=4.1 y.l=0.0 y.h=0.08
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+ + char.l=0.03 lat.rotate ratio=0.65
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+
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+ contact num=2 workf=4.10
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+ models concmob surfmob transmob fieldmob srh auger conctau bgn
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+ method ac=direct itlim=10 onec
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|
|
.MODEL M_NMOS_3 numos
|
|
+ output stat
|
|
+
|
|
+ x.mesh w=0.9 h.e=0.020 h.m=0.2 r=2.0
|
|
+ x.mesh w=0.2 h.e=0.005 h.m=0.02 r=2.0
|
|
+ x.mesh w=1.4 h.s=0.005 h.m=0.3 r=2.0
|
|
+ x.mesh w=1.4 h.e=0.005 h.m=0.3 r=2.0
|
|
+ x.mesh w=0.2 h.e=0.005 h.m=0.02 r=2.0
|
|
+ x.mesh w=0.9 h.s=0.020 h.m=0.2 r=2.0
|
|
+
|
|
+ y.mesh l=-.0200 n=1
|
|
+ y.mesh l=0.0 n=6
|
|
+ y.mesh w=0.15 h.s=0.0001 h.max=.02 r=2.0
|
|
+ y.mesh w=0.45 h.s=0.02 h.max=0.2 r=2.0
|
|
+ y.mesh w=1.40 h.s=0.20 h.max=0.4 r=2.0
|
|
+
|
|
+ region num=1 material=1 y.h=0.0
|
|
+ region num=2 material=2 y.l=0.0
|
|
+ interface dom=2 nei=1 x.l=1 x.h=4 layer.width=0.0
|
|
+ material num=1 oxide
|
|
+ material num=2 silicon
|
|
+
|
|
+ elec num=1 x.l=4.5 x.h=5.1 y.l=0.0 y.h=0.0
|
|
+ elec num=2 x.l=1 x.h=4 iy.l=1 iy.h=1
|
|
+ elec num=3 x.l=-0.1 x.h=0.5 y.l=0.0 y.h=0.0
|
|
+ elec num=4 x.l=-0.1 x.h=5.1 y.l=2.0 y.h=2.0
|
|
+
|
|
+ doping gauss p.type conc=1.0e17 x.l=-0.1 x.h=5.1 y.l=0.0
|
|
+ + char.l=0.30
|
|
+ doping unif p.type conc=5.0e15 x.l=-0.1 x.h=5.1 y.l=0.0 y.h=2.1
|
|
+ doping gauss n.type conc=4e17 x.l=-0.1 x.h=1 y.l=0.0 y.h=0.0
|
|
+ + char.l=0.16 lat.rotate ratio=0.65
|
|
+ doping gauss n.type conc=1e20 x.l=-0.1 x.h=0.95 y.l=0.0 y.h=0.08
|
|
+ + char.l=0.03 lat.rotate ratio=0.65
|
|
+ doping gauss n.type conc=4e17 x.l=4 x.h=5.1 y.l=0.0 y.h=0.0
|
|
+ + char.l=0.16 lat.rotate ratio=0.65
|
|
+ doping gauss n.type conc=1e20 x.l=4.05 x.h=5.1 y.l=0.0 y.h=0.08
|
|
+ + char.l=0.03 lat.rotate ratio=0.65
|
|
+
|
|
+ contact num=2 workf=4.10
|
|
+ models concmob surfmob transmob fieldmob srh auger conctau bgn
|
|
+ method ac=direct itlim=10 onec
|
|
|
|
.MODEL M_NMOS_4 numos
|
|
+ output stat
|
|
+
|
|
+ x.mesh w=0.9 h.e=0.020 h.m=0.2 r=2.0
|
|
+ x.mesh w=0.2 h.e=0.005 h.m=0.02 r=2.0
|
|
+ x.mesh w=1.9 h.s=0.005 h.m=0.4 r=2.0
|
|
+ x.mesh w=1.9 h.e=0.005 h.m=0.4 r=2.0
|
|
+ x.mesh w=0.2 h.e=0.005 h.m=0.02 r=2.0
|
|
+ x.mesh w=0.9 h.s=0.020 h.m=0.2 r=2.0
|
|
+
|
|
+ y.mesh l=-.0200 n=1
|
|
+ y.mesh l=0.0 n=6
|
|
+ y.mesh w=0.15 h.s=0.0001 h.max=.02 r=2.0
|
|
+ y.mesh w=0.45 h.s=0.02 h.max=0.2 r=2.0
|
|
+ y.mesh w=1.40 h.s=0.20 h.max=0.4 r=2.0
|
|
+
|
|
+ region num=1 material=1 y.h=0.0
|
|
+ region num=2 material=2 y.l=0.0
|
|
+ interface dom=2 nei=1 x.l=1 x.h=5 layer.width=0.0
|
|
+ material num=1 oxide
|
|
+ material num=2 silicon
|
|
+
|
|
+ elec num=1 x.l=5.5 x.h=6.1 y.l=0.0 y.h=0.0
|
|
+ elec num=2 x.l=1 x.h=5 iy.l=1 iy.h=1
|
|
+ elec num=3 x.l=-0.1 x.h=0.5 y.l=0.0 y.h=0.0
|
|
+ elec num=4 x.l=-0.1 x.h=6.1 y.l=2.0 y.h=2.0
|
|
+
|
|
+ doping gauss p.type conc=1.0e17 x.l=-0.1 x.h=6.1 y.l=0.0
|
|
+ + char.l=0.30
|
|
+ doping unif p.type conc=5.0e15 x.l=-0.1 x.h=6.1 y.l=0.0 y.h=2.1
|
|
+ doping gauss n.type conc=4e17 x.l=-0.1 x.h=1 y.l=0.0 y.h=0.0
|
|
+ + char.l=0.16 lat.rotate ratio=0.65
|
|
+ doping gauss n.type conc=1e20 x.l=-0.1 x.h=0.95 y.l=0.0 y.h=0.08
|
|
+ + char.l=0.03 lat.rotate ratio=0.65
|
|
+ doping gauss n.type conc=4e17 x.l=5 x.h=6.1 y.l=0.0 y.h=0.0
|
|
+ + char.l=0.16 lat.rotate ratio=0.65
|
|
+ doping gauss n.type conc=1e20 x.l=5.05 x.h=6.1 y.l=0.0 y.h=0.08
|
|
+ + char.l=0.03 lat.rotate ratio=0.65
|
|
+
|
|
+ contact num=2 workf=4.10
|
|
+ models concmob surfmob transmob fieldmob srh auger conctau bgn
|
|
+ method ac=direct itlim=10 onec
|
|
|
|
.MODEL M_NMOS_5 numos
|
|
+ output stat
|
|
+
|
|
+ x.mesh w=0.9 h.e=0.020 h.m=0.2 r=2.0
|
|
+ x.mesh w=0.2 h.e=0.005 h.m=0.02 r=2.0
|
|
+ x.mesh w=2.4 h.s=0.005 h.m=0.5 r=2.0
|
|
+ x.mesh w=2.4 h.e=0.005 h.m=0.5 r=2.0
|
|
+ x.mesh w=0.2 h.e=0.005 h.m=0.02 r=2.0
|
|
+ x.mesh w=0.9 h.s=0.020 h.m=0.2 r=2.0
|
|
+
|
|
+ y.mesh l=-.0200 n=1
|
|
+ y.mesh l=0.0 n=6
|
|
+ y.mesh w=0.15 h.s=0.0001 h.max=.02 r=2.0
|
|
+ y.mesh w=0.45 h.s=0.02 h.max=0.2 r=2.0
|
|
+ y.mesh w=1.40 h.s=0.20 h.max=0.4 r=2.0
|
|
+
|
|
+ region num=1 material=1 y.h=0.0
|
|
+ region num=2 material=2 y.l=0.0
|
|
+ interface dom=2 nei=1 x.l=1 x.h=6 layer.width=0.0
|
|
+ material num=1 oxide
|
|
+ material num=2 silicon
|
|
+
|
|
+ elec num=1 x.l=6.5 x.h=7.1 y.l=0.0 y.h=0.0
|
|
+ elec num=2 x.l=1 x.h=6 iy.l=1 iy.h=1
|
|
+ elec num=3 x.l=-0.1 x.h=0.5 y.l=0.0 y.h=0.0
|
|
+ elec num=4 x.l=-0.1 x.h=7.1 y.l=2.0 y.h=2.0
|
|
+
|
|
+ doping gauss p.type conc=1.0e17 x.l=-0.1 x.h=7.1 y.l=0.0
|
|
+ + char.l=0.30
|
|
+ doping unif p.type conc=5.0e15 x.l=-0.1 x.h=7.1 y.l=0.0 y.h=2.1
|
|
+ doping gauss n.type conc=4e17 x.l=-0.1 x.h=1 y.l=0.0 y.h=0.0
|
|
+ + char.l=0.16 lat.rotate ratio=0.65
|
|
+ doping gauss n.type conc=1e20 x.l=-0.1 x.h=0.95 y.l=0.0 y.h=0.08
|
|
+ + char.l=0.03 lat.rotate ratio=0.65
|
|
+ doping gauss n.type conc=4e17 x.l=6 x.h=7.1 y.l=0.0 y.h=0.0
|
|
+ + char.l=0.16 lat.rotate ratio=0.65
|
|
+ doping gauss n.type conc=1e20 x.l=6.05 x.h=7.1 y.l=0.0 y.h=0.08
|
|
+ + char.l=0.03 lat.rotate ratio=0.65
|
|
+
|
|
+ contact num=2 workf=4.10
|
|
+ models concmob surfmob transmob fieldmob srh auger conctau bgn
|
|
+ method ac=direct itlim=10 onec
|
|
|
|
.MODEL M_NMOS_10 numos
|
|
+ output stat
|
|
+
|
|
+ x.mesh w=0.9 h.e=0.020 h.m=0.2 r=2.0
|
|
+ x.mesh w=0.2 h.e=0.005 h.m=0.02 r=2.0
|
|
+ x.mesh w=4.9 h.s=0.005 h.m=1 r=2.0
|
|
+ x.mesh w=4.9 h.e=0.005 h.m=1 r=2.0
|
|
+ x.mesh w=0.2 h.e=0.005 h.m=0.02 r=2.0
|
|
+ x.mesh w=0.9 h.s=0.020 h.m=0.2 r=2.0
|
|
+
|
|
+ y.mesh l=-.0200 n=1
|
|
+ y.mesh l=0.0 n=6
|
|
+ y.mesh w=0.15 h.s=0.0001 h.max=.02 r=2.0
|
|
+ y.mesh w=0.45 h.s=0.02 h.max=0.2 r=2.0
|
|
+ y.mesh w=1.40 h.s=0.20 h.max=0.4 r=2.0
|
|
+
|
|
+ region num=1 material=1 y.h=0.0
|
|
+ region num=2 material=2 y.l=0.0
|
|
+ interface dom=2 nei=1 x.l=1 x.h=11 layer.width=0.0
|
|
+ material num=1 oxide
|
|
+ material num=2 silicon
|
|
+
|
|
+ elec num=1 x.l=11.5 x.h=12.1 y.l=0.0 y.h=0.0
|
|
+ elec num=2 x.l=1 x.h=11 iy.l=1 iy.h=1
|
|
+ elec num=3 x.l=-0.1 x.h=0.5 y.l=0.0 y.h=0.0
|
|
+ elec num=4 x.l=-0.1 x.h=12.1 y.l=2.0 y.h=2.0
|
|
+
|
|
+ doping gauss p.type conc=1.0e17 x.l=-0.1 x.h=12.1 y.l=0.0
|
|
+ + char.l=0.30
|
|
+ doping unif p.type conc=5.0e15 x.l=-0.1 x.h=12.1 y.l=0.0 y.h=2.1
|
|
+ doping gauss n.type conc=4e17 x.l=-0.1 x.h=1 y.l=0.0 y.h=0.0
|
|
+ + char.l=0.16 lat.rotate ratio=0.65
|
|
+ doping gauss n.type conc=1e20 x.l=-0.1 x.h=0.95 y.l=0.0 y.h=0.08
|
|
+ + char.l=0.03 lat.rotate ratio=0.65
|
|
+ doping gauss n.type conc=4e17 x.l=11 x.h=12.1 y.l=0.0 y.h=0.0
|
|
+ + char.l=0.16 lat.rotate ratio=0.65
|
|
+ doping gauss n.type conc=1e20 x.l=11.05 x.h=12.1 y.l=0.0 y.h=0.08
|
|
+ + char.l=0.03 lat.rotate ratio=0.65
|
|
+
|
|
+ contact num=2 workf=4.10
|
|
+ models concmob surfmob transmob fieldmob srh auger conctau bgn
|
|
+ method ac=direct itlim=10 onec
|
|
|
|
.MODEL M_NMOS_50 numos
|
|
+ output stat
|
|
+
|
|
+ x.mesh w=0.9 h.e=0.020 h.m=0.2 r=2.0
|
|
+ x.mesh w=0.2 h.e=0.005 h.m=0.02 r=2.0
|
|
+ x.mesh w=24.9 h.s=0.005 h.m=5 r=2.0
|
|
+ x.mesh w=24.9 h.e=0.005 h.m=5 r=2.0
|
|
+ x.mesh w=0.2 h.e=0.005 h.m=0.02 r=2.0
|
|
+ x.mesh w=0.9 h.s=0.020 h.m=0.2 r=2.0
|
|
+
|
|
+ y.mesh l=-.0200 n=1
|
|
+ y.mesh l=0.0 n=6
|
|
+ y.mesh w=0.15 h.s=0.0001 h.max=.02 r=2.0
|
|
+ y.mesh w=0.45 h.s=0.02 h.max=0.2 r=2.0
|
|
+ y.mesh w=1.40 h.s=0.20 h.max=0.4 r=2.0
|
|
+
|
|
+ region num=1 material=1 y.h=0.0
|
|
+ region num=2 material=2 y.l=0.0
|
|
+ interface dom=2 nei=1 x.l=1 x.h=51 layer.width=0.0
|
|
+ material num=1 oxide
|
|
+ material num=2 silicon
|
|
+
|
|
+ elec num=1 x.l=51.5 x.h=52.1 y.l=0.0 y.h=0.0
|
|
+ elec num=2 x.l=1 x.h=51 iy.l=1 iy.h=1
|
|
+ elec num=3 x.l=-0.1 x.h=0.5 y.l=0.0 y.h=0.0
|
|
+ elec num=4 x.l=-0.1 x.h=52.1 y.l=2.0 y.h=2.0
|
|
+
|
|
+ doping gauss p.type conc=1.0e17 x.l=-0.1 x.h=52.1 y.l=0.0
|
|
+ + char.l=0.30
|
|
+ doping unif p.type conc=5.0e15 x.l=-0.1 x.h=52.1 y.l=0.0 y.h=2.1
|
|
+ doping gauss n.type conc=4e17 x.l=-0.1 x.h=1 y.l=0.0 y.h=0.0
|
|
+ + char.l=0.16 lat.rotate ratio=0.65
|
|
+ doping gauss n.type conc=1e20 x.l=-0.1 x.h=0.95 y.l=0.0 y.h=0.08
|
|
+ + char.l=0.03 lat.rotate ratio=0.65
|
|
+ doping gauss n.type conc=4e17 x.l=51 x.h=52.1 y.l=0.0 y.h=0.0
|
|
+ + char.l=0.16 lat.rotate ratio=0.65
|
|
+ doping gauss n.type conc=1e20 x.l=51.05 x.h=52.1 y.l=0.0 y.h=0.08
|
|
+ + char.l=0.03 lat.rotate ratio=0.65
|
|
+
|
|
+ contact num=2 workf=4.10
|
|
+ models concmob surfmob transmob fieldmob srh auger conctau bgn
|
|
+ method ac=direct itlim=10 onec
|
|
|
|
.MODEL M_PMOS_1 numos
|
|
+ output stat
|
|
+
|
|
+ x.mesh w=0.9 h.e=0.020 h.m=0.2 r=2.0
|
|
+ x.mesh w=0.2 h.e=0.005 h.m=0.02 r=2.0
|
|
+ x.mesh w=0.4 h.s=0.005 h.m=0.1 r=2.0
|
|
+ x.mesh w=0.4 h.e=0.005 h.m=0.1 r=2.0
|
|
+ x.mesh w=0.2 h.e=0.005 h.m=0.02 r=2.0
|
|
+ x.mesh w=0.9 h.s=0.020 h.m=0.2 r=2.0
|
|
+
|
|
+ y.mesh l=-.0200 n=1
|
|
+ y.mesh l=0.0 n=6
|
|
+ y.mesh w=0.15 h.s=0.0001 h.max=.02 r=2.0
|
|
+ y.mesh w=0.45 h.s=0.02 h.max=0.2 r=2.0
|
|
+ y.mesh w=1.40 h.s=0.20 h.max=0.4 r=2.0
|
|
+
|
|
+ region num=1 material=1 y.h=0.0
|
|
+ region num=2 material=2 y.l=0.0
|
|
+ interface dom=2 nei=1 x.l=1 x.h=2 layer.width=0.0
|
|
+ material num=1 oxide
|
|
+ material num=2 silicon
|
|
+
|
|
+ elec num=1 x.l=2.5 x.h=3.1 y.l=0.0 y.h=0.0
|
|
+ elec num=2 x.l=1 x.h=2 iy.l=1 iy.h=1
|
|
+ elec num=3 x.l=-0.1 x.h=0.5 y.l=0.0 y.h=0.0
|
|
+ elec num=4 x.l=-0.1 x.h=3.1 y.l=2.0 y.h=2.0
|
|
+
|
|
+ doping gauss n.type conc=1.0e17 x.l=-0.1 x.h=3.1 y.l=0.0
|
|
+ + char.l=0.30
|
|
+ doping unif n.type conc=5.0e15 x.l=-0.1 x.h=3.1 y.l=0.0 y.h=2.1
|
|
+ doping gauss p.type conc=4e17 x.l=-0.1 x.h=1 y.l=0.0 y.h=0.0
|
|
+ + char.l=0.16 lat.rotate ratio=0.65
|
|
+ doping gauss p.type conc=1e20 x.l=-0.1 x.h=0.95 y.l=0.0 y.h=0.08
|
|
+ + char.l=0.03 lat.rotate ratio=0.65
|
|
+ doping gauss p.type conc=4e17 x.l=2 x.h=3.1 y.l=0.0 y.h=0.0
|
|
+ + char.l=0.16 lat.rotate ratio=0.65
|
|
+ doping gauss p.type conc=1e20 x.l=2.05 x.h=3.1 y.l=0.0 y.h=0.08
|
|
+ + char.l=0.03 lat.rotate ratio=0.65
|
|
+
|
|
+ contact num=2 workf=5.29
|
|
+ models concmob surfmob transmob fieldmob srh auger conctau bgn
|
|
+ method ac=direct itlim=10 onec
|
|
|
|
.MODEL M_PMOS_2 numos
|
|
+ output stat
|
|
+
|
|
+ x.mesh w=0.9 h.e=0.020 h.m=0.2 r=2.0
|
|
+ x.mesh w=0.2 h.e=0.005 h.m=0.02 r=2.0
|
|
+ x.mesh w=0.9 h.s=0.005 h.m=0.2 r=2.0
|
|
+ x.mesh w=0.9 h.e=0.005 h.m=0.2 r=2.0
|
|
+ x.mesh w=0.2 h.e=0.005 h.m=0.02 r=2.0
|
|
+ x.mesh w=0.9 h.s=0.020 h.m=0.2 r=2.0
|
|
+
|
|
+ y.mesh l=-.0200 n=1
|
|
+ y.mesh l=0.0 n=6
|
|
+ y.mesh w=0.15 h.s=0.0001 h.max=.02 r=2.0
|
|
+ y.mesh w=0.45 h.s=0.02 h.max=0.2 r=2.0
|
|
+ y.mesh w=1.40 h.s=0.20 h.max=0.4 r=2.0
|
|
+
|
|
+ region num=1 material=1 y.h=0.0
|
|
+ region num=2 material=2 y.l=0.0
|
|
+ interface dom=2 nei=1 x.l=1 x.h=3 layer.width=0.0
|
|
+ material num=1 oxide
|
|
+ material num=2 silicon
|
|
+
|
|
+ elec num=1 x.l=3.5 x.h=4.1 y.l=0.0 y.h=0.0
|
|
+ elec num=2 x.l=1 x.h=3 iy.l=1 iy.h=1
|
|
+ elec num=3 x.l=-0.1 x.h=0.5 y.l=0.0 y.h=0.0
|
|
+ elec num=4 x.l=-0.1 x.h=4.1 y.l=2.0 y.h=2.0
|
|
+
|
|
+ doping gauss n.type conc=1.0e17 x.l=-0.1 x.h=4.1 y.l=0.0
|
|
+ + char.l=0.30
|
|
+ doping unif n.type conc=5.0e15 x.l=-0.1 x.h=4.1 y.l=0.0 y.h=2.1
|
|
+ doping gauss p.type conc=4e17 x.l=-0.1 x.h=1 y.l=0.0 y.h=0.0
|
|
+ + char.l=0.16 lat.rotate ratio=0.65
|
|
+ doping gauss p.type conc=1e20 x.l=-0.1 x.h=0.95 y.l=0.0 y.h=0.08
|
|
+ + char.l=0.03 lat.rotate ratio=0.65
|
|
+ doping gauss p.type conc=4e17 x.l=3 x.h=4.1 y.l=0.0 y.h=0.0
|
|
+ + char.l=0.16 lat.rotate ratio=0.65
|
|
+ doping gauss p.type conc=1e20 x.l=3.05 x.h=4.1 y.l=0.0 y.h=0.08
|
|
+ + char.l=0.03 lat.rotate ratio=0.65
|
|
+
|
|
+ contact num=2 workf=5.29
|
|
+ models concmob surfmob transmob fieldmob srh auger conctau bgn
|
|
+ method ac=direct itlim=10 onec
|
|
|
|
.MODEL M_PMOS_3 numos
|
|
+ output stat
|
|
+
|
|
+ x.mesh w=0.9 h.e=0.020 h.m=0.2 r=2.0
|
|
+ x.mesh w=0.2 h.e=0.005 h.m=0.02 r=2.0
|
|
+ x.mesh w=1.4 h.s=0.005 h.m=0.3 r=2.0
|
|
+ x.mesh w=1.4 h.e=0.005 h.m=0.3 r=2.0
|
|
+ x.mesh w=0.2 h.e=0.005 h.m=0.02 r=2.0
|
|
+ x.mesh w=0.9 h.s=0.020 h.m=0.2 r=2.0
|
|
+
|
|
+ y.mesh l=-.0200 n=1
|
|
+ y.mesh l=0.0 n=6
|
|
+ y.mesh w=0.15 h.s=0.0001 h.max=.02 r=2.0
|
|
+ y.mesh w=0.45 h.s=0.02 h.max=0.2 r=2.0
|
|
+ y.mesh w=1.40 h.s=0.20 h.max=0.4 r=2.0
|
|
+
|
|
+ region num=1 material=1 y.h=0.0
|
|
+ region num=2 material=2 y.l=0.0
|
|
+ interface dom=2 nei=1 x.l=1 x.h=4 layer.width=0.0
|
|
+ material num=1 oxide
|
|
+ material num=2 silicon
|
|
+
|
|
+ elec num=1 x.l=4.5 x.h=5.1 y.l=0.0 y.h=0.0
|
|
+ elec num=2 x.l=1 x.h=4 iy.l=1 iy.h=1
|
|
+ elec num=3 x.l=-0.1 x.h=0.5 y.l=0.0 y.h=0.0
|
|
+ elec num=4 x.l=-0.1 x.h=5.1 y.l=2.0 y.h=2.0
|
|
+
|
|
+ doping gauss n.type conc=1.0e17 x.l=-0.1 x.h=5.1 y.l=0.0
|
|
+ + char.l=0.30
|
|
+ doping unif n.type conc=5.0e15 x.l=-0.1 x.h=5.1 y.l=0.0 y.h=2.1
|
|
+ doping gauss p.type conc=4e17 x.l=-0.1 x.h=1 y.l=0.0 y.h=0.0
|
|
+ + char.l=0.16 lat.rotate ratio=0.65
|
|
+ doping gauss p.type conc=1e20 x.l=-0.1 x.h=0.95 y.l=0.0 y.h=0.08
|
|
+ + char.l=0.03 lat.rotate ratio=0.65
|
|
+ doping gauss p.type conc=4e17 x.l=4 x.h=5.1 y.l=0.0 y.h=0.0
|
|
+ + char.l=0.16 lat.rotate ratio=0.65
|
|
+ doping gauss p.type conc=1e20 x.l=4.05 x.h=5.1 y.l=0.0 y.h=0.08
|
|
+ + char.l=0.03 lat.rotate ratio=0.65
|
|
+
|
|
+ contact num=2 workf=5.29
|
|
+ models concmob surfmob transmob fieldmob srh auger conctau bgn
|
|
+ method ac=direct itlim=10 onec
|
|
|
|
.MODEL M_PMOS_4 numos
|
|
+ output stat
|
|
+
|
|
+ x.mesh w=0.9 h.e=0.020 h.m=0.2 r=2.0
|
|
+ x.mesh w=0.2 h.e=0.005 h.m=0.02 r=2.0
|
|
+ x.mesh w=1.9 h.s=0.005 h.m=0.4 r=2.0
|
|
+ x.mesh w=1.9 h.e=0.005 h.m=0.4 r=2.0
|
|
+ x.mesh w=0.2 h.e=0.005 h.m=0.02 r=2.0
|
|
+ x.mesh w=0.9 h.s=0.020 h.m=0.2 r=2.0
|
|
+
|
|
+ y.mesh l=-.0200 n=1
|
|
+ y.mesh l=0.0 n=6
|
|
+ y.mesh w=0.15 h.s=0.0001 h.max=.02 r=2.0
|
|
+ y.mesh w=0.45 h.s=0.02 h.max=0.2 r=2.0
|
|
+ y.mesh w=1.40 h.s=0.20 h.max=0.4 r=2.0
|
|
+
|
|
+ region num=1 material=1 y.h=0.0
|
|
+ region num=2 material=2 y.l=0.0
|
|
+ interface dom=2 nei=1 x.l=1 x.h=5 layer.width=0.0
|
|
+ material num=1 oxide
|
|
+ material num=2 silicon
|
|
+
|
|
+ elec num=1 x.l=5.5 x.h=6.1 y.l=0.0 y.h=0.0
|
|
+ elec num=2 x.l=1 x.h=5 iy.l=1 iy.h=1
|
|
+ elec num=3 x.l=-0.1 x.h=0.5 y.l=0.0 y.h=0.0
|
|
+ elec num=4 x.l=-0.1 x.h=6.1 y.l=2.0 y.h=2.0
|
|
+
|
|
+ doping gauss n.type conc=1.0e17 x.l=-0.1 x.h=6.1 y.l=0.0
|
|
+ + char.l=0.30
|
|
+ doping unif n.type conc=5.0e15 x.l=-0.1 x.h=6.1 y.l=0.0 y.h=2.1
|
|
+ doping gauss p.type conc=4e17 x.l=-0.1 x.h=1 y.l=0.0 y.h=0.0
|
|
+ + char.l=0.16 lat.rotate ratio=0.65
|
|
+ doping gauss p.type conc=1e20 x.l=-0.1 x.h=0.95 y.l=0.0 y.h=0.08
|
|
+ + char.l=0.03 lat.rotate ratio=0.65
|
|
+ doping gauss p.type conc=4e17 x.l=5 x.h=6.1 y.l=0.0 y.h=0.0
|
|
+ + char.l=0.16 lat.rotate ratio=0.65
|
|
+ doping gauss p.type conc=1e20 x.l=5.05 x.h=6.1 y.l=0.0 y.h=0.08
|
|
+ + char.l=0.03 lat.rotate ratio=0.65
|
|
+
|
|
+ contact num=2 workf=5.29
|
|
+ models concmob surfmob transmob fieldmob srh auger conctau bgn
|
|
+ method ac=direct itlim=10 onec
|
|
|
|
.MODEL M_PMOS_5 numos
|
|
+ output stat
|
|
+
|
|
+ x.mesh w=0.9 h.e=0.020 h.m=0.2 r=2.0
|
|
+ x.mesh w=0.2 h.e=0.005 h.m=0.02 r=2.0
|
|
+ x.mesh w=2.4 h.s=0.005 h.m=0.5 r=2.0
|
|
+ x.mesh w=2.4 h.e=0.005 h.m=0.5 r=2.0
|
|
+ x.mesh w=0.2 h.e=0.005 h.m=0.02 r=2.0
|
|
+ x.mesh w=0.9 h.s=0.020 h.m=0.2 r=2.0
|
|
+
|
|
+ y.mesh l=-.0200 n=1
|
|
+ y.mesh l=0.0 n=6
|
|
+ y.mesh w=0.15 h.s=0.0001 h.max=.02 r=2.0
|
|
+ y.mesh w=0.45 h.s=0.02 h.max=0.2 r=2.0
|
|
+ y.mesh w=1.40 h.s=0.20 h.max=0.4 r=2.0
|
|
+
|
|
+ region num=1 material=1 y.h=0.0
|
|
+ region num=2 material=2 y.l=0.0
|
|
+ interface dom=2 nei=1 x.l=1 x.h=6 layer.width=0.0
|
|
+ material num=1 oxide
|
|
+ material num=2 silicon
|
|
+
|
|
+ elec num=1 x.l=6.5 x.h=7.1 y.l=0.0 y.h=0.0
|
|
+ elec num=2 x.l=1 x.h=6 iy.l=1 iy.h=1
|
|
+ elec num=3 x.l=-0.1 x.h=0.5 y.l=0.0 y.h=0.0
|
|
+ elec num=4 x.l=-0.1 x.h=7.1 y.l=2.0 y.h=2.0
|
|
+
|
|
+ doping gauss n.type conc=1.0e17 x.l=-0.1 x.h=7.1 y.l=0.0
|
|
+ + char.l=0.30
|
|
+ doping unif n.type conc=5.0e15 x.l=-0.1 x.h=7.1 y.l=0.0 y.h=2.1
|
|
+ doping gauss p.type conc=4e17 x.l=-0.1 x.h=1 y.l=0.0 y.h=0.0
|
|
+ + char.l=0.16 lat.rotate ratio=0.65
|
|
+ doping gauss p.type conc=1e20 x.l=-0.1 x.h=0.95 y.l=0.0 y.h=0.08
|
|
+ + char.l=0.03 lat.rotate ratio=0.65
|
|
+ doping gauss p.type conc=4e17 x.l=6 x.h=7.1 y.l=0.0 y.h=0.0
|
|
+ + char.l=0.16 lat.rotate ratio=0.65
|
|
+ doping gauss p.type conc=1e20 x.l=6.05 x.h=7.1 y.l=0.0 y.h=0.08
|
|
+ + char.l=0.03 lat.rotate ratio=0.65
|
|
+
|
|
+ contact num=2 workf=5.29
|
|
+ models concmob surfmob transmob fieldmob srh auger conctau bgn
|
|
+ method ac=direct itlim=10 onec
|
|
|
|
.MODEL M_PMOS_10 numos
|
|
+ output stat
|
|
+
|
|
+ x.mesh w=0.9 h.e=0.020 h.m=0.2 r=2.0
|
|
+ x.mesh w=0.2 h.e=0.005 h.m=0.02 r=2.0
|
|
+ x.mesh w=4.9 h.s=0.005 h.m=1 r=2.0
|
|
+ x.mesh w=4.9 h.e=0.005 h.m=1 r=2.0
|
|
+ x.mesh w=0.2 h.e=0.005 h.m=0.02 r=2.0
|
|
+ x.mesh w=0.9 h.s=0.020 h.m=0.2 r=2.0
|
|
+
|
|
+ y.mesh l=-.0200 n=1
|
|
+ y.mesh l=0.0 n=6
|
|
+ y.mesh w=0.15 h.s=0.0001 h.max=.02 r=2.0
|
|
+ y.mesh w=0.45 h.s=0.02 h.max=0.2 r=2.0
|
|
+ y.mesh w=1.40 h.s=0.20 h.max=0.4 r=2.0
|
|
+
|
|
+ region num=1 material=1 y.h=0.0
|
|
+ region num=2 material=2 y.l=0.0
|
|
+ interface dom=2 nei=1 x.l=1 x.h=11 layer.width=0.0
|
|
+ material num=1 oxide
|
|
+ material num=2 silicon
|
|
+
|
|
+ elec num=1 x.l=11.5 x.h=12.1 y.l=0.0 y.h=0.0
|
|
+ elec num=2 x.l=1 x.h=11 iy.l=1 iy.h=1
|
|
+ elec num=3 x.l=-0.1 x.h=0.5 y.l=0.0 y.h=0.0
|
|
+ elec num=4 x.l=-0.1 x.h=12.1 y.l=2.0 y.h=2.0
|
|
+
|
|
+ doping gauss n.type conc=1.0e17 x.l=-0.1 x.h=12.1 y.l=0.0
|
|
+ + char.l=0.30
|
|
+ doping unif n.type conc=5.0e15 x.l=-0.1 x.h=12.1 y.l=0.0 y.h=2.1
|
|
+ doping gauss p.type conc=4e17 x.l=-0.1 x.h=1 y.l=0.0 y.h=0.0
|
|
+ + char.l=0.16 lat.rotate ratio=0.65
|
|
+ doping gauss p.type conc=1e20 x.l=-0.1 x.h=0.95 y.l=0.0 y.h=0.08
|
|
+ + char.l=0.03 lat.rotate ratio=0.65
|
|
+ doping gauss p.type conc=4e17 x.l=11 x.h=12.1 y.l=0.0 y.h=0.0
|
|
+ + char.l=0.16 lat.rotate ratio=0.65
|
|
+ doping gauss p.type conc=1e20 x.l=11.05 x.h=12.1 y.l=0.0 y.h=0.08
|
|
+ + char.l=0.03 lat.rotate ratio=0.65
|
|
+
|
|
+ contact num=2 workf=5.29
|
|
+ models concmob surfmob transmob fieldmob srh auger conctau bgn
|
|
+ method ac=direct itlim=10 onec
|
|
|
|
.MODEL M_PMOS_50 numos
|
|
+ output stat
|
|
+
|
|
+ x.mesh w=0.9 h.e=0.020 h.m=0.2 r=2.0
|
|
+ x.mesh w=0.2 h.e=0.005 h.m=0.02 r=2.0
|
|
+ x.mesh w=24.9 h.s=0.005 h.m=5 r=2.0
|
|
+ x.mesh w=24.9 h.e=0.005 h.m=5 r=2.0
|
|
+ x.mesh w=0.2 h.e=0.005 h.m=0.02 r=2.0
|
|
+ x.mesh w=0.9 h.s=0.020 h.m=0.2 r=2.0
|
|
+
|
|
+ y.mesh l=-.0200 n=1
|
|
+ y.mesh l=0.0 n=6
|
|
+ y.mesh w=0.15 h.s=0.0001 h.max=.02 r=2.0
|
|
+ y.mesh w=0.45 h.s=0.02 h.max=0.2 r=2.0
|
|
+ y.mesh w=1.40 h.s=0.20 h.max=0.4 r=2.0
|
|
+
|
|
+ region num=1 material=1 y.h=0.0
|
|
+ region num=2 material=2 y.l=0.0
|
|
+ interface dom=2 nei=1 x.l=1 x.h=51 layer.width=0.0
|
|
+ material num=1 oxide
|
|
+ material num=2 silicon
|
|
+
|
|
+ elec num=1 x.l=51.5 x.h=52.1 y.l=0.0 y.h=0.0
|
|
+ elec num=2 x.l=1 x.h=51 iy.l=1 iy.h=1
|
|
+ elec num=3 x.l=-0.1 x.h=0.5 y.l=0.0 y.h=0.0
|
|
+ elec num=4 x.l=-0.1 x.h=52.1 y.l=2.0 y.h=2.0
|
|
+
|
|
+ doping gauss n.type conc=1.0e17 x.l=-0.1 x.h=52.1 y.l=0.0
|
|
+ + char.l=0.30
|
|
+ doping unif n.type conc=5.0e15 x.l=-0.1 x.h=52.1 y.l=0.0 y.h=2.1
|
|
+ doping gauss p.type conc=4e17 x.l=-0.1 x.h=1 y.l=0.0 y.h=0.0
|
|
+ + char.l=0.16 lat.rotate ratio=0.65
|
|
+ doping gauss p.type conc=1e20 x.l=-0.1 x.h=0.95 y.l=0.0 y.h=0.08
|
|
+ + char.l=0.03 lat.rotate ratio=0.65
|
|
+ doping gauss p.type conc=4e17 x.l=51 x.h=52.1 y.l=0.0 y.h=0.0
|
|
+ + char.l=0.16 lat.rotate ratio=0.65
|
|
+ doping gauss p.type conc=1e20 x.l=51.05 x.h=52.1 y.l=0.0 y.h=0.08
|
|
+ + char.l=0.03 lat.rotate ratio=0.65
|
|
+
|
|
+ contact num=2 workf=5.29
|
|
+ models concmob surfmob transmob fieldmob srh auger conctau bgn
|
|
+ method ac=direct itlim=10 onec
|
|
|
|
**
|
|
* BSIM1 NMOS and PMOS 1.0 \um models.
|
|
* Gummel-Poon bipolar models.
|
|
**
|
|
.model M_NSIM_1 nmos level=4
|
|
+vfb= -1.1908
|
|
+phi= .8399
|
|
+k1= 1.5329
|
|
+k2= 193.7322m
|
|
+eta= 2m
|
|
+muz= 746.0
|
|
+u0= 90.0m
|
|
+x2mz= 10.1429
|
|
+x2e= -2.5m
|
|
+x3e= 0.2m
|
|
+x2u0= -10.0m
|
|
+mus= 975.0
|
|
+u1= .20
|
|
+x2ms= 0.0
|
|
+x2u1= 0.0
|
|
+x3ms= 10
|
|
+x3u1= 5.0m
|
|
+tox=2.00000e-02
|
|
+cgdo=2.0e-10
|
|
+cgso=2.0e-10
|
|
+cgbo=0.0
|
|
+temp= 27
|
|
+vdd= 7.0
|
|
+xpart
|
|
+n0= 1.5686
|
|
+nb= 94.6392m
|
|
+nd=0.00000e+00
|
|
+rsh=30.0 cj=7.000e-004 cjsw=4.20e-010
|
|
+js=1.00e-008 pb=0.700e000
|
|
+pbsw=0.8000e000 mj=0.5 mjsw=0.33
|
|
+wdf=0 dell=0.20u
|
|
|
|
.model M_PSIM_1 pmos level=4
|
|
+vfb= -1.3674
|
|
+phi= .8414
|
|
+k1= 1.5686
|
|
+k2= 203m
|
|
+eta= 2m
|
|
+muz= 340.0
|
|
+u0= 35.0m
|
|
+x2mz= 6.0
|
|
+x2e= 0.0
|
|
+x3e= -0.2m
|
|
+x2u0= -15.0m
|
|
+mus= 440.0
|
|
+u1= .38
|
|
+x2ms= 0.0
|
|
+x2u1= 0.0
|
|
+x3ms= -20
|
|
+x3u1= -10.0m
|
|
+tox=2.00000e-02
|
|
+cgdo=2.0e-10
|
|
+cgso=2.0e-10
|
|
+cgbo=0.0
|
|
+temp= 27
|
|
+vdd= 5.0
|
|
+xpart
|
|
+n0= 1.5686
|
|
+nb= 94.6392m
|
|
+nd=0.00000e+00
|
|
+rsh=80.0 cj=7.000e-004 cjsw=4.20e-010
|
|
+js=1.00e-008 pb=0.700e000
|
|
+pbsw=0.8000e000 mj=0.5 mjsw=0.33
|
|
+wdf=0 dell=0.17u
|
|
|
|
.model M_GNPN npn
|
|
+ is=1.3e-16
|
|
+ nf=1.00 bf=262.5 ikf=25mA vaf=20v
|
|
+ nr=1.00 br=97.5 ikr=0.5mA var=1.8v
|
|
+ rc=20.0
|
|
+ re=0.09
|
|
+ rb=15.0
|
|
+ ise=4.0e-16 ne=2.1
|
|
+ isc=7.2e-17 nc=2.0
|
|
+ tf=9.4ps itf=26uA xtf=0.5
|
|
+ tr=10ns
|
|
+ cje=89.44fF vje=0.95 mje=0.5
|
|
+ cjc=12.82fF vjc=0.73 mjc=0.49
|
|
|
|
.model M_GPNP pnp
|
|
+ is=5.8e-17
|
|
+ nf=1.001 bf=96.4 ikf=12mA vaf=29v
|
|
+ nr=1.0 br=17.3 ikr=0.2mA var=2.0v
|
|
+ rc=50.0
|
|
+ re=0.17
|
|
+ rb=20.0
|
|
+ ise=6.8e-17 ne=2.0
|
|
+ isc=9.0e-17 nc=2.1
|
|
+ tf=27.4ps itf=26uA xtf=0.5
|
|
+ tr=10ns
|
|
+ cje=55.36fF vje=0.95 mje=0.58
|
|
+ cjc=11.80fF vjc=0.72 mjc=0.46
|