72 lines
2.6 KiB
Plaintext
72 lines
2.6 KiB
Plaintext
**
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* Numerical models for a
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* polysilicon emitter complementary bipolar process.
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* The default device size is 1um by 10um (LxW)
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**
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.model M_NPN nbjt level=1
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+ title One-Dimensional Numerical Bipolar
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+ options base.depth=0.15 base.area=0.1 base.length=1.0 defa=10p
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+ x.mesh loc=-0.2 n=1
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+ x.mesh loc=0.0 n=51
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+ x.mesh wid=0.15 h.e=0.0001 h.m=.004 r=1.2
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+ x.mesh wid=1.15 h.s=0.0001 h.m=.004 r=1.2
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+ domain num=1 material=1 x.l=0.0
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+ domain num=2 material=2 x.h=0.0
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+ material num=1 silicon
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+ mobility mat=1 concmod=ct fieldmod=ct
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+ material num=2 polysilicon
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+ mobility mat=2 concmod=ct fieldmod=ct
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+ doping gauss n.type conc=3e20 x.l=-0.2 x.h=0.0 char.len=0.047
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+ doping gauss p.type conc=5e18 x.l=-0.2 x.h=0.0 char.len=0.100
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+ doping unif n.type conc=1e16 x.l=0.0 x.h=1.3
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+ doping gauss n.type conc=5e19 x.l=1.3 x.h=1.3 char.len=0.100
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+ models bgn srh auger conctau concmob fieldmob ^aval
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+ method devtol=1e-12 ac=direct itlim=15
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.model M_NPSUB numd level=1
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+ title One-Dimensional Numerical Collector-Substrate Diode
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+ options defa=10p
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+ x.mesh loc=1.3 n=1
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+ x.mesh loc=2.0 n=101
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+ domain num=1 material=1
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+ material num=1 silicon
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+ mobility mat=1 concmod=ct fieldmod=ct
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+ doping gauss n.type conc=5e19 x.l=1.3 x.h=1.3 char.len=0.100
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+ doping unif p.type conc=1e15 x.l=0.0 x.h=2.0
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+ models bgn srh auger conctau concmob fieldmob ^aval
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+ method devtol=1e-12 itlim=10
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.model M_PNP nbjt level=1
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+ title One-Dimensional Numerical Bipolar
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+ options base.depth=0.2 base.area=0.1 base.length=1.0 defa=10p
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+ x.mesh loc=-0.2 n=1
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+ x.mesh loc=0.0 n=51
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+ x.mesh wid=0.20 h.e=0.0001 h.m=.004 r=1.2
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+ x.mesh wid=1.10 h.s=0.0001 h.m=.004 r=1.2
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+ domain num=1 material=1 x.l=0.0
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+ domain num=2 material=2 x.h=0.0
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+ material num=1 silicon
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+ mobility mat=1 concmod=ct fieldmod=ct
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+ material num=2 polysilicon
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+ mobility mat=2 concmod=ct fieldmod=ct
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+ doping gauss p.type conc=3e20 x.l=-0.2 x.h=0.0 char.len=0.047
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+ doping gauss n.type conc=5e17 x.l=-0.2 x.h=0.0 char.len=0.200
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+ doping unif p.type conc=1e16 x.l=0.0 x.h=1.3
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+ doping gauss p.type conc=5e19 x.l=1.3 x.h=1.3 char.len=0.100
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+ models bgn srh auger conctau concmob fieldmob ^aval
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+ method devtol=1e-12 ac=direct itlim=15
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.model M_PNSUB numd level=1
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+ title One-Dimensional Numerical Collector-Substrate Diode
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+ options defa=10p
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+ x.mesh loc=1.3 n=1
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+ x.mesh loc=2.0 n=101
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+ domain num=1 material=1
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+ material num=1 silicon
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+ mobility mat=1 concmod=ct fieldmod=ct
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+ doping gauss p.type conc=5e19 x.l=1.3 x.h=1.3 char.len=0.100
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+ doping unif n.type conc=1e15 x.l=0.0 x.h=2.0
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+ models bgn srh auger conctau concmob fieldmob ^aval
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+ method devtol=1e-12 itlim=10
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